ATE533186T1 - Halbleiteranordnung und optische vorrichtung - Google Patents

Halbleiteranordnung und optische vorrichtung

Info

Publication number
ATE533186T1
ATE533186T1 AT03019596T AT03019596T ATE533186T1 AT E533186 T1 ATE533186 T1 AT E533186T1 AT 03019596 T AT03019596 T AT 03019596T AT 03019596 T AT03019596 T AT 03019596T AT E533186 T1 ATE533186 T1 AT E533186T1
Authority
AT
Austria
Prior art keywords
optical device
semiconductor arrangement
semiconductor device
recess
support member
Prior art date
Application number
AT03019596T
Other languages
English (en)
Inventor
Hideo Asakawa
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Application granted granted Critical
Publication of ATE533186T1 publication Critical patent/ATE533186T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00—Illumination
    • Y10S362/80—Light emitting diode

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Die Bonding (AREA)
AT03019596T 2002-09-05 2003-09-03 Halbleiteranordnung und optische vorrichtung ATE533186T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002259482 2002-09-05
JP2003133874 2003-05-13

Publications (1)

Publication Number Publication Date
ATE533186T1 true ATE533186T1 (de) 2011-11-15

Family

ID=31719909

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03019596T ATE533186T1 (de) 2002-09-05 2003-09-03 Halbleiteranordnung und optische vorrichtung

Country Status (6)

Country Link
US (2) US6953952B2 (de)
EP (2) EP1396891B1 (de)
KR (1) KR100625720B1 (de)
CN (1) CN100477299C (de)
AT (1) ATE533186T1 (de)
TW (1) TWI292961B (de)

Families Citing this family (235)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076434A (ja) * 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd 発光装置
DE10131698A1 (de) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
USD537047S1 (en) * 2002-09-05 2007-02-20 Nichia Corporation Light emitting diode
USD536672S1 (en) * 2002-09-05 2007-02-13 Nichia Corporation Light emitting diode
EP2270887B1 (de) 2003-04-30 2020-01-22 Cree, Inc. Hochleistungs-lichtemitter-verkapselungen mit kompakter optik
EP2484962B1 (de) * 2003-05-05 2019-07-03 GE Lighting Solutions, LLC LED Lampe
USD566058S1 (en) * 2003-07-28 2008-04-08 Nichia Corporation Light emitting diode
USD538239S1 (en) * 2003-07-28 2007-03-13 Nichia Corp. Light emitting diode
JP4378242B2 (ja) * 2003-09-25 2009-12-02 株式会社小糸製作所 車両用灯具
TW200523503A (en) * 2003-09-29 2005-07-16 Sony Corp Backlight, light guiding plate, method for manufacturing diffusion plate and light guiding plate, and liquid crystal display device
US7326583B2 (en) * 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US7358544B2 (en) * 2004-03-31 2008-04-15 Nichia Corporation Nitride semiconductor light emitting device
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
CN100373641C (zh) * 2004-06-15 2008-03-05 亿光电子工业股份有限公司 发光二极管的封装结构
JP4789433B2 (ja) * 2004-06-30 2011-10-12 三洋電機株式会社 Ｌｅｄ表示器用筺体及びｌｅｄ表示器
KR100609734B1 (ko) * 2004-07-02 2006-08-08 럭스피아 주식회사 엘씨디 백라이트용 엘이디 패키지 및 그 제조방법
DE202004011015U1 (de) * 2004-07-14 2004-11-11 Tridonic Optoelectronics Gmbh LED-Strahler mit trichterförmiger Linse
US7417220B2 (en) * 2004-09-09 2008-08-26 Toyoda Gosei Co., Ltd. Solid state device and light-emitting element
JP2006108333A (ja) * 2004-10-04 2006-04-20 Toyoda Gosei Co Ltd ランプ
USD529877S1 (en) * 2004-10-18 2006-10-10 Rohm Co., Ltd. Light emitting diode
USD540269S1 (en) * 2004-10-18 2007-04-10 Rohm Co., Ltd. Package for light emitting diode
USD532382S1 (en) * 2004-10-18 2006-11-21 Rohm Co., Ltd. Package for light emitting diode
USD526971S1 (en) * 2004-10-18 2006-08-22 Rohm Co., Ltd. Light emitting diode
USD531966S1 (en) * 2004-10-18 2006-11-14 Rohm Co., Ltd. Light emitting diode
USD538240S1 (en) * 2004-10-18 2007-03-13 Rohm Co., Ltd. Package for light emitting diode
USD526970S1 (en) * 2004-10-18 2006-08-22 Rohm Co., Ltd. Light emitting diode
USD534876S1 (en) * 2004-10-18 2007-01-09 Rohm Co., Ltd. Package for light emitting diode
US20060108518A1 (en) * 2004-11-15 2006-05-25 Nsmc Holdings International Corp. Ltd. Structure for calibrating packaging of electric micro-optic modules
US7723736B2 (en) * 2004-12-14 2010-05-25 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
USD533517S1 (en) * 2004-12-27 2006-12-12 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
US20060171152A1 (en) * 2005-01-20 2006-08-03 Toyoda Gosei Co., Ltd. Light emitting device and method of making the same
US7939842B2 (en) 2005-01-27 2011-05-10 Cree, Inc. Light emitting device packages, light emitting diode (LED) packages and related methods
JP4980615B2 (ja) * 2005-02-08 2012-07-18 ローム株式会社 半導体発光素子およびその製法
US20060198008A1 (en) * 2005-03-07 2006-09-07 Micron Technology, Inc. Formation of micro lens by using flowable oxide deposition
JP5059739B2 (ja) * 2005-03-11 2012-10-31 ソウル セミコンダクター カンパニー リミテッド 直列接続された発光セルのアレイを有する発光ダイオードパッケージ
JP4698259B2 (ja) * 2005-03-16 2011-06-08 三洋電機株式会社 電子部品搭載用パッケージ及びパッケージ集合基板
USD534132S1 (en) * 2005-03-23 2006-12-26 Seoul Semiconductor Co. Ltd. Light emitting diode (LED)
JP4721159B2 (ja) * 2005-03-28 2011-07-13 ミネベア株式会社 面状照明装置
USD529452S1 (en) * 2005-04-08 2006-10-03 Seoul Semiconductor Co. Ltd. Light emitting diode (LED)
USD529451S1 (en) * 2005-05-13 2006-10-03 Seoul Semiconductor Co. Ltd. Light emitting diode (LED)
US7416906B2 (en) * 2005-05-18 2008-08-26 Asahi Rubber Inc. Soldering method for semiconductor optical device, and semiconductor optical device
KR100665178B1 (ko) * 2005-05-26 2007-01-09 삼성전기주식회사 발광다이오드 패키지 제조방법
US7736945B2 (en) 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
US7754507B2 (en) * 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
US7319246B2 (en) * 2005-06-23 2008-01-15 Lumination Llc Luminescent sheet covering for LEDs
WO2007009042A1 (en) * 2005-07-11 2007-01-18 Gelcore Llc Laser lift-off led with improved light extraction
JP2007027431A (ja) * 2005-07-15 2007-02-01 Toshiba Corp 発光装置
USD541759S1 (en) * 2005-07-19 2007-05-01 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
USD528999S1 (en) * 2005-07-19 2006-09-26 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
USD537798S1 (en) * 2005-07-19 2007-03-06 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
USD528998S1 (en) * 2005-07-22 2006-09-26 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
USD538760S1 (en) * 2005-07-22 2007-03-20 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
TW200717866A (en) * 2005-07-29 2007-05-01 Toshiba Kk Semiconductor light emitting device
JP4281839B2 (ja) * 2005-09-30 2009-06-17 日亜化学工業株式会社 発光装置及びそれを用いたバックライトユニット
DE102005048396A1 (de) * 2005-10-10 2007-04-19 Siemens Ag Sensorbaugruppe
TWI266441B (en) * 2005-10-26 2006-11-11 Lustrous Technology Ltd COB-typed LED package with phosphor
KR100780176B1 (ko) * 2005-11-25 2007-11-27 삼성전기주식회사 측면 방출 발광다이오드 패키지
JP4537308B2 (ja) * 2005-11-30 2010-09-01 シャープ株式会社 光ピックアップ装置およびそれを備える電子機器
JP2007172687A (ja) * 2005-12-19 2007-07-05 Toshiba Corp 情報記録再生装置及びその記録内容情報の調査及び提示方法
JP2007179950A (ja) * 2005-12-28 2007-07-12 Tdk Corp Ｅｌパネル
WO2007081719A2 (en) 2006-01-05 2007-07-19 Illumitex, Inc. Separate optical device for directing light from an led
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP4857791B2 (ja) * 2006-02-01 2012-01-18 日亜化学工業株式会社 半導体装置の製造方法
USD550171S1 (en) * 2006-02-21 2007-09-04 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
USD546783S1 (en) * 2006-02-21 2007-07-17 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
USD550170S1 (en) * 2006-02-21 2007-09-04 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
JP5068472B2 (ja) * 2006-04-12 2012-11-07 昭和電工株式会社 発光装置の製造方法
WO2007127029A2 (en) * 2006-04-24 2007-11-08 Cree, Inc. Side-view surface mount white led
USD551181S1 (en) * 2006-04-25 2007-09-18 Lg Innotek Co., Ltd Light-emitting diode (LED)
KR100820529B1 (ko) 2006-05-11 2008-04-08 엘지이노텍 주식회사 발광 장치 및 그 제조방법, 면 발광 장치
JP5326225B2 (ja) * 2006-05-29 2013-10-30 日亜化学工業株式会社 窒化物半導体発光素子
CN101461070B (zh) 2006-06-02 2013-07-24 日立化成株式会社 光半导体元件搭载用封装及使用其的光半导体装置
USD573549S1 (en) * 2006-06-21 2008-07-22 Lg Innotek Co., Ltd. Light emitting diode (LED)
TWM303493U (en) * 2006-07-21 2006-12-21 Lighthouse Technology Co Ltd Support rack structure and metal support rack of side light source SMD LED
KR20080013127A (ko) * 2006-08-07 2008-02-13 삼성전자주식회사 백라이트 유닛 및 이를 포함한 액정표시장치
US20080049445A1 (en) * 2006-08-25 2008-02-28 Philips Lumileds Lighting Company, Llc Backlight Using High-Powered Corner LED
USD548704S1 (en) * 2006-08-30 2007-08-14 Unity Opto Technology Co., Ltd. Edge-emitting light-emitting diode
USD566664S1 (en) * 2006-09-08 2008-04-15 Lg Innotek Co., Ltd. Light-emitting diode (LED)
USD577689S1 (en) 2006-09-15 2008-09-30 Nichia Corporation Light emitting diode
TW200816859A (en) * 2006-09-20 2008-04-01 Nikon Corp Methods of manufacturing optical device and resin-sealed light-emitting device, optical device, resin-sealed light-emitting device and flat lighting device
USD606948S1 (en) * 2006-09-28 2009-12-29 Cree, Inc. Led
JP2010506402A (ja) 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド Ｌｅｄのシステムおよび方法
TWI313943B (en) * 2006-10-24 2009-08-21 Chipmos Technologies Inc Light emitting chip package and manufacturing thereof
US20080145960A1 (en) * 2006-12-15 2008-06-19 Gelcore, Llc Super thin LED package for the backlighting applications and fabrication method
TWI325644B (en) * 2007-01-03 2010-06-01 Chipmos Technologies Inc Chip package and manufacturing thereof
TWI329934B (en) * 2007-01-17 2010-09-01 Chi Mei Lighting Tech Corp Lead frame structure of light emitting diode
USD595673S1 (en) 2007-01-19 2009-07-07 Cree, Inc. Light emitting diode
US7968900B2 (en) * 2007-01-19 2011-06-28 Cree, Inc. High performance LED package
JP2008198716A (ja) * 2007-02-09 2008-08-28 Eudyna Devices Inc 光半導体装置
JP2008198807A (ja) * 2007-02-14 2008-08-28 Nichia Corp 半導体装置
US8395318B2 (en) * 2007-02-14 2013-03-12 Ritedia Corporation Diamond insulated circuits and associated methods
US7993038B2 (en) * 2007-03-06 2011-08-09 Toyoda Gosei Co., Ltd. Light-emitting device
USD573552S1 (en) * 2007-03-12 2008-07-22 Seoul Semiconductor Co., Ltd. Light emitting diode (LED)
US8251530B2 (en) * 2007-03-26 2012-08-28 Nichia Corporation Light emitting device
US20080246397A1 (en) * 2007-04-04 2008-10-09 Bily Wang Manufacturing method of white light led and structure thereof
JP2008258530A (ja) 2007-04-09 2008-10-23 Rohm Co Ltd 半導体発光装置
USD589909S1 (en) * 2007-04-19 2009-04-07 Lg Innotek Co., Ltd. Light emitting diode
US7910944B2 (en) * 2007-05-04 2011-03-22 Cree, Inc. Side mountable semiconductor light emitting device packages and panels
US7566159B2 (en) * 2007-05-31 2009-07-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Side-emitting LED package with improved heat dissipation
USD579425S1 (en) * 2007-06-01 2008-10-28 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
KR101326888B1 (ko) * 2007-06-20 2013-11-11 엘지이노텍 주식회사 반도체 발광소자 패키지
USD597967S1 (en) * 2007-06-20 2009-08-11 Lg Innotek Co., Ltd. Light-emitting diode (LED)
USD585849S1 (en) * 2007-06-20 2009-02-03 Lg Innotek Co., Ltd. Light-emitting diode (LED)
KR20090002835A (ko) * 2007-07-04 2009-01-09 엘지전자 주식회사 질화물계 발광 소자 및 그 제조방법
US7893545B2 (en) * 2007-07-18 2011-02-22 Infineon Technologies Ag Semiconductor device
USD590783S1 (en) * 2007-08-31 2009-04-21 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emitting diode
JP2009059870A (ja) * 2007-08-31 2009-03-19 Sanyo Electric Co Ltd 発光モジュールおよびその製造方法
TWD128524S1 (zh) * 2007-09-13 2009-05-01 豊田合成股份有限公司 發光二極體
TW200917522A (en) * 2007-10-05 2009-04-16 Bright View Electronics Co Ltd Foot stand structure of LED
JP5277610B2 (ja) 2007-10-29 2013-08-28 日亜化学工業株式会社 発光装置及び面発光装置並びに発光装置用パッケージ
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
TWD130666S1 (zh) * 2007-12-27 2009-09-01 豊田合成股份有限公司 發光二極體
JP5426091B2 (ja) * 2007-12-27 2014-02-26 豊田合成株式会社 発光装置
USD589910S1 (en) * 2007-12-27 2009-04-07 Toyoda Gosei Co., Ltd. Light emitting diode
KR100969142B1 (ko) * 2008-01-25 2010-07-08 알티전자 주식회사 측면 발광 다이오드 패키지
JP4683053B2 (ja) * 2008-01-28 2011-05-11 日亜化学工業株式会社 射出成形用金型及びこれによって成形される半導体パッケージ並びに半導体パッケージの製造方法
EP2244310B1 (de) * 2008-02-08 2016-06-29 Nichia Corporation Lichtemittierende vorrichtung
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
DE102008011862A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Miniaturgehäuse, Trägeranordnung mit mindestens einem Miniaturgehäuse, sowie ein Verfahren zur Herstellung einer Trägeranordnung
USD608739S1 (en) 2008-04-21 2010-01-26 Cree, Inc. Led
TWI351777B (en) * 2008-04-22 2011-11-01 Silicon Base Dev Inc Bade for light diode and its manufacturing method
TWD133925S1 (zh) * 2008-05-21 2010-03-21 Ａｌｔｉ電子股份有限公司 發光二極體
USD605609S1 (en) * 2008-05-21 2009-12-08 Alti-Electronics Co., Ltd Light emitting diode
USD606032S1 (en) * 2008-05-21 2009-12-15 Alti-Electronics Co., Ltd. Light emitting diode
USD605608S1 (en) * 2008-05-21 2009-12-08 Alti-Electronics Co., Ltd Light emitting diode
JP2010003743A (ja) * 2008-06-18 2010-01-07 Toshiba Corp 発光装置
TW201000806A (en) * 2008-06-19 2010-01-01 Lighthouse Technology Co Ltd Light-emitting component and its forming mold
KR100986202B1 (ko) * 2008-07-01 2010-10-07 알티전자 주식회사 사이드 뷰 발광 다이오드 패키지
TWI397195B (zh) * 2008-07-07 2013-05-21 榮創能源科技股份有限公司 發光二極體元件及背光模組
TWI456784B (zh) * 2008-07-29 2014-10-11 日亞化學工業股份有限公司 發光裝置
USD608307S1 (en) 2008-08-28 2010-01-19 Cree, Inc. Light emitting diode
JP5217800B2 (ja) 2008-09-03 2013-06-19 日亜化学工業株式会社 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
WO2010029872A1 (ja) 2008-09-09 2010-03-18 昭和電工株式会社 発光装置、発光モジュール、表示装置
KR101101135B1 (ko) * 2008-10-01 2012-01-05 삼성엘이디 주식회사 액정고분자를 이용한 발광다이오드 패키지
KR101515833B1 (ko) 2008-10-08 2015-05-04 삼성전자주식회사 광학 장치
KR101007131B1 (ko) 2008-11-25 2011-01-10 엘지이노텍 주식회사 발광 소자 패키지
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
TWD133197S1 (zh) * 2008-12-23 2010-02-01 億光電子工業股份有限公司 發光二極體
US10431567B2 (en) 2010-11-03 2019-10-01 Cree, Inc. White ceramic LED package
TWI437731B (zh) * 2009-03-06 2014-05-11 榮創能源科技股份有限公司 一種具有提升光取出率之半導體光電元件及其製造方法
US8610156B2 (en) * 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
JP4375497B1 (ja) * 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
US9142592B2 (en) * 2009-04-09 2015-09-22 Infineon Technologies Ag Integrated circuit including ESD device
JP4947095B2 (ja) * 2009-06-16 2012-06-06 住友化学株式会社 光取り出し構造体
JP2011014766A (ja) * 2009-07-03 2011-01-20 Koito Mfg Co Ltd 発光モジュールおよび車両用灯具
JP4686643B2 (ja) * 2009-07-03 2011-05-25 シャープ株式会社 半導体発光素子搭載用基板、バックライトシャーシ、表示装置、及び、テレビ受信装置
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
KR101039931B1 (ko) * 2009-10-21 2011-06-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
TWI425396B (zh) 2009-11-25 2014-02-01 Coretronic Corp 光學觸控裝置與光學觸控顯示裝置
USD624030S1 (en) * 2009-12-11 2010-09-21 Everlight Electronics Co., Ltd. Light emitting diode
USD633053S1 (en) * 2009-12-11 2011-02-22 Everlight Electronics Co., Ltd. Light emitting diode
USD633449S1 (en) * 2009-12-11 2011-03-01 Everlight Electronics Co., Ltd. Light emitting diode
USD624883S1 (en) * 2009-12-11 2010-10-05 Everlight Electronics Co., Ltd. Light emitting diode
TWD138646S1 (zh) 2009-12-11 2011-01-11 億光電子工業股份有限公司 發光二極體
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
US8525213B2 (en) * 2010-03-30 2013-09-03 Lg Innotek Co., Ltd. Light emitting device having multiple cavities and light unit having the same
KR20110108832A (ko) * 2010-03-30 2011-10-06 엘지이노텍 주식회사 발광 소자, 라이트 유닛 및 이를 구비한 표시 장치
MX2013005202A (es) * 2010-03-30 2013-11-20 Changchn Inst Of Applied Chemistry Chinese Academy Of Sciences Dispositivo de corriente alterna de led blanco.
USD630170S1 (en) * 2010-03-31 2011-01-04 Everlight Electronics Co., Ltd. Light emitting diode
US8723409B2 (en) * 2010-04-07 2014-05-13 Nichia Corporation Light emitting device
US8901583B2 (en) * 2010-04-12 2014-12-02 Cree Huizhou Opto Limited Surface mount device thin package
USD636740S1 (en) 2010-06-09 2011-04-26 Everlight Electronics Co., Ltd. Light emitting diode
JP5100823B2 (ja) * 2010-06-25 2012-12-19 日本航空電子工業株式会社 バックライトアセンブリ、バックライトユニット、及び液晶表示装置
CN102332523B (zh) * 2010-07-13 2014-09-03 比亚迪股份有限公司 一种led支架及其生产工艺
US9831393B2 (en) 2010-07-30 2017-11-28 Cree Hong Kong Limited Water resistant surface mount device package
CN103201213B (zh) * 2010-08-04 2016-04-13 宇部兴产株式会社 硅氮化物磷光体用氮化硅粉末、利用该粉末的CaAlSiN3磷光体、利用该粉末的Sr2Si5N8磷光体、利用该粉末的(Sr,Ca)AlSiN3磷光体、利用该粉末的La3Si6N11磷光体和该磷光体的制造方法
JP5778999B2 (ja) * 2010-08-06 2015-09-16 日亜化学工業株式会社 発光装置および画像表示ユニット
TWI462340B (zh) 2010-09-08 2014-11-21 晶元光電股份有限公司 一種發光結構及其製造方法
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8829777B2 (en) 2010-09-27 2014-09-09 Osram Sylvania Inc. Ceramic wavelength converter and LED light source containing same
KR101724707B1 (ko) * 2010-10-05 2017-04-10 엘지이노텍 주식회사 라이트 유닛
US9240395B2 (en) 2010-11-30 2016-01-19 Cree Huizhou Opto Limited Waterproof surface mount device package and method
CN102593308A (zh) * 2011-01-11 2012-07-18 展晶科技(深圳)有限公司 发光二极管封装结构
USD645423S1 (en) * 2011-01-22 2011-09-20 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
USD645830S1 (en) * 2011-01-22 2011-09-27 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
USD645422S1 (en) * 2011-01-22 2011-09-20 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
KR101210066B1 (ko) 2011-01-31 2012-12-07 엘지이노텍 주식회사 광 변환 부재 및 이를 포함하는 표시장치
JP2012238830A (ja) * 2011-05-09 2012-12-06 Lumirich Co Ltd 発光ダイオード素子
TWI427312B (zh) * 2011-07-11 2014-02-21 凌耀科技股份有限公司 反射光探測系統
KR101305696B1 (ko) 2011-07-14 2013-09-09 엘지이노텍 주식회사 표시장치 및 광학 부재
KR20130009020A (ko) 2011-07-14 2013-01-23 엘지이노텍 주식회사 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법
KR101893494B1 (ko) 2011-07-18 2018-08-30 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
KR101262520B1 (ko) 2011-07-18 2013-05-08 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
KR101241549B1 (ko) * 2011-07-18 2013-03-11 엘지이노텍 주식회사 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법
JP5545279B2 (ja) 2011-09-20 2014-07-09 豊田合成株式会社 面状光源装置
KR101251815B1 (ko) 2011-11-07 2013-04-09 엘지이노텍 주식회사 광학 시트 및 이를 포함하는 표시장치
US8575645B2 (en) * 2011-11-22 2013-11-05 GEM Weltronics TWN Corporation Thin multi-layer LED array engine
CN103187485A (zh) * 2011-12-27 2013-07-03 展晶科技(深圳)有限公司 发光二极管的制造方法
JP2013171626A (ja) * 2012-02-17 2013-09-02 Sharp Corp 光源基板および光源モジュール
WO2013137005A1 (ja) * 2012-03-13 2013-09-19 シャープ株式会社 発光装置およびバックライト装置
CN102623621A (zh) * 2012-04-12 2012-08-01 深圳雷曼光电科技股份有限公司 荧光胶成膜led封装工艺及led封装
CN103531490B (zh) * 2012-07-03 2016-06-01 上海微电子装备有限公司 一种具有可控曲率的凹面结构的封装结构及其制造方法
WO2014041742A1 (ja) 2012-09-14 2014-03-20 パナソニック株式会社 固体撮像装置及びカメラモジュール
TWI448538B (zh) 2012-10-23 2014-08-11 Ind Tech Res Inst 螢光材料與紫外光發光裝置
KR102019499B1 (ko) * 2012-11-05 2019-09-06 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
US20140208689A1 (en) 2013-01-25 2014-07-31 Renee Joyal Hypodermic syringe assist apparatus and method
WO2014115064A1 (en) 2013-01-25 2014-07-31 Koninklijke Philips N.V. Lighting assembly and method for manufacturing a lighting assembly
CN103972353B (zh) * 2013-01-25 2017-04-19 一诠精密电子工业(中国)有限公司 发光二极管的支架制法
JP6398222B2 (ja) 2013-02-28 2018-10-03 日亜化学工業株式会社 発光装置およびその製造方法
JP6131664B2 (ja) 2013-03-25 2017-05-24 日亜化学工業株式会社 発光装置の製造方法および発光装置
DE102013103226A1 (de) 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
US9099861B2 (en) * 2013-05-23 2015-08-04 Inpaq Technology Co., Ltd. Over-voltage protection device and method for preparing the same
US9711489B2 (en) 2013-05-29 2017-07-18 Cree Huizhou Solid State Lighting Company Limited Multiple pixel surface mount device package
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
KR102123039B1 (ko) 2013-07-19 2020-06-15 니치아 카가쿠 고교 가부시키가이샤 발광 장치 및 그 제조 방법
US9673364B2 (en) * 2013-07-19 2017-06-06 Nichia Corporation Light emitting device and method of manufacturing the same
JP6236999B2 (ja) * 2013-08-29 2017-11-29 日亜化学工業株式会社 発光装置
WO2015104619A1 (en) * 2014-01-08 2015-07-16 Koninklijke Philips N.V. Deep molded reflector cup used as complete led package
JP6318844B2 (ja) * 2014-05-20 2018-05-09 日亜化学工業株式会社 発光装置
JP6578735B2 (ja) 2014-05-21 2019-09-25 日亜化学工業株式会社 半導体装置の実装構造、バックライト装置及び実装基板
KR101532878B1 (ko) * 2014-05-29 2015-06-30 성균관대학교산학협력단 발광다이오드 패키지
CN104134743A (zh) * 2014-06-17 2014-11-05 京东方光科技有限公司 Led封装结构及封装方法、显示装置、照明装置
JP6279737B2 (ja) * 2014-07-18 2018-02-14 堺ディスプレイプロダクト株式会社 光源装置及び表示装置
US10238363B2 (en) * 2014-08-21 2019-03-26 Richard D. Striano Needle guide for ultrasound transducer
JP6206442B2 (ja) * 2015-04-30 2017-10-04 日亜化学工業株式会社 パッケージ及びその製造方法、並びに発光装置
DE102015109877A1 (de) * 2015-06-19 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN105090800A (zh) * 2015-08-11 2015-11-25 京东方科技集团股份有限公司 Led发光器件、led灯条、背光模组及显示装置
DE102015116263A1 (de) * 2015-09-25 2017-03-30 Osram Opto Semiconductors Gmbh Herstellung eines elektronischen Bauelements
KR20170075897A (ko) 2015-12-23 2017-07-04 삼성전자주식회사 발광 다이오드 패키지
US10615320B2 (en) * 2016-01-12 2020-04-07 Maven Optronics Co., Ltd. Recessed chip scale packaging light emitting device and manufacturing method of the same
US10424699B2 (en) * 2016-02-26 2019-09-24 Nichia Corporation Light emitting device
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
JP6493348B2 (ja) * 2016-09-30 2019-04-03 日亜化学工業株式会社 発光装置
EP3309446A1 (de) * 2016-10-17 2018-04-18 Lumileds Holding B.V. Lichtumwandlungsvorrichtung mit geklemmtem lichtwandler
KR102674066B1 (ko) 2016-11-11 2024-06-13 삼성전자주식회사 발광 소자 패키지
CN110036493A (zh) * 2016-11-22 2019-07-19 国立研究开发法人情报通信研究机构 具备放射深紫外光的半导体发光元件的发光组件
JP6863071B2 (ja) * 2017-05-19 2021-04-21 日亜化学工業株式会社 希土類アルミニウム・ガリウム酸塩の組成を有する蛍光体及び発光装置
JPWO2019082480A1 (ja) * 2017-10-25 2020-11-19 パナソニックＩｐマネジメント株式会社 光半導体装置用パッケージ、光半導体装置および光半導体装置用パッケージの製造方法
TWI713237B (zh) * 2018-08-01 2020-12-11 大陸商光寶光電（常州）有限公司 發光二極體封裝結構
CN110828438B (zh) * 2018-08-13 2025-08-08 光宝光电(常州)有限公司 发光二极管封装结构
US11664356B2 (en) 2020-03-26 2023-05-30 Nichia Corporation Light emitting device
CN113889547A (zh) * 2020-07-02 2022-01-04 贵州师范学院 一种光电探测器及其制备方法
CN114335298A (zh) * 2021-11-27 2022-04-12 江西晶众腾光电科技有限公司 一种6050led封装支架及led灯珠
CN119027491B (zh) * 2024-07-24 2025-09-30 福建旗山湖医疗科技有限公司 一种无透镜光源标记定位系统及其标定方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US495667A (en) * 1893-04-18 Harry dunning
US495668A (en) * 1893-04-18 Veterinary ecraseur
JPH02306639A (ja) * 1989-05-22 1990-12-20 Toshiba Corp 半導体装置の樹脂封入方法
DE58909875D1 (de) * 1989-05-31 2000-08-31 Osram Opto Semiconductors Gmbh Verfahren zum Montieren eines oberflächenmontierbaren Opto-Bauelements
JPH06204569A (ja) 1992-12-28 1994-07-22 Casio Comput Co Ltd 発光ダイオードの構造
JPH0779058A (ja) * 1993-09-07 1995-03-20 Toshiba Corp 光通信部品の基板実装装置
JPH07214600A (ja) 1994-02-02 1995-08-15 Fuji Electric Co Ltd 透明樹脂封止型半導体装置の成形用金型
SE9402082L (sv) * 1994-06-14 1995-12-15 Ericsson Telefon Ab L M Optisk miniatyrkapsel
JPH0832120A (ja) * 1994-07-19 1996-02-02 Rohm Co Ltd 面発光表示器
JP3642823B2 (ja) 1995-03-27 2005-04-27 ローム株式会社 側面発光装置
JPH0927643A (ja) * 1995-07-13 1997-01-28 Stanley Electric Co Ltd 受光／発光素子
JPH0983018A (ja) * 1995-09-11 1997-03-28 Nippon Denyo Kk 発光ダイオードユニット
DE19535777A1 (de) * 1995-09-26 1997-03-27 Siemens Ag Optoelektronisches Halbleiter-Bauelement und Verfahren zur Herstellung
JPH09153646A (ja) * 1995-09-27 1997-06-10 Toshiba Corp 光半導体装置およびその製造方法
JP3241976B2 (ja) * 1995-10-16 2001-12-25 株式会社東芝 半導体発光素子
JP3065263B2 (ja) * 1996-12-27 2000-07-17 日亜化学工業株式会社 発光装置及びそれを用いたｌｅｄ表示器
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
EP1566846B1 (de) * 1997-07-29 2016-02-03 OSRAM Opto Semiconductors GmbH Optoelektronisches Bauelement
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes
TW468258B (en) * 1998-10-21 2001-12-11 Hitachi Ltd Semiconductor device and method of manufacturing the same
JP2000196153A (ja) 1998-12-25 2000-07-14 Rohm Co Ltd チップ電子部品およびその製造方法
JP2000269551A (ja) * 1999-03-18 2000-09-29 Rohm Co Ltd チップ型発光装置
KR100677065B1 (ko) * 1999-04-29 2007-02-01 삼성전자주식회사 광커넥터 모듈
JP4038942B2 (ja) 1999-08-03 2008-01-30 ソニー株式会社 半導体装置及びその製造方法
KR20000036312A (ko) * 2000-01-04 2000-07-05 김근주 종묘발아 농업용 반도체 발광소자 및 어레이 제작방법
JP2001196644A (ja) 2000-01-11 2001-07-19 Nichia Chem Ind Ltd 光半導体装置及びその製造方法
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
JP2002198570A (ja) 2000-12-26 2002-07-12 Toyoda Gosei Co Ltd 固体光素子
JP4631175B2 (ja) 2001-01-26 2011-02-16 日亜化学工業株式会社 パッケージ成形体と発光装置
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
US6812481B2 (en) * 2001-09-03 2004-11-02 Toyoda Gosei Co., Ltd. LED device and manufacturing method thereof
KR100499129B1 (ko) 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
USD495667S1 (en) 2003-11-06 2004-09-07 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode
USD495668S1 (en) 2003-11-10 2004-09-07 Samsung Electro-Mechanics Co., Ltd. Light-emitting diode

Also Published As

Publication number Publication date
EP1396891B1 (de) 2011-11-09
US6953952B2 (en) 2005-10-11
TW200409384A (en) 2004-06-01
KR20040022177A (ko) 2004-03-11
TWI292961B (en) 2008-01-21
KR100625720B1 (ko) 2006-09-20
US20050277216A1 (en) 2005-12-15
CN1492521A (zh) 2004-04-28
EP2273570A1 (de) 2011-01-12
EP2273570B1 (de) 2019-08-07
EP1396891A3 (de) 2008-05-07
CN100477299C (zh) 2009-04-08
EP1396891A2 (de) 2004-03-10
US8623255B2 (en) 2014-01-07
US20040046242A1 (en) 2004-03-11

Similar Documents

Publication Publication Date Title
ATE533186T1 (de) Halbleiteranordnung und optische vorrichtung
ATE360815T1 (de) Quartzkristall sensorzelle
ATE414926T1 (de) Bildaufnahmelinseneinheit und tragbares endgerät
DE60328751D1 (de) Lampeneinrichtung, Lampen- und optische Linsen- Anordnung und Lampengehäuse
EP1244151A3 (de) Halbleiterbauelement und Herstellungsverfahren
ATE549743T1 (de) Ein lithographiesystem mit einem halterungssystem
AU2003210437A8 (en) Sensor device having an integral bi-radial lens
ATE295691T1 (de) Schutzelement, speziell für kurze hosen
DE602004016275D1 (de) Träger, Tintenstrahldruckkopf mit Träger, und Herstellungsverfaren von Tintenstrahldruckkopf mit Träger
DK0654819T3 (da) Fremgangsmåde til fremstilling af en anordning til varmeafledning
DE602004018852D1 (de) Herstellungsverfahren für ein Kameramodul
EP1416069A4 (de) Organisches halbleiterelement
DE60232857D1 (de) Befestigen von schutzkappen auf wafer-ebene
DE60221377D1 (de) Undurchlässiges gehäuse für ein optisches halbleiterbauelement
ATE341118T1 (de) Trennung von integrierten optischen modulen und strukturen
AU2003296244A8 (en) Optical subassembly and projection objective for semiconductor lithography
ATE409960T1 (de) Lichtempfangseinrichtung
DE50300739D1 (de) Vorrichtung zur aufnahme von substraten
TW200742212A (en) Optical pump semiconductor device
ES2103778T3 (es) Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador.
TW200605172A (en) Substrate, semiconductor device, method of manufacturing substrate, and method of manufacturing semiconductor device
ATE543100T1 (de) Analyseinstrument
ATE357980T1 (de) Piezoelektrischer ultraschallwandler
ATE357741T1 (de) Leistungshalbleitermodul mit sensorikbauteil
FR2747841B1 (fr) Procede de fabrication d'elements semi-conducteurs presentant des structures micromecaniques