TWI436466B - 直通矽晶穿孔結構及其製程 - Google Patents

直通矽晶穿孔結構及其製程 Download PDF

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Publication number
TWI436466B
TWI436466B TW100114689A TW100114689A TWI436466B TW I436466 B TWI436466 B TW I436466B TW 100114689 A TW100114689 A TW 100114689A TW 100114689 A TW100114689 A TW 100114689A TW I436466 B TWI436466 B TW I436466B
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Taiwan
Prior art keywords
copper
wafer
silicon via
wire pattern
covering
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TW100114689A
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English (en)
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TW201244042A (en
Inventor
Ming Ji Dai
Heng Chieh Chien
Ming Che Hsieh
Jui Feng Hung
Ra Min Tain
John H Lau
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Ind Tech Res Inst
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Priority to TW100114689A priority Critical patent/TWI436466B/zh
Priority to US13/174,794 priority patent/US8456017B2/en
Publication of TW201244042A publication Critical patent/TW201244042A/zh
Priority to US13/873,249 priority patent/US20130234325A1/en
Application granted granted Critical
Publication of TWI436466B publication Critical patent/TWI436466B/zh

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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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Description

直通矽晶穿孔結構及其製程
本發明是有關於一種電性連接結構，且特別是有關於一種直通矽晶穿孔結構。
半導體產業新興技術利用直通矽晶穿孔(Through-Silicon Vias，TSV)技術來連結垂直堆疊的晶片，不僅縮短晶片之間的導線、縮小元件尺寸，並幫助建構完整立體堆疊晶片架構。
直通矽晶穿孔結構需具備良好的熱機械可靠性(Thermo-Mechanical reliability)，以便於批量生產。但由於直通矽晶穿孔結構內填材料與矽晶之間熱膨脹係數(CTE)的差異，直通矽晶穿孔結構內部的應力常會導致塑料變形(plastic deformation)、應力誘發孔洞(stress-induced voiding)和應力遷移(stress migration)，界面處的應力能導致剝離和填孔彈出(pop up)(即“銅泵浦”)。
除了熱機械可靠性的問題之外，也要考慮直通矽晶穿孔結構的導電特性等問題，因此直通矽晶穿孔結構所選用之填充材料與填充方法等均要適當選擇，期以提高直通矽晶穿孔結構的可靠度。
本發明提供一種直通矽晶穿孔結構，包括至少一通孔貫穿一半導體晶圓或中介層晶圓、一絕緣層與阻障層完全覆蓋該通孔的側壁，以及一導電材料填充於該通孔內且填滿覆蓋著該絕緣層的該通孔。該導電材料為一複合材料至少包含銅和熱膨脹係數比銅小的增補材料顆粒，其中增補材料可選自於下列族群包括碳化矽(SiC)、鑽石、氧化鈹、氮化鋁、三氧化二鋁和鉬。
本發明提供一種堆疊晶片結構，該結構包含至少一晶片設置於一基板上，該晶片或該基板包括至少一直通矽晶穿孔結構，而該直通矽晶穿孔結構使得該晶片與該基板相互電性連結。該直通矽晶穿孔結構包括至少一通孔、一絕緣層完全覆蓋該通孔的側壁，以及一導電材料填充於該通孔內且填滿覆蓋著該絕緣層的該通孔。該導電材料為一複合材料至少包含銅和熱膨脹係數比銅小的增補材料顆粒，其中增補材料可選自於下列族群包括碳化矽(SiC)、鑽石、氧化鈹、氮化鋁、三氧化二鋁和鉬。
為讓本發明之上述特徵能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
本發明是關於直通矽晶穿孔結構與其相關製程，可幫助減少機械應力與熱應力造成直通矽晶穿孔結構變形或斷裂等情形，提高直通矽晶穿孔結構電性連結之可靠度。
本案說明書中所謂”晶片”包含所有目前電子或半導體技藝領域中已知之晶片，較佳但不限於，記憶體晶片、控制晶片或高射頻晶片等。
圖1A-1H’是依照本發明之較佳實施例的直通矽晶穿孔結構製造流程。
如圖1A，首先在一基底100中形成一或多個導孔開孔(via hole) 102，圖中雖只顯示出一個代表，但實際上可視需要形成多個，且可視產品需求採列、行或陣列排列。基底100為一半導體晶圓或中介層晶圓(如矽晶圓或砷化鎵晶圓或玻璃晶圓)或或其他異質的基材，其上表面100a更包括一氧化層101。開孔102的形成可使用Bosch深反應性離子蝕刻(Bosch Deep Reactive Ion Etching;Bosch DRIE)、低温型深反應性離子蝕刻(Cryogenic DRIE)、雷射鑽孔(Laser Drilling)，或其他非等向性蝕刻技術，甚或濕式蝕刻(等向性蝕刻)技術等。在開孔102形成製程上特別要求其較佳需達成開孔輪廓尺寸之一致性，以及開孔不能有殘渣存在：並且開孔的形成速度最好必須能夠達到相當高的速度需求，以因應量產之需求。開孔102尺寸規格則根據應用產品領域的不同需求而定，其直徑範圍約為5~100μm，深度範圍為10~500μm，導孔密度約為數百~數仟個/每一晶片(vias per chip)。
圖1A，當導孔開孔102形成後，接著在導孔開孔102側壁沉積形成絕緣層104，以作為矽基材和後續所形成導體間的絕緣材料。沉積絕緣層的方式，包括：熱化學氣相沉積(Thermal CVD)法、電漿輔助化學氣相沉積(PE-CVD)法，以及低壓化學氣相沉積(LP-CVD)法。絕緣層104之材質可為氧化物、氮化物或聚合物(Polymer)等。針對較大直徑直通矽晶穿孔結構導孔可能會有高電容產生而影響電性，可採用厚度約為2~5μm聚合物絕緣層，由於厚度較厚之聚合物絕緣層為低介電材料，可以解決一般絕緣層薄膜之高電容問題。聚合物例如是聚亞醯胺(PI)。使用聚合物絕緣層非但可減少導孔內銅的比例，進而降低矽與銅因熱膨脹係數差距大所產生的熱機械應力，而且此聚合物薄膜製程與晶圓後段導線製程，彼此具有相容性。
如圖1A，形成絕緣層104後，在絕緣層104上更形成一阻障層(Barrier layer)106，可防止銅的擴散。一般阻障層106會使用鈦(Ti)、鉭(Ta)、氮化鉭(TaN)等材料。
如圖1B，緊接著以導電材料108填充填滿導孔開孔102。一般導孔開孔填充的導電材料包括：銅(Cu)、鎢(W)和多晶矽(Polysilicon)等。其中，因銅具有優良導電率，常採用電鍍銅(Copper electroplating)作為直通矽晶穿孔結構導孔之充填方式。如果直通矽晶穿孔結構導孔深度較淺時，電鍍銅可完全充填導孔開孔。然而，當直通矽晶穿孔結構導孔之深度較深時，由於矽熱膨脹係數(3 ppm/℃)與銅熱膨脹係數(16 ppm/℃)相差極大，使用電鍍銅作導孔開孔的完全充填時，易會產生熱機械應力，進而導致直通矽晶穿孔結構內部與矽基材產生裂縫。故本案改採填補的方式將銅基複合導電材料當導孔開孔102的填充材料。導電材料108乃是將高導熱與低熱膨脹係數的材料(亦即增補材料)的顆粒添加於金屬基材內所做成的金屬複合材料。所謂高導熱與低熱膨脹係數的材料就是熱膨脹係數要比基材低(以銅基複合材料來說，亦即比銅低)而導熱性比基材高的材料，較佳是熱膨脹係數約低於10 ppm/℃(銅為17 ppm/℃)，可包括例如：碳化矽(SiC)、鑽石、氧化鈹、氮化鋁、三氧化二鋁和鉬等。圖中導電材料108所示之小圈僅示意代表添加增補材料顆粒。
此種銅基複合材料是填補的方式，可以是熱壓的方法，亦可以是共沉積(Co-Deposition)的方法複合電鍍於開孔102裡面。此舉共沉積的方法為例，其使用的電鍍鍍液調配與製程說明如下：採用硫酸銅溶液(CuSO2 ‧5H2 O: 210~240g/L；H2 SO4 : 50~70g/L)做電解液，陽極材料為磷銅，陽極為厚銅板，第二相為高導熱與低熱膨脹係數的顆粒材料(增補材料顆粒)，例如：可以是碳化矽、鑽石、氧化鈹、氮化鋁、三氧化二鋁或鉬顆粒，粒徑約在數十奈米至數十微米之間(最好補充較具體之範圍)。並選擇適合與適量的添加劑，可將三種添加劑：陽離子氟碳(fluorocarbon)表面活性劑、三乙醇胺(triethanolamine)與六次甲基四胺(hexamethylenetetramine)按一定比例混合而成，並採用攪拌擾動的方式，使第二相可利充分懸浮於鍍液。
通過添加第二相顆粒調配銅基複合材料，不但可以保持銅本身優良的導電與導熱特性，而且可獲得更好的力學特性。此外，可以透過調節第二相顆粒的含量來調控所形成複合材料的物理力學性能，使得銅基複合材料填充的直通矽晶穿孔結構能依照產品需求調整。第二相之高導熱與低熱膨脹係數的顆粒材料添加比例可小於或等於50%，約介於5~50%間。
以導電材料108填充填滿導孔開孔102後，可選擇性地再進行化學機械研磨(CMP)或研磨(Grinding)製程，以去除多餘導電材料108及/或阻障層106。
此處，已經完成了直通矽晶穿孔結構之基本填孔結構，但若要應用於垂直連接堆疊的晶片或元件，則仍須於連接面進一步加工。
如圖1C，形成第一鈍化層120後，再於填充的填孔結構108/106/104上形成導線圖案122作為重佈線層(redistribution layer)。
如圖1D，形成圖案化第二鈍化層124，使部份位於填孔結構108/106/104上的導線圖案122暴露出來(露出的部份標為122a)。
如圖1E，於露出的導線圖案122a上形成第一凸塊下金屬化結構(Under-Bump Metallization,UBM)129。第一凸塊下金屬化結構129包括銅墊126與形成於銅墊126上之接合墊128。該接合墊128的材質例如是鎳/鈀/金金屬材料(Ni/Pd/Au)或鎳/金金屬材料(Ni/Au)。
如圖1F，從該基底100的下表面100b來薄化該基底100，直至露出填孔結構108/106/104中的導電材料108為止。在薄化的過程，可利用一暫時載具(Temporary Carrier)200來固定基底100。一般暫時載具200為一矽基板或玻璃基板，以固定基底或晶圓的位置並利於翻面製程。
如圖1G所示，將基底100翻面，重複如圖1C-1E的步驟，在基底表面100b上依序形成第三鈍化層130與第四鈍化層134，且於填孔結構108/106/104上依序形成背導線圖案132與第二凸塊下金屬化結構(UBM) 139。第二凸塊下金屬化結構139包括銅墊136與形成於銅墊136上之接合墊138。該接合墊138的材質例如是鎳/鈀/金金屬材料(Ni/Pd/Au)或鎳/金金屬材料(Ni/Au)。移除暫時載具200後，即為直通矽晶穿孔結構10A，如圖1H。
或者，如圖1G’所示，在基底表面100b上依序形成第三鈍化層130與第四鈍化層134，且於填孔結構108/106/104上依序形成背導線圖案132、銅墊136與錫塊140。背導線圖案132可作為重佈線層，而銅墊136與錫塊140則可作為微凸塊(micro-bump)。移除暫時載具200後，即為直通矽晶穿孔結構10B，如圖1H’。
圖1H與1H’之差異主要在於直通矽晶穿孔結構兩面所連接之對象不同。若當作中介層(interposer)使用，則需形成圖1H之直通矽晶穿孔結構10A，以便基底100之兩面均可連接晶片。而圖1H’之直通矽晶穿孔結構10B乃是形成於半導體晶片中，也就是其基底100一面可連接另一晶片而另一面可連接中介層或其他基板。若是直通矽晶穿孔結構10B乃是形成於半導體晶片中，則圖1H’之後尚須進行晶圓切割的步驟，以把晶圓切成多個晶片。這些後續步驟乃為常知，故不在此詳敘。
至於應用的堆疊晶片結構，包含至少一個或多個晶片設置於至少一基板的單一面或兩面上，其中該晶片或該基板包括至少一直通矽晶穿孔結構，而該直通矽晶穿孔結構使得該晶片與該基板相互電性連結。圖2所示乃是將具直通矽晶穿孔結構之中介層10A兩面堆疊具直通矽晶穿孔結構的晶片10B&10B’所形成的堆疊結構2。在晶片10B&10B’與基板10A相接觸的那一面，具導線圖案1321、1322覆蓋住導電材料108，以及位於導線圖案1321、1322上的微凸塊1401、1402。晶片10B&10B’例如可分別是控制晶片與記憶體晶片。具直通矽晶穿孔結構之中介層10A兩面之導線圖案122&背導線圖案132並非為相同的圖案，可便利連接不同類型之晶片元件，甚或是異質晶片。而其兩面導線圖案122&132上更具有凸塊下金屬化結構129&139。
如此，可以透過直通矽晶穿孔結構來連結不同功能晶片或不同尺寸晶片，並更進一步連接至基板與印刷電路板。
此處，針對直通矽晶穿孔結構之填充材質來做比較，以評估是否能滿足直通矽晶穿孔結構對於高導熱與高機械性能的要求。在此以單純銅填充的直通矽晶穿孔結構做控制組，來與填充鑽石-銅(Diamond-Cu：簡稱DiCu)複合材料的直通矽晶穿孔結構來比較，其中複合材料的鑽石粉末添加量為50%。實驗所得熱機械模擬參數如表一所示。E代表楊式係數(Young's modules)，v代表蒲松氏比(Poisson's ratio)，並參照矽材於25℃&100℃的熱膨脹係數(CTE)。
由於使用鑽石-銅複合材料填充的直通矽晶穿孔結構(圖示標為DiCu TSV)的CTE不合度(CTE mismatch)比使用銅填充的直通矽晶穿孔結構(圖示標為Cu TSV)小，所以其形變彎曲(Warpage)程度可降低30%左右，Von Mise應力大小亦有明顯減少約40%，如圖3和4模擬結果所示，而其他的熱機械特性(應力、應變)也因添加鑽石粉末顆粒跟著降低。在電性模擬方面，由圖5的模擬結果可明顯發現，不管直通矽晶穿孔結構直徑為10、30或50μm，Cu TSV與DiCu TSV從50MHz到40GHz的頻段裡兩者關於傳輸的介入損失(Insertion loss)係數S21幾乎沒有明顯的差異。DiCu複合材料的導電率約在107 次方左右。
直通矽晶穿孔結構的直徑大小與複合材料所添加顆粒尺寸應相互搭配，以便達到較佳的導熱。在熱傳方面，當鑽石粉末顆粒添加量50%時，其顆粒尺寸大於60μm以上，DiCu複合材料的熱傳導係數是大於銅的400W/mK，當鑽石粉末顆粒尺寸小於20μm以下，DiCu複合材料的熱傳導係數是隨鑽石粉末的添加有所改變，若介面處理好的話會有一最高的值產生。當DiCu直通矽晶穿孔結構的直徑大於30μm以上，熱傳導性能方可高於矽的熱傳導係數(k=148W/mK)。而不同直徑或不同厚度(填孔深度)的直通矽晶穿孔結構來比較，隨矽的厚度越薄，熱傳導性能越佳。
以填充碳化矽-銅(SiC-Cu)複合材料的直通矽晶穿孔結構與單純銅填充的直通矽晶穿孔結構來比較，其中複合材料的碳化矽粉末添加量為20~30%，使用碳化矽-銅複合材料填充的直通矽晶穿孔結構的熱膨脹係數不合度也比使用銅填充的直通矽晶穿孔結構小，故熱機械可靠度較佳。
本發明提供一種直通矽晶穿孔結構，使用與矽熱膨脹係數較接近的導體材料，或添加高導熱與低熱膨脹係數的填充顆粒材料於銅材內做成銅基複合材料，填充於直通矽晶貫孔內，可有助於解決直通矽晶穿孔結構的熱機械問題，提高直通矽晶穿孔結構可靠度。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
2．．．堆疊晶片結構
10A．．．具直通矽晶穿孔結構之中介層
10B、10B’．．．具直通矽晶穿孔結構晶片
100．．．基底
100a、100b．．．基底表面
101．．．氧化層
102．．．導孔開孔
104．．．絕緣層
106．．．阻障層
108．．．導電材料
120、124、130、134．．．鈍化層
122、1221、1222．．．導線圖案
132、1321、1322．．．背導線圖案
126、136．．．銅墊
128、138．．．接合墊
129、139．．．凸塊下金屬化結構
140．．．錫塊
1401、1402．．．微凸塊
200．．．暫時載具
圖1A-1H’是依照本發明之較佳實施例的直通矽晶穿孔結構製造流程。
圖2是依照本發明之較佳實施例的一種堆疊晶片結構的剖面示意圖。
圖3顯示銅填充的直通矽晶穿孔結構與鑽石-銅複合材料填充的直通矽晶穿孔結構的形變彎曲大小比較。
圖4顯示銅填充的直通矽晶穿孔結構與鑽石-銅複合材料填充的直通矽晶穿孔結構的Von Mise應力大小比較。
圖5顯示銅填充的直通矽晶穿孔結構與鑽石-銅複合材料填充的直通矽晶穿孔結構的傳輸係數S21的比較。
2．．．堆疊晶片結構
10A．．．具直通矽晶穿孔結構之中介層
10B、10B’．．．具直通矽晶穿孔結構晶片
108．．．導電材料
122、1221、1222．．．導線圖案
132、1321、1322．．．背導線圖案
129、139．．．凸塊下金屬化結構
1401、1402．．．微凸塊

Claims (19)

  1. 一種直通矽晶穿孔結構，包括：至少一通孔位於一半導體晶圓或中介層晶圓兩相對的一第一表面和一第二表面之間並貫穿該半導體晶圓或中介層晶圓；一絕緣層與阻障層完全覆蓋該通孔的側壁；和一導電材料填充於該通孔內且填滿覆蓋著該絕緣層的該通孔，該導電材料為一複合材料至少包含銅和熱膨脹係數比銅小且導熱性比銅高的增補材料顆粒，其中增補材料可選自於鑽石、氧化鈹、氮化鋁或三氧化二鋁。
  2. 如申請專利範圍第1項所述之直通矽晶穿孔結構，其中增補材料顆粒的粒徑約在數十奈米至數十微米之間。
  3. 如申請專利範圍第1項所述之直通矽晶穿孔結構，其中增補材料顆粒的添加比例可小於或等於50%。
  4. 如申請專利範圍第1項所述之直通矽晶穿孔結構，其中增補材料顆粒的添加比例約介於5~50%間。
  5. 如申請專利範圍第1項所述之直通矽晶穿孔結構，更包括一第一導線圖案位於該第一表面並覆蓋住填充於該通孔內的該導電材料。
  6. 如申請專利範圍第5項所述之直通矽晶穿孔結構，更包括一第一凸塊下金屬化結構位於該第一導線圖案上。
  7. 如申請專利範圍第6項所述之直通矽晶穿孔結構，其中該第一凸塊下金屬化結構包括一銅墊與一接合墊。
  8. 如申請專利範圍第1項所述之直通矽晶穿孔結構， 更包括一第二導線圖案位於該第二表面並覆蓋住填充於該通孔內的該導電材料。
  9. 如申請專利範圍第8項所述之直通矽晶穿孔結構，更包括一第二凸塊下金屬化結構位於該第二導線圖案上。
  10. 如申請專利範圍第9項所述之直通矽晶穿孔結構，其中該第二凸塊下金屬化結構包括一銅墊與一接合墊。
  11. 如申請專利範圍第8項所述之直通矽晶穿孔結構，更包括一微凸塊位於該第二導線圖案上。
  12. 如申請專利範圍第7項或第10項所述之直通矽晶穿孔結構，其中該接合墊的材質為鎳/鈀/金(Ni/Pd/Au)或鎳/金(Ni/Au)。
  13. 一種堆疊晶片結構，包含：至少一晶片設置於一中介層上，該晶片或該中介層包括至少一直通矽晶穿孔結構，而該直通矽晶穿孔結構使得該晶片與該中介層相互電性連結，其中該直通矽晶穿孔結構包括：至少一通孔；一絕緣層與阻障層完全覆蓋該通孔的側壁；和一導電材料填充於該通孔內且填滿覆蓋著該絕緣層的該通孔，該導電材料為一複合材料至少包含銅和熱膨脹係數比銅小且導熱性比銅高的增補材料顆粒，其中增補材料可選自於鑽石、氧化鈹、氮化鋁或三氧化二鋁。
  14. 如申請專利範圍第13項所述之堆疊晶片結構，其中增補材料顆粒的粒徑約在數十奈米至數十微米之間。
  15. 如申請專利範圍第13項所述之堆疊晶片結構，其中增補材料顆粒的添加比例可小於或等於50%。
  16. 如申請專利範圍第13項所述之堆疊晶片結構，其中增補材料顆粒的添加比例約介於5~50%間。
  17. 如申請專利範圍第13項所述之堆疊晶片結構，更包括一第一導線圖案覆蓋住該直通矽晶穿孔結構的一面以及一第一凸塊下金屬化結構位於該第一導線圖案上。
  18. 如申請專利範圍第17項所述之堆疊晶片結構，更包括一第二導線圖案覆蓋住該直通矽晶穿孔結構的另一面以及一第二凸塊下金屬化結構位於該第二導線圖案上。
  19. 如申請專利範圍第17項所述之堆疊晶片結構，更包括一第二導線圖案覆蓋住該直通矽晶穿孔結構的另一面以及一微凸塊位於該第二導線圖案上。
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