WO2009119500A1 - ガス供給装置、処理装置、処理方法、及び記憶媒体 - Google Patents

ガス供給装置、処理装置、処理方法、及び記憶媒体 Download PDF

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Publication number
WO2009119500A1
WO2009119500A1 PCT/JP2009/055658 JP2009055658W WO2009119500A1 WO 2009119500 A1 WO2009119500 A1 WO 2009119500A1 JP 2009055658 W JP2009055658 W JP 2009055658W WO 2009119500 A1 WO2009119500 A1 WO 2009119500A1
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Prior art keywords
gas
flow space
gas flow
supply device
gas supply
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PCT/JP2009/055658
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English (en)
French (fr)
Japanese (ja)
Inventor
津田　栄之輔
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020107007834A priority Critical patent/KR101240110B1/ko
Priority to US12/934,473 priority patent/US20110098841A1/en
Priority to CN2009801008385A priority patent/CN101842880B/zh
Publication of WO2009119500A1 publication Critical patent/WO2009119500A1/ja
Anticipated expiration legal-status Critical
Priority to US14/244,507 priority patent/US20140209023A1/en
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/4673—Plural tanks or compartments with parallel flow

Definitions

  • the present invention relates to a gas supply apparatus for supplying a processing gas to a substrate, a processing apparatus including the gas supply apparatus, a processing method using the gas supply apparatus, and a storage medium.
  • a gas shower head is used as a gas supply device to a device that performs CVD (chemical vapor deposition) and etching.
  • This gas shower head is formed in a flat cylindrical shape, diffuses the gas supplied from the gas introduction port provided in the upper part in the internal diffusion space, and forms a shower from a number of holes formed in the lower surface. Supply.
  • a gas shower head that supplies a plurality of types of processing gas a so-called premix system that supplies a mixture of a plurality of types of processing gas in the middle of a single gas flow path, and a plurality of types of gases.
  • the supply of a plurality of types of processing gases is divided into two steps, for example, a first step for supplying a first processing gas, and a second step for supplying a second processing gas.
  • a so-called ALD Atomic Layer Deposition
  • ALD Atomic Layer Deposition
  • the gas flow path in the shower head is complicated and narrow, so the conductance is low and the gas replacement property is poor. For this reason, in the case of ALD, the above-described post-mix type shower head is used in order to avoid a reaction product from being generated by mixing a plurality of processing gases supplied before and after in the shower head. .
  • FIG. 17 shows a longitudinal side surface of an example of the gas shower head.
  • the gas shower head 1 has a laminated structure in which a plurality of members such as a flat circular shower plate 11, a main body 12, and a base member 13 are joined.
  • the first gas supplied from the first gas supply pipe 14A diffuses into the gas diffusion space 15A formed between the main body 12 and the base member 13, and is supplied to the first discharge port 16A.
  • the second gas supplied from the second gas supply pipe 14B diffuses into the gas diffusion space 15B formed between the main body member 12 and the shower plate 11, and is supplied to the second discharge port 16B.
  • the first gas and the second gas are independently discharged from the discharge ports 16A and 16B so as not to be mixed in the gas shower head 1.
  • the process of supplying the purge gas between the process gas switching is as short as possible.
  • next processing gas is supplied in a state where the previously supplied processing gas remains in the shower head, the residual gas flows out into the processing space of the wafer.
  • the processing gas supplied first and the processing gas supplied next react on the surface of the gas shower head 1 to deposit.
  • there is a risk of particle contamination, or reaction products may directly adhere to the wafer as particles, and the film formation process of the wafer W may not be performed normally. Therefore, the purge time cannot be shortened so much and it is difficult to improve the throughput.
  • the processing space around the wafer W is heated in order to heat the wafer to a predetermined temperature. Therefore, as a material constituting the gas shower head 1, it may be preferable to use a material such as a mixture of SiC and aluminum having a low coefficient of thermal expansion or ceramics.
  • the gas shower head has a complicated laminated structure and needs to form fine flow paths. In particular, it is necessary to drill a large number of holes in the shower plate 11, and it is difficult to perform such fine processing on the above-described materials. For this reason, there is a problem that the shower plate 11 is difficult to manufacture or the materials that can be used for manufacturing are limited.
  • Japanese Patent Application Laid-Open No. 7-22323 describes a vapor phase growth apparatus that supplies various gases from channels extending downward. However, Japanese Patent Application Laid-Open No. 7-22323 does not describe a solution for the above-described problem that occurs when gases are replaced with each other. JP-A-7-22323
  • the present invention has been made in consideration of such points, and in supplying a gas to a substrate to perform gas processing, a gas supply capable of performing high-speed gas replacement in the flow path inside the substrate. It is an object of the present invention to provide an apparatus, a processing apparatus including the gas supply device, a processing method using the gas supply device, and a storage medium.
  • the present invention provides a gas supply device that is disposed to face a substrate in a processing container and supplies gas to the substrate to perform gas processing, and has a reduced diameter end and an enlarged diameter end, and has a substantially conical shape.
  • a main body portion having a gas flow space through which the gas flows from the reduced diameter end side to the enlarged diameter end side, and provided on the reduced diameter end side of the gas flow space of the main body portion,
  • the gas supply device is characterized in that the degree of the spread of one partition member is larger than the extent of the spread of a partition member adjacent to the inside in the radial direction.
  • a gas introduction path extending in the axial direction of the gas flow space is formed on the upstream side of the gas flow space in the main body, and the gas introduction port is located on the upstream side of the gas flow path.
  • a gas supply device is provided.
  • the present invention is the gas supply device, wherein the partition member is supported by a support member extending radially inward from the inner peripheral surface of the main body.
  • the gas flow space is partitioned into a plurality of flow paths by the partition member, and each of the flow paths has a conductance of a radially inner flow path smaller than a conductance of a radially outer flow path.
  • the gas supply device is characterized in that it is set to.
  • the present invention is a gas supply device characterized in that an airflow control member for preventing gas from flowing into the central region is provided in a central region in the radial direction of the gas flow space.
  • the present invention divides the gas introduction path into an inner area and an outer area in the radial direction, and a plurality of openings for diffusing the gas supplied to the inner area to the outer area.
  • the gas supply device is characterized in that a partition member is formed, and gas from the gas introduction port is supplied to the inner region.
  • the present invention is the gas supply device, wherein the partition member is connected to the upstream end of the partition member.
  • the present invention provides a gas supply device that is disposed to face a substrate in a processing container and supplies gas to the substrate to perform gas processing, and has a reduced diameter end and an enlarged diameter end, and has a substantially conical shape.
  • a main body portion having a gas flow space through which the gas flows from the reduced diameter end side to the enlarged diameter end side, and provided on the reduced diameter end side of the gas flow space of the main body portion,
  • a gas introduction port for introducing the gas into the gas flow space, and a plurality of partition members provided in the gas flow space of the main body portion and for partitioning the gas flow space in the circumferential direction
  • a gas supply device is disposed to face a substrate in a processing container and supplies gas to the substrate to perform gas processing, and has a reduced diameter end and an enlarged diameter end, and has a substantially conical shape.
  • a gas introduction path extending in the axial direction of the gas flow space is formed on the upstream side of the gas flow space in the main body, and the gas introduction port is located on the upstream side of the gas flow path.
  • a gas supply device is provided.
  • the plurality of partition members are configured to discharge the gas from the enlarged diameter end of the gas flow space while forming a swirl that rotates in a circumferential direction of the main body.
  • This is a gas supply device.
  • the present invention is the gas supply device, wherein the partition member extends in a radial direction from a center of the gas flow space.
  • the present invention is the gas supply device, wherein the partition member is provided from the reduced diameter end to the enlarged diameter end in the gas flow space.
  • the present invention is a gas supply device that is disposed to face a substrate in a processing container and supplies gas to the substrate to perform gas processing, and a main body having a gas flow space for allowing the gas to flow therethrough A gas inlet port for introducing the gas into the gas flow space, and a downstream of the gas flow space of the main body portion.
  • a gas supply comprising: a plate-like member provided on an end side and having a plurality of concentrically opened slits for supplying the gas supplied to the gas flow space to the substrate. Device.
  • a gas introduction path extending in the axial direction of the gas flow space is formed on the upstream side of the gas flow space in the main body, and the gas introduction port is located on the upstream side of the gas flow path.
  • a gas supply device is provided.
  • the present invention is the gas supply device, wherein the slit is formed such that an opening width thereof increases from a center portion of the plate-shaped member toward a peripheral portion.
  • the present invention is a gas supply device characterized in that a temperature control means is provided in the main body.
  • the present invention provides a mounting table for mounting a substrate, a processing container in which the mounting table is provided, a counter for the mounting table, and processing the substrate in the processing container.
  • a gas supply device for supplying a processing gas; and an exhaust means for exhausting the inside of the processing container.
  • the gas supply device has a reduced diameter end and an enlarged diameter end, and has a substantially conical shape.
  • a main body having a gas flow space through which the gas flows from the end side to the enlarged diameter end side; and the gas flow space provided on the reduced diameter end side of the gas flow space in the main body portion.
  • a gas introduction port for introducing the gas into the gas flow space, and a plurality of partition members that are provided in the gas flow space of the main body and divide the gas flow space concentrically, The extent of the end of the partition member is the partition member adjacent to the inside in the radial direction.
  • a processing apparatus characterized by greater than the degree diverging.
  • the present invention is connected to the gas introduction port of the gas supply device, and is connected to a plurality of processing gas flow paths for supplying a plurality of types of processing gases, and to the gas introduction port of the gas supply device,
  • a controller that sequentially and cyclically supplies and controls the gas supply device to perform the inert gas supply step between the supply step of one process gas and the supply step of another process gas.
  • a layer formed of reaction products of the plurality of types of processing gases is sequentially stacked on the surface of the substrate to form a thin film.
  • the present invention supplies a gas for processing the substrate into the processing container from a step of mounting the substrate on a mounting table inside the processing container and a gas supply device provided facing the mounting table. And a step of evacuating the inside of the processing container, wherein the gas supply device has a reduced diameter end and an enlarged diameter end, and has a substantially conical shape, and the enlarged diameter end from the reduced diameter end side.
  • a main body portion having a gas flow space through which the gas flows, and a gas flow space provided on the reduced diameter end side of the gas flow space in the main body portion to introduce the gas into the gas flow space
  • a gas introduction port and a plurality of partition members provided in the gas flow space of the main body portion and concentrically dividing the gas flow space, and the extent of the end of one partition member is , Larger than the extent of expansion of the partition member adjacent to the inside in the radial direction It is a process wherein the Kunar.
  • the process gas supply step includes supplying a plurality of types of process gases in order and cyclically, and between a process gas supply step and another process gas supply step. And a step of supplying an active gas, wherein a thin film is formed by sequentially laminating layers of reaction products of the plurality of types of processing gases on the surface of the substrate. .
  • the present invention is a storage medium for storing a computer program used on a processing method and operating on a computer, the processing method comprising a step of mounting a substrate on a mounting table inside a processing container, and the mounting table described above
  • a main body having a gas flow space through which the gas flows from the diameter-reduced end side to the diameter-expanded end side, and having a diameter end and an enlarged diameter end;
  • a gas introduction port provided on the reduced diameter end side of the gas flow space, for introducing the gas into the gas flow space, and provided in the gas flow space of the main body;
  • Has a partition member, a degree divergent one partition member is a storage medium characterized by greater than the degree diverging partition member adjacent radially inwardly.
  • the gas supply device of the present invention is easy to manufacture because it is not a structure that requires precise and complicated processing for each stage member as in the prior art. For this reason, there is also an advantage that the degree of freedom of selection of usable materials is great.
  • ALD a film forming method
  • the gas in the gas supply device is replaced with a purge gas. Can be performed at high speed, which can contribute to an improvement in throughput.
  • FIG. 1 is a longitudinal sectional view of a film forming apparatus provided with a first embodiment of a gas supply unit which is a gas supply apparatus of the present invention.
  • FIG. 2 is a longitudinal sectional view of the gas supply unit.
  • FIG. 3 is a cross-sectional view of the gas supply unit.
  • FIG. 4 is a longitudinal sectional perspective view of the gas supply unit.
  • FIG. 5 is a perspective view of the gas supply unit as viewed from the lower surface side.
  • FIG. 6 is a diagram showing vortex flow in the gas flow space of the gas supply unit.
  • 7A to 7D are process diagrams of an ALD process performed using the film forming apparatus.
  • FIGS. 8A to 8C are explanatory views showing a first modification of the gas supply unit.
  • FIGS. 9A and 9B are explanatory views showing a second modification of the gas supply unit.
  • FIGS. 10A and 10B are explanatory views showing a third modification of the gas supply unit.
  • FIGS. 11A to 11C are explanatory views showing a second embodiment of the gas supply unit.
  • FIG. 12 is a longitudinal perspective view showing a third embodiment of the gas supply unit.
  • FIGS. 13A and 13B are a bottom view and a lower perspective view showing the lower side of the gas supply unit of the third embodiment.
  • FIG. 14 is a vertical perspective view showing the structure around the gas introduction port of the gas supply unit.
  • FIGS. 15A and 15B are views showing the gas concentration distribution in the processing space in the simulation of the evaluation test.
  • FIG. 16 is a perspective view of a gas channel model used in the simulation of the evaluation test.
  • FIG. 17 is a longitudinal sectional view of a conventional gas shower head.
  • the film forming apparatus 2 includes, for example, a source gas containing strontium (Sr) as a first process gas (hereinafter referred to as Sr source gas) and a source gas containing titanium (Ti) as a second process gas. (Hereinafter referred to as Ti source gas), these gases are reacted with ozone (O 3 ) gas, which is an oxidizing gas as a third processing gas, and a semiconductor wafer (hereinafter referred to as wafer) as a substrate by an ALD process. It has a function of forming a thin film of strontium titanate (SrTiO 3 , hereinafter abbreviated as STO), which is a high dielectric material, on the W surface.
  • Sr source gas a source gas containing strontium (Sr) as a first process gas
  • Ti titanium
  • ozone (O 3 ) gas which is an oxidizing gas as a third processing gas
  • wafer semiconductor wafer
  • the film forming apparatus 2 includes a processing container 21.
  • a mounting table 22 for mounting the wafer W horizontally is provided in the processing container 21.
  • a heater 22 a serving as a temperature control unit for the wafer W is provided in the mounting table 22.
  • the mounting table 22 is provided with three lifting pins 22c (only two are shown for convenience) that can be lifted and lowered by a lifting mechanism 22b.
  • the wafer W is transferred between the wafer transfer mechanism (not shown) outside the film forming apparatus 2 and the mounting table 22 through the lift pins 22c.
  • the one end side of the exhaust pipe 23 is connected to the bottom of the processing vessel 21.
  • An exhaust means 24 composed of a vacuum pump or the like is connected to the other end side of the exhaust pipe 23.
  • the exhaust means 24 has a pressure adjusting mechanism (not shown), and can receive a control signal from the control unit 3A (described later) to maintain the pressure in the processing container 21 at a predetermined pressure during the film forming process. Yes.
  • a transfer port 25 that is opened and closed by a gate valve G is formed on the side wall of the processing vessel 21.
  • S is a processing space around the wafer W placed on the mounting table 22.
  • the gas supply unit 3 constituting the gas supply device of the present invention is provided above the processing container 21 so as to face the wafer W mounted on the mounting table 22.
  • the gas supply unit 3 will be described with reference to FIGS. 2 to 4 which are longitudinal side views thereof.
  • the gas supply unit 3 has a main body 31 formed in an inverted T shape when viewed from the side. That is, the main body portion 31 is formed in a cylindrical shape having a flat large diameter on the lower side and a cylindrical shape having a small diameter on the upper side.
  • a gas flow space 32 is formed in the main body 31 from the upper side to the lower side.
  • the gas flow space 32 has a generally conical shape that widens from the upper side toward the lower side.
  • partition members 41 to 46 are provided from the reduced diameter end 32a side to the enlarged diameter end 32b side of the gas flow space 32.
  • Each of the partition members 41 to 46 has a cylindrical shape whose diameter is increased from the reduced diameter end 32a side toward the enlarged diameter end 32b side.
  • the partition members 41 to 46 have different diameters, and are arranged in the order of the partition members 41, 42, 43, 44, 45, and 46 from the inner side to the outer side in the radial direction of the gas flow space 32.
  • the partition members 41 to 46 partition the gas flow space 32 concentrically to form gas flow paths 51 to 57.
  • the extent of the expansion of one partition member (the magnitude of the angle with respect to the axial direction of the gas flow space 32) is larger than the extent of the expansion of the partition members adjacent to the inside in the radial direction. ing. That is, when the partition members 41 to 46 are arranged in descending order, the partition member 46> the partition member 45> the partition member 44> the partition member 43> the partition member 42> the partition member 41.
  • FIG. 3 is a cross-sectional view taken along the line AA in FIG. 2, and FIG. 5 is a perspective view of the main body 31 viewed from below.
  • the partition members 41 to 46 are supported by a plurality of support members 48 and 49 at their upper and lower ends, respectively.
  • the support members 48 and 49 extend in the radial direction in the gas flow space 32 from the inner peripheral surface 33 of the main body 31 toward the partition member 41 side. That is, the support members 48 and 49 spread radially from the inner partition member 41 toward the inner peripheral surface 33 of the main body 31.
  • the support members 48 and 49 have a role of supporting the partition members 41 to 46, and transmit heat from, for example, a temperature adjusting means such as the heater 34 provided in the main body 31, to the partition members 41 to 46.
  • the processing gas is cooled on the surface of the partition members 41 to 46, and has a role of preventing film formation on the surface.
  • the heater 34 is provided in the main body 31 so as to surround the gas flow space 32 and the partition members 41 to 46, for example.
  • the support members 48 and 49 are not shown in FIG.
  • a gas introduction path 35 is formed on the upstream side of the gas flow space 32 in the main body 31 so as to extend in the axial direction of the gas flow space 32.
  • gas introduction ports 61a, 61b, 62a, 62b, 63a, 63b for supplying gas to the gas flow space 32 through the gas introduction path 35 are provided.
  • the gas introduction ports 61a, 62a, 63a are formed in this order from the top to the bottom, and the gas introduction ports 61b, 62b, 63b are formed in this order from the top to the bottom.
  • Each of the gas introduction ports 61a to 63a, 61b to 63b has a circular vertical cross section as shown in FIG. 4, for example, and has a hole opened toward the side of the main body 31.
  • the gas introduction ports 61a to 63a and the gas introduction ports 61b to 63b are It is arranged so as to be displaced.
  • the gases supplied from the gas introduction ports 61a to 63a and 61b to 63b travel downward while forming a vortex that rotates in the circumferential direction in the gas introduction path 35 as shown in FIG.
  • the height h1 of the gas introduction path 35 of the main body 31 is, for example, 80 mm
  • the height h2 from the reduced diameter end 32a of the gas flow space 32 to the upper ends of the partition members 41 to 46 is, for example, 20 mm. It is.
  • the height h3 from the upper end to the lower end of the partition members 41 to 46 is, for example, 30 mm.
  • the diameter R of the enlarged diameter end 32b of the gas flow space 32 is, for example, 300 mm.
  • gas supply lines 71 to 73 for supplying various gases are connected to the gas introduction ports 61a to 63a and 61b to 63b. That is, the gas introduction ports 61a and 61b are connected to the Sr source gas supply line 71, the gas introduction ports 62a and 62b are connected to the Ti source gas supply line 72, and the gas introduction ports 63a and 63b are connected to the ozone gas supply line 73, respectively.
  • the Sr source gas supply line 71 is connected to an Sr source supply source 7A, and for example, Sr (THD) 2 (strontium bistetramethylheptanedionate) or Sr (Me 5 Cp) 2 (bis Liquid Sr raw materials such as pentamethylcyclopentadienyl strontium) are stored.
  • Sr (THD) 2 sinrontium bistetramethylheptanedionate
  • Sr (Me 5 Cp) 2 bis Liquid Sr raw materials such as pentamethylcyclopentadienyl strontium
  • the Ti source gas supply line 72 is connected to a Ti source supply source 7B, and for example, Ti (OiPr) 2 (THD) 2 (titanium bisisopropoxide bistetramethylheptanedionate) or Ti Ti raw material such as (OiPr) (titanium tetraisopropoxide) is stored, and Ti raw material gas vaporized by a vaporizer (not shown) is supplied as in the case of Sr raw material.
  • TDD titanium bisisopropoxide bistetramethylheptanedionate
  • Ti Ti raw material such as (OiPr) (titanium tetraisopropoxide
  • the ozone gas supply line 73 is connected to, for example, an ozone gas supply source 7C. Further, the Sr source gas supply line 71, the Ti source gas supply line 72, and the ozone gas supply line 73 are branched in the middle of the path and connected to the Ar (argon) gas supply source 7D, and together with the respective processing gases, Ar Gas can be supplied to the gas introduction ports 61a to 63a and 61b to 63b.
  • the upstream end 35 a of the gas introduction path 35 is opened at the upper part of the main body 31 to form a gas introduction port 64.
  • One end of a gas supply line 74 is connected to the gas introduction port 64.
  • the other end of the gas supply line 74 is connected to the Ar gas supply source 7D.
  • This gas supply line 74 promotes the gas flow in the gas flow space 32 by supplying Ar gas to the gas flow space 32, and in the film forming process described later, gas introduction ports 61a to 63a, 61b.
  • the film is efficiently formed by the processing gas supplied from .about.63b, and the purge process has a role of shortening the time required for the purge.
  • the Ar gas from the gas supply line 74 is called a counter gas.
  • Each gas supply line 71-74 is provided with a flow control device group 75, 76 consisting of valves, flow meters, etc., and supply timings and supply amounts of various gases based on instructions from the control unit 3A described later. Is controlled.
  • the film forming apparatus 2 is provided with a control unit 3A composed of, for example, a computer, and the control unit 3A includes a program.
  • a command (each step) is incorporated so that a control signal is sent from the control unit 3A to each unit of the film forming apparatus 2 and the processing of the wafer W proceeds.
  • This program (including programs related to processing parameter input operations and display) is stored in the storage unit 3B including a computer storage medium such as a flexible disk, a compact disk, a hard disk, and an MO (magneto-optical disk) and installed in the control unit 3A. Is done.
  • the wafer W is loaded into the processing container 21 through the transfer port 25 by an external wafer transfer mechanism.
  • the wafer W is mounted on the mounting table 22 via the lift pins 22c.
  • the wafer W is heated to a predetermined temperature and the processing chamber 21 is evacuated to a predetermined pressure.
  • the STO film forming process by the ALD process is executed based on the gas supply sequence shown in FIGS. 7 (a) to 7 (d).
  • the white columns shown in FIGS. 7A to 7C show the supply amount of the processing gas (Sr source gas, Ti source gas, ozone gas) from the gas supply lines 71 to 73, respectively. Yes. Also, the columns filled with hatched hatching in FIGS. 7A to 7D indicate the supply amounts of Ar gas from the gas supply lines 71 to 74, respectively.
  • Sr source gas and Ar gas are supplied from the Sr source gas supply line 71 and Ar gas is supplied from the gas supply line 74 to the gas flow space 32 via the gas introduction path 35, respectively.
  • Sr source gas supply step in order to prevent Sr source gas from flowing into each gas introduction port and forming a film, Ti source gas supply line 72 and A small amount of Ar gas is also supplied from the ozone gas supply line 73 to the gas introduction path 35.
  • Ar gas is supplied from a gas introduction port not used for film formation for the same reason.
  • the Sr source gas and Ar gas supplied to these gas introduction paths 35 form a vortex that rotates in the circumferential direction of the main body 31 as described above, and travel downstream through the gas introduction path 35 to enter the gas flow space 32. Inflow. These gases are dispersed in the gas flow paths 51 to 57 partitioned by the partition members 41 to 46 as shown by arrows in FIG. 2 and supplied to the surface of the wafer W, and the molecules constituting the Sr source gas are transferred to the wafer W. Adsorb to. Excess Sr source gas and Ar gas are exhausted through the exhaust pipe 23 and removed from the processing space S.
  • the Ti source gas and the Ar gas are supplied from the Ti source gas supply line 72 as shown in FIGS. 7B and 7D.
  • Ar gas is supplied from the supply line 74 to the gas introduction path 35 (Ti source gas supply process).
  • Ti source gas and Ar gas supplied to these gas introduction paths 35 are supplied to the wafer W through the gas flow space 32 in the same manner as the Sr source gas and Ar gas in the Sr source gas supply step described above.
  • Molecules constituting the Ti source gas are adsorbed on the surface of the wafer W. Excess Ti source gas and Ar gas are removed from the processing vessel 21 through the exhaust pipe 23.
  • Ti source gas purge step When a predetermined time has elapsed and an adsorption layer of Ti source gas is formed on the wafer W, the supply of each gas is stopped, and as shown in FIGS. 7B and 7D, the Ti source gas supply line 72 and Ar gas is supplied as a purge gas from the counter gas supply line 74 to purge the Ti source gas remaining in the processing vessel 21 and the gas supply unit 3 (Ti source gas purge step).
  • the ozone gas and the Ar gas are supplied from the ozone gas supply line 73 and the Ar gas is supplied from the gas supply line 74 to the Ar as shown in FIGS. 7 (c) and 7 (d).
  • Each gas is supplied to the gas introduction path 35 (ozone gas supply process).
  • the ozone gas and Ar gas supplied to the gas introduction path 35 are supplied to the wafer W through the gas flow space 32 in the same manner as the Sr source gas and Ar gas in the Sr source gas supply process described above.
  • the ozone gas reacts with the source gas molecules already adsorbed on the surface of the wafer W by the heat of the heater 22a of the mounting table 22 to form an STO molecular layer.
  • the cycle is repeated a predetermined number of times, for example, 100 times, and the STO molecular layer is formed into multiple layers. Then, the formation of the STO film having a predetermined film thickness is completed. Then, after the film formation is completed, the supply of various gases is stopped, and the pressure in the processing vessel 21 is returned to the state before the vacuum exhaust, and then the wafer W is unloaded by an external transfer mechanism through a path opposite to that during loading, A series of film forming operations is completed.
  • a gas is introduced, and the gas is supplied to the wafer W through the gas flow space 32 along the partition members 41 to 46 provided concentrically so that the extent of the spread becomes larger toward the outside. Therefore, the conductance (ease of gas flow) of the gas flow path until the wafer W is supplied can be increased. Therefore, in the ALD process as described above, the processing gas containing Sr source gas, Ti source gas or ozone gas can be supplied to the gas flow space 32 and then supplied to the wafer W at a high speed. Moreover, after supplying each source gas, the purge process which substitutes with Ar gas can be performed at high speed. For this reason, throughput can be improved.
  • the gas supply unit 3 does not have a structure that requires precise and complicated processing like the gas shower head described above, the gas supply unit 3 is easier to manufacture than the gas shower head.
  • a material constituting the main body 31 and the partition members 41 to 46 for example, aluminum, a mixture of SiC and aluminum, ceramics, or the like can be used.
  • the degree of freedom of the material that can be used for manufacturing the gas supply unit 3 is large.
  • by selecting a material such as aluminum that is easy to work with it is possible to easily add or delete a gas introduction port according to the number of types of gas required for the process.
  • a rod-shaped airflow control member 81 is provided inside the partition member 41.
  • the air flow control member 81 is configured to prevent gas from flowing in the central region in the radial direction of the gas flow space 32.
  • such an air flow control member 81 is provided on the center side in the radial direction in which the gas is easily supplied, so that the gas is uniformly supplied to the entire wafer W and the in-plane processing is performed. Can improve the uniformity.
  • FIG. 8B is a perspective view of the airflow control member
  • FIG. 8C is a perspective view of the periphery of the airflow control member 81 on the lower surface side of the gas supply unit 3.
  • the display is omitted for convenience of illustration, but the support members 48 and 49 extend inside the partition member 41 and support the airflow control member 81.
  • FIG. 9A shows a second modification of the gas supply unit 3.
  • a cylindrical partition member (airflow control member) 82 whose upper end is closed is provided inside the partition member 41.
  • the gas is prevented from flowing to the central region in the radial direction of the gas flow space 32, and the gas is uniformly supplied to the entire wafer W, thereby improving the in-plane processing uniformity.
  • FIG. 9B is a perspective view of the partition member 82.
  • the partition member 82 is supported by support members 48 and 49 extending radially inward of the gas flow space 32 in the same manner as the airflow control member 81, but the display is omitted in FIG. 9B for convenience of illustration. Yes.
  • the uniformity of processing within the surface of the wafer W is improved.
  • the inclination and interval of the partition members 41 to 46 and the shapes of the airflow control member 81 and the partition member 82 may be adjusted.
  • the conductance increases in the gas flow paths 51 to 57 from the radially inner side to the outer side of the main body 31.
  • the gas flow paths 51 to 57 are arranged in descending order of conductance, the flow path 57> the flow path 56> the flow path 55> the flow path 54> the flow path 53> the flow path 52> the flow path 51. It is preferable. As a result, the gas is uniformly supplied in the plane of the wafer W, and a uniform film forming process can be performed in the plane of the wafer W.
  • the conductances of the gas flow paths 51 to 57 are made larger toward the outer side in the radial direction as described above.
  • the supply of gas may be made uniform.
  • the number of partition members arranged in the gas flow space 32 may be increased or decreased to make the gas supply uniform.
  • a gas supply unit 9 as a third modification of the gas supply unit is shown in FIG.
  • a partition member 91 is provided in the gas introduction path 35 to partition the gas introduction path 35 into an inner region 92 and an outer region 93 in the radial direction.
  • a partition member 94 configured in the same manner as the partition member 41 is provided in the gas flow space 32.
  • the lower end 91 a of the partition member 91 is connected to the upstream end 94 a of the partition member 94.
  • the gas introduction ports 61 a to 63 a are configured to supply each gas to the inner region 92, and a plurality of gases for diffusing the gas supplied to the inner region 92 to the outer region 93 are formed on the side wall of the partition member 91. An opening 95 is provided. Therefore, the gas from the gas introduction ports 61 a to 63 a is first supplied to the inner region 92 and then diffused from the inner region 92 to the outer region 93 through the plurality of openings 95. Even if the gas supply unit is configured in this manner, it is not necessary to pass gas through a complicated and fine flow path unlike a gas shower head, and thus the same effect as the example of the first embodiment can be obtained.
  • the gas supply unit 100 shown in FIG. 11A is configured in the same manner as the gas supply unit 3, but the partition members 41 to 46 described above are not provided in the gas flow space 32, and instead they are replaced.
  • Plate-shaped partition members 103 to 106 are provided so as to partition the gas flow space 32 in the circumferential direction. Each partition member 103 to 106 extends in the radial direction from the center of the gas flow space 32 toward the inner peripheral surface 33 of the main body 31.
  • each partition member 103 to 106 is supported by the inner peripheral surface 33 and the other end is supported by a support member 107 provided at the center in the radial direction.
  • FIG. 11C is a perspective view of the partition members 103 to 106 and the support member 107.
  • FIG. 11A shows the gas supplied from the gas introduction ports 61a to 63a and 61b to 63b, the gas supplied from the gas introduction ports is the same as in the first embodiment. While forming a swirl that rotates in the circumferential direction of the main body portion 31, the gas flow space 32 is directed toward the enlarged diameter end 32 b. The gas is guided by the partition members 103 to 106, and the vortex is discharged toward the wafer W from the enlarged diameter end 32b.
  • FIG. 11B shows the upper surface of the wafer W when the gas is supplied in this way, and the arrows indicate the gas flow.
  • the partition members 103 to 106 are configured so that the gas that forms a vortex as described above is supplied to the wafer W from the enlarged diameter end 32b of the gas flow space 32, and thus, the entire wafer W is highly uniform. It is preferable to supply gas.
  • the partition members 103 to 106 are preferably supported in an inclined state about the horizontal axis. In this case, the angles around the horizontal axis of the partition members 103 to 106 are set as appropriate.
  • the partition members 103 to 106 are provided at the enlarged diameter end 32b of the gas flow space 32, but may be formed to extend from the enlarged diameter end 32b to the reduced diameter end 32a. Further, the number of partition members is not limited to four so that gas can be uniformly supplied to the wafer W, and is set as appropriate.
  • FIG. 12 is a cross-sectional perspective view of the present embodiment.
  • the main body 120 of the gas supply unit 110 shown in FIG. 12 has a flat circular shape.
  • a disk-shaped gas flow space 121 is formed in the main body 120 in place of the gas flow space 32 whose diameter is expanded on the lower side.
  • the partition members 41 to 46 are not provided in the gas flow space 121, and the plate-like member 111 is provided on the downstream end 121 a side of the gas flow space 121.
  • a ring-shaped slit 112 divided into four in the circumferential direction is concentrically opened in the plate member 111.
  • 13A is a bottom view of the plate-shaped member 111
  • FIG. 13B is a perspective view of the plate-shaped member 111 as viewed from the lower side of the gas supply unit 110.
  • 14 slits 112 are opened from the center of the plate-like member 111 toward the periphery.
  • the width of the two slits 112 formed on the most central side is 2 mm
  • the width of the seven slits 112 formed on the outside thereof is 3 mm
  • the width of the three slits 112 formed on the outside thereof is 4 mm.
  • the width of the two slits 112 formed on the outermost peripheral side is 5 mm.
  • the width of the slit 112 is configured to increase as it goes toward the peripheral edge of the plate-like member 111, and the opening is not formed at the center of the plate-like member 111.
  • the conductance of the gas on the peripheral side in the radial direction of the gas supply unit 110 is increased as in the modification of the first embodiment, the gas is uniformly supplied to the entire wafer W, and the in-plane processing of the wafer W is performed. Can improve the uniformity.
  • the length of the diameter L1 of the circle constituting the periphery of the slit 112 formed on the outermost side of the plate-like member 111 is, for example, 300 mm.
  • the distance L2 between the slits 112 adjacent in the circumferential direction is, for example, 7 mm.
  • FIG. 14 shows the structure of the gas introduction path 35 and its peripheral part, and in this example, Sr in four directions so that a vortex can be formed in the gas introduction path 35 as in the other embodiments.
  • a gas introduction port for introducing gas, Ti gas, and O 3 gas is provided (the figure shows a cross-sectional shape, so the ports for introducing gas are shown in only three directions).
  • the gas introduction ports 61c, 62c, and 63c are formed as introduction paths for Sr gas, Ti gas, and O 3 gas, similarly to the gas introduction ports 61a, 62a, and 63a, respectively.
  • Each gas introduction port (not shown) is provided so as to face these gas introduction ports 61c, 62c, 63c.
  • the diameter of each gas introduction port for introducing these Sr gas, Ti gas and O 3 gas is, for example, 4 mm
  • the diameter of the gas introduction port 64 for introducing Ar gas is, for example, 12 mm.
  • the height h4 from the upper surface of the main body 120 to the upper surface of the gas flow space 121 is, for example, 30 mm
  • the height of the gas flow space 121 indicated by h5 is, for example, 5 mm
  • the thickness h6 of the plate member 111 is, for example, 5 mm.
  • the distance h7 between the wafer W surface and the lower surface of the plate-like member 111 is, for example, 10 mm.
  • the gas supply unit 110 of the third embodiment it is not necessary to pass gas through a complicated and fine flow path as compared with the conventional gas shower head shown in FIG. A decrease in conductance can be suppressed. Therefore, the same effect as the first embodiment can be obtained.
  • the gas supply apparatus of the present invention is applied to a film forming apparatus.
  • a gas is supplied to a substrate, and the gas is supplied.
  • the plasma etching apparatus which makes it plasma and etches a board
  • the film forming apparatus is not limited to an apparatus that performs an ALD process in which different processing gases are intermittently supplied to a substrate in a predetermined cycle as described above, and the processing gas is continuously supplied to the wafer W and continuously.
  • the semiconductor wafer is described as an example of the substrate, but the present invention is not limited to this, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like.
  • the gas supply amount from the gas introduction ports 61a to 63a and 61b to 63b is 250 mL / min (sccm), and the supply amount from the gas introduction port 64 is 500 mL / min (sccm).
  • the C 7 H 8 gas fraction and Ar gas fraction are 27% and 72%, respectively.
  • the temperature of the wafer W and the processing space around it is set to 230 ° C., and gas is exhausted from the center of the wafer W to the radial direction at the outer periphery of the wafer W, so that the pressure in the processing space S becomes 45 Pa.
  • FIG. 15A shows the simulation result of the concentration distribution in the processing space S after 0.1 seconds after supplying the C 7 H 8 gas as described above.
  • the gas concentration distribution in the processing space S is shown in FIG. The area is indicated by isodensity lines. As shown in this figure, a substantially uniform distribution of C 7 H 8 gas is obtained.
  • the actual simulation result is output on a color screen so that the density distribution is displayed in gradation by computer graphics.
  • FIG. 15A and FIG. The concentration distribution is shown. Accordingly, the concentration distribution is not actually skipped in FIGS. 15A and 15B, and there is a steep concentration gradient between the regions divided by the isoconcentration lines in these drawings. Means.
  • FIG. 15B shows the result of the simulation by dividing the gas concentration distribution by isoconcentration lines in the same manner as in FIG. 15A, and further, for convenience of illustration, a point indicating a predetermined concentration in the processing space S is shown.
  • the C 7 H 8 gas concentration in the blackened region is 19%, and the C 7 H 8 gas concentration in the region hatched with a solid line in one direction is 13%.
  • C 7 H 8 gas concentration in the region indicated by hatching in net is 8%, C 7 H 8 gas concentration in the region marked with the point is 6%.
  • the C 7 H 8 gas concentration in the hatched region is smaller than 19% and larger than 13%.
  • the C 7 H 8 gas concentration in the region without dots or lines is smaller than 13% and larger than 8%.
  • the simulation result after 1.0 second showed a similar concentration difference. Also in the Sr source gas purge process, there was a location where the C 7 H 8 gas concentration was high in the shower head after 1.0 second had elapsed after gas supply.
  • the gas supply unit 3 of the present invention can supply gas with high uniformity to the surface of the wafer W and can quickly perform the purge as compared with the conventional gas shower head.
  • % indicates volume% concentration.
  • evaluation test 2 Similarly to the evaluation test 1, the ozone gas supply process in the gas supply unit 3 was simulated, and the concentration distribution in the ozone gas flow space 32 and the surface of the wafer W was examined. As a result, the concentration distribution in the flow space 32 and on the surface of the wafer W became substantially uniform 0.05 seconds after the gas was discharged. The speed until the concentration distribution becomes uniform is sufficient to perform the ALD process, and it is considered that the gas supply unit 3 is effective in the ALD process.
  • the Ar gas flow rate from the gas introduction port 64 was set to 500 mL / min (sccm), and a total of 500 mL / min (sccm) Ar gas was supplied from the gas introduction ports 62a and 62c. Other gas introduction ports are not set in this simulation. Then, the distribution of toluene gas in the processing space S was examined.

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KR20100127741A (ko) 2010-12-06
CN101842880A (zh) 2010-09-22
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CN102339745A (zh) 2012-02-01

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