WO2021031838A1 - 电子装置 - Google Patents

电子装置 Download PDF

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Publication number
WO2021031838A1
WO2021031838A1 PCT/CN2020/106660 CN2020106660W WO2021031838A1 WO 2021031838 A1 WO2021031838 A1 WO 2021031838A1 CN 2020106660 W CN2020106660 W CN 2020106660W WO 2021031838 A1 WO2021031838 A1 WO 2021031838A1
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WO
WIPO (PCT)
Prior art keywords
line
vertical
signal line
shielding
substrate
Prior art date
Application number
PCT/CN2020/106660
Other languages
English (en)
French (fr)
Inventor
钟岳宏
李珉泽
郑圣谚
陈品妏
翁嘉鸿
余悌魁
徐雅玲
廖烝贤
Original Assignee
友达光电股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 友达光电股份有限公司 filed Critical 友达光电股份有限公司
Priority to DE112020003935.8T priority Critical patent/DE112020003935B4/de
Priority to KR1020217006568A priority patent/KR102409301B1/ko
Publication of WO2021031838A1 publication Critical patent/WO2021031838A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0281—Arrangement of scan or data electrode driver circuits at the periphery of a panel not inherent to a split matrix structure

Definitions

  • the present invention relates to an electronic device.
  • the present invention provides an electronic device whose design can help reduce the coupling between lines and provide improved quality.
  • the electronic device of the present invention includes a substrate, a plurality of horizontal signal lines, a first vertical signal line, a second vertical signal line, and a first shielded vertical line.
  • the multiple horizontal signal lines, the first vertical signal lines, the second vertical signal lines and the first shielded vertical lines are all arranged on the substrate.
  • the first vertical signal line intersects the horizontal signal line.
  • the second vertical signal line intersects the horizontal signal line, and the second vertical signal line is connected to one of the plurality of horizontal signal lines.
  • the vertical projection of the first shielding longitudinal line on the substrate is located between the vertical projection of the first longitudinal signal line on the substrate and the vertical projection of the second longitudinal signal line on the substrate.
  • the above-mentioned electronic device further includes a plurality of pixel structures disposed on the substrate.
  • One of the plurality of pixel structures is surrounded by two adjacent horizontal signal lines and the second vertical signal line and includes a pixel electrode.
  • the pixel electrode overlaps the first vertical signal line or the second vertical signal line in a direction perpendicular to the substrate.
  • the aforementioned pixel electrode overlaps the first shielding vertical line.
  • the aforementioned pixel electrode straddles the second vertical signal line, the pixel electrode has a central trunk portion, and the second vertical signal line overlaps the central trunk portion.
  • the above-mentioned first shielding longitudinal wire is a transparent wire.
  • the aforementioned electronic device further includes a common electrode line.
  • the common electrode line is arranged on the substrate.
  • the common electrode line is located between adjacent two of the plurality of lateral signal lines.
  • the above-mentioned common electrode line intersects the first vertical signal line and the second vertical signal line.
  • the above-mentioned first shielding vertical line and the common electrode line are directly stacked on each other.
  • the aforementioned electronic device further includes at least one insulating layer and a conductive structure penetrating the insulating layer.
  • the insulating layer is disposed between the first shielding longitudinal line and the common electrode line, and the conductive structure electrically connects the first shielding longitudinal line and the common electrode line.
  • the above-mentioned electronic device further includes a plurality of pixel structures disposed on the substrate.
  • One of the pixel structures is located between adjacent two of the plurality of horizontal signal lines and includes a pixel electrode.
  • the first film layer for shielding the vertical line is located between the film layer of the common electrode line and the film layer of the pixel electrode.
  • the above-mentioned electronic device further includes a plurality of pixel structures disposed on the substrate.
  • One of the pixel structures is located between adjacent two of the plurality of horizontal signal lines and includes a pixel electrode.
  • the film layer of the common electrode line is located between the film layer of the first shielding vertical line and the film layer of the pixel electrode.
  • the aforementioned common electrode line includes a first line and a second line.
  • the first shielding longitudinal line overlaps the first line, the second line, or both.
  • the above-mentioned electronic device further includes a second shielded longitudinal wire.
  • the first vertical signal line is located between the first shielding vertical line and the second shielding vertical line between the pixel electrodes.
  • the above-mentioned electronic device further includes a third shielded longitudinal wire.
  • the third shielded longitudinal line is located between the first longitudinal signal line and the second shielded longitudinal line.
  • the aforementioned electronic device further includes a fourth vertical signal line.
  • the vertical projection of the first vertical signal line and the third vertical signal line on the substrate is located between the vertical projection of the second vertical signal line on the substrate and the vertical projection of the fourth vertical signal line on the substrate.
  • the aforementioned electronic device further includes a shield electrode.
  • the shield electrode is connected to the first shield longitudinal line.
  • the above-mentioned first shielded vertical line is completely located between two adjacent ones of the plurality of horizontal signal lines.
  • the aforementioned electronic device further includes a plurality of pixel structures disposed on the substrate.
  • One of the pixel structures includes a pixel electrode.
  • the vertical projection of the first shielding longitudinal line on the substrate is outside the vertical projection of the pixel electrode on the substrate.
  • the above-mentioned electronic device further includes a plurality of pixel structures and a third vertical signal line.
  • a plurality of pixel structure arrays are arranged on the substrate.
  • the second vertical signal line is located between the third vertical signal line and the first vertical signal line, and the first vertical signal line, the second vertical signal line, and the third vertical signal line are located between two adjacent rows of the plurality of pixel structures .
  • the above-mentioned electronic device further includes a second shielded longitudinal wire, which is disposed on the substrate.
  • the vertical projection of the second shielding longitudinal line on the substrate is located between the vertical projection of the second longitudinal signal line on the substrate and the vertical projection of the third longitudinal signal line on the substrate.
  • shielded wiring is provided between adjacent lines that transmit different signals to reduce the adverse effects caused by the coupling between the lines.
  • the shielded wiring may be a transparent wiring. Therefore, when the electronic device is used to display images, its display aperture ratio can be reduced without being affected by the shielding wiring.
  • Fig. 1 is a schematic partial top view of an electronic device.
  • FIG. 2 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • FIG. 3 is a schematic diagram of an embodiment of the cross-section along the section line A-A in the electronic device of FIG. 2.
  • FIG. 4 is a schematic diagram of another embodiment of the cross section along the section line A-A in the electronic device of FIG. 2.
  • 5 to 10 are respectively partial schematic diagrams of an electronic device according to an embodiment of the disclosure.
  • FIG. 11 is a schematic diagram of another embodiment of the cross section along the section line B-B in the electronic device of FIG. 2.
  • FIG. 12 is a schematic diagram of another embodiment of the cross-section along the section line B-B in the electronic device of FIG. 2.
  • FIG. 13-19 are partial schematic diagrams of an electronic device according to an embodiment of the disclosure.
  • FIG. 20 schematically shows an embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line C-C.
  • FIG. 21 schematically shows an embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line D-D.
  • FIG. 22 schematically shows another embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line C-C.
  • FIG. 23 schematically shows another embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line D-D.
  • FIG. 24 schematically shows another embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line C-C.
  • FIG. 25 schematically shows still another embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line D-D.
  • FIG. 26 is a schematic top view of an electronic device according to an embodiment of the disclosure.
  • FIG. 27 is a schematic top view of an electronic device according to an embodiment of the disclosure.
  • FIG. 28 schematically shows an embodiment of the cross-sectional structure of the electronic device of FIG. 27 along the section line E-E.
  • FIG. 29 schematically shows an embodiment of the cross-sectional structure of the electronic device of FIG. 27 along the section line E-E.
  • FIG. 30 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • FIG. 31 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • FIG. 32 schematically shows an embodiment of a cross-section of the position where the first shielding vertical line 250A is located in the electronic device 200A of FIG. 31.
  • FIG. 33 schematically shows another embodiment of the cross section of the position where the first shielding vertical line 250A is located in the electronic device 200A of FIG. 31.
  • 34 to 36 are schematic partial top views of an electronic device according to an embodiment of the disclosure.
  • FIG. 37 schematically shows an embodiment of a cross-sectional structure where the first shielding longitudinal line 350A is located in the electronic device 300.
  • FIG. 38 schematically shows another embodiment of the cross-sectional structure where the first shielding vertical line 350A is located in the electronic device 300.
  • FIG. 39 schematically shows another embodiment of the cross-sectional structure of the electronic device 300.
  • FIG. 1 is a schematic partial top view of an electronic device.
  • the electronic device 100' includes a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, and a plurality of pixel structures 140.
  • the pixel structure 140 is arranged on the substrate 110 in an array arrangement.
  • the pixel structure 140 is arranged in an array along a first direction D1 and a second direction D2 intersecting the first direction D1, where the first direction D1 can be understood as a lateral direction, and the second direction D2 can be understood as a longitudinal direction. Therefore, the transverse direction and the longitudinal direction described in the following embodiments can be regarded as the first direction D1 and the second direction D2 in FIG. 1 respectively.
  • Each pixel structure 140 is connected to one of the plurality of horizontal signal lines 120.
  • the plurality of vertical signal lines 130 may be divided into vertical signal lines DL directly connected to the pixel structure 140 and vertical signal lines VL not directly connected to the pixel structure 140.
  • the pixel structures 140 arranged in a row along the second direction D2 are sandwiched between two vertical signal lines DL, and each pixel structure 140 is connected to one of the vertical signal lines DL.
  • different pixel structures 140 arranged in the same column along the second direction D2 may be respectively connected to the longitudinal signal line DL on the first side and the longitudinal signal line DL on the opposite second side.
  • Each vertical signal line VL is sandwiched between two columns of pixel structures 140 and between two vertical signal lines DL.
  • the vertical signal line VL includes a vertical signal line VL1 connected to the horizontal signal line 120 through a corresponding conductive structure VIA, but it is not limited to this.
  • each pixel structure 140 may include an active element 142 and a pixel electrode 144 connected to the active element 142, where each active element 142 may be a transistor with a gate, a source, and a drain, and the gate may be connected To one of the horizontal signal lines 120, the source is connected to one of the vertical signal lines DL, and the drain is connected to the pixel electrode 144.
  • each horizontal signal line 120 is connected to one of the vertical signal lines VL1. Therefore, the signal of the gate of the active element 142 can be transmitted to the horizontal signal line 120 by the vertical signal line VL1, and then input to the gate by the horizontal signal line 120.
  • the horizontal signal line 120 and the vertical signal line 130 may be composed of different layers, and there may be a sandwich between the horizontal signal line 120 and the vertical signal line 130. Or multiple insulating layers.
  • a conduction structure VIA may be provided between the corresponding vertical signal line VL1 and the horizontal signal line 120. In this way, the signal required by the gate can be transmitted to the horizontal signal line 120 by the vertical signal line VL1 through the conductive structure VIA, and then transmitted to the gate by the horizontal signal line 120.
  • the electronic device 100' may further include a driving circuit IC, and the driving circuit IC is located at one end of the vertical signal line 130.
  • the vertical signal line DL and the vertical signal line VL1 can directly receive the signal provided by the driving circuit IC, and the horizontal signal line 120 can receive the corresponding signal through the vertical signal line VL1.
  • the electronic device 100' does not need to be provided with signal transmission lines or related circuits at both ends of the first direction D1, and can achieve a narrow frame design, and the outline of the electronic device 100' does not need to be limited.
  • the electronic device 100' may have a non-rectangular outline.
  • the vertical signal line VL in the electronic device 100' may further include a vertical signal line VL2, and the vertical signal line VL2 may not be used to transmit a signal required by the horizontal signal line 120, but a direct current potential is input.
  • the vertical signal line VL2 may not be connected to any horizontal signal line 120, but is applied to the realization of touch control or other functions.
  • the electronic device 100A of FIG. 2 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100A of FIG. 2 has a layout design that is substantially similar to that of the electronic device 100' of FIG. 1. Therefore, the same component symbols are used in the descriptions of the two to represent the same components.
  • the electronic device 100A includes a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a plurality of pixel structures 140, and a plurality of first shielded vertical lines 150A, and a plurality of horizontal signal lines 120,
  • the vertical signal lines 130, the plurality of pixel structures 140, the plurality of first shielding vertical lines 150A, and the common electrode line 160 are all disposed on the substrate 110.
  • the layout and connection relationship of the plurality of horizontal signal lines 120, the plurality of vertical signal lines 130, and the plurality of pixel structures 140 are, for example, as shown in FIG. 1, and will not be repeated here.
  • the following mainly describes the signal lines around the single pixel structure 140 in the middle in FIG. 2.
  • the extending direction of the horizontal signal line 120 is, for example, the first direction D1 shown in FIG. 1
  • the extending direction of the vertical signal line 130 is, for example, the second direction D2 shown in FIG. Intersect, but the angle of intersection between the two is not limited to 90 degrees.
  • the vertical signal line 130 may include a first vertical signal line 132 and a second vertical signal line 134 located on one side of the pixel structure 140, wherein the first vertical signal line 132 is a vertical signal line directly connected to one of the pixel structures 140, and The second vertical signal line 134 may be connected to one of the horizontal signal lines 120 in the entire electronic device 100A.
  • a single pixel structure 140 may include an active element 142 and a pixel electrode 144, wherein the three ends of the active element 142 are respectively connected to the corresponding horizontal signal line 120, the first vertical signal line 132 and the pixel electrode 144.
  • the horizontal signal line 120 is, for example, a scan signal line, which is used to provide a scan signal to the pixel structure 140
  • the first vertical signal line 132 is used to provide a data signal to the pixel structure 140.
  • the first vertical signal line 132 and the second vertical signal line 134 are adjacent to each other, they are used to transmit different types of signals. Under such a circuit arrangement, the coupling of the first vertical signal line 132 and the second vertical signal line 134 may affect the signal transmission quality of each other.
  • the vertical projection of the first shielding vertical line 150A on the substrate 110 that is, the layout area in FIG. 2 is located between the vertical projection of the first vertical signal line 132 on the substrate 110 and the second vertical signal line 134.
  • the electronic device 100A may further include a common electrode line 160, and the first shielding vertical line 150A may be connected to the common electrode line 160 to be applied with a common potential.
  • the arrangement of the first shielded vertical line 150A helps to reduce the interference between the first vertical signal line 132 and the second vertical signal line 134 and helps to ensure the first vertical signal line 132 and the second vertical signal line 134 The quality of signal transmission, so that the functions performed by the electronic device (such as screen display, touch sensing, etc.) can meet expectations.
  • the common electrode line 160 includes a first line 162 and a second line 164.
  • the first line 162 and the second line 164 are located between two adjacent lateral signal lines 120 and located on opposite sides of the pixel structure 140.
  • the first shielding longitudinal line 150A may overlap the first line 162 and the second line 164, but it is not limited thereto.
  • the vertical signal line 130 may further include a third vertical signal line 136 and a fourth vertical signal line 138 located on the other side of the pixel structure 140.
  • the pixel structure 140 is located between the second vertical signal line 134 and the fourth vertical signal line 138, for example.
  • the third vertical signal line 136 is located between the fourth vertical signal line 138 and the first vertical signal line 132.
  • the vertical projection of the first vertical signal line 132 and the third vertical signal line 136 on the substrate 110 is located between the vertical projection of the second vertical signal line 134 on the substrate 110 and the vertical projection of the fourth vertical signal line 138 on the substrate 110.
  • the third vertical signal line 136 and the fourth vertical signal line 138 may not be provided with a shielded vertical line, but this is not an example.
  • the third vertical signal line 136 is connected to other pixel structures in the same column, and the fourth vertical signal line 138 can be connected to, for example, a DC potential or one of the horizontal signal lines 120 in the entire electronic device 100A, but not limited to this.
  • the pixel electrode 144 of the pixel structure 140 can overlap the first vertical signal line 132, the second vertical signal line 134, the third vertical signal line 136, the fourth vertical signal line 138, and the A shielded longitudinal wire 150A.
  • the pixel electrode 144 may span the first vertical signal line 132, the first shielding vertical line 150A, and the third vertical signal line 136, and overlap the second vertical signal line 134 of a part width and the fourth vertical signal line 134 of a part width.
  • the first shielding vertical line 150A may be a transparent wiring, so the portion of the pixel electrode 144 overlapping the first shielding vertical line 150A can still be used as an effective display area. In this way, although the electronic device 100A is additionally provided with the first shielding vertical line 150A, the display area is not reduced due to the first shielding vertical line 150A.
  • the pixel electrode 144 may include a vertical main portion MV, a horizontal main portion MH, and a plurality of stripe portions ST, where the vertical main portion MV and the horizontal main portion MH intersect in a cross shape to divide four sub-regions.
  • the stripe portion ST is connected to the vertical main section MV and the horizontal main section MH and extends outward from the vertical main section MV and the horizontal main section MH in a substantially radial manner.
  • the pixel electrode 144 may have other patterns or be regarded as a complete rectangular shape.
  • FIG. 3 is a schematic diagram of an embodiment of the cross-section along the section line A-A in the electronic device of FIG. 2.
  • the common electrode line 160 is disposed on the substrate 110.
  • the film layer where the common electrode line 160 is located may be the same as the film layer where the horizontal signal line 120 is located.
  • the material of the common electrode line 160 and the horizontal signal line 120 includes materials with good conductivity such as metal or alloy.
  • the film layer where the common electrode line 160 and the horizontal signal line 120 are located is closer to the substrate 110 than the film layer where other lines are located, but it is not limited thereto.
  • the first shielding longitudinal line 150A may be a transparent conductive pattern.
  • the material of the first shielding longitudinal wire 150A may be metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, or other suitable oxides, or It is a stacked layer of at least two of the above.
  • the material of the first shielding longitudinal line 150A may be an organic transparent conductive material.
  • the first shielding vertical line 150A since the material of the first shielding vertical line 150A is different from the material of the common electrode line 160, it is less likely to damage the common electrode line 160 and the horizontal signal line during the patterning process of the first shielding vertical line 150A. . Therefore, the first shielding vertical line 150A can be directly stacked on the common electrode line 160 without an interlayer.
  • the insulating layer I1 may be formed on the substrate 110, and then the vertical signal wire 130 may be fabricated.
  • the vertical signal line 130 will intersect the horizontal signal line 120 and the common electrode line 160. Therefore, the arrangement of the insulating layer I1 can separate the vertical signal line 130 from the common electrode line 160 and also separate the vertical signal line 130 from the horizontal signal line 120.
  • the material of the insulating layer I1 may include an inorganic insulating material or an organic insulating material.
  • the inorganic insulating material includes silicon oxide, silicon nitride, or silicon oxynitride, and the organic insulating material includes polymethylmethacrylate. (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or polyimide (PI), etc.
  • the material of the vertical signal line 130 includes a material with good conductivity such as metal or alloy.
  • the insulating layer I2 and I3 are taken as examples, but not This is limited.
  • the materials of the insulating layers I2 and I3 can include inorganic insulating materials or organic insulating materials, where the inorganic insulating materials include silicon oxide, silicon nitride, or silicon oxynitride, and the organic insulating materials include polymethylmethacrylate (PMMA), Polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or polyimide (PI), etc.
  • the material of the filter layer CF may include color filter materials, such as red filter materials, green filter materials, and blue filter materials.
  • the insulating layer I3 may have a thicker thickness to serve as a flat layer, but it is not limited to this.
  • the pixel electrode 144 may be formed on the insulating layer I3.
  • the material of the pixel electrode 144 may include a transparent conductive material.
  • the transparent conductive material may include metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, or other suitable oxides, or at least two of the foregoing The stacked layers.
  • the transparent conductive material may be an organic transparent material.
  • the material of the pixel electrode 144 may be the same as the material of the first shielding vertical line 150A.
  • FIG. 4 is a schematic diagram of another embodiment of the cross section along the section line A-A in the electronic device of FIG. 2.
  • the first shielded vertical line 150A, the common electrode line 160, the insulating layer I1, the vertical signal line 130, the insulating layer I2, the filter layer CF, the insulating layer I3, and the pixel electrode 144 are sequentially stacked on the substrate 110.
  • the cross-section of FIG. 4 is different from the cross-section of FIG. 3 in the stacking order of the first shielding vertical line 150A and the common electrode line 160. Therefore, the material and stacking relationship of each film layer in the cross-section of FIG. 4 can be referred to the related description of FIG. 3 and will not be repeated.
  • FIG. 5 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100B in FIG. 5 is substantially similar to the electronic device 100A in FIG. 2. Therefore, the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100B may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150B, and a second shielded vertical line 152B.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • Substrate 110, horizontal signal line 120, first vertical signal line 132, second vertical signal line 134, third vertical signal line 136, fourth vertical signal line 138, pixel structure 140, first shielded vertical line 150B and common electrode line The relative relationship of 160 can be referred to the embodiment in FIG. 2 and will not be repeated here. Specifically, this embodiment is different from the embodiment in FIG. 2 in that the electronic device 100B further includes a second shielded vertical line 152B, and the length of the first shielded vertical line 150B is designed differently.
  • the first shielded vertical line 150B is located between the first vertical signal line 132 and the second vertical signal line 134, and the second shielded vertical line 152B is located between the third vertical signal line 136 and the fourth vertical signal line 138 between.
  • the first longitudinal signal line 132 is located between the first shielded longitudinal line 150B and the second shielded longitudinal line 150B
  • the third longitudinal signal line 136 is located between the first longitudinal signal line 132 and the second shielded longitudinal line 152B.
  • the pixel structure 140 includes an active element 142 and a pixel electrode 144, and the second shielding vertical line 152B and the first shielding vertical line 150B are located on opposite sides of the pixel electrode 144.
  • the pixel electrode 144 may extend across the first shielding vertical line 150B and the second shielding vertical line 152B to the second vertical signal line 134 and the fourth vertical signal line 138.
  • the first shielding longitudinal line 150B and the second shielding longitudinal line 152B are symmetrically distributed, for example, in the pixel structure 140.
  • the distance from the first vertical shielding line 150B to the central axis of the pixel electrode 144 may be substantially the same as the distance from the second vertical shielding line 152B to the central axis of the pixel electrode 144, but is not limited thereto.
  • first shielding vertical line 150B and the second shielding vertical line 152B may both cross the first line 162 of the common electrode line 160 but not intersect the second line 164 of the common electrode line 160.
  • first shielding longitudinal line 150B and the second shielding longitudinal line 152B may be separated from the second line 164 by a distance.
  • first vertical shielding line 150B and the second vertical shielding line 152B may both cross the first line 162 and overlap the second line 164.
  • the first shielding longitudinal line 150B and the second shielding longitudinal line 152B may both overlap the second line 164, but both are separated from the first line 162 by a distance.
  • first vertical shielding wire 150B and the second vertical shielding wire 152B can contact one or both of the first wire 162 and the second wire 164, they can receive a common potential and provide a shielding effect.
  • the second shielding vertical line 152B may be a transparent conductive pattern, so the pixel structure 140 can also display effectively in the area of the second shielding vertical line 152B, without reducing the pixel structure 140 due to the arrangement of the second shielding vertical line 152B. The effective display area.
  • FIG. 6 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100C in FIG. 6 is substantially similar to the electronic device 100B in FIG. 5, so the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100C may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150C, and a second shielded vertical line 152C.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • the relative relationship between the vertical line 152C and the common electrode line 160 can refer to the foregoing embodiment, and will not be repeated here.
  • the present embodiment is different from the embodiment of FIG. 5 in that the width of the first shielding longitudinal line 150C and the second shielding longitudinal line 152C in the electronic device 100C are different.
  • the first shielding vertical wire 150C has an extension portion 150C1 and an overlapping portion 150C2.
  • the extension portion 150C1 extends in the gap between the first vertical signal line 132 and the second vertical signal line 134 and contacts the common electrode line 160.
  • the overlapping portion 150C2 is connected to the extension portion 150C1 and overlaps the first vertical signal line 132.
  • the second shielding vertical line 152C also has an extension portion 152C1 and an overlapping portion 152C2.
  • the extension portion 152C1 extends in the gap between the third vertical signal line 136 and the fourth vertical signal line 138 and contacts the first of the common electrode line 160.
  • Line 162 and the overlapping portion 152C2 is connected to the extension portion 152C1 and overlaps the third vertical signal line 136.
  • the overlapping portion 150C2 is connected to the middle section of the extending portion 150C1, and the overlapping portion 152C2 is connected to the middle section of the extending portion 152C1, but it is not limited thereto.
  • FIG. 7 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100D in FIG. 7 is substantially similar to the electronic device 100C in FIG. 6. Therefore, the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100D may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150D, and a second shielded vertical line 152D.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • the relative relationship between the substrate 110, the horizontal signal line 120, the first vertical signal line 132, the second vertical signal line 134, the third vertical signal line 136, the fourth vertical signal line 138, the pixel structure 140, and the common electrode line 160 can refer to the aforementioned Examples are not repeated here.
  • the present embodiment is different from the embodiment in FIG. 6 in that the design of the overlapping portion of the first shielding longitudinal line 150D and the second shielding longitudinal line 152D in the electronic device 100D is different.
  • the first shielding vertical line 150D has an extension portion 150D1 and an overlapping portion 150D2, and the extension portion 150D1 extends in the gap between the first vertical signal line 132 and the second vertical signal line 134 and contacts the first vertical signal line 160.
  • a line 162 and the overlapping portion 150D2 is connected to the extension portion 150D1 and overlaps the first vertical signal line 132.
  • the overlapping portion 150D2 of the first shielding vertical line 150D may extend toward the second line 164 of the common electrode line 160 to overlap the second line 164.
  • the second shielding vertical line 152D also has an extension portion 152D1 and an overlapping portion 152D2.
  • the extension portion 152D1 extends in the gap between the third vertical signal line 136 and the fourth vertical signal line 138 and contacts the first line 162 of the common electrode line 160 , And the overlap portion 152D2 is connected to the extension portion 152D1 and overlaps the third vertical signal line 136.
  • the overlapping portion 152D2 of the second shielding vertical line 152D may extend toward the second line 164 of the common electrode line 160 to overlap the second line 164.
  • FIG. 8 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100E in FIG. 8 is substantially similar to the electronic device 100B in FIG. 5, so the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100E may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150B, a second shielded vertical line 152B, and a shielded horizontal line 154E.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • the relative relationship of 160 can refer to the embodiment of FIG. 2 and the arrangement of the first shielding longitudinal line 150B and the second shielding longitudinal line 152B can refer to the embodiment of FIG. 5, and will not be repeated here.
  • this embodiment is different from the embodiment in FIG. 5 in that the electronic device 100E further includes a shielding horizontal line 154E.
  • the horizontal shielding line 154E extends laterally from the first vertical shielding line 150B, spans the first vertical signal line 132 and the third vertical signal line 136, and is connected to the second vertical shielding line 152B.
  • the horizontal shielding wire 154E is connected to the middle section of the first vertical shielding wire 150B and to the middle section of the second vertical shielding wire 152B. Therefore, the horizontal shielding wire 154E, the first vertical shielding wire 150B, and the second horizontal shielding wire 152B constitute H Font pattern.
  • the pixel electrode 144 of the pixel structure 140 has, for example, a horizontal main portion MH, and the orthographic projection of the shielding horizontal line 154E on the substrate 110 can overlap the orthographic projection of the horizontal main portion MH on the substrate 110, but not Is limited.
  • the shielding horizontal line 154E may be a transparent conductive pattern, so the pixel structure 140 can effectively display in the area of the shielding horizontal line 154E, without reducing the effective display area of the pixel structure 140 due to the arrangement of the shielding horizontal line 154E.
  • the shielding horizontal line 154E connects the first shielding vertical line 150B and the second shielding horizontal line 152B together, only one of the first shielding vertical line 150B and the second shielding horizontal line 152B may be connected to the common electrode Line 160.
  • only one of the first shielding vertical line 150B and the second shielding horizontal line 152B may be connected to the first line 162 of the common electrode line 160, the second line 164 of the common electrode line 160, or both The first line 162 and the second line 164 of the electrode line 160 are shared.
  • FIG. 9 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100F in FIG. 9 is substantially similar to the electronic device 100E in FIG. 8. Therefore, the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100F may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150B, a second shielded vertical line 152B, a shielded horizontal line 154E, and a third shielded vertical line. Line 156F.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • the relative relationship between the substrate 110, the horizontal signal line 120, the first vertical signal line 132, the second vertical signal line 134, the third vertical signal line 136, the fourth vertical signal line 138, the pixel structure 140, and the common electrode line 160 can be referred to the figure.
  • the arrangement of the first shielding longitudinal line 150B and the second shielding longitudinal line 152B can refer to the embodiment of FIG. 5
  • the arrangement of the shielding horizontal line 154E can refer to the embodiment of FIG. 8, and will not be repeated here.
  • this embodiment is different from the embodiment of FIG. 5 in that the electronic device 100F further includes a third shielded vertical line 156F.
  • the third longitudinal shielding wire 156F is located between the first longitudinal shielding wire 150B and the second longitudinal shielding wire 152B.
  • the third shielding vertical line 156F may be connected to the shielding horizontal line 154E, and the third shielding vertical line 156F and the shielding horizontal line 154E are interlaced to form a cross shape, but it is not limited thereto.
  • the pixel electrode 144 of the pixel structure 140 has, for example, a vertical main portion MV and a horizontal main portion MH, wherein the orthographic projection of the third shielding longitudinal line 156F on the substrate 110 can overlap the vertical main portion MV on the substrate 110
  • the orthographic projection, and the orthographic projection of the shielding horizontal line 154E on the substrate 110 may overlap the orthographic projection of the transverse main portion MH on the substrate 110, but is not limited to this.
  • the shielding horizontal line 154E and the third shielding vertical line 156F can be transparent conductive patterns, so the pixel structure 140 can also be effectively displayed in the area of the shielding horizontal line 154E, instead of the shielding horizontal line 154E and the third shielding vertical line.
  • the setting of 156F reduces the effective display area of the pixel structure 140.
  • FIG. 10 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100G in FIG. 10 is substantially similar to the electronic device 100A in FIG. 2. Therefore, the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100G may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150A, and a shielded horizontal line 154G.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • Substrate 110, horizontal signal line 120, first vertical signal line 132, second vertical signal line 134, third vertical signal line 136, fourth vertical signal line 138, pixel structure 140, first shielded vertical line 150A and common electrode line The relative relationship of 160 can be referred to the embodiment in FIG. 2 and will not be repeated here.
  • this embodiment is different from the embodiment of FIG. 2 in that the electronic device 100G further includes a shielding horizontal line 154G.
  • the horizontal shielding line 154G extends laterally from the first vertical shielding line 150A to cross the first vertical signal line 132 and the horizontal shielding line 154G is connected to the end of the first vertical shielding line 150A.
  • the orthographic projection of the shielding horizontal line 154G on the substrate 110 can overlap the orthographic projection of the second line 164 of the common electrode line 160 on the substrate 110, and the orthographic projection of the second line 164 of the common electrode line 160 on the substrate 110 can be set. within.
  • FIG. 11 is a schematic diagram of another embodiment of the cross section along the section line B-B in the electronic device of FIG. 2.
  • the common electrode line 160, the shielding horizontal line 154G, the insulating layer I1, the vertical signal line 130, the insulating layer I2, the filter layer CF, the insulating layer I3 and the pixel electrode 144 are sequentially stacked on the substrate 110, wherein the shield The horizontal line 154G and the first shielding vertical line 150A are the same film layer.
  • the material of each film layer of this embodiment please refer to the description of FIG. 3 and FIG. 4, and will not be repeated.
  • FIG. 3 and FIG. 4 please refer to the description of FIG. 3 and FIG. 4, and will not be repeated.
  • the section SEC1 represents the stacking order of the respective film layers when the horizontal shielding line 154G overlaps both the vertical signal line 130 and the common electrode line 160.
  • the section SEC2 is represented as when the first shielding vertical line 150A and the shielding horizontal line 154G overlap the common electrode line 160, the film layer stacking sequence, wherein the film layer number and film layer stacking sequence of section SEC2 are approximately the same as that of FIG. 3 Section structure.
  • the horizontal shielding line 154G overlaps the first vertical signal line 132 in the thickness direction.
  • an insulating layer I1 is provided between the shielding horizontal line 154G and the first vertical signal line 132. Therefore, the shielding horizontal line 154G and the first vertical signal line 132 are not short-circuited with each other.
  • FIG. 12 is a schematic diagram of another embodiment of the cross-section along the section line B-B in the electronic device of FIG. 2.
  • the shielding horizontal line 154G, the common electrode line 160, the insulating layer I1, the vertical signal line 130, the insulating layer I2, the filter layer CF, the insulating layer I3 and the pixel electrode 144 are sequentially stacked on the substrate 110.
  • the cross-section of FIG. 12 is different from the cross-section of FIG. 11 in the stacking sequence of the shield horizontal line 154G and the common electrode line 160. Therefore, the material and stacking relationship of each film layer in the cross-section of FIG. 12 can be referred to the related description of FIG. 11 and will not be repeated.
  • the section SEC1 represents the stacking order of the respective film layers when the shield horizontal line 154G overlaps both the vertical signal line 130 and the common electrode line 160.
  • the section SEC2 is represented as when the first shielding vertical line 150A and the shielding horizontal line 154G overlap the common electrode line 160, the film layer stacking order, wherein the number of film layers and the film layer stacking order of the section SEC2 are roughly the same as that of FIG. 4 Section structure.
  • the overlapping relationship between the shielding horizontal line 154G and the vertical signal line 130 and the film layer stacking order can be applied to any of the embodiments in FIGS. 6 to 9.
  • the common electrode line 160 in the segment SEC1 is removed, it can be regarded as the cross-sectional structure of the overlapping portions 150C2 and 150D2 overlapping the first vertical signal line 132 in the embodiments of FIGS. 6 and 7.
  • the cross-sectional structure of the overlapping portion 150C2 and 150D2 overlapping the first vertical signal line 132 may include the substrate 110, the overlapping portion 150C2 or 150D2, the insulating layer I1, the first vertical signal line 132, the insulating layer I2, and the filter layer stacked in sequence. CF, insulating layer I3 and pixel electrode 144.
  • the cross-sectional structure of the overlapping portions 152C2 and 152D2 overlapping the third vertical signal line 134 in the embodiments of FIGS. 6 and 7 and the shielding horizontal line 154E in the embodiments of FIGS. 8 and 9 overlap the first vertical signal line 132 and the third vertical direction.
  • the cross-sectional structure of the signal line 136 The cross-sectional structure of the signal line 136.
  • the cross-sectional structure of the overlapping portion 150C2 and 150D2 overlapping the third vertical signal line 134 may include the substrate 110, the overlapping portion 150C2 or 150D2, the insulating layer I1, the third vertical signal line 134, the insulating layer I2, and the filter layer stacked in sequence. CF, insulating layer I3 and pixel electrode 144.
  • FIG. 13 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100H of FIG. 13 is substantially similar to the electronic device 100G of FIG. 10, so the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100H may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150A, a shielded horizontal line 154G, and a second shielded vertical line 152B.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • the relative relationship of 160 can refer to the foregoing embodiment, and will not be repeated here.
  • this embodiment is different from the embodiment of FIG. 10 in that the electronic device 100H further includes a second shielded vertical line 152H.
  • the first shielded vertical line 150A is located between the first vertical signal line 132 and the second vertical signal line 134
  • the second shielded vertical line 152H is located between the third vertical signal line 136 and the fourth vertical signal line 138. between.
  • the horizontal shielding line 154G is connected between the end of the first vertical shielding line 150A and the end of the second vertical shielding line 152H to form a U-shaped pattern, but not limited to this.
  • the pixel structure 140 includes an active element 142 and a pixel electrode 144, and the first shielding vertical line 150A and the second shielding vertical line 152H are located on opposite sides of the pixel electrode 144.
  • the pixel electrode 144 may traverse the first shielding vertical line 150A and the second shielding vertical line 152H.
  • the first shielding vertical line 150A and the second shielding vertical line 152H are made of transparent conductive material, so the area where the first shielding vertical line 150A and the second shielding vertical line 152H are located will not cover the display area of the pixel structure 140, which helps To ensure the display effect of the electronic device 100H.
  • only one or both of the shielding horizontal line 154G, the first shielding vertical line 150A, and the second shielding vertical line 152H may overlap and contact the common electrode line 160.
  • first shielding longitudinal line 150A and the second shielding longitudinal line 152H may have different lengths, so that one of the first shielding longitudinal line 150A and the second shielding longitudinal line 152H crosses the first line 162 and the other is with the A line 162 is separated by a distance.
  • the horizontal shielding line 154G connected between the first vertical shielding line 150A and the second vertical shielding line 152H may not overlap the second line 164.
  • FIG. 14 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100I in FIG. 14 is substantially similar to the electronic device 100H in FIG. 13. Therefore, the same components described in the two embodiments can refer to the foregoing content.
  • the electronic device 100I may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150A, a shielded horizontal line 154G, a second shielded vertical line 152H, and a shielded horizontal line 154E .
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • Substrate 110, horizontal signal line 120, first vertical signal line 132, second vertical signal line 134, third vertical signal line 136, fourth vertical signal line 138, pixel structure 140, first shielded vertical line 150A and common electrode line The relative relationship of 160 can refer to the foregoing embodiment, and will not be repeated here.
  • this embodiment is different from the embodiment in FIG. 13 in that the electronic device 100H further includes a shielding horizontal line 154E, and the arrangement of the shielding horizontal line 154E is substantially the same as that of the shielding horizontal line 154E in FIG. 8.
  • the horizontal shielding line 154E extends laterally from the first vertical shielding line 150A, spans the first vertical signal line 132 and the third vertical signal line 136 and is connected to the second vertical shielding line 152H.
  • the horizontal shielding wire 154E is connected to the middle section of the first vertical shielding wire 150A and to the middle section of the second vertical shielding wire 152H.
  • the pixel electrode 144 of the pixel structure 140 has, for example, a horizontal main portion MH and a vertical main portion MV.
  • the horizontal main portion MH and the vertical main portion MV intersect in a cross shape, and the orthographic projection of the shielding horizontal line 154E on the substrate 110 can overlap the horizontal main portion MH.
  • the orthographic projection on the substrate 110 but not limited
  • FIG. 15 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100J in FIG. 15 is substantially similar to the electronic device 100I in FIG. 14. Therefore, the same components described in the two embodiments can refer to the foregoing content.
  • the electronic device 100J may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150A, a shielded horizontal line 154G, a second shielded vertical line 152H, and a shielded horizontal line 154E With the third shielding longitudinal line 156F.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • Substrate 110, horizontal signal line 120, first vertical signal line 132, second vertical signal line 134, third vertical signal line 136, fourth vertical signal line 138, pixel structure 140, first shielded vertical line 150A and common electrode line The relative relationship of 160 can refer to the foregoing embodiment, and will not be repeated here.
  • this embodiment is different from the embodiment in FIG. 13 in that the electronic device 100H further includes a third shielded longitudinal line 156F, wherein the arrangement of the third shielded longitudinal line 156F is substantially the same as that of the third shield in FIG. 9 Vertical line 156F.
  • the third longitudinal shielding wire 156F is located between the first longitudinal shielding wire 150A and the second longitudinal shielding wire 152H.
  • the third shielding vertical line 156F may be connected to the shielding horizontal line 154E, and the third shielding vertical line 156F and the shielding horizontal line 154E are interlaced to form a cross shape, but it is not limited thereto.
  • the pixel electrode 144 of the pixel structure 140 has, for example, a vertical main portion MV and a horizontal main portion MH, wherein the orthographic projection of the third shielding longitudinal line 156F on the substrate 110 can overlap the vertical main portion MV on the substrate 110
  • the orthographic projection, and the orthographic projection of the shielding horizontal line 154E on the substrate 110 may overlap the orthographic projection of the transverse main portion MH on the substrate 110, but is not limited to this.
  • FIG. 16 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100K in FIG. 16 is substantially similar to the electronic device 100H in FIG. 13, so the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100K may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150K, a shielded horizontal line 154G, and a second shielded vertical line 152K.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • Substrate 110 horizontal signal line 120, first vertical signal line 132, second vertical signal line 134, third vertical signal line 136, fourth vertical signal line 138, pixel structure 140, first shielded vertical line 150A and common electrode line
  • the relative relationship of 160 can refer to the foregoing embodiment, and will not be repeated here.
  • the layout and pattern design of the first shielding longitudinal line 150K and the second shielding longitudinal line 152K are substantially the same as the first shielding longitudinal line 150C and the second shielding longitudinal line 152C of FIG. 6.
  • the first shielding vertical line 150K and the first shielding vertical line 152K may extend to the second line 164 overlapping the common electrode line 160 and are connected together by the shielding horizontal line 154G at the ends of the two.
  • the first shielding longitudinal line 150K has an extension portion 150K1 and an overlapping portion 150K2.
  • the extension portion 150K1 extends in the gap between the first longitudinal signal line 132 and the second longitudinal signal line 134 and contacts the first line 162 and the common electrode line 160.
  • the second line 164, and the overlapping portion 150K2 is connected to the extension portion 150K1 and overlaps the first vertical signal line 132.
  • the second shielded vertical line 152K also has an extension portion 152K1 and an overlapping portion 152K2.
  • the extension portion 152K1 extends in the gap between the third vertical signal line 136 and the fourth vertical signal line 138 and contacts the first of the common electrode line 160.
  • Line 162 and the overlapping portion 152K2 is connected to the extension portion 152K1 and overlaps the third vertical signal line 136.
  • the overlapping portion 150K2 is connected to the middle section of the extending portion 150K1
  • the overlapping portion 152K2 is connected to the middle section of the extending portion 152K1, but it is not limited thereto.
  • FIG. 17 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100L in FIG. 17 is substantially similar to the electronic device 100H in FIG. 13. Therefore, the same components described in the two embodiments can be referred to the foregoing content.
  • the electronic device 100L may include a substrate 110, a plurality of horizontal signal lines 120, a plurality of vertical signal lines 130, a common electrode line 160, a first shielded vertical line 150L, a shielded horizontal line 154G, and a second shielded vertical line 152L.
  • the vertical signal line 130 may include a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138.
  • Substrate 110 horizontal signal line 120, first vertical signal line 132, second vertical signal line 134, third vertical signal line 136, fourth vertical signal line 138, pixel structure 140, first shielded vertical line 150A and common electrode line
  • the relative relationship of 160 can refer to the foregoing embodiment, and will not be repeated here.
  • first shielding longitudinal line 150L and the second shielding longitudinal line 152L are substantially the same as those of the first shielding longitudinal line 150D and the second shielding longitudinal line 152D in FIG. 7.
  • the first shielding vertical line 150L may include an extension portion 150L1 located between the first vertical signal line 132 and the second vertical signal line 134 and an overlapping portion 150L2 overlapping the first vertical signal line 132.
  • the second shielding vertical line 152L may include an extension portion 152L1 located between the third vertical signal line 136 and the fourth vertical signal line 138 and an overlapping portion 152L2 overlapping the third vertical signal line 136.
  • the end of the first vertical shielding line 150L and the end of the second vertical shielding line 152L are connected by a shielding horizontal line 154G.
  • FIG. 18 is a partial schematic diagram of an electronic device according to an embodiment of the invention.
  • the electronic device 100M of FIG. 18 includes a substrate 110, a horizontal signal line 120, a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, a fourth vertical signal line 138, a pixel structure 140, and a first shield
  • the vertical line 150M, the second shielding vertical line 152M, the shielding electrode 158M, and the common electrode line 160 including the first line 162 and the second line 164.
  • the substrate 110, the horizontal signal line 120, the first vertical signal line 132, the second vertical signal line 134, the third vertical signal line 136, the fourth vertical signal line 138, the pixel structure 140, and the common electrode line 160 It is substantially the same as the embodiment in FIG. 2, so the specific structure, material and relative arrangement relationship of these components can be referred to the related description of FIG. 2, and will not be repeated here.
  • the vertical projection of the first vertical shield line 150M on the substrate 110 is located between the vertical projection of the first vertical signal line 132 on the substrate 110 and the vertical projection of the second vertical signal line 134 on the substrate 110, and the second shield The vertical projection of the vertical line 152M on the substrate 110 is located between the vertical projection of the third vertical signal line 136 on the substrate 110 and the vertical projection of the fourth vertical signal line 138 on the substrate 110.
  • the first shielding vertical line 150M and the second shielding vertical line 152M are connected to the shielding electrode 158M, and the first shielding vertical line 150M and the second shielding vertical line 152M can extend toward the corresponding horizontal signal line 120 and cross the common electrode line 160.
  • the shielding electrode 158M is, for example, a full-surface electrode, and traverses the first vertical signal line 132 and the third vertical signal line 136.
  • the shield electrode 158M is substantially located between the second vertical signal line 134 and the fourth vertical signal line 138 without overlapping the second vertical signal line 134 and the fourth vertical signal line 138.
  • the orthographic projection of the shield electrode 158M on the substrate 110 overlaps the orthographic projection of the pixel electrode 144 of the pixel structure 140 on the substrate 110.
  • the shielding electrode 158M, the first shielding longitudinal line 150M and the second shielding longitudinal line 152M are integrated, and may be made of, for example, a transparent conductive material. Therefore, although the shielding electrode 158M overlaps most of the area of the pixel electrode 144, it does not affect the effective display area of the pixel structure 140.
  • FIG. 19 is a partial schematic diagram of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100N of FIG. 19 includes a substrate 110, a horizontal signal line 120, a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, a fourth vertical signal line 138, an active element 142 and a pixel electrode.
  • the substrate 110, the horizontal signal line 120, the first vertical signal line 132, the second vertical signal line 134, the third vertical signal line 136, the fourth vertical signal line 138, the pixel structure 140, and the common electrode line 160 The configuration, structure, and stacking sequence of is approximately the same as the embodiment in FIG. 2, so please refer to the description of FIG. 2 for related description.
  • the orthographic projection of the first shielding longitudinal line 150N on the substrate 110 is located between the orthographic projection of the first longitudinal signal line 132 on the substrate 110 and the orthographic projection of the second longitudinal signal line 134 on the substrate 110.
  • the orthographic projection of the second shielding longitudinal line 152N on the substrate 110 is located between the orthographic projection of the third longitudinal signal line 136 on the substrate 110 and the orthographic projection of the fourth longitudinal signal line 138 on the substrate 110.
  • the first vertical shielding line 150N and the second vertical shielding line 152N both cross and intersect the horizontal signal line 120 and the first line 162 and the second line 164 of the common electrode line 160.
  • the horizontal signal line 120 and the common electrode line 160 can be made of the same film.
  • the signal transmitted by the horizontal signal line 120 is the scan signal provided to the active device 142, and the signal transmitted by the common electrode line 160 is a common potential.
  • the first shielded vertical line 150N and the second shielded vertical line 152N intersecting the horizontal signal line 120 and the common electrode line 160 must avoid electrical short circuit with the horizontal signal line 120 and the common electrode line 160. Therefore, the film layers of the first shielding vertical line 150N and the second shielding vertical line 152N may be different from the film layers of the lateral signal line 120 and the common electrode line 160.
  • the first shielding vertical line 150N and the second shielding vertical line 152N may be electrically connected to the common electrode line 160 through the conductive structure TH to receive the common potential, but it is not limited to this.
  • the conduction structure TH in the electronic device 100N may be omitted, and the first shielded vertical line 150N and the second shielded vertical line 152N may extend to the driving circuit of the electronic device 100N (for example, the driving circuit shown in FIG. 1 Circuit IC), and the driving circuit directly provides the required potential to the first shielding vertical line 150N and the second shielding vertical line 152N.
  • FIG. 20 schematically shows an embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line C-C
  • FIG. 21 schematically shows an embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line D-D.
  • the pixel electrode 144 is sequentially stacked on the substrate 110.
  • the insulating layer I0, the insulating layer I1, the insulating layer I2, and the insulating layer I3 can be made of inorganic insulating materials or organic insulating materials.
  • the inorganic insulating materials include silicon oxide, silicon nitride, or silicon oxynitride
  • the organic insulating materials include Polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylphenol (PVP) or polyimide (PI), etc.
  • the material of the filter layer CF may include color filter materials, such as red filter materials, green filter materials, and blue filter materials.
  • the materials of the common electrode line 160 and the first vertical signal line 132 include metal or alloy.
  • the material of the first shielding vertical line 150N and the pixel electrode 144 includes a transparent conductive material.
  • the film layer of the horizontal signal line 120 in FIG. 19 is the same as the film layer of the common electrode line 160, and the stacking manner of the second shielding vertical line 152N in the cross-sectional structure in FIG. 19 may be the same as that of the first shielding vertical line 150N.
  • the through structure TH can electrically connect the first shielding vertical line 150N with the first line 162 of the common electrode line 160, and the conduction structure TH is a conductive structure penetrating the insulating layer I0.
  • the film layer of the first shielding vertical line 150N is different from the film layer of the common electrode line 160 but can be electrically connected to the common electrode line 160.
  • the common electrode line 160 and the horizontal signal line 120 have the same film layer, the first shielding vertical line 150N will not be connected to the horizontal signal line 120, and the horizontal signal line 120 and the common electrode line 160 can maintain independent electrical properties.
  • FIG. 22 schematically shows another embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line CC
  • FIG. 23 schematically shows another embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line DD
  • the common electrode line 160, the insulating layer I1, the first shielding vertical line 150N, the insulating layer I2, the filter layer CF, the insulating layer I3, and the pixel electrode 144 are sequentially stacked on the substrate 110 .
  • the film layer of the horizontal signal line 120 in FIG. 19 is the same as the film layer of the common electrode line 160, and the stacking manner of the second shielding vertical line 152N in the cross-sectional structure in FIG. 19 may be the same as that of the first shielding vertical line 150N.
  • the material of each film layer can be referred to the related description of FIG. 20 and FIG. 21.
  • the through structure TH can electrically connect the first shielding vertical line 150N and the first line 162 of the common electrode line 160, and the conduction structure TH is a conductive structure penetrating the insulating layer I1.
  • the film layer of the first shielding vertical line 150N is different from the film layer of the common electrode line 160 but can be electrically connected to the common electrode line 160.
  • the first shielding vertical line 150N will not be connected to the horizontal signal line 120, but the horizontal signal line 120 and the common electrode line 160 can maintain independent electrical properties.
  • the first vertical signal line 132 and the first shielding vertical line 150N are both sandwiched between the insulating layer I1 and the insulating layer I2.
  • the first vertical signal line 132 and the first shielding vertical line 150N may be made of different film layers. Therefore, the first longitudinal signal line 132 and the first shielding longitudinal line 150N may be members of different materials.
  • the material of the first vertical signal line 132 may include materials such as metal and alloy, and the material of the first shielding vertical line 150N may include transparent conductive materials such as metal oxides and accumulated conductive materials.
  • FIG. 24 schematically shows another embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line CC
  • FIG. 25 schematically shows still another embodiment of the cross-sectional structure of the electronic device of FIG. 19 along the section line DD
  • the CF, the insulating layer 13 and the pixel electrode 144 are sequentially stacked on the substrate 110.
  • the film layer of the common electrode line 160 is the same as the film layer of the common electrode line 160, and the stacking manner of the second shielding vertical line 152N in the cross-sectional structure in FIG. 19 may be the same as that of the first shielding vertical line 150N.
  • the material of each film layer can be referred to the related description of FIG. 20 and FIG. 21.
  • the film layer of the first shielding vertical line 150N is disposed on the insulating layer I2, and the film layer of the common electrode line 160 is disposed under the insulating layer I1. Therefore, the conductive structure TH for electrically connecting the first shielded vertical line 150N to the common electrode line 160 may penetrate the insulating layer I1 and the insulating layer I2.
  • FIG. 20, FIG. 22, and FIG. 24 respectively show implementations of the first shielding longitudinal wire 150N in different stacking sequences, but the disclosure is not limited thereto.
  • the conduction structure TH may be omitted in some embodiments, and the first shielding vertical line 150N and the second shielding vertical line 152N may extend to the driving circuit provided around the electronic device 100N to receive the required signal.
  • FIG. 26 is a schematic top view of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100O of FIG. 26 includes a substrate 110, a horizontal signal line 120, a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138, including active elements 142 and pixel electrodes
  • the substrate 110, the horizontal signal line 120, the first vertical signal line 132, the second vertical signal line 134, the third vertical signal line 136, the fourth vertical signal line 138, the pixel structure 140, and the common electrode line 160 The configuration, structure, and stacking sequence of is approximately the same as that of the embodiment in FIG. 19, so for related description, please refer to FIG. 19 and the description of related content.
  • the orthographic projection of the first shielding longitudinal line 150O on the substrate 110 is located between the orthographic projection of the first longitudinal signal line 132 on the substrate 110 and the orthographic projection of the second longitudinal signal line 134 on the substrate 110.
  • the orthographic projection of the second shielding longitudinal line 152O on the substrate 110 is located between the orthographic projection of the third longitudinal signal line 136 on the substrate 110 and the orthographic projection of the fourth longitudinal signal line 138 on the substrate 110.
  • the first shielded vertical line 150O and the second shielded vertical line 152O do not overlap the horizontal signal line 120, nor do they overlap the second line 164 of the common electrode line 160.
  • first shielding vertical line 150O and the second shielding vertical line 152O may be different from the film layer of the common electrode line 160.
  • the first shielding vertical line 150O and the second shielding vertical line 152O may be connected to the first line 162 of the common electrode line 160 through a conductive structure to receive a common potential.
  • the stacking manner of the first shielding longitudinal line 150O and the second shielding longitudinal line 152O in the cross-sectional structure can refer to the description of FIGS. 20 to 24.
  • the cross-sectional structure of FIG. 20 to FIG. 24 can also be used as an embodiment of the electronic device 100O.
  • FIG. 27 is a schematic top view of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100P of FIG. 27 includes a substrate 110, a horizontal signal line 120, a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138, including active elements 142 and pixel electrodes
  • the substrate 110, the horizontal signal line 120, the first vertical signal line 132, the second vertical signal line 134, the third vertical signal line 136, the fourth vertical signal line 138, the pixel structure 140, and the common electrode line 160 The configuration, structure, and stacking sequence of is approximately the same as that of the embodiment in FIG. 2, so for related description, please refer to FIG. 2 and the description of related content.
  • the orthographic projection of the first shielding longitudinal line 150P on the substrate 110 is located between the orthographic projection of the first longitudinal signal line 132 on the substrate 110 and the orthographic projection of the second longitudinal signal line 134 on the substrate 110.
  • the orthographic projection of the second shielding longitudinal line 152P on the substrate 110 is located between the orthographic projection of the third longitudinal signal line 136 on the substrate 110 and the orthographic projection of the fourth longitudinal signal line 138 on the substrate 110.
  • the horizontal shielding line 154P extends laterally from the first vertical shielding line 150P to straddle the first vertical signal line 132 and the third vertical signal line 136, and the horizontal shielding line 154P is connected to the first vertical shielding line 150P and the second vertical shielding line Between 152P.
  • the orthographic projection of the shielding horizontal line 154P on the substrate 110 may overlap the orthographic projection of the second line 164 of the common electrode line 160 on the substrate 110.
  • FIG. 28 schematically shows an embodiment of the cross-sectional structure of the electronic device of FIG. 27 along the section line E-E. It can be seen from FIGS. 27 and 28 that the first shielded vertical line 150P and the shielded horizontal line 154P, the insulating layer I0, the common electrode line 160, the insulating layer I1, the first vertical signal line 132, the insulating layer I2, the filter layer CF, the insulating layer The layer 13 and the pixel electrode 144 are sequentially stacked on the substrate 110.
  • the insulating layer I0, the insulating layer I1, the insulating layer I2, and the insulating layer I3 can be made of inorganic insulating materials or organic insulating materials.
  • the inorganic insulating materials include silicon oxide, silicon nitride, or silicon oxynitride, and the organic insulating materials include Polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylphenol (PVP) or polyimide (PI), etc.
  • the material of the filter layer CF may include color filter materials, such as red filter materials, green filter materials, and blue filter materials.
  • the materials of the common electrode line 160 and the first vertical signal line 132 include metal or alloy.
  • the materials of the first shielding vertical line 150P, the shielding horizontal line 154P, and the pixel electrode 144 include a transparent conductive material.
  • FIG. 27 is the same as the film layer of the common electrode line 160, and the stacking method of the second shielding vertical line 152P in the cross-sectional structure in FIG. 27 may be the same as that of the first shielding vertical line 150P.
  • FIG. 28 it can be seen from FIG. 28 that the shielding horizontal line 154P and the first vertical signal line 132 overlap in the thickness direction D3.
  • FIG. 29 schematically shows an embodiment of the cross-sectional structure of the electronic device of FIG. 27 along the section line E-E. 27 and 29, the common electrode line 160, the insulating layer I1, the first vertical signal line 132, the insulating layer I2, the first shielding vertical line 150P and the shielding horizontal line 154P, the filter layer CF, the insulating layer I3, and the pixel
  • the electrodes 144 are sequentially stacked on the substrate 110.
  • the insulating layer I1, the insulating layer I2, and the insulating layer I3 can be made of inorganic insulating materials or organic insulating materials.
  • the inorganic insulating materials include silicon oxide, silicon nitride, or silicon oxynitride, and the organic insulating materials include polymethacrylic acid. Methyl ester (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or polyimide (PI), etc.
  • the material of the filter layer CF may include color filter materials, such as red filter materials, green filter materials, and blue filter materials.
  • the materials of the common electrode line 160 and the first vertical signal line 132 include metal or alloy.
  • the materials of the first shielding vertical line 150P, the shielding horizontal line 154P, and the pixel electrode 144 include a transparent conductive material.
  • the shielding horizontal line 154P overlaps the first vertical signal line 132 in the thickness direction D3, and at least an insulating layer I2 is provided between the film layer of the shielding horizontal line 154P and the film layer of the first vertical signal line 132. In this way, although the shielded horizontal line 154P intersects the first vertical signal line 132, the two lines will not be electrically connected to each other.
  • FIG. 30 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • the electronic device 100Q of FIG. 30 includes a substrate 110, a horizontal signal line 120, a first vertical signal line 132, a second vertical signal line 134, a third vertical signal line 136, and a fourth vertical signal line 138, including active elements 142 and pixel electrodes
  • the substrate 110, the horizontal signal line 120, the first vertical signal line 132, the second vertical signal line 134, the third vertical signal line 136, the fourth vertical signal line 138, the pixel structure 140, and the common electrode line 160 The configuration, structure, and stacking sequence of is substantially the same as that of the embodiment in FIG. 27, so please refer to the description of FIG. 27 for related description.
  • the first shielded vertical line 150Q is located between the first vertical signal line 132 and the second vertical signal line 134, and the second shielded vertical line 152Q is located between the third vertical signal line 136 and the fourth vertical signal line 138. between.
  • the first vertical shielding line 150Q and the second vertical shielding line 152Q may be electrically connected to the first line 162 of the common electrode line 160 through the conductive structure TH, respectively.
  • the first shielded vertical line 150Q and the second shielded vertical line 152Q do not overlap the horizontal signal line 120, and the shielded horizontal line 154G is connected between the end of the first shielded vertical line 150Q and the end of the second shielded vertical line 152Q to form a U Font pattern, but not limited to this.
  • the shielding horizontal line 154G may overlap the second line 164 of the common electrode line 160.
  • the cross-sectional structure of the first shielded vertical line 150Q, the second shielded vertical line 152Q and the shielded horizontal line 154G may be the same as the first shielded vertical line 150P, the second shielded vertical line 152P and the shielded horizontal line in FIGS. 28 and 29 154P.
  • FIG. 31 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • 31 shows the substrate 210 of the electronic device 200A, the first vertical signal line 232, the second vertical signal line 234, the third vertical signal line 236, the pixel electrode 244 of the pixel structure 240, the first shielding vertical line 250A, and the first vertical signal line 250A.
  • the electronic device 200A may be composed of the structure array arrangement shown in FIG. 31, and the electronic device 200A may also include lines and circuit structures such as horizontal signal lines and active elements of the pixel structure 240, but in order to clearly describe the vertical lines Setting, Figure 31 marks the location of these components with the omitted block BK.
  • the configuration of the horizontal signal lines and the active components can refer to the description of the embodiments such as FIG. 2, but is not limited thereto.
  • the pixel electrode 244 may include a first sub-electrode 244A and a second sub-electrode 244B, and the first sub-electrode 244A and the second sub-electrode 244B are respectively located on opposite sides of the omitted block BK.
  • the first vertical signal line 232 and the third vertical signal line 236 are located around the pixel electrode 244.
  • the second vertical signal line 234 substantially overlaps the central stem portion MV of the first sub-electrode 244A of the pixel electrode 244.
  • the orthographic projection of the second longitudinal signal line 234 on the substrate 210 substantially overlaps the center line of the orthographic projection of the first sub-electrode 244A on the substrate 110 and also overlaps the center of the orthographic projection of the second sub-electrode 244B on the substrate 110. line.
  • the first shielding vertical line 250A and the second shielding vertical line 252A are respectively located on opposite sides of the pixel electrode 244.
  • the vertical projection of the first shielding vertical line 250A on the substrate 210 is located between the vertical projection of the first vertical signal line 232 on the substrate 210 and the vertical projection of the second vertical signal line 234 on the substrate 210, and the second shielding vertical line 252A
  • the vertical projection on the substrate 210 is located between the vertical projection of the third longitudinal signal line 236 on the substrate 210 and the vertical projection of the second longitudinal signal line 234 on the substrate 210.
  • FIG. 32 schematically shows an embodiment of a cross-section of the position where the first shielding vertical line 250A is located in the electronic device 200A of FIG. 31. It can be seen from FIG. 32 that the first shielding vertical line 250A, the insulating layer I1, the insulating layer I2, and the pixel electrode 244 can be sequentially stacked on the substrate 210.
  • the insulating layer I1 and the insulating layer I2 can be made of inorganic insulating materials or organic insulating materials.
  • the inorganic insulating materials include silicon oxide, silicon nitride, or silicon oxynitride, and the organic insulating materials include polymethylmethacrylate (PMMA).
  • the material of the first shielding vertical line 250A and the pixel electrode 244 may include a transparent conductive material.
  • the film layers of the first vertical signal line 232, the second vertical signal line 234, and the third vertical signal line 236 in FIG. 31 may be disposed between the insulating layer I1 and the insulating layer I2, and the second shielding vertical line in FIG. 31
  • the stacking method of the 252A in the cross-sectional structure may be the same as that of the first shielding longitudinal line 250A.
  • FIG. 33 schematically shows another embodiment of the cross section of the position where the first shielding vertical line 250A is located in the electronic device 200A of FIG. 31.
  • the first shielding vertical line 250A, the insulating layer I1, the insulating layer I2, and the pixel electrode 244 may be sequentially stacked on the substrate 210, and a filter layer may be further provided between the insulating layer I2 and the pixel electrode 244 CF and the third insulating layer I3.
  • the materials of the insulating layer I1, the insulating layer I2, and the insulating layer I3 may include inorganic insulating materials or organic insulating materials.
  • the inorganic insulating materials include silicon oxide, silicon nitride, or silicon oxynitride, and the organic insulating material Materials include polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylphenol (PVP), or polyimide (PI).
  • the material of the filter layer CF may include color filter materials, such as red filter materials, green filter materials, and blue filter materials.
  • the material of the first shielding vertical line 250A and the pixel electrode 244 may include a transparent conductive material.
  • the film layers of the first vertical signal line 232, the second vertical signal line 234, and the third vertical signal line 236 in FIG. 31 may be disposed between the insulating layer I1 and the insulating layer I2, and the second shielding vertical line in FIG. 31
  • the stacking method of the 252A in the cross-sectional structure may be the same as that of the first shielding longitudinal line 250A.
  • the film layer of the first shielding longitudinal line 250A is located between the insulating layer I1 and the substrate 210.
  • the first shielded vertical line 250A and the unshown lateral signal line may be composed of continuously stacked film layers, so the first shielded vertical line 250A may be connected to the lateral signal line (not shown).
  • the film layer of the first shielding longitudinal line 250A may be located between the insulating layer I2 and the filter layer CF or between the filter layer CF and the insulating layer I3.
  • FIG. 34 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • 34 shows the substrate 210 of the electronic device 200B, the first vertical signal line 232, the second vertical signal line 234, the third vertical signal line 236, the pixel electrode 244 of the pixel structure 240, the first shielding vertical line 250B and the first vertical signal line 250B.
  • the electronic device 200B may be composed of the structure array arrangement shown in FIG. 34, and the electronic device 200B may also include lines and circuit structures such as horizontal signal lines and active elements of the pixel structure 240.
  • Figure 34 uses the omitted block BK to mark the location of these components.
  • the configuration of the horizontal signal lines and the active components can refer to the description of the embodiments such as FIG. 2.
  • the electronic device 200B is similar to the electronic device 200A, so the same component symbols in the two embodiments denote the same components and can refer to each other. Specifically, the electronic device 200B is different from the electronic device 200A mainly in the layout of the first shielded vertical line 250B and the second shielded vertical line 252B.
  • the pixel electrode 244 may include a first sub-electrode 244A and a second sub-electrode 244B.
  • the first sub-electrode 244A and the second sub-electrode 244B are located on opposite sides of the omitted area, and the first shielding vertical line 250B and None of the second shielding vertical lines 252B overlap the second sub-electrode 244B.
  • first vertical shielding line 250B and the second vertical shielding line 252B only overlap the first sub-electrode 244A.
  • the first longitudinal shielding wire 250B and the second longitudinal shielding wire 252B are located on opposite sides of the first sub-electrode 244A.
  • the first shielded vertical line 250B is located between the first vertical signal line 232 and the second vertical signal line 234, and the second shielded vertical line 252B is located between the second vertical signal line 234 and the third vertical signal line 236.
  • FIG. 35 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • 34 shows the substrate 210 of the electronic device 200C, the first vertical signal line 232, the second vertical signal line 234, the third vertical signal line 236, the pixel electrode 244 of the pixel structure 240, the first shielding vertical line 250C, and the first vertical signal line 234.
  • the electronic device 200C is similar to the electronic device 200A, so the same component symbols in the two embodiments denote the same components and can refer to each other.
  • the electronic device 200C is different from the electronic device 200A mainly in the layout of the first shielded vertical line 250C and the second shielded vertical line 252C.
  • the pixel electrode 244 may include a first sub-electrode 244A and a second sub-electrode 244B.
  • the first sub-electrode 244A and the second sub-electrode 244B are located on opposite sides of the omitted area and the first shielding vertical line 250C is None of the second shielding vertical lines 252C overlap the first sub-electrode 244A.
  • the first shielding vertical line 250C and the second shielding vertical line 252C only overlap the second sub-electrode 244B.
  • the first longitudinal shielding wire 250C and the second longitudinal shielding wire 252C are located on opposite sides of the second sub-electrode 244B.
  • the first shielded vertical line 250C is located between the first vertical signal line 232 and the second vertical signal line 234, and the second shielded vertical line 252C is located between the second vertical signal line 234 and the third vertical signal line 236.
  • the stacking sequence of the first shielding longitudinal wire 250C and the second shielding longitudinal wire 252C in the cross section please refer to the description of the first shielding longitudinal wire 250A in FIGS. 32 and 33.
  • FIG. 36 is a schematic partial top view of an electronic device according to an embodiment of the disclosure.
  • 36 shows the substrate 310 of the electronic device 300A, the first vertical signal line 332, the second vertical signal line 334, the third vertical signal line 336, the pixel electrode 344 of the pixel structure 340, the first shielding vertical line 350A, and the first vertical signal line 350A.
  • the electronic device 300A may be composed of the structure array arrangement shown in FIG. 36, and the electronic device 300A may also include lines and circuit structures such as horizontal signal lines and active elements of the pixel structure 240.
  • Fig. 36 marks the location of these components with the omitted block BK.
  • the configuration of the horizontal signal lines and the active components can refer to the description of the embodiments such as FIG. 2.
  • FIG. 36 shows two pixel structures 340, and the first vertical signal line 332, the second vertical signal line 334, and the third vertical signal line 336 are located between the two pixel structures 340.
  • the second vertical signal line 334 is located between the first vertical signal line 332 and the third vertical signal line 336.
  • the vertical projection of the first shielding vertical line 350A on the substrate 310 is located between the vertical projection of the first vertical signal line 332 on the substrate 310 and the vertical projection of the second vertical signal line 334 on the substrate 310
  • the second The vertical projection of the shielding vertical line 352A on the substrate 310 is located between the vertical projection of the second vertical signal line 334 on the substrate 310 and the vertical projection of the third vertical signal line 336 on the substrate 310.
  • the vertical projection of the first shielding vertical line 350A on the substrate 310 is outside the vertical projection of the pixel electrode 344 on the substrate 310, and the vertical projection of the second shielding vertical line 352A on the substrate 310 is located at the vertical projection of the pixel electrode 344 on the substrate 310. Outside.
  • the first shielding longitudinal wire 350A and the second shielding longitudinal wire 352A are, for example, transparent wires.
  • the first vertical shielding wire 350A and the second vertical shielding wire 352A are made of transparent conductive materials.
  • the pixel electrode 344 is also made of a transparent material.
  • the pixel electrode 344, the first shielding vertical line 350A, and the second shielding vertical line 352A may be the same film layer, but in other embodiments, the film layer of the pixel electrode 344 may be different from the first shielding vertical line.
  • the film layer of 350A and the second shielding longitudinal line 352A may be the same film layer, but in other embodiments, the film layer of the pixel electrode 344 may be different from the first shielding vertical line.
  • FIG. 37 schematically shows an embodiment of a cross-sectional structure where the first shielding longitudinal line 350A is located in the electronic device 300.
  • the insulating layer I1, the insulating layer I2, the first shielding vertical line 350A, and the insulating layer I3 can be sequentially stacked on the substrate 310.
  • the insulating layer I1, the insulating layer I2, and the insulating layer I3 can be made of inorganic insulating materials or organic insulating materials.
  • the inorganic insulating materials include silicon oxide, silicon nitride, or silicon oxynitride, and the organic insulating materials include polymethacrylic acid.
  • the first shielding vertical wire 350A disposed between the insulating layer I2 and the insulating layer I3 can be made of, for example, a transparent conductive material.
  • the film layers of the first vertical signal line 332, the second vertical signal line 334, and the third vertical signal line 336 may be located between the insulating layer I1 and the insulating layer I2, and the unshown horizontal signal line
  • the film layer of may be located between the substrate 310 and the insulating layer I1.
  • the film layer of the pixel electrode 344 may be disposed on the insulating layer I3.
  • the insulating layer I3 may be disposed between the film layer of the pixel electrode 344 and the film layer of the first shielding vertical line 350A.
  • FIG. 38 schematically shows another embodiment of the cross-sectional structure where the first shielding vertical line 350A is located in the electronic device 300.
  • the cross-sectional structure of FIG. 38 is similar to the cross-sectional structure of FIG. 37. Therefore, the same reference numerals are used to denote the same components in the two embodiments.
  • the insulating layer I1, the insulating layer I2, the first shielding vertical line 350A, the filter layer CF, and the insulating layer I3 can be sequentially stacked on the substrate 310.
  • the material of the filter layer CF may include color filter materials, such as red filter materials, green filter materials, and blue filter materials.
  • FIG. 39 schematically shows another embodiment of the cross-sectional structure of the electronic device 300. 39.
  • the horizontal signal line 320 provided in the block BK will also be omitted to illustrate the electronic The stacking relationship of the components in the device 300. It can be seen from FIG. 39 that the horizontal signal line 320, the insulating layer I1, the first vertical signal line 332, the insulating layer I2, and the pixel electrode 344 can be sequentially stacked on the substrate 310, and the pixel electrode 344 and the first vertical signal line 332 can be For the same film layer.
  • shielded lines for example, a first shielded vertical line, a second shielded vertical line, etc.
  • the shielded line can be connected to a common potential to provide signal shielding, thereby reducing interference between signal lines. Therefore, the electronic device of the embodiment of the disclosure can have better quality.
  • shielded traces are provided between adjacent lines that transmit different signals to reduce adverse effects caused by coupling between the lines.
  • the shielded wiring may be a transparent wiring. Therefore, when the electronic device is used to display images, its display aperture ratio can be reduced without being affected by the shielding wiring.

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Abstract

一种电子装置(100',100A-100Q,200A-200C,300)，包括基板(110,210,310)、横向信号线(120,320)、第一纵向信号线(132,232,332)、第二纵向信号线(134,234,334)以及第一屏蔽纵线(150A-150D,150K-150Q,250A-250C,350A)。横向信号线(120,320)、第一纵向信号线(132,232,332)、第二纵向信号线(134,234,334)以及第一屏蔽纵线(150A-150D,150K-150Q,250A-250C,350A)都配置于基板(110,210,310)上。第一纵向信号线(132,232,332)和第二纵向信号线(134,234,334)均与横向信号线(120,320)相交。第二纵向信号线(134,234,334)连接横向信号线(120,320)的其中一条。第一屏蔽纵线(150A-150D,150K-150Q,250A-250C,350A)在基板(110,210,310)的垂直投影位于第一纵向信号线(132,232,332)在基板(110,210,310)的垂直投影与第二纵向信号线(134,234,334)在基板(110,210,310)的垂直投影之间。

Description

电子装置 技术领域
本发明是有关于一种电子装置。
背景技术
随着电子产品的普及化，各种电子装置中的线路布局月亦复杂。因此，许多相邻的线路可能用于传递不同类型的信号。然而，相邻线路之间的耦合作用往往影响信号传递的品质，而导致最终呈现的功能不符预期。因此，线路布局的规划，往往是电子产品中的设计重点之一。
发明公开
本发明提供一种电子装置，其设计可有助于降低线路之间的耦合而提供改进的品质。
本发明的电子装置包括基板、多条横向信号线、第一纵向信号线、第二纵向信号线以及第一屏蔽纵线。多条横向信号线、第一纵向信号线、第二纵向信号线以及第一屏蔽纵线都配置于基板上。第一纵向信号线与横向信号线相交。第二纵向信号线与横向信号线相交，且第二纵向信号线连接多条横向信号线的其中一条。第一屏蔽纵线在基板的垂直投影位于第一纵向信号线在基板的垂直投影与第二纵向信号线在基板的垂直投影之间。
在本发明的一实施例中，上述的电子装置更包括多个像素结构，配置于基板上。多个像素结构的其中一者被横向信号线的相邻两条以及第二纵向信号线围绕且包括像素电极。像素电极于垂直基板方向上重叠第一纵向信号线或第二纵向信号线。
在本发明的一实施例中，上述的像素电极重叠第一屏蔽纵线。
在本发明的一实施例中，上述的像素电极横跨第二纵向信号线，像素电极具有中央主干部，且第二纵向信号线重叠中央主干部。
在本发明的一实施例中，上述的第一屏蔽纵线为透明走线。
在本发明的一实施例中，上述的电子装置更包括共用电极线。共用电极线配置于基板上。共用电极线位于多条横向信号线的相邻两条之间。
在本发明的一实施例中，上述的共用电极线与第一纵向信号线及第二纵向信号线相交。
在本发明的一实施例中，上述的第一屏蔽纵线与共用电极线彼此直接堆叠。
在本发明的一实施例中，上述的电子装置更包括至少一绝缘层以及贯穿绝缘层的导通结构。绝缘层配置于第一屏蔽纵线与共用电极线之间，且导通结构将第一屏蔽纵线与共用电极线电性连接。
在本发明的一实施例中，上述的电子装置更包括多个像素结构，配置于基板上。像素结构的其中一者位于多条横向信号线的相邻两条之间且包括像素电极。第一屏蔽纵线的膜层位于共用电极线的膜层与像素电极的膜层之间。
在本发明的一实施例中，上述的电子装置更包括多个像素结构，配置于基板上。像素结构的其中一者位于多条横向信号线的相邻两条之间且包括像素电极。共用电极线的膜层位于第一屏蔽纵线的膜层与像素电极的膜层之间。
在本发明的一实施例中，上述的共用电极线包括第一线以及第二线。第一屏蔽纵线重叠第一线、第二线或两者。
在本发明的一实施例中，上述的电子装置更包括第二屏蔽纵线。第一纵向信号线位于第一屏蔽纵线与第二屏蔽纵线位于该像素电极之间。
在本发明的一实施例中，上述的电子装置更包括第三屏蔽纵线。第三屏蔽纵线位于第一纵向信号线与第二屏蔽纵线之间。
在本发明的一实施例中，上述的电子装置更包括第四纵向信号线。第一纵向信号线与第三纵向信号线在基板的垂直投影位于第二纵向信号线在基板的垂直投影与第四纵向信号线在基板的垂直投影之间。
在本发明的一实施例中，上述的电子装置更包括屏蔽电极。屏蔽电极连接第一屏蔽纵线。
在本发明的一实施例中，上述的第一屏蔽纵线完全位于多条横向信号线的相邻两条之间。
在本发明的一实施例中，上述的电子装置更包括多个像素结构，配置于该基板上。像素结构的其中一者包括像素电极。第一屏蔽纵线在基板的垂直投影位于像素电极在基板的垂直投影之外。
在本发明的一实施例中，上述的电子装置更包括多个像素结构及第三纵 向信号线。多个像素结构阵列配置于基板上。第二纵向信号线位于第三纵向信号线与第一纵向信号线之间，且第一纵向信号线、第二纵向信号线与第三纵向信号线位于多个像素结构的相邻两行之间。
在本发明的一实施例中，上述的电子装置更包括第二屏蔽纵线，配置于基板上。第二屏蔽纵线在基板的垂直投影位于第二纵向信号线在基板的垂直投影与第三纵向信号线在基板的垂直投影之间。
基于上述，本发明实施例的电子装置中，于传递不同信号的相邻线路之间设置屏蔽走线，以降低线路之间的耦合造成的不良影响。此外，在部分实施例中，屏蔽走线可以为透明走线。因此，电子装置用以显示画面时，其显示开口率可不受屏蔽走线影响而缩减。
附图简要说明
图1是一种的电子装置的局部上视示意图。
图2为本揭露一实施例的电子装置的局部上视示意图。
图3为图2的电子装置中沿剖线A-A的剖面的一种实施方式的示意图。
图4为图2的电子装置中沿剖线A-A的剖面的另一种实施方式的示意图。
图5～图10分别为本揭露一实施例的电子装置的局部示意图。
图11为图2的电子装置中沿剖线B-B的剖面的另一种实施方式的示意图。
图12为图2的电子装置中沿剖线B-B的剖面的另一种实施方式的示意图。
图13～图19分别为本揭露一实施例的电子装置的局部示意图。
图20示意性的表示图19的电子装置沿剖线C-C的剖面结构的一种实施方式。
图21示意性的表示图19的电子装置沿剖线D-D的剖面结构的一种实施方式。
图22示意性的表示图19的电子装置沿剖线C-C的剖面结构的另一种实施方式。
图23示意性的表示图19的电子装置沿剖线D-D的剖面结构的另一种实施方式。
图24示意性的表示图19的电子装置沿剖线C-C的剖面结构的再一种实施方式。
图25示意性的表示图19的电子装置沿剖线D-D的剖面结构的再一种实施方式。
图26为本揭露一实施例的电子装置的上视示意图。
图27为本揭露一实施例的电子装置的上视示意图。
图28示意性的表示图27的电子装置沿剖线E-E的剖面结构的一种实施方式。
图29示意性的表示图27的电子装置沿剖线E-E的剖面结构的一种实施方式。
图30为本揭露一实施例的电子装置的局部上视示意图。
图31为本揭露一实施例的电子装置的局部上视示意图。
图32示意性的表示图31的电子装置200A中，第一屏蔽纵线250A所在位置的剖面的一种实施方式。
图33示意性的表示图31的电子装置200A中，第一屏蔽纵线250A所在位置的剖面的另一种实施方式。
图34～图36分别为本揭露一实施例的电子装置的局部上视示意图。
图37示意性的表示电子装置300中第一屏蔽纵线350A所在处的剖面结构的一种实施方式。
图38示意性的表示电子装置300中第一屏蔽纵线350A所在处的剖面结构的另一种实施方式。
图39示意性的表示电子装置300的剖面结构的另一种实施方式。
其中，附图标记：
100’、100A～100Q、200A～200C、300:电子装置
110、210、310：基板
120、320：横向信号线
130、DL、VL、VL1、VL2：纵向信号线
132、232、332：第一纵向信号线
134、234、334：第二纵向信号线
136、236、336：第三纵向信号线
138：第四纵向信号线
140、240、340：像素结构
142：主动元件
144、244、344：像素电极
150A～150D、150K、150L～150Q、250A～250C、350A：第一屏蔽纵线
150C1、152C1、150D1、152D1、150K1、152K1、150L1、152L1：延伸部
150C2、152C2、150D2、152D2、150K2、152K2、150L2、152L2：重叠部
152B～152E、152K～152Q、252A～252c：第二屏蔽纵线
154E、154G、154P：屏蔽横线
156F：第三屏蔽纵线
158M：屏蔽电极
160：共用电极线
162：第一线
164：第二线
244A：第一子电极
244B：第二子电极
A-A、B-B-、C-C、D-D、E-E：剖线
BK：省略区块
CF：滤光层
D1：第一方向
D2：第二方向
D3：厚度方向
I0～I3：绝缘层
MH：横向主干部
MV：纵向主干部
TH、VIA：导通结构
SEC1、SEC2：区段
ST：条纹部
实现本发明的最佳方式
以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的限定。
图1为一种的电子装置的局部上视示意图。在图1中，电子装置100’包括基板110、多条横向信号线120、多条纵向信号线130以及多个像素结构140。像素结构140以阵列排列的方式配置于基板110上。换言之，像素结构140沿着第一方向D1以及相交于第一方向D1的第二方向D2呈现阵列排列，其中第一方向D1可理解为横向方向，而第二方向D2可理解为纵向方向。因此以下实施例描述的横向与纵向可分别视为图1中的第一方向D1与第二方向D2。各像素结构140连接于多条横向信号线120的其中一条。另外，多条纵向信号线130可以划分成直接连接像素结构140的纵向信号线DL以及没有直接连接像素结构140的纵向信号线VL。沿着第二方向D2排成一列的像素结构140夹于两条纵向信号线DL之间，且各个像素结构140连接于纵向信号线DL的其中一条。在部分实施例中，沿着第二方向D2排列在同一列的不同像素结构140可以分别连接至位于第一侧的纵向信号线DL以及位于相对的第二侧的纵向信号线DL。各纵向信号线VL则夹于两列像素结构140之间以及两条纵向信号线DL之间。在部分实施例中，纵向信号线VL包括通过对应的导通结构VIA连接于横向信号线120的纵向信号线VL1，但不以此为限。
在部分实施例中，各像素结构140可包括主动元件142以及连接于主动元件142的像素电极144，其中每个主动元件142可以为具有栅极、源极与漏极的晶体管，栅极可连接到其中一条横向信号线120，源极连接到其中一条纵向信号线DL，而漏极连接到像素电极144。另外，每一条横向信号线120都连接至其中一条纵向信号线VL1。因此，主动元件142的栅极的信号可以由纵向信号线VL1传递给横向信号线120，再由横向信号线120输入给栅极。具体而言，为了避免横向信号线120与纵向信号线130之间的短路，横向信号线120与纵向信号线130可由不同膜层构成，且横向信号线120与纵向信号线130之间可夹有一或多层绝缘层。在一些实施例中，为了将信号由纵向信号线VL1传递给横向信号线120，可以在对应的纵向信号线VL1与横向信号线120之间设置导通结构VIA。如此，栅极需要的信号可由纵向信号线VL1藉由导通结构VIA传递给横向信号线120，再由横向信号线120传递给栅极。
在部分的实施例中，电子装置100’可更包括驱动电路IC，且驱动电路 IC位于纵向信号线130的一端。纵向信号线DL与纵向信号线VL1可以直接接收由驱动电路IC所提供的信号，而横向信号线120则可通过纵向信号线VL1接收到对应的信号。如此一来，电子装置100’在第一方向D1的两端无须设置传递信号用的线路或是相关电路而可达到窄边框的设计，并且电子装置100’的轮廓也无须受限。举例而言，由上视视角来看，电子装置100’可以具有非矩形的轮廓。在一些实施例中，电子装置100’中的纵向信号线VL还可包括纵向信号线VL2，且纵向信号线VL2可以不用来传递横向信号线120需要的信号，而是被输入直流电位。举例而言，纵向信号线VL2可以不连接任何横向信号线120，而应用于触控或其他功能的实现。
图2为本揭露一实施例的电子装置的局部上视示意图。图2的电子装置100A具有大致相似于图1的电子装置100’的布局设计，因此两者的说明中采用相同的元件符号来表示相同的构件。在图2中，电子装置100A包括基板110、多条横向信号线120、多条纵向信号线130、多个像素结构140以及多条第一屏蔽纵线150A，且多条横向信号线120、多条纵向信号线130、多个像素结构140、多条第一屏蔽纵线150A以及共用电极线160都配置于基板110上。多条横向信号线120、多条纵向信号线130与多个像素结构140的布局与连接关系例如如图1所述，在此不另重述。为了方便说明，以下主要阐述图2中位于中间的单一个像素结构140周边的信号线路。
在本实施例中，横向信号线120的延伸方向例如为图1所示的第一方向D1，而纵向信号线130的延伸方向例如为图1所述的第二方向D2，其中横向与纵向彼此相交，但两者相交角度不以90度为限。纵向信号线130可包括位于像素结构140的一侧的第一纵向信号线132与第二纵向信号线134，其中第一纵向信号线132为直接连接于其中一个像素结构140的纵向信号线，而第二纵向信号线134可以连接于整个电子装置100A中的其中一条横向信号线120。像素结构140的其中一个位于横向信号线120的相邻两条之间且位于第二纵向信号线134的一侧。单一个像素结构140可包括主动元件142与像素电极144，其中主动元件142的三端分别连接至对应的横向信号线120、第一纵向信号线132以及像素电极144。
在此，横向信号线120例如为扫描信号线，其用于提供扫描信号给像素结构140，而第一纵向信号线132用于提供数据信号给像素结构140。换言之， 第一纵向信号线132与第二纵向信号线134虽彼此相邻，却是用于传递不同类型的信号。在这样的线路设置之下，第一纵向信号线132与第二纵向信号线134彼此耦合可能造成彼此的信号传输品质受到影响。不过，在本实施例中，第一屏蔽纵线150A在基板110的垂直投影(也就是图2中的布局面积)位于第一纵向信号线132在基板110的垂直投影与第二纵向信号线134在基板110的垂直投影之间。另外，电子装置100A可更包括共用电极线160，且第一屏蔽纵线150A可以连接至共用电极线160以被施加共用电位。如此，第一屏蔽纵线150A的设置有助于减轻第一纵向信号线132与第二纵向信号线134彼此之间的干扰而有助于确保第一纵向信号线132与第二纵向信号线134的信号传递品质，从而使电子装置所执行的功能(例如画面显示、触控感测等)可符合预期。在图2中，共用电极线160包括第一线162与第二线164，其中第一线162与第二线164位于相邻两条横向信号线120之间且位于像素结构140的相对两侧。此外，第一屏蔽纵线150A可以既重叠第一线162也重叠第二线164，但不以此为限。
在本实施例中，纵向信号线130还可包括位于像素结构140另一侧的第三纵向信号线136以及第四纵向信号线138。像素结构140例如位于第二纵向信号线134与第四纵向信号线138之间。第三纵向信号线136位于第四纵向信号线138与第一纵向信号线132之间。另外，第一纵向信号线132与第三纵向信号线136在基板110的垂直投影位于第二纵向信号线134在基板110的垂直投影与第四纵向信号线138在基板110的垂直投影之间。另外，第三纵向信号线136以及第四纵向信号线138之间可不设置有屏蔽纵线，但不以此为例。第三纵向信号线136连接于同一列的其他像素结构，而第四纵向信号线138例如可连接至直流电位或是整个电子装置100A中的其中一条横向信号线120，但不以此为限。
在本实施例中，像素结构140的像素电极144于垂直基板110方向上可重叠第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138以及第一屏蔽纵线150A。具体而言，像素电极144可以横跨第一纵向信号线132、第一屏蔽纵线150A与第三纵向信号线136，并且重叠一部分宽度的第二纵向信号线134及一部分宽度的第四纵向信号线138。第一屏蔽纵线150A可以为透明走线，因此像素电极144重叠于第一屏蔽纵线 150A的部分仍可作为有效的显示面积。如此一来，电子装置100A虽另外设置有第一屏蔽纵线150A，却不因第一屏蔽纵线150A而减小显示面积。
另外，在本实施例中，像素电极144可包括纵向主干部MV、横向主干部MH以及多条条纹部ST，其中纵向主干部MV与横向主干部MH相交呈十字型而划分出四个子区域，而条纹部ST连接于纵向主干部MV与横向主干部MH以大致放射状的方式由纵向主干部MV与横向主干部MH向外延伸。不过，在其他实施例中，像素电极144可以具有其他图案，或视为完整矩形形状。
图3为图2的电子装置中沿剖线A-A的剖面的一种实施方式的示意图。同时参阅图2与图3可知，共用电极线160配置于基板110上。在本实施例中，共用电极线160所在膜层可以相同于横向信号线120所在膜层。共用电极线160与横向信号线120的材质包括金属或合金等具有良好导电性的材料。共用电极线160与横向信号线120所在膜层例如相较于其他线路所在膜层更接近基板110，但不以此为限。
制作完共用电极线160与横向信号线120后，可以直接形成另一导电层以制作第一屏蔽纵线150A，使第一屏蔽纵线150A直接叠置于共用电极线160上。换言之，第一屏蔽纵线150A直接接触共用电极线160而无中间夹层。第一屏蔽纵线150A的可以是透明导电图案。第一屏蔽纵线150A的材质可以是金属氧化物，例如：铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物、或其它合适的氧化物、或者是上述至少二者之堆叠层。或是，第一屏蔽纵线150A的材质可以是有机透明导电材料。在部分实施例中，由于第一屏蔽纵线150A的材质与共用电极线160的材质具有不同性质，在第一屏蔽纵线150A的图案化过程中较不容易损伤共用电极线160及横向信号线。因此，第一屏蔽纵线150A可以直接叠置于共用电极线160上，而无中间夹层。
第一屏蔽纵线150A制作完成之后，可将绝缘层I1形成于基板110上，并接着制作纵向信号线130。在此，纵向信号线130会相交于横向信号线120与共用电极线160。因此绝缘层I1的设置可将纵向信号线130与共用电极线160分隔开来也将纵向信号线130与横向信号线120分隔开来。在一些实施例中，绝缘层I1的材质可包括无机绝缘材料或是有机绝缘材料，其中无机绝缘材料包括氧化硅、氮化硅或氮氧化硅等，而有机绝缘材料包括聚甲基丙烯酸甲酯(PMMA)、聚乙烯醇(PVA)、聚乙烯酚(PVP)或聚亚酰胺(PI)等。另外， 纵向信号线130的材质包括金属或合金等具有良好导电性的材料。
在完成纵向信号线130之后，可选择性的在基板110上形成一或多层绝缘层或功能层，其中本实施例以绝缘层I2、滤光层CF以及绝缘层I3为例，但不以此为限。绝缘层I2与I3的材质可包括无机绝缘材料或是有机绝缘材料，其中无机绝缘材料包括氧化硅、氮化硅或氮氧化硅等，而有机绝缘材料包括聚甲基丙烯酸甲酯(PMMA)、聚乙烯醇(PVA)、聚乙烯酚(PVP)或聚亚酰胺(PI)等。滤光层CF的材质可包括彩色滤光材料，例如红色滤光材料、绿色滤光材料以及蓝色滤光材料。另外，绝缘层I3可以具有较厚的厚度，以作为平坦层用，但不以此为限。
像素电极144可以形成于绝缘层I3上。像素电极144的材质可包括透明导电材料。透明导电材料可包括金属氧化物，例如：铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物、或其它合适的氧化物、或者是上述至少二者之堆叠层。或是，透明导电材料可以是有机透明材料。在部分实施例中，像素电极144的材质可相同于第一屏蔽纵线150A的材质。
图4为图2的电子装置中沿剖线A-A的剖面的另一种实施方式的示意图。在图4中，第一屏蔽纵线150A、共用电极线160、绝缘层I1、纵向信号线130、绝缘层I2、滤光层CF、绝缘层I3与像素电极144依序堆叠于基板110上。具体来说，图4的剖面不同于图3的剖面之处在于，第一屏蔽纵线150A与共用电极线160的堆叠顺序。因此，图4的剖面中各膜层的材质、堆叠关系等可参照图3的相关说明，而不另重述。
图5为本揭露一实施例的电子装置的局部示意图。图5的电子装置100B大致相似于图2的电子装置100A，因此两实施例中所记载的相同构件可参照前述内容。电子装置100B可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150B与第二屏蔽纵线152B。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150B与共用电极线160的相对关系可参照图2实施例，而不在此重述。具体而言，本实施例不同于图2的实施例之处在于，电子装置100B更包括第二屏蔽纵线152B，且第一屏蔽纵线150B 的长度设计不同。
在本实施例中，第一屏蔽纵线150B位于第一纵向信号线132与第二纵向信号线134之间，而第二屏蔽纵线152B位于第三纵向信号线136与第四纵向信号线138之间。换言之，第一纵向信号线132位于第一屏蔽纵线150B与第二屏蔽纵线150B之间，而第三纵向信号线136位于第一纵向信号线132与第二屏蔽纵线152B之间。像素结构140包括主动元件142与像素电极144，且第二屏蔽纵线152B与第一屏蔽纵线150B位于像素电极144的相对两侧。另外，像素电极144可以横越第一屏蔽纵线150B与第二屏蔽纵线152B而延伸到第二纵向信号线134与第四纵向信号线138。在部分的实施例中，第一屏蔽纵线150B与第二屏蔽纵线152B例如以像素结构140成对称分布。也就是说，第一屏蔽纵线150B到像素电极144的中心轴的距离可以大致相同于第二屏蔽纵线152B到像素电极144的中心轴的距离，但不以此为限。
在本实施例中，第一屏蔽纵线150B与第二屏蔽纵线152B可以都横越共用电极线160的第一线162，但不与共用电极线160的第二线164相交。在一些实施例中，第一屏蔽纵线150B与第二屏蔽纵线152B可以与第二线164相隔一段距离。不过，在其他的实施例中，第一屏蔽纵线150B与第二屏蔽纵线152B可以都横越第一线162也重叠第二线164。或是，在另外一些实施例中，第一屏蔽纵线150B与第二屏蔽纵线152B可以都重叠第二线164，但都与第一线162相隔一段距离。整体而言，第一屏蔽纵线150B与第二屏蔽纵线152B只要可以接触第一线162与第二线164的其中一者或两者就可以接收到共用电位而提供屏蔽作用。另外，第二屏蔽纵线152B可以为透明导电图案，因此像素结构140在第二屏蔽纵线152B的面积中也是可有效进行显示，而不因第二屏蔽纵线152B的设置而缩减像素结构140的有效显示面积。
图6为本揭露一实施例的电子装置的局部示意图。图6的电子装置100C大致相似于图5的电子装置100B，因此两实施例中所记载的相同构件可参照前述内容。电子装置100C可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150C与第二屏蔽纵线152C。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号 线138、像素结构140、第一屏蔽纵线150C、第二屏蔽纵线152C与共用电极线160的相对关系可参照前述实施例，而不在此重述。具体而言，本实施例不同于图5的实施例之处在于，电子装置100C中第一屏蔽纵线150C与第二屏蔽纵线152C的宽度设计不同。
在本实施例中，第一屏蔽纵线150C具有延伸部150C1与重叠部150C2，延伸部150C1在第一纵向信号线132与第二纵向信号线134之间的间隙中延伸并接触共用电极线160的第一线162，而重叠部150C2连接于延伸部150C1且重叠第一纵向信号线132。另外，第二屏蔽纵线152C也具有延伸部152C1与重叠部152C2，延伸部152C1在第三纵向信号线136与第四纵向信号线138之间的间隙中延伸并接触共用电极线160的第一线162，而重叠部152C2连接于延伸部152C1且重叠第三纵向信号线136。在本实施例中，重叠部150C2连接延伸部150C1的中间段，且重叠部152C2连接延伸部152C1的中间段，但不以此为限。
图7为本揭露一实施例的电子装置的局部示意图。图7的电子装置100D大致相似于图6的电子装置100C，因此两实施例中所记载的相同构件可参照前述内容。电子装置100D可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150D与第二屏蔽纵线152D。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140与共用电极线160的相对关系可参照前述实施例，而不在此重述。具体而言，本实施例不同于图6的实施例之处在于，电子装置100D中第一屏蔽纵线150D与第二屏蔽纵线152D在重叠部的设计不同。
具体而言，第一屏蔽纵线150D具有延伸部150D1与重叠部150D2，延伸部150D1在第一纵向信号线132与第二纵向信号线134之间的间隙中延伸并接触共用电极线160的第一线162，而重叠部150D2连接于延伸部150D1且重叠第一纵向信号线132。另外，第一屏蔽纵线150D的重叠部150D2可朝向共用电极线160的第二线164延伸而重叠第二线164。第二屏蔽纵线152D也具有延伸部152D1与重叠部152D2，延伸部152D1在第三纵向信号线136与第四纵向信号线138之间的间隙中延伸并接触共用电极线160的第一线162， 而重叠部152D2连接于延伸部152D1且重叠第三纵向信号线136。另外，第二屏蔽纵线152D的重叠部152D2可朝向共用电极线160的第二线164延伸而重叠第二线164。
图8为本揭露一实施例的电子装置的局部示意图。图8的电子装置100E大致相似于图5的电子装置100B，因此两实施例中所记载的相同构件可参照前述内容。电子装置100E可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150B、第二屏蔽纵线152B以及屏蔽横线154E。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150B与共用电极线160的相对关系可参照图2实施例且第一屏蔽纵线150B与第二屏蔽纵线152B的设置方式可参照图5的实施例，而不在此重述。具体而言，本实施例不同于图5的实施例之处在于，电子装置100E更包括屏蔽横线154E。
屏蔽横线154E由第一屏蔽纵线150B朝横向延伸而横跨第一纵向信号线132与第三纵向信号线136并且连接至第二屏蔽纵线152B。屏蔽横线154E连接于第一屏蔽纵线150B的中间段，且连接于第二屏蔽纵线152B的中间段，因此屏蔽横线154E、第一屏蔽纵线150B与第二屏蔽横线152B构成H字型的图案。在本实施例中，像素结构140的像素电极144例如具有横向主干部MH，且屏蔽横线154E在基板110上的正投影可以重叠横向主干部MH在基板110上的正投影，但不以此为限。另外，屏蔽横线154E可以为透明导电图案，因此像素结构140在屏蔽横线154E的面积中也是可有效进行显示，而不因屏蔽横线154E的设置而缩减像素结构140的有效显示面积。
在一些实施例中，由于屏蔽横线154E将第一屏蔽纵线150B与第二屏蔽横线152B连接在一起，第一屏蔽纵线150B与第二屏蔽横线152B可以仅有一者连接于共用电极线160。举例而言，第一屏蔽纵线150B与第二屏蔽横线152B中可以仅有一者连接至共用电极线160的第一线162、连接至共用电极线160的第二线164、或是同时连接至共用电极线160的第一线162与第二线164。
图9为本揭露一实施例的电子装置的局部示意图。图9的电子装置100F大致相似于图8的电子装置100E，因此两实施例中所记载的相同构件可参照 前述内容。电子装置100F可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150B、第二屏蔽纵线152B、屏蔽横线154E以及第三屏蔽纵线156F。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140与共用电极线160的相对关系可参照图2实施例，第一屏蔽纵线150B与第二屏蔽纵线152B的设置方式可参照图5的实施例，且屏蔽横线154E的设置方式可参照图8的实施例，而不在此重述。
具体而言，本实施例不同于图5的实施例之处在于，电子装置100F更包括第三屏蔽纵线156F。第三屏蔽纵线156F位于第一屏蔽纵线150B与第二屏蔽纵线152B之间。第三屏蔽纵线156F可以连接于屏蔽横线154E且第三屏蔽纵线156F与屏蔽横线154E交错以构成十字型，但不以此为限。在本实施例中，像素结构140的像素电极144例如具有纵向主干部MV与横向主干部MH，其中第三屏蔽纵线156F在基板110上的正投影可以重叠纵向主干部MV在基板110上的正投影，而屏蔽横线154E在基板110上的正投影可以重叠横向主干部MH在基板110上的正投影，但不以此为限。另外，屏蔽横线154E与第三屏蔽纵线156F可以为透明导电图案，因此像素结构140在屏蔽横线154E的面积中也是可有效进行显示，而不因屏蔽横线154E与第三屏蔽纵线156F的设置而缩减像素结构140的有效显示面积。
图10为本揭露一实施例的电子装置的局部示意图。图10的电子装置100G大致相似于图2的电子装置100A，因此两实施例中所记载的相同构件可参照前述内容。电子装置100G可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150A与屏蔽横线154G。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150A与共用电极线160的相对关系可参照图2实施例，而不在此重述。
具体而言，本实施例不同于图2的实施例之处在于，电子装置100G更包 括屏蔽横线154G。屏蔽横线154G由第一屏蔽纵线150A朝横向延伸而横跨第一纵向信号线132且屏蔽横线154G连接于第一屏蔽纵线150A的末端。屏蔽横线154G在基板110上的正投影可以重叠共用电极线160的第二线164在基板110上的正投影，且设置可以完全位在共用电极线160的第二线164在基板110上的正投影之内。
图11为图2的电子装置中沿剖线B-B的剖面的另一种实施方式的示意图。在图11中，共用电极线160、屏蔽横线154G、绝缘层I1、纵向信号线130、绝缘层I2、滤光层CF、绝缘层I3与像素电极144依序堆叠于基板110上，其中屏蔽横线154G与第一屏蔽纵线150A为相同膜层。本实施例的各膜层的材质可参照图3与图4的说明，而不另重述。另外，在图11的剖面中，区段SEC1表示为屏蔽横线154G既重叠纵向信号线130也重叠共用电极线160时，各膜层堆叠顺序。同时，区段SEC2表示为第一屏蔽纵线150A与屏蔽横线154G重叠共用电极线160时，各膜层堆叠顺序，其中区段SEC2的膜层数量与膜层堆叠顺序大致相同于图3的剖面结构。在区段SEC1中，屏蔽横线154G与第一纵向信号线132在厚度方向上重叠。不过，屏蔽横线154G与第一纵向信号线132之间设置有绝缘层I1。因此，屏蔽横线154G与第一纵向信号线132不会彼此短路。
图12为图2的电子装置中沿剖线B-B的剖面的另一种实施方式的示意图。在图12中，屏蔽横线154G、共用电极线160、绝缘层I1、纵向信号线130、绝缘层I2、滤光层CF、绝缘层I3与像素电极144依序堆叠于基板110上。具体来说，图12的剖面不同于图11的剖面之处在于，屏蔽横线154G与共用电极线160的堆叠顺序。因此，图12的剖面中各膜层的材质、堆叠关系等可参照图11的相关说明，而不另重述。在图12的剖面中，区段SEC1表示为屏蔽横线154G既重叠纵向信号线130也重叠共用电极线160时，各膜层堆叠顺序。同时，区段SEC2表示为第一屏蔽纵线150A与屏蔽横线154G重叠共用电极线160时，各膜层堆叠顺序，其中区段SEC2的膜层数量与膜层堆叠顺序大致相同于图4的剖面结构。
在图11与图12的区段SEC1中，屏蔽横线154G与纵向信号线130的重叠关系与膜层堆叠顺序可以应用于图6到图9任一实施例中。举例而言，区段SEC1中的共用电极线160移除后即可视为图6与图7的实施例中重叠部 150C2与150D2重叠第一纵向信号线132的剖面结构。例如，重叠部150C2与150D2重叠第一纵向信号线132的剖面结构可包括依序堆叠的基板110、重叠部150C2或150D2、绝缘层I1、第一纵向信号线132、绝缘层I2、滤光层CF、绝缘层I3与像素电极144。图6与图7的实施例中重叠部152C2与152D2重叠第三纵向信号线134的剖面结构、以及图8与图9的实施例中屏蔽横线154E重叠第一纵向信号线132与第三纵向信号线136的剖面结构。例如，重叠部150C2与150D2重叠第三纵向信号线134的剖面结构可包括依序堆叠的基板110、重叠部150C2或150D2、绝缘层I1、第三纵向信号线134、绝缘层I2、滤光层CF、绝缘层I3与像素电极144。
图13为本揭露一实施例的电子装置的局部示意图。图13的电子装置100H大致相似于图10的电子装置100G，因此两实施例中所记载的相同构件可参照前述内容。电子装置100H可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150A、屏蔽横线154G与第二屏蔽纵线152B。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150A与共用电极线160的相对关系可参照前述实施例，而不在此重述。具体而言，本实施例不同于图10的实施例之处在于，电子装置100H更包括第二屏蔽纵线152H。
在本实施例中，第一屏蔽纵线150A位于第一纵向信号线132与第二纵向信号线134之间，而第二屏蔽纵线152H位于第三纵向信号线136与第四纵向信号线138之间。屏蔽横线154G连接于第一屏蔽纵线150A的末端与第二屏蔽纵线152H的末端之间，以构成U字型图案，但不以此为限。像素结构140包括主动元件142与像素电极144，且第一屏蔽纵线150A与第二屏蔽纵线152H位于像素电极144的相对两侧。像素电极144，可以横越第一屏蔽纵线150A与第二屏蔽纵线152H。第一屏蔽纵线150A与第二屏蔽纵线152H都是由透明导电材料制作，因此第一屏蔽纵线150A与第二屏蔽纵线152H所在区域不会遮蔽像素结构140的显示面积，这有助于确保电子装置100H的显示效果。
在本实施例中，屏蔽横线154G、第一屏蔽纵线150A与第二屏蔽纵线152H彼此连接而构成的U字型图案例如既重叠共用电极线160的第一线162也重 叠共用电极线160的第二线164，且第一屏蔽纵线150A与第二屏蔽纵线152H甚至横越第一线162，但不以此为例。在部分实施例中，屏蔽横线154G、第一屏蔽纵线150A与第二屏蔽纵线152H中可仅有一者或两者重叠并接触共用电极线160。举例而言，第一屏蔽纵线150A与第二屏蔽纵线152H可以具有不同长度，使得第一屏蔽纵线150A与第二屏蔽纵线152H其中一者横越第一线162而另一者与第一线162相隔一段距离。或是，在其他实施例中，连接于第一屏蔽纵线150A与第二屏蔽纵线152H之间的屏蔽横线154G可以不重叠第二线164。
图14为本揭露一实施例的电子装置的局部示意图。图14的电子装置100I大致相似于图13的电子装置100H，因此两实施例中所记载的相同构件可参照前述内容。电子装置100I可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150A、屏蔽横线154G、第二屏蔽纵线152H与屏蔽横线154E。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150A与共用电极线160的相对关系可参照前述的实施例，而不在此重述。
具体而言，本实施例不同于图13的实施例之处在于，电子装置100H更包括屏蔽横线154E，其中屏蔽横线154E的设置方式大致相同于图8中的屏蔽横线154E。屏蔽横线154E由第一屏蔽纵线150A朝横向延伸而横跨第一纵向信号线132与第三纵向信号线136并且连接至第二屏蔽纵线152H。屏蔽横线154E连接于第一屏蔽纵线150A的中间段，且连接于第二屏蔽纵线152H的中间段。像素结构140的像素电极144例如具有横向主干部MH与纵向主干部MV，横向主干部MH与纵向主干部MV相交成十字型且屏蔽横线154E在基板110上的正投影可以重叠横向主干部MH在基板110上的正投影，但不以此为限。
图15为本揭露一实施例的电子装置的局部示意图。图15的电子装置100J大致相似于图14的电子装置100I，因此两实施例中所记载的相同构件可参照前述内容。电子装置100J可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150A、屏蔽横线154G、 第二屏蔽纵线152H、屏蔽横线154E与第三屏蔽纵线156F。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150A与共用电极线160的相对关系可参照前述的实施例，而不在此重述。
具体而言，本实施例不同于图13的实施例之处在于，电子装置100H更包括第三屏蔽纵线156F，其中第三屏蔽纵线156F的设置方式大致相同于图9中的第三屏蔽纵线156F。第三屏蔽纵线156F位于第一屏蔽纵线150A与第二屏蔽纵线152H之间。第三屏蔽纵线156F可以连接于屏蔽横线154E且第三屏蔽纵线156F与屏蔽横线154E交错以构成十字型，但不以此为限。在本实施例中，像素结构140的像素电极144例如具有纵向主干部MV与横向主干部MH，其中第三屏蔽纵线156F在基板110上的正投影可以重叠纵向主干部MV在基板110上的正投影，而屏蔽横线154E在基板110上的正投影可以重叠横向主干部MH在基板110上的正投影，但不以此为限。
图16为本揭露一实施例的电子装置的局部示意图。图16的电子装置100K大致相似于图13的电子装置100H，因此两实施例中所记载的相同构件可参照前述内容。电子装置100K可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150K、屏蔽横线154G与第二屏蔽纵线152K。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150A与共用电极线160的相对关系可参照前述的实施例，而不在此重述。
具体来说，在本实施例中，第一屏蔽纵线150K与第二屏蔽纵线152K的布局方式与图案设计大致相同于图6的第一屏蔽纵线150C与第二屏蔽纵线152C。不过，在电子装置100K中，第一屏蔽纵线150K与第一屏蔽纵线152K可以延伸至重叠共用电极线160的第二线164且在两者的末端由屏蔽横线154G连接在一起。
第一屏蔽纵线150K具有延伸部150K1与重叠部150K2，延伸部150K1在 第一纵向信号线132与第二纵向信号线134之间的间隙中延伸并接触共用电极线160的第一线162与第二线164，而重叠部150K2连接于延伸部150K1且重叠第一纵向信号线132。另外，第二屏蔽纵线152K也具有延伸部152K1与重叠部152K2，延伸部152K1在第三纵向信号线136与第四纵向信号线138之间的间隙中延伸并接触共用电极线160的第一线162，而重叠部152K2连接于延伸部152K1且重叠第三纵向信号线136。在本实施例中，重叠部150K2连接延伸部150K1的中间段，且重叠部152K2连接延伸部152K1的中间段，但不以此为限。
图17为本揭露一实施例的电子装置的局部示意图。图17的电子装置100L大致相似于图13的电子装置100H，因此两实施例中所记载的相同构件可参照前述内容。电子装置100L可包括基板110、多条横向信号线120、多条纵向信号线130、共用电极线160、第一屏蔽纵线150L、屏蔽横线154G与第二屏蔽纵线152L。在此，纵向信号线130可包括第一纵向信号线132、第二纵向信号线134、第三纵向信号线136以及第四纵向信号线138。基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150A与共用电极线160的相对关系可参照前述的实施例，而不在此重述。
在本实施例中，第一屏蔽纵线150L与第二屏蔽纵线152L的布局方式与图案设计大致相同于图7的第一屏蔽纵线150D与第二屏蔽纵线152D。第一屏蔽纵线150L可包括位于第一纵向信号线132与第二纵向信号线134之间的延伸部150L1以及重叠于第一纵向信号线132的重叠部150L2。第二屏蔽纵线152L可包括位于第三纵向信号线136与第四纵向信号线138之间的延伸部152L1以及重叠于第三纵向信号线136的重叠部152L2。另外，第一屏蔽纵线150L的末端与第二屏蔽纵线152L的末端由屏蔽横线154G连接在一起。
图18为本发明一实施例的电子装置的局部示意图。图18的电子装置100M包括基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140、第一屏蔽纵线150M、第二屏蔽纵线152M、屏蔽电极158M以及包括第一线162与第二线164的共用电极线160。在本实施例中，基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号 线138、像素结构140以及共用电极线160大致相同于图2的实施例，因此这些构件的具体结构、材质与相对配置关系可参照图2的相关描述，不在此重述。
在图18中，第一屏蔽纵线150M在基板110的垂直投影位于第一纵向信号线132在基板110的垂直投影与第二纵向信号线134在基板110的垂直投影之间，而第二屏蔽纵线152M在基板110的垂直投影位于第三纵向信号线136在基板110的垂直投影与第四纵向信号线138在基板110的垂直投影之间。另外，第一屏蔽纵线150M与第二屏蔽纵线152M连接于屏蔽电极158M，且第一屏蔽纵线150M与第二屏蔽纵线152M可朝向对应的横向信号线120延伸而横越共用电极线160的第一线162。
屏蔽电极158M例如是整面的电极，且横越第一纵向信号线132及第三纵向信号线136。屏蔽电极158M大致上位于第二纵向信号线134与第四纵向信号线138之间，而不重叠第二纵向信号线134与第四纵向信号线138。屏蔽电极158M在基板110上的正投影重叠像素结构140的像素电极144在基板110上的正投影。屏蔽电极158M、第一屏蔽纵线150M与第二屏蔽纵线152M连成一体，而且可例如由透明导电材料制作。因此，屏蔽电极158M虽重叠像素电极144大部分的面积，但不影响像素结构140的有效显示面积。
图19为本揭露一实施例的电子装置的局部示意图。图19的电子装置100N包括基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、包括主动元件142与像素电极144的像素结构140、第一屏蔽纵线150N、第二屏蔽纵线152N以及包括第一线162与第二线164的共用电极线160。在本实施例中，基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140以及共用电极线160的配置方式、结构与堆叠顺序大致相同于图2的实施例，因此相关描述请参照图2的说明。
在本实施例中，第一屏蔽纵线150N在基板110上的正投影位于第一纵向信号线132在基板110上的正投影与第二纵向信号线134在基板110上的正投影之间，而第二屏蔽纵线152N在基板110上的正投影位于第三纵向信号线136在基板110上的正投影与第四纵向信号线138在基板110上的正投影之间。另外，第一屏蔽纵线150N与第二屏蔽纵线152N都横越且相交于横向信 号线120以及共用电极线160的第一线162与第二线164。
横向信号线120以及共用电极线160可以由相同膜层制作而成，其中横向信号线120所传递的信号是提供给主动元件142的扫描信号，而共用电极线160所传递的信号是共用电位。相交于横向信号线120以及共用电极线160的第一屏蔽纵线150N与第二屏蔽纵线152N必须避免与横向信号线120以及共用电极线160电性短路。因此，第一屏蔽纵线150N与第二屏蔽纵线152N的膜层可以不同于横向信号线120以及共用电极线160的膜层。另外，在本实施例中，第一屏蔽纵线150N与第二屏蔽纵线152N可以通过导通结构TH电性连接至共用电极线160以接收到共用电位，但不以此为限。在一些实施例中，电子装置100N中的导通结构TH可被省略，而第一屏蔽纵线150N与第二屏蔽纵线152N可以延伸到电子装置100N的驱动电路(例如图1所示的驱动电路IC)，而直接由驱动电路提供需要的电位给第一屏蔽纵线150N与第二屏蔽纵线152N。
图20示意性的表示图19的电子装置沿剖线C-C的剖面结构的一种实施方式，而图21示意性的表示图19的电子装置沿剖线D-D的剖面结构的一种实施方式。由图19、图20与图21可知，第一屏蔽纵线150N、绝缘层I0、共用电极线160、绝缘层I1、第一纵向信号线132、绝缘层I2、滤光层CF、绝缘层I3以及像素电极144依序堆叠于基板110上。绝缘层I0、绝缘层I1、绝缘层I2与绝缘层I3的材质可包括无机绝缘材料或是有机绝缘材料，其中无机绝缘材料包括氧化硅、氮化硅或氮氧化硅等，而有机绝缘材料包括聚甲基丙烯酸甲酯(PMMA)、聚乙烯醇(PVA)、聚乙烯酚(PVP)或聚亚酰胺(PI)等。滤光层CF的材质可包括彩色滤光材料，例如红色滤光材料、绿色滤光材料以及蓝色滤光材料。共用电极线160与第一纵向信号线132的材料包括金属或合金。第一屏蔽纵线150N以及像素电极144的材料包括透明导电材料。另外，图19中横向信号线120的膜层相同于共用电极线160的膜层，且图19中第二屏蔽纵线152N在剖面结构中的堆叠方式可相同于第一屏蔽纵线150N。
由图20可知，道通结构TH可将第一屏蔽纵线150N与共用电极线160的第一线162电性连接，且导通结构TH是一个贯穿绝缘层I0的导体结构。如此，第一屏蔽纵线150N的膜层不同于共用电极线160的膜层却可以电性连接至共用电极线160。当共用电极线160与横向信号线120的膜层相同时， 第一屏蔽纵线150N不会连接到横向信号线120，而可使横向信号线120与共用电极线160保持彼此独立的电性。
图22示意性的表示图19的电子装置沿剖线C-C的剖面结构的另一种实施方式，而图23示意性的表示图19的电子装置沿剖线D-D的剖面结构的另一种实施方式。由图19、图22与图23可知，共用电极线160、绝缘层I1、第一屏蔽纵线150N、绝缘层I2、滤光层CF、绝缘层I3以及像素电极144依序堆叠于基板110上。图19中横向信号线120的膜层相同于共用电极线160的膜层，且图19中第二屏蔽纵线152N在剖面结构中的堆叠方式可相同于第一屏蔽纵线150N。在本实施例中，各膜层的材质可参照图20与图21的相关说明。
由图22可知，道通结构TH可将第一屏蔽纵线150N与共用电极线160的第一线162电性连接，且导通结构TH是一个贯穿绝缘层I1的导体结构。如此，第一屏蔽纵线150N的膜层不同于共用电极线160的膜层却可以电性连接至共用电极线160。当共用电极线160与横向信号线120的膜层相同时，第一屏蔽纵线150N不会连接到横向信号线120，而可使横向信号线120与共用电极线160保持彼此独立的电性。
另外，在本实施例中，第一纵向信号线132与第一屏蔽纵线150N都是夹于绝缘层I1与绝缘层I2之间。不过，第一纵向信号线132与第一屏蔽纵线150N可采用不同膜层制作。因此，第一纵向信号线132与第一屏蔽纵线150N可为不同材料的构件。举例来说，第一纵向信号线132的材质可包括金属、合金等材料，而第一屏蔽纵线150N的材质可包括金属氧化物、有积导电材料等透明导电材料。
图24示意性的表示图19的电子装置沿剖线C-C的剖面结构的再一种实施方式，而图25示意性的表示图19的电子装置沿剖线D-D的剖面结构的再一种实施方式。由图19、图24与图25可知，共用电极线160的第一线162与第二线164、绝缘层I1、第一纵向信号线132、绝缘层I2、第一屏蔽纵线150N、滤光层CF、绝缘层I3以及像素电极144依序堆叠于基板110上。图19中横向信号线120的膜层相同于共用电极线160的膜层，且图19中第二屏蔽纵线152N在剖面结构中的堆叠方式可相同于第一屏蔽纵线150N。在本实施例中，各膜层的材质可参照图20与图21的相关说明。在本实施例中， 第一屏蔽纵线150N的膜层设置于绝缘层I2之上，而共用电极线160的膜层设置于绝缘层I1之下。因此，用于将第一屏蔽纵向线150N电性连接于共用电极线160的导通结构TH可以贯穿绝缘层I1与绝缘层I2。
图20、图22与图24分别表示第一屏蔽纵线150N在不同堆叠顺序下的实施方式，但本揭露不以此为限。另外，导通结构TH在部分实施例中可被省略，且第一屏蔽纵线150N与第二屏蔽纵线152N可以延伸到设置于电子装置100N周边的驱动电路以接收需要的信号。
图26为本揭露一实施例的电子装置的上视示意图。图26的电子装置100O包括基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、包括主动元件142与像素电极144的像素结构140、第一屏蔽纵线150O、第二屏蔽纵线152O以及包括第一线162与第二线164的共用电极线160。在本实施例中，基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140以及共用电极线160的配置方式、结构与堆叠顺序大致相同于图19的实施例，因此相关描述请参照图19及其相关内容的说明。
在本实施例中，第一屏蔽纵线150O在基板110上的正投影位于第一纵向信号线132在基板110上的正投影与第二纵向信号线134在基板110上的正投影之间，而第二屏蔽纵线152O在基板110上的正投影位于第三纵向信号线136在基板110上的正投影与第四纵向信号线138在基板110上的正投影之间。第一屏蔽纵线150O与第二屏蔽纵线152O并不重叠横向信号线120，也不重叠共用电极线160的第二线164。
另外，第一屏蔽纵线150O与第二屏蔽纵线152O可不同于共用电极线160的膜层。第一屏蔽纵线150O与第二屏蔽纵线152O可以通过导通结构连接至共用电极线160的第一线162，以接收共用电位。具体而言，第一屏蔽纵线150O与第二屏蔽纵线152O在剖面结构中的堆叠方式可参照图20至图24的说明。换言之，图20至图24的剖面结构也可作为电子装置100O的实施方式。
图27为本揭露一实施例的电子装置的上视示意图。图27的电子装置100P包括基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、包括主动元件142与像素 电极144的像素结构140、第一屏蔽纵线150P、第二屏蔽纵线152P、屏蔽横线154P以及包括第一线162与第二线164的共用电极线160。在本实施例中，基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140以及共用电极线160的配置方式、结构与堆叠顺序大致相同于图2的实施例，因此相关描述请参照图2及其相关内容的说明。
在本实施例中，第一屏蔽纵线150P在基板110上的正投影位于第一纵向信号线132在基板110上的正投影与第二纵向信号线134在基板110上的正投影之间，而第二屏蔽纵线152P在基板110上的正投影位于第三纵向信号线136在基板110上的正投影与第四纵向信号线138在基板110上的正投影之间。屏蔽横线154P由第一屏蔽纵线150P朝横向延伸而横跨第一纵向信号线132与第三纵向信号线136，且屏蔽横线154P连接于第一屏蔽纵线150P与第二屏蔽纵线152P之间。另外，屏蔽横线154P在基板110上的正投影可以重叠共用电极线160的第二线164在基板110上的正投影。
图28示意性的表示图27的电子装置沿剖线E-E的剖面结构的一种实施方式。由图27与图28可知，第一屏蔽纵线150P与屏蔽横线154P、绝缘层I0、共用电极线160、绝缘层I1、第一纵向信号线132、绝缘层I2、滤光层CF、绝缘层I3以及像素电极144依序堆叠于基板110上。绝缘层I0、绝缘层I1、绝缘层I2与绝缘层I3的材质可包括无机绝缘材料或是有机绝缘材料，其中无机绝缘材料包括氧化硅、氮化硅或氮氧化硅等，而有机绝缘材料包括聚甲基丙烯酸甲酯(PMMA)、聚乙烯醇(PVA)、聚乙烯酚(PVP)或聚亚酰胺(PI)等。滤光层CF的材质可包括彩色滤光材料，例如红色滤光材料、绿色滤光材料以及蓝色滤光材料。共用电极线160与第一纵向信号线132的材料包括金属或合金。第一屏蔽纵线150P、屏蔽横线154P以及像素电极144的材料包括透明导电材料。另外，图27中横向信号线120的膜层相同于共用电极线160的膜层，且图27中第二屏蔽纵线152P在剖面结构中的堆叠方式可相同于第一屏蔽纵线150P。另外，由图28可知，屏蔽横线154P与第一纵向信号线132在厚度方向D3上重叠。
图29示意性的表示图27的电子装置沿剖线E-E的剖面结构的一种实施方式。由图27与图29可知，共用电极线160、绝缘层I1、第一纵向信号线 132、绝缘层I2、第一屏蔽纵线150P与屏蔽横线154P、滤光层CF、绝缘层I3以及像素电极144依序堆叠于基板110上。绝缘层I1、绝缘层I2与绝缘层I3的材质可包括无机绝缘材料或是有机绝缘材料，其中无机绝缘材料包括氧化硅、氮化硅或氮氧化硅等，而有机绝缘材料包括聚甲基丙烯酸甲酯(PMMA)、聚乙烯醇(PVA)、聚乙烯酚(PVP)或聚亚酰胺(PI)等。滤光层CF的材质可包括彩色滤光材料，例如红色滤光材料、绿色滤光材料以及蓝色滤光材料。共用电极线160与第一纵向信号线132的材料包括金属或合金。第一屏蔽纵线150P、屏蔽横线154P以及像素电极144的材料包括透明导电材料。另外，图27中横向信号线120的膜层相同于共用电极线160的膜层，且图27中第二屏蔽纵线152P在剖面结构中的堆叠方式可相同于第一屏蔽纵线150P。在本实施例中，屏蔽横线154P在厚度方向D3上重叠第一纵向信号线132，且屏蔽横线154P的膜层与第一纵向信号线132的膜层之间至少设置有绝缘层I2。如此，屏蔽横线154P虽相交于第一纵向信号线132，两线路不会彼此电性连接。
图30为本揭露一实施例的电子装置的局部上视示意图。图30的电子装置100Q包括基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、包括主动元件142与像素电极144的像素结构140、第一屏蔽纵线150Q、第二屏蔽纵线152Q、屏蔽横线154G以及包括第一线162与第二线164的共用电极线160。在本实施例中，基板110、横向信号线120、第一纵向信号线132、第二纵向信号线134、第三纵向信号线136、第四纵向信号线138、像素结构140以及共用电极线160的配置方式、结构与堆叠顺序大致相同于图27的实施例，因此相关描述请参照图27的说明。
在本实施例中，第一屏蔽纵线150Q位于第一纵向信号线132与第二纵向信号线134之间，而第二屏蔽纵线152Q位于第三纵向信号线136与第四纵向信号线138之间。第一屏蔽纵线150Q与第二屏蔽纵线152Q分别可通过导通结构TH电性连接至共用电极线160的第一线162。第一屏蔽纵线150Q与第二屏蔽纵线152Q都不重叠横向信号线120，且屏蔽横线154G连接于第一屏蔽纵线150Q的末端与第二屏蔽纵线152Q的末端之间以构成U字型图案，但不以此为限。另外，屏蔽横线154G可以重叠于共用电极线160的第二线164。 第一屏蔽纵线150Q、第二屏蔽纵线152Q与屏蔽横线154G在剖面上的结构可相同于图28与图29中的第一屏蔽纵线150P、第二屏蔽纵线152P与屏蔽横线154P。
图31为本揭露一实施例的电子装置的局部上视示意图。图31中示出了电子装置200A的基板210、第一纵向信号线232、第二纵向信号线234、第三纵向信号线236、像素结构240的像素电极244、第一屏蔽纵线250A与第二屏蔽纵线252A。具体而言，电子装置200A可以由图31所示的结构阵列排列所组成，且电子装置200A还可包括横向信号线以及像素结构240的主动元件等线路与电路结构，但为了清楚描述纵向线路的设置，图31以省略区块BK标注这些构件所在位置。在部分实施例中，横向信号线以及主动元件的配置方式可参照图2等实施例的说明，但不以此为限。
在本实施例中，像素电极244可包括第一子电极244A与第二子电极244B，且第一子电极244A与第二子电极244B分别位于省略区块BK的相对两侧。第一纵向信号线232与第三纵向信号线236位于像素电极244的周边。第二纵向信号线234则大致重叠像素电极244的第一子电极244A的中央主干部MV。具体而言，第二纵向信号线234在基板210上的正投影大致重叠第一子电极244A在基板110上的正投影的中心线也重叠第二子电极244B在基板110上的正投影的中心线。第一屏蔽纵线250A与第二屏蔽纵线252A分别位于像素电极244的相对两侧。同时，第一屏蔽纵线250A在基板210的垂直投影位于第一纵向信号线232在基板210的垂直投影与第二纵向信号线234在基板210的垂直投影之间，而第二屏蔽纵线252A在基板210的垂直投影位于第三纵向信号线236在基板210的垂直投影与第二纵向信号线234在基板210的垂直投影之间。
图32示意性的表示图31的电子装置200A中，第一屏蔽纵线250A所在位置的剖面的一种实施方式。由图32可知，第一屏蔽纵线250A、绝缘层I1、绝缘层I2以及像素电极244可以依序叠置于基板210上。绝缘层I1与绝缘层I2的材质可包括无机绝缘材料或是有机绝缘材料，其中无机绝缘材料包括氧化硅、氮化硅或氮氧化硅等，而有机绝缘材料包括聚甲基丙烯酸甲酯(PMMA)、聚乙烯醇(PVA)、聚乙烯酚(PVP)或聚亚酰胺(PI)等。第一屏蔽纵线250A以及像素电极244的材质可包括透明导电材料。另外，图31中第一纵 向信号线232、第二纵向信号线234与第三纵向信号线236的膜层可以设置于绝缘层I1与绝缘层I2之间，且图31中第二屏蔽纵线252A在剖面结构中的堆叠方式可相同于第一屏蔽纵线250A。
图33示意性的表示图31的电子装置200A中，第一屏蔽纵线250A所在位置的剖面的另一种实施方式。由图33可知，第一屏蔽纵线250A、绝缘层I1、绝缘层I2以及像素电极244可以依序叠置于基板210上，并且绝缘层I2以及像素电极244之间可以更设置有滤光层CF与第三绝缘层I3。在本实施例中，绝缘层I1、绝缘层I2与绝缘层I3的材质可包括无机绝缘材料或是有机绝缘材料，其中无机绝缘材料包括氧化硅、氮化硅或氮氧化硅等，而有机绝缘材料包括聚甲基丙烯酸甲酯(PMMA)、聚乙烯醇(PVA)、聚乙烯酚(PVP)或聚亚酰胺(PI)等。滤光层CF的材质可包括彩色滤光材料，例如红色滤光材料、绿色滤光材料以及蓝色滤光材料。第一屏蔽纵线250A以及像素电极244的材质可包括透明导电材料。另外，图31中第一纵向信号线232、第二纵向信号线234与第三纵向信号线236的膜层可以设置于绝缘层I1与绝缘层I2之间，且图31中第二屏蔽纵线252A在剖面结构中的堆叠方式可相同于第一屏蔽纵线250A。
在图33中，第一屏蔽纵线250A的膜层位于绝缘层I1与基板210之间。在一些实施例中，第一屏蔽纵线250A与未示出的横向信号线可以由连续堆叠的膜层构成，因此第一屏蔽纵线250A可以连接至横向信号线(未示出)。另外，在其他实施例中，第一屏蔽纵线250A的膜层可以选择的位于绝缘层I2与滤光层CF之间或是滤光层CF与绝缘层I3之间。
图34为本揭露一实施例的电子装置的局部上视示意图。图34中示出了电子装置200B的基板210、第一纵向信号线232、第二纵向信号线234、第三纵向信号线236、像素结构240的像素电极244、第一屏蔽纵线250B与第二屏蔽纵线252B。具体而言，电子装置200B可以由图34所示的结构阵列排列所组成，且电子装置200B还可包括横向信号线以及像素结构240的主动元件等线路与电路结构，但为了清楚描述纵向线路的设置，图34以省略区块BK标注这些构件所在位置。在部分实施例中，横向信号线以及主动元件的配置方式可参照图2等实施例的说明。
电子装置200B相似于电子装置200A，因此两实施例中相同的元件符号 表示相同的构件而可彼此参照。具体而言，电子装置200B不同于电子装置200A之处主要在于第一屏蔽纵线250B与第二屏蔽纵线252B的布局方式。在本实施例中，像素电极244可包括第一子电极244A与第二子电极244B，第一子电极244A与第二子电极244B位于省略区块的相对两侧且第一屏蔽纵线250B与第二屏蔽纵线252B都不重叠第二子电极244B。换言之，第一屏蔽纵线250B与第二屏蔽纵线252B仅重叠第一子电极244A。第一屏蔽纵线250B与第二屏蔽纵线252B位于第一子电极244A的相对两侧。第一屏蔽纵线250B位于第一纵向信号线232与第二纵向信号线234之间，而第二屏蔽纵线252B位于第二纵向信号线234与第三纵向信号线236之间。第一屏蔽纵线250B与第二屏蔽纵线252B在剖面中的堆叠顺述可参照图32与图33中第一屏蔽纵线250A的说明。
图35为本揭露一实施例的电子装置的局部上视示意图。图34中示出了电子装置200C的基板210、第一纵向信号线232、第二纵向信号线234、第三纵向信号线236、像素结构240的像素电极244、第一屏蔽纵线250C与第二屏蔽纵线252C。具体而言，电子装置200C相似于电子装置200A，因此两实施例中相同的元件符号表示相同的构件而可彼此参照。
电子装置200C不同于电子装置200A之处主要在于第一屏蔽纵线250C与第二屏蔽纵线252C的布局方式。在本实施例中，像素电极244可包括第一子电极244A与第二子电极244B，第一子电极244A与第二子电极244B位于省略区块的相对两侧且第一屏蔽纵线250C与第二屏蔽纵线252C都不重叠第一子电极244A。换言之，第一屏蔽纵线250C与第二屏蔽纵线252C仅重叠第二子电极244B。第一屏蔽纵线250C与第二屏蔽纵线252C位于第二子电极244B的相对两侧。第一屏蔽纵线250C位于第一纵向信号线232与第二纵向信号线234之间，而第二屏蔽纵线252C位于第二纵向信号线234与第三纵向信号线236之间。第一屏蔽纵线250C与第二屏蔽纵线252C在剖面中的堆叠顺述可参照图32与图33中第一屏蔽纵线250A的说明。
图36为本揭露一实施例的电子装置的局部上视示意图。图36中示出了电子装置300A的基板310、第一纵向信号线332、第二纵向信号线334、第三纵向信号线336、像素结构340的像素电极344、第一屏蔽纵线350A与第二屏蔽纵线352A。具体而言，电子装置300A可以由图36所示的结构阵列排 列所组成，且电子装置300A还可包括横向信号线以及像素结构240的主动元件等线路与电路结构，但为了清楚描述纵向线路的设置，图36以省略区块BK标注这些构件所在位置。在部分实施例中，横向信号线以及主动元件的配置方式可参照图2等实施例的说明。
图36示出两个像素结构340，且第一纵向信号线332、第二纵向信号线334与第三纵向信号线336位于两个像素结构340之间。第二纵向信号线334位于第一纵向信号线332与第三纵向信号线336之间。在本实施例中，第一屏蔽纵线350A在基板310的垂直投影位于第一纵向信号线332在基板310的垂直投影与第二纵向信号线334在基板310的垂直投影之间，而第二屏蔽纵线352A在基板310的垂直投影位于第二纵向信号线334在基板310的垂直投影与第三纵向信号线336在基板310的垂直投影之间。因此，第一屏蔽纵线350A在基板310的垂直投影位于像素电极344在基板310的垂直投影之外，且第二屏蔽纵线352A在基板310的垂直投影位于像素电极344在基板310的垂直投影之外。
在本实施例中，第一屏蔽纵线350A与第二屏蔽纵线352A例如都是透明走线。换言之，第一屏蔽纵线350A与第二屏蔽纵线352A是由透明导电材料制作。另外，像素电极344也是由透明材料制作。在部分实施例中，像素电极344、第一屏蔽纵线350A与第二屏蔽纵线352A可以为相同膜层，但在其他实施例中，像素电极344的膜层可不同于第一屏蔽纵线350A与第二屏蔽纵线352A的膜层。
图37示意性的表示电子装置300中第一屏蔽纵线350A所在处的剖面结构的一种实施方式。由图37可知，绝缘层I1、绝缘层I2、第一屏蔽纵线350A与绝缘层I3可依序叠置于基板310上。绝缘层I1、绝缘层I2与绝缘层I3的材质可包括无机绝缘材料或是有机绝缘材料，其中无机绝缘材料包括氧化硅、氮化硅或氮氧化硅等，而有机绝缘材料包括聚甲基丙烯酸甲酯(PMMA)、聚乙烯醇(PVA)、聚乙烯酚(PVP)或聚亚酰胺(PI)等。配置于绝缘层I2与绝缘层I3之间的第一屏蔽纵线350A可例如以透明导电材料制作。在本实施例中，第一纵向信号线332、第二纵向信号线334与第三纵向信号线336的膜层可以位在绝缘层I1与绝缘层I2之间，而未示出的横向信号线的膜层可以位在基板310与绝缘层I1之间。另外，像素电极344的膜层可设置于绝缘层I3 之上，换言之，绝缘层I3可以设置于像素电极344的膜层与第一屏蔽纵线350A的膜层之间。
图38示意性的表示电子装置300中第一屏蔽纵线350A所在处的剖面结构的另一种实施方式。图38的剖面结构相似于图37的剖面结构，因此两实施例中以相同的元件符号表示相同的构件。由图38可知，绝缘层I1、绝缘层I2、第一屏蔽纵线350A、滤光层CF与绝缘层I3可依序叠置于基板310上。绝缘层I1、绝缘层I2、第一屏蔽纵线350A与绝缘层I3的堆叠顺序与材质等说明可参照图37的相关描述。滤光层CF的材质可包括彩色滤光材料，例如红色滤光材料、绿色滤光材料以及蓝色滤光材料。
图39示意性的表示电子装置300的剖面结构的另一种实施方式。图39除了示出图36中的第一纵向信号线332、像素电极344与第一屏蔽纵线350A之外，还将省略区块BK中所设置的横向信号线320也示出，以说明电子装置300中各构件的堆叠关系。由图39可知，横向信号线320、绝缘层I1、第一纵向信号线332、绝缘层I2与像素电极344可以依序叠置于基板310上，且像素电极344与第一纵向信号线332可以为相同膜层。
综上所述，本发明实施例的电子装置中在不同信号线之间设置屏蔽线路(例如第一屏蔽纵线、第二屏蔽纵线等)。屏蔽线路可连接至共用电位以提供信号屏蔽作用，从而减轻信号线之间的干扰。因此，本揭露实施例的电子装置可具有较佳的品质。
当然，本发明还可有其它多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员当可根据本发明做出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。
工业应用性
本发明实施例的电子装置中，于传递不同信号的相邻线路之间设置屏蔽走线，以降低线路之间的耦合造成的不良影响。此外，在部分实施例中，屏蔽走线可以为透明走线。因此，电子装置用以显示画面时，其显示开口率可不受屏蔽走线影响而缩减。

Claims (20)

  1. 一种电子装置，其特征在于，包括：
    基板；
    多条横向信号线，配置于该基板上；
    第一纵向信号线，配置于该基板上，与该多条横向信号线相交；
    第二纵向信号线，配置于该基板上，与该多条横向信号线相交，且该第二纵向信号线连接该多条横向信号线的其中一条；以及
    第一屏蔽纵线，配置于该基板上，该第一屏蔽纵线在该基板的垂直投影位于该第一纵向信号线在该基板的垂直投影与该第二纵向信号线在该基板的垂直投影之间。
  2. 如权利要求1所述的电子装置，其特征在于，更包括多个像素结构，配置于该基板上，该多个像素结构的其中一者被该多条横向信号线的相邻两条以及该第二纵向信号线围绕且包括像素电极，其中该像素电极于垂直该基板方向上重叠该第一纵向信号线或该第二纵向信号线。
  3. 如权利要求2所述的电子装置，其特征在于，该像素电极重叠该第一屏蔽纵线。
  4. 如权利要求2所述的电子装置，其特征在于，该像素电极横跨该第二纵向信号线，该像素电极具有中央主干部，且该第二纵向信号线重叠该中央主干部。
  5. 如权利要求1所述的电子装置，其特征在于，该第一屏蔽纵线为透明走线。
  6. 如权利要求1所述的电子装置，其特征在于，更包括共用电极线，配置于该基板上，该共用电极线位于该多条横向信号线的相邻两条之间。
  7. 如权利要求6所述的电子装置，其特征在于，该共用电极线与该第一纵向信号线及该第二纵向信号线相交。
  8. 如权利要求6所述的电子装置，其特征在于，该第一屏蔽纵线与该共用电极线彼此直接堆叠。
  9. 如权利要求6所述的电子装置，其特征在于，更包括至少一绝缘层以及贯穿该至少一绝缘层的导通结构，该至少一绝缘层配置于该第一屏蔽纵线 与该共用电极线之间，且该导通结构将该第一屏蔽纵线与该共用电极线电性连接。
  10. 如权利要求6所述的电子装置，其特征在于，更包括多个像素结构，配置于该基板上，该多个像素结构的其中一者位于该多条横向信号线的相邻两条之间且包括像素电极，其中该第一屏蔽纵线的膜层位于该共用电极线的膜层与该像素电极的膜层之间。
  11. 如权利要求6所述的电子装置，其特征在于，更包括多个像素结构，配置于该基板上，该多个像素结构的其中一者位于该多条横向信号线的相邻两条之间且包括像素电极，其中该共用电极线的膜层位于该第一屏蔽纵线的膜层与该像素电极的膜层之间。
  12. 如权利要求6所述的电子装置，其特征在于，该共用电极线包括第一线以及第二线，且该第一屏蔽纵线重叠该第一线、该第二线或两者。
  13. 如权利要求1所述的电子装置，其特征在于，更包括第二屏蔽纵线，该第一纵向信号线位于该第一屏蔽纵线与该第二屏蔽纵线之间。
  14. 如权利要求13所述的电子装置，其特征在于，更包括第三纵向信号线，该第三纵向信号线位于该第一纵向信号线与该第二屏蔽纵线之间。
  15. 如权利要求14所述的电子装置，其特征在于，更包括第四纵向信号线，该第一纵向信号线与该第三纵向信号线在该基板的垂直投影位于该第二纵向信号线在该基板的垂直投影与该第四纵向信号线在该基板的垂直投影之间。
  16. 如权利要求1所述的电子装置，其特征在于，更包括屏蔽电极，连接该第一屏蔽纵线。
  17. 如权利要求1所述的电子装置，其特征在于，该第一屏蔽纵线完全位于该多条横向信号线的相邻两条之间。
  18. 如权利要求1所述的电子装置，其特征在于，更包括：
    多个像素结构，配置于该基板上，该多个像素结构的其中一者包括像素电极，其中该第一屏蔽纵线在该基板的垂直投影位于该像素电极在该基板的垂直投影之外。
  19. 如权利要求1所述的电子装置，其特征在于，更包括多个像素结构及第三纵向信号线，该多个像素结构阵列配置于该基板上，该第二纵向信号 线位于该第三纵向信号线与该第一纵向信号线之间，且该第一纵向信号线、该第二纵向信号线与该第三纵向信号线位于该多个像素结构的相邻两行之间。
  20. 如权利要求19所述的电子装置，其特征在于，更包括第二屏蔽纵线，配置于该基板上，该第二屏蔽纵线在该基板的垂直投影位于该第二纵向信号线在该基板的垂直投影与该第三纵向信号线在该基板的垂直投影之间。
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