WO2007130909A2 - Uv assisted thermal processing - Google Patents

Uv assisted thermal processing Download PDF

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Publication number
WO2007130909A2
WO2007130909A2 PCT/US2007/067774 US2007067774W WO2007130909A2 WO 2007130909 A2 WO2007130909 A2 WO 2007130909A2 US 2007067774 W US2007067774 W US 2007067774W WO 2007130909 A2 WO2007130909 A2 WO 2007130909A2
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
energy
substrate
assembly
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/067774
Other languages
English (en)
French (fr)
Other versions
WO2007130909B1 (en
WO2007130909A3 (en
Inventor
Joseph Michael Ranish
Yoshitaka Yokota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to DE112007001114T priority Critical patent/DE112007001114T5/de
Priority to CN2007800159694A priority patent/CN101437626B/zh
Priority to JP2009509998A priority patent/JP5269769B2/ja
Priority to KR1020087029395A priority patent/KR101046014B1/ko
Publication of WO2007130909A2 publication Critical patent/WO2007130909A2/en
Publication of WO2007130909A3 publication Critical patent/WO2007130909A3/en
Publication of WO2007130909B1 publication Critical patent/WO2007130909B1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • the present invention relates generally to a semiconductor processing tool and, more specifically, to a thermal processing tool with a UV radiation source.
  • Rapid Thermal Processing commonly referred to as 'RTP', subjects a substrate to a very brief, intense burst of heat that can go from room temperature to about 1000 0 C in seconds.
  • RTP technology is used to change the characteristics of a deposited film or crystal lattice.
  • RTP generally includes processes such as annealing, silicidation and oxidation of a substrate surface.
  • an RTP chamber includes a radiant heat source or lamp, a chamber body, and a substrate support ring.
  • the lamp is typically mounted on a top surface of the chamber body so that the energy generated by the lamp radiates upon the substrate supported by the substrate support ring with in the chamber body.
  • a quartz window is typically disposed in the top surface of the chamber body to facilitate the transfer of energy from the lamp to the substrate.
  • An external motor is usually used to rotate the support ring and the substrate to compensate for variations in the radiation energy generated by the lamp that could heat the substrate non-uniformly. Typically, a rapid thermal process is performed at a reduced pressure to get better uniformity.
  • Thermal oxidation is commonly used to grow very thin layer of oxide used as gate oxide.
  • An oxidation process performed in a state of the art RTP chamber usually include raising the temperature in the RTP chamber high enough to break oxygen or other species used to form an oxide layer and to allow enough diffusion of oxygen or other species occur on the substrate surface.
  • the temperature needed to break oxygen or other species is usually higher than the temperature needed to induce enough diffusion.
  • the higher temperature required for breaking oxygen or other species increases thermal exposure, promote unwanted diffusion inside other structures.
  • the present invention provides methods and apparatus for performing rapid thermal processing of a semiconductor substrate.
  • One embodiment of the present invention provides an apparatus for thermal processing a substrate.
  • the apparatus comprises a chamber and a UV radiation assembly disposed inside the chamber.
  • the apparatus further comprising an outside radiation assembly configured to radiate energy into the chamber through a quartz window on the chamber.
  • the apparatus comprises a chamber having a top window, a substrate support mounted inside the chamber, wherein the substrate support is configured to support the substrate with a processing surface facing the top window, a first energy assembly disposed outside the chamber, wherein the first energy assembly is configured to radiate energy through the top window, and a second energy assembly mounted inside the chamber above the substrate support.
  • Yet another embodiment of the present invention provides a method for thermal processing a substrate.
  • the method comprises positioning the substrate in a chamber, applying a first energy source to supply heat to the chamber, and applying a second energy source to generate active species in the chamber.
  • Figure 1 illustrates a sectional perspective view of a thermal processing chamber in accordance with one embodiment of the present invention.
  • Figure 2 illustrates a perspective view of a UV (ultra violet) assembly in accordance with one embodiment of the present invention.
  • Figure 3 illustrates a sectional view of a thermal processing chamber in accordance with one embodiment of the present invention.
  • Figure 4 illustrates a sectional view of the thermal processing chamber of Figure 3.
  • Figure 5 illustrates a perspective view of a UV assembly in accordance with one embodiment of the present invention.
  • Figure 6 illustrates a sectional view of an exemplary reflector used in the UV assembly of Figure 5.
  • Figure 7 illustrates a sectional view of a thermal processing chamber having a UV assembly of Figure 5.
  • Thermal processing chambers of the present invention comprise two different radiation energy sources, such as an infrared radiation source and a UV radiation source.
  • the UV radiation source and the infrared radiation source may be used alone or in combination to supply heat, activate electronic, or create active species inside the thermal processing chamber.
  • a plurality of processes, such as rapid thermal processing, annealing, and oxidation, may be performed in the thermal processing chamber with improved results.
  • the combined use of infrared and UV radiation enables surface selective reactions which is not possible by using either radiation alone.
  • FIG. 1 illustrates a sectional perspective view of a thermal processing chamber 100 in accordance with one embodiment of the present invention.
  • the thermal processing chamber 100 generally comprises a lamp assembly 1 10, and a chamber 130 having a UV assembly 120 disposed therein.
  • the chamber 130 is a vacuum chamber.
  • the chamber 130 may be an atmospheric chamber.
  • the lamp assembly 110 is positioned above the chamber 130 and configured to supply heat to the chamber 130 via a quartz window 114 of the chamber 130.
  • the lamp assembly 110 is configured to house a heating source, such as a plurality of tungsten-halogen lamps configured to provide a tailored infrared heating means to a substrate 101 disposed in the chamber 130.
  • the UV assembly 120 is configured to provide a UV source to the chamber 130, for example to generate active species for reaction on the surface of the substrate 101 in the chamber 130.
  • the lamp assembly 110 generally comprises a radiant energy pipe assembly 112 having a plurality of light pipes 111.
  • the light pipes 111 may be made of stainless steel, brass, aluminum or other metal.
  • Each of the light pipes 111 is configured to house a radiant energy source, for example a tungsten-halogen lamp.
  • the ends of the light pipes 1 11 are brazed or welded to openings in an upper cooling wall 116 and a lower cooling wall 117.
  • a cylindrical wall 118 is brazed or welded to the peripheral edge of the upper cooling wall 116 and the lower cooling wall 117.
  • the light pipes 111 may be disposed in a hexagonal arrangement. Coolant may be circulated to the lamp assembly 1 10 through an inlet 109 to cool the light pipes 111 and to keep to walls 116, 117 and 1 18 cool during process.
  • the chamber 130 generally comprises a circular sidewall 140 defining a chamber volume 139 with the quartz window 114 and a bottom wall (not shown).
  • the sidewall 140 may have an inlet 131 and an outlet (not shown) configured to connect the chamber volume 139 with a gas source and a pump.
  • a silt valve may be adapted to an opening 137 on the sidewall 140 for a robot to drop/retrieve the substrate 101 on/from a substrate support 138 positioned in the chamber volume 139.
  • the substrate support 138 may be configured to move vertically and to rotate about a central axis.
  • the UV assembly 120 is generally disposed on an upper portion of the chamber volume 139.
  • the UV assembly 120 may take form of a module which may be "plugged in” to the chamber 130. Different designs of UV assemblies may be exchangeably plugged into the chamber 130 to suit different design recipes.
  • Figure 2 illustrates a perspective view of the UV assembly 120 used in the thermal processing chamber 100 of Figure 1.
  • the UV assembly 120 generally comprises a top 124, a bottom 125 and sidewalls 121 , which defines a UV volume 129 therein.
  • An opening 126b on the bottom 125 is configured to connect the UV volume 129 with the chamber volume 139 of the chamber 130 shown in Figure 1.
  • An opening 126a on the top 124 exposes the UV volume 129 to the quartz window 114 of Figure 114, hence providing a passage for the radiation energy from the lamp assembly 110 to the chamber volume 139 during process.
  • the UV assembly 120 further comprises a plurality of quartz tubes 123 with both ends extending out of opposing sidewalls 121 of the UV assembly 120. On each end of the quartz tubes 123, a removable cap 127 may be used for sealing. Each of the quartz tubes 123 is configured to house a UV lamp 122 (shown in Figure 1 ) therein.
  • the UV lamps 122 may include sealed plasma bulbs filled with one or more gases such as xenon (Xe) or mercury (Hg) for excitation by a power source.
  • the power source may be a conventional UV power source or one or more transformers to include energize filaments of the magnetrons.
  • the power source can introduce radio frequency (RF) energy sources that are capable of excitation of the gases within the UV lamp bulbs.
  • the UV lamp bulb may have low pressure Hg or other low pressure UV producing discharges to produce radiation of 254nm and 185nm.
  • the UV lamp 122 may be positioned in one of the quartz tubes 123 such that electrodes of UV lamps 122 protrude outside the UV volume 129, or at least are sheltered by the top 124 from the radiation energy of the lamp assembly 110 to keep the electrodes from overheating and to control the pressure in the UV lamp 122.
  • FIG. 3 illustrates a sectional view of a thermal processing chamber 200 in accordance with one embodiment of the present invention.
  • Figure 4 illustrates a sectional view of the thermal processing chamber 200 of Figure 3 along 4-4.
  • the thermal processing chamber 200 generally comprises a lamp assembly 210, and a chamber 230 having a UV assembly 220 disposed therein.
  • the lamp assembly 210 is positioned above the chamber 230 and configured to supply heat to the chamber 230 via a quartz window 214 of the chamber 230.
  • the lamp assembly 210 is configured to house a heating source, such as a plurality of tungsten-halogen lamps configured to provide a tailored infrared heating means to a substrate 201 disposed in the chamber 230.
  • the UV unit is configured to provide a UV source to the chamber 230, for example to generate active species for reaction on the surface of the substrate 201 in the chamber 230.
  • the lamp assembly 210 generally comprises a plurality of light pipes 211.
  • the light pipes 211 may be made of stainless steel, brass, aluminum or other metal.
  • Each of the light pipes 211 is configured to house a radiant energy source 208, for example a tungsten-halogen lamp to provide heat to the chamber volume 239 in form of infrared radiation.
  • the ends of the light pipes 211 are brazed or welded to openings in an upper cooling wall 216 and a lower cooling wall 217.
  • a cylindrical wall 218 is brazed or welded to the peripheral edge of the upper cooling wall 216 and the lower cooling wall 217.
  • the light pipes 21 1 may be disposed in a hexagonal arrangement.
  • Coolant may be circulated to the lamp assembly 210 through an inlet 209 to keep to walls cool during process.
  • Each of the radiant energy source 208 may be connected to a controller 207 which may control the energy level of each radiant energy source 208 to achieve a uniform or tailored heating profile to the chamber volume 239.
  • the radiant energy sources 208 may be grouped in a plurality of radial bands. In another embodiment, the radiant energy sources 208 may be controlled individually.
  • the chamber 230 generally comprises a circular sidewall 240 defining a chamber volume 239 with the quartz window 214 and a bottom wall (not shown).
  • the sidewall 240 may have an inlet 231 adapted to a gas source 235 configured to provide one or more gases to the chamber volume 239.
  • a silt valve (not shown) may be adapted to an opening 237 (shown in Figure 4) on the sidewall 240 for a robot to drop/retrieve the substrate 201 on/from a substrate support 238 positioned in the chamber volume 239.
  • the substrate support 238 may be configured to move vertically and to rotate about a central axis.
  • the UV assembly 220 is generally disposed on an upper portion of the chamber volume 239.
  • the UV assembly 220 may take the form of a module which may be "plugged in” to the chamber 230.
  • the UV assembly 220 may be similar to the UV assembly of Figure 2.
  • a plurality of quartz tubes 223 may be disposed in a parallel manner with both ends extending out of opposing sidewalls
  • the UV assembly 220 may include about 15 quartz tubes 223 evenly distributed on a horizontal plane.
  • a UV lamp 222 may be disposed in each of the quartz tubes 223 to provide a desired UV resource.
  • each quartz tube 223 protrudes out of the sidewalls 221.
  • the UV lamp 222 inside each quart tube 223 is placed such that two electrodes 241 of the UV lamp 222 are outside the chamber volume 239.
  • the electrodes 241 are adapted to a power supply 206 configured to provide an energy source to each of the UV lamps 222 independently.
  • Caps 227 may be used to close the quartz tubes 223. Seals 242 may be used near the interface of each quartz tube 223 and the sidewall 221 to seal the chamber volume 239.
  • the UV assembly 220 and the lamp assembly 210 may be used alone or in combination to supply heat, activate surface sites, or create active species inside the chamber 230.
  • a plurality of processes, such as rapid thermal processing, annealing, and oxidation, may be performed in the thermal processing chamber 200.
  • the lamp assembly 210 may be used to provide heat in form of infrared radiation to the substrate 201 disposed in the chamber volume 239.
  • the lamp assembly 210 may be adjusted to rapidly heat the substrate 201 uniformly to a temperature that enables diffusion of oxygen through the silicon dioxide product layer in the substrate 201.
  • the UV assembly 220 may be used to provide UV radiation generate active species from precursors supplied to the chamber volume 239 through the inlet 231.
  • the quartz tubes 223 may absorb some radiation energy from the lamp assembly 210. In one embodiment, the quartz tubes 223 may have rectangular cross sections to minimize the disturbance to the radiant energy profile from the lamp assembly 210.
  • the UV radiation from the UV assembly 220 may be used to irradiate precursor that is capable of generating desired active species for treating a film on the substrate.
  • the precursors may comprises or consist of nitrogen, oxygen, or fluorine.
  • other active species and precursors may be used.
  • the UV radiation source may be tailored to generate different active species. In one embodiment, tailoring the UV radiation source may be achieved by adjusting the gas pressure inside a UV lamp bulb to emit UV radiation of different wavelength.
  • UV radiation may be used to create highly reactive oxidant species near a reactive surface from oxygen (O2), ozone (O3), nitrous oxide
  • N2O carbon monoxide
  • CO2 carbon dioxide
  • H2O water
  • UV radiation may be used to create highly reactive nitridation species near a reactive surface from ammonia (NH3), nitrogen gas (N2), hydrazines, amines, or combinations thereof in a thermal processing chamber having an infrared radiation source to heat the reactive surface, such as the thermal processing chamber 200 of Figure 3.
  • NH3 ammonia
  • N2 nitrogen gas
  • hydrazines amines
  • amines or combinations thereof in a thermal processing chamber having an infrared radiation source to heat the reactive surface, such as the thermal processing chamber 200 of Figure 3.
  • UV radiation may be used to create highly reactive oxidation/nitridation species near a reactive surface from nitrous oxide or nitric oxide in a thermal processing chamber having an infrared radiation source to heat the reactive surface, such as the thermal processing chamber 200 of Figure 3.
  • UV radiation may be used to create highly reactive fluorinate species near a reactive surface from NF ⁇ , F2, CF4, SF5, C2F5,
  • the quartz tubes 223 may be replaced by tubes made from fluorinate resistive materials.
  • the independent controls of the UV radiation source and infrared radiation source enhance uniformity of process results. More particularly, the infrared radiation source, such as the lamp assembly 210 of Figure 3, enables rapid flexible substrate temperature control by tailored infrared radiation distribution, while the UV radiation source, such as the UV assembly 220 of Figure 3, enables the independent tailored UV distribution for active species and active site generation.
  • the configuration of positioning UV radiation source within the infrared radiation region enables better optimization of the uniformity of both radiation types on the substrate processing surface and in the gas phase in the chamber.
  • this configuration creates active species in the vicinity of the substrate surface enabling creation of very active species close to the location of use and minimizing the loss by recombination or other undesired reactions.
  • this configuration also has advantages in retarding loss of volatile materials from the substrate surface because this configuration enables creation of active species at higher pressure than state of the art method, such as using plasmas.
  • the loss of volatile materials from the substrate surface is generally undesirable since it leads to loss of desired surface features, to condensate fouling of optical surfaces, and to particle generations.
  • Higher pressures are often useful in retarding loss of volatile materials from the substrate surface.
  • in the state of art methods from creating active species, such as plasmas generally require low total gas pressures to permit the escape of the active species outside the ionized region of the plasma while keeping the substrate outside the ionized region.
  • High density plasmas often have contamination issues traceable to material exposure to very high temperature which is often the case for high thermal processing.
  • UV radiation to irradiate both the substrate surface and the gas phase may lead to enhanced kinetics from simultaneous creation of activated sites and activated species.
  • FIG. 5 illustrates a perspective view of a UV assembly 320 in accordance with another embodiment of the present invention.
  • the UV assembly 320 may be used to provide UV radiation to a thermal processing chamber, such as the thermal processing chamber 100 of Figure 1 and 200 of Figure 3.
  • the UV assembly 320 generally comprises a plurality of sidewalls 321 joint by a plurality of joints 324 to form a polygon.
  • the polygon is a square, as shown in Figure 5.
  • a UV lamp 322 enclosed in a quartz tube 323 is generally disposed inside each of the plurality of sidewalls 321.
  • Each of the UV lamps 322 and the quartz tubes 323 extend into two neighboring joints 324 wherein electrodes of the UV lamps 322 may be shielded from any radiation inside the chamber the UV assembly 320 resides. This configuration directs the UV radiation energy more towards the gas phase and less towards the substrate surface.
  • Single ended UV lamps, such as XERADEX® lamp may be used in this configuration.
  • a plurality of reflectors 327 is generally positioned along each of the plurality of sidewalls 321 to reflect UV radiation from the corresponding UV lamp 322 in a desired way.
  • the reflectors 327 generally have a designed sectional shape to achieve a desirable function.
  • the sectional shape of each of the reflectors 327 is a parabolic curve.
  • the center of the corresponding UV lamp 322 is disposed at a focus 328 of the parabolic curve.
  • the sectional shape of the reflectors 327 may also be elliptical or other types.
  • the reflectors 327 may have a reflecting surface made from metal, such as aluminum or silver, or from a stack of dielectric films that effectively reflects UV radiation.
  • the use of reflectors 327 may be used to minimize UV exposure on the surface of the substrate being processed.
  • the reflectors 327 may also be used as microwave cavities for UV lamps powered by microwave power source.
  • FIG. 7 illustrates a sectional view of a thermal processing chamber 300 having the UV assembly 320 of Figure 5.
  • the thermal processing chamber 300 is similar to the thermal processing chamber 200 of Figure 3 except the UV assembly 220 is replaced by the UV assembly 320.
  • the UV lamps 322 are outside -the radiation region of the lamp assembly 210. This configuration minimizes the UV radiation on the substrate 201 and the energy absorption of by the quartz tubes 323 during process.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/US2007/067774 2006-05-01 2007-04-30 Uv assisted thermal processing Ceased WO2007130909A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112007001114T DE112007001114T5 (de) 2006-05-01 2007-04-30 UV-unterstützte thermische Bearbeitung
CN2007800159694A CN101437626B (zh) 2006-05-01 2007-04-30 Uv辅助热处理
JP2009509998A JP5269769B2 (ja) 2006-05-01 2007-04-30 Ｕｖ支援熱処理
KR1020087029395A KR101046014B1 (ko) 2006-05-01 2007-04-30 Ｕｖ 보조 열 처리 장치 및 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/414,869 2006-05-01
US11/414,869 US7547633B2 (en) 2006-05-01 2006-05-01 UV assisted thermal processing

Publications (3)

Publication Number Publication Date
WO2007130909A2 true WO2007130909A2 (en) 2007-11-15
WO2007130909A3 WO2007130909A3 (en) 2008-06-12
WO2007130909B1 WO2007130909B1 (en) 2008-08-07

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PCT/US2007/067774 Ceased WO2007130909A2 (en) 2006-05-01 2007-04-30 Uv assisted thermal processing

Country Status (7)

Country Link
US (1) US7547633B2 (enExample)
JP (1) JP5269769B2 (enExample)
KR (1) KR101046014B1 (enExample)
CN (1) CN101437626B (enExample)
DE (1) DE112007001114T5 (enExample)
TW (1) TWI374506B (enExample)
WO (1) WO2007130909A2 (enExample)

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WO2007130909B1 (en) 2008-08-07
TWI374506B (en) 2012-10-11
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US7547633B2 (en) 2009-06-16
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DE112007001114T5 (de) 2009-04-09
KR101046014B1 (ko) 2011-07-01

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