CN100500950C - 纳米结构及其制造方法 - Google Patents

纳米结构及其制造方法 Download PDF

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Publication number
CN100500950C
CN100500950C CNB038212854A CN03821285A CN100500950C CN 100500950 C CN100500950 C CN 100500950C CN B038212854 A CNB038212854 A CN B038212854A CN 03821285 A CN03821285 A CN 03821285A CN 100500950 C CN100500950 C CN 100500950C
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nanowhiskers
semiconductor
length
nanowhisker
substrate
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Chinese (zh)
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CN1681975A (zh
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拉尔斯·伊瓦尔·塞缪尔森
约纳斯·比约恩·奥尔松
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QuNano AB
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BTG International Ltd
STARTSKOTTET 22286 AB
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    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
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  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Bipolar Transistors (AREA)
  • Inorganic Fibers (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Photovoltaic Devices (AREA)
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  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electromechanical Clocks (AREA)
  • Recrystallisation Techniques (AREA)
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CNB038212854A 2002-07-08 2003-07-08 纳米结构及其制造方法 Expired - Fee Related CN100500950C (zh)

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US39383502P 2002-07-08 2002-07-08
US60/393,835 2002-07-08
US45998203P 2003-04-04 2003-04-04
US60/459,982 2003-04-04

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CN100500950C true CN100500950C (zh) 2009-06-17

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EP (2) EP1525339B1 (cg-RX-API-DMAC7.html)
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Cited By (2)

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CN104508190A (zh) * 2012-05-25 2015-04-08 索尔伏打电流公司 同心流反应器
CN105050941A (zh) * 2013-03-14 2015-11-11 罗伯特·博世有限公司 用于微机械元件的加工方法和相应的微机械元件

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EP1314189B1 (en) * 2000-08-22 2013-02-27 President and Fellows of Harvard College Electrical device comprising doped semiconductor nanowires and method for its production
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
WO2002048701A2 (en) 2000-12-11 2002-06-20 President And Fellows Of Harvard College Nanosensors
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
KR101064318B1 (ko) * 2003-04-04 2011-09-14 큐나노에이비 Ｐｎ 접합을 갖는 나노위스커 및 이의 가공 방법
WO2005006346A2 (en) * 2003-07-08 2005-01-20 Qunano Ab Probe structures incorporating nanowhiskers, production methods thereof, and methods of forming nanowhiskers
US6989325B2 (en) * 2003-09-03 2006-01-24 Industrial Technology Research Institute Self-assembled nanometer conductive bumps and method for fabricating
EP1678741A1 (en) * 2003-09-12 2006-07-12 Kobenhavns Universitet Method of fabrication and device comprising elongated nanosize elements
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7662706B2 (en) 2003-11-26 2010-02-16 Qunano Ab Nanostructures formed of branched nanowhiskers and methods of producing the same
US7208094B2 (en) * 2003-12-17 2007-04-24 Hewlett-Packard Development Company, L.P. Methods of bridging lateral nanowires and device using same
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