ATE525757T1 - Organischer feldeffekttransistor mit organischem dielektrikum - Google Patents

Organischer feldeffekttransistor mit organischem dielektrikum

Info

Publication number
ATE525757T1
ATE525757T1 AT02779719T AT02779719T ATE525757T1 AT E525757 T1 ATE525757 T1 AT E525757T1 AT 02779719 T AT02779719 T AT 02779719T AT 02779719 T AT02779719 T AT 02779719T AT E525757 T1 ATE525757 T1 AT E525757T1
Authority
AT
Austria
Prior art keywords
organic
field effect
effect transistor
insulating material
dielectric
Prior art date
Application number
AT02779719T
Other languages
German (de)
English (en)
Inventor
Stephen William Leeming
Soad Mohialdin-Khaffaf
Simon Dominic Ogier
Janos Veres
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27256358&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE525757(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from GB0130321A external-priority patent/GB0130321D0/en
Priority claimed from GB0130451A external-priority patent/GB0130451D0/en
Priority claimed from GB0220504A external-priority patent/GB0220504D0/en
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Application granted granted Critical
Publication of ATE525757T1 publication Critical patent/ATE525757T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/008—Triarylamine dyes containing no other chromophores
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B69/00—Dyes not provided for by a single group of this subclass
    • C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
    • C09B69/109—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing other specific dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/11—Homopolymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/12—Copolymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
    • C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/316—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain bridged by heteroatoms, e.g. N, P, Si or B
    • C08G2261/3162—Arylamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/92—TFT applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrodes Of Semiconductors (AREA)
AT02779719T 2001-12-19 2002-11-21 Organischer feldeffekttransistor mit organischem dielektrikum ATE525757T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0130321A GB0130321D0 (en) 2001-12-19 2001-12-19 Electronic devices
GB0130451A GB0130451D0 (en) 2001-12-20 2001-12-20 Electronic devices
GB0220504A GB0220504D0 (en) 2002-09-03 2002-09-03 Electronic devices
PCT/GB2002/005248 WO2003052841A1 (en) 2001-12-19 2002-11-21 Organic field effect transistor with an organic dielectric

Publications (1)

Publication Number Publication Date
ATE525757T1 true ATE525757T1 (de) 2011-10-15

Family

ID=27256358

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02779719T ATE525757T1 (de) 2001-12-19 2002-11-21 Organischer feldeffekttransistor mit organischem dielektrikum

Country Status (9)

Country Link
US (1) US7029945B2 (https=)
EP (3) EP1459392B1 (https=)
JP (3) JP2005513788A (https=)
KR (1) KR100949304B1 (https=)
AT (1) ATE525757T1 (https=)
AU (1) AU2002343058A1 (https=)
CA (1) CA2469912A1 (https=)
NO (1) NO20043049L (https=)
WO (1) WO2003052841A1 (https=)

Families Citing this family (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241528A (ja) * 2003-02-05 2004-08-26 Ricoh Co Ltd 有機半導体装置及びそれを有する表示素子
GB0303267D0 (en) * 2003-02-13 2003-03-19 Plastic Logic Ltd Non lineur capacitors
US6950299B2 (en) 2003-02-13 2005-09-27 Plastic Logic Limited Non-linear capacitors
KR100726114B1 (ko) * 2003-06-27 2007-06-12 티디케이가부시기가이샤 전계 효과 트랜지스터
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP4325479B2 (ja) * 2003-07-17 2009-09-02 セイコーエプソン株式会社 有機トランジスタの製造方法、アクティブマトリクス装置の製造方法、表示装置の製造方法および電子機器の製造方法
JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
GB0318817D0 (en) * 2003-08-11 2003-09-10 Univ Cambridge Tech Method of making a polymer device
DE10340608A1 (de) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht
JP2005079549A (ja) * 2003-09-03 2005-03-24 Victor Co Of Japan Ltd 有機薄膜トランジスタ
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
US8450723B2 (en) 2003-11-04 2013-05-28 Alcatel Lucent Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain
EP1783781A3 (en) 2003-11-28 2007-10-03 Merck Patent GmbH Organic semiconducting layer formulations comprising polyacenes and organic binder polymers
JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005191437A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 半導体装置、その製造方法、および表示装置
GB0400997D0 (en) 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
US7256436B2 (en) * 2004-03-30 2007-08-14 Shin-Etsu Chemical Co., Ltd. Thin-film field-effect transistors and making method
JP4449549B2 (ja) * 2004-04-15 2010-04-14 日本電気株式会社 有橋環式炭化水素ラクトン構造を有する材料を用いた有機薄膜トランジスタとその製造方法
US7372070B2 (en) * 2004-05-12 2008-05-13 Matsushita Electric Industrial Co., Ltd. Organic field effect transistor and method of manufacturing the same
KR100560796B1 (ko) 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
KR100635567B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
EP1648040B1 (en) * 2004-08-31 2016-06-01 Osaka University Thin-layer chemical transistors and their manufacture
GB2418062A (en) * 2004-09-03 2006-03-15 Seiko Epson Corp An organic Field-Effect Transistor with a charge transfer injection layer
US7528176B2 (en) * 2004-09-14 2009-05-05 Northwestern University Carbonyl-functionalized thiophene compounds and related device structures
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ
KR100669752B1 (ko) 2004-11-10 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치
KR101122231B1 (ko) * 2004-12-17 2012-03-19 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101142998B1 (ko) 2004-12-20 2012-05-08 재단법인서울대학교산학협력재단 유기 절연막 및 유기 절연막을 포함하는 박막 트랜지스터표시판 및 그 제조 방법
US7605394B2 (en) * 2004-12-23 2009-10-20 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
KR101086159B1 (ko) * 2005-01-07 2011-11-25 삼성전자주식회사 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터
JP2006229053A (ja) * 2005-02-18 2006-08-31 Ricoh Co Ltd 有機半導体層を有する電界効果型有機薄膜トランジスタ
JP2008537634A (ja) 2005-02-18 2008-09-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電子デバイス
US7619242B2 (en) * 2005-02-25 2009-11-17 Xerox Corporation Celluloses and devices thereof
JP4450214B2 (ja) * 2005-03-11 2010-04-14 セイコーエプソン株式会社 有機薄膜トランジスタ、電子デバイスおよび電子機器
JP4951868B2 (ja) * 2005-03-18 2012-06-13 凸版印刷株式会社 薄膜トランジスタの製造方法
ES2450169T3 (es) * 2005-03-23 2014-03-24 Turkiye Sise Ve Cam Fabrikalari A.S. Transistores orgánicos de efecto de campo basados en imida/diimida y un método de producción de estos
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
EP1986247A1 (en) 2005-05-12 2008-10-29 MERCK PATENT GmbH Polyacene and semiconductor Formulation
TW200703664A (en) * 2005-05-31 2007-01-16 Nat University Iwate Univ Inc Organic thin film transistor
WO2007010425A1 (en) 2005-07-19 2007-01-25 Koninklijke Philips Electronics N.V. Fluid analyser
KR101209046B1 (ko) * 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
US7781757B2 (en) 2005-08-24 2010-08-24 Sanyo Electric Co., Ltd. Organic semiconductor material, organic semiconductor element and field effect transistor using the same
TWI261361B (en) * 2005-08-31 2006-09-01 Ind Tech Res Inst Organic thin-film transistor structure and method for fabricating the same is provided
WO2007029971A1 (en) * 2005-09-07 2007-03-15 Iferro Co., Ltd. Method of forming organic layer on semiconductor substrate
US20070075308A1 (en) * 2005-09-30 2007-04-05 Florian Dotz Active semiconductor devices
US7488834B2 (en) 2005-09-30 2009-02-10 Alcatel-Lucent Usa Inc. Organic semiconductors
US7569415B2 (en) 2005-09-30 2009-08-04 Alcatel-Lucent Usa Inc. Liquid phase fabrication of active devices including organic semiconductors
CN100511751C (zh) * 2005-10-17 2009-07-08 中国科学院化学研究所 一种有机场效应晶体管及其制备方法
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
DE102005059608B4 (de) * 2005-12-12 2009-04-02 Polyic Gmbh & Co. Kg Organisches elektronisches Bauelement mit verbesserter Spannungsstabilität und Verfahren zur Herstellung dazu
KR101213871B1 (ko) * 2005-12-15 2012-12-18 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US7425723B2 (en) * 2005-12-21 2008-09-16 Xerox Corporation Organic thin-film transistors
US7514710B2 (en) * 2005-12-28 2009-04-07 3M Innovative Properties Company Bottom gate thin film transistors
KR101225372B1 (ko) * 2005-12-29 2013-01-22 엘지디스플레이 주식회사 박막트랜지스터 및 그 제조방법과 그 박막트랜지스터를포함하는 평판 표시 장치
DE102006055067B4 (de) 2005-12-29 2017-04-20 Lg Display Co., Ltd. Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung
EP1974401A1 (en) 2006-01-21 2008-10-01 Merck Patent GmbH Electronic short channel device comprising an organic semiconductor formulation
EP1990838A4 (en) * 2006-02-27 2011-02-16 Murata Manufacturing Co FIELD EFFECT TRANSISTOR
TW200737520A (en) * 2006-03-17 2007-10-01 Univ Nat Chiao Tung Gate dielectric structure and an organic thin film transistor based thereon
DE112007000699T5 (de) 2006-05-12 2009-06-04 Merck Patent Gmbh Auf Indenofluorenpolymeren basierende organische Halbleitermaterialien
JP2007311377A (ja) * 2006-05-16 2007-11-29 Sony Corp 薄膜トランジスタの製造方法および薄膜トランジスタならびに表示装置
JP2007318025A (ja) * 2006-05-29 2007-12-06 Dainippon Printing Co Ltd 有機半導体素子、および、有機半導体素子の製造方法
JP5256583B2 (ja) * 2006-05-29 2013-08-07 大日本印刷株式会社 有機半導体素子、および、有機半導体素子の製造方法
US7919825B2 (en) * 2006-06-02 2011-04-05 Air Products And Chemicals, Inc. Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers
US20080161464A1 (en) * 2006-06-28 2008-07-03 Marks Tobin J Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
US7528448B2 (en) 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US8062824B2 (en) 2006-07-17 2011-11-22 E. I. Du Pont De Nemours And Company Thermally imageable dielectric layers, thermal transfer donors and receivers
US8308886B2 (en) 2006-07-17 2012-11-13 E I Du Pont De Nemours And Company Donor elements and processes for thermal transfer of nanoparticle layers
WO2008009343A1 (en) 2006-07-21 2008-01-24 Merck Patent Gmbh Copolymers of indenofluorene and thiophene
US20080224127A1 (en) * 2006-08-22 2008-09-18 Marks Tobin J Gate dielectric structures, organic semiconductors, thin film transistors and related methods
KR100794720B1 (ko) 2006-08-28 2008-01-21 경희대학교 산학협력단 유기 박막 트랜지스터 표시판 및 그 제조 방법
TW200830595A (en) * 2006-11-27 2008-07-16 Nat University Iwate Univ Inc Organic thin film transistor, organic composite electronic element, method for manufacturing such transistor and element, and display device and memory
ES2525040T3 (es) 2006-11-28 2014-12-16 Polyera Corporation Materiales dieléctricos basados en fotopolímero y métodos de preparación y uso de los mismos
EP1936712A1 (en) * 2006-12-23 2008-06-25 ETH Zürich Organic field-effect transistors with polymeric gate dielectric and method for making same
TWI323034B (en) * 2006-12-25 2010-04-01 Ind Tech Res Inst Electronic devices with hybrid high-k dielectric and fabrication methods thereof
JP5234533B2 (ja) * 2007-03-26 2013-07-10 国立大学法人九州大学 有機半導体素子およびその製造方法
GB2461670B (en) * 2007-04-25 2012-05-16 Merck Patent Gmbh Process for preparing an electronic device
GB0709093D0 (en) * 2007-05-11 2007-06-20 Plastic Logic Ltd Electronic device incorporating parylene within a dielectric bilayer
GB2450382B (en) * 2007-06-22 2009-09-09 Cambridge Display Tech Ltd Organic thin film transistors, organic light-emissive devices and organic light-emissive displays
WO2009013291A2 (en) * 2007-07-25 2009-01-29 Basf Se Field effect elements
FR2919521B1 (fr) 2007-08-01 2012-03-09 Commissariat Energie Atomique Couche d'accroche sur des polymeres fluores
TWI345671B (en) * 2007-08-10 2011-07-21 Au Optronics Corp Thin film transistor, pixel structure and liquid crystal display panel
KR20090065254A (ko) * 2007-12-17 2009-06-22 한국전자통신연구원 광반응성 유기고분자 게이트 절연막 조성물 및 이를 이용한유기 박막 트랜지스터
US7994495B2 (en) * 2008-01-16 2011-08-09 Xerox Corporation Organic thin film transistors
JP2009224689A (ja) * 2008-03-18 2009-10-01 Sanyo Electric Co Ltd 有機トランジスタ及びその製造方法
PT103999B (pt) * 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
GB2458940B (en) 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
WO2009129912A1 (en) * 2008-04-24 2009-10-29 Merck Patent Gmbh Electronic device
FR2934714B1 (fr) * 2008-07-31 2010-12-17 Commissariat Energie Atomique Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor.
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
EP2315793B1 (en) 2008-08-18 2013-08-21 Merck Patent GmbH Indacenodithiophene and indacenodiselenophene polymers and their use as organic semiconductors
JP2010062276A (ja) * 2008-09-03 2010-03-18 Brother Ind Ltd 酸化物薄膜トランジスタ、及びその製造方法
CN102159618B (zh) 2008-09-19 2014-11-12 默克专利股份有限公司 衍生自苯并双(噻咯并噻吩)的聚合物和它们作为有机半导体的应用
WO2010031479A1 (en) 2008-09-19 2010-03-25 Merck Patent Gmbh Polymers derived from bis(thienocyclopenta)benzothiadiazole and their use as organic semiconductors
JP5449736B2 (ja) * 2008-10-09 2014-03-19 株式会社日立製作所 ボトムゲート型有機薄膜トランジスタ及びその製造方法
JP2010093093A (ja) * 2008-10-09 2010-04-22 Hitachi Ltd 半導体装置およびその製造方法
JP5583133B2 (ja) 2008-10-31 2014-09-03 ビーエーエスエフ ソシエタス・ヨーロピア 有機電界効果トランジスタに使用するためのジケトピロロピロールポリマー
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
JP2010163521A (ja) 2009-01-14 2010-07-29 Sumitomo Chemical Co Ltd 絶縁層用樹脂組成物
FR2945669B1 (fr) * 2009-05-14 2011-12-30 Commissariat Energie Atomique Transistor organique a effet de champ
US8853820B2 (en) 2009-05-25 2014-10-07 Basf Se Crosslinkable dielectrics and methods of preparation and use thereof
CN102449023B (zh) * 2009-05-27 2015-10-07 巴斯夫欧洲公司 多环联噻吩
WO2010136353A1 (en) 2009-05-27 2010-12-02 Basf Se Diketopyrrolopyrrole polymers for use in organic semiconductor devices
JP5458669B2 (ja) * 2009-05-28 2014-04-02 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器
EP2277944A3 (en) * 2009-07-24 2012-01-04 Electronics and Telecommunications Research Institute Composition for organic dielectric and organic thin film transistor formed using the same
GB2474827A (en) * 2009-08-04 2011-05-04 Cambridge Display Tech Ltd Surface modification
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
TWI384616B (zh) * 2009-09-11 2013-02-01 Univ Nat Cheng Kung 具備有機多介電層之記憶體元件
US8164089B2 (en) 2009-10-08 2012-04-24 Xerox Corporation Electronic device
KR20120120226A (ko) * 2009-12-17 2012-11-01 메르크 파텐트 게엠베하 나노입자의 침착
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
JP2011187626A (ja) * 2010-03-08 2011-09-22 Sony Corp 薄膜トランジスタおよび電子機器
JP5605610B2 (ja) * 2010-04-23 2014-10-15 セイコーエプソン株式会社 有機トランジスタの製造方法
EP2571919B1 (en) 2010-05-19 2018-07-11 Basf Se Diketopyrrolopyrrole polymers for use in organic semiconductor devices
JP5659568B2 (ja) * 2010-06-11 2015-01-28 富士ゼロックス株式会社 電界効果型有機トランジスタ
TW201213345A (en) * 2010-06-17 2012-04-01 Sumitomo Chemical Co Optical-energy crosslinkable organic thin film transistor insulation layer material, overcoat insulation layer and organic thin film transistor
CN102959753B (zh) 2010-06-24 2017-10-31 巴斯夫欧洲公司 具有改进开/关电流比和可控阈移的有机场效应晶体管
JP2013543251A (ja) 2010-07-30 2013-11-28 ビーエーエスエフ ソシエタス・ヨーロピア プリンテッドエレクトロニクスにおける両親媒性タンパク質
WO2012017005A2 (en) 2010-08-05 2012-02-09 Basf Se Polymers based on benzodiones
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
JP5890633B2 (ja) * 2010-08-30 2016-03-22 住友化学株式会社 有機薄膜トランジスタ絶縁層用組成物及び有機薄膜トランジスタ
KR101842735B1 (ko) * 2010-09-02 2018-03-27 메르크 파텐트 게엠베하 전자 디바이스용 게이트 절연체 층
KR20130114120A (ko) 2010-09-02 2013-10-16 메르크 파텐트 게엠베하 전자 디바이스용 중간층
RU2012134704A (ru) * 2010-09-07 2014-10-20 Ниппон Каяку Кабушики Каиша Органический полупроводниковый материал, органический полупроводниковый состав, органическая тонкая пленка, полевой транзистор и способ их получения
WO2012048048A1 (en) * 2010-10-07 2012-04-12 Georgia Tech Research Corporation Field-effect transistor and manufacturing process thereof
GB201105482D0 (en) 2011-03-31 2011-05-18 Imp Innovations Ltd Polymers
GB201108865D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Semiconductor compounds
GB201108864D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Transistors and methods of making them
ES2717633T3 (es) 2011-08-03 2019-06-24 Univ Degli Studi Cagliari Procedimiento de fabricación de transistor orgánico de baja tensión
FR2980040B1 (fr) * 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor organique a effet de champ
FR2980041B1 (fr) 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor a effet de champ comprenant un limiteur de courant de fuite
KR102030860B1 (ko) 2011-10-04 2019-11-08 바스프 에스이 벤조디온 기재 중합체
EP2780409A4 (en) 2011-11-15 2015-09-16 Basf Se ORGANIC SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
CN103975454B (zh) 2011-12-07 2018-02-09 巴斯夫欧洲公司 用于有机半导体器件的二酮基吡咯并吡咯聚合物
WO2013083507A1 (en) 2011-12-07 2013-06-13 Basf Se An organic field effect transistor
PL397479A1 (pl) 2011-12-21 2013-06-24 Instytut Chemii Organicznej Polskiej Akademii Nauk Nowe, fluorescencyjne barwniki heterocykliczne i sposób ich otrzymywania
EP2834284B1 (en) 2012-04-02 2017-05-10 Basf Se Phenanthro[9,10-b]furan polymers and small molecules for electronic applications
TWI500162B (zh) * 2012-04-03 2015-09-11 E Ink Holdings Inc 薄膜電晶體及其製造方法
CN103367458B (zh) * 2012-04-03 2017-03-01 元太科技工业股份有限公司 薄膜晶体管及其制造方法
JP6395702B2 (ja) 2012-04-04 2018-09-26 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ジケトピロロピロールポリマーおよび小分子
KR102082019B1 (ko) 2012-04-25 2020-04-14 메르크 파텐트 게엠베하 유기 전자 소자용 뱅크 구조체
WO2014008971A1 (en) 2012-07-13 2014-01-16 Merck Patent Gmbh Organic electronic device comprising an organic semiconductor formulation
WO2014016219A1 (en) 2012-07-23 2014-01-30 Basf Se Dithienobenzofuran polymers and small molecules for electronic application
EP2883254B1 (en) 2012-08-09 2018-10-24 Merck Patent GmbH Organic semiconducting device
KR20150051938A (ko) * 2012-08-31 2015-05-13 아사히 가라스 가부시키가이샤 경화성 조성물 및 경화막의 제조 방법
JP6036064B2 (ja) * 2012-09-13 2016-11-30 富士ゼロックス株式会社 有機半導体トランジスタ
EP2898551B1 (en) 2012-09-21 2020-04-22 Merck Patent GmbH Organic semiconductor formulations
EP2904648B1 (en) 2012-10-04 2016-09-21 Merck Patent GmbH Passivation layers for organic electronic devices
US9748487B2 (en) 2012-11-07 2017-08-29 Basf Se Polymers based on naphthodiones
EP2928940B1 (en) 2012-12-04 2021-03-03 CLAP Co., Ltd. Functionalized benzodithiophene polymers for electronic application
KR102173448B1 (ko) 2013-05-06 2020-11-04 주식회사 클랩 유기 전자 응용품 내의 유전체로서의 가용성 시클릭 이미드 함유 중합체
JP6191235B2 (ja) * 2013-05-20 2017-09-06 富士電機株式会社 有機トランジスタ及びその製造方法
WO2014206863A1 (en) 2013-06-24 2014-12-31 Basf Se Polymers based on fused diketopyrrolopyrroles
EP2818493A1 (en) 2013-06-25 2014-12-31 Basf Se Near infrared absorbing polymers for electronic applications
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
TWI628719B (zh) * 2013-11-21 2018-07-01 尼康股份有限公司 電晶體之製造方法及電晶體
US9330809B2 (en) 2013-12-17 2016-05-03 Dow Global Technologies Llc Electrically conducting composites, methods of manufacture thereof and articles comprising the same
US9336921B2 (en) 2013-12-17 2016-05-10 Dow Global Technologies Llc Electrically conducting composites, methods of manufacture thereof and articles comprising the same
US9958778B2 (en) 2014-02-07 2018-05-01 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
GB2534600A (en) * 2015-01-29 2016-08-03 Cambridge Display Tech Ltd Organic thin film transistors
WO2017068009A1 (en) 2015-10-21 2017-04-27 Basf Se Polymers and compounds based on dipyrrolo[1,2-b:1',2'-g][2,6]naphthyridine-5,11-dione
CN105404046B (zh) * 2015-12-04 2018-06-01 深圳市华星光电技术有限公司 量子点彩膜基板的制作方法
DE102016104254A1 (de) * 2016-03-09 2017-10-26 Friedrich-Schiller-Universität Jena Verfahren zur Herstellung einer halbleitenden Folie und elektronisches Bauelement
CN109153772B (zh) 2016-05-25 2022-05-03 Clap有限公司 半导体
TW201832012A (zh) * 2017-01-20 2018-09-01 日商富士軟片股份有限公司 保護層形成用組成物、積層體及套組
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices
CN109088000B (zh) * 2018-08-22 2022-04-12 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法
DE102019200810B4 (de) 2019-01-23 2023-12-07 Technische Universität Dresden Organischer dünnschicht-transistor und verfahren zur herstellung desselben
GB2600317B (en) * 2019-06-24 2024-02-14 Flexenable Tech Limited Modification of stress response and adhesion behavior of dielectric through tuning of mechanical properties
GB201919031D0 (en) 2019-12-20 2020-02-05 Smartkem Ltd Sputter protective layer for organic electronic devices
US12096641B2 (en) * 2020-06-03 2024-09-17 Purdue Research Foundation Polyimide-based transistor devices and methods of fabricating the same
CN113299831B (zh) * 2021-05-21 2023-03-24 西安电子科技大学 基于三层绝缘介质的低功耗柔性薄膜晶体管及其制作方法
CN113410385A (zh) * 2021-06-15 2021-09-17 南方科技大学 一种低压浮栅光电存储器及制备方法
CN116234326B (zh) * 2023-03-30 2026-03-27 南京邮电大学 一种基于氟化聚合物电介质的有机场效应晶体管制备方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565860A (en) 1984-04-09 1986-01-21 Nissan Motor Co., Ltd. Polymer of triphenylamine
DE3751502T2 (de) * 1986-03-11 1996-02-15 Kanegafuchi Chemical Ind Elektrische oder elektronische Anordnung mit einer dünnen Schicht aus Polyimid.
DE3610649A1 (de) 1986-03-29 1987-10-01 Basf Ag Polymere mit triphenylamineinheiten
JP2651691B2 (ja) * 1988-03-03 1997-09-10 バンドー化学株式会社 新規な芳香族アミン化合物
JP2533943B2 (ja) 1989-08-01 1996-09-11 キヤノン株式会社 電子写真感光体の製造法
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5556706A (en) 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
JPH07221367A (ja) 1994-01-31 1995-08-18 Matsushita Electric Ind Co Ltd 配向積層膜とその製造方法及びそれを用いた有機電子素子とその製造方法
GB9403503D0 (en) 1994-02-24 1994-04-13 Inmos Ltd Memory cell
JP2725591B2 (ja) * 1994-03-10 1998-03-11 日本電気株式会社 電界効果型トランジスタ
US5681664A (en) 1994-08-04 1997-10-28 Toyo Ink Manufacturing Co., Ltd. Hole-transporting material and use thereof
US5677096A (en) 1995-09-19 1997-10-14 Ricoh Company, Ltd. Electrophotographic photoconductor
EP0765106B1 (en) 1995-09-25 2002-11-27 Toyo Ink Manufacturing Co., Ltd. Light-emitting material for organic electroluminescence device, and organic electroluminescence device for which the light-emitting material is adapted
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
WO1997033193A2 (en) 1996-02-23 1997-09-12 The Dow Chemical Company Cross-linkable or chain extendable polyarylpolyamines and films thereof
DE19712233C2 (de) * 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
US5612228A (en) 1996-04-24 1997-03-18 Motorola Method of making CMOS with organic and inorganic semiconducting region
US6188452B1 (en) 1996-07-09 2001-02-13 Lg Electronics, Inc Active matrix liquid crystal display and method of manufacturing same
US5728801A (en) 1996-08-13 1998-03-17 The Dow Chemical Company Poly (arylamines) and films thereof
US5981970A (en) 1997-03-25 1999-11-09 International Business Machines Corporation Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
JPH10335671A (ja) * 1997-06-02 1998-12-18 Sharp Corp ドライバーモノリシック駆動素子
US5879821A (en) 1997-11-13 1999-03-09 Xerox Corporation Electroluminescent polymer compositions and processes thereof
GB9726810D0 (en) 1997-12-19 1998-02-18 Zeneca Ltd Compounds composition & use
WO2000078843A1 (en) 1997-12-19 2000-12-28 Avecia Limited Process for the isolation of polymer fractions
JP4743968B2 (ja) 1999-01-15 2011-08-10 住友化学株式会社 半導体ポリマー電界効果トランジスタ
US6207472B1 (en) 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
JP2000275678A (ja) * 1999-03-26 2000-10-06 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
WO2000079617A1 (en) * 1999-06-21 2000-12-28 Cambridge University Technical Services Limited Aligned polymers for an organic tft
EP1138091B1 (en) * 1999-09-10 2007-01-17 Koninklijke Philips Electronics N.V. Conductive structure based on poly-3,4-alkenedioxythiophene (pedot) and polystyrenesulfonic acid (pss)
JP2001094107A (ja) * 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
CN100483774C (zh) 1999-12-21 2009-04-29 造型逻辑有限公司 半导体器件及其形成方法
GB0028867D0 (en) * 2000-11-28 2001-01-10 Avecia Ltd Field effect translators,methods for the manufacture thereof and materials therefor
WO2003030278A2 (en) 2001-10-01 2003-04-10 Koninklijke Philips Electronics N.V. Composition, method and electronic device
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
CN1157807C (zh) 2001-11-09 2004-07-14 清华大学 一种有机薄膜场效应晶体管及其制备方法
US6912473B2 (en) * 2002-06-28 2005-06-28 International Business Machines Corporation Method for verifying cross-sections

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EP1459392B1 (en) 2011-09-21
US20050104058A1 (en) 2005-05-19
JP2005513788A (ja) 2005-05-12
JP2011243986A (ja) 2011-12-01
JP2011254075A (ja) 2011-12-15
CA2469912A1 (en) 2003-06-26
JP5727293B2 (ja) 2015-06-03
KR100949304B1 (ko) 2010-03-23
WO2003052841A1 (en) 2003-06-26
EP2207217A1 (en) 2010-07-14
JP5727294B2 (ja) 2015-06-03
NO20043049L (no) 2004-07-15
KR20040063176A (ko) 2004-07-12
US7029945B2 (en) 2006-04-18
EP2204861A1 (en) 2010-07-07

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