JP6516436B2 - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 22
- 239000007789 gas Substances 0.000 claims description 296
- 238000012545 processing Methods 0.000 claims description 107
- 230000002093 peripheral effect Effects 0.000 claims description 62
- 239000012495 reaction gas Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 52
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 230000003111 delayed effect Effects 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 6
- 239000000376 reactant Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 description 27
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 229910001873 dinitrogen Inorganic materials 0.000 description 17
- 230000008569 process Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
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- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- -1 CH 3 OH Chemical class 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
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- 102200125943 rs148890852 Human genes 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LJEUEIFPFRUAJU-UHFFFAOYSA-N CC(C(C)(C)C)CCCCC.CC(C(C)(C)C)CCCCC.CC([O-])C.CC([O-])C.[Ti+2] Chemical compound CC(C(C)(C)C)CCCCC.CC(C(C)(C)C)CCCCC.CC([O-])C.CC([O-])C.[Ti+2] LJEUEIFPFRUAJU-UHFFFAOYSA-N 0.000 description 1
- AEZYJGQBWAYALH-UHFFFAOYSA-N CC(C(C)(C)C)CCCCC.CC(C(C)(C)C)CCCCC.[Sr] Chemical compound CC(C(C)(C)C)CCCCC.CC(C(C)(C)C)CCCCC.[Sr] AEZYJGQBWAYALH-UHFFFAOYSA-N 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004356 Ti Raw Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 125000006309 butyl amino group Chemical group 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45506—Turbulent flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/4554—Plasma being used non-continuously in between ALD reactions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Description
Claims (9)
- 処理容器内に設けられ、基板が載置される載置部と、
前記載置部に対向配置された天井部と、
前記載置部と前記天井部との間の処理空間に連通した反応ガス供給部と、
前記載置部の外周部を被覆し前記載置部との境界で段差を形成する環状のカバー部材と、
を備え、
前記天井部は、
その下面側に形成された凹部と、
前記凹部の外側に位置する外周部と、
を備えており、
前記載置部の外周部と前記天井部の前記外周部との間には、これらの周方向に亘って、平面視において環状に隙間が存在しており、前記反応ガス供給部から前記天井部を介して前記処理空間内に供給された反応ガスは、環状の前記隙間を介して、前記処理空間の外部に流出し、
前記隙間を与える前記天井部の前記外周部には、複数のガス流壁形成用のガス流路が設けられ、
前記カバー部材は、前記ガス流路のガス出射開口に対向し、前記ガス流路から出射されたガスが、前記カバー部材に当たるように、配置されている、
ことを特徴とする成膜装置。 - 前記ガス流壁形成用のガス流路は、
前記天井部における前記外周部の前記載置部に対向する面から、上方に向けて、前記載置部の載置表面に対して垂直な方向に延びている、
ことを特徴とする請求項1に記載の成膜装置。 - 前記ガス流壁形成用のガス流路は、
前記天井部における前記外周部の前記載置部に対向する面から、上方に向けて延びており、且つ、
上方に向かうに従って、前記天井部の中央部に近づく方向に延びている、
ことを特徴とする請求項1に記載の成膜装置。 - 前記反応ガス供給部からは、前記処理容器内に、第1及び第2の反応ガスが交互に供給され、
前記ガス流壁形成用のガス流路からは、前記隙間に、流壁ガスが、前記第1及び第2の反応ガスの供給に同期して間欠的に供給される、
ことを特徴とする請求項1〜3のいずれか一項に記載の成膜装置。 - 前記第1の反応ガスの前記処理容器内への導入開始時刻から、遅延して、前記流壁ガスの前記隙間内への供給が開始され、
前記第1の反応ガスの前記処理容器内への導入終了時刻から、遅延して、前記流壁ガスの前記隙間内への供給が終了する、
ことを特徴とする請求項4に記載の成膜装置。 - 前記隙間の最小値は、0.3mm以上10.0mm以下であることを特徴とする請求項1〜5のいずれか一項に記載の成膜装置。
- 処理容器内に設けられ、基板が載置される載置部と、
前記載置部に対向配置された天井部と、
前記載置部と前記天井部との間の処理空間に連通した反応ガス供給部と、
を備え、
前記載置部の外周部と前記天井部の外周部との間には、これらの周方向に亘って、平面視において環状に隙間が存在しており、前記反応ガス供給部から前記天井部を介して前記処理空間内に供給された反応ガスは、環状の前記隙間を介して、前記処理空間の外部に流出し、
前記隙間を与える前記天井部の前記外周部には、複数のガス流壁形成用のガス流路が設けられており、
前記ガス流壁形成用のガス流路は、
前記天井部における前記外周部の前記載置部に対向する面から、上方に向けて延びており、且つ、
前記ガス流壁形成用のガス流路のガス出射開口端上の少なくとも3点を含む平面に垂直な方向は、上方に向かうに従って、前記天井部の中央部に近づく方向に延びている、
ことを特徴とする成膜装置。 - 成膜装置を用いて行う成膜方法であって、
前記成膜装置は、
処理容器内に設けられ、基板が載置される載置部と、
前記載置部に対向配置された天井部と、
前記載置部と前記天井部との間の処理空間に連通した反応ガス供給部と、
前記載置部の外周部を被覆し前記載置部との境界で段差を形成する環状のカバー部材と、
を備え、
前記天井部は、
その下面側に形成された凹部と、
前記凹部の外側に位置する外周部と、
を備えており、
前記載置部の外周部と前記天井部の前記外周部との間には、これらの周方向に亘って、平面視において環状に隙間が存在しており、前記反応ガス供給部から前記天井部を介して前記処理空間内に供給された反応ガスは、環状の前記隙間を介して、前記処理空間の外部に流出し、
前記隙間を与える前記天井部の前記外周部には、複数のガス流壁形成用のガス流路が設けられ、
前記カバー部材は、前記ガス流路のガス出射開口に対向し、前記ガス流路から出射されたガスが、前記カバー部材に当たるように、配置されている、
ことを特徴とする成膜方法。 - 前記反応ガス供給部からは、前記処理容器内に、第1及び第2の反応ガスが交互に供給され、
前記ガス流壁形成用のガス流路からは、前記隙間に、流壁ガスが、前記第1及び第2の反応ガスの供給に同期して供給される、
ことを特徴とする請求項8に記載の成膜方法。
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JP2014217203A JP6516436B2 (ja) | 2014-10-24 | 2014-10-24 | 成膜装置及び成膜方法 |
KR1020177010774A KR101932870B1 (ko) | 2014-10-24 | 2015-09-18 | 성막 장치 및 성막 방법 |
US15/520,820 US10815567B2 (en) | 2014-10-24 | 2015-09-18 | Deposition device and deposition method |
PCT/JP2015/076781 WO2016063670A1 (ja) | 2014-10-24 | 2015-09-18 | 成膜装置及び成膜方法 |
TW104133877A TWI677592B (zh) | 2014-10-24 | 2015-10-15 | 成膜裝置及成膜方法 |
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US (1) | US10815567B2 (ja) |
JP (1) | JP6516436B2 (ja) |
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WO2018012049A1 (ja) * | 2016-07-14 | 2018-01-18 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
US11236424B2 (en) * | 2019-11-01 | 2022-02-01 | Applied Materials, Inc. | Process kit for improving edge film thickness uniformity on a substrate |
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US7699932B2 (en) * | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
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JP2009239082A (ja) * | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | ガス供給装置、処理装置及び処理方法 |
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US9695510B2 (en) * | 2011-04-21 | 2017-07-04 | Kurt J. Lesker Company | Atomic layer deposition apparatus and process |
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