CN109103271B - 一种基于纳米碳材料/硅异质结的x射线探测器及其制备方法 - Google Patents
一种基于纳米碳材料/硅异质结的x射线探测器及其制备方法 Download PDFInfo
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Abstract
本发明的纳米碳材料/硅异质结X射线探测器，使用纳米碳材料与硅构成异质结，同时纳米碳材料作为X射线的透明窗口层和器件的上电极。其中，纳米碳材料为原子序数为6的碳元素构成。在同等厚度下，该材料对X射线的透过率相对于传统的金材料(原子序数79)大幅提高。以针对1keV光子能量的X射线为例，250nm的纳米碳材料的射线透过率达95％，而250nm的金材料的射线透过率小于5％。即在同样的辐照条件下，本发明所述探测器可用于使硅中电子空穴电离、并产生电信号的有效X射线光子数目将远大于传统的金硅面垒探测器，从而可以大幅提高探测器的响应率。
Description
技术领域
本发明涉及一种X射线探测器，特别涉及一种基于纳米碳材料/硅异质结的X射线探测器及其制备方法，属于纳米碳材料应用技术领域，本发明所述的探测器可用于高能物理、天体物理、工业、安全检测、核医学、X光成像、军事等领域的X射线探测。
背景技术
X射线是波长介于紫外线和γ射线之间的电磁波，其波长很短，介于0.01～100埃之间。X射线具有很高的穿透本领，能透过许多对可见光不透明的物质，其在高能物理、天体物理、工业、安全检测、核医学、X光成像、军事等各个领域具有重要应用。
X射线探测器是将X射线转换为电信号的装置。它接收到射线照射，然后产生与辐射强度相关的电信号，是X射线在各个领域应用的基础。因此，探测器的响应率就十分重要。X射线探测器主要包含气体探测器、闪烁体探测器、半导体探测器等类型，其中半导体探测器具有能量分辨率高、性能稳定、探测效率高、体积小、抗磁性好、光电转换效率高以及价格便宜等优点，已被广泛应用。但是，目前的半导体探测器也存在一些问题，例如，高纯锗探测器由于锗材料的带隙较小，为了抑制暗电流，往往需要对探测器进行制冷；金硅面垒探测器的窗口层使用金，而金作为重金属(原子序数79)，对X射线的透过性差。例如250nm的金对1keV光子能量的X射线透过率小于5％，这就严重影响了探测器的探测效率；硅PIN探测器在制备过程中需要使用热扩散等技术，并且器件的死层较厚，因此对于较低能量的X射线探测的灵敏度较差。
发明内容
本发明的技术解决问题是：克服现有技术的不足，提出一种基于纳米碳材料/硅异质结的X射线探测器及其制备方法，探测器以纳米碳材料作为窗口层和上电极层，与硅构成异质结，探测器中的纳米碳材料层具有对X射线透过率高、对可见光完全阻碍的特点，因此该器件对X射线波段具有良好的响应，同时有效屏蔽了可见光波段的干扰。探测器结构、制备工艺简单。
本发明的技术解决方案是：
一种基于纳米碳材料/硅异质结的X射线探测器，自上而下依次包括纳米碳材料层(1)，硅片(2)和下电极层(3)，如附图1所示。本发明所述探测器中的纳米碳材料层对X射线具有良好的透过性，X射线光子可以穿透纳米碳材料层并被硅片衬底吸收，使硅中的空穴电子有效电离，空穴电子分别被纳米碳材料和下电极收集，从而产生电信号。
上述技术方案中，纳米碳材料与硅构成异质结，产生内建电场；纳米碳材料同时作为X射线的透明窗口层和器件的上电极层，硅片作为纳米碳材料的衬底。
上述技术方案中，所使用的纳米碳材料为碳纳米管薄膜或石墨烯薄膜。
上述技术方案中，所使用的碳纳米管薄膜或石墨烯薄膜的厚度为250nm～10μm。
上述技术方案中，所用的碳纳米管薄膜或石墨烯薄膜同时作为X射线的窗口层和可见光的屏蔽层。
上述技术方案中，所使用的碳纳米管薄膜为单壁碳纳米管薄膜、双壁碳纳米管薄膜或多壁碳纳米管薄膜；所使用的石墨烯薄膜为多层石墨烯薄膜。
上述技术方案中，所使用的硅片的导电类型为N型。
上述技术方案中，通过Ti/Au或铟镓合金作为器件的下电极，与纳米碳材料构成的上电极一起组成器件的两极。
纳米碳材料层与硅片构成异质结，纳米碳材料层同时作为X射线的透明窗口层和器件的上电极，硅片作为纳米碳材料的衬底。
所用的纳米碳材料层作为X射线的窗口层和可见光的屏蔽层。
以硅片作为纳米碳材料层的衬底。
所使用的硅片为N型硅片。
以Ti/Au或铟镓合金作为器件的下电极。
一种基于碳纳米管/硅异质结的X射线探测器的制备方法，该方法包括如下步骤：
1)采用化学气相沉积法制备碳纳米管薄膜，通过纯化、铺展，获得厚度为250nm～10μm的碳纳米管薄膜；
2)将步骤1)得到的碳纳米管薄膜转移到N型硅片的一侧表面，并在自然状态或红外烤灯或氮气下干燥；
3)在硅片的另一侧蒸镀Ti/Au金属电极或铟镓合金电极，从而获得碳纳米管/硅异质结X射线探测器。
一种基于石墨烯/硅异质结的X射线探测器的制备方法，该方法包括如下步骤：
1)采用化学气相沉积法在镍箔基底上制备石墨烯薄膜，通过对镍箔的腐蚀，获得漂浮在水面上的石墨烯薄膜，并对石墨烯薄膜进行漂洗。获得厚度为250nm～10μm的石墨烯薄膜；
2)将石墨烯薄膜转移到N型硅片的一侧表面，并在自然状态或红外烤灯或氮气下干燥；
3)在硅片的另一侧蒸镀Ti/Au金属电极或铟镓合金电极，从而获得石墨烯/硅异质结X射线探测器。
有益效果
(1)本发明的纳米碳材料/硅异质结X射线探测器，使用纳米碳材料与硅构成异质结，同时纳米碳材料作为X射线的透明窗口层和器件的上电极。其中，纳米碳材料为原子序数为6的碳元素构成。在同等厚度下，该材料对X射线的透过率相对于传统的金材料(原子序数79)大幅提高。以针对1keV光子能量的X射线为例，250nm的纳米碳材料的射线透过率达95％，而250nm的金材料的射线透过率小于5％。即在同样的辐照条件下，本发明所述探测器可用于使硅中电子空穴电离、并产生电信号的有效X射线光子数目将远大于传统的金硅面垒探测器，从而可以大幅提高探测器的响应率。
(2)纳米碳材料/硅异质结X射线探测器中纳米碳材料层对X射线优异的透过率，在钨靶的X射线管产生的X射线辐照下，在X射线的强度为6.5mGyair/s时，碳纳米管/硅异质结X射线探测器在零偏压下的短路电流密度为3.85μA/cm2(见实施例1)，而作为对照样品的金硅面垒探测器的短路电流密度仅为2.5μA/cm2，本发明所述探测器的响应较对照样品提升幅度达54％。
(3)本发明所使用的纳米碳材料层在保证高的X射线透过率的同时，有效阻止了可见光的透过，从而屏蔽的可见光对器件响应的干扰。
(4)本发明所述的纳米碳材料/硅异质结X射线探测器，器件结构简单，加工过程中不需要高温扩散等工艺，加工成本低廉，体积小巧，便于在高能物理、天体物理、工业、安全检测等领域展开应用。
(5)本发明设计一种基于纳米碳材料/硅异质结的X射线探测器，属于纳米碳材料应用领域。所述的X射线探测器自上而下依次包括纳米碳材料层(1)，硅片(2)，下电极层(3)。其中，纳米碳材料层因其完全由原子序数仅为6的碳元素构成，其对X射线具有良好的透过性；进一步，穿透纳米碳材料层的X射线被硅吸收并使硅中的空穴电子电离，硅中产生的空穴电子分别被纳米碳材料和下电极收集，从而产生电信号。该探测器具有纳米碳材料层对X射线透过性高，器件对X射线响应好、器件结构简单的优点。
附图说明
图1为基于纳米碳材料/硅异质结X射线探测器的结构示意图。自上而下依次包括纳米碳材料层(1)，硅片(2)，下电极层(3)。
图2为实施例1中，以碳纳米管薄膜为探测器中的纳米碳材料层时，碳纳米管薄膜的扫描电镜照片。
图3为实施例1中，以碳纳米管薄膜为探测器中的纳米碳材料层时，器件在6.5mGyair/s的X射线辐照下，器件的电流-电压特性曲线。
图4为实施例1中，以碳纳米管薄膜为探测器中的纳米碳材料层时，器件在不同的X射线的辐照下，器件的短路电流密度-辐照强度的关系曲线；并将其与对照样品(金硅面垒探测器)的短路电流密度-辐照强度关系曲线进行比较。
图5为实施例2中，以石墨烯薄膜为探测器中的纳米碳材料层时，石墨烯薄膜的扫描电镜照片。
图6为实施例2中，以石墨烯薄膜为探测器中的纳米碳材料层时，器件在4mGyair/s的X射线的辐照下，器件的电流-电压特性曲线。
具体实施方式
下面结合附图和实施例对本发明做进一步描述。
实施例1
(1)采用化学气相沉积法制备单壁碳纳米管。通过纯化、铺展，获得厚度为250nm的薄膜；
(2)将单壁碳纳米管薄膜转移到N型硅片的一侧表面，并在自然状态下干燥；
(3)在硅片的另一侧蒸镀50nm的Ti/Au金属电极，从而获得碳纳米管/硅异质结X射线探测器，其结构如图1所示。图2所示是探测器中碳纳米管薄膜的扫描电镜照片；
(4)将该探测器在6.5mGyair/s的X射线的辐照下，器件的电流-电压特性曲线如图3所示，其短路电流密度达3.85μA/cm2，而作为对照样品的金硅面垒探测器的短路电流密度仅为2.5μA/cm2，本发明器件的响应较对照样品提升幅度达54％；
(5)对该探测在不同剂量率下进行测试，结果如图4所示：器件响应的线性度很好，且响应的短路电流密度远高于对照样品。
实施例2
(1)采用化学气相沉积法在镍箔上制备石墨烯。通过氯化铁溶液腐蚀镍基底，获得厚度为1μm的石墨烯薄膜；
(2)将石墨烯薄膜转移到N型硅片的一侧表面，并在红外烤灯照射下干燥；
(3)在硅片的另一侧涂覆铟镓合金作为下电极，从而获得石墨烯/硅异质结X射线探测器。图5所示是探测器中石墨烯薄膜的扫描电镜照片。
(4)将该探测器在4mGyair/s的X射线下辐照，器件的电流-电压特性曲线如图6所示，其短路电流密度达2.16μA/cm2，高于同样测试条件下对照样品金硅面垒探测器的短路电流密度(仅为1.57μA/cm2)，本发明的器件的响应较对照样品提升幅度达37.5％。
实施例3
(1)采用化学气相沉积法制备多壁碳纳米管。通过纯化、铺展，获得厚度为10μm的薄膜；
(2)将多壁碳纳米管薄膜转移到N型硅片的一侧表面，并在通过氮气吹干；
(3)在硅片的另一侧涂覆100nm的铟镓合金作为下电极，从而获得碳纳米管/硅异质结X射线探测器。
(4)将该探测器在2mGyair/s的X射线的辐照下，器件的电流-电压特性曲线显示其短路电流密度达1.15μA/cm2，而作为对照样品的金硅面垒探测器的短路电流密度仅为0.79μA/cm2，本发明的器件的响应较对照样品提升幅度达45.6％。
Claims (1)
1.一种基于纳米碳材料/硅异质结的X射线探测器，其特征在于：该探测器包括纳米碳材料层(1)、硅片(2)和下电极层(3)；硅片(2)的上面为纳米碳材料层(1)，硅片(2)的下面为下电极层(3)；
所述的纳米碳材料层(1)的厚度为250nm～10μm；
所述的纳米碳材料层(1)为碳纳米管薄膜或石墨烯薄膜，碳纳米管薄膜为单壁碳纳米管薄膜、双壁碳纳米管薄膜或多壁碳纳米管薄膜，石墨烯薄膜为多层石墨烯薄膜；
所述的硅片(2)的导电类型为N型；
所述的下电极层(3)的材料为Ti/Au合金或铟镓合金；
该X射线探测器的制备方法，纳米碳材料层(1)为碳纳米管薄膜时，包括如下步骤：
(1)采用化学气相沉积法制备碳纳米管薄膜，通过纯化、铺展，获得厚度为250nm-10μm的碳纳米管薄膜；
(2)将步骤(1)得到的碳纳米管薄膜转移到N型硅片的一侧表面，并在自然状态或红外烤灯或氮气下干燥；
(3)在硅片的另一侧蒸镀Ti/Au金属电极或铟镓合金电极，获得碳纳米管/硅异质结X射线探测器；
该X射线探测器的制备方法，纳米碳材料层(1)为石墨烯薄膜时，包括如下步骤：
(1)采用化学气相沉积法在镍箔基底上制备石墨烯薄膜，通过对镍箔的腐蚀，获得漂浮在水面上的石墨烯薄膜，并对石墨烯薄膜进行漂洗，获得厚度为250nm～10μm的石墨烯薄膜；
(2)将石墨烯薄膜转移到N型硅片的一侧表面，并在自然状态或红外烤灯或氮气下干燥；
(3)在硅片的另一侧蒸镀Ti/Au金属电极或铟镓合金电极，获得石墨烯/硅异质结X射线探测器。
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