CN101079420B - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
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- CN101079420B CN101079420B CN2007101042798A CN200710104279A CN101079420B CN 101079420 B CN101079420 B CN 101079420B CN 2007101042798 A CN2007101042798 A CN 2007101042798A CN 200710104279 A CN200710104279 A CN 200710104279A CN 101079420 B CN101079420 B CN 101079420B
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- fuse
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- fuse element
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-145759 | 2006-05-25 | ||
JP2006145759 | 2006-05-25 | ||
JP2006145759A JP4884077B2 (ja) | 2006-05-25 | 2006-05-25 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010105271035A Division CN102074272A (zh) | 2006-05-25 | 2007-05-25 | 半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101079420A CN101079420A (zh) | 2007-11-28 |
CN101079420B true CN101079420B (zh) | 2010-12-22 |
Family
ID=38789931
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101042798A Active CN101079420B (zh) | 2006-05-25 | 2007-05-25 | 半导体器件 |
CN2010105271035A Pending CN102074272A (zh) | 2006-05-25 | 2007-05-25 | 半导体器件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010105271035A Pending CN102074272A (zh) | 2006-05-25 | 2007-05-25 | 半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7706202B2 (zh) |
JP (1) | JP4884077B2 (zh) |
KR (1) | KR101316280B1 (zh) |
CN (2) | CN101079420B (zh) |
TW (1) | TWI487090B (zh) |
Families Citing this family (59)
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KR100967037B1 (ko) * | 2007-10-17 | 2010-06-29 | 주식회사 하이닉스반도체 | 퓨즈 박스 및 그 형성 방법 |
JP2009141266A (ja) * | 2007-12-10 | 2009-06-25 | Nec Electronics Corp | 半導体装置 |
US8077531B2 (en) * | 2008-01-16 | 2011-12-13 | Hynix Semiconductor Inc. | Semiconductor integrated circuit including column redundancy fuse block |
US8599630B2 (en) * | 2008-01-16 | 2013-12-03 | SK Hynix Inc. | Semiconductor integrated circuit including column redundancy fuse block |
JP5519120B2 (ja) * | 2008-05-27 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20090295461A1 (en) * | 2008-05-30 | 2009-12-03 | Cesare Joshua De | Device configuration |
US8411482B2 (en) * | 2008-08-20 | 2013-04-02 | Intel Corporation | Programmable read only memory |
US7816945B2 (en) * | 2009-01-22 | 2010-10-19 | International Business Machines Corporation | 3D chip-stack with fuse-type through silicon via |
JP2010192647A (ja) * | 2009-02-18 | 2010-09-02 | Renesas Electronics Corp | 半導体装置、及び半導体装置の製造方法 |
KR101016825B1 (ko) * | 2009-02-24 | 2011-02-21 | 삼성에스디아이 주식회사 | 배터리 팩 및 과방전 보호 방법 |
JP5510862B2 (ja) * | 2009-03-10 | 2014-06-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5299014B2 (ja) * | 2009-03-25 | 2013-09-25 | 富士通セミコンダクター株式会社 | 電気フューズ切断制御回路および半導体装置 |
KR20120037371A (ko) * | 2009-06-15 | 2012-04-19 | 소니 주식회사 | 반도체 디바이스 |
KR101110793B1 (ko) * | 2009-07-01 | 2012-03-13 | 주식회사 하이닉스반도체 | 반도체 장치 |
KR101608739B1 (ko) * | 2009-07-14 | 2016-04-21 | 삼성전자주식회사 | 리던던시 회로, 이를 포함하는 반도체 메모리 장치 및 반도체 메모리 장치의 리페어 방법 |
JP2011060359A (ja) * | 2009-09-08 | 2011-03-24 | Elpida Memory Inc | 半導体装置 |
JP2011100989A (ja) | 2009-10-09 | 2011-05-19 | Renesas Electronics Corp | 半導体装置 |
JP5561668B2 (ja) | 2009-11-16 | 2014-07-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5537137B2 (ja) * | 2009-12-10 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
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CN102468833B (zh) * | 2010-11-19 | 2015-01-28 | 瑞昱半导体股份有限公司 | 电子熔丝系统 |
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JP2012216590A (ja) * | 2011-03-31 | 2012-11-08 | Elpida Memory Inc | 半導体装置 |
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JP6211867B2 (ja) * | 2013-09-24 | 2017-10-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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CN103760392B (zh) * | 2014-01-22 | 2016-05-25 | 西安电子科技大学 | 用于dc-dc转换器的调节修正信号产生电路 |
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KR102204597B1 (ko) * | 2014-11-19 | 2021-01-19 | 삼성전자주식회사 | 반도체 장치 |
KR20160083408A (ko) | 2014-12-31 | 2016-07-12 | 삼성전자주식회사 | 퓨즈 패키지 및 이를 이용한 발광소자 모듈 |
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- 2007-05-25 KR KR1020070050965A patent/KR101316280B1/ko active IP Right Grant
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JP2007317882A (ja) | 2007-12-06 |
CN102074272A (zh) | 2011-05-25 |
US20070280012A1 (en) | 2007-12-06 |
CN101079420A (zh) | 2007-11-28 |
TW200807686A (en) | 2008-02-01 |
KR20070114046A (ko) | 2007-11-29 |
US8331185B2 (en) | 2012-12-11 |
US20100165775A1 (en) | 2010-07-01 |
TWI487090B (zh) | 2015-06-01 |
JP4884077B2 (ja) | 2012-02-22 |
KR101316280B1 (ko) | 2013-10-08 |
US7706202B2 (en) | 2010-04-27 |
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