TW200830595A - Organic thin film transistor, organic composite electronic element, method for manufacturing such transistor and element, and display device and memory - Google Patents

Abstract

An organic thin film transistor is provided with a gate electrode (18), a gate insulating film (17), an organic semiconductor film (16), a drain electrode (14) and a source electrode (15) on a substrate (11). The gate insulating film (17) has a double layer structure of a low dielectric constant film (17a) and a ferroelectric film (17b). The low dielectric constant film (17a) is arranged between the ferroelectric film (17b) and the organic semiconductor film (16), and the low dielectric constant film (17a) includes an organic polymeric compound which does not have a functional group that has an unshared electron pair nor π electron coupling within the molecular structure.

Description

[Technical Field] The present invention relates to an organic thin film transistor, a method of producing the organic thin film transistor, and a display device such as an organic EL display device including the organic thin film transistor. Further, the present invention relates to an organic composite electronic component including an organic thin film transistor and a high dielectric capacitor, a method of manufacturing the organic composite electronic component, and an organic semiconductor memory using the organic composite electronic component. Furthermore, the present invention relates to an organic composite electronic component including an organic thin film transistor having a different performance, a method for producing the organic composite electronic component, and a ferroelectric memory using the organic composite electronic component. . [Prior Art] The organic thin film transistor is, for example, a structure having a laminated substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode, an organic semiconductor film, and a protective film. The organic thin film transistor can be obtained by a printing method which is equivalent to a low-cost process at normal temperature and normal pressure, and has good adaptability to a flexible substrate. Active film, organic thin film transistor, is expected to be used in liquid crystal display devices, organic electroluminescence (EL) display devices, electrophoretic display devices and other flat-panel display image drive components, or expected to be used in thin-film displays, electronic paper' Electronic price tag. Electronic circuit (4) such as electronic goods, integrated circuit technology of electronic equipment such as biosensor. The characteristics of the transistor are considered to increase the mobility of the organic semiconductor known to enhance the mobility of the organic semiconductor channel layer thus expected. 22 4 6-92 63-PF; Ahddub 5 200830595 Furnace. , The rate h is..., the material of the gate insulating film changes, and the material for organic gate insulating film is developed. For example, the organic thin film transistor disclosed in Japanese Patent Publication No. Hei 5-508745 and the Japanese Patent No. 5347144 discloses that a large drain current is required to make the capacitance per unit area of the gate insulating film large. Therefore, a polymer having a high dielectric constant and a high dielectric constant with a relative dielectric constant of 5 (cyanoethyl pullulan, etc.) is used for the gate insulating film. The relative dielectric constant of the cyanoethyl-Pluron was 18.5. Further, Japanese Laid-Open Patent Publication No. 2004-179542 discloses a polyacrylonitrile having a cyano group as an organic gate insulating material. The relative dielectric constant of the polyacrylonitrile is 4.5. In addition, as a gate insulating film, JP-A-2004-1 79542 proposes polyimine, polystyrene, polymethyl methacrylate, polyvinyl chloride, polyvinyl alcohol, and parylene. Polyvinylidene fluoride, polyethylene, pullulan, poly(p-dimethylbenzene) and other polymers and derivatives thereof. Japanese Patent Laid-Open No. Hei 8-191162, _A, proceeds to a more effective field effect proposal using a composite material in which a material having a higher dielectric constant is mixed. However, if the organic material does not greatly ensure the film thickness, it will leak current in the gate of the insulating film due to the phenomenon of piercing, and the insulating property cannot be maintained, and the excellent characteristics can be achieved stably and cannot be realized. High insulation film capacity, and it is difficult to operate at low gate voltage. Further, an electronic component such as an organic thin film transistor or an organic ferroelectric capacitor can be obtained by a low-cost process which is often at a lower temperature than that of an electronic component previously using an inorganic material, and a material such as a substrate. 2246-9263-PF/Ahddub 6 200830595 Reasons for restricting, etc., recently applied to the planar display or ferroelectric memory of the organic FT _ ^ mEL display (FeRA1^ rroelectric Random

Access Meniory) and so on. When a circuit is formed on a substrate using a plurality of shackles, the same electronic component can be manufactured in the same process. However, for example, when a plurality of kinds of organic thin film transistors having different insulating film capacities are formed on a substrate, or when an organic thin film transistor and an organic capacitor are formed on a substrate, when forming an electronic component of a different kind Since the dielectric constant of the dielectric of φ _ or the characteristics of the required element is different, the current state is produced by a dissimilar process (film formation step). Therefore, there are many manufacturing processes, and there is a case where the cost of the organic composite electronic component is reduced. In the prior art for forming a different type of electronic component on a substrate, for example, a method of manufacturing a ferroelectric memory including an organic thin film transistor and a ferroelectric capacitor is proposed (Japanese Laid-Open Patent Publication No. 2006-245185). A method of forming a ferroelectric film and an electrode for a capacitor on an electrode after forming an organic thin film transistor on a substrate is disclosed. In this method, although it is possible to make the drawing (4) easy to manufacture, there is still a problem in that the ferroelectric film and the electrode for the capacitor are formed separately after the crystal is formed. SUMMARY OF THE INVENTION A first object of the present invention is to provide an organic thin film transistor which can reduce a leakage current of a gate insulating film and which can have a high insulating film capacity, can operate at a low gate voltage, a method for producing the same, and a method for using the same A display device for an organic thin film transistor. ^ 224 6~92 63-PF; Ahddub 7 200830595 The second objective of this month is to simplify the manufacturing steps of organic composite electronic components including organic thin film transistors and high dielectric capacitors. A third object of the present invention is to simplify the manufacturing process including an organic composite electronic component having an organic thin film transistor having a different performance < 2 or more. In order to achieve the above-mentioned object, the present inventors have studied the results of various organic closed-electrode insulating film materials used in organic thin film transistors, and found electron pairs of functional groups present in molecular structures, benzene rings, and the like. As a result of the in-depth study of the influence of the electrons on the leakage current, it was found that the use of an organic polymer compound having no functional group of a non-covalent electron pair and having no α I bond in the molecular structure forms a low dielectric film. By laminating the low dielectric film and the ferroelectric film to form a gate insulating film, the gate film of the gate (four) is made into a film of the acupuncture, and the leakage current of the gate insulating film is suppressed. The high insulating film capacity 'is an organic thin film transistor that can operate at a low gate voltage. The present inventors have arrived at the completion of the present invention based on this knowledge. According to a first aspect of the present invention, there is provided an organic thin film transistor which is bonded to a substrate, comprising: a closed electrode, a interlayer insulating film, an organic semiconductor film, a source electrode, and a electrodeless electrode, the gate The pole insulating film is mounted on the ferroelectric film, and the low dielectric film having a low dielectric constant compared to the ferroelectric film between the ferroelectric film and the organic semiconductor film, the above dielectric body The film 'containing a thin film transistor having no functional group having a non-covalent electron pair and an organic polymer compound which is 胄-electron-bonded in the knives. A method for producing an organic thin film transistor, comprising: 2246-9263-PF; Ahddub 8 200830595, a first step of forming a gate electrode on a substrate; & forming a ferroelectric on the substrate including the gate electrode a second step of the bulk film; a third step of forming a low dielectric film having a lower dielectric constant than the ferroelectric film on the ferroelectric film; forming an organic semiconductor film on the low dielectric film 4 steps; and forming a source electrode and a electrodeless electrode on the organic semiconductor film, the fifth step 'the third step' is to have no functional group having a non-covalent electron pair and no κ t in the molecular structure The sub-bonded organic polymer compound is dissolved in a solvent to obtain a solution; and after the solution is cast, the solution is removed, and a display device comprising the above organic thin film transistor is provided.

The organic thin film transistor of the present invention suppresses the leakage current in the (tetra) insulating film to achieve excellent stability, and can operate at a low gate voltage. The method for producing the organic thin film transistor of the present invention can be manufactured with stability. It can obtain a high dielectric dielectric capacity and an organic thin film transistor that can operate at a low interpole voltage. The organic crystal display device and the organic EL of the present invention are used as the liquid crystal display device (the electro-acoustic display device, the image driving device for the flat display of the electrophoretic display I.), the device, the electronic paper, the electronic 俨Di ή •, 不 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子Since the dust operation is invented, it is suitable for, for example, an organic EL 亍 quot 彝Ή 彝Ή 彝Ή 彝Ή 彝Ή 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 。 The organic composite electronic component aa including the Rayleigh capacitor on the substrate comprises: 2246-9263-PF; Ahddub 9 200830595, the first electrode group for the transistor and the first electrode of the first electrode group for the capacitor a group forming step; a ferroelectric film forming step of forming a ferroelectric film; and a low dielectric film forming step of forming a low dielectric film having a lower dielectric constant than the ferroelectric film, in addition to forming the capacitor ,contain Forming an organic semiconductor film forming portion of the organic semiconductor film in the portion of the transistor; at least the ferroelectric film and the low dielectric film and the first electrode group for the transistor form a transistor in a predetermined positional relationship In the second electrode group, a second electrode group forming step is formed in which the ferroelectric film is interposed between the first electrode group and the second electrode group for the capacitor. The electrode group is referred to here. 1 or 2 or more electrodes. The so-called predetermined positional relationship ' is a relationship in which the electrodes are arranged to form a position of a transistor. In the present invention, a ferroelectric body for a ferroelectric film for a transistor and a capacitor is used. The film is formed in the same forming step, and the electrode group for the transistor is formed in the same forming step as the group of electrodes for the electric grid, so that it can be provided with a transistor and a capacitor in comparison with the prior art formed by different forming steps, respectively. The organic composite electronic component is manufactured with a small number of operations, and the manufacturing cost can be reduced. Further, since the insulating film (gate insulating film) of the transistor is laminated, the ferroelectric body is laminated. Since the film is formed with a low dielectric film, the dielectric constant of the insulating film formed of the ferroelectric film and the low dielectric film can be set to be desired by appropriately selecting the dielectric constant of the low dielectric film. The value, and can operate at a low gate voltage, may form a transistor having good characteristics with small hysteresis. Thus, according to the present invention, an organic composite electron having an organic thin film transistor and a south dielectric capacitor can be used. In particular, the organic composite electronic component manufactured by the present invention can be suitably used, for example, 224 6-9263-PF; Ahddub 10 200830595 • For the manufacture of signal circuits for wireless transmission tags, etc. According to a third aspect of the present invention, a method of manufacturing an organic composite electronic component according to a third aspect of the present invention, is directed to a method of manufacturing an organic composite electronic component including an i-th transistor and a second transistor on a substrate, comprising: forming a first The first electrode group for the transistor and the second transistor are used for the first! Electrode, 苐1 electrode group forming step, ferroelectric film forming step of forming a ferroelectric film, except for forming a portion of the second transistor, including a portion forming the _1 1 transistor, and forming a ferroelectric film Low dielectric film forming step of low dielectric constant low dielectric film; organic half V body film forming step of forming organic semiconductor film; at least sandwiching said ferroelectric film and said low dielectric film and said (1) The second electrode group for the first transistor is formed in a predetermined positional relationship by the first electrode group for the transistor, and at least the first ferroelectric film f is interposed therebetween, and the first electrode group of the 帛2 transistor is formed in a predetermined positional relationship. The second electrode group forming step of the second electrode group of the week. Here, the electrode group is fastened to one or two or more electrodes. Further, the predetermined positional relationship is such that the respective electrodes are arranged to constitute the position of the transistor. In the present invention, the ferroelectric film for the first transistor and the ferroelectric film for the second transistor are formed in the same formation step, and the electrode group for the i-th transistor and the electrode group for the second transistor are formed. The formation is performed in the same formation step, so that the organic composite electronic component having two types of transistors can be manufactured with a smaller number of operations than the prior art formed by the different formation steps, and the manufacturing cost can be reduced. Further, in the second transistor, a gate insulating film having two layers of a ferroelectric film and a low=electric film is formed, so that the ferroelectricity can be selected by appropriately selecting the dielectric constant of the low electric body film. The dielectric film and the low dielectric film constitute 2246-9263-PF; Ahddub 11 200830595 之. The dielectric constant of the insulating film is set to a desired value, and the low gate voltage action may have a small lag. Organic thin film transistor with good characteristics. Further, in the second transistor, a gate insulating film is formed of a ferroelectric film, for example, an organic thin film transistor which can be used for a ferroelectric memory can be obtained. According to the present invention, it is possible to facilitate the production of an organic composite electronic component including two or more organic thin film transistors having different performances from each other. [Embodiment] (1) The first embodiment is hereinafter described as a first embodiment. An organic thin film transistor corresponding to the first aspect of the present invention described above, a method for producing the same, and a display device will be described. " (1 -1) Organic Thin Film Transistor The organic thin film transistor of the present embodiment is mounted on a substrate including a semiconductor film, a gate electrode, a source electrode, a gate electrode, and a mes It is composed of an insulating film. The gate insulating film is formed by laminating a low dielectric constant low dielectric film and a ferroelectric film having a high dielectric constant of the low dielectric film into a two-layer structure. The organic thin film transistor can be broadly divided into: a gate electrode having a source electrode and a electrodeless electrode connected to the organic semiconductor film, a gate electrode having a closed electrode via the interlayer insulating film; and a gate electrode The upper via insulating film has a bottom gate type in which a source electrode and a drain electrode are connected by an organic semiconductor film. The organic thin film electric sputum of the present invention can be used, which can be _polar type, 2246-9263-PF; Ahddub 12 200830595 讅. It can also be the bottom gate type, but to avoid the source electrode and the bungee The viewpoint that the formation of the electrode causes damage to the organic semiconductor film is preferably a bottom gate type. Figure la is a top gate. Stacked type (T〇p Gate stagger t 邝 之 有机 organic thin film transistor. The organic thin film transistor shown in Figure a, has a primer layer 12 on the substrate 11. The underlayer 12 contains a compound selected from a polymer, or an inorganic oxide and an inorganic nitride. The organic semiconductor film 16, the drain electrode 14 and the source electrode are provided on the underlayer 12. On the organic semiconductor film i 6 ' The pad electrode 18 is provided via the gate insulating film i 7. The gate insulating film 17 is formed by laminating a low dielectric film 17 & and a ferroelectric film 17b. The low dielectric film 17a is a dielectric layer. Between the organic semiconductor film 16 and the ferroelectric film 17b, a protective film (sealing film) 23 is provided as the outermost layer. Fig. 1b shows the top of the stacking order of the exchanged drain electrode and the source electrode and the organic semiconductor film. Gate. Coplanar type (T〇p Gate c〇p丨 catching type) structure. Figure 2a is the bottom gate and stack type (B〇tt〇ffi Gatetype) • The structure of the organic thin film transistor The organic thin film transistor shown in Fig. 2a has a primer layer 12 on the substrate 11. The compound is selected from the group consisting of the same molecule or an inorganic oxide and an inorganic nitride. The underlayer 12 is provided, and the organic semiconductor film 16 is provided via the gate electrode 18 and the gate insulating film 17. The gate insulating film i7 is The low dielectric film 7a is laminated with the ferroelectric film 17b. The low dielectric film 17a is interposed and disposed between the organic semiconductor film 16 and the ferroelectric film 17b. Further connected to the organic semiconductor film 16. A drain electrode 14 and a source electrode 15 are provided. The rib is a bottom gate of the exchanged drain electrode and the source electrode and the organic semiconductor film. 224 6-9263-PF; Ahddub 13 200830595 Structure of Bottom Gate Coplanar type (1 - 2) Organic semiconductor film and its formation step An organic semiconductor material is used for the formation of the organic semiconductor film. As the organic semiconductor material, a conjugated material is used. Examples of the yoke material include polypyrroles such as polypyrrole, anthracene (fluorene-substituted pyrrole), poly(3-substituted pyrrole), poly(3,4-dipyridylpyrrole), polythiophene, and poly(3-substituted). Thiophene), poly(3,4-disubstituted phenotype), polyphenylene Polythiophenes such as thiophene; polyisoazole ring-burning such as poly-iso-salt ring; polysodium vinyl such as poly(ethylene); poly(p-styrene) such as poly(p-styrene); polyaniline Polyaniline such as poly(anthracene-substituted aniline), poly(3-substituted aniline), poly(2,3-substituted aniline); polyacetylene such as polyethylidene; polydiacetylene such as polydiacetylene Polycyanine blues such as polyglycoside blue; polyfluorenes such as polyfluorene; polycarbazoles such as polycarbazole and poly(fluorene-substituted carbazole); poly seleniums such as polyselenophene; Polyurethanes such as polyfuran and polybenzopyrene; poly(p-phenylene)-like poly(p-phenylene)-like polyfluorenes; polypyrazines and the like Calling class; Ding province, _ 戊 province, province, Geng province, diphenylbenzene province, tetrabenzidine, bismuth, bismuth, bismuth (c〇ronene), pentacene (terrylene) a polyacene such as ovalene, Quaterrylene, or circummanthracene; and a part of a carbon of a polyacene type such as an atom such as N, S or 0, a carbonyl group or the like. Functional group substitution a polymer such as a derivative (diphenoxyoxazine, triphenyldiazine, hexene-6, 15 fluorene, etc.), polyvinyl carbazole, polyphenylene sulfide, polyethylene sulfide, or the like A polycyclic condensate or the like described in JP-A No. 1-1 95790. And 'has the same repetitive unit as these polymers, such as thiophene 2246-9263-PF; Ahddub 14 200830595 6 quantity of a-six flat side \ %, α, ω _ dihexyl-α - hexameric porphin An oligomer of α,ω,hexyl α-pentathiophene, α,ω-bis(3-butoxypropyl)-α-, polythiophene, styrylbenzene derivative or the like. Further, a steel phthalocyanine or a metal phthalocyanine such as fluorine-substituted copper phthalocyanine described in Japanese Patent Laid-Open No. 251601; #1,4,5,8-tetracarboxylic acid diimine, Νμ, μ,, '(4-difluoromethylbenzyl)naphthalene 1,4, 5, 8-tetrazolium diamine, Ν μ, ^ / -i N'N - bis (1H, 1H -Perfluorooctyl)naphthalenetetracarboxylic acid diimine, NM, ^., τ Ν'Ν _ bis (ιη, ιη-perfluorobutyl) naphthalene tetracarboxylic acid imine and N, N, dioctyl # u,5,8_tetradecanoic acid diterpene ^ 乂一, ' 6, 7 tetracarboxylic acid diimine and the like naphthalene tetradecanoic acid diimine imine ^, 3' 6' 7 tetracarboxylic acid diterpenoid a condensed cyclic tetracarboxylic acid diimine imine such as an imine tetracarboxylic acid such as an imide; a fullerene such as C60, C70, C76, C78 or C84; or a naphthalene carbon tube such as sm; Pigments such as cyanine and cyanine pigments. /' , , among the π total (four) materials, selected from the group consisting of porphin, styrene, styrene, p-phenylene, and at least these substituents! An oligomer having a number of 4 4 to 1 G and a polymer having a number η of 20 or more, and a polymer having a number η of 20 or more, a condensed polycyclic aromatic compound such as pentacene; a fullerene; At least one of the group consisting of a ring of tetrakis(tetra)imine and a group of metal ugly phthalocyanines is preferred. Further, other organic semiconductor materials include tetrathio-rich (TTF)-tetracyano-based dimethyl sulphide (TCNQ) complex, and double-edulphate tetrathio-rich (BEDTTTF)-perchloric acid complex. An organic molecular complex of BEDTTTF-iodine complex, pore (10)-iodine complex, and the like. In addition, 钱 224 6-9263-PF, such as polytetrahydrogen, etc.; Ahddub 15 200830595 is an organic/inorganic hybrid material which is contained in Japanese Unexamined Patent Publication No. 2(10)〇1. The organic semiconductor film may also contain JJ 3, for example, a material having a functional group such as acrylic acid, acetamide, dimethylamino group, and a functional group such as #贫. ^ fluorenyl nitro; 4. The material of the acceptor for accepting electrons; for example, having an amine group, a triphenyl group, an alkyl fluorenyl group, an alkoxy group, etc., such as 7►, knees, urethane, tetracyanoquinodimethane or the like. a material of a functional group such as a phenyl group; a substituted amine such as phenylene diene, etc., f, a benzoonium, a substituted benzox, a substituted ketone, a savory derivative thereof, a tetrathio-rich and A material for the donor of an electron donor such as a derivative. The film formation (forming) method of the organic semiconductor film may be a vacuum vaporization method, a molecular beam crystal growth method, a ion beam beam method, a low energy ion beam method, an ion clock method, a CVD method, a (10) method, or a plasma polymerization method. Method, electrolytic polymerization method, chemical polymerization method, spray coating method, spin coating method, doctor blade coating method, immersion coating method, casting method, roll coating method, bar coating method, die coating method, and LB method. The film thickness of the organic semiconductor film varies depending on the organic semiconductor material to be used, and is usually 1/zin or less, and more preferably 4 〇〇 (10) or more in thickness of a single molecular layer. (1-3) Electrode and forming step The electrodes (gate electrode, source electrode and electrodeless electrode) constituting the organic thin film transistor are made of a conductive material (4). Examples of the conductive material include platinum, gold, silver, nickel, road, copper, iron, tin, ruthenium, erroneous, sirloin, yttrium, yttrium, yttrium, yttrium, yttrium, yttrium, yttrium , tin oxide, recording, indium oxide, tin (I το), fluorine osmosis, rhetoric, carbon, stone black, t, glass, carbon, 2246-9263-PF; Ahddub 16 200830595 silver paste and carbon paste , lithium, , ^ attack town, potassium, calcium, recorded, titanium, turtle, cockroach, in 豕, sharp, face, know, 曰 sodium-potassium a gold, magnesium / steel mixture, magnesium / silver mixture, magnesium mash Magnesium/indium mixture, aluminum/aluminum oxide mixture, lithium/aluminum mixture. It is also known as a conductive polymer which enhances conductivity and is known, for example, a polyaniline, a conductive polypyrrole, a conductive polypene (a complex of a phenanthrene and a polystyrene). Sett's other materials are used to form the source electrode and the drain electrode. The above is the same as the above: • The contact surface resistance of the semiconductor film is preferably small, and the p-type semi-conductor: '纟别疋' platinum, Gold, silver, ruthenium 0, conductive polymer, and only the gate electrode, the source electrode, and the drain electrode, and the fluid electrode including the solution of the above-mentioned conductive material, paste, Gubao '^ knife liquid, etc. It is preferable to use a flowable electrode material containing a conductive polymer or a fine particle of platinum, gold, silver, or 5. The flow of metal fine particles as θ is as known as a conductive paste, etc. The electrode material can also be used in the case of (4), 4, preferably using metal particles having an average particle size of 1 to 5 〇nffl, 1 Onm, and a dispersion stabilizer, a knife placed in water or any organic solvent. The average particle diameter is hunted by the photon correlation method. As a material for metal particles, in addition to the above-mentioned platinum, gold, silver, steel, nickel, chrome, iron, tin, field lead, button, indium, palladium, pound, record,铱, aluminum, bismuth, antimony, molybdenum, tungsten, zinc, etc. As a method for producing such a metal microparticle, it can be exemplified by a gas strip method, a sputtering method, a metal tomb, a person, a milk The method of generating a metal granule by the method of physical formation such as the oral method, 17 224 6-.9263-PF, Ahddub 200830595, colloid method, co-precipitation method, etc. The α ^ I is a microparticle dispersion forming electrode, and after drying the solvent, the composition is required to be 100~30 (TC, preferably 150 to 20 (TC) in the range of TC, so that the whole metal cerium particles are heated. Thermal fusion bonding to form an electrode pattern having a desired shape. As a method of forming the electrode, the above-mentioned conductive material may be used as a raw material.

It is formed by money plating or vapor deposition to form a mine-guided M wind V electric film, and then a photoresist is formed.

After the case, the electrode pattern is removed by removing the unnecessary film by the rice meal; the metal mask is placed on the substrate to directly perform (4) or steaming, forming a metal mask method for the electrode pattern; a metal box of Yuming or copper A method of forming a photoresist by thermal transfer or ink jetting, etc.; and a conventional method of etching an unnecessary electrode to form an electrode pattern by etching. Further, a solution or dispersion containing a conductive polymer, a dispersion containing metal fine particles, or the like may be directly patterned by an inkjet method, or may be formed by lithography or laser peeling of a coating film. Further, a method of patterning a conductive ink or an electrically conductive paste containing a conductive polymer or metal fine particles by a printing method such as relief printing, gravure printing, lithography, screen printing or the like may be used. The thickness of the electrode is not particularly limited and is usually 20 to 50 Å, preferably 50 to 2 Å. (1 - 4) Insulating film and its formation step gate insulating film, which is a low-dielectric film having a relatively low dielectric constant and a relatively high dielectric constant ferroelectric dragon (sorghum electric body) Membrane) A two-layer membrane. However, in the present embodiment, the gate insulating film ' may be a film of a multilayer structure of two or more layers in a range in which the gate and the film of the two layers are not hindered from the object of the present invention. . In the organic film 2 2 4 6-92 6 3-PF; Ahddub 18 200830595 The transistor 'connects the low dielectric film to the right side respectively, and electrically shields the pancreas from the organic semiconductor film, so that the ferroelectric film is bonded to The gate electrode topography is preferred. The relative dielectric constant of the low dielectric film is usually set to a value of 4 or less, preferably set to a value of 3.5 or less, and more preferably set to a value of 3 or less. As the lower limit of the relative dielectric constant, it is usually 2 degrees. The film thickness of the low dielectric film is preferably 5 nm to 50 Å, which is more preferably 1 〇 nm to 3 〇〇 nffi. The relative dielectric constant of the ferroelectric film is usually set to a value of 5 or more, and it is preferable to set it to a value of 7 or more. As the upper limit of the phase "dielectric constant, it is usually 50 degrees. The film thickness of the ferroelectric film is preferably 5 nt 50 〇 nm, more preferably 10 nm 〜 3 〇〇 nm. The effective dielectric constant of the entire gate insulating film can be adjusted by appropriately setting the relative dielectric constant and film thickness of the low dielectric film, and the relative dielectric constant and film thickness of the ferroelectric film. As the film thickness of the entire gate insulating film for laminating the low dielectric film and the ferroelectric film, as long as the insulating layer can be used for any thickness, the spine can be preferably used in an amount of 10 to 500 nm, and more preferably 10 to 300 nm. good. As the size of the organic thin film electrical components is miniaturized, it is preferable to be as thin as possible. (1 -4-1) Low dielectric film constitutes a low dielectric film of a gate insulating film, which contains a functional group having no non-covalent electron pair and no π electron bond in the molecular structure. A membrane of a polymer compound. Here, the "functional group" is not related to the formation of the skeleton structure of the main chain of the organic polymer compound, and is bonded to the atomic group branched by the main chain in the main chain. Here, the non-covalent electron pair, among the most peripheral electrons of the atom, is not bonded to other atoms, but pairs of electrons. Also known as the lone pair of electrons 2246-9263-PF; Ahddub 19 200830595 or non-bonded electron pair. In the present embodiment, the functional group having a non-covalent electron pair is bonded to the main chain by the main chain branch, and the main chain itself does not become a base. For example, if the polyoxyethylene has an ether group (-〇-) in the main chain itself or 'if the polyamine has an imine group (> NH) in the main chain itself, the imine group does not have a non-co- The functional group of the valence electron pair. For example, a nitrile group in which polyacrylonitrile has a bonding group in the main chain, or a polyvalent group in which a polytetrafluoroethylene has a fluorine group bonded to a main chain will be contained in a functional group having a non-covalent electron pair.

The π-electron bond is a bond composed of electrons belonging to a 7-turn track. The redundant track is a type of obstruction of electrons in a molecule. For an axis (bonding axis) connecting a nucleus of a nucleus, the orbits having a vertical distribution are superposed on each other above and below the molecular plane. The electronic rail has a specific example of a redundant electronic bonding bond, and may be a double bond bond between carbon and carbon and a double bond bond, a triple bond between nitrogen and carbon, and a double bond between carbon and acid. Bonding, benzene or naphthalene double bond bonding. The organic polymer compound contained in the low dielectric film is a compound having no functional group of a non-covalent electron pair and having no electron bond in the molecular structure as described above. The compounds to be used are all desired in the present invention: The relative dielectric used in the organic polymer compound of the present embodiment is preferably two or less. Furthermore, in this embodiment, the relative dielectric: the number can be hunted by the LCR instrument (Agilent's model 428 (4) volumetric method. As such an organic ancient eight and ^ organic arsenic compound, can be mentioned polyethylene, two look Polyolefins such as polybutene; alicyclic olefin polymers; polyamines; polyscales. Among them, the medium-wave number dependence of Jiexuetang is preferred as a lipid olefin polymer. 20 2246-9263-PF; Ahddub 200830595 The cyclic olefin polymer is a polymer having a naphthene structure in a main chain and/or a side chain, and contains a naphthene structure in the main chain from the viewpoints of mechanical strength and heat resistance. Further, as the naphthene structure, a monocyclic or polycyclic ring (condensation or more 'bridged ring, etc.) may be mentioned. The number of carbon atoms constituting one unit of the naphthenic structure is not particularly limited, but usually It is preferably from 4 to 30, preferably from 5 to 20, more preferably from 5 to 15 in terms of balance of mechanical strength, heat resistance, and formability. Further, it is used in the embodiment. The alicyclic olefin polymer 'is usually a thermoplastic resin. The hydrocarbon polymer generally has a rectification unit having a naphthenic structure in a full reversal unit of the main chain of the alicyclic olefin polymer, and usually has 3 (M〇〇% by weight, preferably 5 〇 to 1 〇〇% by weight). It is better to use 7〇~1〇〇% by weight - the proportion of the reversing unit having the clothing structure is excellent in heat resistance as long as it is in the above range. 'The alicyclic thin-smoke polymer, usually, will have a ring structure. The combined or ring-opening polymerization is then obtained by hydrogenating the unsaturated bonded aromatic moiety as needed. The square coat is used as a hydrocarbon for obtaining an alicyclic olefin polymer, and may be a sea ketone of the original borneol. "Alkene, tetracyclododecene, ethyltetracyclic eleven cis-ethylene tetracyclodene, four-ring [twelve carbon-2,4,6,1 tetra-multi-ring structure of unsaturated /3·02'7]; ring butyl, cyclopentene, cyclohexene, 3,4~2; = hydrocarbon and its derivative cyclohexene, 2 - (2-amimei, π methyl valence Alkene, 3-methylmethylbutyl)-cyclohexene, tetrahydro-4,7-methylene-exene, 3a,5, 6, 7a- formazan 1H-ink, cycloheptene, cyclopentane Two single ring structure ^J hexadiene and other contention {re-saturated smoke and its derivatives materials ethylene, "-methyl phenylethylene 2246-9263-PF; Ahddub 21 200830595 olefin, divinyl benzene and other aromatic vinyl a compound; an alicyclic vinyl compound such as a vinylcyclohexane, a vinylcyclohexene, a vinylcyclodecane or a vinylcyclopentene; etc. The olefin having a ring structure may be used alone or in combination of two or more. The monomer copolymerizable with the olefin having a ring structure may be copolymerized as needed. Specific examples of such a monomer include ethylene, propylene, and the like.

Butene, 1-pentene, 1-hexene, 3-mercapto 1-butene, 3-methyl 1-pentene, 3-ethyl 1-pentene, 4-methyl 1-pentene, 4-methyl 1-hexene, 4, 4-dimethyl 1-hexene, 4, 4-dimethyl 1-pentene, 4-ethyl 1-hexene, 3-ethyl 1-hexene 1,2-octene, 1-decene, burdene, i-tetradecene, hexadecene, octadecene, decene, etc. - olefin; non-conjugated diene such as 1,4-hexadiene, 4-mercapto L 4 -hexadiene, 5-methyl1,4-hexadiene, 1,7-octadiene; These monomers, such as a conjugated olefin such as butadiene and isoprene, may be used alone or in combination of two or more. The polymerization having a cyclic olefin can be carried out in accordance with a conventional method. The polymerization temperature, pressure, and the like are not particularly limited, and are usually polymerized at a polymerization temperature of -5 (rc~1 〇〇, 〇~5 MPa). The hydrogenation reaction is carried out in the presence of a conventional oximation catalyst. Specific examples of the molecules of the ruthenium olefin group include a hydride of a fluorene-based monomer, an addition polymer of a norbornene-based monomer, and a hydride thereof. , raw borneol thin monomer and vinyl compound (ethylene or dilute (4)) 'addition polymer and its hydride, monocyclic dilute polymer and hydrogenated L 曰% conjugated diene monomer Polymers and their hydrides, vinyl coatings; polymers of the early precursors and their hydrides, alkyl ether 22 224 6^9263-PF; Ahcldub 200830595 * compound ^ polymer aroma a hydrogenated product, etc. Among these, a hydride of a polymer of a raw material of a raw material of a raw material of a raw material of a raw material of a raw material, a raw material of a raw material, a Addition polymer of ethylene or α-olefin, etc., aromatic cyclization of aromatic thin smoke polymer It is preferable that the alicyclic monomer is a nitride of a ring-opening polymer, and the alicyclic olefin polymer may be used singly or in combination of two or more kinds. According to the chemical industry, the monomer of the original borneol male structure. The ring-opening polymerization of the original borneol-based monomer can be used to reproduce the polymer of the unit of 2, and the hydrogenation can be repeated as shown in FIG. The polymer of the unit.

[Chemical 3] 2246-9263-PF; Ahddub 23 200830595

In other words, R1 and R2' in the formula 3 represent a substituent which does not have a non-covalent electron pair and has no π-electron bond, and may be bonded to a ring in combination with 1 to 2. R1 and R2 in Chemical Formula 1 and 2, as long as they are subjected to various production steps, the finally obtained alicyclic olefin polymer does not have a functional group having a non-covalent electron pair; It is particularly limited, preferably, to represent a substituent which does not have a non-covalent electron pair and which has no π-electron bond, and may be bonded to μ to form a ring. The molecular weight of the alicyclic olefin polymer used in the present embodiment is not particularly limited. The weight average molecular weight (Mw) in terms of polystyrene measured by gel permeation chromatography (GPC) of olefin polymer 4, anthracycline # is usually 10004,000,000 to 5 〇〇 〇5〇〇〇〇〇 is better, with a range of 1 000 000-250, 000 is better. When the weight average molecular weight (Mw) of the alicyclic olefin polymer is in this range, the balance of heat resistance, adhesion, and surface smoothness is good. The molecular weight distribution of the alicyclic olefin polymer, the ratio of the weight average molecular weight (Mw) to the number average molecular weight (Mw/Mn) measured by GPC using cyclohexane as a solvent, usually 5 or less, preferably 4 or less, and 3 The following is better. The glass transition temperature of the alicyclic olefin polymer is preferably 7 (rc or more, more preferably 12 〇C or more, and most preferably 4 〇i or more. Further, the glass transition temperature can be 2246-9263-PF; Ahddub 24 200830595 is measured by a differential scanning calorimeter. The low dielectric film is not in the molecular structure and does not have a functional group in the molecular structure as long as it does not hinder the appearance of the desired effect of the present invention; In addition to the organic polymer compound bonded by electrons, it can also contain 3', an organic compound that is known to him. There is no non-covalent electron pair, and there is no π-electron bond in the molecular structure. The content of the organic polymer compound in the gate insulating film is preferably 7 (Μ00% by weight, more preferably 9〇~1〇0% by weight. Further, it may be a suitable strip such as a pigment) a coloring agent, a fluorescent whitening agent, a dispersing agent, a thermal stabilizer, a light stabilizer, an ultraviolet absorber, an anti-static agent, an oxidation inhibitor, a lubricant, a solvent, etc., a film of a low dielectric film. (Formation) method, which can be vacuum vapor deposition, molecular growth Method, ion clustering, low energy ion beam method, ion plating, CVD method, sputtering method, electropolymerization method, electrolytic polymerization method, chemical method, spin coating method, knife coating method, soaking Coating method, ^ method, roll coating method, bar coating method, die coating method, LB method, etc. Among these, the method is preferred. The wet method is the above-mentioned organic: molecule which will constitute a low dielectric film. The compound and the above-mentioned compounding agent are dissolved in a solvent to obtain a solvent. The organic polymer compound or the like is used according to a conventional method of selection. As a wet method, for example, a spin coating method or a squeegee coating method , roll coating method, stick method, 喰, ... 榉 层 layer method, 杈 coating method, screen printing method, '卩 brush to special. Also, micro-contact printing, micro / printing method, etc.. In the method of the method, the non-soft lithography method is particularly good. 2246-9263~PF; Ahddub ^ 200830595 (m) Ferroelectric film / ferroelectric film of the gate insulating film, It is not particularly limited. Usually, it can be used as a separate organic polymer, or an insulating organic polymer and an inorganic metal oxide or high-inclusion. The nanoparticles of insulator =: can be selected by the insulating organic polymer, or adjusting the mass ratio between the two insulating molecules is still above nanoparticles, dielectric adjustment

As the material, the ferroelectric film can be formed in the same manner as the above-described low dielectric film. In the formation of the ferroelectric film, in the above-described formation method, the wet method is preferred, and the spin coating method is particularly preferable. The insulating organic polymer may be, for example, selected from the group consisting of polyester, carbonated vinegar, polyvinyl alcohol, vinyl butyral, polyacetal, polyacrylic acid; ester, polyamine, polyamidoxime. Amine, polyether phthalimide, polyphenylene ether, polyphenylene sulfide, polyether sulfone, polyether ketone, polyphthalamide, polyether nitrile, polyether sulfone, polybenzimidazole, polymethyl醯imine, polyoxyalkylene, polymethyl methacrylate, polyacrylamide, nitrile rubber, acrylic rubber, polytetrafluoroethylene, epoxy resin, phenol resin, melamine resin, urea resin, poly Butene, polypentene, ethylene-propylene copolymer, ethylene-butene-diene copolymer, polybutadiene, polyisoprene, ethylene-propylene diene copolymer, butyl rubber, t Methylpentene, polystyrene, styrene-butadiene copolymer, water-added styrene-butadiene copolymer, water-added polyisoprene, water-added polybutadiene, and gas-based ethylated fiber One or more substances of the group consisting of. The nanoparticle of the inorganic metal oxide is not particularly limited, and examples thereof include nano particles such as Ta2〇5, Y2〇3, Ti〇2, Ce〇2, and Zr〇2. The nanoparticle of the high dielectric insulator is not particularly limited, and for example, 2246-9263-PF; Ahddub 26 200830595

BaaSrb dTi〇3 (wherein, dISiKcKhiBSTh PbZreTii-eCha, e satisfies 〇<e<1. ; ρζτ), Bi4Ti3〇i2, BaMgF4,

SrBi2(Tai-fNbf)2〇9 (wherein f satisfies 〇<f<1.), Ba(Zri gTig)〇3 (wherein g satisfies 0 <g<:l.; BZT), BaTi〇 3. Nanoparticles such as SrTi〇3 and Bi4Ti3〇i2. Furthermore, the BadSn_dTi〇3 series is called barium titanate.

Strontium Titanate, usually, is obtained by mixing BaTiCh and SrTi〇3 in a ratio of BaTi〇3: SrTi〇3)··9 to 9:1. These nanoparticles may be used alone or in combination of two or more. The above nanoparticles are preferably one having a dielectric constant of 5 or more. From this viewpoint, generally, a nanoparticle of a high dielectric insulator can be preferably used. The average particle diameter of the nanoparticles is usually 50 nm or less, preferably more preferably (10). Further, the dielectric constant can be measured in accordance with JIS κ 6911, and the average particle diameter can be measured by dynamic light scattering. The material of the ferroelectric film may be substituted for the insulating organic polymer and the above-mentioned nano particles as described above, and at least one type of organometallic compound selected from the group consisting of a titanium compound, a cerium compound, a cerium compound, and a mineral compound may be used. By. In this case, an organic metal compound having a relative dielectric constant of 5 or more is also preferably used. (1-5) Protective film, substrate and forming step The organic thin film transistor of the present embodiment can have a protective film on the outermost layer (for example, the protective film of FIG. 1a, FIG. 2b, FIG. 2a, FIG. : a protective film 'for example, an oxide oxide film formed by α or subtractive plating, a nitride film or a hafnium oxynitride film; a parylene film formed by a thermal CVD method; or a wet method as described above The formed polyimine film, alicyclic olefin high 27 2246-9263~PF; Ahddub 200830595 sub film, ultraviolet curing epoxy film, acrylic tree wax film, etc. are preferred. The film thickness of the protective film is usually preferably from 100 nm to 10 Å. In the organic thin film transistor of the present embodiment, the substrate 11 is used to support a film-shaped organic thin film transistor. The substrate is not particularly limited, and any of them can be used. As the substrate, generally, a polycarbonate substrate, a polyimide or a polyethylene terephthalate (PET), or a flexible plastic substrate such as an alicyclic olefin polymer can be used. A glass substrate such as quartz, soda glass or inorganic alkali glass, or a germanium wafer can also be used. In the organic thin film transistor of the present embodiment, the substrate and/or the protective film are preferably composed of the alicyclic olefin polymer. Since the alicyclic olefin polymer has low moisture permeability or gas permeability, the substrate and/or the protective film are only composed of the above alicyclic olefin polymer, and the effect of preventing deterioration of the organic semiconductor film is high. (1-6) The underlayer and the method for forming the same are shown in Figures & and Figure lb, and the organic thin film electro-thoracic body shown in Figures 2a and 31 contains a compound selected from a polymer or an inorganic oxide and an inorganic nitride. Hit the bottom layer 12. The inorganic oxide contained in the primer layer may be an oxide oxide group, an oxidation group or a gasification group. Further, as the inorganic nitride, a nitrogen cut or a nitrided material can be mentioned. Preferred among these are cerium oxide and cerium nitride. Examples of the ruthenium molecule used for the primer layer containing the polymer and the knives include a polyester resin, a polycarbonate resin, a retort It cellulose resin, an acrylic resin, a urethane resin, a polyethylene resin, Polypropylene is suspected of 匕 匕. 曰 ♦ this vinyl resin, oxygen resin, room borneol resin, ring 始 士 匕 匕 ' 、, 曰, 虱 vinyl vinyl acetate copolymer, chlorine 2246-9263-PF; Ahddub 28 200830595 Vinyl resin, vinyl acetate resin, copolymer of vinyl acetate and vinyl alcohol, partially hydrolyzed vinyl chloride vinyl acetate copolymer, chlorovinyl vinylene chloride copolymer, chlorovinyl acrylonitrile copolymerization , vinyl-vinyl alcohol copolymer, polyethylene glycol, chlorinated polyvinyl chloride, ethylene-vinyl chloride-based copolymer, ethylene-vinyl acetate copolymer, vinyl polymer; A rubber-based resin such as a styrene resin, an ethylene-butadiene resin, a butadiene-acrylic resin; a gum resin, a fluorine (tetra) grease, an alicyclic olefin resin, or the like.

There is no particular limitation on the method of forming the underlayer. The method for forming the underlayer may be, for example, a vacuum distillation method, a molecular beam crystal growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, an atmospheric piezoelectric slurry method, or the like. Dry process; or spray coating, spin coating, knife coating, immersion coating, die casting, roll coating, bar coating, die coating, etc., for printing or spraying A wet process such as a method of patterning ink or the like. τ (division display device) The display device of the present embodiment includes the above-described organic thin film transistor. To more specifically describe the display device, an organic rainbow display device is described as an example. The organic EL display device has at least An organic EL element having pixels arranged on a substrate, and at least two organic thin film transistors of the EL: and at least one of the organic thin film transistors The organic EL device is not particularly limited, and may be, for example, a structure in which a hole transport layer and a light-emitting material layer are formed between (4) the injection electrode and the electron injection electrode serving as a cathode ((4) structure); Injecting electricity 2246-9263-PF; Ahddub 29 200830595 forming a structure of a light-emitting material layer and an electron transport layer between the electrode and the electron injecting electrode (SH-B structure); or forming between the hole injecting electrode and the electron injecting electrode The structure of the hole transport layer, the luminescent material layer, and the electron transport layer (dH structure), etc. In any configuration, the organic component is injected into the electrode by the hole. The anode) into the holes and Zhuang electron injecting electrode (cathode) by the injection of the electrons, the light emitting material layer and the hole (or electron) transporting layer of the interface, and combined with the light emitting material layer of the light emitting principle of motion.

Fig. 3 shows a configuration example of a typical organic EL element. The organic EL τ shown in Fig. 3 is composed of a transparent substrate u, a lower electrode layer (anode) 54, a luminescent material layer 62, and an upper electrode layer (cathode) 55. Further, a protective film 23 is provided as the outermost layer. As the transparent substrate u, the transmittance of light in the visible light region of 4〇〇~7〇〇 is '5G% or more, flat@, and the characteristics do not change when forming the layers of the electrode or the organic EL τ. It is better. The transparent substrate U may be formed of a material selected from the group consisting of plastic, glass, quartz, Shi Xi and Tao Jing. In particular, the use of plastic as a substrate material provides a soft and lightweight organic EL display. Plastic, selected from polycarbonate resin, poly-sulfone resin, polyethylene terephthalate resin, polyimine resin, polymethyl methacrylate, resin and alicyclic polymer = group good. The average thickness of the substrate is usually about 50 to 300 / ζηι. As a material constituting the lower electrode layer ς 4 > u μ -r @ ^ , the layer 54 is a material which emits light from the lower electrode layer, and is made of a material which is Γ 河 河 河 而 而 而 而 而 导电 导电 导电 导电 导电 导电Metallic metal or a laminate thereof. Conductive glass composed of non-doped tin oxide, and "indium oxide, oxidized, and (4) complexes of indium oxide, tin (10)), oxygen 30 2246-9263-PF, Ahddub 200830595, etc. Or), or gold, platinum, silver, copper, etc., ^ 中 0, indium oxide, rhodium, preferably tin oxide. Also as the lower electrode 曰 ' can also use polyaniline or its derivatives, poly (tetra) and other organic The average thickness of the transparent and lower electrode layers can be selected according to the filter penetration and conductivity, and is usually 10 nm to 10 #m, preferably 100 to 500 ΠΠ 1. The lower electrode layer is transparent or translucent, The light-emitting method, the machine-bonding method, and the lamination method in which the metal thin film is heat-pressed may be used. The composition of the luminescent material layer 62 (four) is not particularly special. As a limitation, an organic EL element can be used as a light-emitting material. As a specific example of such a light-emitting material, a fluorescent brightener such as a benzothiazole system, a benzimidazole system or a benzoxazole = Metal chelation, bis(tetra)-compound, phenethyl phenylation a compound, a stilbene group, a n-methyl derivative, an aromatic carbamamate, etc., or a luminescent material layer, which is a mixture of two or more types of luminescent materials, and a method for producing the layer

It is also possible to laminate two or more layers of luminescent materials. The luminescent material may be a vacuum deposition method or a casting method. The luminescent material layer and the average thickness □ may be selected according to the optimum value of the material to be used, and may be selected so as to have a moderate value of the driving voltage and the luminous efficiency, and is usually inm seven m, preferably 2 nm to 500 nm. As the material constituting the upper electrode layer 55 (cathode), it is more preferable that the material having a small work function is a light reflecting light whose light-emitting material layer is reflected toward the upper electrode layer side toward the lower electrode layer side. Specifically, lithium, sodium, potassium, rubidium, planer, strontium, magnesium, calcium, strontium, barium, aluminum, strontium, 31 2246-9263-PF; Ahddub 200830595, diterpene, indium, bismuth, antimony, a metal such as a box, a money, a dart, or the like, and an alloy selected from the group consisting of two or more metals; or a metal selected from the group consisting of metal, gold, silver, ..e ^, (4) , cranes, things, etc. 2: alloys of the above metals; graphite or graphite interlayers Γ 2 specific examples 'can be mentioned... gold, town-indium alloy, bismuth alloy, ... gold, ... gold ♦ indium alloy, about - Ming Alloys, etc. The upper Lei and A u 卩 electrode layers may also be a 2 m layer structure. The manufacturing method of the upper electrode layer can be straightened—, • Μ ^ ^ ^ τ Niuzheng treatment method, sputtering method, electric ore method, and the like. The average thickness of the upper electrode layer is suitable for electrical conductivity or durability, and it is preferable to use ν. The release sling is 100 to 500 nffi for the organic EL element, and the transparent substrate u, the lower electroluminescent material layer 62, the upper electrode B 54 ′, and the protective film 23 can also be transferred. Incoming layer, electroporation transport layer, electron repellent layer, electron injection layer. Snow Qiaoding Mesh door/main entrance layer, which is adjacent to the anode set, and has a layer that improves the injection effect of the hole from the anode ^ τ 午 '^. The hole is implanted to have an average thickness of usually 1 nm to 1 〇〇 nm, preferably 曰 ». 2ππι 50ηιπ. The lightning and η transmission layers are the layers of the transmission hole and the hole. The thick sound of the hole transmission layer, according to the material used, the optimum value of the mouth ^ ^ J /, to make the drive voltage and the hair % rate to a moderate value can be selected, the effect will not produce pinholes The average thickness of the layer where the driving voltage of the component becomes too high is usually: hole transfer wheel, hole injection layer or hole transmission sound nm:, preferably. You can use the material of the layer to be used as an organic EL element. Cattle 2246-9263~pF/Ahddub 32 200830595 The electron transport layer is a layer with the function of transmitting electrons. The electronic transmission is two:::: the material used and the best value is different, as long as The drive power 1 and the luminous efficiency are appropriately selected (4), and at least the thickness of the pinhole is too large, so that the driving voltage of the organic EL element becomes high. Therefore, the average thickness of the electron transport layer, I Hang Feng Inm ~1 // m, preferably 2nm~50〇nm. The electron injection layer is adjacent to the layer provided by the cathode, and has the function of improving the electron injection efficiency of the cathode, and has the effect of reducing the driving voltage of the element. The thickness of the layer is usually inm, preferably 2 nm to 50 nni. As a material for the electron injecting layer of the electron transporting layer, an organic EL device is known as an electron transporting compound. The spin coating method, the casting method, the vacuum vapor deposition method, and the like are given. Fig. 4 is a circuit configuration example of one pixel portion of the organic germanium display device of the present embodiment. The composition of the pixel portion of the organic EL display device In addition, at least two organic thin film transistors for driving the germanium element are required for at least one organic EL element, that is, a transistor and a write transistor are required to be driven, and only the driving transistor is shown in the configuration example of FIG. The writing transistor is omitted. At least one of the driving transistor and the writing transistor is formed of the organic thin film transistor of the present embodiment. In Fig. 4, the anode 54 of the organic EL element 6 and the organic thin film transistor 5 ( The gate electrode 14 of the driving transistor is connected. Then, for example, in the circuit of the active matrix mode shown in FIG. 5, the organic thin film transistor 2 is written in accordance with the voltage applied to the scanning electrode 1 connected to the horizontal driving circuit. The transistor is in an on state, and is stored in the capacitor 4 by a charge connected to the vertical drive circuit in accordance with the signal of the data 2246-9263~PF; Ahddub 33 200830595 pole 3. The drive is accumulated by the amount of charge accumulated in the capacitor 4. The transistor 5 operates to supply a current to the organic EL element 6 to turn on the organic EL element until the voltage is applied to the scanning electrode. (2) In the second embodiment, In the second embodiment, an organic composite electronic component according to the second aspect of the present invention, a method for producing the same, and an organic semiconductor memory using the organic composite electronic component are described. (2 -1) Overall structure of the organic composite electronic component (2) -1-1) Bottom Gate and Stacking Type Figs. 6a to 6f are diagrams showing the manufacturing steps of the organic composite electronic component of the transistor and capacitor of the bottom gate and the stacked type (_(10)(10) Stagger type). The first electrode group forming step (FIG. 6a) in which the inter-electrode electrode Ga and the capacitor counter electrode CE1 are formed in the same step on the substrate n is performed. Further, a primer layer (not shown) may be formed on the substrate u, and the electrodes Ga, cEi may be formed on the primer layer. Next, an insulating film forming step (Fig. 形成) of forming the insulating film 17 on the substrate U including the electrodes Ga' CE1 (on the underlayer when the underlying layer is formed) is performed. The insulating film forming step includes: a ferroelectric film forming step of forming a ferroelectric film; and forming a low dielectric body having a lower dielectric constant than the ferroelectric film 17b on the ferroelectric film 17b A low dielectric film forming step of the film 17a. Thereafter, an organic semiconductor film forming step of forming the organic semiconductor film 16 on the low dielectric film 17a is performed (FIG. 6c). Next, a film removal step of removing the low dielectric 224 6-92 63-PF; Ahddub 34 200830595 • the bulk film m and the organic semiconductor 6 corresponding to the capacitor counter electrode CE1 (which may also include the vicinity thereof) is performed. The film removing step includes: forming or setting a mask MSt mask forming step on the male micro-scale V body film 16 (FIG. 6d); removing the opposite direction corresponding to the capacitor by surname or the like a part of the electrode CE1 step of engraving; and a mask removal step of removing the mask. Thus, a portion of the lower dielectric film 17a and the corresponding capacitor counter electrode CE1 of the organic semiconductor film is formed (FIG. 6). Next, the ferroelectric film 17b and the low dielectric film 17a are sandwiched. And the organic semiconductor film 16 and the gate electrode for the transistor are configured to form a transistor, and the source electrode s for the transistor, the electrodeless electrode ^, and the capacitor electrode 17b sandwich the ferroelectric film 17b. The capacitor electrode counter electrode CE1 is formed in the same step as the $2 _ group forming step of the counter electrode (10) for the capacitor (Fig. 6A. Thereafter, the protective film formation v paint i is formed, and the ruthenium film is used. Thus, the fabrication includes: an organic thin film transistor Tr having a ferroelectric film (10) and a low dielectric film 17a as the gate insulating film 17, and 2246-9263-PF; and Ahddllb 35 1 is insulated by the ferroelectric film 17b. An organic composite electronic component of a high dielectric capacitor Ca of a film. Further, here, a low dielectric film l?a is formed in a low dielectric film forming step, and an organic semiconductor is formed in an organic semiconductor film forming step. After the film 16, in addition to forming the low dielectric film 17a and the organic semiconductor The portion of the capacitor of the film can be formed in the low dielectric film forming step except that the low dielectric film 17a' is formed in the portion where the capacitor is formed, and the organic semiconductor film is formed in the organic semiconductor film forming step except that the organic semiconductor film is formed in the portion where the capacitor is formed. 16., 200830595 Into the film removal step, the bed low dielectric film 17a, only the semiconductor film 16. In this case, the manufacturing includes: using the ferroelectric medium 17b and the low dielectric film 17a as An organic thin film transistor Tr of an interlayer insulating layer 17; and an organic composite Lei of a south dielectric capacitor Ca using an electric film 17b and a low dielectric layer; a swaying film 17a as an insulating film; In addition, the low dielectric film 17a corresponds to the capacitor counter electrode cE1, < the knives are removed, and may not be all in the thickness direction, but only one part is removed.

(2 -1 - 2) bottom gate and coplanar type Fig. 7a to Fig. 7f# 'Fig. of the steps of manufacturing organic composite electronic components including transistors and capacitors of the bottom (10) Gate Coplanar type . The first electrode group is formed on the substrate u by the first electrode group forming step (Fig. 7a) in which the transistor is used as the idle electrode electrode Ga and the counter electrode (8). Alternatively, a base 曰 (..., small figure) may be formed on the substrate u to form the electrodes Ga, CE1 on the underlayer. Immediately, an insulating film forming step (Fig. 7b) of forming the insulating film 17 on the substrate U including the electrodes Ga, (8) (on the underlayer when the underlayer is formed) is performed. In the step of forming a ruthenium film, comprising: forming a ferroelectric film forming a ferroelectric 胄m; and forming a ferroelectric film on the ferroelectric m is lower than the ferroelectric film 17b; The low dielectric film of the low dielectric film is opened in multiple steps. Next, a low dielectric film removing step of removing the portion (may also include the vicinity thereof) of the capacitor dielectric counter electrode CE1 for the low dielectric film 17a is performed. In the film removing step 'the mask forming step (Fig. b) for forming or arranging the mask MSI on the low dielectric film 17a; removing the corresponding 2246-9263-PF by etching or the like; Ahddub 36 200830595 • An etching step of the portion of the counter electrode CE1 in the a state; and a mask removal step of removing the mask MSI. Thereby, a removed portion (Fig. 7c) is formed in a portion of the low dielectric film 17a corresponding to the capacitor counter electrode CE1. Then, the ferroelectric film 17b and the low dielectric film 17a and the transistor idle electrode Ga are used to form a transistor in a predetermined positional relationship, and the source electrode is s? The electrode Dr; and the counter electrode (8) corresponding to the capacitor formed by sandwiching the ferroelectric film 17b are electrically closed. The step of forming the second electrode group of the counter electrode (10) for capacitor formation is performed on the second electrode group. The organic semiconductor film forming step of the semiconductor film 16 (Fig. (8). 2. The enthalpy is removed from the portion of the corresponding capacitor counter electrode CE1 of the semiconductor film 16 (which may also include the attached ... _ (4). The (4) removal step includes: On the organic semiconductors 6 or set the mask MS2 to cover 裉#Fengdun ^Current cake geese in *- w nucleation y (Figure 7e); remove the 'technical (four) counter electrode (8) by etching Part (4) of the steps; and the mask removal step of the masking MS2. Therefore, after the corresponding capacitors II in the spring, the opposite (4) rpi and the money cows are used, the manufacturing is omitted. The method comprises the steps of: forming a protective film by using a ferroelectric film and a shape forming step; thereby, the film 17 The thin film electric film (7) is a gate dielectric insulated high dielectric capacitor. The insulation is combined with the film. After:: 2: The chess formation step forms a low dielectric part of the capacitor, and the step is to remove the low dielectric. The part of the bulk film forming capacitor is open q: and can be low; the electric film forming step is except for the low dielectric film 17a of 40%. Similarly, the organic film formation step of organic 2246-9263~PF; Ahddub 37 200830595 After the organic semiconductor film 16 is formed, the portion of the organic semiconductor film 16 forming the capacitor is removed by the organic semiconductor film removing step, but the organic semiconductor film 16 may be formed in the organic semiconductor film forming step except for forming the capacitor. The corresponding capacitor of the body film 17a is removed from the portion of the counter electrode CE1, and the thickness of the counter electrode CE1 may not be removed, but only one portion is removed. (2 -1 - 3 ) top gate · stacked type Figs. 8a to 8f A diagram of a manufacturing process of an organic composite electronic component including a top gate and a stacked type (T〇pGateStagga's transistor and capacitor. First, the source electrode is used for the substrate, and the drain electrode and the drain are Dr. The first electrode group forming step of the container is performed in the same step as the one side CE1 of the counter electrode, and the organic semiconductor film ΐδ is formed thereon: the organic semiconductor film forming step (Fig. 8a). Further, the substrate may be formed on the substrate. Forming a primer layer (not shown), forming the electrodes on the underlayer, k, CE, and subsequently, removing the organic semiconductor film of the portion of the corresponding capacitor counter electrode CE1 of the organic semiconductor film 16 and its surrounding portion a step of removing the organic semiconductor film, comprising: forming or providing a mask MS1i mask forming step on the organic semiconductor film 16 (FIG. 8 &); removing the counter electrode CE1 corresponding to the capacitor by a residue or the like a partial etching step; and a mask removing step of removing the mask MS1. Thereby, a removal portion (Fig. 8b) is formed in a portion of the corresponding conductor film 16 for the opposing capacitor anode and its surrounding portion. Next, a low dielectric film forming step of forming a low dielectric 胄l7a having a low dielectric constant of a ferroelectric film 17b which will be described later is performed (Fig. 8 2246-9263-PF; Ahddub 38 200830595 1 after y A low dielectric film removal step of removing a portion of the corresponding capacitor counter electrode cEi of the low dielectric film 17a (which may also include the vicinity thereof) is removed. The film removal step T includes: the low dielectric film 17a. a mask forming step of forming or arranging a mask Μ% (FIG. 8c); a step (4) of removing a portion corresponding to the counter electrode CE1 for capacitors by etching or the like; and a mask removing step of removing the mask. This portion forms a removal portion (Fig. 8d) between the corresponding capacitor counter electrode CE1 of the low dielectric body 胄17a.

Next, after the ferroelectric film forming step (Fig. 8e) for forming the ferroelectric film 17b, the source for the transistor is sandwiched between the organic semiconductor film 16, the low dielectric film Ha, and the ferroelectric film 17b. The electrode s〇, the 电极 electrode, and the predetermined positional relationship constitute a transistor for the transistor with the gate electrode; and the ferrule ferroelectric film 17b constitutes a capacitor corresponding to the capacitor counter electrode CE1 for the capacitor pair The electrode group forming step (Fig. 8f) formed in the same step as the electrode (10). Thereafter, although not shown, a protective film forming step is performed to form a protective film. Thereby, the organic thin film transistor Tr including the low dielectric film 17a and the ferroelectric film 17b as the gate insulating film 17 and the high dielectric capacitor using the ferroelectric film i7b as the insulating film are manufactured. Further, here, after the organic semiconductor V film 16 is formed by the organic semiconductor film forming step, the organic semiconductor film removing step removes the portion of the organic semiconductor film 16 which forms the capacitor, but it is also possible The organic semiconductor film forming step is performed except that the organic semiconductor film 16 is formed at a portion where the capacitor is formed. Similarly, after the low dielectric film 胄i is formed by the low dielectric film forming step, the low dielectric film is removed by the low dielectric film removing step. The film 17a forms the capacitor 2246~9263-PF; Ahddub 39 200830595 part, but can also form a low dielectric film 17a in the capacitor portion formed by the low dielectric _ formation step. You + ^ again, low dielectric The removal of the portion of the container film counter electrode CE1 by the body film 17a may not be the same as the thickness = all, and only one portion is removed. To the (2-1-4) top gate/coplanar type Figs. 9a to 9f, The system contains sn# Ding, +, 3 top Gate-composite type (Top Gate copl surface r type) of organic composite electronic components of transistors and capacitors

Manufacturing Step ❿ First, an organic semiconductor film forming step of forming an organic semiconductor 16 on the substrate 11JL is performed (FIG. 90. Alternatively, a primer layer (not shown) may be formed on the U to form the organic layer on the underlayer: Conductor film 16. Next, an organic semiconductor film removing step of removing a portion of the corresponding electric opposite electrode (8) of the organic semiconductor film 16 and its surrounding portion is performed. The organic semiconductor film removing step 'includes: forming on the organic semiconductor film 16 or a mask forming step of the mask MS1 is provided (the masking step of removing the portion corresponding to the capacitor (4) to the electrode CE1 by etching or the like and the mask removing step of removing the mask MSI. Thereby, the organic semiconductor film A portion of the corresponding capacitor counter electrode CE1 and a portion thereof are formed with a removal portion (Fig. 9b). Then, a source electrode drain Dr and a capacitor electrode counter electrode CE1 are formed. The formation step (Fig. 9b) / Next 'The step of forming a low dielectric film forming a low dielectric film 17a having a low dielectric constant of a ferroelectric film 7b to be described later (Fig. 9c). Then, a low dielectric film removal step of removing a portion of the corresponding capacitor counter electrode cei of the low dielectric film 17a (which may also include the vicinity thereof) is performed. The film is removed by the film 40 2246-9263-PF/Ahddub 200830595 a mask forming step of forming or arranging a mask MS2 on the low dielectric film 7a (Fig. 9c); an etching step of removing a portion corresponding to the counter electrode CE1 for capacitors by etching or the like; and removing The mask removing step of the mask is performed, whereby a removing portion (FIG. 9d) is formed in a portion of the low dielectric film 17a corresponding to the capacitor counter electrode CE1. The person forming the iron of the ferroelectric film 17b The electric film forming step (Fig. 9e). Thereafter, the dielectric electrode electrode and the drain electrode Dr are arranged in a predetermined position relationship with the low dielectric film 17& and the ferroelectric film interposed therebetween. A second electrode group forming step in which the capacitor counter electrode CE1 and the capacitor counter electrode CE2 are formed in the same step as the capacitor counter electrode CE1 with the ferroelectric film i7b sandwiching the ferroelectric film i7b (FIG. 9f) After that, although the illustration is omitted, the protective film shape is performed. In this step, a protective film is formed. Thereby, the organic thin film transistor Tr including the low dielectric film 17a and the ferroelectric film m as the interlayer insulating film 17 is formed, and the ferroelectric film claw is used as the insulating film. In this case, after the organic semiconductor film 16 is formed in the organic semiconductor film forming step, the organic semiconductor film removing step removes the portion of the organic semiconductor film 16 which forms the capacitor, only The organic semiconductor film 16 is formed in the organic semiconductor film forming step except for the portion where the capacitance H is formed and its surrounding portion. Similarly, after forming the low dielectric film 17a with a low dielectric film, the low dielectric layer is formed. The electric film removal step removes the portion of the capacitor formed by the low dielectric film Ha', but it is also possible to form the low dielectric film 17a in the low dielectric film formation step except for the portion where the capacitor is formed. Further, the removal of the portion of the counter electrode (10) for the corresponding capacitor of the low dielectric filmer may not be the same as the thickness of the a 224 6-9263-PF; Ahddub 41 200830595, and only one portion is removed. (2-2) Organic semiconductor film and its formation step, a material for forming an organic semiconductor film of a thin film transistor of an organic composite electronic component according to the second embodiment, a film formation method thereof, and the like the same. (2 - 3) electrode and its formation steps

a gate electrode, a source electrode, and a electrodeless electrode of a thin germanium transistor constituting the organic composite electronic component of the second embodiment; and a material for forming a counter electrode of a high dielectric capacitor, and a film formation thereof ( The formation method and the like are the same as those in the first embodiment described above. (2 - 4) Insulating film and its forming step In the organic composite electronic component of the second embodiment, the use of a laminated film for a transistor for a dielectric film has a lower dielectric constant than that of a ferroelectric film. A film having a two-layer structure of an electric film is used as an insulating film for a capacitor: a film formed of a layer of a ferroelectric film. However, it is a film of a two-layer structure of a capacitor body. The dielectric constant, the relative dielectric constant, the forming material, and the film forming method of the low dielectric film and the ferroelectric film and the ferroelectric film are the same in the first embodiment. /, the younger sister of the "it" as a method of forming the low dielectric film when forming the above-mentioned removal portion, can be used for the use of the above-mentioned spin coating method, etc. The money mold pattern, or the metal mask is set, the method of removing the unnecessary portion by etching, using the dry type (4), the wet type _ any method '1 is preferably dry etching. Dry type 2246-9263~PF; Ahddub 42 200830595. The etching method can be exemplified by gas etching, ion etching, plasma etching, ICP (Inductive Coupled Plasma), and white 离子 ion NAME (RIE). However, in addition to the method of removing the film after the film formation or the like, a method of removing the film from the removed portion may be used. For example, the solution may be formed by a solution of a low dielectric material or by a direct ink jet method or the like, or may be formed by using a printing method or the like after the unnecessary portion mask is formed. _ (2 - 5) protective film, substrate, and forming material thereof, a protective film for an organic composite electronic component according to the second embodiment, a material for forming a substrate, a film forming method, a manufacturing method, and the like, and the above-mentioned brother 1 The form of the application is the same. (2-6) The underlayer and the method for forming the same are the organic composite electronic component of the second embodiment, and may also be selected from a compound of a ruthenium molecule or an inorganic oxide and an inorganic nitride on the substrate. The bottom layer. The material for forming the underlayer, the film formation (formation) thereof, the method, and the like are the same as those of the first embodiment described above. Further, the inorganic oxide contained in the underlayer may be exemplified by the cerium oxide, the aluminum oxide, and the oxidized button exemplified in the above-mentioned first first application, and may also be exemplified by titanium oxide tin oxide, oxidized hunger, titanium. Acid bismuth, titanium strontium strontium, strontium titanium lead, lead strontium titanate, barium titanate, barium titanate, barium magnesium fluoride, barium titanate, barium citrate, barium strontium, barium strontium铋, antimony trioxide, etc. The organic composite electronic component manufactured as described above has characteristics of signal writing characteristics and accumulated electric power, and is therefore suitable, for example, for use in manufacturing a memory, a signal circuit for a special wireless transmission tag, and the like. 2246-9263-PF; Ahddub 43 200830595 (2-7) Organic semiconductor memory A capacitor-type organic semiconductor memory can be formed by arranging the organic composite electronic components manufactured as described above in a matrix on a substrate. Figure i is a circuit diagram of an organic semiconductor memory cell of the itic (i transistor · ! capacitor) type. Furthermore, the sense amplifier will be omitted from illustration. The writing is performed such that the WL (word line) of the cell is dynamically made (10) with a voltage of 〇N, and a voltage is applied between BL (bit line) and PL (plate line). When BL is Vcc and pL is GND (OV), the upper portion of the capacitor Ca is + (positive), the lower portion is - (negative), and the lower portion is written to 1", and BL is set to GND, and PL is Vcc. The lower part is + and the "〇" is written. Further, the organic composite electronic component of the present embodiment can be applied to a 2T2C (2 transistor + 2 capacitor) type high dielectric memory cell in addition to the 1T1C type high dielectric memory cell. (3) In the third embodiment, an organic composite electronic component, a method of manufacturing an organic composite electronic component, and an iron using the organic composite electronic component, which are related to the third aspect of the present invention, will be described. The embodiment of the electrical memory. (3-1) The entire structure of the organic composite electronic component (3 -1 -1) bottom gate · stacked type 11a to 11f, including the bottom gate. The stacked type ((4) (10) (four) Stagger type) transistor The n-th electrode group forming step (Fig. 11a) in which the ltth crystal-thortex electrode Gal and the second transistor gate electrode Ga2 are formed in the same step on the substrate u is shown in Fig. n of the manufacturing step of the organic composite electronic component. Further, a 2246-9263-PF and an Ahddub 44 200830595 underlayer (not shown) may be formed on the substrate U, and the electrodes Gal, Ga2 are formed on the underlayer. Next, an insulating film forming step (Fig. 1b) for forming the insulating film 17 is performed on the substrate u including the electrodes Gal, Ga2 (on the underlayer when the underlayer is formed). The insulating film forming step includes: a ferroelectric film forming step of forming the ferroelectric film i 7b; and forming a low dielectric body having a low dielectric constant low dielectric film 17a on the ferroelectric film 17b. Film formation step. The lower dielectric film removal step of removing the low dielectric film i 7a by forming a source/drain electrode to be described later in a predetermined positional relationship with the gate electrode Ga2 for the second transistor. . The film removing step includes: a mask forming step of forming or providing a mask Ms on the low dielectric film 17a (Fig. 11c), and removing the low dielectric film film by etching or the like. An etching step of one portion; and a mask removing step of removing the mask Ms. Thereby, a removal portion (Fig. iid) of the low dielectric film 17a of the source/drain electrode to be described later is formed in a predetermined positional relationship with the gate electrode Ga2 for the second transistor. Thereafter, an organic semiconductor film forming step of forming the organic semiconductor film 16 on the low dielectric film 17a is carried out (Fig. Ue). It-man, carry a sandwich of ferroelectric film! 7b, the low dielectric film **h and the organic semiconductor film 16 form a transistor in a predetermined positional relationship with the first transistor gate electrode Gal, and the ith transistor source electrode s〇i, the drain electrode The second electrode crystal source electrode s2, 汲 is formed by interposing the ferroelectric film 17b and the organic semiconductor film 16 with the second transistor gate electrode Ga2 in a predetermined positional relationship. The second electrode group forming step (Fig. 丨f) in which the electrode electrode Dr2 is formed in the same step. Thereafter, although not shown, a protective film forming step is performed to form a protective film. Thereby, the organic thin film transistor Tr 1 including the 2246-9263-PF; the Ahddub 45 200830595 with the ferroelectric film 17b and the low dielectric film 7 and 17a as the gate insulating film 17; and the iron The electro-mu film 1 body film 17b serves as an organic composite electronic component of the organic thin film transistor Tr 2 of the gate insulating film. Further, here, after forming the low dielectric film na in the low dielectric film forming step, the portion of the lower dielectric film forming the lower dielectric film (the low dielectric film 17a) is removed. a Qiu, drop ★ ^ 4), but can also form a low dielectric film in the low dielectric film formation step except in the portion where the second transistor is formed

173 The removal of the portion of the low dielectric film 17a in the low "electroless medium removal step may or may not be all in the thickness direction, but only one portion is removed. (3-1-2) Bottom Gate Coplanar Type Fig. 12a to Fig. 12f are diagrams showing the manufacturing steps of an organic composite electronic component including a bottom gate/coplanar type (e.g., a (10) Coplanar type) transistor. First, the first electrode group forming step (Fig. 12a) e in which the first transistor gate electrode Gal and the second transistor gate electrode Ga2 are formed in the same step on the substrate U may be used in the substrate. The underlayer (not shown) is formed on the crucible to form the electrodes Gal, Ga2 on the underlayer. Next, an insulating film forming step of forming the insulating film 17 on the substrate n including the electrodes Gal, Ga2 (on the underlayer when the underlying layer is formed) is performed (Fig. 12b). The insulating film forming step includes: forming a ferroelectric film formed by the ferroelectric film m; and forming a low dielectric of the low dielectric film 17a having a low dielectric constant on the ferroelectric film i 7b Body film forming step. This is a low dielectric film removal step of forming a portion of the low dielectric film 17a by a source/drain electrode to be described later in a predetermined positional relationship with the gate electrode g a 2 for the 苐2 transistor. The film removing step comprises: 2246-9263-PF; Ahddub 46 200830595 * ^ a mask forming step of forming or arranging a mask MS on the low dielectric film 17a (FIG. 12c); removing the low by etching or the like a step of etching a portion of the dielectric film 17a; and a mask removing step of removing the mask MS. By this, the removal portion (FIG. 12d) of the low dielectric film layer 7a of the source/drain electrode to be described later is formed in a predetermined positional relationship with the gate electrode Ga2 for the second transistor. The ferroelectric film 17b and the low dielectric film 17a are used to form a transistor in a predetermined positional relationship with the first transistor gate electrode Gal, and the first transistor source electrode S〇i and the drain electrode are formed. The electrode Dr1; and the second electrode crystal source electrode s2 and the annihilation electrode Dr2 are formed by sandwiching the ferroelectric film 17b and the second transistor gate electrode Ga2 in a predetermined positional relationship. The second electrode group forming step formed in the same step (Fig. 12e). Next, an organic semiconductor film forming step of forming the organic semiconductor film 16 is performed on the low dielectric film 17a including the respective electrodes s1, DH, s2, and Dr2 (Fig. 12f). Thereafter, although not shown, a protective film forming step is performed to form a protective film. Thereby, the organic thin film transistor 包括 including the ferroelectric film 17b and the low dielectric film 17a as the gate insulating film 17 and the germanium film which is the gate insulating film of the ferroelectric film 17b are manufactured. Organic composite electronic component of wafer Tr2. Further, after the low dielectric film is formed by the low dielectric film forming step, the portion of the low dielectric film 17a where the second transistor is formed (the portion of the low dielectric film 17a) is removed. However, it is also possible to form the low dielectric film j 7a in the low dielectric film forming step except for the portion where the second transistor is formed. And 'lower; 丨 electric body film removal step, one of the above low dielectric film ^ h 2246-9263-PF; Ahddub ΑΊ 200830595 η 'subtraction, or not all of its thickness direction, but only one unit. (3-1-3) Top Gate and Stacking Type FIG. 13a and FIG. 13f are diagrams for manufacturing steps of an organic composite electronic component including a top gate and a stacked gate type. . The first electrode layer is formed on the substrate u by using the source electrode Sol of the i-th transistor and the electrode electrode Dr1; and the source electrode of the second transistor and the electrode electrode of the second electrode in the same step. Step (Figure 1%). Further, a primer layer (not shown) may be formed on the substrate 1A, and the electrodes Sol, Drl, So2, and Dr2 may be formed on the primer layer. Next, an organic semiconductor film forming step of forming the organic semiconductor film 16 on the substrate 11 including the electrodes Sd, Dr, S2, and Dr2 (on the underlayer when the underlayer is formed); and forming a low dielectric Step of forming a low dielectric film of the bulk film 17a (Fig. 13b) Next, forming a low dielectric state by forming a gate electrode to be described later in a predetermined positional relationship with the second transistor source electrode So2 and the drain electrode Dr2 • A low dielectric film removal step of a portion of the body film 17a. The film removing step 'includes: a mask forming step of forming or arranging a mask MS on the low dielectric film 17a (FIG. 13c); removing a portion of the low dielectric film 17a by etching, etc. a etch step; and a mask removal step of removing the mask MS. Thereby, a removal portion (Fig. i3d) of the low dielectric film 17a of a gate electrode to be described later is formed in a predetermined positional relationship with the second transistor source electrode So2 and the drain electrode Dr2. Thereafter, a ferroelectric film forming step (Fig. 13 e ) of forming the ferroelectric film 17b on the low dielectric film 17a including the removing portion is performed. 2 2 4 6-9 2 6 3-PF; Ahddub 48 200830595 Next, the organic semiconductor film 16, the low dielectric film 17a, and the ferroelectric film i7b are interposed to form a source electrode for the first transistor. The Sol and the drain electrode Dr 1 constitute a first crystal transistor gate electrode Gal in a predetermined positional relationship; and the ferroelectric film 17b and the organic semiconductor film 16 are used to sandwich the source of the transistor 2 The second electrode group forming step (FIG. 13f) in which the second electrode crystal gate electrode Ga2 is formed in the same step as the electrode s 〇 2 and the electrode electrode Dr 2 in a predetermined positional relationship. Thereafter, the protective film forming step is performed to form a protective film, although illustration is omitted. Thereby, the organic thin film transistor Tr1 including the ferroelectric film 17b and the low dielectric film 17a as the gate insulating film 17 and the organic thin film transistor Tr2 using the ferroelectric film 17b as the gate insulating film are manufactured. Organic composite electronic components. Here, after the low dielectric film 17a is formed by the low dielectric film forming step, the portion of the low dielectric film 17a where the second transistor is formed (the low dielectric dragon 17a) is removed. Partly), but it is also possible to form a low dielectric film in the low dielectric film formation step except in the portion where the second transistor is formed.

Ha. In the case of the dielectric dielectric film recording step, a part of the low dielectric film film is removed, and the thickness is not changed, but only one part is removed. (3-1-4) Top Gate · Coplanar Type Figure 14a to Figure 14f, including TS „ Γ , 匕 顶 顶 顶 顶 .

Coplanar type) is a diagram of the manufacturing steps of the right-handed +*, +, + organic bonded electronic components of the transistor. The first step is to form an organic semiconductor film forming step of the organic semiconductor film ie on the substrate u, and to use the source electrode of the transistor 1 in the complex, η, and

The step of forming the drain group formed by the same step (Fig. 14a) is the same step as the second step of the n Q electric day and the source electrode So2 and the drain electrode Dr2. 2246~9263-PF; Ahddub ❹ 200830595 Also on the substrate! ! An underlayer (not shown) is formed thereon, and an organic semiconductor film 16 is formed on the underlayer. Thereafter, a low dielectric film forming step (Fig. 14b) of forming the low dielectric film 17a on the organic semiconductor film 16 of the electrodes such as Μ, %2, 1"

A mask forming step (Fig. 14c); an etching step of one of the lean portions. In this case, a gate electrode to be described later is formed in a predetermined positional relationship with the second transistor source electrode So2 and the drain electrode (four), and the portion of the low dielectric film 17a is removed. a low dielectric film removal step. The film removal step includes: removing or removing the low dielectric film by forming or arranging mask milk on the low dielectric film 17a; and removing the mask MS The mask removal step 2 transistor source electrode s 〇 2, 汲 (the electrode electrode Dr2 forms a removal portion of the low dielectric film 后 of the gate electrode to be described later in a predetermined positional relationship (FIG. 14d). The ferroelectric film forming step of forming the ferroelectric film m on the low dielectric body Qia 17a of the removing portion (Fig. 14 e ) 〇 _ /, - is performed by sandwiching the low dielectric film 17a and the ferroelectric body The film Hb forms a transistor in a predetermined positional relationship with the first transistor (four) electrode S.1 and the gate electrode Dr1, and the interelectrode film Gal: and the ferroelectric film 17b are interposed therebetween. 2 The transistor uses the source electrode s2 and the drain electrode Dr2 to form a transistor in a predetermined positional relationship. The second electrode group forming step (FIG. 14f) in which the electrode electrode Ga2 is formed in the same step. Thereafter, the protective film forming step is performed to form a protective film, which is omitted from the illustration, thereby producing a ferroelectric film 17b and a low portion. The dielectric film 7a is used as the organic thin film transistor Tr1 of the gate insulating film 17; and the organic composite film Tr2 is used as the gate insulating film of the ferroelectric film 17b 2246~9263-PF; Ahddub 50 200830595 ^ Further, here, the low dielectric film 17a is formed by a low dielectric film forming step, and the low dielectric film 17a is removed to form a second transistor (the low dielectric film 1 described above). a part of 7a), but the low dielectric film forming step can be formed in the low dielectric film 1 7a and the low dielectric film removing step except for the portion constituting the second transistor. The removal of one part of 1 & may not be all in the thickness direction, but only one part is removed. (3-2) Organic semiconductor film and its formation step constitute an organic thin film transistor of the organic composite electronic component of the third embodiment Material for forming an organic semiconductor film or film forming thereof The method and the like are the same as those of the first or second embodiment. (3-3) The electrode and the step of forming the same constitute the gates of the jth and second organic thin film transistors of the organic composite electronic component of the third embodiment. The forming material of the electrode, the source electrode, and the electrodeless electrode, and the film forming method thereof are the same as those of the above-described second or second embodiment. (3-4) Insulating film and forming step thereof in the third embodiment The organic composite electronic component is used as a gate insulating film for the i-th transistor, and a film having a two-layer structure of a low dielectric film and a ferroelectric film having a low dielectric constant is used as the second transistor. Use it for free. The film is made of a film made of ferroelectric film. The relative dielectric constant, the forming material, and the film formation of the low dielectric film and the ferroelectric film are the same as those of the first or second embodiment described above. Further, 51 2246-9263 is formed. PF; Ahddub 200830595 can also be used in the same manner as described in the embodiment of the low dielectric film formation method 2 in the above-mentioned removal portion. (3-5) Protective film, substrate and protective film forming the step sub-component and The substrate or the method for producing the same, the organic composite electroforming material according to the third embodiment described above, and the method for forming (forming) the film forming (forming) are the same as the first or second embodiment (3-6), and the underlayer and the method for forming the same

The organic compound in the third embodiment is an ytterbium electron element, and a primer layer containing a compound selected from a polymer or a ruthenium and an inorganic ruthenium compound and an inorganic nitride may be provided on the substrate. The material for forming the underlayer, the film formation method thereof, and the like are the same as those of the first or second embodiment described above (3 - 7). The ferroelectric memory is the second transistor of the organic composite electronic component manufactured as described above. A ferroelectric memory element of a 1 Τ (1 transistor) type can be used, and the organic composite electronic component can be formed in a matrix on a substrate to form a ferroelectric memory (FeRAM: Ferroelectric Rand〇m Access). Mem〇ry). Figure 15 is a diagram showing the circuit of an IT type ferroelectric memory element. In the same figure, BL is a bit line, WL is a word line, and Tr2 is a second organic film transistor. Furthermore, the sense amplifier will be omitted from illustration. The first transistor of the above-described organic composite electronic component can be used as a driving transistor, and lDT/lTFeRAM (l driving transistor/1 transistor ferroelectric memory) can also be constructed. [Examples] Hereinafter, examples of the invention will be specifically described. In the present embodiment, the present invention is used to fabricate an organic thin 2 2 6 6-92 63-PF including a bottom gate and a stacked type as shown in FIG. 2 a; Ahddub 52 200830595 %. Membrane transistor (TFT) Organic electronic components. Further, an organic composite electronic component including a bottom gate/stack type organic thin film transistor (Tr) and a high dielectric capacitor (Ca) as shown in Fig. 6f was produced. Further, an organic composite electronic component including an organic thin film transistor (Trl, Tr2) of two bottom gates and a stacked type is shown in Fig. uf. A polyethylene terephthalate film substrate (25 mm x 10 mm x 0.5 mm size) was used as the substrate. The gate electrode (and the electrode for the capacitor) is formed by pouring a mineral on the substrate. The steaming of Ming is based on a vacuum of less than lxl〇-2Pa, the temperature of the substrate is RT (room temperature), and the film thickness is about 2〇〇nm. The i-th layer ferroelectric film having an insulating film having a two-layer structure is obtained by dissolving cyanoethylated cellulose (manufactured by Shin-Etsu Chemical Co., Ltd.: cyano resin CR_S (trade name)) in cyclopentanone to produce a concentration of 3~ 7 wt% solution. This solution was applied by a spin coating method using a number of revolutions of 3000 (rpm) for 3 seconds, and dried by drying at 1 Torr for 2 minutes. The ferroelectric film has a film thickness of about 3 Å and a relative dielectric constant of 17. The low dielectric film of the second layer of the insulating film is an alicyclic olefin polymer (manufactured by Nippon Steel Co., Ltd.: ZE0NEX (registered trademark) 48% 5% cyclohexane solution 5 ml' using a rotation number of 5 〇〇 0 (rev/min) 3 () second spin coating method coating was formed by drying at β0 C for 2 minutes. The film thickness of the low dielectric film was about 30 nm, and the relative dielectric constant was 2.2. The organic semiconductor film is formed by vapor deposition on the insulating film. The steamed ore in the province is less than 2xl〇-3Pa, the substrate temperature is RT (room temperature), and the evaporation temperature is 185 °C. The vapor deposition rate was 〇·〇6 nm/s, and the film thickness was 53 2246-9263-PF; Ahddub 200830595 was performed at about 5 〇 nm. The source electrode and the drain electrode (w=5_ ; L=20-70 /zm) The organic semiconductor film is covered with a metal mask, and is formed by vapor deposition of gold. The vapor deposition of gold is performed under a vacuum of less than lxl 〇 2 Pa, and the substrate temperature is RT (room temperature), so that the film thickness is about 2 The electrical properties of the organic thin film transistor (organic Τρτ) of the gate insulating film are used as the insulating film of the two layers of the ferroelectric film and the low dielectric film thus produced. The measurement of the flow-voltage curve is evaluated, and the results are shown in Fig. 16 and Fig. 17. The measuring device is R6425 2 Channel CUrrent-Voltage Source/Monitor ° Fig. 1 6 is a state in which VG is in a state such that vd is +1 〇V and - VD-ID line diagram when changing between 30V' Figure 17 is a line diagram of 70 in a certain state (--300 〇? & VG-II when changing between +10V and -30V). From these results It can be seen that the two layers of the ferroelectric film and the low dielectric film of the present embodiment serve as the organic transistor (Tr, Tr1) of the gate insulating film, which can operate at a low driving voltage, and has very low hysteresis. Further, the second transistor (1^2) having an organic composite electronic component having two transistors, that is, an organic thin film transistor having a single-layer ferroelectric film as a gate insulating film ( The electrical characteristics of the organic TFT are evaluated by the measurement of the current-voltage curve, and the results are shown in Fig. 18. It can be seen that the second transistor (Tr2)' can operate at a low driving voltage, and is suitable for use with a large hysteresis. In the ferroelectric memory, the embodiments and examples described above are It is to be understood that the present invention is not limited to the description of the present invention. Therefore, all the elements of the above-described embodiments and examples are disclosed, and all the modifications of the scope of the technology of the present invention 54 2246-9263-PF; Ahddub 200830595 The design or the equivalents are all included herein. The present invention claims priority from Japanese Patent Application Nos. 2006-31 9184, 2006-31 91 85, and 2006-31 9186. November 27, the year of the year, and the entire contents of which are incorporated herein by reference. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1a is a view showing a configuration example of an organic thin film transistor of a top gate/stack type which is not in the first embodiment. Fig. 1b is a view showing a configuration example of an organic thin film transistor of a top gate/coplanar type according to the embodiment of the invention. Fig. 2 is a view showing a configuration example of a bottom gate/stack type organic thin film transistor according to the first embodiment. Fig. 2b is a view showing a configuration example of a bottom gate/coplanar type organic thin film transistor of the first embodiment. Fig. 3 is a view showing a configuration example of an organic EL device of the first embodiment. Fig. 4 is a view showing a configuration example of a pixel portion of the organic EL display device of the first embodiment. Fig. 5 is a view showing an example of a circuit of an active matrix type organic EL display device according to the first embodiment. Fig. 6a is a view showing a manufacturing step (No. 1) of the organic composite electronic component of the bottom gate/stacked organic thin film transistor and the capacitor of the second embodiment. Fig. 6b is a view showing the manufacturing steps of the organic composite electronic component including the 2246-9263-P?; Ahddub 55 200830595 machine-transistor crystal and the Lei-Juan-Jian-Zhai, including the bottom gate and the stacked type of the second embodiment; ) The map. Fig. 6 c is a statement 4^. — ^ The manufacturing process of the organic composite electronic component of the bottom gate, the stacked type organic thin film transistor and the electric t-electricity of the second embodiment (3) Picture. 2 Manufacturing Step of Organic Composite Electronic Component of Bottom Gate and Stacking Type of Embodiment FIG. 6d is a view showing a semiconductor thin film transistor and a capacitor (4).

Fig. 6e is a view showing an organic thin film transistor and an electric & Manufacturing Procedure of Organic Composite Electronic Component of Bottom Gate and Stacking Type of the Second Embodiment Fig. 6 f is a view showing a film transistor and a capacitor (6). Manufacturing steps of the organic composite electronic component of the bottom gate and the stacked type of the second embodiment

Fig. 7a is a view showing a first organic thin film transistor and a condenser (1). 2Steps of Manufacturing the Bottom Gate and Coplanar Organic Composite Electronic Device of the Second Embodiment FIG. 7b shows the bottom gate/coplanar type organic thin film transistor and the electric cross WI of the second embodiment. Fig. 7c shows the bottom gate/coplanar organic thin film transistor and the organic composite electronic component of the Ray #@电使器 according to the second embodiment of the present invention. A diagram of the manufacturing steps (3). Figure 7d shows the 2246-9263-PF of the bottom gate and coplanar type of the package of the embodiment of your brother 2; Ahddub 56 200830595 Organic thin film transistor and the device of the Thunder _ _ _ _ _ _ _ _ _ (the 4) map. 2 Manufacturing Step of Organic Composite Electronic Component of Bottom Gate and Coplanar Type of Embodiment FIG. 7e is a view showing a first organic thin film transistor and a capacitor (5). Fig. 7f is a diagram showing the manufacturing process of the organic thin film transistor of the bottom gate/coplanar type and the 畲 ☆, (6) of the second embodiment.

Fig. 8a is a view showing a film transistor and a capacitor (1). The manufacturing procedure of the organic composite electronic component of the top gate and the stacked type of the embodiment of the second embodiment is shown in Fig. 8b which is a diagram showing the semiconductor film and the capacitor (2). 2 Manufacturing steps of the organic composite electronic component of the top gate and the stacked type of the embodiment

Fig. 8c is a view showing a semiconductor thin film transistor and a capacitor (3). (2) Manufacturing procedure of the organic composite electronic component of the top gate and the stacked type of the embodiment Fig. 8d is a view showing the semiconductor thin film transistor and the capacitance number (4). (2) Manufacturing steps of the organic composite electronic component of the top gate and the stacked type of the present embodiment Fig. 8 e is a view showing the film transistor and the capacitor (5). The manufacturing procedure of the organic composite electronic component of the top gate and the stacked type device of the second embodiment is shown in Fig. 8f, which shows that the top gate and the stacked type of the second embodiment have no 22 4 6-92 63- PF; Ahddub 57 200830595 Organic composite electronic components manufacturing steps machine film transistor and capacitor ^ (6). The figure is a diagram showing the manufacturing steps (1) of the organic composite electronic component of the top-gate, coplanar organic thin film transistor and capacitor of the second embodiment. The figure shows the manufacturing steps (2) of the organic composite electronic component including the top gate/coplanar type of the second embodiment and the organic composite electronic component of the prior art.

The figure shows a manufacturing process (3) of an organic thin film transistor including a top gate/coplanar type according to the second embodiment and an organic complex a electronic element of Ray & w ^ ^ ^ ^. Fig. 9d is a view showing a manufacturing step (4) of an organic thin film transistor including a top gate/coplanar type according to the second embodiment and an organic composite electronic component of the same. Fig. 9e is a view showing a manufacturing step (part 5) of the organic complex S electronic device including the top idler coplanar type organic thin film transistor of the _ 2 embodiment and the φκ ^ ^ ^ ^ _ electric device. Fig. 9f is a view showing a manufacturing step (part 6) of the organic composite a-electrode device including the top gate/coplanar type of the second embodiment and the organic complex a-electron device of the device. Fig. 10 is a view showing a configuration example of a dielectric memory cell of the embodiment of the Afc. Fig. 11a is a view showing a manufacturing step (the 丨) of a composite electronic component having a bottom gate/stack type of the third embodiment including an organic thin film transistor; Ahddub 58 200830595 Fig. 11b A diagram showing a manufacturing step (part 2) of the organic composite electronic component including the bottom gate/stacked organic thin film transistor of the third embodiment. Fig. UC is a view showing a manufacturing step (part 3) of the organic composite electronic component including the bottom gate/stack type organic thin film transistor of the third embodiment.

Fig. 1 is a view showing a manufacturing step (4) of the right M 1 ... version of the organic thin film transistor of the bottom gate/stack type of the third embodiment. Fig. 11 is a view showing a manufacturing step (part 5) of the right total 'composite electronic component of the bottom gate/stack type organic thin film transistor of the third embodiment. Figure 11 f shows the package. The bottom gate of the embodiment 3 of the invention is a drag of the organic thin film transistor of the stacked type, and the manufacturing step of the organic electronic component (the 6) is shown in Fig. 0. Fig. 12a shows the organic thin film transistor including the first organic thin film. There are pictures. 3 Manufacturing Step of Bottom Gate and Coplanar Composite Electronic Component of Embodiment (Type 1) 3 Manufacturing Step of Bottom Gate/Coplanar Composite Electronic Component of Embodiment (Part 2) FIG. 1b shows the inclusion of the first An organic picture of an organic thin film transistor. Figure 12 c shows the manufacturing steps of the organic composite electronic component including the bottom gate · coplanar type ~ organic thin film transistor of the B 3 embodiment of the present invention (3) 2246-9263-PF; Ahddub 59 200830595 Picture. Fig. 12d is a view showing a manufacturing step (4) of the organic composite electronic component including the bottom gate/coplanar type organic thin film transistor of the third embodiment. Fig. 12e is a view showing a manufacturing step (part 5) of the organic composite electronic component including the bottom gate/coplanar type organic thin film transistor of the third embodiment.

Fig. 12f is a view showing a manufacturing step (part 6) of the organic composite electronic component including the bottom gate/coplanar type organic thin film transistor of the third embodiment. Fig. 13a is a view showing a manufacturing process of a right-handed, organic composite electronic component including an organic thin film transistor of a top gate/stack type according to the third embodiment (Fig. 13b) The top gate of the form and the laminated organic film transistor have a pattern. The manufacturing step of the organic composite electronic component (2) is shown in Fig. 13c, which is a red-clad type (3) The top gate organic thin film transistor of the embodiment has her > the fabrication of the composite electronic component + Fig. ^ Fig. 13d shows the red envelope type ^ (the 4) 3 the third embodiment of the thumb The organic thin-film transistor has a drag-and-drop structure. The 13e shows the organic thin film transistor. The composite electronic component of the third embodiment is a tribute gate stack. 2246-9263-PF of the manufacturing process of the integrated type (Part 5); Ahddub 60 200830595 Fig. 13f shows the composite electronic component including the organic thin film transistor. The top gate and the stacked type composite electronic component of the third embodiment Figure 14a of the manufacturing step (the 6) shows the organic thin film electro-crystal included Embodiment 3 top right hand extreme form gate. Xu coplanar type machine composite manufacturing steps for electronic components (of which n in FIG.

Fig. 14b is a view showing the organic layer including the first organic thin film transistor. 3 Manufacturing step of the top gate and coplanar composite electronic component of the embodiment (its

2) Figure 14c is a view showing the organic layer including the first organic thin film transistor. 3 Top Gate and Coplanar Embodiments of Manufacturing Embodiments (Product Type 3) FIG. 14d does not include the top gate of the third embodiment.

A diagram of a manufacturing step (4) of an organic composite electronic component of an organic thin film transistor. Fig. 14e is a view showing a manufacturing step (part 5) of the organic composite electronic component of the top gate coplanar type organic thin film transistor of the third embodiment. Fig. 14f is a view showing a manufacturing step (part 6) of the organic composite electronic component including the top gate/coplanar type organic thin film transistor of the third embodiment. Fig. 15 is a view showing a configuration example of a ferroelectric memory cell according to a third embodiment. Fig. 0 224 6-9263-PF; Ahddub 61 200830595 Fig. 16 is a view showing a VD-ID of the transistor or the first transistor of the embodiment. line graph. Fig. 17 is a VG-ID line diagram showing the transistor or the first transistor of the embodiment. Fig. 18 is a VG-ID diagram showing the second transistor of the embodiment. [Main component symbol description] 11~substrate; 14~dip electrode; 16~me semiconductor film; 17a~low dielectric film; 1-8~gate electrode; 12~under layer; 15~source electrode, 17~ Gate insulating film; 17b~ ferroelectric film; 23~protective film; CE1~capacitor counter electrode; CE2~capacitor counter electrode;

Ca~high dielectric capacitor; Dr~汲 electrode; G a~gate gate electrode; S 〇~source electrode;

Tr~organic film transistor. 2246-9263-PF; Ahddub 62

Claims (1)

200830595 X. Patent application scope: 1. - Organic thin film transistor on the substrate; Gate insulating film, organic semiconductor A, electrode F m bovine conductor film, source electrode and electrodeless electrode, "Yes. An electro-membrane, which is interposed between an iron ray body film and a low dielectric constant of the ferroelectric body Hf_, f 4 'gastric body film, 八'#钟', which has no π-electron bond The low dielectric film comprises: an organic polymer compound having a functional group of a non-covalent electron pair and a molecule 1 and a chelate, and a phototransistor as described in the scope of claim 2, and The relative dielectric constant of the ferroelectric film is 5 or more, and the relative dielectric constant of the low dielectric film is 4 or less. The organic thin film electrocrystal described in the above item (1), which further has a protective film. A method for producing an organic thin film transistor, comprising: a first step of forming a gate electrode on a substrate; a second step of forming a ferroelectric medium on the substrate including the gate electrode; and the ferroelectric body a third step of forming a low dielectric film having a lower dielectric constant than the ferroelectric film; a fourth step of forming an organic semiconductor film on the low dielectric film; forming a source on the organic semiconductor film In the fifth step of the electrode and the drain electrode, the third step includes: the function 224 6-9263-PF having no non-covalent electron pair; Ahdciub 63 200830595 and the molecular structure and the helmet ★ also, The step of π-electron-bonded organic polymer compound is dissolved in a solvent to obtain a solution agent. ^ , 胄 After the solution is cast, the image is formed by matrix arrangement on the substrate after the solution is removed.素: There are at least one organic EL element and at least two organic thin film transistors for driving the organic EL element, and at least one of the organic thin film transistors is an organic thin film electrowine according to item u 2 of the patent application. A method for producing an organic composite electronic component, comprising: a method of forming an organic composite electron (IV) including a transistor and a capacitor on a substrate, comprising: forming a first electrode group for a transistor and a first electrode group for a capacitor; Electrode group forming step; ferroelectric film forming step of forming a ferroelectric film; forming a low dielectric film forming step of a low dielectric film having a lower dielectric constant than the ferroelectric film; And an organic semiconductor film forming step of forming an organic semiconductor film including a portion of the transistor; and sandwiching the ferroelectric film and the low dielectric film at least in a predetermined positional relationship with the first electrode group for the transistor a second electrode group for forming a transistor; and a second electrode group forming step of forming a second electrode group corresponding to the capacitor with the 帛i electrode group for the capacitor interposed therebetween. 7. An organic composite electronic component. Including the electromagnet and the capacitor on the substrate, including: ferroelectric film; 2246~9263-PF; Ahddub 64 200830595 low dielectric film, with iron a low dielectric constant of a bulk film; an organic semiconductor film; a gate electrode for a transistor and a source for a transistor which are disposed with a predetermined positional relationship between the ferroelectric film and the low dielectric film; ; at least one of the opposite arrangement of the ferroelectric film is used to power the capacitor 8. An organic semiconductor memory comprising the organic composite electronic component of claim 1 of the patent application. A method of producing an organic composite electronic component, comprising: a method of forming an organic composite electronic component of an i-th transistor and a second transistor on a substrate, comprising: forming a first transistor for the first electrode of the transistor; a first electrode group forming step of the electrode group and the first electrode group; a ferroelectric film forming step of forming a ferroelectric film; and a portion forming the second transistor, including a portion forming the second transistor a low dielectric film forming step of a ferroelectric medium low dielectric constant low dielectric film; an organic semiconductor film forming step of forming an organic semiconductor film; 曰曰 sandwiching at least the ferroelectric film and the low dielectric film Forming the i-th electron crystal in a predetermined positional relationship with the first electrode group for crystals, the second electrode group; and at least the ferroelectric film interposed therebetween and the first; The first electrode group is formed by the first electrode group in a predetermined positional relationship, and the second electrode group forming step of the electrode group is formed. 65 2246-9263-PF; Ahddub 200830595 m. 1〇 · An organic composite electronic component comprising a dielectric transistor on a substrate and comprising a second transistor; a low dielectric film having The organic semiconductor film having a lower dielectric constant than the ferroelectric film; the first gate electrode for the first transistor and the first electrode disposed at least in a predetermined positional relationship with the ferroelectric film and the low dielectric film interposed therebetween A source/drain electrode for a crystal; I a gate electrode for a second transistor and a source electrode for a second transistor, which are disposed at least in a predetermined positional relationship with the ferroelectric film interposed therebetween. U. A type of organic ferroelectric memory, comprising the organic composite electronic component according to claim 10 of the patent application. 66 2246-9263-PF; Ahddub