WO2007114244A1 - 有機エレクトロルミネッセンス素子、照明装置及びディスプレイ装置 - Google Patents
有機エレクトロルミネッセンス素子、照明装置及びディスプレイ装置 Download PDFInfo
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Definitions
- the present invention relates to an organic electoluminescence element, a lighting device, and a display device.
- ELD electoric luminescence display
- inorganic electoluminescence devices and organic electroluminescence devices (hereinafter also referred to as organic EL devices).
- organic EL devices Inorganic eletroluminescence elements have been used as planar light sources, but in order to drive the light emitting elements, an alternating high voltage is required.
- an organic EL element has a configuration in which a light emitting layer containing a compound that emits light is sandwiched between a cathode and an anode.
- excitons Is an element that emits light by utilizing the emission of light (fluorescence / phosphorescence) when the exciton is deactivated, and can emit light at a voltage of several volts to several tens of volts. Since it is a self-emitting type, it has a wide viewing angle, and since it is a thin-film type completely solid element with high visibility, it is attracting attention from the viewpoints of space saving and portability.
- Patent No. 309379 6 discloses a technique for doping a stilbene derivative, a distyrylarylene derivative or a tristyrylarylene derivative with a trace amount of a phosphor to improve emission luminance and extend the lifetime of the device.
- — 264692 discloses a device having an organic light-emitting layer in which 8-hydroxyquinoline aluminum complex is a host compound and doped with a small amount of phosphor.
- JP-A-3-255190 discloses An element having an organic light-emitting layer in which an 8-hydroxyquinoline aluminum complex is used as a host compound and doped with a quinacridone dye is known.
- the organic EL element is an all-solid element composed of an organic material film having a thickness of only about 0.1 ⁇ m between the electrodes, and its emission is relatively 2V to 20V. Because it can be achieved at a low voltage, it is a promising technology for next-generation flat displays and lighting.
- organic EL elements are based on a light-emitting phenomenon utilizing the deactivation of organic materials from the excited state to the ground state, blue, blue-green, etc.
- a high voltage is required to excite the large gap.
- the excited state itself is located at a high level, the lifetime tends to be shorter than that of green or red light emission, which is greatly damaged when returning to the ground state, and in particular, light emission from the triplet excited state. This tendency becomes remarkable in phosphorescence emission using the.
- a method in which the polymerization reaction is performed by irradiation with ultraviolet rays or heat at the time of forming the organic layer before laminating the cathode see, for example, Patent Document 2
- a material having a bull group at the terminal of the phosphorescent dopant e.g., a production method in which AIBN (azoisobutyl thiol-tolyl) as a radical generator is added to a mixture of comonomers having a vinyl group to cause a polymerization reaction during film formation (see, for example, Patent Document 3), in the same layer.
- a method for producing a Diels-Alder reaction between the two molecules to crosslink see, for example, Patent Document 4).
- the above-described technique is a method of completing the polymerization reaction at the time of film formation or immediately after film formation (before attaching the cathode), but also has a practical viewpoint power of improving the durability of the organic EL element. However, this is insufficient, and there is a need for further technology for improving the durability of elements.
- Patent Document 1 Japanese Patent Laid-Open No. 5-271166
- Patent Document 2 Japanese Patent Laid-Open No. 2001-297882
- Patent Document 3 Japanese Patent Laid-Open No. 2003-73666
- Patent Document 4 Japanese Unexamined Patent Publication No. 2003-86371
- the present invention has been made in view of the above problems, and its purpose is
- An object of the present invention is to provide an organic EL element, a lighting device, and a display device that exhibit high luminous efficiency and have a long lifetime.
- the organic layer is characterized in that the concentration of the reactive organic compound in the organic layer is decreased with respect to the concentration before energization due to energization with a current density of 01 mAZcm 2 to 10,000 mAZcm 2. Electroreminescence element.
- the reactive organic compound has a plurality of reactive substituents.
- the organic electoluminescence device according to any one of 1 to 3,
- the concentration of the reactive organic compound in the organic layer is reduced with respect to the concentration before energization when the emission luminance is reduced to 90% of the initial luminance by the energization.
- the concentration (M90) force of the reactive organic compound is 0.1 molZm 3 to 10 molZm 3.
- the glass transition point Tg (90%) of the organic layer at the time when the emission luminance decreases to 90% of the initial luminance and the glass transition point Tg (initial) before the start of energization are expressed by the following formula (1)
- the glass transition point Tg (50%) of the organic layer at the time when the emission luminance is reduced to 50% of the initial luminance and the glass transition point Tg (initial) before the start of energization are expressed by the following equation (2)
- An illuminating device comprising the organic electoluminescence device according to any one of 1 to 13 above.
- a display device comprising the organic electoluminescence device according to any one of 1 to 13.
- an organic EL element and a lighting device exhibiting high luminous efficiency and having a long lifetime And a display device could be provided.
- FIG. 1 shows a schematic configuration diagram of an organic EL full-color display device.
- the organic electoluminescence device (also referred to as an organic EL device) of the present invention has the configuration described in any one of claims 1 to 7 of the claims.
- an organic electroluminescence device (organic EL device) having a high external quantum efficiency and a long device lifetime (improved robustness) was obtained.
- the present invention succeeded in obtaining a high-luminance display device and lighting device equipped with the organic EL element.
- the organic EL device of the present invention has at least one organic layer containing a reactive organic compound, and the device may have other organic layers as constituent layers. Although the details of the fabrication will be described later, it may be fabricated by a conventionally known coating method or a method such as a vapor deposition method. Be formed.
- the present inventors have examined the coating process in which curing and coating are repeated! (Also referred to as in the film) consciously reactive organic compounds (both unreacted monomers, compounds having reactive groups, etc.) are left (if any remain), and a device is prepared and said compound We investigated the relationship between the residual and device performance.
- the reactive organic compound is an unreacted polymerizable monomer or the like
- the polymerization reaction is advanced by an active radical or the like generated during use of the device, and the network polymer by the organic molecule is used.
- Tg glass transition point
- the emission wavelength of the organic EL device can be changed, deterioration of a specific wavelength can be suppressed, etc. It was also possible to become possible.
- the reactive organic compound according to the present invention all of the functional compounds included in the constituent layers of the organic EL device (described in detail later) serve as the core of the reactive compound.
- a compound can be used.
- the reactive substituent preferably includes, for example, the partial structure shown below.
- the lower layer is preferably not dissolved in the upper layer coating solution by degreasing the lower layer and degrading the solvent solubility.
- An upper layer can be applied.
- the lower layer is completely resorbed, and the reactive organic compound is left in the lower layer as in the present invention, thereby significantly improving the function of the device as described above. It is an unexpected discovery, and it is preferable not only to have a functional effect on the device, but also to have a reactive compound remaining, so that the device manufacturing process can be compared to the conventional manufacturing process. It has also been found that there is a process advantage that can be simplified.
- the reactive organic compound in the organic layer is activated by the start of energization of the organic EL element of the present invention.
- “reducing the concentration of the reactive organic compound” means that a reaction (such as a crosslinking reaction or a polymerization reaction) is caused by energizing the device. It represents that the concentration of the reactive organic compound is lowered by proceeding.
- the concentration decrease due to energization is analyzed by performing analysis in the depth direction of the organic layer containing the reactive organic compound. I can do it.
- the distribution of double bonds is measured, but there are several means for measuring the distribution of double bonds.
- microscopic infrared spectroscopic analysis, Raman spectroscopic analysis, or double bonds are labeled with a labeling reagent that reacts specifically with double bonds and has specific elements, and is used for electron probe microanalyzer, X-ray photoelectron spectroscopy.
- preferable analytical means include a method of measuring the distribution of the labeling element with an apparatus, an Auger electron spectrometer, a time-of-flight secondary ion mass spectrometer, and the like.
- the reactive organic compound that can be used as the host compound is represented by the following general formula (1).
- B represents the reactive substituent
- A represents a partial structure having a function as a host compound.
- the A preferably has a partial structure represented by the following general formula (la) or general formula (lb). Furthermore, as the partial structure represented by the general formula (la), a partial structure represented by the following general formula (lc) is preferably used.
- Arl, Ar2, and Ar3 each represent an aromatic hydrocarbon ring or an aromatic heterocycle
- X represents NR ', 0, S, same' or 30 ⁇ , '.
- R ′ and R ′′ each represent a hydrogen atom or a substituent.
- the aromatic hydrocarbon rings represented by Arl, Ar2, and Ar3 are benzene ring, biphenyl ring, and naphthalene ring, respectively.
- These rings may further have a substituent represented by R ′ and R ′′ described later.
- examples of the aromatic heterocycle represented by Arl, Ar2, and Ar3 include a furan ring, a dibenzofuran ring, a thiophene ring, Oki Sazole ring, pyrrole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, triazine ring, benzimidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, indazole ring, benzimidazole ring , Benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, cinnoline ring, quinoline ring, isoquinoline ring, phthalazine ring, naphthy
- each of the substituents represented by R, R ′′ represents an alkyl group (for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert butyl group, a pentyl group, Hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, etc.), cycloalkyl group (eg, cyclopentyl group, cyclohexyl group, etc.), alkenyl group (eg, vinyl group, aryl) Group, 1 probe group, 2 buturel group, 1, 3 butadiene gel group, 2-pentyl group, isoprobel group, etc.), alkyl group (eg, etulyl group, propargyl group, etc.) , Aromatic hydrocarbon group (also called aromatic carbocyclic group,
- arylsulfol group or heteroarylsulfol group eg, phenylsulfol group, naphthylsulfonyl group, 2-pyridylsulfonyl group, etc.
- amino group eg, amino group, ethylamino group
- halogen atom eg, fluorine atom, chlorine atom, bromine atom
- fluorocarbon group eg, fluoromethyl group, trifluoromethyl group, pentafluoroethyl
- pentafluorophenyl group cyano group, nitro group, hydroxy group, mercapto group, silyl
- substituents may be further substituted with the above substituents.
- a plurality of these substituents may be bonded to each other to form a ring.
- the constituent layers of the organic EL device of the present invention will be described.
- preferred specific examples of the layer structure of the organic EL element are shown below. The present invention is not limited to these.
- the maximum emission wavelength of the blue light emitting layer is 430 ⁇ !
- the green light emitting layer that is preferred at ⁇ 480 nm has a maximum emission wavelength of 510 nm to 550 nm, and the red emission layer has a maximum emission wavelength of 600 ⁇ !
- a monochromatic light emitting layer in the range of ⁇ 640 nm is preferred, and a display device using these is preferred.
- a white light emitting layer may be formed by laminating at least three of these light emitting layers.
- a non-light emitting intermediate layer may be provided between the light emitting layers. It is preferable that the organic EL element of the present invention is a lighting device using these, which is preferably a white light emitting layer.
- the light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from an electrode, an electron transport layer, or a hole transport layer, and the light emitting portion is within the layer of the light emitting layer. It may be the interface between the light emitting layer and the adjacent layer.
- the total thickness of the light emitting layer is not particularly limited, but it can prevent the film from being homogenous, applying an unnecessary high voltage during light emission, and improving the stability of the emitted color with respect to the drive current. From the viewpoint, it is preferable to adjust to a range of 2 ⁇ to 5 / ⁇ ⁇ , more preferably to a range of 2 nm to 200 nm, and particularly preferably ⁇ ! It is in the range of ⁇ 20nm.
- a light emitting dopant or a host compound described later is formed by a known thin film method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method. Can be formed.
- the light-emitting layer of the organic EL device of the present invention may contain a light-emitting host compound and at least one light-emitting dopant (such as a phosphorescent dopant (also referred to as a phosphorescent dopant) or a fluorescent dopant). preferable.
- a light-emitting host compound such as a phosphorescent dopant (also referred to as a phosphorescent dopant) or a fluorescent dopant.
- a phosphorescent dopant also referred to as a phosphorescent dopant
- a fluorescent dopant a fluorescent dopant
- the host compound used in the present invention will be described.
- the host compound is a compound having a mass ratio of 20% or more in the compound contained in the light emitting layer and phosphorescence at room temperature (25 ° C).
- Luminescence phosphorescence is defined as a compound with a quantum yield of less than 0.1.
- the phosphorescence quantum yield is less than 0.01.
- the mass ratio in the layer is preferably 20% or more.
- host compound known host compounds may be used singly or in combination. By using a plurality of types of host compounds, it is possible to adjust the movement of electric charges, and the organic EL device can be made highly efficient. In addition, by using a plurality of kinds of light emitting dopants described later, it becomes possible to mix different light emission, thereby obtaining any light emission color.
- the light emitting host used in the present invention is a low molecular weight compound having a polymerizable group such as a bur group or an epoxy group, which may be a conventionally known low molecular compound or a high molecular compound having a repeating unit.
- a compound (evaporation polymerizable light-emitting host) is also acceptable.
- Known host compounds that may be used in combination have a hole transporting ability and an electron transporting ability, prevent the emission of longer wavelengths, and have a high Tg (glass transition temperature). Compounds are preferred.
- the light-emitting dopant according to the present invention will be described.
- a fluorescent dopant also referred to as a fluorescent compound
- a phosphorescent dopant also referred to as a phosphorescent emitter, a phosphorescent compound, a phosphorescent compound, or the like
- the viewpoint of obtaining an organic EL element with higher luminous efficiency is the light emitting dopant used in the light emitting layer or light emitting unit of the organic EL element of the present invention (sometimes simply referred to as a light emitting material).
- the phosphorescent dopant according to the present invention will be described.
- the phosphorescent dopant according to the present invention is a compound in which emission of excited triplet force is observed, specifically, a compound that emits phosphorescence at room temperature (25 ° C).
- a preferable phosphorescence quantum yield is 0.1 or more.
- the phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of the Fourth Edition Experimental Chemistry Course 7. Phosphorescence quantum yield in solution can be measured using various solvents
- the phosphorescence dopant according to the present invention achieves the above phosphorescence quantum yield (0.01 or more) in any solvent.
- the phosphorescent dopant emits light in two types in principle. One is the recombination of carriers on the host compound in which carriers are transported, resulting in the generation of an excited state of the host compound.
- the energy transfer type is to obtain light emission from the phosphorescent dopant by transferring the energy of the phosphorescent dopant to the phosphorescent dopant, and the other is that the phosphorescent dopant becomes a carrier trap, and recombination of carriers occurs on the phosphorescent dopant and causes phosphorescence. It is a carrier trap type in which light emission from the optical dopant can be obtained.
- the excited state energy of the phosphorescent dopant is required to be lower than the excited state energy of the host compound.
- the phosphorescent dopant can be appropriately selected and used as a known medium used for the light emitting layer of the organic EL device.
- the phosphorescent dopant according to the present invention is preferably a complex compound containing a metal of group 8 to LO in the periodic table of elements, more preferably an iridium compound, an osmium compound, or a platinum compound ( Platinum complex compounds), rare earth complexes, most preferred
- V ⁇ is an iridium compound.
- Rh-1 Rh-2 Rh-3 [0112] (Fluorescent dopant (also fluorescent compound)!
- Fluorescent dopants include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes Examples thereof include dyes, perylene dyes, stilbene dyes, polythiophene dyes, and rare earth complex phosphors.
- the injection layer is provided as necessary, and includes an electron injection layer and a hole injection layer, and as described above, exists between the anode and the light emitting layer or hole transport layer and between the cathode and the light emitting layer or electron transport layer. Hey.
- the injection layer is a layer provided between the electrode and the organic layer in order to lower the drive voltage and improve the light emission luminance.
- the organic EL element and the forefront of its industrialization June 30, 1998) (Published by ES Co., Ltd.) ”, Chapter 2“ Chapter 2 Electrode Materials ”(pages 123-166) in detail, the hole injection layer (anode buffer layer) and electron injection layer (cathode buffer layer) There is.
- anode buffer layer (hole injection layer) The details of the anode buffer layer (hole injection layer) are also described in JP-A-9-45479, JP-A-9260062, JP-A-8-288069 and the like.
- a phthalocyanine buffer layer typified by phthalocyanine, an oxide buffer layer typified by vanadium oxide, an amorphous carbon buffer layer, a polymer buffer layer using a conductive polymer such as polyarene (emeraldine) or polythiophene Etc.
- cathode buffer layer (electron injection layer) The details of the cathode buffer layer (electron injection layer) are also described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium Metal buffer layer typified by aluminum, etc. Alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, acid salt typified by acid aluminum One thing buffer is one example.
- the buffer layer (injection layer) is preferably a very thin film, although the film thickness is preferably in the range of 0.1 nm to 5 m, although it depends on the desired material. [0118] ⁇ Blocking layer: hole blocking layer, electron blocking layer ⁇
- the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A-11 204258, 11-204359, and “Organic EL device and the forefront of its industrialization” (published by NTS Corporation on November 30, 1998). There is a hole blocking layer.
- the hole blocking layer has a function of an electron transport layer in a broad sense, and has a hole blocking material force that has a function of transporting electrons and has a very small ability to transport holes, and transports electrons. By blocking holes, the recombination probability of electrons and holes can be improved. Further, the structure of the electron transport layer described later can be used as a hole blocking layer according to the present invention, if necessary.
- the hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
- the hole blocking layer preferably contains the azacarbazole derivative mentioned as the above-mentioned host compound.
- the light emitting layer having the longest emission maximum wavelength is closest to the anode among all the light emitting layers.
- 50% by mass or more of the compound contained in the hole blocking layer provided at the position has an ionization potential of 0.3 eV or more with respect to the host compound of the shortest wave emitting layer. Better!/,.
- the ionic potential is defined by the energy required to release an electron at the HOMO (highest occupied molecular orbital) level of a compound to the vacuum level, and can be obtained by the following method, for example.
- Gaussian98 (Gaussian98, Revision A. ⁇ 1.4, MJ Frisch, et al, Lraussian, Inc., Pittsburg h PA, 2002.)
- the ionization potential can be calculated by rounding off the second decimal place of the value (eV unit converted value) calculated by structural optimization using B3LYPZ6-31G * as a keyword. The background to this calculated value is valid. This is because the correlation between the calculated value obtained by the method and the experimental value is high.
- the ion potential can also be obtained by a direct measurement method using photoelectron spectroscopy.
- a method known as ultraviolet photoelectron spectroscopy using a low energy electron spectrometer “Model AC-1” manufactured by Riken Keiki Co., Ltd. can be suitably used.
- the electron blocking layer has a function of a hole transport layer in a broad sense, and has a function of transporting holes while having a material force with extremely small ability to transport electrons, thereby transporting holes.
- the probability of recombination of electrons and holes can be improved.
- the structure of the hole transport layer described later can be used as an electron blocking layer as necessary.
- the film thickness of the hole blocking layer and the electron transport layer according to the present invention is preferably 3 ⁇ ! ⁇ 100 nm, more preferably 5 ⁇ ! ⁇ 30nm.
- the hole transport layer is a hole transport material having a function of transporting holes.
- a hole injection layer and an electron blocking layer are also included in the hole transport layer.
- the hole transport layer can be provided as a single layer or a plurality of layers.
- the hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic.
- triazole derivatives for example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, violazoline derivatives and pyrazolone derivatives, fluorenedamine derivatives, arylene amine derivatives, amino substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives
- Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
- aromatic tertiary amine compounds and styrylamine compounds include N, N, N ', N'-tetraphenyl-1,4'-daminophenol; N, N' —Differ I N, N '— Bis (3-methylphenol) 1 [1, 1' — Biphenyl] 1, 4, 4 '— Diamine (TPD); 2, 2 Bis (4 di-l triaminophenol) propane; 1, 1 —Bis (4 di-l-triaminophenol) cyclohexane; N, N, N ′, N ′ —Tetra-p-tolyl-1,4,4′-diaminobiphenyl; 1, 1 Bis (4 di-l-tri-laminophenol) 4-phenolic oral hexane; bis (4-dimethylamino-2-methylphenol) phenylmethane; bis (4-di-p-triaminophenol) phenolmethane; N, N '— diphenyl N, N
- No. 5,061,569 for example, 4, 4 ′ bis [N— (1-naphthyl) N phenolamino] biphenyl- 4, 4 ', A "—Tris [? ⁇ — (3-methylphenol-) in which three triphenylamine units described in JP-A-4 308688 are connected in a starburst type.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- Inorganic compounds such as P-type-Si and p-type-SiC can also be used as the hole injection material and hole transport material.
- the hole transport layer is formed by thin-filming the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Can be formed.
- a vacuum deposition method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- a vacuum deposition method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- a vacuum deposition method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- LB method
- a hole transport layer having a high p property doped with impurities can be used. Examples thereof are described in JP-A-4-297076, JP-A-2000-196140, 2001-102175, J. Appl. Phys., 95, 5773 (2004), etc. Can be listed.
- the electron transport layer is a material force having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer.
- An electron transport layer may be provided as a single layer or multiple layers.
- an electron transport material also serving as a hole blocking material
- Any material can be selected from conventionally known compounds as long as it has a function of transmitting electrons injected from the electrode to the light-emitting layer.
- Examples include fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide oxide derivatives, strength rubodiimides, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives, and the like.
- thiadiazole derivatives in which the oxygen atom of the oxaziazole ring is substituted with a sulfur atom
- quinoxaline derivatives having a quinoxaline ring known as an electron-withdrawing group can also be used as the electron transporting material.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- metal complexes of 8 quinolinol derivatives such as tris (8 quinolinol) aluminum (Alq), tris (5,7-dichloro-1-8-quinolinol) aluminum, tris (5,7-dive mouth) 8 quinolinol) aluminum, tris (2methyl 8quinolinol) aluminum, tris (5-methyl 8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), etc.
- the central metals of these metal complexes are In, Mg, Metal complexes replacing Cu, Ca, Sn, Ga or Pb can also be used as electron transport materials.
- One or metal phthalocyanine, or those having a terminal substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material.
- the distyrylvirazine derivative exemplified as the material for the light-emitting layer can also be used as an electron transport material, and, like the hole injection layer and the hole transport layer, n-type-Si, n-type-SiC, etc.
- Inorganic semiconductors can also be used as electron transport materials.
- the electron transport layer is obtained by thin-filming the electron transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Can be formed.
- a vacuum deposition method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- LB method LB method.
- the electron transport layer may have a single layer structure that can be one or more of the above materials.
- an electron transport layer having a high n property doped with impurities may be used. Examples thereof are described in JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, Appl. Phys., 95, 5773 (2004), etc. The thing which was done is mentioned.
- an electrode material made of a metal, an alloy, an electrically conductive compound or a mixture thereof having a large work function (4 eV or more) is preferably used.
- an electrode substance include metals such as Au, and conductive transparent materials such as Cul, indium tinoxide (IT 0), SnO, and ZnO.
- IDIXO In O—ZnO
- Electrode materials can be formed into a thin film by vapor deposition or sputtering, and a pattern of the desired shape can be formed by a single photolithography method. A pattern may be formed through a mask having a desired shape when the electrode material is deposited or sputtered.
- a wet film formation method such as a printing method or a coating method can also be used.
- the transmittance should be greater than 10%.
- the sheet resistance as the anode is preferably several hundred ⁇ or less.
- the film thickness depends on the material, it is usually selected in the range of 10 nm to 1000 nm, preferably 10 nm to 200 nm.
- the cathode a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used.
- electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium Z copper mixture, magnesium Z silver mixture, magnesium Z aluminum mixture, magnesium Z indium mixture, aluminum Z acid aluminum -Um (Al O)
- the cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
- the sheet resistance as a cathode is several hundred ⁇ . ⁇ 5 m, preferably 50 nm to 200 nm.
- the light emission luminance is advantageously improved.
- a transparent or semi-transparent cathode After producing a film with a thickness of ⁇ 20 nm, a transparent or semi-transparent cathode can be produced by producing the conductive transparent material mentioned in the description of the anode on the anode. It is possible to produce a device in which both cathodes are transparent.
- the support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention, there is no particular limitation on the type of glass, plastic, etc., and it is transparent. Or opaque. Support substrate side The plate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellose diacetate, cenorelose triacetate, cenorelose acetate butyrate, and cenolate mouthpiece.
- Cellulose esters such as Sacetate Propionate (CAP), Cellulose Acetate Phthalate (TAC), Cellulose Nitrate or Derivatives , Polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide, polyethersulfone (PES), polyester
- any material may be used as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
- silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can.
- the method for forming the barrier film is not particularly limited, for example, vacuum deposition, sputtering , Reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma polymerization, plasma CVD, laser CVD, thermal CVD, coating, etc. Force that can be used The method using an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferred.
- Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, non-transparent resin substrates, ceramic substrates, and the like.
- the external extraction efficiency at room temperature of light emission of the organic EL device of the present invention is preferably 1% or more, more preferably 5% or more.
- the external extraction quantum efficiency (%) the number of photons emitted to the outside of the organic EL element.
- a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts light emitted from an organic EL element into multiple colors using a phosphor may be used in combination.
- the ⁇ max of light emission of the organic EL element is preferably 480 nm or less.
- sealing means used in the present invention include a method of bonding a sealing member, an electrode, and a support substrate with an adhesive.
- the sealing member may be a concave plate shape or a flat plate shape as long as it is disposed so as to cover the display region of the organic EL element. Further, transparency and electrical insulation are not particularly limited.
- Specific examples include a glass plate, a polymer plate 'film, a metal plate' film and the like.
- the glass plate include soda-lime glass, norlium strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, norium borosilicate glass, and quartz.
- the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.
- the metal plate include stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum power, and one or more metal or alloy power selected. .
- the ability to form a thin film element also has the power of polymer film, metal film.
- the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 X 10 _3 mlZ (m 2 '24h'MPa) or less, and a method according to JIS K 7129-1992.
- the measured water vapor transmission rate (25 ⁇ 0.5 ° C, relative humidity (90 ⁇ 2)% RH) is preferably less than l X 10 _3 gZ (m 2 '24h).
- Sand blasting, chemical etching, or the like is used to process the sealing member into a concave shape.
- an adhesive such as a photocuring and thermosetting adhesive having a reactive bur group of an acrylic acid-based oligomer or a methacrylic acid-based oligomer, or a moisture-curing type adhesive such as 2 cyanoacrylate.
- a photocuring and thermosetting adhesive having a reactive bur group of an acrylic acid-based oligomer or a methacrylic acid-based oligomer, or a moisture-curing type adhesive such as 2 cyanoacrylate.
- heat- and chemical-curing type two-component mixing
- epoxy type can be mentioned.
- hot-melt type polyamide, polyester, and polyolefin can be mentioned.
- a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
- the adhesive can be hardened up to a room temperature force of 80 ° C. Further, a desiccant may be dispersed in the adhesive. A commercially available dispenser may be used to apply the adhesive to the sealing part, or it may be printed like screen printing!
- the electrode and the organic layer may be coated on the outer side of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer may be formed in contact with the support substrate to form a sealing film.
- the material for forming the film may be any material as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
- silicon oxide, silicon dioxide, silicon nitride, etc. can be used.
- the method for forming these films is not particularly limited, for example, vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma polymerization method.
- Plasma CVD method, laser C VD method, thermal CVD method, coating method, etc. can be used.
- Examples of the hygroscopic compound include metal oxides (for example, acid sodium, acid potassium, acid calcium, barium oxide, magnesium oxide, acid aluminum, etc.), sulfate (For example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate, etc.), metal halides (for example, calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, nordium iodide) , Magnesium iodide, etc.), perchloric acids (for example, barium perchlorate, magnesium perchlorate, etc.) and the like, and sulfates, metal halides and perchloric acids are preferably anhydrous salts. Used.
- metal oxides for example, acid sodium, acid potassium, acid calcium, barium oxide, magnesium oxide, acid aluminum, etc.
- sulfate for example, sodium sulfate, calcium sulfate
- a protective film or a protective plate may be provided outside the sealing film or the sealing film on the side facing the support substrate with the organic layer interposed therebetween.
- the mechanical strength is not necessarily high. Therefore, it is preferable to provide such a protective film and a protective plate.
- a material that can be used for this the same glass plate, polymer plate 'film, metal plate' film, etc. that are used for the sealing can be used. It is preferable to use a polymer film.
- the organic EL element emits light inside the layer with a refractive index higher than that of air (refractive index is about 1.7 to 2.1), and only about 15% to 20% of the light generated in the light emitting layer can be extracted. It is generally said that there is nothing. This is because light incident on the interface (transparent substrate-air interface) at an angle ⁇ greater than the critical angle causes total reflection and cannot be extracted outside the device. This is because light undergoes total reflection with the substrate, the light is a transparent electrode, and is guided through the light emitting layer. As a result, the light escapes in the direction of the element side surface.
- a method for improving the light extraction efficiency for example, a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air (US Pat. No. 4,774,435) ), And a method for improving efficiency by providing the substrate with a light condensing property (JP-A 63-31) 4795), a method of forming a reflective surface on the side surface of the element (Japanese Unexamined Patent Publication No. 1-220394), a flat layer having an intermediate refractive index is introduced between the substrate and the light emitter, and an antireflection film is formed.
- a forming method Japanese Patent Laid-Open No.
- these methods can be used in combination with the organic EL device of the present invention.
- a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter can be suitably used.
- a method of forming a diffraction grating between any one of the substrate, the transparent electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
- the present invention can obtain an element having higher brightness or durability.
- the low refractive index layer examples include air-mouthed gel, porous silica, magnesium fluoride, fluorine-based polymer, and the like. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
- the thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave exuded by evanescent enters the substrate.
- the method of introducing a diffraction grating into an interface or any medium that causes total reflection has a feature that the effect of improving the light extraction efficiency is high.
- This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction.
- Light that cannot be emitted due to total internal reflection between layers is diffracted by introducing a diffraction grating into any layer or medium (inside the transparent substrate or transparent electrode). Let's take it out It is a life.
- the introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so a general one-dimensional diffraction grating having a periodic refractive index distribution only in one direction diffracts only light traveling in a specific direction. The light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, the light traveling in all directions is diffracted, and the light extraction efficiency increases.
- the position where the diffraction grating is introduced may be in any one of the layers or in the medium (in the transparent substrate or transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated. .
- the period of the diffraction grating is preferably about 1Z2 to about 3 times the wavelength of light in the medium.
- the arrangement of the diffraction grating is preferably two-dimensionally repeated, such as a square lattice, a triangular lattice, or a honeycomb lattice.
- the organic EL device of the present invention can be processed on a light extraction side of a substrate, for example, by providing a microlens array-like structure, or combined with a so-called condensing sheet, in a specific direction, for example, on the device light emitting surface.
- a specific direction for example, on the device light emitting surface.
- the brightness in a specific direction can be increased.
- quadrangular pyramids are arranged two-dimensionally on the light extraction side of the substrate so that one side is 30 ⁇ m and the apex angle is 90 degrees.
- One side is 10 / z m ⁇ : LOO / z m is preferred. If it is smaller than this, the effect of diffraction is generated, and if the color is too large, the thickness becomes thick, which is not preferable.
- the light condensing sheet for example, a sheet that has been put to practical use in an LED backlight of a liquid crystal display device can be used.
- a brightness enhancement film (BEF) manufactured by Sumitomo 3EM may be used.
- the shape of the prism sheet for example, the base material may be formed with stripes having a vertex angle of 90 degrees and a pitch of 50 111, a shape with rounded vertex angles, and a random pitch. It may be a changed shape or other shapes.
- a light diffusing plate 'film may be used in combination with the light collecting sheet.
- a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
- a desired electrode material for example, a thin film having a material force for an anode is 1 ⁇ m or less, preferably ⁇ !
- An anode is formed by a method such as vapor deposition or sputtering so that a film thickness of ⁇ 200 nm is obtained.
- vapor deposition method and a wet process (spin coating method, casting method, ink jet method, printing method) as mentioned above.
- film formation by a coating method such as a spin coating method, an ink jet method, or a printing method is preferable.
- liquid medium for dissolving or dispersing the organic EL material according to the present invention examples include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, and halogenated carbonization such as dichlorobenzene. Hydrogen, aromatic hydrocarbons such as toluene, xylene, mesitylene and cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin and dodecane, and organic solvents such as DMF and DMSO can be used. Moreover, as a dispersion method, it can disperse
- dispersion methods such as an ultrasonic wave, high shear force dispersion
- a thin film that also has a material force for the cathode is formed thereon by 1 ⁇ m or less, preferably by a method such as vapor deposition or sputtering so that the film thickness is in the range of 50 nm to 200 nm.
- the order of preparation may be reversed, and the cathode, the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode may be formed in this order.
- the multicolored color thus obtained
- a direct current voltage is applied to the display device, light emission can be observed by applying a voltage of about 2 to 40 V with the anode as + and the cathode as one polarity.
- An alternating voltage may be applied.
- the AC waveform to be applied is arbitrary.
- the organic EL element of the present invention can be used as a display device, a display, and various light sources.
- light sources include lighting devices (home lighting, interior lighting), clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, Examples include, but are not limited to, a light source of an optical sensor, but it can be effectively used particularly as a backlight of a liquid crystal display device and a light source for illumination.
- patterning may be performed by a metal mask, an ink jet printing method, or the like during film formation, if necessary.
- patterning only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or in the production of an element that may be patterned on the entire layer, a conventionally known method Method can be used.
- a 40 nm-thick emission layer was provided by co-evaporation on the hole transport layer at 0.2 nmZ seconds and 0.012 nm / second.
- the substrate temperature at the time of vapor deposition was room temperature.
- the heating boat containing BCP was energized and heated, and deposited on the light emitting layer at a deposition rate of 0. InmZ seconds to provide a hole blocking layer having a thickness of lOnm.
- An electron transport layer having a thickness of 40 nm was further deposited on the hole blocking layer at m / second.
- the substrate temperature at the time of vapor deposition was room temperature.
- the decrease in concentration from the start of energization of the device was analyzed for the example compound 48, which is a reactive organic compound according to the present invention, as follows.
- Organic EL device A-1 is a device after application of 2.5 mAZcm 2 constant current for 1 000 hours at 23 ° C in a dry nitrogen gas atmosphere, and the device is applied after 4000 hours under the same conditions.
- Is A-3 [0204] The concentration of Exemplified Compound 48 in each of the hole transport layers of Organic EL devices A-1, A-2 and A-3 is measured by a method of measuring the distribution of vinyl groups in Exemplified Compound 48. Asked. Here, the distribution of the double bond of the vinyl group can be obtained by the following means.
- the organic EL element samples 1 to 3 were diagonally cut with a Cycus NN04 type manufactured by Daiblauintes. Cutting was performed at an enlargement ratio of 500 times, and an analysis area of a hole transport layer having a width of 20 ⁇ m was obtained. Next, the double bond remaining in the hole transport layer was labeled on the cut surface by bromine addition. Regarding the sample after labeling, the elemental composition distribution on the surface of the cutting surface was measured using an X-ray photoelectron spectrometer ULVAC-FAI QuanteraSXM to obtain the elemental composition distribution on the surface of the cutting surface.
- ITO substrate 100 mm X 100 mm X I. 1 mm thick ITO (indium tin oxide) filmed on lOOnm substrate ( ⁇ Techno Glass Co., Ltd. ⁇ 45)
- the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
- This transparent support substrate is fixed to a substrate holder of a commercially available vacuum deposition apparatus, while 200 mg of ⁇ NPD is placed in a molybdenum resistance heating boat, and the host compound and the host compound are placed in another molybdenum resistance heating boat.
- the heating boat containing CBP and Ir-1 was energized and heated, and co-deposited on the hole transport layer at a deposition rate of 0.2 nmZ second and 0.012 nm / second, respectively, A light emitting layer with a thickness of 40 nm was provided.
- the substrate temperature at the time of vapor deposition was room temperature.
- the heating boat containing BCP was energized and heated, and deposited on the light emitting layer at a deposition rate of 0. InmZ seconds to provide a hole blocking layer having a thickness of lOnm.
- the heating boat containing Alq was further heated by energization, and the deposition rate was 0.1 nm.
- An electron transport layer having a thickness of 40 nm was further deposited on the hole blocking layer at a rate of / sec.
- the substrate temperature during vapor deposition was room temperature.
- Organic EL devices 1-2 to 1-5 were prepared in the same manner as in the manufacture of organic EL device 1-1, except that CBP and Ir-1 in the light emitting layer were replaced with the compounds shown in Table 1.
- the external extraction quantum efficiency (%) was measured when a constant current of 2.5 mA / cm 2 was applied in a dry nitrogen gas atmosphere at 23 ° C.
- a spectral radiance meter CS-1000 manufactured by Ko-Force Minolta was used in the same manner.
- the time required for the luminance to drop to half of the luminance immediately after the start of light emission is measured, and this is used as the half-life time ( ⁇ 0.5). It was used as an index.
- a spectral radiance meter CS-1000 manufactured by Ko-Force Minolta was used.
- Organic EL element 2-1 was produced in the same manner as in the production of organic EL element 1-1, except that Ir-1 was changed to Ir-9. Also, organic EL element 2 2 2-5 was prepared in the same manner as organic EL element 1-2, except that organic compounds 1-1 and Ir-1 in organic EL element 1-2 were replaced as shown in Table 2. .
- An organic EL element 3-1 was produced in the same manner as in the production of the organic EL element 1-1 of Example 2, except that Ir-1 was changed to Ir-12.
- Organic EL devices 3-2 to 3-5 were prepared in the same manner except that Exemplified compounds 1-1 and Ir-1 of organic EL device 1-2 were replaced with M (Table 3).
- Organic EL devices 4-1 to 4-3 were prepared in the same manner as in the production of organic EL device 3-1 of Example 4, except that the compounds were changed to the compounds shown in Table 4.
- ITO substrate 100 mm X 100 mm X I. 1 mm thick ITO (Indium Toxide) filmed on lOOnm substrate ( ⁇ Techno Glass Co., Ltd. ⁇ 45) was patterned, and then this ITO transparent electrode was provided.
- the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
- This substrate was attached to a commercially available spin coater, and a solution obtained by dissolving Exemplified Compound 4 1 (60 mg) in 10 ml of toluene was spin-coated (film thickness of about 40 nm) and ultraviolet light under conditions of 1000 rpm and 30 seconds. After irradiation for 30 seconds, vacuum drying was performed at 60 ° C. for 1 hour to form a hole transport layer.
- This substrate was fixed to the substrate holder of the vacuum deposition apparatus, and 200 mg of Alq was placed in a molybdenum resistance heating boat and attached to the vacuum deposition apparatus. Pressure in the vacuum tank was reduced to 4 X 10- 4 Pa
- the heating boat containing Alq is further energized and heated, and the deposition rate is 0.
- An electron transport layer having a thickness of 40 nm was further formed by vapor deposition on the hole blocking layer at Inm / second.
- the substrate temperature during vapor deposition was room temperature.
- This element was driven at a constant current of 2000 cdZm 2 and light emission could be confirmed.
- Figure 1 shows a schematic configuration diagram of an organic EL full-color display device. After patterning at a pitch of 100 ⁇ m on a substrate (NH45 manufactured by NH Techno Glass) with an ITO transparent electrode (102) formed on an ITO transparent electrode (102) on a glass substrate 101 as an anode, an ITO transparent electrode is formed on the glass substrate. In the meantime, a non-photosensitive polyimide partition wall 103 (width 20 ⁇ m, thickness 2.0 m) was formed by photolithography.
- a hole injection layer composition having the following composition was discharged and injected between polyimide barrier ribs on the ITO electrode using an ink jet head (manufactured by Epson Corporation; MJ800C), irradiated with ultraviolet light for 30 seconds, 60 ° C, 10 ° C.
- a hole injection layer 104 having a film thickness of 40 nm was produced by a drying treatment for 30 minutes.
- the fabricated organic EL devices exhibited blue, green, and red light emission by applying voltage to the respective electrodes, which proved to be usable as a full-color display device.
- compound 2-- to 2-10 was used in place of Ir-1, Ir-12, Ir-9, and compound 1-1 or compound 1-3-1-10 was used in place of compound] 2. It was also proved that organic EL devices can be used as full-color display devices as well.
- a ITO substrate 100 mm X 100 mm X I. 1 mm thick ITO (Indium Toxide) filmed on lOOnm substrate ( ⁇ Techno Glass Co., Ltd. ⁇ 45) was patterned, and then this ITO transparent electrode was provided.
- the transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
- This substrate is attached to a commercially available spin coater, and a solution obtained by dissolving Compound 4-8 (60 mg) in 10 ml of toluene is spin-coated (film thickness of about 40 nm) and irradiated with ultraviolet light for 30 seconds under conditions of 1000 rpm and 30 seconds. Then, it was vacuum dried at 60 ° C. for 1 hour to form a hole transport layer.
- this substrate was fixed to a substrate holder of a vacuum vapor deposition apparatus, and 200 mg of Alq was placed in a molybdenum resistance-mouth heat boat and attached to the vacuum vapor deposition apparatus. Set the vacuum chamber to 4 X 10— 4 Pa.
- the heating boat containing Alq was energized and heated, and the deposition rate was 0.1 nm.
- Evaporation was performed on the electron transport layer in Z seconds, and an electron transport layer having a thickness of 40 nm was further provided.
- the substrate temperature at the time of vapor deposition was room temperature.
- An organic EL element 6-1 was prepared.
- ITO substrate 100 mm X 100 mm X I. 1 mm
- ITO indium tin oxide
- lOOnm-coated substrate ⁇ Techno Glass Co., Ltd. 45-45
- the provided transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
- This substrate was transferred to a nitrogen atmosphere, and 20 mg of reactive organic compound 4 was deposited on the hole transport layer.
- a solution of 11 in 51111 toluene was formed by spin coating under conditions of 2000 to 111 for 30 seconds. Further, UV irradiation (100 W UVA) was performed for 10 seconds so that the reactive organic compound 4-11 remained, and photopolymerization / crosslinking was performed to form a second hole transport layer having a thickness of 30 nm. The amount (also referred to as concentration) of the reactive organic compound 4-11 in the layer was determined by the method described later.
- the time when the initial brightness decreased by 10% is the same as in element 1 (90).
- the time when the initial luminance was reduced by 50% was defined as device 1 (50), and the Tg of the hole transport layer was measured by the following method.
- the three organic EL element samples were obliquely cut with a CYCUS NN04 type manufactured by Daibrowintes. Cutting was performed at an enlargement ratio of 500 times, and an analysis area of a 15-m wide hole transport layer was obtained.
- a Tg (glass transition point) of the hole transport layer region was measured by combining an atomic force microscope with a thermal probe of a heater / temperature detector.
- Tg (90%) Glass transition point of hole transport layer at 90% of initial luminance
- Tg (50%) Glass transition point of hole transport layer at 50% of initial luminance
- Tg (initial) Glass transition point of the hole transport layer of the device before the start of energization
- Organic EL element 2 was prepared in exactly the same manner as organic EL element 1. Exactly the same as for organic EL element 1, after calculating the remaining reactive organic compound amount in element 2 (90) at the point when it decreased by 10% from the initial luminance, UV irradiation was performed for 60 seconds to leave the remaining reactivity. Organic compounds disappeared.
- This device was further applied at a constant current of 2.5 mAZcm 2 , and the amount of the remaining reactive organic compound was calculated using device 2 (50) as the time point when the initial luminance decreased by 50%.
- the Seiana ⁇ transmission layer was a second hole transporting layer to 30nm deposited TPD .
- Ir-1 was co-deposited so as to be doped with 6% by mass with respect to tBu-PBD and tBu-PBD, thereby forming a light emitting layer having a film thickness of 50 nm.
- a cathode was formed by vapor-depositing 10 nm of calcium as a cathode buffer layer and 110 ⁇ m of aluminum as a cathode, whereby an organic EL device 3 was produced.
- the amount of the remaining reactive organic compound was calculated in the same manner as in the organic EL device 1, with the time when the initial luminance decreased by 10% and 50% as the devices 3 (90) and (50), respectively.
- PEDOTZPSS polystyrene sulfonate
- This substrate was transferred to a nitrogen atmosphere, and a solution obtained by dissolving 20 mg of the reactive organic compound 4-11 in 51111 toluene on the hole transport layer was spin-coated under conditions of 2000 to 111 for 30 seconds. To form a film. Further, UV irradiation (lOOW UVA) was performed for 15 seconds so that the reactive organic compound 4-11 remained, and photopolymerization / crosslinking was performed to form a second hole transport layer having a thickness of 30 nm.
- lOOW UVA UV irradiation
- a 25 nm electron transport layer was formed.
- FIG. 1 shows a schematic configuration diagram of an organic EL full-color display device.
- Glass substrate as anode 10
- ITO transparent electrode (102) lOOnm (NH Techno Glass NA45)
- a partition 103 made of conductive polyimide was formed by photolithography.
- a hole injection layer composition having the following composition was discharged and injected between polyimide barrier ribs on the ITO electrode using an ink jet head (manufactured by Epson Corporation; MJ800C), irradiated with ultraviolet light for 30 seconds, 60 ° C, 10 ° C.
- a hole injection layer 104 having a film thickness of 40 nm was produced by a drying treatment for 30 minutes.
- each light emitting layer (105B, 105G, 105R).
- Al (106) was vacuum-deposited as a cathode so as to cover the light emitting layer 105, and an organic EL device was produced.
- the fabricated organic EL devices exhibited blue, green, and red light emission by applying voltage to each electrode, which proved to be usable as a full-color display device.
- a white light-emitting organic EL device was obtained in the same manner as in the organic EL device 6 of Example 10, except that the compound 2-2 used in the light-emitting composition was changed to a mixture of 2-2, 2 5 and 2-9. 6W (white) was produced.
- the non-light-emitting surface was covered with a glass case to obtain a lighting device.
- the illuminating device could be used as a thin illuminating device that emits white light with high luminous efficiency and long emission life.
- ITO substrate 100 mm X 100 mm X I. 1 mm
- ITO indium tin oxide
- lOOnm-coated substrate ⁇ Techno Glass Co., Ltd. 45-45
- the provided transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
- This substrate was transferred to a nitrogen atmosphere, and a solution of 20 mg of Compound 4-11 dissolved in 5 ml of toluene was formed on the hole transport layer by spin coating at 2000 rpm for 30 seconds. Further, UV irradiation (100 W UVA) was performed for 15 seconds so that unreacted 4-11 remained, and photopolymerization / crosslinking was performed to form a second hole transport layer having a thickness of 30 nm. The amount of unreacted 4-11 was determined by the analytical method described later.
- the three organic EL element samples were obliquely cut with a Dyblawintes Cycus NN04 type. Cutting was performed with an enlargement ratio of 500 times, and an analysis area of a hole transport layer having a width of 15 ⁇ m was obtained. Next, the double bond remaining in the hole transport layer was labeled on the cut surface by bromine addition. Regarding the sample after labeling, the elemental composition distribution on the surface of the cutting surface was measured using an X-ray photoelectron spectrometer ULVAC-FAI QuanteraSXM to obtain the elemental composition distribution on the surface of the cutting surface. From this elemental analysis result, the amount of the remaining reactive organic compound was calculated. The results are shown in Table 7.
- Organic EL device 2 was fabricated in exactly the same manner as organic EL device 1. The obtained device was exactly the same as the organic EL device 1, and when the amount of the reactive organic compound remaining in the device 2 (M90) was calculated at the time when the initial luminance decreased by 10%, UV irradiation was performed for 60 seconds, The remaining reactive organic compounds were lost. The device was further applied with a constant current of 2.5 mAZcm 2 , and the amount of reactive organic compounds remaining was calculated with device 2 (M70) at the point when the initial luminance decreased 30%.
- Ir-1 was co-evaporated so as to be doped with tBu-PBD and 6% to form a light emitting layer having a thickness of 50 nm. Further, a cathode was formed by vapor-depositing 10 nm of calcium as a cathode buffer layer and 1 lOnm of aluminum as an anode, and an organic EL device 3 was produced.
- the amount of the remaining reactive organic compound was calculated in the same manner as in the organic EL device 1, with 10% and 30% reduction from the initial luminance as the devices 3 (M90) and (M70), respectively.
- the obtained device was exactly the same as the organic EL device 1, and the amount of the reactive organic compound remaining was defined as the device (M90) and the device (M70) when the initial luminance decreased by 10% and 30%, respectively. Was calculated.
- the organic EL device of the present invention has achieved a long lifetime, and the amount of the reactive organic compound decreased over time. It can be seen that the device showing the progress of the construction has a long life. In particular, the longer the layer reconstruction progressed over time, the more it was possible to suppress the blocking deterioration and realize a long-life device.
- This substrate was transferred to a nitrogen atmosphere, and 5 ml of 20 mg of compound 4-11 was placed on the hole transport layer.
- a solution of this in toluene was formed by spin coating under the condition of 2000 i: pm for 30 seconds. Further, irradiation with 11 $ for 15 seconds (100 ⁇ UVA) was performed so that unreacted 4-11 remained, and photopolymerization / crosslinking was performed to form a second hole transport layer having a thickness of 30 nm.
- a film was formed by spin coating under a condition of 30 seconds, and UV irradiation (100 W UVA) was performed for 30 seconds to form an electron transport layer having a film thickness of 25 nm.
- Figure 1 shows a schematic configuration diagram of an organic EL full-color display device. After patterning at a pitch of 100 ⁇ m on a substrate (NH45 manufactured by NH Techno Glass) with an ITO transparent electrode (102) formed on an ITO transparent electrode (102) on a glass substrate 101 as an anode, an ITO transparent electrode is formed on the glass substrate. In the meantime, a non-photosensitive polyimide partition wall 103 (width 20 ⁇ m, thickness 2.0 m) was formed by photolithography.
- a hole injection layer composition having the following composition was discharged and injected between polyimide barrier ribs on the ITO electrode using an ink jet head (manufactured by Epson Corporation; MJ800C), irradiated with ultraviolet light for 30 seconds, 60 ° C, 10 ° C.
- a hole injection layer 104 having a film thickness of 40 nm was produced by a drying treatment for 30 minutes.
- the fabricated organic EL devices exhibited blue, green, and red light emission by applying voltage to the respective electrodes, which proved to be usable as a full-color display device.
- a white light-emitting organic EL device was obtained in the same manner as in the organic EL device 6 of Example 13, except that the compound 2-2 used in the light-emitting composition was changed to a mixture of 2-2, 2 5 and 2-9. 6W (white) was produced.
- the non-light-emitting surface was covered with a glass case to obtain a lighting device.
- the illuminating device could be used as a thin illuminating device that emits white light with high luminous efficiency and long emission life.
Abstract
Description
Claims
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EP07740286.5A EP2001065B1 (en) | 2006-03-30 | 2007-03-29 | Organic electroluminescent device, illuminating device and display device |
US12/294,814 US7897962B2 (en) | 2006-03-30 | 2007-03-29 | Organic electroluminescence device, lighting device, and display having a reactive organic compound |
JP2008508608A JP5463668B2 (ja) | 2006-03-30 | 2007-03-29 | 有機エレクトロルミネッセンス素子、照明装置及びディスプレイ装置 |
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JPWO2007114244A1 (ja) | 2009-08-13 |
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US20100108991A1 (en) | 2010-05-06 |
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EP2001065B1 (en) | 2016-11-09 |
EP3093898B1 (en) | 2017-12-13 |
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