Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
• • A—HUMAN NECESSITIES
  • A63—SPORTS; GAMES; AMUSEMENTS
  • A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
  • A63H29/00—Drive mechanisms for toys in general
  • A63H29/22—Electric drives
• • A—HUMAN NECESSITIES
  • A63—SPORTS; GAMES; AMUSEMENTS
  • A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
  • A63H30/00—Remote-control arrangements specially adapted for toys, e.g. for toy vehicles
  • A63H30/02—Electrical arrangements
  • A63H30/04—Electrical arrangements using wireless transmission
• • A—HUMAN NECESSITIES
  • A63—SPORTS; GAMES; AMUSEMENTS
  • A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
  • A63H31/00—Gearing for toys
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
  • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
  • G01R1/02—General constructional details
  • G01R1/06—Measuring leads; Measuring probes
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
  • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
  • G01R1/02—General constructional details
  • G01R1/06—Measuring leads; Measuring probes
  • G01R1/067—Measuring probes
  • G01R1/073—Multiple probes
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
  • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
  • G01R1/02—General constructional details
  • G01R1/06—Measuring leads; Measuring probes
  • G01R1/067—Measuring probes
  • G01R1/073—Multiple probes
  • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
  • G01R1/0735—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B33/00—Electroluminescent light sources
  • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
  • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
  • F16H—GEARING
  • F16H48/00—Differential gearings
  • F16H48/06—Differential gearings with gears having orbital motion
  • F16H48/08—Differential gearings with gears having orbital motion comprising bevel gears
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
  • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
  • G01R1/02—General constructional details
  • G01R1/06—Measuring leads; Measuring probes
  • G01R1/067—Measuring probes
  • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
  • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49002—Electrical device making
  • Y10T29/49117—Conductor or circuit manufacturing
  • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
  • Y10T29/49155—Manufacturing circuit on or in base

Definitions

• Sheet-shaped probe Method of manufacturing the same, and application thereof
• the present invention relates to a sheet-like probe suitable as a probe device for making an electrical connection to a circuit, for example, in an electrical inspection of a circuit such as an integrated circuit, a method of manufacturing the same, and an application thereof.
• the circuit is arranged according to a pattern corresponding to a pattern of an electrode to be inspected of the circuit device to be inspected.
• An inspection probe having an inspection electrode is used.
• the circuit device to be inspected is a wafer on which a large number of integrated circuits are formed
• an inspection probe for inspecting the wafer it is necessary to arrange a very large number of inspection electrodes. Since it is necessary, the inspection probe becomes extremely expensive, and when the pitch of the electrodes to be inspected is small, it is difficult to produce the inspection probe itself.
• a wafer is generally warped, and the state of the warp is different for each product (wafer). Therefore, for a large number of electrodes to be inspected on the wafer, each of the inspection electrodes of the inspection probe is used. It is practically difficult to make stable and reliable contact.
• FIG. 49 is an explanatory cross-sectional view showing a configuration of an example of a conventional probe card including an inspection circuit board 85, an anisotropic conductive sheet 80, and a sheet probe 90.
• an inspection circuit board 85 having a large number of inspection electrodes 86 formed on one surface according to a pattern corresponding to the pattern of the electrodes to be inspected of the circuit device to be inspected is provided.
• a sheet probe 90 is arranged on one surface of a substrate 85 via an anisotropic conductive sheet 80.
• the anisotropic conductive sheet 80 has conductivity only in the thickness direction, or has a pressurized conductive portion that has conductivity only in the thickness direction when pressed in the thickness direction.
• Various structures are known as a strong anisotropic conductive sheet.
• Patent Document 2 and the like disclose an anisotropic conductive sheet obtained by uniformly dispersing metal particles in an elastomer. (Hereinafter referred to as “dispersion type anisotropic conductive sheet”).
• Patent Document 3 and the like disclose that conductive magnetic particles are non-uniformly distributed in an elastomer, so that a large number of conductive portions extending in the thickness direction and an insulating portion that insulates them from each other are provided.
• An anisotropic conductive sheet (hereinafter, referred to as “an unevenly-distributed anisotropic conductive sheet” t ⁇ ⁇ ) is disclosed.
• Patent Document 4 and the like disclose a surface of a conductive portion and an insulating portion. An unevenly distributed anisotropic conductive sheet in which a step is formed is disclosed.
• the sheet probe 90 has a flexible insulating sheet 91 made of, for example, a resin, and the insulating sheet 91 is provided with a plurality of electrode structures 95 extending in the thickness direction of the insulating circuit sheet. They are arranged according to a pattern corresponding to the pattern of the inspection electrodes.
• Each of the electrode structures 95 includes a projecting surface electrode portion 96 exposed on the surface of the insulating sheet 91 and a plate-shaped back electrode portion 97 exposed on the back surface of the insulating sheet 91.
• the insulating sheet 91 is integrally connected via a short-circuit portion 98 extending through the insulating sheet 91 in the thickness direction.
• Such a sheet probe 90 is generally manufactured as follows.
• a laminated body 90A having a metal layer 92 formed on one surface of an insulating sheet 91 is prepared, and as shown in FIG. A through hole 98H penetrating in the thickness direction is formed.
• a resist film 93 is formed on the metal layer 92 of the insulating sheet 91.
• the metal layer 92 is subjected to electrolytic plating using the common electrode as a common electrode, so that the inside of the through-hole 98H of the insulating sheet 91 is filled with a metal deposit and short-circuited integrally with the metal layer 92.
• a portion 98 is formed, and a protruding surface electrode portion 96 connected to the short-circuit portion 98 is formed on the surface of the insulating sheet 91.
• the resist film 93 is removed from the metal layer 92, and as shown in FIG. 50 (d), a resist film 94A is formed on the surface of the insulating sheet 91 including the surface electrode portion 96, and the metal film 92 is formed.
• a resist film 94B is formed on the layer 92 according to the pattern corresponding to the pattern of the back electrode to be formed, and the metal layer 92 is subjected to an etching process, as shown in FIG. The exposed portion of 92 is removed to form back electrode portion 97, and thus electrode structure 95 is formed.
• the surface electrode portion 96 of the electrode structure 95 of the sheet-like probe 90 is arranged on the circuit device to be inspected, for example, on the surface of the wafer so as to be positioned on the inspection electrode of the wafer. Is done.
• the anisotropic conductive sheet 80 is pressed by the back surface electrode portion 97 of the electrode structure 95 in the sheet probe 90.
• a conductive path is formed on the anisotropic conductive sheet 80 between the back electrode portion 97 and the test electrode 86 of the test circuit board 85 in the thickness direction thereof. Electrical connection between the electrode and the test electrode 86 of the test circuit board 85 is achieved.
• the anisotropic conductive sheet 80 is deformed in accordance with the degree of warpage of the wafer, so that a large number of inspected wafers can be inspected. Good electrical connection to each of the electrodes can be reliably achieved.
• the above-described inspection probe has the following problems.
• the step of forming the short-circuit portion 98 and the surface electrode portion 96 in the above-described method for manufacturing the sheet-like probe 90 since the plating layer grows isotropically by electrolytic plating, as shown in FIG.
• the distance W from the periphery of the surface electrode part 96 to the periphery of the short-circuit part 98 is equal to the protrusion height h of the surface electrode part 96.
• the diameter R of the obtained surface electrode portion 96 is considerably larger than twice the protruding height h.
• the electrodes to be inspected in the circuit device to be inspected are minute and extremely small and are arranged at a pitch, it is not possible to secure a sufficient distance between the adjacent electrode structures 95. As a result, in the obtained sheet probe 90, the flexibility of the insulating sheet 91 is lost, and it is difficult to achieve stable electrical connection to the circuit device to be inspected.
• the protrusion height h of the surface electrode portion 96 has a large variation, stable electrical connection to the circuit device to be inspected becomes difficult, while the diameter of the surface electrode portion 96 is large. If there is a gap, there is a possibility that adjacent surface electrode portions 96 may be short-circuited.
• the protruding height h of the surface electrode portion 96 there is a means for reducing the protruding height h of the surface electrode portion 96.
• the diameter of the short-circuit portion 98 (the cross-sectional shape is not circular) In such a case, the shortest length is indicated.)
• a method of reducing r that is, reducing the diameter of the through-hole 98H of the insulating sheet 91 can be considered, but the sheet-like probe obtained by the former method is considered. For one thing, it is difficult to reliably achieve stable electrical connection to the electrode under test.
• Patent Document 5 and Patent Document 6 respectively describe Proximal force A sheet-like probe has been proposed in which a large number of electrode structures having a tapered surface electrode portion whose diameter decreases toward the distal end are arranged.
• a resist film 93A and a front-side metal layer 92A are formed in this order on the surface of the insulating sheet 91, and a back-side metal layer 92B is laminated on the back surface of the insulating sheet 91.
• a laminate 90B is prepared.
• an electrode structure forming recess 90K having a tapered shape adapted to the short-circuit portion and the front surface electrode portion of the electrode structure to be formed is formed on the back surface of the laminate 90B.
• the surface-side metal layer 92A in the laminate 90B is subjected to plating treatment as an electrode, so that metal is filled in the electrode structure forming recess 90K and the surface electrode portion 96 and A short 98 is formed.
• the front side metal layer 92A is formed on the surface of the insulating sheet material 91A having a thickness larger than the insulating sheet of the sheet probe to be formed, and the back surface of the insulating sheet material 91A is formed.
• a laminate 90C is prepared by laminating a back-side metal layer 92B on the substrate.
• a through hole extending in the thickness direction communicating with each other is formed in each of the back surface side metal layer 92B and the insulating sheet material 91A in the laminated body 90C, thereby forming the laminated body.
• a plating process is performed using the surface-side metal layer 92A of the laminate 90C as an electrode.
• the metal is filled in the electrode structure forming recess 90K to form the surface electrode portion 96 and the short-circuit portion 98.
• FIG. 53 (d) As shown in FIG. 7, an insulating sheet material 91 having a required thickness is formed, and a surface electrode portion 96 is exposed.
• the back surface side metal layer 92B is etched to form the back surface electrode portion 97, and the sheet probe 90 is obtained as shown in FIG. 53 (e).
• the surface electrode portion 96 since the surface electrode portion 96 is tapered, the surface electrode portion 96 having a small diameter and a high protruding height is connected to the surface electrode portion 96 of the adjacent electrode structure.
• the electrodes can be formed in a state where the distance from the electrodes 96 is sufficiently ensured, and the surface electrode portions 96 of the electrode structure 95 are provided with the electrode structure forming recesses 90K formed in the laminate as cavities. Since it is molded, the variation in the protruding height of the surface electrode portion 96 is small, and the V ⁇ electrode structure 95 is obtained.
• the sheet-like probe of this probe card has a flexible circular insulating sheet material 91 made of a resin such as polyimide.
• a plurality of electrode structures 95 extending in the direction are arranged according to the pattern of the electrodes to be tested of the circuit device to be tested.
• a ring-shaped support member 99 that also has a ceramic force is provided on the periphery of the insulating sheet material 91 for the purpose of controlling the thermal expansion of the insulating sheet material 91 and the like.
• Each electrode structure 95 includes a protruding surface electrode portion 96 exposed on the surface of the insulating sheet material 91 and a plate-shaped back electrode portion 97 exposed on the back surface of the insulating sheet material 91. It has a structure integrally connected via a short-circuit portion 98 extending through in the thickness direction.
• a ring-shaped support member 99 that also provides a ceramic or the like is provided on the periphery of the insulating sheet material 91. The support member 99 controls the thermal expansion of the insulating sheet material 91 in the surface direction, and prevents a displacement between the electrode structure 95 and the electrode to be inspected due to a temperature change in a burn-in test. .
• Patent Document 1 JP-A-7-231019
• Patent Document 2 JP-A-51-93393
• Patent Document 3 JP-A-53-147772
• Patent Document 4 JP-A-61-250906
• Patent Document 5 JP-A-11-326378
• Patent Document 6 JP-A-2002-196018
• Patent Document 7 Japanese Patent No. 2828410
• Patent Document 8 JP-A-2002-76074
• Patent Document 9 Japanese Patent Application No. 2004-131764
• Patent Document 10 JP 2004-172589A
• the diameter of the surface electrode portion in the electrode structure is equal to or smaller than the diameter of the short-circuit portion, that is, the diameter of the through hole formed in the insulating sheet.
• the electrode structure also loses the back surface force of the insulating sheet, and it is difficult to actually use the sheet probe.
• the electrode structure disclosed in Patent Document 10 has a holding portion on the front electrode side to prevent the electrode structure from falling off from the back surface of the insulating sheet.
• a proposed sheet probe has been proposed.
• a five-layer laminated material 132 including a front-side metal layer 122, an insulating sheet 124, a first back-side metal layer 126, an insulating layer 128, and a second back-side metal layer 130.
• an opening 134 is provided in the second backside metal layer 130 of the laminate 132, the insulating layer 128 is etched through the opening 134, and a through hole is formed in the insulating layer 128. 136 are provided.
• the first back side metal layer 126 exposed at the bottom of the through hole of the insulating layer 128 is etched to expose the insulating sheet 124 at the bottom of the through hole 136.
• the insulating sheet 124 is etched through the through holes 136 of the first backside metal layer 126. Then, the surface side metal layer 122 is exposed at the bottom of the through hole 136.
• the metal layer and the resin layer (the insulating layer 128 and the insulating sheet 124) in this manner, the second backside metal layer 130, the insulating layer 128, and the first backside metal A through hole 138 extending in the thickness direction is formed in each of the layer 126 and the insulating sheet 124 so as to communicate with each other.
• An electrode structure forming recess 90K having the form described above is formed.
• the metal is filled in the electrode structure forming recess 90K to form a surface.
• a surface electrode part 96 and a short-circuit part 98 are formed.
• the sheet-like probe 90 is obtained as shown in FIG.
• the electrode structure forming recess having a tapered shape adapted to the short-circuit portion and the surface electrode portion of the electrode structure to be formed is formed on the back surface of the laminate 90C. Since 90K is formed, the tip diameter 92T of the electrode structure forming recess is smaller than the diameter of the opening 92H formed on the back surface of the multilayer body 90C.
• the distal end of the electrode structure When the diameter of the distal end of the electrode structure is reduced, the distal end tends to be worn or chipped due to repeated use, resulting in a large variation in the height of the electrode structure. It is also necessary that the diameter of the distal end ⁇ the diameter of the proximal end is not too small.
• the diameter of the front end is adjusted by the diameter of the opening on the back side, but the diameter of the opening on the back side is adjusted by the thickness of the laminate. Adjustment was limited, and it was sometimes difficult to construct an electrode structure having a desired tip diameter particularly in the production of a fine, fine-pitch, high-density sheet-like probe.
• Such a sheet probe has the following problems.
• a wafer having a diameter of 8 inches or more has 5000 or 10,000 electrodes to be inspected, and the pitch of the electrodes to be inspected is 160 m or less.
• a sheet probe for inspecting such a wafer must have a large area corresponding to the wafer and have 5000 or 10,000 or more electrode structures arranged at a pitch of 160 m or less. It becomes.
• the material constituting the wafer e.g., linear thermal expansion coefficient of silicon, 3. is about 3 X 10- 6 ZK
• the material constituting the insulating sheet of the sheet-like probe for example, polyimide the linear thermal expansion coefficient of 4. is about 5 X 10- 5 ZK.
• the test object is a small circuit device
• the electrode to be inspected has a pitch force of 160 ⁇ m or less
• the electrode structure and the object to be inspected due to a temperature change during the burn-in test. Since it is difficult to reliably prevent displacement from the electrodes, it is difficult to stably maintain a good electrical connection state.
• Patent Document 7 Japanese Patent No. 2828410 discloses that the insulating sheet is fixed to a ring-shaped support member while tension is applied to the insulating sheet. A method to reduce the thermal expansion of the sheet has been proposed!
• Patent Document 8 Japanese Patent Application Laid-Open No. 2002-76074
• a laminated film having a structure in which an insulating film and a conductive layer are laminated is provided with tension on a ceramic ring at a predetermined temperature.
• a bump hole is formed in the laminated film, an electric plating is performed, a plating is grown in the bump hole to form a front electrode portion, and a conductive layer is selectively etched to form a back electrode portion.
• an electrode structure is formed.
• the insulating film is selectively etched to leave a ring-shaped pattern avoiding the portion of the electrode structure to form a pattern.
• Patent Document 9 Japanese Patent Application No. 2004-131764.
• the applicant of the present invention is to inspect a large-area wafer having a diameter of 8 inches or more or a circuit device in which the pitch of electrodes to be inspected is extremely small. Even so, in a burn-in test, a probe card capable of stably maintaining a good electrical connection state and a method of manufacturing the same have already been proposed.
• Patent Document 9 As shown in FIG. 55 (a), a metal plate 102 for forming a frame plate and an insulating film formed integrally on the metal plate 102 for forming a frame plate are formed.
• a laminate 106 having a resin sheet 104 is prepared, a through-hole 108 is formed in the insulating film forming resin sheet 104 of the laminate, and a plating process is performed on the laminate 106.
• a short-circuit portion 110 connected to the frame-plate-forming metal plate 102 and a surface electrode portion 112 connected to the short-circuit portion 110 are formed in the through hole 108 of the insulating film forming resin sheet 104, (See Figure 55 (b)).
• a metal frame plate 116 having a through hole 114 formed therein is formed, and a short-circuit portion 110 is formed by a part of the metal plate 102 for forming a frame plate. Is formed on the back surface electrode portion 118 connected to the substrate.
• the electrode structure 120 having the front electrode portion 112 exposed on the front surface and the back electrode portion 118 exposed on the back surface is made of a flexible resin.
• a sheet-like probe 100 composed of a contact film 124 held by an insulating film 122 and a metal frame plate 116 supporting the contact film 124 is obtained.
• the inspection target is, for example, a diameter force of 3 ⁇ 4 inch or more. Even in the case of a circuit device having a very large wafer or an extremely small pitch between the electrodes to be inspected, the displacement between the electrode structure and the electrode to be inspected due to a temperature change is reliably prevented in the burn-in test. The electrical connection is maintained stably.
• the insulating film forming resin sheet 104 such as a polyimide film, which is also strong, is not etched or an etching solution with a small etching degree, for example, a salt solution. It is necessary to use a ferric etching solution or the like.
• the metal plate 102 for forming the frame plate which is a metal member forming the metal frame plate 116 and the back electrode portion 118, can be easily etched with such an etchant.
• an etchant for example, copper, iron, stainless steel, invar type alloys such as invar, elinvar type alloys such as elinvar, alloys or alloy steels such as super invar, kovar, 42 alloy, etc. If this is the case, there are restrictions on the thickness, etc., and there are problems, for example, in terms of elasticity against bending, mechanical strength, availability
• the back electrode portion 118 a metal having excellent electrical characteristics, for example, copper, nickel, or the like, having a large linear expansion coefficient, is used as a metal plate for forming a frame plate. It cannot be used as a constituent metal of 102,
• the materials for forming the insulating film 122, the metal frame plate 116, and the ring-shaped support member include, for example,
• the insulating film 122 is made of a flexible resin such as a polyimide resin or a liquid crystal polymer,
• Metal frame plate 116-force 42 alloy composed of iron-nickel alloy steel such as invar, kovar, etc.
• the ring-shaped support member is made of a ceramic material such as alumina, silicon carbide, and silicon nitride,
• An object of the present invention is to provide a stable electric device for a circuit device having an electrode structure having a surface electrode portion having a large diameter of an insulating layer and a small diameter, and having a small-pitch electrode.
• An object of the present invention is to provide a high-durability sheet-like probe that can reliably achieve a stable connection state.
• An object of the present invention is to form an electrode structure having a surface electrode portion with a small variation in the protruding height, and to provide a stable electric device even for a circuit device having electrodes formed at a small pitch. It is an object of the present invention to provide a method capable of manufacturing a sheet-like probe that can reliably achieve a connection state and that has high durability without an electrode structure falling off from an insulating layer.
• the present invention is applicable to the burn-in test even if the inspection target is a large-area wafer having a diameter of 8 inches or more or a circuit device having an extremely small pitch of 100 ⁇ m or less.
• it is intended to provide a sheet-like probe capable of reliably preventing a displacement between an electrode structure and an electrode to be inspected due to a temperature change, thereby stably maintaining a good electrical connection state, and a method of manufacturing the same.
• the present invention is not limited to the metal type, thickness, and the like of the metal frame plate.
• the metal frame plate is made of any metal type in consideration of the coefficient of linear expansion, elasticity against bending, availability, and the like.
• a metal that is not restricted by the metal used as the metal frame plate for example, a metal having excellent electrical characteristics, such as copper, can be used as a constituent metal of the rear electrode.
• a sheet-like probe and a method for manufacturing the same It is intended to be.
• An object of the present invention is to provide a method of manufacturing a sheet-like probe that can be adjusted to a desired diameter from the front end diameter to the base end diameter of the surface electrode portion in a sheet-like probe made of a thick insulating layer. .
• An object of the present invention is to provide a probe card provided with the above-mentioned sheet probe.
• An object of the present invention is to provide an inspection device for a circuit device provided with the above-mentioned probe card.
• a sheet-like probe having a plurality of electrode structures which are arranged on the insulating layer so as to be spaced apart from each other in a surface direction thereof and extend through the insulating layer in a thickness direction thereof,
• Each of the electrode structures is a
• the insulating layer extends continuously from the base end of the surface electrode portion in the thickness direction thereof.
• a short-circuit portion connected to the back electrode portion
• a holding portion extending outwardly along the surface of the insulating layer continuously from a base end portion of the surface electrode portion
• the sheet-like probe has a metal frame plate supporting the insulating layer, the metal frame plate, a metal frame plate having a through hole formed,
• the invention is characterized in that the metal frame plate and the back electrode portion are made of different metal members.
• a plurality of through holes are formed in the metal frame plate, The contact film is supported in each of these through holes.
• the sheet-like probe of the present invention is characterized in that a ring-shaped support plate is provided at a peripheral portion of the metal frame plate, and is adhered and fixed to the insulating film.
• the sheet-shaped probe of the present invention includes: a ring-shaped support member for supporting a peripheral portion of the metal frame plate;
• the thermal expansion coefficient of the insulating film is defined as H1
• the coefficient of linear thermal expansion of the metal frame plate is H2
• the coefficient of linear thermal expansion of the metal frame plate is ⁇ 2
• the coefficient of linear thermal expansion of the ring-shaped support member is ⁇ 3
• the coefficient of linear thermal expansion ⁇ 2 of the metal frame plate is set to the following condition (5):
• the coefficient of linear thermal expansion ⁇ 3 of the ring-shaped support member is the following condition (6):
• the pitch of the electrode structure is 40 to 160 ⁇ m,
• the total number of the electrode structures is 5,000 or more.
• the ring-shaped support member is engaged with a positioning portion formed on the side of the inspection device main body on which the inspection electrode is provided, so that the inspection electrode and the inspection electrode of the inspection device are in contact with each other.
• the electrode structure formed on the insulating film is configured to be aligned.
• the sheet-like probe of the present invention is used when the sheet-like probe is used for a plurality of integrated circuits formed on a wafer to perform an electrical inspection of the integrated circuit in a wafer state. There is a feature.
• the method for producing a sheet-like probe of the present invention comprises:
• a recess for forming a front surface electrode portion is formed on the back surface of the laminate
• the surface-side metal layer is used as an electrode to perform a plating process to fill the recess for forming the surface electrode portion with metal, thereby forming a surface electrode portion protruding from the surface of the insulating layer.
• Forming a back electrode portion by performing an etching process on the second back side metal layer, Removing the front surface side metal layer and the insulating sheet to expose the front surface electrode portion and the first rear surface side metal layer;
• a step of forming a holding portion extending continuously outward along the surface of the insulating sheet by continuously etching the first rear surface side metal layer by a partial force at the base end of the surface electrode portion is characterized by having.
• the second backside metal layer is subjected to an etching treatment
• It is characterized in that it is divided and removed into a back electrode portion and a metal frame plate portion.
• the method for producing a sheet-like probe of the present invention comprises:
• the through-hole of the insulating sheet in the surface electrode part forming recess is
• the insulating sheet is characterized in that the insulating sheet is formed in a shape having a smaller diameter toward the rear surface.
• the method for producing a sheet-like probe of the present invention comprises:
• the laminate is characterized in that the insulating sheet is made of a polymer material which can be etched, and the through-hole of the insulating sheet in the recess for forming the surface electrode portion is formed by etching.
• the method for producing a sheet-like probe of the present invention comprises:
• the through hole of the insulating layer in the recess for forming a short-circuit portion is formed in a shape having a smaller diameter as it goes from the back surface to the front surface of the insulating layer.
• the method for producing a sheet probe of the present invention comprises:
• the laminate is characterized in that the insulating layer is made of a polymer material that can be etched, and a through hole of the insulating layer in the short-circuit portion forming recess is formed by etching.
• the method is characterized in that an upper force insulating layer of the metal frame plate and a second back surface side metal layer formed on the surface of the insulating layer are formed.
• a probe card for making an electrical connection between a circuit device to be inspected and a tester
• An inspection circuit board on which a plurality of inspection electrodes are formed corresponding to the electrodes to be inspected of the circuit device to be inspected;
• An anisotropic conductive connector arranged on the inspection circuit board
• the circuit device to be inspected is a wafer on which a large number of integrated circuits are formed.
• a frame plate in which a plurality of openings are formed corresponding to electrode regions where electrodes to be inspected are arranged in all or some integrated circuits formed on a wafer to be inspected;
• a probe card for making an electrical connection between a circuit device to be inspected and a tester
• An inspection circuit board on which a plurality of inspection electrodes are formed corresponding to the electrodes to be inspected of the circuit device to be inspected;
• An anisotropic conductive connector arranged on the inspection circuit board
• the probe card of the present invention The circuit device to be inspected is a wafer on which a large number of integrated circuits are formed.
• a frame plate in which a plurality of openings are formed corresponding to electrode regions where electrodes to be inspected are arranged in all or some integrated circuits formed on a wafer to be inspected;
• the wafer inspection method according to the present invention includes:
• the electrode structure is formed with the holding portion extending outward along the surface of the insulating layer continuously from the base end portion of the surface electrode portion! Therefore, even if the diameter of the surface electrode portion is small, the electrode structure does not fall off the insulating layer and high durability can be obtained.
• the burn-in test is performed! In addition, it is possible to reliably prevent the electrode structure from being displaced from the electrode to be inspected due to a temperature change, and to stably maintain a good electrical connection state.
• the contact film is supported in the through hole of the metal frame plate, the area of the contact film arranged in the through hole can be reduced. For example, ⁇ If a metal frame plate with a plurality of through holes is used corresponding to the electrode area where the electrodes to be inspected of the target circuit device are formed, they are arranged in each of these through holes, The area of each supported contact film can be significantly reduced.
• the contact film having such a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film, the thermal expansion of the insulating film can be reliably restricted by the metal frame plate.
• the inspection target is, for example, a large-area wafer with a diameter of 8 inches or more or a circuit device with extremely small electrodes to be inspected, the electrode structure and the inspection target due to temperature changes during the burn-in test Since the misalignment with the electrode is reliably prevented, a good electrical connection state can be stably maintained.
• metal frame plate and the back electrode portion are made of different metal members, there are no restrictions on the type of metal, thickness, and the like of the metal frame plate. Considering this, a metal frame plate can be formed of any metal type and any thickness.
• the back surface electrode portion is formed of a metal member force different from that of the metal frame plate, a preferable metal which is not restricted by the metal as the metal frame plate as the back surface electrode, for example, has an electric characteristic. Excellent copper or the like can be used as a constituent metal of the back electrode.
• the thermal expansion coefficient HI of the insulating film, the thermal expansion coefficient H2 of the metal frame plate, and the thermal expansion coefficient H3 of the ring-shaped support member satisfy the above-mentioned conditions (1) to (4).
• the coefficient of thermal expansion between these members so as to satisfy them, the influence of the difference in the coefficient of thermal expansion of these members, that is, the displacement between the electrode structure and the electrode to be inspected due to a temperature change, can be reduced. Can be suppressed.
• the burn-in test can be performed.
• the displacement of the electrode structure and the electrode to be inspected due to the temperature change is reliably prevented, and therefore, a sheet-like probe in which a good electric connection state is stably maintained can be manufactured.
• an insulating layer is provided, a short-circuit portion forming recess is formed in the insulating layer, and the short-circuit portion forming cavity is used as a short-circuit portion.
• the electrode structure can be configured by making the diameter of the end smaller than the diameter of the base end of the tip.
• the thickness of the insulating layer can be reduced, and the back-side electrode portion can be formed smaller.
• the metal layer extends outward from the base end portion of the surface electrode portion along the surface of the insulating layer.
• the holding portion can be reliably formed.
• a metal frame plate in which a through-hole is formed in advance, coating the metal frame plate with an insulating film, and then forming an insulating film on the metal frame plate Since the electrode structure is formed through the metal frame plate, the metal frame plate and the back electrode portion have different metal member forces.Therefore, there are restrictions on the metal type, thickness, etc. of the metal frame plate.
• a metal frame plate can be formed with an arbitrary metal type and an arbitrary thickness in consideration of elasticity against bending, availability, and the like.
• the back electrode portion is formed of a metal member force different from that of the metal frame plate
• a preferable metal is not limited to the metal as the metal frame plate as the back electrode.
• copper or the like having excellent electrical characteristics can be used as a constituent metal of the back electrode.
• the insulating layer is supported by the metal frame plate, even if the inspection target is a large-area wafer with a diameter of 8 inches or more or an extremely small circuit device with the pitch of the electrodes to be inspected of 100 ⁇ m or less, In the burn-in test, the displacement of the electrode structure and the electrode to be inspected due to the temperature change is reliably prevented, so that a sheet-like probe in which a good electrical connection state is stably maintained can be manufactured.
• the probe card of the present invention since the probe card is provided with the above-mentioned sheet-like probe, a stable electrical connection state is maintained even for a circuit device having electrodes formed at a small pitch of 120 m or less. Inspection targets that can be reliably achieved, and the electrode structure of the sheet-shaped probe does not fall off, are extremely large wafers with a diameter of 8 inches or more and extremely small pitches of the electrodes to be inspected of 100 ⁇ m or less. Even in a small circuit device, a good electrical connection state can be stably maintained in a burn-in test, so that high durability can be obtained.
• circuit device inspection apparatus of the present invention since the above-described probe card is provided, a stable electrical connection state can be maintained even for a circuit device having electrodes formed at a small pitch of 120 m or less. This can be reliably achieved, and even when a large number of circuit devices are inspected, highly reliable inspections can be performed over a long period of time.
• FIG. 1 is a view showing another embodiment of the sheet-like probe of the present invention.
• FIG. 1 (a) is a plan view, and FIG. FIG.
• FIG. 2 is an enlarged plan view showing a contact film in the sheet-like probe of FIG. 1.
• FIG. 3 is an explanatory sectional view showing a structure of a sheet-like probe according to the present invention.
• FIG. 4 is an explanatory cross-sectional view showing, in an enlarged manner, an electrode structure of a sheet-like probe according to the present invention.
• FIG. 5 (a) is a cross-sectional view of a support portion of a contact film in a sheet-like probe of the present invention
• FIG. 5 (b) uses a plate-like metal frame plate as a metal frame plate to form an insulating layer.
• FIG. 4 is a cross-sectional view showing a case where the support is performed on a surface.
• FIG. 6 is a view showing another embodiment of the sheet-like probe of the present invention.
• FIG. 6 (a) is a plan view
• FIG. 6 (b) is a cross-sectional view taken along line XX. .
• FIG. 7 is an explanatory sectional view showing a structure of a sheet-like probe according to the present invention.
• FIG. 8 is an enlarged cross-sectional view illustrating an electrode structure of a sheet-like probe according to the present invention.
• FIG. 9 is a partially enlarged cross-sectional view of the sheet probe of FIG. 1.
• FIG. 10 is a cross-sectional view showing another embodiment of the sheet probe of the present invention.
• FIG. 11 is a cross-sectional view showing another embodiment of the sheet probe of the present invention.
• FIG. 12 is an explanatory cross-sectional view showing a configuration of a laminate for manufacturing a sheet-like probe according to the present invention.
• FIG. 13 is an explanatory cross-sectional view showing a configuration of a laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 14 is an explanatory cross-sectional view showing a configuration of a laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 15 is an explanatory cross-sectional view showing a configuration of a laminate for manufacturing a sheet-like probe according to the present invention.
• FIG. 16 is an explanatory cross-sectional view showing a configuration of a laminate for manufacturing a sheet-like probe according to the present invention.
• FIG. 17 is an explanatory cross-sectional view showing a configuration of a laminate for manufacturing the sheet probe according to the present invention.
• FIG. 18 is an explanatory cross-sectional view showing a configuration of a laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 19 is another configuration of a laminated body for manufacturing the sheet probe according to the present invention. It is explanatory sectional drawing which shows.
• FIG. 20 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 21 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 22 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 23 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 24 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 25 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 26 is a view showing another embodiment of the sheet-shaped probe of the present invention, FIG. 26 (a) is a plan view, and FIG. 26 (b) is a cross-sectional view taken along line X-X. .
• FIG. 27 is a view showing another embodiment of the sheet-shaped probe of the present invention
• FIG. 27 (a) is a plan view
• FIG. 27 (b) is a cross-sectional view taken along line X-X. .
• FIG. 28 is a view showing another embodiment of the sheet-shaped probe of the present invention.
• FIG. 28 (a) is a plan view
• FIG. 28 (b) is a cross-sectional view taken along line XX. .
• FIG. 29 (a) is a top view illustrating a metal frame plate 24 used in the method of manufacturing a sheet probe according to the embodiment of the present invention
• FIG. 29 (b) is a plan view of the sheet probe according to the embodiment.
• FIG. 4 is a cross-sectional view of a metal frame plate 24 used in the manufacturing method.
• FIG. 30 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 31 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 32 is an explanatory cross-sectional view showing another configuration of the laminate for manufacturing the sheet-like probe according to the present invention.
• FIG. 33 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet-like probe according to the present invention.
• FIG. 34 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 35 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet probe according to the present invention.
• FIG. 36 is an explanatory cross-sectional view showing another configuration of the laminated body for manufacturing the sheet-like probe according to the present invention.
• FIG. 37 is a cross-sectional view showing an embodiment of a circuit device inspection apparatus of the present invention and a probe force used therein.
• FIG. 38 is a cross-sectional view showing another embodiment of the circuit device inspection device and the probe force used therein according to the present invention.
• FIG. 39 is a cross-sectional view showing the probe card of FIG. 38 before and after assembly.
• FIG. 40 is an explanatory cross-sectional view showing, in an enlarged manner, a probe card in the inspection device shown in FIG. 38.
• FIG. 41 is an explanatory cross-sectional view showing a probe card in the inspection device shown in FIG. 39 in an enlarged manner.
• FIG. 42 is a plan view of the anisotropic conductive connector in the probe card shown in FIGS. 40 and 38.
• FIG. 43 is a plan view showing a test wafer manufactured in an example.
• FIG. 44 is an explanatory diagram showing the positions of the electrodes to be inspected of the integrated circuit formed on the test wafer shown in FIG.
• FIG. 45 is an explanatory diagram showing an arrangement pattern of electrodes to be inspected of an integrated circuit formed on the test wafer shown in FIG. 44.
• FIG. 46 is a plan view showing a frame plate in the anisotropic conductive connector manufactured in the example.
• FIG. 47 is an explanatory diagram showing a part of the frame plate shown in FIG. 46 in an enlarged manner.
• FIG. 48 is a plan view illustrating a shape of a metal frame plate of the sheet-shaped probe of the present invention.
• FIG. 49 is an explanatory cross-sectional view showing a configuration of an example of a conventional probe card.
• FIG. 50 is an explanatory cross-sectional view showing an example of manufacturing a conventional sheet-like probe.
• FIG. 51 is an explanatory cross-sectional view showing, in an enlarged manner, a sheet-like probe in the probe card shown in FIG. 50.
• FIG. 52 is an explanatory cross-sectional view showing another example of manufacturing a conventional sheet-like probe.
• FIG. 53 is an explanatory cross-sectional view showing another example of manufacturing a conventional sheet-like probe.
• FIG. 54 is a cross-sectional view of a conventional sheet probe using a ring-shaped support plate.
• FIG. 55 is a cross-sectional view schematically showing a conventional method for manufacturing a sheet-like probe.
• FIG. 56 is a cross-sectional view illustrating a method of manufacturing the sheet-shaped probe of Comparative Example 1. Explanation of symbols
• FIG. 1 is a diagram showing another embodiment of the sheet-shaped probe of the present invention, wherein FIG. 1 (a) is a plan view, FIG. 1 (b) is a cross-sectional view taken along line X-X, and FIG. FIG. 3 is an enlarged plan view showing a contact film of the sheet-like probe in FIG. 1, FIG. 3 is a cross-sectional view for explaining the structure of the sheet-like probe according to the present invention, and FIG. 4 is a sheet-like probe according to the present invention.
• FIG. 2 is an explanatory cross-sectional view showing the electrode structure of FIG.
• the sheet probe 10 of the present embodiment is used to conduct an electrical inspection of each integrated circuit in a wafer state on an 8-inch wafer or the like on which a plurality of integrated circuits are formed. As shown in FIG. 1 (a), the sheet probe 10 has a metal frame plate 25 having through holes formed at respective positions corresponding to respective integrated circuits on a wafer to be inspected. Contact film 9 is arranged in the through hole.
• the contact film 9 is supported by the metal frame plate 25 at a support portion 22 around the through hole of the metal frame plate 25.
• a contact film 9 made of an insulating film is formed on a metal frame plate 25, and the contact film 9 is supported by the metal frame plate 25.
• the contact film 9 has a structure in which the electrode structure 15 is formed through a flexible insulating layer 18B.
• the plurality of electrode structures 15 extending in the thickness direction of the insulating layer 18B are arranged apart from each other in the surface direction of the insulating layer 18B according to the pattern corresponding to the electrode to be inspected of the wafer to be inspected.
• each of the electrode structures 15 is exposed on the surface of the insulating layer 18B, and the surface force of the insulating layer 18B.
• a rectangular flat back electrode portion 17 exposed on the back surface of the insulating layer 18B extends from the base end of the front electrode portion 16 continuously through the insulating layer 18B in the thickness direction thereof and is connected to the back electrode portion 17.
• the peripheral surface force of the short-circuited portion 18 and the base end portion of the surface electrode portion 16 also continuously extends outward along the surface of the insulating layer 18B.
• a circular ring plate-shaped holding portion 19 extending radially.
• the surface electrode portion 16 is tapered so as to have a smaller diameter toward the base force and the distal end following the short-circuit portion 18, and the whole is formed in a truncated cone shape.
• the short-circuit portion 18 continuous with the base end of the front electrode portion 16 is tapered so that the back surface force of the insulating layer 18B also becomes smaller in diameter according to the front surface force.
• the diameter R1 of the base end of the surface electrode portion 16 is larger than the diameter R3 of one end of the short-circuit portion 18 continuous with the base end.
• the insulating layer 18B is not particularly limited as long as it is flexible and has insulating properties.
• Examples of the insulating layer 18B include a resin sheet made of polyimide resin, liquid crystal polymer, polyester, and fluorine resin, and a cloth woven fiber.
• the above-mentioned resin-impregnated sheet or the like can be used.
• the through-hole for forming the short-circuit portion 18 can be easily formed by etching, and is preferably made of an etchable material. Particularly, polyimide is preferable.
• the thickness d of the insulating layer 18B is not particularly limited as long as the insulating layer 18B is flexible, but is preferably 5 to 100 / ⁇ , more preferably 10 to 50 / 50 ⁇ . ⁇ ⁇ .
• the metal frame plate 25 is provided integrally with the insulating layer 18B, and may be provided on the surface of the insulating layer 18B in a state of being laminated with the insulating layer 18B, and may be included as an intermediate layer in the insulating layer 18B. .
• the metal frame plate 25 is disposed apart from the electrode structure 15, and the electrode structure 15 and the metal frame plate 25 are connected by the insulating layer 18B.
• the frame plate 25 is electrically insulated.
• the metal frame plate 25 is formed by removing a part of the second back side metal layer 17A.
• the second backside metal layer 17A As a metal constituting the second backside metal layer 17A to be the metal frame plate 25, a force that can use iron, copper, nickel, titanium, or an alloy or alloy steel thereof is used in the manufacturing method described below. Since the second backside metal layer 17A can be easily separated and divided into a metal frame plate 25 and a backside electrode portion 17 by etching, it is possible to use 42 alloy, invar, kovar and other iron-nickel alloy steel, copper, nickel, and the like. Alloys are preferred! /.
• those coefficient of linear thermal expansion is less than 3 X 10- 5 ⁇ Used it is preferred instrument more preferably an 1 X 10- 7 ⁇ ⁇ ⁇ - 5 ⁇ , particularly preferably one IX
• Specific examples of the material forming such a metal frame plate 25 include an invar alloy such as invar, an elinvar alloy such as elinvar, sono-inno, cono-nore, and so on.
• Alloys such as two alloys or alloy steels are exemplified.
• the thickness of the metal frame plate 25 is preferably 3 to 150 ⁇ m, more preferably 5 to 150 ⁇ m.
• the metal frame plate supporting the sheet-like probe may not have sufficient strength.
• the thickness is excessively large, it may be difficult to separate and divide the second backside metal layer 17A into the metal frame plate 25 and the backside electrode portion 17 by etching in the manufacturing method described below. is there.
• the insulating sheet may be separated into a large number of contact films 9 and supported on the metal frame plate 25 by etching or the like.
• the flexible contact films 9 holding the electrode structures 15 in the respective openings 26 of the metal frame plate 25 are independent of each other (FIG. 10 (a)) and partially independent (FIG. 10 (b)). )).
• Each of the contact films 9 has a flexible insulating layer 18B as shown in FIGS. 10 (a) and 10 (b), and the insulating layer 18B extends in the thickness direction of the insulating layer 18B.
• a plurality of metal electrode structures 15 are spaced apart from each other in the surface direction of the insulating layer 18B in accordance with a pattern corresponding to the pattern of the electrode to be inspected in the electrode region of the wafer to be inspected. 9 is arranged so as to be located in the opening of the metal frame plate 25.
• the electrode structure 15 As a metal constituting the electrode structure 15, nickel, copper, gold, silver, noradium, iron, or the like can be used, and the electrode structure 15 is entirely made of a single metal.
• the surface electrode portion 16 and the short-circuit portion 18 may be made of different metals, even if they are made of an alloy of two or more kinds of metals or are made of a laminate of two or more kinds of metals.
• the ratio (R2 / R1) of the diameter R2 at the distal end to the diameter R1 at the proximal end of the surface electrode portion 16 is preferably 0.11 to 0.9. Preferably it is 0.15 to 0.6.
• the arrangement pitch of the electrode structure 15 should be 40 to 120 ⁇ m, preferably a force of 40 to 160 ⁇ m, which is the same as the pitch of the electrodes to be inspected of the circuit device to be connected. In particular, it is more preferably 40 to 100 m.
• Circuit devices to be connected by satisfying such conditions are those having small and minute electrodes with a pitch of 120 m or less and those having extremely small electrodes with a pitch of 100 m or less. Even so, a stable electrical connection state to the circuit device can be reliably obtained.
• the diameter R1 of the base end of the surface electrode portion 16 is preferably 30 to 70% of the pitch of the electrode structure 15, more preferably 35 to 60%.
• the ratio hZRl of the protruding height h to the diameter R1 at the base end of the surface electrode portion 16 is preferably 0.2 to 0.8, more preferably 0.25 to 0.6.
• the circuit device to be connected can be a device having small and minute electrodes with a pitch of 120 m or less, or a device having extremely small electrodes with a pitch of 100 m or less. Even so, the electrode structure 15 having a pattern corresponding to the electrode pattern can be easily formed, and a stable electrical connection state to the circuit device can be more reliably obtained.
• the diameter R1 of the base end of the surface electrode portion 16 is a force set in consideration of the above conditions, the diameter of the electrode to be connected, and the like, for example, 30 to 80 ⁇ m, and preferably 30 to 60 ⁇ m. m.
• the height of the projecting height h of the surface electrode portion 16 is preferably 12 to 50 / ⁇ from the viewpoint that stable electrical connection to the electrode to be connected can be achieved. Is 15 to 30 ⁇ m.
• the outer diameter R5 of the back electrode portion 17 is larger than the diameter R4 of the back surface side of the insulating layer 18B of the short-circuit portion 18 connected to the back electrode portion 17 and smaller than the pitch of the electrode structure 15. However, it is preferable that the sheet is as large as possible, so that a stable electrical connection can be reliably achieved even for an anisotropic conductive sheet, for example.
• the thickness d2 of the back electrode 17 is preferably 10 to 80 m, more preferably 12 to 60 m, from the viewpoint that the strength is sufficiently high and excellent repetition durability is obtained. is there.
• the ratio R3ZR4 of the diameter R3 on the front surface side of the insulating layer 18B to the diameter R4 on the back surface side of the insulating layer 18B of the short-circuit portion 18 is preferably 0.2 to 1, more preferably 0.2 to 1. 3 to 0.9.
• the diameter R3 of the short-circuit portion 18 on the surface side of the insulating layer 18B is equal to 10
• Preferably it is ⁇ ⁇ ⁇ 50%, more preferably 15-45%.
• the diameter R6 of the holding portion 19 is preferably 30 to 70% of the pitch of the electrode structure 15, and more preferably 40 to 60%.
• the thickness dl of the holding portion 19 is preferably 3 to 50 ⁇ m, more preferably 4 to 4 ⁇ m.
• the metal frame plate 25 and the back surface electrode portion 17 may also be formed of different metal members.
• the metal frame plate 25 is formed of a metal material in which the plurality of through holes 12 are formed by, for example, punching, laser welding, or the like.
• the back electrode portion 17 is subjected to electrolytic plating to form the short-circuit portion forming recesses 18K and the resist film.
• Each of the pattern holes 29H of 29A is made of a metal material formed as the back surface electrode portion 17 by filling the inside with metal.
• the metal frame plate 24 and the back electrode 17 are made of different metal members, there are no restrictions on the type of metal, thickness, and the like of the metal frame plate 24.
• the metal frame plate 24 can be formed of any metal type and any thickness in consideration of availability and the like.
• the back electrode portion 17 has a metal member force different from that of the metal frame plate 24, the back electrode portion 17 is not limited to the metal as the metal frame plate 24, and is preferably a metal, For example, copper or the like having excellent electrical characteristics can be used as a constituent metal of the back electrode 17.
• the constituent metal of the metal member forming the metal frame plate 24 and the constituent metal of the metal member forming the back electrode portion 17 may be formed of constituent metals of different metal types! .
• constituent metal of the metal member forming the metal frame plate 24 and the constituent metal of the metal member forming the back electrode portion 17 may be formed of the same metal type!
• a plate-like ring-shaped support member 2 having rigidity is provided on the periphery of the sheet probe 10.
• the material of the support member 2 include invar type alloys such as invar and super invar, elinvar type alloys such as elinvar, low thermal expansion metal materials such as kovar and 42 alloy, and ceramic materials such as alumina, silicon carbide and silicon nitride.
• the thickness of the support member 2 is preferably 2 mm or more.
• the thickness of the ring-shaped support member 2 in such a range, the influence of the difference in the coefficient of thermal expansion between the metal frame plate 25 and the ring-shaped support member 2, that is, the electrode structure due to the temperature change The displacement between the body and the electrode to be inspected can be further suppressed.
• the sheet-like probe 10 By supporting the sheet-like probe 10 with such rigidity by such a support member 2, in the probe card described later, for example, a hole formed in the support member 2 and a guide pin provided in the probe card are provided.
• the electrode provided on the contact film 9 of the sheet-like probe 10 by engaging the support member 2 or by fitting the support member 2 and a circumferential step provided on the peripheral portion of the probe force card.
• the structure 15 can be easily aligned with the electrode to be inspected of the object to be inspected or the conductive portion of the anisotropic conductive connector, and can be attached to the object to be inspected even when it is used for repeated inspection. The displacement of the electrode structure 15 from a predetermined position can be reliably prevented.
• FIG. 5B in addition to the structure in which the insulating layer 18B is supported by the metal frame plate 25, as shown in FIG. Alternatively, a structure having a metal frame plate 24 in the insulating layer 18B is also possible, and this structure is as shown in FIGS.
• the sheet probe 10 has a metal frame plate 24 having through holes formed at respective positions corresponding to the respective integrated circuits on the wafer to be inspected.
• the contact film 9 is disposed.
• the contact film 9 is supported by the metal frame plate 24 at the support portion 22 around the through hole of the metal frame plate 24.
• the support portion 22 is sandwiched between the metal frame plates 24 by a resin insulating layer 18B. It is supported in a state where it is closed.
• the flexible contact films 9 holding the electrode structures 15 in the respective openings of the contact film are independent of each other (FIG. 11 (a)), and partially independent of each other. They may be arranged in a state (FIG. 11 (b)).
• the metal frame plate 24 is bonded and fixed to the support member 2 via the adhesive 8.
• Examples of the material of the ring-shaped support member 2 include invar type alloys such as invar and super invar, elinvar type alloys such as elinvar, low thermal expansion metal materials such as kovar and 42 alloy, alumina, silicon carbide, silicon nitride and the like. Ceramic materials.
• the sheet-like probe 10 By supporting the sheet-like probe 10 with such rigidity by such a supporting member 2, in the probe card described later, for example, a hole formed in a frame plate and a guide pin provided in the probe card are linked.
• the electrode structure 15 provided on the contact film 9 of the sheet-shaped probe 10 is formed by fitting the support member 2 and the circumferential step provided on the peripheral edge of the probe card. Can easily be aligned with the electrode to be inspected of the object to be inspected ⁇ the conductive portion of the anisotropic conductive connector.
• stainless steel and aluminum may be used as the metal that forms the mesh that can be used as the metal frame plate 24, for example.
• Such a sheet-like probe 10 having a structure in which the metal frame plate 24 is provided in the insulating layer 18B.
• the strength of the supporting portion of the contact film 9 is such that the metal frame plate 24 is sandwiched between the insulating layers 18B. High electrical and repetitive durability can be obtained in the electrical inspection using the device.
• the thermal expansion coefficients of the insulating layer 18B, the metal frame plate 25 (including the metal frame plate 24 described later), and the ring-shaped support member 2 are as follows. By controlling to such conditions, the displacement between the electrode structure and the electrode to be inspected due to a temperature change can be suppressed!
• the coefficient of linear thermal expansion of the metal frame plate 25 is H2
• condition (2): H2ZH1 is preferably less than 0.5, particularly preferably less than 0.3.
• H3ZH1 is particularly preferably less than 0.5, and more preferably less than 0.3.
• the coefficient of linear thermal expansion of the metal frame plate 25 is ⁇ 2
• the electric current due to the temperature change is obtained.
• the displacement between the polar structure and the electrode to be inspected can be suppressed.
• separation of the support portion 22 between the insulating film 9 and the metal frame plate 25 and separation of the bonding surface between the support member 2 and the metal frame 25 can be suppressed.
• the combination of the material of the insulating layer 18B, the metal frame plate 25, and the material of the ring-shaped support member 2 is good as long as the conditions (1) to (4) are satisfied. There is no particular limitation.
• a material having the following coefficient of linear thermal expansion ie, a material having the following coefficient of linear thermal expansion, ie, a material having the following coefficient of linear thermal expansion, ie, a material having the following coefficient of linear thermal expansion, ie, a material having the following coefficient of linear thermal expansion, ie, a material having the following coefficient of linear thermal expansion, ie, a material having the following coefficient of linear thermal expansion, ie, a material having the following coefficient of linear thermal expansion, ie,
• Polyimide about 5 X 10- 5 ⁇
• Invar alloy 1. 2 ⁇ 10 " 6 / ⁇
• Silicon nitride 3.5X10VK
• Silicon carbide 4X 10— 6 ⁇
• Invar alloy 1. 2 ⁇ 10 " 6 / ⁇
• the linear thermal expansion coefficient HI of the insulating layer 18B, the linear thermal expansion coefficient H2 of the metal frame plate 25, and the linear thermal expansion coefficient H3 of the ring-shaped support member 2 are determined by the above-described conditions (1
• the coefficient of thermal expansion between these members so as to satisfy (4) to (4), the effect of the difference in the coefficient of thermal expansion between these members, that is, the electrode structure and the electrode to be inspected due to temperature changes. Can be suppressed.
• peeling of the support portion 22 between the insulating film 9 and the metal frame plate 25 and peeling of the bonding surface between the support member 2 and the metal frame 25 can be suppressed. Wear.
• the linear thermal expansion coefficient H2 force of the metal frame plate 25 is as follows:
• Condition (5): H2 - 1 X 10- 7 is preferable to set so as to satisfy the ⁇ 2 X 10- 5 ZK,.
• the coefficient of thermal expansion between these members can be reduced, so that the insulating layer 18B
• the influence of the difference in the coefficient of thermal expansion between the metal frame plate 25 and the ring-shaped support member 2, that is, the displacement between the electrode structure and the electrode to be inspected due to a temperature change can be further suppressed.
• the separation of the support portion 22 between the insulating film 9 and the metal frame plate 25 and the separation of the bonding surface between the support member 2 and the metal frame 25 can be further suppressed.
• the linear thermal expansion coefficient ⁇ 3 of the ring-shaped support member 2 satisfies the following condition (6):
• the thermal expansion coefficient of the ring-shaped support member ⁇ 3 is set by setting the coefficient of thermal expansion between these members so as to satisfy the above condition (6).
• the influence due to the difference in the coefficient of thermal expansion between the layer 18B, the metal frame plate 25, and the ring-shaped support member 2, that is, the displacement between the electrode structure and the electrode to be inspected due to a temperature change can be further suppressed.
• peeling of the supporting portion 22 between the insulating film 9 and the metal frame plate 25 and peeling of the bonding surface between the supporting member 2 and the metal frame 25 can be further suppressed.
• a method of supporting the insulating layer 18B may be appropriately selected in consideration of manufacturing costs and the like.
• these sheet-shaped probes 10 are provided with a metal frame plate 25 for supporting the insulating layer 18B and a ring-shaped support member 2 on an outer edge portion of the metal frame plate 24 at the time of wafer inspection. Can be performed favorably.
• a resin having flexibility is used as the insulating layer 18B of the present invention.
• the material for forming the insulating layer 18B is not particularly limited as long as it is a resin material having electrical insulation properties. Examples include, but are not limited to, polyimide resins, liquid crystal polymers, and composite materials thereof.
• etchable polymer material As a material for forming the insulating layer 18B, it is preferable to use an etchable polymer material, and more preferably, polyimide.
• a photosensitive polyimide solution a polyimide precursor solution, a liquid polyimide or varnish obtained by diluting a polyimide precursor or a low-molecular-weight polyimide with a solvent,
• thermoplastic polyimide (2) thermoplastic polyimide
• Etc. can be used.
• the photosensitive polyimide solution, the polyimide precursor solution, and the liquid polyimide or varnish obtained by diluting the polyimide precursor or low-molecular-weight polyimide with a solvent described in (1) above are solution-coated because of their low viscosity. It can be cured (polymerized) after application, so that it is accompanied by volume shrinkage due to evaporation and polymerization of the solvent.
• a polyimide precursor solution, a polyimide precursor or a liquid polyimide or varnish obtained by diluting a low-molecular-weight polyimide with a solvent as described in (1) above are added to the laminate 10A. It is preferable to form the insulating layer 18B by coating and curing.
• thermoplastic polyimide of the above (2) In the thermoplastic polyimide of the above (2),
• the solvent is evaporated to form an insulating layer 18B, or
• the laminated body 10A is integrated, the insulating layer 18B and the method,
• the polyimide film of the above (3) is stable without being dissolved in heat or solvent, when such a polyimide film is used,
• the insulating layer 18B can be formed.
• the electrode structure 15 is formed with the holding portion 19 in which the base partial force of the surface electrode portion 16 also extends continuously along the surface of the insulating layer 18B. Therefore, even if the diameter of the front surface electrode portion 16 is small, since the holding portion 19 is supported on the surface of the insulating layer 18B, the electrode structure 15 also releases the rear surface force of the insulating layer 18B. High without dropping! Durability is obtained.
• FIG. 1 A laminate 10A comprising a front-side metal layer 16A formed on the front surface of the insulating sheet 11 and a first back-side metal layer 19A formed on the back surface of the insulating sheet 11 is prepared.
• the total thickness of the thickness of the insulating sheet 11 and the thickness of the first backside metal layer 19A is equal to the protruding height of the surface electrode portion 16 in the electrode structure 15 to be formed. It is assumed to be.
• the material of the insulating sheet 11 is not particularly limited as long as it is flexible and has insulating properties.
• it is made of polyimide resin, liquid crystal polymer, polyester, fluorine resin, or the like.
• a resin sheet, a sheet in which the above-mentioned resin is impregnated into a fiber-knitted cloth, or the like can be used.
• a through hole for forming the surface electrode portion 16 can be easily formed by etching.
• the thickness of the insulating sheet 11 is not particularly limited as long as the insulating sheet 11 is flexible, but is preferably 10 to 50 Pm, more preferably 10 to 25 Pm. is there.
• a laminated polyimide sheet having a metal layer made of, for example, copper laminated on both surfaces, which is generally commercially available, can be used.
• a protective film 40A is laminated on the entire surface of the front-side metal layer 16A, and a surface of the first rear-side metal layer 19A is formed on the laminate 10A as shown in FIG.
• An etching resist film 12A in which a plurality of pattern holes 12H are formed is formed according to a pattern corresponding to the pattern of the electrode structure 15 to be formed.
• a material for forming the resist film 12A various materials used as a photoresist for etching can be used.
• the exposed portion of the insulating sheet 11 through the respective pattern holes 12H of the resist film 12A and the respective pattern holes 19H of the first backside metal layer 19A is subjected to an etching treatment, so that the portion is exposed.
• the insulating sheet 11 is connected to the pattern holes 19H of the first backside metal layer 19A, respectively, from the back surface to the front surface of the insulating sheet 11, respectively.
• a plurality of tapered through holes 11H with a smaller diameter are formed toward
• a plurality of recesses 10K for forming a surface electrode portion in which the pattern hole 19H of the first back side metal layer 19A and the through hole 11H of the insulating sheet 11 are communicated with the back surface of the laminate 10A, respectively. Is formed.
• an etching agent for etching the first backside metal layer 19A is appropriately selected according to the material constituting these metal layers, and the metal layer is made of, for example, copper.
• an aqueous solution of ferric Shiojiri can be used.
• an amine-based etchant may be used as an etchant for etching the insulating sheet 11.
• An etching solution, a hydrazine-based aqueous solution, a potassium hydroxide aqueous solution, or the like can be used as an etchant for etching the insulating sheet 11.
• the insulating sheet 11 has a tapered through-hole having a smaller diameter from the back surface to the surface. 11H can be formed.
• the resist film 12A is removed from the laminated body 10A on which the recesses 10K for forming the surface electrode portions are formed as described above, and thereafter, as shown in FIG.
• a resist film 13A for plating is formed in which a plurality of pattern holes 13H are formed in accordance with a pattern corresponding to the pattern of the holding portion 19 in the electrode structure 15 to be formed.
• the material for forming the resist film 13A various materials used as a photoresist for plating can be used, but a photosensitive dry film resist is preferred! /
• the laminated body 10A is subjected to electrolytic plating using the surface-side metal layer 16A as an electrode to deposit a metal in each of the recesses 10K for forming surface electrode portions and in each pattern hole 13H of the resist film 13A.
• the plurality of surface electrode portions 16 and the holding portions 19 extending outward along the back surface of the insulating sheet 11 continuously to the base ends of each of the surface electrode portions 16 are formed. Is formed.
• each of the holding portions 19 is in a state of being connected to each other via the first backside metal layer 19A.
• the insulating layer 18B is formed on the laminate 10A on which the surface electrode portion 16 and the holding portion 19 are formed so as to cover the first backside metal layer 19A and the holding portion 19 as shown in FIG. Is formed, and a second backside metal layer 17A is formed on the surface of the insulating layer 18B to form a laminate 10B.
• etchable polymer material As a material for forming the insulating layer 18B, it is preferable to use an etchable polymer material, and more preferably, polyimide.
• etchable polymer material As a material constituting the insulating layer 18B, it is preferable to use an etchable polymer material, and more preferably, polyimide.
• thermoplastic polyimide (1) a photosensitive polyimide solution, a polyimide precursor solution, a liquid polyimide or varnish obtained by diluting a polyimide precursor or a low-molecular-weight polyimide with a solvent, (2) thermoplastic polyimide,
• Etc. can be used.
• the photosensitive polyimide solution, the polyimide precursor solution, the liquid polyimide or varnish obtained by diluting the polyimide precursor or low-molecular-weight polyimide with a solvent described in (1) above are solution-coated because of their low viscosity. It can be cured (polymerized) after application, so that it is accompanied by volume shrinkage due to evaporation and polymerization of the solvent.
• a polyimide precursor solution, a polyimide precursor or a liquid polyimide or varnish obtained by diluting a low-molecular-weight polyimide with a solvent as described in (1) above are added to the laminate 10A. It is preferable to form the insulating layer 18B by coating and curing.
• thermoplastic polyimide of the above (2) In the thermoplastic polyimide of the above (2),
• the solvent is evaporated to form an insulating layer 18B, or
• the laminated body 10A is integrated, the insulating layer 18B and the method,
• the polyimide film of the above (3) is stable without being dissolved in heat or solvent, when such a polyimide film is used,
• a solution of the photosensitive polyimide of (1), a solution of polyimide precursor, a liquid polyimide or varnish obtained by diluting the polyimide precursor or low-molecular-weight polyimide with a solvent is used.
• the insulating layer 18B can be formed.
• the second back side metal layer 17A has a thickness equal to the thickness of the metal frame plate 25 to be formed.
• a plurality of patterns are formed on the surface of the second back-side metal layer 17A according to the pattern corresponding to the pattern of the electrode structure 15 to be formed on the laminate 10B.
• An etching resist film 28A in which the turn holes 28H are formed is formed.
• various materials used as a photoresist for etching can be used.
• the second back side metal layer 17A is etched to remove the portion exposed through the pattern hole 28H of the resist film 28A, thereby removing the portion, as shown in FIG. 14 (c).
• a plurality of pattern holes 17H communicating with the pattern holes 28H of the resist film 28A are formed in the second backside metal layer 17A.
• portions of the insulating layer 18B exposed through the respective pattern holes 28H of the resist film 28A and the respective through holes 17H of the second backside metal layer 17A are subjected to an etching treatment to remove the portions.
• the insulating layer 18B communicates with the pattern hole 19H of the first backside metal layer 19A, and has a smaller diameter from the back surface to the front surface of the insulating layer 18B, and the front surface has A plurality of tapered through holes 18H with the electrode portions 16 exposed are formed.
• a plurality of short-circuit-portion-forming recesses 18K formed by communicating the pattern holes 17H of the second rear-surface-side metal layer 17A and the through holes 18H of the insulating layer 18B on the back surface of the laminate 10B. It is formed.
• an etching agent for etching the second backside metal layer 17A is appropriately selected according to the material constituting these metal layers.
• the etching solution used for etching the insulating sheet 11 can be used as an etching solution for etching the insulating layer 18B.
• the resist film 28A is removed from the laminate 10B in which the short-circuit-portion-forming recess 18K is formed as described above, and then, as shown in FIG. 15 (b), the laminate 10B is provided with the second back surface.
• the surface of the side metal layer 17A corresponds to the pattern of the back electrode portion 17 in the electrode structure 15 to be formed.
• a plating resist film 29A in which a plurality of pattern holes 29H are formed according to the pattern is formed.
• the resist film 29A As a material for forming the resist film 29A, various materials used as a photoresist for plating can be used, but a dry film resist is preferable!
• the laminated body 10B is subjected to electrolytic plating using the surface-side metal layer 16A as an electrode to fill the metal into each short-circuit-portion forming recess 18K and each pattern hole 29H of the resist film 29A.
• the short-circuit portion 18 which extends continuously through the base end of the front electrode portion 16 in the thickness direction thereof and is connected to the back surface side of the insulating layer 18B of each short-circuit portion 18.
• the back electrode portion 17 is formed.
• each of the back surface electrode portions 17 is in a state of being connected to each other via the second back surface side metal layer 17A.
• the resist film 29A is also removed from the laminate 10B on which the front electrode section 16, the holding section 19, the short-circuit section 18 and the back electrode section 17 are formed, and thereafter, the back electrode section as shown in FIG.
• An etching resist film 29B is formed.
• various materials used as a photoresist for etching can be used.
• the protective film 40A provided on the front-side metal layer 16A is removed, and the front-side metal layer 16A and the second back-side metal layer 17A are subjected to an etching treatment, whereby the structure shown in FIG. 16B is obtained.
• the front-side metal layer 16A is removed, and the portion of the second back-side metal layer 17A exposed by the pattern hole 29K is removed to form an opening 26.
• the back electrode portion 17 and the metal frame plate 25 are formed.
• the resist film 17E is covered so as to cover the back electrode 17, the metal frame plate 25, and the opening 26.
• a material for forming the resist film 17E various materials used as a photoresist for etching can be used. Then, a protective film 40B is laminated on the entire surface of the resist film 17E.
• the insulating sheet 11 was subjected to an etching treatment to remove the entirety thereof.
• a patterned resist film 14A for etching is formed so as to cover a portion to be the holding portion 19 in 9A.
• the exposed portion is removed by performing an etching process on the first backside metal layer 19A, and as shown in Fig. 17 (c), the outer surface of the base end portion of the surface electrode portion 16 is removed.
• the holding portion 19 is formed to extend radially outward along the surface of the insulating layer 18B continuously, so that the electrode structure 15 is formed.
• the resist film 14A is removed, and a resist film 17F is formed on the upper surface of the laminate 10C so as to expose a part of the metal frame plate 25.
• the insulation layer 18B is etched to form a metal frame plate as shown in FIG. 17 (e).
• the resist film 17F is removed from the surface of the insulating layer 18B, and the protective film 40B and the resist film 17E are removed from the back surface and the back electrode portion 17 of the insulating layer 18B.
• the sheet-like probe 10 shown in FIG. 18 is obtained.
• FIG. 12 (a) to FIG. 13 (c) are based on the method of manufacturing the sheet probe 10 having the structure in which the insulating layer 18B is supported by the metal frame plate 25. In the same manner, a laminated body 10A was obtained.
• FIG. 19 (a) the resist film 13A was removed, and as shown in FIG. 19 (b), the holding portion 19 was formed on the first backside electrode layer 19A.
• An insulating layer 18B was formed to cover.
• a plurality of through holes 12 are formed at each position corresponding to each integrated circuit on the wafer to be inspected, for example, by punching, laser processing, etching, or the like.
• a metal frame plate 24 formed by processing or the like is prepared.
• the holding portion 19 is covered on the first back side electrode layer 19A.
• the metal frame plate 24 was laminated on the formed insulating layer 18B.
• the upper force of the metal frame plate 24 was again formed by forming the insulating layer 18B again, thereby obtaining a laminate 10B in which the metal frame plate 24 was formed in the insulating layer 18B.
• a second back side metal layer 17A is formed on such an insulating layer 18B, and then, as shown in FIG. 20 (c).
• a resist film 28A for etching having a plurality of pattern holes 28H formed in accordance with a pattern corresponding to the pattern of the electrode structure 15 to be formed is formed on the laminate 10A. I do.
• the material for forming the resist film 28A various materials used as a photoresist for etching can be used.
• the second back side metal layer 17A is etched to remove the portion exposed through the pattern hole 28H of the resist film 28A, thereby removing the portion, as shown in FIG. 21 (a).
• a plurality of pattern holes 17H communicating with the pattern holes 28H of the resist film 28A are formed in the second backside metal layer 17A.
• portions of the insulating layer 18B exposed through the respective pattern holes 28H of the resist film 28A and the respective through holes 17H of the second backside metal layer 17A are subjected to etching to remove the portions.
• the diameter of the insulating layer 18B decreases from the back surface to the front surface of the insulating layer 18B, which communicates with the pattern hole 19H of the first back metal layer 19A.
• a plurality of tapered through holes 18H are formed on the bottom surface where the surface electrode portion 16 is exposed.
• a plurality of short-circuit portion forming recesses 18 K formed by communicating the pattern holes 17H of the second rear-surface-side metal layer 17A and the through holes 18H of the insulating layer 18B are formed on the rear surface of the laminate 10B. It is formed.
• an etching agent for etching the second backside metal layer 17A can be appropriately selected according to the material constituting these metal layers.
• an etching solution for etching the insulating layer 18B the etching solution used for etching the insulating sheet 11 can be used.
• the resist film 28A is removed from the laminated body 10B in which the short-circuit-portion-forming recess 18K is formed as described above, and then, as shown in FIG.
• a mask resist film 29A having a plurality of pattern holes 29H formed in accordance with a pattern corresponding to the pattern of the back electrode portion 17 in the electrode structure 15 to be formed is formed.
• the laminated body 10B is subjected to electrolytic plating using the surface-side metal layer 16A as an electrode to fill the metal into each short-circuit-portion forming recess 18K and each pattern hole 29H of the resist film 29A.
• the short-circuit portion 18 which extends continuously through the base electrode of the surface electrode portion 16 in the thickness direction thereof and is connected to the back surface side of the insulating layer 18B of each short-circuit portion 18.
• the back electrode portion 17 was formed.
• each of the back surface electrode portions 17 is in a state of being connected to each other via the second back surface side metal layer 17A.
• the resist 10A is also removed by the laminate 10B formed with the front electrode portion 16, the short-circuit portion 18 and the back electrode portion 17, and thereafter, as shown in FIG. 22 (c). As shown, a patterned etching resist film 29B was formed on the back electrode portion 17.
• the material for forming the resist film 29B various materials used as a photoresist for etching can be used.
• a resist layer 29C is formed so as to cover the back electrode 17A and the insulating layer 18B, thereby protecting the entire surface of the resist layer 29C.
• Film 40B was formed.
• the protective film 40A provided on the front-side metal layer 16A is removed, and the front-side metal layer 16A is subjected to an etching treatment, and as shown in FIG. To remove all of it, and remove the laminate 10C.
• the etching resist for patterning is covered so as to cover the surface electrode portion 16 and the portion to be the holding portion 19 in the first backside metal layer 19A.
• a film 14A is formed.
• the exposed portion is removed by performing an etching process on the first rear surface side metal layer 19A, and as shown in FIG. 24 (b), the peripheral surface of the base end portion of the surface electrode portion 16 is formed.
• the holding portion 19 is also formed so that the force is continuously extended radially outward along the surface of the insulating layer 18B, thereby forming the electrode structure 15.
• the protective films 40B and the resist layer 29C are removed, and the resist films 14B and 17E are formed on the laminate 10A so that a part of the metal frame plate 24 is exposed.
• the resist films 14B and 17E are formed on the laminate 10A so that a part of the metal frame plate 24 is exposed.
• the sheet probe 10 is obtained.
• the periphery of the sheet-shaped probe 10, ie, the outer periphery of the metal frame plate 24, is separated from the insulating layer 18B.
• a rigid flat plate-shaped support member 2 can be provided via an adhesive.
• the metal frame plate 24 and the back surface electrode portion 17 have different metal member forces.
• the metal frame plate 24 has a structure in which the plurality of through-holes 12 are formed of a metal material formed by, for example, punching, laser caroe, or the like.
• the back electrode portion 17 is subjected to electrolytic plating to form each short-circuit portion forming recess 18K and each pattern of the resist film 29A. It is made of a metal material formed as the back electrode 17 by filling the hole 29H with metal.
• the metal frame plate 24 and the back surface electrode portion 17 are formed of different metal members, there are no restrictions on the type of metal, thickness, and the like of the metal frame plate 24.
• the metal frame plate 24 can be formed of any metal type and any thickness in consideration of availability and the like.
• the back electrode portion 17 is not limited to the metal as the metal frame plate 24. For example, copper or the like having excellent electrical characteristics can be used as a constituent metal of the back electrode 17.
• the constituent metal of the metal member forming the metal frame plate 24 and the constituent metal of the metal member forming the back electrode portion 17 may be formed of constituent metals of different metal types! .
• constituent metal of the metal member forming the metal frame plate 24 and the constituent metal of the metal member forming the back electrode portion 17 may be formed of the same metal type!
• a plurality of through holes 12 are formed at each position corresponding to each integrated circuit on the wafer to be inspected.
• the insulating layers 18B are formed in these through holes 12 so as to isolate each of them.
• FIG. 26 (FIG. 26 (a) is a plan view, and FIG. 26 (b) is a cross-sectional view taken along line X—X)
• the insulating layer 18B is integrally formed, and one continuous
• Fig. 27 (Fig. 27 (a) is a plan view and Fig. 27 (b) is a cross-sectional view taken along the line X-X)
• the insulating layer 18B may include a plurality of contact films 9 as shown in Fig. 27. (Four in the figure) to form a continuous support for a plurality of contact films 9.
• FIG. 48 (b) using a ring-shaped metal frame plate 24 having one large-diameter through hole 12 formed in the center, as shown in FIG. (a) is a plan view, and FIG. 28 (b) is a cross-sectional view taken along line X-X.)
• the insulating layer 18B is integrally formed in the through hole 12 to form a continuous support portion. Further, it is also possible to form a plurality of electrode structures 17 at each position corresponding to each integrated circuit on the wafer to be inspected.
• the contact film 9 is supported on the periphery of the through hole 12 of the metal frame plate 24 in a state where the periphery of the through hole 12 is sandwiched from both sides by the insulating layer 18B. ing.
• a metal frame plate 24 is prepared, and as shown in FIGS. 29 (a) and (b), a plurality of through holes 12a for connection are formed around the through hole 12 and the periphery of the through hole 12.
• the metal frame plate 24 is formed by, for example, etching.
• Figs. 30 (a) and (b) are the same as Figs. 19 (a) and (b), respectively, and in this state, as shown in Fig. 30 (c), the first back side electrode
• the metal frame plate 24 was laminated on the insulating layer 18B formed so as to cover the holding section 19 on the layer 19A.
• the upper force of the metal frame plate 24 is again formed by forming the insulating layer 18B, thereby filling the connecting through hole 12a with the insulating layer 18C.
• a laminate 10B having the metal frame plate 24 formed in the layer 18B was obtained.
• a second back side metal layer 17A is formed on such an insulating layer 18B, and then, as shown in FIG. 31 (c).
• a resist film 28A for etching having a plurality of pattern holes 28H formed in accordance with a pattern corresponding to the pattern of the electrode structure 15 to be formed is formed on the laminate 10A. I do.
• various materials used as a photoresist for etching can be used.
• a portion of the insulating layer 18B exposed through the respective pattern holes 28H of the resist film 28A and the respective through holes 17H of the second backside metal layer 17A is subjected to an etching treatment to remove the portions.
• the insulating layer 18B communicates with the pattern hole 19H of the first backside metal layer 19A, and is directed from the back surface to the front surface of the insulating layer 18B.
• a plurality of tapered through holes 18H having a smaller diameter and exposing the surface electrode portion 16 are formed on the bottom surface.
• a plurality of short-circuit portion forming recesses 18 K formed by communicating the pattern holes 17H of the second rear surface side metal layer 17A and the through holes 18H of the insulating layer 18B are formed on the rear surface of the laminate 10B. It is formed.
• an etching agent for etching the second rear surface side metal layer 17A is appropriately selected according to a material constituting these metal layers.
• the etching solution used for etching the insulating sheet 11 can be used as an etching solution for etching the insulating layer 18B.
• the resist film 28A is removed from the laminated body 10B in which the short-circuit-portion forming recesses 18K are formed as described above, and thereafter, as shown in FIG.
• a mask resist film 29A having a plurality of pattern holes 29H formed in accordance with a pattern corresponding to the pattern of the back electrode portion 17 in the electrode structure 15 to be formed is formed.
• the laminated body 10B is subjected to electrolytic plating using the surface-side metal layer 16A as an electrode to fill the metal into each short-circuit-portion forming recess 18K and each pattern hole 29H of the resist film 29A.
• the short-circuit portion 18 that extends continuously through the base electrode of each of the front surface electrode portions 16 in the thickness direction thereof and is connected to the back surface side of the insulating layer 18B of each of the short-circuit portions 18.
• the back electrode portion 17 was formed.
• each of back surface electrode portions 17 is in a state of being connected to each other via second back surface side metal layer 17A.
• the resist 10A is also removed by the laminate 10B formed with the front surface electrode portion 16, the short-circuit portion 18 and the back surface electrode portion 17, and thereafter, as shown in FIG. 33 (c). As shown, a patterned etching resist film 29B was formed on the back electrode portion 17.
• a photoresist for etching is used as a material for forming the resist film 29B.
• Various types can be used.
• the resist film 29B is removed, a resist layer 29C is formed so as to cover the back electrode 17A and the insulating layer 18B, and the entire surface of the resist layer 29C is protected.
• Film 40B was formed.
• the protective film 40A provided on the front-side metal layer 16A is removed, and the front-side metal layer 16A is subjected to an etching treatment, and as shown in FIG. Then, the whole was removed by performing an etching process to obtain a laminate 10C.
• the etching resist for patterning is covered so as to cover the surface electrode portion 16 and the portion to be the holding portion 19 in the first backside metal layer 19A.
• a film 14A is formed.
• the first back-side metal layer 19A is subjected to an etching treatment to remove the exposed portion, thereby obtaining the peripheral surface of the base end portion of the front electrode portion 16 as shown in FIG. 35 (b).
• a holding portion 19 is formed which extends radially outward along the surface of the insulating layer 18B continuously, thereby forming the electrode structure 15.
• the protective films 40B and the resist layer 29C are removed, and the resist films 14B and 17E are formed on the laminate IOC so that a part of the metal frame plate 24 is exposed. Formed on the lower surface. At this time, the resist film 17E is covered so as to cover the connection through-hole 12a. Then, by performing an etching process in this state, a part of the metal frame plate 24 is exposed as shown in FIG.
• the periphery of the sheet-like probe 10, ie, the outer periphery of the metal frame plate 24, is separated from the insulating layer 18B.
• a rigid flat plate-shaped support member 2 can be provided via an adhesive.
• the surface electrode portion forming recess 10K is previously formed in the laminate 10C having the insulating sheet 11, and the surface electrode portion forming recess 10K is used as a cavity to form the surface electrode portion. Since the surface electrode portion 16 is formed, the surface electrode portion 16 having a small diameter and a small variation in the protrusion height can be obtained.
• the base partial force of the front electrode portion 16 is also continuously increased along the surface of the insulating sheet. Since the holding portion 19 extending outward can be reliably formed, even if the diameter of the surface electrode portion 16 is small, the electrode structure 15 does not lose the back surface force of the insulating layer 18B and has high durability. It is possible to manufacture the sheet probe 10 having the property.
• a short-circuit portion is formed on the laminate 10 B having the insulating layer 18 B integrally laminated on the insulating sheet 11 on which the surface electrode portion 16 is formed.
• a recess 18K was formed.
• the short-circuit portion forming recess 18K is used as a cavity to form the short-circuit portion 18, the surface electrode portion forming recess 10K and the short-circuit portion forming recess 18K are separately formed, so that the thickness is large.
• the recess 18K for forming a short-circuit portion that surely communicates with the surface electrode portion 16 can be formed in the insulating layer 18B, and the electrode structure 15 having a thick short-circuit portion 18 can be formed.
• the sheet probe 10 including the thick insulating layer 18B can be reliably manufactured.
• the second back-side metal layer 17A constituting the laminate 10B is etched to form an opening, thereby dividing and separating the second back-side metal layer 17A, thereby forming the back electrode portion 17 and the metal frame. Since the plate 25 is formed, the metal frame plate 25 made of a metal that is integrated with the insulating layer 18B and electrically insulated from the electrode structure 15 can be reliably manufactured.
• the sheet probe 10 can also be obtained by a method other than the above. For example, after forming a through hole in which the electrode structure 15 is disposed in the insulating layer 18B, the inner surface force of the through hole is changed to the insulating layer 18B. Electroless plating is performed over the surface of the insulating layer 18B, and a resist film having an opening pattern having a diameter equal to or larger than the diameter at the position of the through hole is provided on one or both surfaces of the insulating layer 18B.
• the electrode structure 15 can be formed by applying through-hole plating. In this case, the protruding height of the front surface electrode portion 16 or the back surface electrode portion 17 is defined by the height of the resist film or the like.
• FIG. 37 is an explanatory cross-sectional view showing a configuration of an example of a circuit device inspection device according to the present invention.
• the circuit device inspection device integrates each of a plurality of integrated circuits formed on a wafer. This is for performing an electrical inspection of a circuit in a state of a wafer.
• the inspection device for this circuit device includes a probe card 1 (electrically connecting the insulating layer 18B to the metal frame plate 2) for electrically connecting each of the electrodes 7 to be inspected on the wafer 6 as the circuit device to be inspected to the tester.
• this probe card 1 As shown also in an enlarged manner in FIG. 40, a plurality of test electrodes 21 are formed in accordance with the pattern corresponding to the pattern of the test electrode 7 in all the integrated circuits formed on the wafer 6. It has an inspection circuit board 20 formed on the front surface (the lower surface in the figure).
• an anisotropic conductive connector 30 is disposed on the surface of the inspection circuit board 20, and the surface (the lower surface in the figure) of the anisotropic conductive connector 30
• a sheet probe 10 having a configuration shown in FIG. 1 in which a plurality of electrode structures 15 are arranged according to a pattern corresponding to the pattern of the electrode 7 to be inspected in the integrated circuit of FIG.
• the sheet probe 10 is held in a state where the anisotropic conductive connector 30, the electrode structure 15, and the conductive portion 36 are fixed to each other by the guide pins 50.
• a pressure plate 3 for pressing the probe card 1 downward is provided on the back surface (upper surface in the figure) of the inspection circuit board 20 in the probe card 1, and a wafer 6 is placed below the probe card 1.
• a wafer mounting table 4 is provided, and a heater 5 is connected to each of the pressure plate 3 and the wafer mounting table 4.
• such an inspection apparatus for a circuit device may be configured such that the sheet-like probe 10 includes an outer edge portion of a metal frame plate 25 (including the metal frame plate 24) as necessary.
• the support member 2 is used in a fixed state.
• the positioning of the sheet-like probe 10 is achieved by fitting the support member 2 adhered to the outer edge of the metal frame plate 25 (including the metal frame plate 24) and the concave portion of the pressing plate 3 to each other. You can do it! /
• the substrate material constituting the inspection circuit board 20 various conventionally known substrate materials can be used, and specific examples thereof include a glass fiber reinforced epoxy resin and a glass fiber reinforced phenol resin. And composite resin materials such as glass fiber reinforced polyimide resin and glass fiber reinforced bismaleimide triazine resin, and ceramic materials such as glass, silicon dioxide, and alumina.
• the linear thermal expansion coefficient is 3 X
• the anisotropic conductive connector 30 has a plurality of openings 32 corresponding to the electrode regions where the electrodes 7 to be inspected are arranged in all the integrated circuits formed on the wafer 6 as the circuit device to be inspected. And an anisotropic conductive sheet 35 which is arranged in the frame plate 31 so as to cover one opening 32 and is fixed and supported at the opening edge of the frame plate 31. It is configured.
• the material forming the frame plate 31 is not particularly limited as long as the frame plate 31 does not easily deform and has a rigidity enough to maintain its shape stably. Various materials such as ceramic materials and resin materials can be used. When the frame plate 31 is made of, for example, a metal material, an insulating coating may be formed on the surface of the frame plate 31. ,.
• the metal material constituting the frame plate 31 include metals such as iron, copper, nickel, titanium, and aluminum, and alloys or alloy steels of a combination of two or more thereof.
• the resin material forming the frame plate 31 include a liquid crystal polymer and a polyimide resin.
• the material for forming the frame plate 31 a coefficient of linear thermal expansion 3 X 10- 5 ZK following ones more preferably it is preferred instrument using an 1 X ⁇ - 7 ⁇ X IO K , particularly good Mashiku 1 X 10- 6 ⁇ 8 X 10- 6 ⁇ .
• Such a material include an Invar-type alloy such as Invar, an Elinvar-type alloy such as Elinvar, an alloy of magnetic metals such as Super Invar, Kovar, and 42 alloy or alloy steel.
• the thickness of the frame plate 31 is not particularly limited as long as its shape is maintained and the anisotropic conductive sheet 35 can be supported. For example, it is preferably 25 to 600 ⁇ m, more preferably 40 to 400 ⁇ m.
• Each of the anisotropic conductive sheets 35 is formed of an elastic polymer material, and corresponds to the pattern of the electrode 7 to be inspected in one electrode region formed on the wafer 6 as the circuit device to be inspected. It is composed of a plurality of conductive portions 36 formed in accordance with the pattern and extending in the thickness direction, and an insulating portion 37 for insulating each of these conductive portions 36 from each other.
• each of the conductive portions 36 in the anisotropic conductive sheet 35 contains conductive particles P exhibiting magnetism densely in a state aligned in the thickness direction.
• the insulating portion 37 contains no or almost no conductive particles P.
• the total thickness of the anisotropic conductive sheet 35 (the thickness of the conductive portion 36 in the illustrated example) is preferably 50 to 2000 ⁇ m, more preferably 70 to: LOOO ⁇ m, and particularly preferably. Is 80-500 ⁇ m.
• the thickness is 50 ⁇ m or more, sufficient strength is obtained for the anisotropic conductive sheet 35.
• the thickness is 2000 m or less, the conductive portion 36 having required conductivity characteristics is obtained. Is surely obtained.
• the total height of the protrusions 38 is preferably 10% or more of the thickness of the protrusions 38, and more preferably 15% or more.
• the conductive portion 36 is sufficiently compressed with a small pressing force, so that good conductivity is reliably obtained.
• the protruding height of the protruding portion 38 is preferably 100% or less of the shortest width or diameter of the protruding portion 38, more preferably 70% or less.
• the protruding portion 38 By forming the protruding portion 38 having such a protruding height, the protruding portion 38 does not buckle when pressed, so that the intended conductivity is reliably obtained.
• the elastic polymer material forming the anisotropic conductive sheet 35 a heat-resistant polymer material having a crosslinked structure is preferable.
• a liquid silicone rubber that can use various materials is preferable.
• the magnetic core particles for obtaining the conductive particles P preferably have a number average particle diameter of 3 to 40 ⁇ m.
• the number average particle diameter of the magnetic core particles refers to a value measured by a laser diffraction scattering method.
• the fine conductive portion 36 can be easily formed, and the obtained conductive portion 36 tends to have stable conductivity.
• the material constituting the magnetic core particles iron, nickel, cobalt, or a material obtained by coating these metals with copper or resin can be used.
• the saturation magnetic force is 0.1 W b / m. 2 or more can be preferably used, more preferably 0.3 Wb / m 2 or more, particularly preferably 0.5 WbZm 2 or more, specifically, iron, nickel, cobalt, or an alloy thereof. And the like.
• Examples of the highly conductive metal coated on the surface of the magnetic core particles include gold, silver, rhodium, platinum, and platinum. And the like. Of these, gold is preferred because it is chemically stable and has high conductivity.
• the ratio of the highly conductive metal to the core particles is 15% by mass or more, and preferably 25 to 35% by mass. It is said.
• the proportion of the highly conductive metal is less than 15% by mass, when the obtained anisotropically conductive connector 30 is repeatedly used in a high-temperature environment, the conductivity of the conductive particles P is significantly reduced. The required conductivity cannot be maintained.
• the number average particle diameter of the conductive particles P is preferably from 3 to 40 ⁇ m, more preferably from 6 to 25 ⁇ .
• the anisotropic conductive sheet 35 obtained can be easily deformed under pressure, and sufficient electric contact can be obtained between the conductive particles in the conductive portion 36.
• the shape of the conductive particles is not particularly limited, but is spherical, star-shaped, or spherical in that it can be easily dispersed in the polymer substance-forming material. It is preferable that the particles are in the form of aggregates of aggregated secondary particles.
• the content ratio of the conductive particles in the conductive portion 36 is preferably such that the volume fraction is 10 to 60%, preferably 15 to 50%.
• the obtained conductive portion 36 may be fragile or may not immediately have the necessary elasticity as the conductive portion 36.
• the anisotropic conductive connector 30 as described above can be manufactured, for example, by the method described in JP-A-2002-324600.
• the wafer 6 to be inspected is placed on the wafer mounting table 4 and then the probe card 1 is pressed downward by the pressure plate 3 to form a sheet.
• the force of each of the surface electrodes 16 in the electrode structure 15 of the probe 10 comes into contact with each of the electrodes 7 to be inspected of the wafer 6, and further, each of the electrodes 7 to be inspected of the wafer 6 is pressed by each of the surface electrodes 16. Is done.
• each of the conductive portions 36 of the anisotropic conductive sheet 35 of the anisotropic conductive connector 30 is connected to the test electrode 21 of the test circuit board 20 and the electrode structure 15 of the sheet probe 10. It is sandwiched by the back surface electrode portion 17 and compressed in the thickness direction.
• the probe card 1 since the probe card 1 is provided with the sheet-like probe 10 shown in FIG. 1, a stable electric connection can be made to the wafer 6 on which the electrodes 7 to be inspected are formed at a small pitch. The state can be reliably achieved, and the thickness of the insulating layer 18B, which prevents the electrode structure 15 in the sheet-like probe 10 from falling off, is large, so that high durability can be obtained.
• the wafer 6 on which the electrodes 7 to be inspected are formed at a small pitch is provided.
• the stable electrical connection state can be reliably achieved, and since the probe card 1 has high durability, even when a large number of wafers 6 are inspected, the reliability is high over a long period of time. , Inspection can be performed.
• circuit device inspection device of the present invention is not limited to the above-described example, and various changes can be made as follows.
• the probe card 1 shown in FIGS. 37 and 38 achieves collective electrical connection to the electrodes 7 to be inspected of all the integrated circuits formed on the wafer 6, It may be electrically connected to the electrodes 7 to be inspected of a plurality of integrated circuits selected from all the formed integrated circuits.
• the number of integrated circuits to be selected is appropriately selected in consideration of the size of the wafer 6, the number of integrated circuits formed on the wafer 6, the number of electrodes 7 to be inspected in each integrated circuit, and, for example, 16 , 32, 64, 128.
• a probe card is attached to the electrodes 7 to be inspected of a plurality of integrated circuits selected from all the integrated circuits formed on the wafer 6.
• the test is performed by electrically connecting the probe card 1 to the electrodes 7 to be inspected of a plurality of integrated circuits selected from other integrated circuits. By repeating the process, electrical inspection of all the integrated circuits formed on the wafer 6 can be performed.
• test circuit board 20 when an electrical inspection is performed on an integrated circuit formed on a wafer 6 having a diameter of 8 inches or 12 inches with a high degree of integration, The number of test electrodes and wires of the test circuit board 20 used can be reduced as compared with the method of performing a test for all integrated circuits at once. The manufacturing cost can be reduced.
• the circuit device to be inspected by the inspection device of the present invention is not limited to the wafer 6 on which a large number of integrated circuits are formed, and is a semiconductor device such as a semiconductor chip or a package LSI such as a BGA or a CSP. It can be configured as an inspection device for a circuit formed in a semiconductor integrated circuit device such as a CMC.
• the sheet-shaped probe 10 is fixed to the anisotropic conductive sheet 35 and the inspection circuit board 20 with the guide pins 50 and the like while being held by a cylindrical holding member such as ceramic. Talk about it.
• the second back-side metal layer 17A is indispensable and is omitted, and the short-circuit portion forming recess 18K and the pattern hole 17H are formed.
• the back electrode portion 17 integrally formed with the short-circuit portion 18 may be formed by filling a metal.
• the metal frame plate 25 prepared separately and the sheet-like probe 10 manufactured may be laminated using an adhesive or the like and integrated.
• the sheet-like probe 10 of the present invention for example, the plurality of contact films 9 made of the insulating layer 18B having the electrode structure 15 as shown in FIG. A sheet-like probe 10 placed in each of the openings 26 and supported by the metal frame plate 25 may be used. Further, as shown in FIG. It may be arranged to cover a number of openings 26!
• Such a sheet probe 10 is formed by patterning and etching the insulating layer 18B with a resist in the state of FIG. 17 (d) or FIG. 24 (c) in the method of manufacturing the sheet probe 10 of the present invention. To divide the insulating layer 18B into contact films 9 having an arbitrary shape.
• a diameter of 8 inch silicon (coefficient of linear thermal expansion 3. 3 X 10- 6 ZK) made of Ueno, on 6, dimensions respectively 6. 85 mm X 6. 85 mm square integrated circuits 483 L were formed in total.
• Each of the integrated circuits L formed on the wafer 6 has, as shown in FIG. 44, electrode areas A to be inspected in the center thereof in two rows at an interval of 2500 m.
• each of the 26 electrodes to be inspected has a rectangular dimension of 90 m in the vertical direction (vertical direction in Fig. 45) and 90 ⁇ m in the horizontal direction (horizontal direction in Fig. 45). Are arranged horizontally in a row at a pitch of 120 ⁇ m.
• test wafer Wl The total number of the electrodes 7 to be inspected in the entire wafer 6 is 26,116, and all the electrodes 7 to be inspected are electrically insulated from each other.
• this wafer 6 is referred to as “test wafer Wl”.
• two out of every 26 electrodes to be inspected in the integrated circuit L are counted from the outermost electrode 7 to be inspected. 483 integrated circuits L having the same configuration as that of the above-described test ueno W1 except that they were electrically connected to each other were formed on the wafer 6.
• test wafer W2 this wafer is referred to as "test wafer W2".
• a laminated polyimide sheet (hereinafter, referred to as a “laminated body 1 OA”) in which a metal layer made of copper having a diameter of 20 cm and a thickness of 4 m is laminated on both sides of a polyimide sheet having a diameter of 20 cm and a thickness of 25 ⁇ m on each side.
• the laminate 10A has a first backside metal layer 19A made of copper having a thickness of 4 m on one surface of an insulating sheet 11 made of a polyimide sheet having a thickness of 25 ⁇ m and a thickness of 4 m on the other surface. It has a surface-side metal layer 16A made of copper.
• a protective film 40A is formed on the entire surface of the front-side metal layer 16A by a protective seal made of polyethylene terephthalate having a thickness of 25 ⁇ m with respect to the laminate 10A, and the first back-side metal layer 19A is formed.
• a resist film 12A was formed on the entire backside surface of the resist wafer 12A, in which 26116 circular holes 12H having a diameter of 55 ⁇ m were formed according to the pattern corresponding to the pattern of the electrode 7 to be inspected formed on the test wafer W1 ( (See Fig. 12 (b)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer composed of a 1% sodium hydroxide aqueous solution for 40 seconds. The operation was repeated twice.
• a ferric chloride-based etching solution was applied to the first rear-surface-side metal layer 19A using a ferric chloride-based etching solution.
• a ferric chloride-based etching solution was applied to the first rear-surface-side metal layer 19A using a ferric chloride-based etching solution.
• the insulating sheet 11 was subjected to an etching treatment using an amine-based polyimide etching solution (“TPE-3000” manufactured by Toray Engineering Co., Ltd.) at 80 ° C for 10 minutes. Then, 26116 through-holes 11H communicating with the pattern holes 19H of the first backside metal layer 19A were formed in the insulating sheet 11 (see FIG. 13A).
• TPE-3000 amine-based polyimide etching solution
• Each of the through holes 11H has a tapered shape that becomes smaller in diameter as it goes from the back surface to the front surface of the insulating sheet 11, with an opening diameter on the back surface of 55 ⁇ m and an opening diameter on the front surface. was 20 ⁇ m (average value).
• the resist film 12A was removed from the laminate 10A by immersing the laminate 10A in a sodium hydroxide solution at 45 ° C. for 2 minutes.
• a resist film 13A is formed with a ⁇ m dry film resist (Hitachi Chemical: PHOTEC RY-3210) so as to cover the entire surface of the first backside metal layer 19A, and an insulating sheet 11 is formed on the resist film 13A.
• 26116 rectangular pattern holes 13H with a width of 60 ⁇ m and a length of 200 ⁇ m communicating with the through holes 11H were formed (see FIG. 13 (b)).
• the exposure treatment was performed at 80 mJ using a high-pressure mercury lamp.
• the development was carried out by irradiating ultraviolet rays, and the development was carried out by repeating twice the operation of immersing in a developer consisting of a 1% aqueous solution of sodium hydroxide for 40 seconds.
• the through hole 11H of the insulating sheet 11, the pattern hole 19H of the first back side metal layer 19A, and the pattern hole 13H of the resist film 13A are communicated with the back surface of the insulating sheet 11, respectively.
• Each surface electrode portion forming recess 10K was formed.
• the laminated body 10A was immersed in a plating bath containing nickel sulfamate, and the laminated body 10A was subjected to electrolytic plating treatment using the surface-side metal layer 16A as an electrode to form each surface electrode portion.
• the holding portions 19 connected to each other by the surface electrode portion 16 and the first backside metal layer 19A were formed (see FIG. 13 (c)). .
• the laminate 10A on which the surface electrode portion 16 was formed was immersed in a sodium hydroxide solution at 45 ° C for 2 minutes to remove the resist film 13A from the laminate 10A.
• a liquid polyimide layer having a thickness of 12 ⁇ m was formed on the surface of the first backside metal layer 19A and the holding section 19 of the laminate 10A.
• a polyimide sheet having a diameter of 20.4 cm and a thickness of 12.5 m was laminated on the formed liquid polyimide layer, and a liquid polyimide layer having a thickness of 12 m was formed on the polyimide sheet.
• the surface of the liquid polyimide layer of the laminate 10A was 22 cm in diameter and 10 ⁇ m in thickness.
• a metal sheet made of 42 alloy was laminated.
• a protective tape made of polyethylene terephthalate having an inner diameter of 20.4 cm and an outer diameter of 22 cm was placed, and subjected to thermocompression bonding in this state to produce a laminate 10B shown in FIG. 14 (a).
• an insulating layer 18B made of a polyimide sheet having a thickness of 36 ⁇ m is laminated on one surface of the laminate 10A on which the surface electrode portion 16 is formed, and a 42 alloy is formed on the surface of the insulating layer 18B. (See FIG. 14 (a)).
• a circular 26116 pattern having a diameter of 60 ⁇ m was formed on the entire surface of the second backside metal layer 17A with respect to the laminate 10B according to the pattern corresponding to the pattern of the electrode to be inspected formed on the test wafer W1.
• a resist film 28A with holes 28H was formed (Fig. 14 (b)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• the insulating layer 18B was etched by using an amine-based polyimide etching solution ("TPE-3000", manufactured by Toray Engineering Co., Ltd.) at 80 ° C for 15 minutes.
• TPE-3000 amine-based polyimide etching solution
• 26116 through-holes 18H communicating with the pattern holes 17H of the second backside metal layer 17A were formed (see FIG. 15A).
• Each of the through holes 18H has a tapered shape whose diameter becomes smaller in accordance with the directional force on the surface of the insulating layer 18B, the back surface electrode portion 17 is exposed at the bottom surface, and the opening diameter on the back surface side is reduced.
• the opening diameter on the 60 ⁇ m surface side was 25 ⁇ m.
• the resist film 28A is removed from the laminate 10B by immersing the laminate 10B having the through-hole 18H formed therein in a sodium hydroxide solution at 45 ° C. for 2 minutes.
• a resist film 29A is formed on 10B with a dry film resist having a thickness of 10 / zm so as to cover the entire surface of the second backside metal layer 17A, and the resist film 29A has a through-hole of the insulating layer 18B. 26116 rectangular pattern holes 29H measuring 200 mx 60 m communicating with 18H were formed (see Fig. 15 (b)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• the laminate 10B was immersed in a plating bath containing nickel sulfamate and laminated.
• the body 10B is subjected to electrolytic plating using the surface-side metal layer 16A as an electrode to fill each short-circuit portion forming recess 18K with metal, thereby connecting the short-circuit portion 18 and the short-circuit portion 18 connected to the surface electrode portion 16.
• the back surface electrode portions 17 connected to each other by the second back surface side metal layer 17A were formed (see FIG. 15C).
• the laminate 10B was immersed in a sodium hydroxide solution at 45 ° C. for 2 minutes to remove the resist film 29A from the laminate 10B. Thereafter, an etching having a pattern hole 29K is performed by patterning with a dry film resist having a thickness of 25 ⁇ m so as to cover the portion to be the metal frame plate 25 in the second backside metal layer 17A and the backside electrode portion 17.
• a resist film 29B was formed (see FIG. 16A).
• the exposure treatment was performed by irradiating 80 mi of ultraviolet rays with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• the protective film 40A was also removed from the laminate 10B, and then the surface-side metal layer 16A and the second back-side metal layer 17A were subjected to an ammonia-based etchant at 50 ° C for 30 seconds.
• an ammonia-based etchant at 50 ° C for 30 seconds.
• the entire surface-side metal layer 16A is removed, and at the same time, the portion of the second rear-surface-side metal layer 17A exposed by the pattern hole 29K is removed.
• a metal frame plate 25 having a plurality of openings 26 formed according to a pattern corresponding to the pattern of the electrode region in the integrated circuit formed on the test wafer W1 (FIG. 16). (See (b)).
• Each of the openings 26 provided in the metal frame plate 25 is 3600 m in the horizontal direction and 1000 ⁇ m in the vertical direction.
• a resist film 17E is formed with a dry film resist having a thickness of 25 ⁇ m so as to cover the back surface of the metal frame plate 25, the back surface of the insulating layer 18B, and the back electrode portion 17, and the resist film 17E is formed to a thickness of 25 ⁇ m.
• a protective film 40B made of polyethylene terephthalate (see FIG. 16 (c)).
• the laminate 10B was subjected to an etching treatment at 80 ° C for 10 minutes by using an amine-based polyimide etching solution (“TPE-3000” manufactured by Toray Engineering Co., Ltd.), to thereby provide insulation.
• TPE-3000 an amine-based polyimide etching solution manufactured by Toray Engineering Co., Ltd.
• a notched resist film 14A is formed using a dry film resist having a thickness of 25 ⁇ m so as to cover the surface electrode portion 16 and the portion to be the holding portion 19 in the first backside metal layer 19A. (See Fig. 17 (b)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet rays with a high-pressure mercury lamp, and the development treatment was immersed in a developer composed of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• a ferric chloride-based etching solution was applied to the first rear-surface-side metal layer 19A using a ferric chloride-based etching solution.
• C by performing the etching process under the conditions of 30 seconds, the peripheral force of the base end portion of the surface electrode portion 16 also extends continuously along the surface of the insulating layer 18B to a lateral width of 60 m and a vertical width of 200 m. An m-shaped rectangular holding portion 19 was formed, thereby forming an electrode structure 15 (see FIG. 17C).
• the surface electrode portion 1 was immersed in an aqueous sodium hydroxide solution at 45 ° C for 2 minutes.
• the resist film 14A was removed from 6 and the holding section 19.
• a resist film was formed with a dry film resist having a thickness of 25 m so as to cover the surface electrode portion 16 and the insulating layer 18B of the laminate 10B, and was patterned so as to cover a portion to be the contact film 9.
• a resist film 17F was formed (FIG. 17D).
• Each of the resist films 17F is 4600 ⁇ m in the horizontal direction and 2000 ⁇ m in the vertical direction.
• the protective film 40B was also removed from the laminate 10C, and then the resist film 17E and the resist film 17F were removed by immersion in a 45 ° C aqueous sodium hydroxide solution for 2 minutes (FIG. 18). .
• the periphery of the metal frame plate 25 was made of polyethylene terephthalate.
• the protective tape is removed, and an adhesive (Semedine Co., Ltd .: two-component acrylic adhesive Y-620) is applied to the surface of the peripheral portion of the metal frame plate 25 to form an adhesive layer.
• an adhesive (Semedine Co., Ltd .: two-component acrylic adhesive Y-620) is applied to the surface of the peripheral portion of the metal frame plate 25 to form an adhesive layer.
• the holding member 40 and the metal frame plate 25 are pressed with a load of 50 kg, and are heated at 25 ° C for 8 hours. By holding, the holding member 40 was joined to the metal frame plate 25, whereby the sheet probe 10 according to the present invention was manufactured.
• H-K350 manufactured by Hitachi Chemical was used as the dry film resist, especially in the parts that were not described.
• one contact film 9 is constituted by one insulating layer 18B.
• the thickness d of the insulating layer 18B in the contact film 9 is 36 m
• the shape of the surface electrode portion 16 of the electrode structure 15 is a truncated cone
• the base diameter R1 is 55 m
• the tip diameter R2 is 20 /.
• the shape of the short-circuit part 18 is a truncated cone
• the diameter R3 at one end on the front side is 25 ⁇ m
• the diameter R4 at the other end on the back side is 60 ⁇ m
• the back side The shape of the electrode part 17 is a rectangular flat plate
• the width (diameter R5) is 60 ⁇ m
• the vertical width is 200 ⁇ m
• the thickness d2 is 20 m
• the shape of the holding part 19 is rectangular
• the vertical width is 200 m
• the thickness dl is 14 ⁇ m.
• sheet probe Ml sheet probe M4
• Metal frame plate 24 H2: 42 Aroi about 5X10- 6 ZK
• Supporting member 2 ⁇ 3: Silicon nitride 3.5 ⁇ 10— 6 ⁇
• a laminated polyimide sheet (hereinafter, referred to as a “laminated body 1 OA”) in which a metal layer made of copper having a diameter of 20 cm and a thickness of 4 m is laminated on both sides of a polyimide sheet having a diameter of 20 cm and a thickness of 25 ⁇ m on each side. Prepared (see Fig. 12 (a)).
• the laminate 10A has a first backside metal layer 19A made of copper having a thickness of 4 m on one surface of an insulating sheet 11 made of a polyimide sheet having a thickness of 25 ⁇ m and a thickness of 4 m on the other surface. It has a surface-side metal layer 16A made of copper.
• the protective film 40A is formed on the entire surface of the front-side metal layer 16A by a protective seal made of polyethylene terephthalate having a thickness of 25 ⁇ m on the laminate 10A, and the first back-side metal layer 19A is formed.
• a resist film 12A was formed on the entire backside surface of the resist wafer 12A, in which 26116 circular holes 12H having a diameter of 55 ⁇ m were formed according to the pattern corresponding to the pattern of the electrode 7 to be inspected formed on the test wafer W1 ( (See Fig. 12 (b)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• a ferric chloride-based etching solution was applied to the first backside metal layer 19A by using a ferric chloride-based etching solution.
• a ferric chloride-based etching solution was applied to the first backside metal layer 19A by using a ferric chloride-based etching solution.
• the insulating sheet 11 was subjected to an etching treatment at 80 ° C for 10 minutes using an amine-based polyimide etching solution (“TPE-3000” manufactured by Toray Engineering Co., Ltd.). Then, 26116 through-holes 11H communicating with the pattern holes 19H of the first backside metal layer 19A were formed in the insulating sheet 11 (see FIG. 13A).
• TPE-3000 an amine-based polyimide etching solution
• Each of the through holes 11H has a tapered shape that becomes smaller in diameter as it goes from the back surface to the front surface of the insulating sheet 11, and has an opening diameter of 55 ⁇ m on the back surface and an opening diameter on the front surface. was 20 ⁇ m.
• the resist film 12A was removed from the laminate 10A by immersing the laminate 10A in a sodium hydroxide solution at 45 ° C. for 2 minutes.
• First-level backside with a ⁇ m dry film resist (Hitachi Chemical: Photec RY-3210)
• a resist film 13A is formed so as to cover the entire surface of the surface-side metal layer 19A, and 26116 pieces having a width of 60 ⁇ m and a height of 200 ⁇ m communicating with the through holes 11H of the insulating sheet 11 are formed on the resist film 13A.
• a rectangular pattern hole 13H was formed (see FIG. 13 (b)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet rays with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• the through hole 11H of the insulating sheet 11, the pattern hole 19H of the first back side metal layer 19A, and the pattern hole 13H of the resist film 13A are communicated with the back surface of the insulating sheet 11, respectively.
• Each surface electrode portion forming recess 10K was formed.
• the laminate 10A was immersed in a plating bath containing nickel sulfamate, and the laminate 10A was subjected to electrolytic plating using the surface-side metal layer 16A as an electrode to form each surface electrode portion.
• the holding portions 19 connected to each other by the surface electrode portion 16 and the first backside metal layer 19A were formed (see FIG. 13 (c)). .
• the resist film 12A was removed from the laminate 10A by immersing the laminate 10A on which the surface electrode portions 16 were formed in a sodium hydroxide solution at 45 ° C. for 2 minutes (FIG. 19 ( a)).
• a liquid polyimide layer 18B having a thickness of 12 m was formed on the surface of the first backside metal layer 19A of the laminate 10A. (See Figure 19 (b)).
• a through-hole of 3600 m in the horizontal direction and 1000 m in the vertical direction is formed at a position corresponding to each inspection area A of the integrated circuit L on the test wafer W1 by a 42 alloy having a diameter of 22 cm and a thickness of 10 m.
• a metal frame plate 24 having a protective tape made of polyethylene terephthalate having an inner diameter of 20.4 cm and an outer diameter of 22 cm was prepared on both sides of the periphery thereof by etching.
• the metal frame plate 24 having a through-hole formed on the surface of the liquid polyimide layer 18B of the laminate 10A is placed in the through-hole of the metal frame plate 24 by the surface electrode portion formed on the laminate 10A. Positioning was performed so that No. 16 was located, and they were superimposed (see FIG. 19 (c)). Then, liquid polyimide was applied to the surface of the metal frame plate 24 to form a liquid polyimide layer having a thickness of 12 m (see FIG. 20 (a)).
• an insulating layer 18B made of polyimide having a thickness of 36 ⁇ m is laminated on one surface of the laminate 10A on which the surface electrode portion 16 is formed, and a 4 m thick insulating layer is formed on the surface of the insulating layer 18B. It has a second backside metal layer 17A made of copper (see FIG. 20 (b)).
• a 25 m-thick dry film resist is applied to the entire surface of the second backside metal layer 17A for the laminate 10B according to the pattern corresponding to the pattern of the electrode to be inspected formed on the test wafer W1.
• a resist film 28A was formed in which 26116 circular pattern holes 28H having a diameter force of ⁇ O / zm were formed (see FIG. 20 (c)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% sodium hydroxide aqueous solution for 40 seconds. The operation was repeated twice.
• a ferric chloride-based etchant was applied to the second backside metal layer 17A.
• 26116 pattern holes 17H communicating with the pattern holes 28H of the resist film 28A were formed in the second backside metal layer 17A (FIG. 21 (a)). reference).
• the insulating layer 18B was etched by using an amine-based polyimide etching solution ("TPE-3000", manufactured by Toray Engineering Co., Ltd.) at 80 ° C for 15 minutes.
• TPE-3000 amine-based polyimide etching solution
• 26116 through holes 18H communicating with the pattern holes 17H of the second backside metal layer 17A were formed (see FIG. 21B).
• Each of the through holes 18H has a tapered shape whose diameter becomes smaller according to the directional force on the surface of the insulating layer 18B, the back surface electrode portion 17 is exposed at the bottom surface, and the opening diameter on the back surface side is reduced.
• the opening diameter on the 60 ⁇ m surface side was 25 ⁇ m.
• the resist film 28A was removed from the laminate 10A by immersing the laminate 10A in which the through holes 18H were formed in a sodium hydroxide solution at 45 ° C. for 2 minutes.
• dry film resist with a thickness of 10 / zm provides a second backside metal layer
• a resist film 29A is formed so as to cover the entire surface of 17A, and 26116 rectangular no-turn holes 29H measuring 200 mx 60 m and communicating with the through holes 18H of the insulating layer 18B are formed in the resist film 29A. (See Fig. 21 (c)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer composed of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• the laminate 10B was immersed in a plating bath containing nickel sulfamate, and the laminate 10B was subjected to electrolytic plating using the surface-side metal layer 16A as an electrode to form each short-circuit portion.
• a back electrode portion 17 connected to the front electrode portion 16 and connected to each other by the short-circuit portion 18 and the second back side metal layer 17A is formed (see FIG. 22 (a)).
• the laminate 10A was immersed in a sodium hydroxide solution at 45 ° C for 2 minutes.
• the resist film 29A was removed from the laminated body 10A (see FIG. 22B).
• a patterned resist film 29B was formed using a dry film resist having a thickness of 25 / zm so as to cover the back surface electrode portion 17 of the second back surface side metal layer 17A (FIG.
• the exposure treatment was performed by irradiating 80 mi of ultraviolet light with a high-pressure mercury lamp, and the development treatment was immersed in a developer composed of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• the protective film 40A was also removed from the laminate 10B, and then the surface-side metal layer 16A and the second back-side metal layer 17A were treated with an ammonia-based etchant at 50 ° C for 30 seconds. By performing the etching process under the conditions, the entire front surface side metal layer 16A and a part of the second rear surface side metal 17A were removed (see FIG. 23A).
• a resist film 29C is formed on the entire surface of the insulating layer 18B of the laminate 10B and the entire surface of the back electrode 17 using a dry film resist having a thickness of 25 ⁇ m.
• a protective film 40B was formed on the entire surface of the resist film 29C by a protective seal made of polyethylene terephthalate having a thickness of 25 ⁇ m (see FIG. 23 (b)).
• the laminate 10B is subjected to an etching treatment with an amine-based polyimide etching solution (“TPE-3000” manufactured by Toray Engineering Co., Ltd.) at 80 ° C. for 10 minutes to form the insulating sheet 11B. Was removed (see FIG. 23 (c)).
• TPE-3000 amine-based polyimide etching solution
• a notched resist film 14A is formed using a dry film resist having a thickness of 25 ⁇ m so as to cover the surface electrode portion 16 and the portion to be the holding portion 19 in the first backside metal layer 19A. (See Fig. 24 (a)).
• the exposure treatment was performed by irradiating 80 mJ of ultraviolet rays with a high-pressure mercury lamp, and the development treatment was immersed in a developer consisting of a 1% aqueous sodium hydroxide solution for 40 seconds. The operation was repeated twice.
• a ferric chloride-based etchant was applied to the first backside metal layer 19A, using a ferric chloride-based etching solution.
• C by performing an etching process under the conditions of 30 seconds, a disk-ring-shaped holding portion that extends radially outward along the surface of the insulating layer 18B continuously from the peripheral surface of the base end portion of the surface electrode portion 16 Thus, the electrode structure 15 was formed.
• the resist film 14A was removed from the surface electrode portion 16 and the holding portion 19 by immersing it in a 45 ° C. aqueous sodium hydroxide solution for 2 minutes.
• the protective film 40B was removed, and the resist film 29C was removed from the surfaces of the insulating layer 18B and the back electrode 17 (see FIG. 24 (b)).
• the resist films 14B and 17E which were patterned with the dry film resist having a thickness of 25 ⁇ m on both surfaces of the laminated body 10B so as to cover the portions to be the contact films 9 were formed.
• 17E are 4600 mx horizontal and 2000 m vertical.
• an amine-based polyimide etchant (“T 3000-3000” manufactured by Toray Engineering Co., Ltd.) is used for etching at 80 ° C. for 10 minutes to allow each metal frame plate to pass through.
• a laminate 10C having the contact film 9 in which the electrode structure 15 was formed in the hole was obtained (FIG. 25 (a)).
• the resist films 14B and 17E were removed from both surfaces of the contact film 9 by immersion in an aqueous sodium hydroxide solution at 45 ° C for 2 minutes (Fig. 25 (b)).
• the protective tape was removed from the periphery of the metal frame plate 24, and the metal frame plate 24 was removed.
• An adhesive (Semedine Co., Ltd .: two-component acrylic adhesive Y-620) is applied to the surface of the peripheral part of the above to form an adhesive layer, and a resin having an outer diameter of 22 cm, an inner diameter of 20.5 cm and a thickness of 2 mm is formed.
• the supporting member 2 made of silicon nitride is pressed with a load of 50 kg and held at 25 ° C. for 8 hours, thereby being bonded with an adhesive.
• the sheet probe 10 according to the invention was manufactured.
• H-K350 manufactured by Hitachi Chemical was used as the dry film resist.
• the obtained sheet probe 10 has 966 contact films 9 measuring 4600 m in the horizontal direction and 2000 m in the vertical direction, the thickness d of the insulating layer 18B in the contact film 9 is 36 m, and the surface electrode portion of the electrode structure 15 is provided.
• the shape of 16 is a truncated cone, its base end diameter R1 is 55 / ⁇ , its tip diameter R2 is 20 ⁇ m, its protruding height h is 25 m, and the short-circuit part 18 is frustoconical.
• the diameter R3 at one end on the front side is 25 ⁇ m
• the diameter R4 at the other end on the back side is 60 ⁇ m
• the shape of the back electrode 17 is a rectangular flat plate
• its width (diameter R5) is 60 ⁇ m.
• the vertical width is 200 ⁇ m
• the thickness d2 force is 20 ⁇ m
• the shape of the holding part 19 is rectangular
• the horizontal width (R6) is 60 ⁇ m
• the vertical width is 200 ⁇ m
• the thickness d1 is 14 m. is there.
• sheet-like probe Nl sheet-like probe N4
• Metal frame plate 24 H2: 42 Aroi about 5X10- 6 ZK
• Supporting member 2 ⁇ 3: Silicon nitride 3.5 ⁇ 10— 6 ⁇
• sheet probe Ll sheet probe L4
• Supporting member 2 ⁇ 3: Silicon nitride 3.5 ⁇ 10— 6 ⁇
• sheet probe Pl sheet probe
• sheet probe P4 sheet probe
• Metal frame plate 24 H2: 42 Aroi about 5X10- 6 ZK
• sheet probe Ql sheet probe Q4
• sheet probe Rl sheet probe Rl
• sheet probe R4 sheet probe R4
• sheet probe Sl sheet probe S4
• Supporting member 2 ⁇ 3: Silicon nitride 3.5 ⁇ 10— 6 ⁇
• a total of four sheet-like probes were manufactured.
• sheet probe Tl sheet probe Tl
• sheet probe # 4 sheet probe # 4
• a laminate 1 32 was prepared.
• the front side metal layer 122 is made of 4 m thick copper
• the insulating sheet 124 is made of 25 m thick polyimide
• the first back side metal layer 126 is 4 m thick.
• the insulating layer 128 is made of polyimide having a thickness of 36 / zm
• the second backside metal layer 130 is made of 42 alloy having a thickness of 10 m.
• a pattern hole having a diameter of 90 m was formed in the second rear-surface-side metal layer 130 according to the method described in JP-A-2004-172589 on the laminate 132, and the insulating sheet 124 was sequentially formed. Then, a through hole 136 is formed continuously with the first back side metal layer 126 and the insulating layer 128, the front side metal layer 122 is exposed at the bottom of the through hole 1 36, and a short-circuit portion and a surface electrode portion are collectively formed. An electrode structure forming recess 90K was created (see Fig. 56 (b)).
• the laminate 132 was immersed in a plating bath containing nickel sulfamate, and the laminate 132 was subjected to electrolytic plating using the surface-side metal layer 122 as an electrode to form each short-circuit portion.
• the metal was filled in the recess 90K (see Fig. 56 (c)).
• the insulating ⁇ fe sheet 124 was removed by etching (see FIG. 56 (d)).
• the first backside metal layer 126 is etched to form a holding portion, and the second backside metal layer 130 is etched to remove a part thereof, thereby forming the back electrode portion and the supporting portion 92E.
• the insulating layer 128 was etched to divide the insulating layer into respective contact films (see FIG. 56 (e)).
• the support member 2 was bonded to a ring-shaped support member 2 made of silicon nitride having an outer diameter of 22 cm, an inner diameter of 20.5 cm, and a thickness of 2 mm.
• the thickness d of the insulating layer was 36 ⁇ m
• the shape of the surface electrode portion of the electrode structure was a truncated cone
• the diameter of the base end was 48;
• the diameter is 13 m (average value), its protrusion height is 25 ⁇ m
• the holding part is 60 ⁇ m in width, 200 ⁇ m in height, 4 ⁇ m in thickness
• the shape of the short-circuit part is a truncated cone.
• the diameter of one end on the front side is 48 m
• the diameter of the other end on the back side is 90 m
• the shape of the back electrode part is a rectangular flat plate
• the width is 90 m
• the height is 200 ⁇ m
• the thickness is 20 ⁇ m.
• Sheet probe Ul Sheet probe Ul
• Sheet probe U4 Sheet probe U4
• FC1000 commercially available nickel particles manufactured by Westaim
• magnetic core particles were prepared as follows.
• the obtained nickel particles had a number average particle size of 7.4 m, a variation coefficient of the particle size of 27%,
• the BET specific surface area was 0.46 ⁇ 10 3 m 2 Zkg, and the saturation magnetization was 0.6 Wb / m 2 .
• the nickel particles are referred to as magnetic core particles Q.
• the magnetic core particles Q100g were charged into the processing tank of the powder coating apparatus, and 2 L of a 0.32N aqueous hydrochloric acid solution was added thereto and stirred to obtain a slurry containing the magnetic core particles Q.
• the magnetic core particles Q were subjected to an acid treatment by stirring the slurry at room temperature for 30 minutes, and then allowed to stand for 1 minute to precipitate the magnetic core particles Q, and the supernatant was removed.
• the obtained conductive particles had a number average particle size of 7.3 m, a BET specific surface area of 0.38 X 10 3 m 2 Zkg, (mass of gold forming the coating layer) / (magnetic core particles). (Mass of [A]) was 0.3 o
• conductive particles are referred to as "conductive particles (a)".
• a frame plate 31 having a diameter of 8 inches and having 966 openings 32 formed corresponding to the respective electrode regions to be inspected in the test wafer W1 is formed.
• Produced. [0408]
• covar coefficient of linear thermal expansion 5 X 10- 6 ZK
• Each of the openings 32 has a horizontal dimension (horizontal direction in FIGS. 46 and 47) of 3600 ⁇ m and a vertical dimension (vertical direction in FIGS. 46 and 47) of 900 ⁇ m. .
• two openings 32 of the frame plate 31 are formed for one of the integrated circuits L formed on the test wafer and provided for the same integrated circuit L.
• the openings 32 of the frame plate 31 are arranged at a center-to-center distance (vertical direction in FIG. 47) at a pitch of 2000 m.
• a circular air inflow hole 33 is formed at a central position between the vertically adjacent openings 32, and has a diameter of 1000 ⁇ m.
• the addition-type liquid silicone rubber used was a two-part type liquid A and liquid B each having a viscosity of 250 Pa's, and the cured product had a compression set of 5% and a durometer A It has a hardness of 32 and a tear strength of 25 kNZm.
• the properties of the addition-type liquid silicone rubber and the cured product thereof are measured as follows.
• a sheet having a thickness of 2.5 mm was produced by subjecting the addition type liquid silicone rubber to a curing treatment and post-curing under the same conditions as in (ii) above.
• a turret-shaped test piece was prepared by punching from this sheet, and the bow I crack strength at 23 ° C and 2 ° C was measured in accordance with JIS K 6249.
• one opening 32 is closed in the frame plate 31 in accordance with the method described in Japanese Patent Application Publication No. 2002-324600. Placed and fixed and supported on the opening edge of the frame plate 31
• the anisotropic conductive connector 30 was manufactured.
• the curing treatment of the molding material layer was performed at 100 ° C for 1 hour while applying a magnetic field of 2T in the thickness direction by an electromagnet.
• Each of the anisotropic conductive sheets 35 has a width of 6000 ⁇ m, a length of 2000 ⁇ m, and 26 conductive sheets.
• the sections 36 are arranged in a row in the horizontal direction at a pitch of 120 m.Each of the conductive sections 36 has a horizontal dimension of 60 ⁇ m, a vertical dimension of 200 ⁇ m, a thickness of 150 ⁇ m, and a protrusion. Part 3
• the protrusion height of 8 is 25 ⁇ m, and the thickness of the insulating part 37 is 100 ⁇ m.
• a non-connection conductive portion 36 is arranged between the outermost conductive portion 36 in the lateral direction and the opening edge of the frame plate 31.
• Each of the non-connection conductive portions 36 has a horizontal dimension of 60 m, a vertical dimension of 200 m, and a thickness of 150 m.
• anisotropically conductive connector Cl anisotropically conductive connector
• anisotropically conductive connector I-C36 anisotropically conductive connector I-C36
• a circuit board for inspection on which an inspection electrode 21 is formed in accordance with a pattern corresponding to the pattern of the electrode to be inspected in W1 using alumina ceramics (linear thermal expansion coefficient: 4.8 ⁇ 10—so K) as a substrate material. was prepared.
• the inspection circuit board 20 has a rectangular shape with an overall size of 30cm x 30cm, and the inspection electrode has a horizontal dimension of 60 ⁇ m and a vertical dimension of 200 ⁇ m.
• the obtained inspection circuit board is referred to as “inspection circuit board T1”.
• Test 1 insulation between adjacent electrode structures
• the insulation between adjacent electrode structures was evaluated for each of the probe Tl and ⁇ 2, and the sheet probe Ul and U2 as follows.
• the test wafer W1 was placed on a test table, and a sheet-like probe was placed on the surface of the test wafer W1 so that each of the surface electrode portions 16 of the test wafer W1
• the anisotropic conductive connector 30 is placed on the sheet-like probe so that each of the conductive portions 36 is positioned on the back electrode 17 of the sheet-like probe.
• the test circuit board T1 is positioned and positioned on the anisotropic conductive connector 30 such that each of the test electrodes 21 is positioned on the conductive portion 36 of the anisotropic conductive connector 30. Then, the test circuit board T1 was pressed downward with a load of 130 kg (the load applied to one electrode structure was about 5 g on average).
• the test wafer W2 was placed on a test table equipped with an electric heater, and a sheet probe was placed on the surface of the test wafer W2. Each of them is positioned so as to be positioned on the electrode 7 to be inspected on the test wafer W2, and the anisotropic conductive connector 30 is placed on the sheet-shaped probe, and each of the conductive portions 36 is connected to the back surface of the sheet-shaped probe.
• the circuit board T1 for inspection is placed on the anisotropic conductive connector 30 so that each of the test electrodes 21 is placed on the conductive part 36 of the anisotropic conductive connector 30.
• the test circuit board T1 was further pressed downward with a load of 130 kg (the load applied to one electrode structure was about 5 g on average).
• the two test electrodes 21 electrically connected to each other via the sheet probe, the anisotropic conductive connector 30, and the test wafer W2.
• the electrical resistance between the test electrode 21 of the test circuit board T1 and the test electrode 21 of the test wafer W2 is determined by measuring the half of the measured electric resistance value. The resistance was recorded as resistance (hereinafter referred to as “conduction resistance”), and the ratio of measurement points where the conduction resistance at all measurement points was 1 ⁇ or more (hereinafter referred to as “connection failure rate”) was determined.
• operation (1) This operation is referred to as "operation (1)”.
• test table was cooled to room temperature (25 ° C), and the pressurization of the test circuit board T1 was released. This operation is referred to as “operation (3)”. Then, the above operations (1), (2) and (3) were performed as one cycle, and a total of 200 cycles were continuously performed.
• the conduction resistance is 1 ⁇ or more, it is practically difficult to use it for electrical inspection of an integrated circuit formed on a wafer.
• the metal-made frame plate 24 and the ring-shaped support member 2 were subjected to 10 cycles for the sheet-shaped probe P3 and to 1 cycle (125 ° C) for the sheet-shaped probe P4. The evaluation was stopped because peeling occurred on the adhesive surface with the adhesive.

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