JP2014504430A - 発光有機エレクトロニクス装置及びその製造方法 - Google Patents
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Abstract
Description
A)異方性の分子構造を有するリン光性のエミッタとマトリックス材料が用意され;
B)第一の電極層が基板上に配設され;
C)第一の電極層上にエミッタ層が熱力学的制御下で配設され、その際リン光性のエミッタ及びマトリックス材料は、真空中で気化され、電極層上に堆積され;その際熱力学的制御によってリン光性エミッタの分子の異方性の方向づけが行われ;
D)第二の電極層がエミッタ層上に配設される。
Ir(ppy)2(acac)=(ビス(2−フェニルピリジニウム)(アセチルアセトネート)イリジウム(II))、Ir(mppy)2(acac)=(ビス[2−(p−トリル)ピリジン]アセチルアセトネート)イリジウム(III))、ビス[1−(9,9−ジメチル−9H−フルオレン−2−イル)−イソキノリン](アセチルアセトネート)イリジウム(III)、Ir(mdq)2(acac)=(ビス(2−メチル−ジベンゾ[f,h]−キノキサリン)(アセチルアセトネート)イリジウム(III))、イリジウム(III)−ビス(ジベンゾ[f,h]−キノキサリン)(アセチルアセトネート)、Ir(btp)2(acac)=(ビス(2−ベンゾ[b]チオフェン−2−イル−ピリジン)(アセチルアセトネート)イリジウム(III))、Ir(piq)2(acac)=(ビス(1−フェニルイソキノリン)(アセチルアセトネート)イリジウム(III))、Ir(fliq)2(acac)−1=(ビス[1−(9,9−ジメチル−9H−フルオレン−2−イル)−イソキノリン](アセチルアセトネート)イリジウム(III))、Hex−Ir(phq)2(acac)=ビス[2−(4−n−ヘキシルフェニル)キノリン](アセチルアセトネート)イリジウム(III)、Ir(flq)2(acac)−2=(ビス[3−(9,9−ジメチル−9H−フルオレン−2−イル)−イソキノリン](アセチルアセトネート)イリジウム(III))、ビス[2−(9,9−ジブチルフルオレニル)−1−イソキノリン](アセチルアセトネート)イリジウム(III)、ビス[2−(9,9−ジヘキシルフルオレニル)−1−ピリジン](アセチルアセトネート)イリジウム(111)、(fbi)2Ir(acac)=ビス(2−(9,9−ジエチル−フルオレン−2−イル)−1−フェニル−1H−ベンゾ[d]イミダゾラート)(アセチルアセトネート)イリジウム(III)、Ir(2−phq)2(acac)=(ビス(2−フェニルキノリン)(アセチルアセトネート)イリジウム(III))、イリジウム(III)−ビス(2−(2’−ベンゾチエニル)ピリジナト−N,C3’)(アセチルアセトネート)、Ir(BT)2(acac)=ビス(2−フェニルベンゾチアゾラート)(アセチルアセトネート)イリジウム(III)、(PQ)2Ir(dpm)=ビス(2−フェニルキノリン)(2,2,6,6−テトラメチルヘプタン−3,5−ジオナト)イリジウム(111)、(Piq)2Ir(dpm)=ビス(フェニルイソキノリン)(2,2,6,6−テトラメチルヘプタン−3,5−ジオナト)イリジウム(III)及びイリジウム(III)ビス(4−フェニルチエノ[3,2−c]ピリジナト−N,C2’)アセチルアセトネート並びに上記の物質の混合物。青色波長域で放射するエミッタ材料には、例えばイリジウムのカルベン錯体が考慮に入れられる。したがって記号「C∩N」は、イリジウム原子にカルベン炭素原子及び窒素原子を介して配位が行なわれる配位子を指す。
電子輸送材料として、例えばPBD(2−(4−ビフェニルイル)−5−(4−tert−ブチルフェニル)−1,3,4−オキサジアゾール)、BCP(2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン)、BPhen(4,7−ジフェニル−1,10−フェナントロリン)、TAZ(3−(4−ビフェニルイル)−4−フェニル−5−tert−ブチルフェニル−1,2,4−トリアゾール)、Bpy−OXD(1,3−ビス[2−(2,2’−ビピリド6−イル)−1,3,4−オキサジアゾール−5−イル]ベンゼン)、BP−OXD−Bpy(6,6’−ビス[5−(ビフェニル−4−イル)−1,3,4−オキサジアゾール−2−イル]−2,2’−ビピリジル)、PADN(2−フェニル−9,10−ジ(ナフサ−2−イル)−アントラセン)、Bpy−FOXD(2,7−ビス[2−(2,2’−ビピリド6−イル)−1,3,4−オキサジアゾール−5−イル]−9,9−ジメチルフルオレン)、OXD−7(1,3−ビス[2−(4−tert−ブチルフェニル)−1,3,4−オキサジアゾール−5−イル]ベンゼン)、HNBphen(2−(ナフサ−2−イル)−4,7−ジフェニル−1,10−フェナントロリン)、NBphen(2,9−ビス(ナフサ−2−イル)−4,7−ジフェニル−1,10−フェナントロリン)、及び2−NPIP(l−メチル−2−(4−(ナフサ−2−イル)フェニル)−1H−イミダゾ[4,5−f][1,10]フェナントロリン)並びに上記の物質の混合物が挙げられる。
Claims (15)
- 以下の工程:
A)異方性の分子構造を有するリン光性エミッタ及びマトリックス材料を用意する工程、
B)第一の電極層を基板上に配設する工程、
C)エミッタ層を熱力学的制御下で配設する工程、
その際前記リン光性エミッタ及び前記マトリックス材料は、真空中で気化され、前記第一の電極層上に堆積され、その結果前記リン光性エミッタの分子の異方性の方向づけが行われ、
D)第二の電極層をエミッタ層上に配設する工程、
を含む、第一の及び第二の電極層及びエミッタ層を有する発光有機エレクトロニクス装置の製造方法。 - 前記エミッタ層の増加率が0.5nm/秒未満であることによって、熱力学的制御が工程C)で実施される、請求項1に記載の方法。
- 堆積工程後及び/又は堆積工程中に堆積されたエミッタ層が室温より高い温度にされる又はそのような温度に保たれることによって、前記熱力学的制御が工程C)で実施される、請求項1又は2に記載の方法。
- 工程A)で異方性の分子構造を有するリン光性エミッタがイリジウム錯体、白金錯体及びパラジウム錯体及びそれらの混合から選択される、請求項1から3までのいずれか1項に記載の方法。
- 前記配位子C∩Nが、イリジウム原子と1つの五員又は六員のメタラサイクルを形成する、請求項5に記載の方法。
- 前記配位子C∩Nが、フェニルピリジン、フェニルイミダゾール、フェニルオキサゾール、ベンジルピリジン、ベンジルイミダゾール、ベンジルオキサゾール又は挙げられた化合物の1つを基本骨格として備えている配位子である、請求項6に記載の方法。
- 前記配位子C∩Nが少なくとも3つの、少なくとも一部が縮合した芳香環を備えている、請求項5から7までのいずれか1項に記載の方法。
- 前記用意されたマトリックス材料が異方性の分子構造を備えている、請求項1から8までのいずれか1項に記載の方法。
- タイプA−K−Bのマトリックス材料が選択され、その際構造要素Kは構造Ar1−X−Ar2であり、その際Ar1及びAr2は同じ又は異なる芳香環であり、及びXは単結合、別の芳香族基、又は縮合した環によるAr1及びAr2の結合であり、その際構造要素A及びBが同じ又は異なっており、それぞれ少なくとも1つの芳香環を有している、請求項1から9までのいずれか1項に記載の方法。
- 前記構造要素Kの基Ar1及びAr2がそれぞれ窒素ヘテロ環であり及び/又は前記構造要素A及びBがそれぞれ1つの芳香族置換のアミン基を含んでいる、請求項9又は10に記載の方法。
- 前記マトリックス材料がベンジジン誘導体又はフェナントロリン誘導体を含んでいる、請求項11に記載の方法。
- 前記構造要素A及びBが、それぞれ少なくとも1つの、第3級アルキル基で置換した芳香族化合物及び/又はそれぞれ少なくとも1つの縮合した多環式アリール基を含んでいる、請求項9から12までのいずれか1項に記載の方法。
- 前記マトリックス材料がホール輸送及び/又は電子輸送を行なう特性を有する、請求項9から13までのいずれか1項に記載の方法。
- 請求項1から14までのいずれか1項に記載の方法で得られる、発光有機エレクトロニクス装置。
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DE102010054893A DE102010054893A1 (de) | 2010-12-17 | 2010-12-17 | Strahlungsemittierende organisch-elektronische Vorrichtung und Verfahren zu deren Herstellung |
DE102010054893.6 | 2010-12-17 | ||
PCT/EP2011/072632 WO2012080267A2 (de) | 2010-12-17 | 2011-12-13 | Strahlungsemittierende organisch-elektronische vorrichtung und verfahren zu deren herstellung |
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- 2011-12-13 EP EP11794750.7A patent/EP2652810B9/de active Active
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Also Published As
Publication number | Publication date |
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EP2652810B1 (de) | 2021-08-11 |
KR101930411B1 (ko) | 2018-12-18 |
US20140014931A1 (en) | 2014-01-16 |
WO2012080267A2 (de) | 2012-06-21 |
DE102010054893A1 (de) | 2012-06-21 |
EP2652810A2 (de) | 2013-10-23 |
KR20130107343A (ko) | 2013-10-01 |
CN103262286A (zh) | 2013-08-21 |
CN103262286B (zh) | 2016-02-03 |
US9735397B2 (en) | 2017-08-15 |
EP2652810B9 (de) | 2021-11-10 |
JP6008869B2 (ja) | 2016-10-19 |
WO2012080267A3 (de) | 2012-08-16 |
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