CN100456467C - 具有导电穿透通道的硅芯片载体及其制造方法 - Google Patents
具有导电穿透通道的硅芯片载体及其制造方法 Download PDFInfo
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- CN100456467C CN100456467C CNB2004100906008A CN200410090600A CN100456467C CN 100456467 C CN100456467 C CN 100456467C CN B2004100906008 A CNB2004100906008 A CN B2004100906008A CN 200410090600 A CN200410090600 A CN 200410090600A CN 100456467 C CN100456467 C CN 100456467C
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- H01L2924/3025—Electromagnetic shielding
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
材料 | 杨氏模量(Gpa) | 泊松比 | CTE(ppm/℃) |
硅 | 170 | 0.28 | 3 |
掺杂的多晶硅 | 170 | 0.28 | 2 |
铜 | 130 | 0.34 | 16.5 |
钨 | 411 | 0.28 | 4.5 |
镍 | 200 | 0.31 | 13.4 |
Claims (43)
Applications Claiming Priority (2)
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US10/729,254 US7276787B2 (en) | 2003-12-05 | 2003-12-05 | Silicon chip carrier with conductive through-vias and method for fabricating same |
US10/729,254 | 2003-12-05 |
Publications (2)
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CN1684256A CN1684256A (zh) | 2005-10-19 |
CN100456467C true CN100456467C (zh) | 2009-01-28 |
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CNB2004100906008A Active CN100456467C (zh) | 2003-12-05 | 2004-11-05 | 具有导电穿透通道的硅芯片载体及其制造方法 |
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US (2) | US7276787B2 (zh) |
CN (1) | CN100456467C (zh) |
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US20050121768A1 (en) | 2005-06-09 |
US20060027934A1 (en) | 2006-02-09 |
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US7276787B2 (en) | 2007-10-02 |
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