CN100495213C - 光刻装置及器件制造方法 - Google Patents
光刻装置及器件制造方法 Download PDFInfo
- Publication number
- CN100495213C CN100495213C CNB2004100748555A CN200410074855A CN100495213C CN 100495213 C CN100495213 C CN 100495213C CN B2004100748555 A CNB2004100748555 A CN B2004100748555A CN 200410074855 A CN200410074855 A CN 200410074855A CN 100495213 C CN100495213 C CN 100495213C
- Authority
- CN
- China
- Prior art keywords
- liquid
- immersion liquid
- substrate
- projection system
- final element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- 238000000206 photolithography Methods 0.000 title 1
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- 238000007654 immersion Methods 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 72
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- 238000000059 patterning Methods 0.000 claims description 25
- 239000005350 fused silica glass Substances 0.000 claims 5
- 239000011241 protective layer Substances 0.000 claims 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 88
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- 238000007789 sealing Methods 0.000 description 14
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 12
- 229910004261 CaF 2 Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
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- 235000012239 silicon dioxide Nutrition 0.000 description 8
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
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- 230000002411 adverse Effects 0.000 description 3
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- YFCGDEUVHLPRCZ-UHFFFAOYSA-N [dimethyl(trimethylsilyloxy)silyl]oxy-dimethyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C YFCGDEUVHLPRCZ-UHFFFAOYSA-N 0.000 description 2
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- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000662429 Fenerbahce Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- -1 butyl esters Chemical class 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical group [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/162—Protective or antiabrasion layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Optical Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03255377.8 | 2003-08-29 | ||
| EP03255377 | 2003-08-29 | ||
| US10/698,012 US6954256B2 (en) | 2003-08-29 | 2003-10-31 | Gradient immersion lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1591197A CN1591197A (zh) | 2005-03-09 |
| CN100495213C true CN100495213C (zh) | 2009-06-03 |
Family
ID=34424773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100748555A Expired - Lifetime CN100495213C (zh) | 2003-08-29 | 2004-08-30 | 光刻装置及器件制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6954256B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1510871B1 (cg-RX-API-DMAC7.html) |
| JP (3) | JP2005079589A (cg-RX-API-DMAC7.html) |
| CN (1) | CN100495213C (cg-RX-API-DMAC7.html) |
| SG (1) | SG109610A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (248)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004019128A2 (en) * | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
| US7081278B2 (en) * | 2002-09-25 | 2006-07-25 | Asml Holdings N.V. | Method for protection of adhesives used to secure optics from ultra-violet light |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) * | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| CN101424883B (zh) * | 2002-12-10 | 2013-05-15 | 株式会社尼康 | 曝光设备和器件制造法 |
| KR101036114B1 (ko) * | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| SG171468A1 (en) * | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
| US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| WO2004053959A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 光学素子及びその光学素子を用いた投影露光装置 |
| CN1316482C (zh) | 2002-12-19 | 2007-05-16 | 皇家飞利浦电子股份有限公司 | 照射层上斑点的方法和装置 |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| TWI591445B (zh) * | 2003-02-26 | 2017-07-11 | 尼康股份有限公司 | Exposure apparatus, exposure method, and device manufacturing method |
| EP1610361B1 (en) | 2003-03-25 | 2014-05-21 | Nikon Corporation | Exposure system and device production method |
| EP1612850B1 (en) * | 2003-04-07 | 2009-03-25 | Nikon Corporation | Exposure apparatus and method for manufacturing a device |
| KR20110104084A (ko) * | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
| WO2004090633A2 (en) * | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
| EP2950148B1 (en) * | 2003-04-10 | 2016-09-21 | Nikon Corporation | Environmental system including vaccum scavenge for an immersion lithography apparatus |
| CN101813892B (zh) | 2003-04-10 | 2013-09-25 | 株式会社尼康 | 沉浸式光刻装置及使用光刻工艺制造微器件的方法 |
| CN1771463A (zh) * | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
| EP2618213B1 (en) | 2003-04-11 | 2016-03-09 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
| KR101525335B1 (ko) * | 2003-04-11 | 2015-06-03 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| JP2006523958A (ja) * | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
| US7348575B2 (en) | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| EP1630585A4 (en) | 2003-05-06 | 2010-07-14 | Nikon Corp | OPTICAL PROJECTION SYSTEM AND EXPOSURE DEVICE AND EXPOSURE METHOD |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1624481A4 (en) * | 2003-05-15 | 2008-01-30 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
| TWI421906B (zh) | 2003-05-23 | 2014-01-01 | 尼康股份有限公司 | An exposure method, an exposure apparatus, and an element manufacturing method |
| TWI424470B (zh) * | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| KR101728664B1 (ko) * | 2003-05-28 | 2017-05-02 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
| TWI442694B (zh) * | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4415939B2 (ja) * | 2003-06-13 | 2010-02-17 | 株式会社ニコン | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
| TWI564933B (zh) | 2003-06-19 | 2017-01-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
| KR20060027832A (ko) * | 2003-07-01 | 2006-03-28 | 가부시키가이샤 니콘 | 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법 |
| WO2005010611A2 (en) * | 2003-07-08 | 2005-02-03 | Nikon Corporation | Wafer table for immersion lithography |
| EP1646075B1 (en) | 2003-07-09 | 2011-06-15 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| DE602004030247D1 (de) * | 2003-07-09 | 2011-01-05 | Nippon Kogaku Kk | Belichtungsvorrichtung und verfahren zur bauelementherstellung |
| KR101296501B1 (ko) * | 2003-07-09 | 2013-08-13 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7738074B2 (en) | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4524669B2 (ja) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | 投影光学系の検査方法および検査装置 |
| US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| KR101403117B1 (ko) * | 2003-07-28 | 2014-06-03 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
| EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4474652B2 (ja) | 2003-08-26 | 2010-06-09 | 株式会社ニコン | 光学素子及び露光装置 |
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|---|---|
| US20050094116A1 (en) | 2005-05-05 |
| JP2009016871A (ja) | 2009-01-22 |
| EP1510871B1 (en) | 2012-04-04 |
| JP2005093997A (ja) | 2005-04-07 |
| US20050094119A1 (en) | 2005-05-05 |
| EP1510871A3 (en) | 2005-04-06 |
| JP2005079589A (ja) | 2005-03-24 |
| SG109610A1 (en) | 2005-03-30 |
| JP3946212B2 (ja) | 2007-07-18 |
| US8208123B2 (en) | 2012-06-26 |
| US6954256B2 (en) | 2005-10-11 |
| EP1510871A2 (en) | 2005-03-02 |
| CN1591197A (zh) | 2005-03-09 |
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