JP2009535858A - Uv支援熱処理 - Google Patents
Uv支援熱処理 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
【選択図】 図3
Description
[0001]本発明は、一般的に、半導体処理ツールに係り、より特定すると、UV放射線源を伴う熱処理ツールに関する。
[0002]通常「RTP」と称される急速熱処理においては、基板が極短時間高強度熱バーストに曝され、これは、室温から数秒で約1000℃まで上昇するものである。このようなRTP技法は、堆積膜又は結晶格子の特性を変えるのに使用される。RTPは、一般的に、基板表面のアニール、シリコン化及び酸化のような処理を含む。
Claims (22)
- 基板を熱処理するための装置において、
チャンバと、
上記チャンバの内側に配設されたUV放射線アセンブリと、
を備えた装置。 - 上記チャンバの石英ウインドウを通して上記チャンバ内へエネルギーを放射するように構成された外側放射線アセンブリを更に備えた、請求項1に記載の装置。
- 上記外側放射線アセンブリは、六角形配置において配列された複数の赤外放射線源を備えた、請求項2に記載の装置。
- 上記UV放射線アセンブリは、複数のUVランプを備えた、請求項1に記載の装置。
- 上記複数のUVランプの各々は、石英パイプにおいて包囲されている、請求項4に記載の装置。
- 上記複数のUVランプは、互いに平行であって、上記基板の処理表面の上方に均等に分散されている、請求項4に記載の装置。
- 上記複数のUVランプの電極は、上記チャンバの外側に配設されている、請求項4に記載の装置。
- 上記複数のUVランプは、上記基板の処理表面を取り囲む多角形に沿って配置されている、請求項4に記載の装置。
- 上記UV放射線アセンブリは、更に、複数のリフレクタを備え、上記複数のリフレクタの各々は、対応するUVランプからのUV放射線を上記基板と実質的に平行に反射するように構成されている、請求項8に記載の装置。
- 上記複数のリフレクタは、放物線断面を有し、上記対応するUVランプが上記放物線断面の焦点に配置されている、請求項9に記載の装置。
- 基板を熱処理するための装置において、
上部ウインドウを有するチャンバと、
上記チャンバの内側に取り付けられ、処理表面が上記上部ウインドウに面するようにして上記基板を支持するように構成された基板支持体と、
上記チャンバの外側に配設され、上記上部ウインドウを通してエネルギーを放射するように構成された第1のエネルギーアセンブリと、
上記チャンバの内側で上記基板支持体の上方に取り付けられた第2のエネルギーアセンブリと、
を備えた装置。 - 上記第2のエネルギーアセンブリは、紫外線エネルギーを与えるように構成された、請求項11に記載の装置。
- 上記第2のエネルギーアセンブリは、互いに平行に配列された複数のUVランプを備えた、請求項12に記載の装置。
- 上記複数のUVランプの各々は、個々に制御可能である、請求項13に記載の装置。
- 上記第2のエネルギーアセンブリは、上記基板の処理表面を取り囲む多角形に配列された複数のUVランプを備えた、請求項12に記載の装置。
- 上記第2のエネルギーアセンブリは、更に、複数のリフレクタを備え、上記複数のリフレクタの各々は、対応するUVランプからのUV放射線を上記基板の処理表面と実質的に平行に反射するように構成された、請求項15に記載の装置。
- 上記第1のエネルギーアセンブリは、六角形配置を有する複数のランプを備えた、請求項11に記載の装置。
- 上記第1のエネルギーアセンブリは、赤外線エネルギーを与えるように構成され、上記第2のエネルギーアセンブリは、上記チャンバへUVエネルギーを与えるように構成される、請求項11に記載の装置。
- 基板を熱処理するための方法において、
チャンバに基板を配置するステップと、
上記チャンバへ熱を供給するように第1のエネルギー源を適用するステップと、
上記チャンバに活性種を生成するように第2のエネルギー源を適用するステップと、
を備えた方法。 - 上記第1のエネルギー源は、複数の加熱ランプを備え、上記第2のエネルギー源は、複数のUVランプを備えた、請求項19に記載の方法。
- 上記チャンバの石英ウインドウの外側に上記第1のエネルギー源を配置するステップと、
上記チャンバの内側に上記第2のエネルギー源を配置するステップと、
を更に備えた、請求項20に記載の方法。 - 上記第2のエネルギー源を適用するステップは、活性種生成のため放射線分布を調整する段階を含む、請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/414,869 US7547633B2 (en) | 2006-05-01 | 2006-05-01 | UV assisted thermal processing |
US11/414,869 | 2006-05-01 | ||
PCT/US2007/067774 WO2007130909A2 (en) | 2006-05-01 | 2007-04-30 | Uv assisted thermal processing |
Publications (3)
Publication Number | Publication Date |
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JP2009535858A true JP2009535858A (ja) | 2009-10-01 |
JP2009535858A5 JP2009535858A5 (ja) | 2010-06-24 |
JP5269769B2 JP5269769B2 (ja) | 2013-08-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009509998A Expired - Fee Related JP5269769B2 (ja) | 2006-05-01 | 2007-04-30 | Uv支援熱処理 |
Country Status (7)
Country | Link |
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US (1) | US7547633B2 (ja) |
JP (1) | JP5269769B2 (ja) |
KR (1) | KR101046014B1 (ja) |
CN (1) | CN101437626B (ja) |
DE (1) | DE112007001114T5 (ja) |
TW (1) | TWI374506B (ja) |
WO (1) | WO2007130909A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014033148A (ja) * | 2012-08-06 | 2014-02-20 | Ulvac Japan Ltd | 光照射装置 |
JP2016039192A (ja) * | 2014-08-06 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
JP2018148112A (ja) * | 2017-03-08 | 2018-09-20 | 財団法人國家實驗研究院 | 紫外線照射によってケイ素系の表面天然酸化物品質を向上できる装置と方法 |
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WO2007130909A3 (en) | 2008-06-12 |
TWI374506B (en) | 2012-10-11 |
CN101437626A (zh) | 2009-05-20 |
WO2007130909B1 (en) | 2008-08-07 |
DE112007001114T5 (de) | 2009-04-09 |
TW200802615A (en) | 2008-01-01 |
KR20090012348A (ko) | 2009-02-03 |
JP5269769B2 (ja) | 2013-08-21 |
US7547633B2 (en) | 2009-06-16 |
KR101046014B1 (ko) | 2011-07-01 |
US20080067416A1 (en) | 2008-03-20 |
WO2007130909A2 (en) | 2007-11-15 |
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