CN106653952B - 一种硅的中红外抗反射微结构的制备方法 - Google Patents
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Abstract
本发明提供了一种硅的中红外抗反射微结构的制备方法，包括以下步骤：首先通过绘图软件设计所需的刻蚀图案，然后在清洗过后的硅表面均匀涂覆一层紫外光刻胶，经过紫外曝光，通过显影液显影将绘图软件设计出来的图案转移到覆有光刻胶的硅片上，此时通过电子束蒸发的方法在此硅片上蒸镀一层金的薄膜，基于湿法刻蚀的原理，通过调节刻蚀时间和刻蚀液体的组份进行刻蚀深度的控制，得到高度可控的高深宽比的硅微米阵列结构。本发明所述的制备方法具有成本低，加工方便，刻蚀深度大且可控等优点，在硅的中红外抗反射领域具有广泛的应用前景。
Description
技术领域
本发明属于硅的微纳加工领域，具体涉及一种硅的中红外抗反射微结构的制备方法。
背景技术
近年来，伴随着硅基光电子技术领域的不断发展，硅基光电子应用的波长范围逐渐从传统的通信波段范围扩展到中红外波段和远红外波段。根据红外辐射在大气层中的传输条件，红外光谱通常分为远红外(NIR)、中红外(MIR)和远红外(FIR)。其中，中红外光谱(2.5um-25um)由于谱带灵敏性高、基频振动强的特点，被广泛应用于环境监测、遥感技术等传感应用中。
微纳加工技术是一门由微电子技术、传统机械加工、非传统加工技术或特种加工技术衍生而来的一种技术，利用微纳加工这一技术可以加工出适用于中红外波段的不同尺度的微结构。湿法刻蚀是微纳加工技术刻蚀中一种简单高效的刻蚀技术，其一般步骤是将设计好的硅片沉浸于某种特制的化学溶剂中，该溶剂与特定的金属覆盖区域发生反应，其反应速率比较快。而在现有的微纳加工中，通过反应离子深硅刻蚀也可以有较快的反应速率，但是高昂的设备和成本不利于大面积的制备。
发明内容
本发明的目的在于结合微纳加工和湿法刻蚀技术，提供一种硅的中红外抗反射微结构的制备方法，该方法制备效率高、成本低廉，且易于大面积结构制备。
为实现上述目的，本发明采用的技术方案如下：
一种硅的中红外抗反射微结构的制备方法，包括以下步骤：
(1)首先在清洗过的、干净的硅片上滴上紫外光刻胶的液滴，然后将硅片固定在匀胶机的转台上，通过一定的速率匀胶50秒以上；
(2)将匀胶过后的硅片放置在热台上进行蒸发，采取的温度是115摄氏度，加热时间为60s，这样使溶剂充分挥发得到一层均匀覆盖在硅片表面的紫外光刻胶的膜；
(3)再通过无掩膜光刻机，将所绘制的微米级微结构图案进行曝光，曝光过程中要求曝光时间和显影时间进行配合，使曝光后的图案清晰完整；
(4)将曝光显影后的硅片在反应离子刻蚀机器中进行残胶的去除；
(5)通过电子束蒸发设备在步骤(4)所制得的硅片上蒸镀一定厚度的金；
(6)将镀过金的硅片放置在配好的腐蚀液中进行刻蚀反应，该腐蚀液由氢氟酸、双氧水和水三部分组成；
(7)经过一定时间后将腐蚀好的硅片取出，再通过金腐蚀液去残留的金层，并在丙酮中超声去除残胶，最后通过去离子水清洗以及氮气枪吹干，即制得微结构。
优选地，所述步骤(3)中，微米级微结构图案的特征尺寸为2-20um。曝光时间为3～8秒，显影时间为12～15秒。
优选地，所述步骤(5)中，金的厚度为8-12nm。
优选地，所述步骤(6)中，氢氟酸、双氧水和水的体积比为1:3:2。
本发明基于湿法刻蚀的原理，通过调节刻蚀时间和刻蚀液体的组份进行刻蚀深度的控制，可以得到高度可控的高深宽比的硅微米阵列结构。相比现有的反应离子刻蚀的复杂工艺以及高昂的设备成本，本发明的制备方法具有成本低、加工方便、刻蚀深度大且可控等优点，可以制作出面积可控、深度可控的中红外波段的抗反射微结构，尤其适用于微米尺度硅的深刻蚀，非常高效便利，并在垂直方向的粗糙度上取得了非常不错的改进效果。这种方便灵活的微结构制备方法在硅的中红外器件探测领域有着广泛的应用前景。
附图说明
图1是本发明实施例中5微米深度的中红外抗反射微米柱的结构示意图。
图2是本发明实施例中制备的大面积中红外抗反射微米柱的示意图。
具体实施方式
下面将结合附图详细说明本发明的中红外硅的抗反射微结构制备方法。
本实施例涉及一种中红外抗反射微米柱阵列的制备方法，具体步骤如下：
(1)首先，取一个1cmx1cm的100型硅片，将该硅片首先用适量的40％氢氟酸进行表面清洗，然后放在丙酮溶液中进行超声，最后用去离子水清洗，接着用氮气枪吹干即可。
(2)将清洗过的硅片进行匀胶处理，此处的光刻胶为SU8光刻胶，将硅片固定在旋转匀胶机上，此处匀胶机以4000转/分的速率匀胶50秒以上。
(3)将匀胶过的硅片放置在热台上进行加热，保持115摄氏度，60秒钟的加热时间。此处通过膜厚仪测得最终匀胶以后的胶的厚度为0.6um。
(4)将绘图软件设计的所需要深刻的微结构图案拷贝到SF-100型无掩膜光刻机上，通过曝光8秒钟，显影12秒钟的参数配合将图案转移到光刻胶上；本实施例中的微结构图案采取的为直径10um，周期为20um的圆柱阵列。
(5)在图案转移的过程中，为避免去胶过程中的残胶的影响，需要进行二次去残胶的过程，这里的残胶就是指阻碍金膜和硅片接触的残胶。本实施中所用除此残胶的方法是利用ICP-RIE设备中的氧气进行残胶去除，事实证明，此种干法刻蚀去残胶的方法非常高效。
(6)将所获得的硅片进行电子束蒸镀，此时镀的是一层10nm厚度的金层，此时图案转移过程中所需要的准备工作已经完成。
(7)本发明的一个关键技术难度在于：催化金属层金膜的厚度以及腐蚀液各组分的匹配问题。根据所镀的10nm厚度的金层，腐蚀液采用的配方是由氢氟酸、双氧水和水三部分组成，本实施例采用的是上海国药集团生产的40％的氢氟酸和30％的双氧水，具体配方是5毫升的氢氟酸、15毫升的双氧水和10毫升的水，放置在50毫升的塑料烧杯里，搅拌均匀备用。
(8)用聚四氟乙烯镊子将步骤(6)加工好的硅片，放置在配备好的腐蚀液中腐蚀即可，最后将腐蚀好的片子取出，通过金腐蚀液去残留的金层以及在丙酮中超声去除残胶，最后通过去离子水清洗，氮气枪吹干即可。最后实测每分钟硅的腐蚀深度约1um。
通过图1制备的微结构可以看出，在垂直方向的粗糙度上，相比于反应离子刻蚀的方法，本发明具有改善粗糙度的优势。如图2所示，本发明可以制备大面积深度可控的阵列。
Claims (5)
1.一种硅的中红外抗反射微结构的制备方法，其特征在于，包括以下步骤：
(1)首先在清洗过的、干净的硅片上滴上紫外光刻胶的液滴，然后将硅片固定在匀胶机的转台上，通过一定的速率匀胶50秒以上；
(2)将匀胶过后的硅片放置在热台上进行蒸发，采取的温度是115摄氏度，加热时间为60s，这样使溶剂充分挥发得到一层均匀覆盖在硅片表面的紫外光刻胶的膜；
(3)再通过无掩膜光刻机，将所绘制的微米级微结构图案进行曝光，曝光过程中要求曝光时间和显影时间进行配合，使曝光后的图案清晰完整；
(4)将曝光显影后的硅片在反应离子刻蚀机器中进行残胶的去除；
(5)通过电子束蒸发设备在步骤(4)所制得的硅片上蒸镀厚度为8-12nm的金；
(6)将镀过金的硅片放置在配好的腐蚀液中进行刻蚀反应，该腐蚀液由氢氟酸、双氧水和水三部分组成，氢氟酸、双氧水和水的体积比为1:3:2；腐蚀液刻蚀硅片的速率为1um/分；
(7)经过一定时间后将腐蚀好的硅片取出，再通过金腐蚀液去残留的金层，并在丙酮中超声去除残胶，最后通过去离子水清洗以及氮气枪吹干，即制得微结构。
2.根据权利要求1所述的一种硅的中红外抗反射微结构的制备方法，其特征在于，所述步骤(1)中，紫外光刻胶采用SU8。
3.根据权利要求1所述的一种硅的中红外抗反射微结构的制备方法，其特征在于，所述步骤(1)中，匀胶的速率为4000转/分。
4.根据权利要求1所述的一种硅的中红外抗反射微结构的制备方法，其特征在于，所述步骤(3)中，微米级微结构图案的特征尺寸为2-20um。
5.根据权利要求1所述的一种硅的中红外抗反射微结构的制备方法，其特征在于，所述步骤(3)中，曝光时间为3～8秒，显影时间为12～15秒。
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