WO2002075821A1 - Dispositif luminescent semiconducteur - Google Patents
Dispositif luminescent semiconducteur Download PDFInfo
- Publication number
- WO2002075821A1 WO2002075821A1 PCT/JP2002/002658 JP0202658W WO02075821A1 WO 2002075821 A1 WO2002075821 A1 WO 2002075821A1 JP 0202658 W JP0202658 W JP 0202658W WO 02075821 A1 WO02075821 A1 WO 02075821A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystal
- layer
- gan
- emitting device
- light emitting
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 239000013078 crystal Substances 0.000 claims abstract description 296
- 239000000463 material Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 239000000872 buffer Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 100
- 238000000034 method Methods 0.000 claims description 71
- 238000004381 surface treatment Methods 0.000 claims description 7
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 238000011049 filling Methods 0.000 abstract description 6
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 304
- 229910002601 GaN Inorganic materials 0.000 description 176
- 238000005253 cladding Methods 0.000 description 27
- 229910052594 sapphire Inorganic materials 0.000 description 23
- 239000010980 sapphire Substances 0.000 description 23
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 20
- 238000005530 etching Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000000605 extraction Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000002109 crystal growth method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 2
- 240000009038 Viola odorata Species 0.000 description 2
- 235000013487 Viola odorata Nutrition 0.000 description 2
- 235000002254 Viola papilionacea Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Definitions
- the present invention relates to a semiconductor light-emitting device (hereinafter, also simply referred to as “light-emitting device”), and particularly to a device whose light-emitting layer is made of a GaN-based semiconductor crystal (GaN-based crystal).
- a semiconductor light-emitting device hereinafter, also simply referred to as “light-emitting device”
- GaN-based crystal GaN-based semiconductor crystal
- the basic element structure of a light-emitting diode is to grow an n-type semiconductor layer, a light-emitting layer (including DH, MQW, and SQW structures) and a p-type semiconductor layer on a crystal substrate in order. It has a structure in which an external extraction electrode is formed on each of p-type layers and conductive crystal substrates (such as SiC substrates and GaN substrates).
- FIG. 8 is a diagram showing a configuration example of a device (GaN-based LED) using a GaN-based semiconductor as a material of a light-emitting layer, and a GaN-based crystal layer (n-type G a
- An N-contact layer (also a clad layer) 102, a GaN-based semiconductor light-emitting layer 103, and a p-type GaN contact layer (also a clad layer) 104 are sequentially stacked by crystal growth, and a lower electrode (usually The structure is such that an n-type electrode) 105 and an upper electrode (usually a p-type electrode) 106 are provided.
- the description will be made on the assumption that the mounting is performed with the crystal substrate facing down, and light is emitted upward.
- the upper electrode 106 in FIG. 8 is made to be a transparent electrode so as not to be an obstacle to the outside.
- Various measures have been taken, such as providing a reflective layer and turning it upward.
- the electrodes For light emitted in the vertical direction from the light-emitting layer, it is possible to improve the light extraction efficiency to the outside world by making the electrodes transparent and providing a reflective layer as described above.
- Spreading direction (indicated by a thick arrow in the light-emitting layer 103 in FIG. 8)
- the light is only absorbed and attenuated and disappears in the device, especially in the light emitting layer itself, for example, by repeating reflection on the side wall.
- Such lateral light is confined by upper and lower cladding layers or substrates (sapphire substrate) and upper cladding layer, or by the substrate and upper electrode (further, a coating material outside the device). It is the light that propagates.
- the light propagating in the lateral direction occupies most of the total amount of light generated in the light emitting layer, and may reach 60 ° / 0 as a whole.
- the device structure In flip-chip type LEDs mounted on the board with the board facing upward (light exits through the board), the device structure is such that such lateral light can be reflected in the direction of the board. It is known to form an angle on the side wall of the laminate and use the side wall as a reflection surface toward the substrate. However, it is difficult to cut the four surfaces of a small chip at an angle, which is problematic in terms of cost.
- the light that travels in the vertical direction is repeatedly reflected between the interface between the GaN-based semiconductor layer / sapphire substrate and the interface between the GaN-based semiconductor layer / p-type electrode (or sealing material).
- problems such as standing waves that hinder light extraction efficiency.
- a first object of the present invention is to solve the above-described problems, to direct lateral light generated in the light emitting layer to the outside, and to provide a light emission provided with a novel structure capable of suppressing the generation of the standing wave. It is to provide an element.
- a light-emitting element using InGaN for a light-emitting layer can emit light with high efficiency. This is because the localization of carriers due to fluctuations in the In composition reduces the proportion of carriers injected into the light-emitting layer that are trapped in non-light-emitting centers, resulting in highly efficient light emission. It is explained that it is possible.
- a GaN-based light-emitting diode (LED) or GaN-based semiconductor laser (LD) emits blue-violet light to ultraviolet light of 42 Onm or less
- the material of the light-emitting layer is InGaN (1).
- the structure related to light emission is a single quantum well structure (a so-called DH structure is included in the active layer because it is thin) or a multiple quantum well structure.
- the upper limit of the wavelength of ultraviolet light is shorter than the short wavelength end of visible light (380 ⁇ ! ⁇ 400 nm), and the lower limit is around l nm (0.2 nm ⁇ 2 iim).
- ultraviolet light including blue-violet light of 420 nm or less emitted by InGaN having an In composition of 0.15 or less is referred to as ultraviolet light, and a semiconductor light-emitting element that emits such ultraviolet light is referred to as an ultraviolet light-emitting element.
- the wavelength of ultraviolet light that can be generated by G a N is 365 nm. Therefore, in the case of a ternary system in which InG & essentially contains the 1n composition and does not contain the A1 composition, the lower limit of the wavelength of ultraviolet light that can be generated is a wavelength longer than 365 nm.
- the ultraviolet light-emitting device has a shorter wavelength, so that it is necessary to reduce the In composition of the light-emitting layer. For this reason, the effect of localization due to the fluctuation of the In composition described above is reduced, and the ratio of trapping in the non-radiative recombination center is increased. As a result, a high output is not obtained. Under such circumstances, the density of dislocations that cause non-radiative recombination centers has been actively reduced.
- the light-emitting layer (well layer) is sandwiched between cladding layers (barrier layers) made of a material having a larger band gap.
- cladding layers (barrier layers) made of a material having a larger band gap.
- the cladding layer sandwiching the light emitting layer uses A1Gan with a large band gap.
- the barrier layer When a quantum well structure is constructed, the barrier layer must be thick enough to cause a tunnel effect, and is generally about 3 to 6 nm.
- Figure 9 shows In. .. 5 G a. , Was 95 N and the material of the light-emitting layer, a diagram showing an example of a conventional light emitting Daio de, on a crystal substrate S 1 0, via the buffer layer 2 0 1, n-type G a N contact layer 2 0 2, n-type A 1 a. 9 N cladding layer 203, In 0 .. 5 G a 0, 95 N well layer (light emitting layer) 2 0 4, p-type A 1 0. 2 G a 0 . 8 N cladding layer 2 0 5, p-type G a N contact layer 2 0 6 sequentially grown
- the device structure has a lower electrode (usually n-type electrode) P 10 and an upper electrode (usually p-type electrode) P 20.
- the ELO method requires a method of growing the underlying GaN layer, forming a mask layer, and re-growing, and requires many times of growth, resulting in an extremely large number of processes.
- the presence of the regrowth interface reduces the dislocation density, but has the problem that the output does not improve easily.
- the present inventors and others studied the conventional device structure in order to make the material of the light-emitting layer InGaN and to increase the output of ultraviolet light. It was found that this was the basis for giving strain to the layer due to the lattice constant difference.
- Mg diffuses from the p-type layer provided above to the light-emitting layer and forms a non-light-emitting center, so that a high-power ultraviolet light-emitting device cannot be obtained. I understood that there was.
- a second object of the present invention is to achieve high output by optimizing the structure of the device when using InGaN as the material of the light emitting layer of the light emitting device of the present invention and emitting ultraviolet light. It is also necessary to achieve a longer life.
- Asperities are processed on the surface of the first crystal layer, and a second crystal layer made of a semiconductor material having a different refractive index from the crystal layer is formed thereon via a buffer layer or directly.
- a semiconductor light-emitting device having a device structure in which a semiconductor crystal layer including a light-emitting layer is laminated thereon, wherein the semiconductor light-emitting device is grown by embedding the irregularities.
- the first crystal layer is a crystal substrate, and the second crystal layer is grown while forming a substantially facet structure from the uneven surface processed on the surface of the crystal substrate. ).
- the irregularities processed on the surface of the crystal substrate are irregularities exhibiting a stripe pattern, and the longitudinal direction of the stripe is the ⁇ 11-20> direction of the GaN-based semiconductor growing by embedding it. Or the semiconductor light-emitting device according to the above (3), which has a ⁇ 111> direction.
- the first crystal layer is a crystal substrate, and the second crystal layer is grown on the irregularities processed on the surface of the crystal substrate by embedding the irregularities via a low-temperature buffer layer.
- the optical layer has a quantum well structure composed of a well layer made of InGaN and a barrier layer made of GaN, and all layers between the quantum well structure and the low-temperature puffer layer are Ga.
- a first GaN-based semiconductor crystal is grown on the surface of a crystal layer serving as a basis for crystal growth so as to form irregularities, and covers at least a part of the irregularities to form a first GaN-based semiconductor crystal.
- a second GaN-based semiconductor crystal having a different refractive index from the semiconductor crystal is grown, and a third GaN-based semiconductor crystal is grown until the irregularities are flattened.
- a semiconductor light emitting device having an element structure in which a semiconductor crystal layer including a light emitting layer is stacked thereon.
- a structure or surface treatment that limits the size of the crystal growth region is applied to the surface of the crystal layer that forms the basis for crystal growth, and this restriction causes the first GaN-based semiconductor crystal to have a substantially facet structure.
- a structure or surface treatment that dimensionally limits the crystal growth area is provided on the surface of the crystal layer that is the basis for crystal growth, or on the surface of the crystal layer that is the basis for crystal growth.
- a second GaN-based semiconductor crystal is grown so as to cover at least the protrusions of the first GaN-based semiconductor crystal in the form of a film.
- a GaN-based semiconductor crystal is grown until the recess is planarized, and has a device structure in which a semiconductor crystal layer including a light-emitting layer is stacked thereon, and a second GaN-based semiconductor crystal has a multilayer structure.
- the light emitting layer is composed of a well layer made of InGaN and a barrier layer made of GaN.
- the thickness of the barrier layer is 6 ⁇ !
- the unevenness is an unevenness exhibiting a stripe pattern, and the longitudinal direction of the stripe is the ⁇ 111> 20 direction of the first GaN-based semiconductor crystal, or ⁇ 1 ⁇
- FIG. 1 is a schematic diagram showing a structural example of a light emitting device according to the present invention. The hatching is applied to a part to indicate the boundary of the area (the same applies to the following figures).
- FIG. 2 is a schematic diagram showing an example of a crystal growth method for forming a concave-convex refractive index interface in the embodiment (I) of the present invention.
- FIG. 3 is a schematic diagram showing a method for processing the surface of the crystal substrate into unevenness having a slope in the embodiment (I) of the present invention.
- FIG. 4 is a schematic diagram showing an example of a crystal growth method for forming a concave-convex refractive index interface in the embodiment (II) of the present invention.
- FIG. 5 is a schematic view showing another example of the crystal growth method for forming the uneven refractive index interface in the embodiment (II) of the present invention.
- FIG. 6 is a schematic view showing a variation of the crystal growth method shown in FIGS.
- FIG. 7 is a schematic view showing another example of the crystal growth method for forming the uneven refractive index interface in the embodiment (II) of the present invention.
- FIG. 8 is a schematic diagram showing the structure of a conventional GaN-based light emitting device.
- FIG. 1 is a schematic view showing an example of a conventional light emitting diode using 95 N as a material of a light emitting layer.
- the light emitting device according to the present invention is the most preferable form of the LED. Further, the material system is not limited. As described below, the light emitting device will be described by taking as an example an LED (GaN-based LED) using a GaN-based material in which the utility of the present invention is particularly remarkable. .
- the light-emitting element has an uneven refractive index interface provided below the light-emitting layer, and improves the light extraction efficiency by its operation and effect.
- the light-emitting element has the above aspect.
- a concave and convex refractive index interface is formed by processing a concave portion in a crystal substrate and embedding the concave portion in a semiconductor crystal (particularly, a GaN-based crystal).
- a GaN-based crystal is grown into irregularities and is embedded with another GaN-based crystal to form an irregular refractive index interface.
- FIG. 1A is a diagram showing a GaN-based LED as an example of the structure of the light emitting device according to the embodiment (I).
- the surface of a first crystal layer hereinafter, also referred to as a “first layer”.
- a second crystal layer hereinafter, also referred to as a “second layer” made of a material having a different refractive index from the crystal layer is formed on the first crystal layer 2 via a buffer layer. Or, it grows by directly filling the irregularities. As a result, interfaces having different refractive indices are uneven.
- a semiconductor crystal layer (n-type contact layer 3, light-emitting layer A, p-type contact layer 4) is stacked thereon by crystal growth, and electrodes Pl and P2 are formed to form an element structure.
- the device structure shown in the figure is a simple DH structure.However, a dedicated contact layer, a dedicated cladding layer, etc. are provided, and the light emitting layer may be an SQW structure or an MQW structure. It may have a structure.
- the light propagating in the lateral direction generated in the light emitting layer A is affected by the convex refractive index interface la, and a kind of mode conversion occurs (the light traveling direction is changed to the surface light emitting direction by diffuse reflection). ), Will be going in a direction other than the horizontal direction.
- the amount of light going to the exit surface increases, the light absorption layer inside the device decreases, and as a result, the light extraction efficiency improves.
- the GaN-based semiconductor layer region formed by epitaxy on the substrate is regarded as a [waveguide for propagating light in the lateral direction], and along the waveguide, By forming a concave-convex refractive index interface at a position that can affect the guided light, a kind of mode conversion (or diffuse reflection) is caused to direct the light in another direction. I am trying to do.
- the thickness of the light emitting layer is about 10 nm to 100 nm in a normal DH structure active layer. Lateral light propagates not only in such a thin active layer but also as a wide distribution of waves reaching the crystal substrate. Therefore, as shown in Fig. 1 (a), if the uneven refractive index interface 1a is formed within the range of the lateral light distribution, the transverse light wave is affected, and a kind of mode conversion (Or give rise to diffuse reflections) some of the light can be directed in other directions, thus increasing the amount of light going out to the outside world.
- the unevenness also functions as a reflection surface for irregularly reflecting light emitted from the light emitting layer toward the unevenness itself.
- these irregularities also have the function of lowering the vertical reflectivity of the interface between the GaN-based semiconductor layer and the sapphire substrate, suppressing the generation of standing waves in the vertical direction and allowing more light to enter the sapphire substrate.
- the amount of light extracted from the sapphire substrate can be increased, and the light extraction efficiency can be improved particularly when light is extracted from the substrate side.
- the irregularities processed on the first layer surface are irregularities formed by the first layer surface itself.
- S i 0 2 of which are used in conventional lateral growth method
- the mask layer of which is different from the unevenness formed on the flat surface.
- the GaN-based crystal layer is grown without using a mask, there is no problem of impurity contamination and degradation of crystal quality due to decomposition of the mask.
- the arrangement pattern of the unevenness as a whole may be any as long as it can affect the wave motion of the light in the horizontal direction, and dot-shaped concave portions (or convex portions) are arranged on the surface (reference plane) of the first layer. It may be a pattern or a stripe-shaped uneven pattern in which linear or curved concave grooves (or convex ridges) are arranged at regular intervals. A pattern in which the convex ridges have a lattice shape can be said to be a pattern in which angular concave portions are arranged. Among these, the stripe-shaped uneven pattern that can strongly influence the light in the horizontal direction.
- the cross-sectional shapes of the irregularities are rectangular (including trapezoidal) waves as shown in Fig. 2 (a), triangular waves and sine-carp shapes as shown in Fig. 3 (c), and these are combined. And those having a wavy shape.
- the concave and convex are preferably within a specific distance from the light emitting layer.
- This distance is, as indicated by k in FIG. 1 (a), about 0.5 ⁇ m to 20 m, particularly 1 ⁇ m to 10 111 3 ⁇ 4 ′′, which is the upper surface of the substrate in a normal LED. Therefore, the distance between the element and the lower surface of the light-emitting layer is included in this range, so that the crystal structure of the element is used as the first layer, and irregularities are formed on the upper surface, and the second layer is grown so as to bury the element. If so, the irregularities sufficiently affect the lateral light.
- the material system of the light-emitting element may be a conventionally known material such as a GaAs-based material, an InP-based material, or a GaN-based material, but the GaN-based light-emitting device has a major problem of reducing the dislocation density of crystals.
- the usefulness of the present invention is most remarkable in (at least the material of the light emitting layer is a GaN-based semiconductor).
- reducing the dislocation density of GaN-based crystals is an essential prerequisite for device formation.
- the present invention provides a growth method using a concavo-convex structure useful for reducing the dislocation density of a GaN-based crystal as described below.
- the concavo-convex structure is defined as a concave portion of the refractive index interface. Therefore, the usefulness of the convexity becomes higher than when the irregularities are formed only for the purpose of the refractive index interface.
- a GaN crystal growth method using this uneven structure will be described.
- the GaN-based crystal growth method using the uneven structure As shown in Fig. 2 (a), the surface of the crystal substrate (first layer) 1 is processed into unevenness 1a, and as shown in Fig. 2 (b), By growing GaN-based crystals 21 and 22 from the concave and convex portions while forming a substantially faceted structure, as shown in FIG. 2 (c), the GaN-based crystals 21 And the growth is achieved by filling the irregularities.
- the growth while substantially forming the facet structure means growth including growth similar to the growth of the facet structure described later (for example, growth while forming irregularities in the thickness direction).
- the facet growth method is called.
- a surface on which a facet surface can be formed from the beginning of crystal growth is provided in advance by processing irregularities on the surface of a crystal substrate in which even a buffer layer or the like is not formed.
- the feature is that it is kept.
- the concave and convex surfaces defined by mutual steps are used for vapor phase growth of GaN-based crystals on this surface. And By making both the concave and convex faces that can grow the facet structure, as shown in Fig. 2 (b), crystal growth that exhibits a convex shape from both the concave and convex faces occurs at the initial stage of growth.
- dislocation lines extending in the C-axis direction from the crystal substrate are bent laterally on the facet plane (the slopes of crystals 21 and 22 shown in Fig. 2 (b)), and do not propagate upward. Then, as shown in Fig. 2 (c), when the growth is continued and the growth surface is flattened, the vicinity of the surface becomes a low dislocation density region with reduced dislocation propagation from the substrate.
- a high-temperature GaN film is grown on a sapphire C-plane substrate via a low-temperature buffer layer such as A1N by MOVPE or the like.
- a low-temperature buffer layer such as A1N by MOVPE or the like.
- the growth proceeds so that a stable C-plane appears at a low growth rate, and the sapphire substrate is flattened. This is because the lateral growth rate is faster than the stable C-plane growth rate.
- the longitudinal direction of the irregularities is a stripe shape parallel to the ⁇ 11 ⁇ 20> direction. If there is, the growth in the ⁇ 111> direction is restricted, so the growth rate in the C-axis direction increases, and the crystal growth rate is slow and stable. Facets may form.
- the dimensional limitation of the growth region for the lateral growth is performed by performing unevenness processing on the growth surface of the substrate.
- the crystal planes and crystal orientations described are all the crystal planes and orientations of the GaN crystal grown on the crystal substrate.
- the fact that the second layer substantially fills the recesses means not only a completely filled state, but also a filling that forms an effective uneven refractive index interface capable of achieving the object of the present invention.
- a gap may be formed at a portion where the crystal grown from the HD portion and the crystal grown from the projection merge, but this is advantageous in that a change in the refractive index can be obtained.
- the lower surface of the second layer grown on the concave portion enters the concave portion to the extent that the object of the present invention can be achieved, and forms an effective uneven refractive index interface. Just do it.
- the facet growth method for example, in Japanese Patent Application Laid-Open No.
- a gallium nitride-based semiconductor is grown so that the crystal substrate is provided with irregularities and the ⁇ portion is left as a cavity.
- a method is disclosed.
- the concave portion is not filled and is left as a cavity, the refractive index interface (that is, the lower surface of the second layer) as viewed from the second layer is not sufficiently uneven.
- the effect of mode modulation on light in the horizontal direction is small.
- the presence of the cavity is disadvantageous in dissipating the heat generated in the light emitting layer to the substrate side.
- the propagation of dislocations is not actively controlled, the dislocations propagate above the protrusions, and the effect of reducing the dislocation density is insufficient.
- the crystal substrate used in the facet growth method is a substrate serving as a base for growing various semiconductor crystal layers, in which a buffer layer and the like for lattice matching have not been formed yet.
- Preferred crystal substrates include sapphire (C-plane, ⁇ -plane; R-plane), SiC (6H, 4H, 3C), GAN ⁇ A1N, Si, spinel, ZnO, GaAs, NGOs, etc. can be used, but other materials may be used if the purpose of the invention is met.
- the plane orientation of the substrate is not particularly limited, and may be a just substrate or a substrate having an off angle.
- the convexity used in the facet growth method is, as described above, a convexoconcave shape capable of generating a facet structure growth from both the tetrahedral and convex surfaces, and a convexoconcave shape capable of acting on lateral light generated in the light emitting layer.
- a convexoconcave shape capable of generating a facet structure growth from both the tetrahedral and convex surfaces
- a convexoconcave shape capable of acting on lateral light generated in the light emitting layer.
- Preferred patterns of the irregularities and preferred specifications of the irregularities will be described below.
- the arrangement pattern of the concavities and convexities used in the facet growth method may roughly refer to the concavities and convexities that can affect the above-described lateral light wave, in which dot-shaped concave parts (or convex parts) are arranged. And a stripe-shaped uneven pattern in which linear or curved concave grooves (or convex ridges) are arranged at regular intervals.
- the cross-sectional shape of the concave-convex shape is rectangular (including trapezoidal) wavy, triangular wavy, sine-curved, and the like, and the pitch is not necessarily required to be constant as described above.
- a stripe-shaped concavo-convex pattern in which linear or curved concave grooves (or convex ridges) are arranged at regular intervals can simplify the production process and facilitate the production of the pattern. As described above, this is preferable because the influence on the light in the horizontal direction is large.
- the longitudinal direction of the stripes may be arbitrary.
- the lateral growth When dimensional restrictions are applied to the surface, oblique facets such as the ⁇ 1-101 ⁇ plane are likely to be formed. As a result, dislocations propagated in the C-axis direction from the substrate side are bent laterally on the facet surface and are difficult to propagate upward, which is particularly preferable in that a low dislocation density region can be formed.
- the same effect as described above can be obtained by selecting a growth condition in which a pseudo facet surface is easily formed.
- the cross section as shown in Fig. 2 (a) has a rectangular wave shape, and the facet growth method and preferable dimensions of the unevenness that can effectively affect the direction of light in the lateral direction are as follows.
- the width W1 of the concave groove is preferably 0.5 m to 20 m, particularly preferably 1 m to 10 m.
- the width W2 of the projection is 0.5 it! ⁇ 20 Aim, particularly preferably 1 m to 10 m.
- the amplitude of the unevenness (depth of the concave groove) d is preferably 0.05 to 5 m, particularly preferably 0.2 to 3 ⁇ m.
- the facet plane bends the propagation of dislocations.
- the crystal units 21 and 22 grown from each unit reference plane are completely formed without a flat portion on each top. This is a mountain shape (a triangular pyramid or a long roof like a mountain range) where both facets intersect at the top. With such a facet surface, almost all dislocation lines inherited from the base surface can be bent, and the dislocation density immediately above the dislocation line can be further reduced.
- the facet surface formation area can be controlled not only by combining the widths of the concavities and convexities but also by changing the depth d of the concavities (the height of the protruding parts) d.
- Examples of the method of processing the unevenness include a method of forming a pattern according to the desired unevenness using a normal photolithography technique, and performing an etching process using the RIE technique or the like to obtain the desired unevenness. You.
- HVPE, MOVPE, MBE, etc. are good methods for growing a semiconductor crystal layer on a substrate.
- the HVPE method is preferable, but when forming a thin film, the MOVP E method or MBE method is preferable.
- the formation of the facet plane depends on the growth conditions during crystal growth (gas species, growth pressure, growth Temperature, etc.). When the partial pressure of NH 3 is low, the facet of ⁇ 1-101 ⁇ face is apt to appear in low pressure growth.
- the facet shape can be controlled by the growth condition.
- the facet shape may be properly used depending on the purpose.
- the GaN crystal when growing a GaN-based crystal from the irregularities formed on the crystal substrate, the GaN crystal may be directly grown on the crystal substrate, or a known low-temperature buffer layer such as GaN, .AIN. Alternatively, a known buffer layer may be interposed.
- a resist R having a rectangular cross-sectional shape is formed in a target pattern such as a stripe shape or a lattice shape, and the gas is etched.
- a material for the resist it is preferable to use a material that can undergo the gas etching.
- the exposed area of the GaN substrate is eroded from the beginning, while the thin shoulder portion of the resist is It is consumed as the etching proceeds, and the etching of the GaN crystal starts with a delay.
- the cross section becomes uneven as a triangular wave. Les The thickest portion of the dist may be removed by the gas etching, but may be left, and in that case, it may be removed using a resist-specific removing agent that does not damage the GaN crystal. Further, it is more effective to finally perform the etching process of the convex portion.
- Preferred dimensions of the unevenness having a slope as shown in FIG. 3 (b) are as follows.
- the pitch of the unevenness is preferably 2111 to 40111, particularly preferably 2 / m to 20 ⁇ .
- the amplitude of the unevenness is 0.05! To 5 ⁇ , particularly preferably 0.2 / zm to 3 ⁇ .
- the arrangement pattern of the unevenness having a slope is a pattern in which dot-like concave portions (or convex portions) are arranged, and linear or curved concave grooves (or convex ridges) are arranged at regular intervals.
- a stripe-shaped uneven pattern arranged in a matrix is preferable.
- the growth of the second layer 2 is started from the entire surface of the irregularities, and is grown until the irregularities are completely buried.
- the side wall of the groove has a pseudo facet surface
- dislocation lines are bent with the facet surface as an interface, and a low dislocation density portion is formed in the upper layer. The effect of this is that it can be obtained.
- such irregularities not only act on light in the lateral direction, but also act strongly as a reflecting surface, which is a preferred embodiment.
- etching method is not limited, gas etching using RIE (Reactive Ion Etching) using an etching gas containing chlorine does not leave damage on the crystal surface when the first layer is a GaN crystal substrate. It is preferred.
- RIE Reactive Ion Etching
- FIG. 1B is a diagram showing a GaN-based LED as an example of the structure of the light emitting device according to the above-described embodiment ( ⁇ ), and shows a crystal layer (crystal substrate in FIG.
- the first GaN-based crystal hereinafter, “ The first crystal 10) grows so as to form irregularities while forming a facet structure, and at least convex portions of the irregularities (in the example of FIG. 4, the first crystal 10 itself).
- a second GaN crystal (hereinafter, also referred to as “second crystal”) 20 having a different refractive index from the first GaN crystal has grown.
- second crystal also referred to as “second crystal”
- an uneven refractive index interface is formed, and the same operation and effect as in the above aspect (I) can be obtained.
- the composition is changed to another GaN-based crystal to change the refractive index, that is, the first crystal is flattened only by the first crystal. It is important not to grow to.
- the change in refractive index (change in composition) may be a step-like change or a continuous change as seen in a distributed index waveguide.
- the method for growing the first crystal in the form of irregularities is not limited, but as the irregularities which can suitably achieve the object of the present invention by growing while substantially forming a facet structure or forming a pseudo facet structure. Can grow.
- the irregularities referred to here include not only wavy irregularities in which the convex portions are continuously adjacent to each other, but also, as shown in FIGS. 5 (a) to (c), convex first crystals 10 are discretely arranged. However, other substances may be present between them as recesses.
- the shape of the unevenness due to the facet growth of the first crystal is not limited.
- a trapezoidal shape having a flat portion at the top of the convex portion may be used.
- the crystal unit grown from each unit reference plane has a mountain shape in which both facet planes completely intersect at the top without having a flat part at each top. Triangular pyramids or mountain-shaped roofs) are preferred.
- any method may be used as long as the first crystal can be made uneven, and when the first crystal has unevenness, the second crystal is covered so as to cover the unevenness. 'It is sufficient if it is grown and constitutes an uneven refractive index interface.
- a method of growing the GaN crystal irregularly there is a method of facet growth (or (Similar growth) is preferred.
- facet growth or (Similar growth) is preferred.
- a method of dimensionally limiting the crystal growth region on the surface of the crystal layer on which the crystal growth is based there is a method of dimensionally limiting the crystal growth region on the surface of the crystal layer on which the crystal growth is based.
- a method of processing irregularities on the surface of a crystal layer, which is the basis of crystal growth, as in the facet growth method described in detail above (Fig. 1 (b), Fig. 4, Fig. 5 (a), Fig. 6, Fig. 7)
- a method of providing a mask pattern that prevents the growth of GaW-based crystals in a specific region on the surface of the crystal layer that is the basis for crystal growth (Fig. 5 (b))
- the crystal layer as the basis for crystal growth There is a method of performing a surface treatment on a specific region of the surface to suppress the growth of GaN crystal (FIG. 5 (c)).
- the first crystal grows to have irregularities.
- the method (1) is not only a method of substantially filling the concave and convex concave portions with the GaN-based crystals 10 and 20 based on the facet growth method as shown in FIG. 4, but also a method shown in FIG. 5 (a).
- the first crystal 10 may be facet-grown exclusively from only the upper surface of the convex portion, and then switched to the second crystal 20, lateral growth may be performed on the concave portion, and the concave portion may be left as a cavity.
- the unevenness having the slope described as an example in FIG. 3 may be used. This means that, as shown in FIG. 7, the first crystal 10 is grown on the uneven surface having a slope on the crystal substrate S, and pseudo facet growth is caused, and then the second crystal 20 is switched. It is an aspect.
- a known pattern may be referred to.
- a stripe pattern, a grid pattern, and the like are important, and the direction of the boundary between the mask region and the non-mask region is particularly important. is important. If the boundary between the masked and unmasked regions is a straight line extending in the ⁇ 1-100> direction of the growing GaN-based crystal, the lateral growth rate will be faster. Conversely, the boundary between the masked and non-masked areas is set to ⁇ 11 > If it is a straight line in the direction, diagonal facets such as ⁇ 1—101 ⁇ plane are likely to be formed.
- the preferred facet growth for the present invention is obtained.
- the method (3) for example, there is a method described in JP-A-2000-277435, in which a residue of Si ⁇ ⁇ 2 is used as a mask. As a result, the same function and effect as those of the above-described mask are exhibited, and it is possible to grow the GaN-based crystal 10 in a facet shape in a convex shape from an untreated region.
- the combination of the first crystal grown in a convex shape and the second crystal covering the first crystal includes (AlGaNZGaN) and (A1InGaN). / G a N). Since A 1 GaN exists below GaN as the first crystal, the GaN of the second crystal corresponds to the high refractive index core referred to in the optical waveguide, and the A 1 GaN of the first crystal Corresponds to a clad having a lower refractive index than this, and the operation and effect of the present invention are further enhanced, and also effectively act as a reflection layer.
- a GaN-based crystal eg, GaN that embeds concaves and convexes can be either undoped or n-type.
- the above (1)-(3) are various methods for facet growth of GaN-based crystals. Force In either method, the third GaN-based crystal for flattening the irregularities is the second crystal.
- the second crystal may be a crystal different from the second crystal (including the first crystal) (the second crystal may be continuously grown until flattened). Further, the third GaN-based crystal may be changed to a multilayer.
- the third embodiment of the GaN-based crystal there is a common parallax that changes the composition of the GaN-based crystal in a multilayered manner during or after growth of the facet structure.
- this variation is A description will be given of an example of forming unevenness by a growth method.
- the second crystal 20 covering the first crystal 10 grows as it is until the unevenness is flattened, but in the variation, as shown in FIG. 4 (b), one crystal (e.g., GaN) 10 to cover the second crystal (e.g., a l GaN) and 20 membranous, further refractive index different other G a N type crystals (for example, G a N) 2 0 a flat Growing up to Further, in the example of FIG. 4 (c), the second crystal 20 is grown so as to cover the first crystal 10 in a film shape, and this is further covered by the first crystal 20a and the second crystal 20b in this order.
- GaN-based crystal films having different refractive indices form a multilayer structure.
- the reflectivity can be further improved.
- the plug reflection layer may be formed as a superlattice structure formed of a pair of A 1 GaN / GaN by designing the film thickness to be optimal for the emission wavelength.
- a multilayer structure there is no limitation on the number of layers of the film, and the structure in which a single-layer film is interposed as shown in FIG. 4 (b) is changed to a multilayer (5 pairs to 100) as shown in FIG.
- the structure may change to a pair.
- FIG. 6 shows the state of the uneven growth of a multilayer composed of a GaN-based crystal.
- the composition may be changed from the initial growth stage when growing on the uneven surface formed on the substrate S.
- hatching is applied to distinguish that the GaN-based crystals having different refractive indices are grown in a multilayer shape and become uneven.
- the height of the convex portion is 0.05! ⁇ 10 ⁇ , especially 0.! Those having a value of about 5 / zm are preferred.
- the pitch of the uneven refractive index interface is approximately 1 ⁇ ! In the conventionally known lateral growth method. ⁇ 10 / m, especially about 1 ⁇ m-5 ⁇ m It is.
- the pitch of the concavities and convexities obtained by the facet growth method is the same as in the above embodiment (I).
- the difference between the refractive index of the first layer (first crystal) and the refractive index of the second layer (second crystal) differs from the light emitting layer.
- the wavelength of the emitted light is preferably at least 0.01, particularly preferably at least 0.05.
- the magnitude relationship between the refractive indices of the two is preferably that the first layer (first crystal) ⁇ the second layer (second crystal), whereby the second layer (second crystal) is formed of an optical waveguide.
- the first layer (first crystal) corresponds to a clad having a lower refractive index than the above, and the operation and effect of the present invention are further enhanced.
- InGaN is equal to or less than 111 composition 0.15.
- asperities can be reduced and dislocations can be reduced to form a good crystal.
- the light emission output is significantly improved.
- the dislocation density which causes deterioration, is reduced, resulting in longer life.
- the material of the GaN-based crystal layer formed on the unevenness of the substrate is limited to GaN crystal.
- an MQW structure in which an InGaN crystal layer having a composition capable of generating ultraviolet light is used as a well layer is formed, and is used as a light emitting layer.
- the ⁇ -type cladding layer is composed of GaN, and there is no A 1 GaN layer between the light-emitting layer and the low-temperature buffer layer.
- the composition is such that ultraviolet rays can be generated.
- GaN is used as the n-type cladding layer material instead of the conventionally required A1GaN.
- the hole confinement can be sufficiently achieved with respect to the ultraviolet light emitting layer. This is because the effective mass of holes injected from the p-type layer is heavy, so the diffusion length is short and n-type It is considered that the reason is that the clad layer does not sufficiently reach. Therefore, it can be said that the n-type GaN layer existing as a lower layer of the In GaN light-emitting layer in the structure of the present invention does not strictly correspond to a conventional clad layer.
- the distortion of the InGaN light-emitting layer is reduced by eliminating the A1Gan which was present as a cladding layer between the crystal substrate and the light-emitting layer and forming a Gan layer.
- the well structure When the light-emitting layer (well layer) is strained, the well structure is tilted due to the generation of a piezo electric field due to the strain, and the overlap of the electron and hole wave functions is reduced. As a result, the recombination probability of electrons and holes decreases, and the light emission output decreases. In order to avoid this, attempts have been made to cancel the piezo electric field by doping Si into the MQW structure, but this is not a preferable method because it causes a drop in crystallinity due to doping. As described above, by eliminating the n-type A 1 G a N layer, there is no such fear and high output can be obtained.
- the InGaN emission layer has reduced dislocation density and reduced distortion. As a result, the light emission output and the device life are sufficiently improved.
- the material of the barrier layer in the quantum well structure of the light emitting layer is limited to GaN. This eliminates the AlGaN layer from between the well layer and the low-temperature buffer layer, suppresses the distortion of the well layer, and achieves higher output and longer life.
- a 1 GaN was used for the barrier layer and the cladding layer in consideration of confinement of carriers in the well layer.
- the thickness of the barrier layer in the MQW structure is 6 nm to 30 ⁇ , preferably 8 nm to 30 nm, particularly preferably 9 nn! Limited to ⁇ 15 nm.
- the thickness of the barrier layer in the conventional MQW structure is 3 nm to 7 nm.
- the barrier layer When the barrier layer is made thicker in this way, the wave functions do not overlap, and a more SQW structure is stacked rather than an MQW structure, but a sufficiently high output is achieved.
- the barrier layer exceeds 3 O nm, holes injected from the ⁇ -type layer are trapped by non-emission center dislocation defects in the GaN barrier layer before they reach the well layer, and light is emitted. It is not preferable because the efficiency is reduced.
- the increased thickness of the barrier layer makes it difficult for the well layer to be damaged by heat or gas when growing the layer above the barrier layer, thereby reducing the damage.
- the dopant material (Mg ) Is diffused into the well layer, and the effect of reducing the strain on the well layer is also obtained.
- Example An example in which a GaN-based LED having a concave-convex refractive index interface according to the above embodiments (I) and (II) is actually manufactured will be described below.
- Patterned pattern jungle of photoresist on C-plane sapphire substrate (width 2 ⁇ , period 4 / zm, stripe orientation: The longitudinal direction of the stripe is ⁇ 11-20> for the GaN crystal growing on the substrate. Direction), and etched by a RIE device to a depth of 2 ⁇ m so as to have a rectangular cross section. As shown in FIG. 2 (a), a substrate having a surface with unevenness in a striped pattern was obtained. At this time, the aspect ratio of the cross section of the stripe groove was 1.
- the substrate was mounted on a MOVP E device, and the temperature was raised to 110 ° C in an atmosphere containing nitrogen gas as a main component, and thermal cleaning was performed. The temperature was lowered to 500 ° C, and trimethylgallium (hereafter, TMG) was used as the group III material and ammonia was used as the N material to grow a 30-nm-thick GaN low-temperature buffer layer. Then the temperature is 1000. The temperature was raised to C, and TMG and ammonia were flowed as raw materials, and silane was flown as a dopant to grow an n-type GaN layer (contact layer). As shown in Fig.
- TMG trimethylgallium
- the GaN layer grows from the top of the protrusion and the bottom of the recess as a ridge-like crystal with a cross section and a facet, and then in the recess. It was a growth that buried the whole without forming a cavity.
- a GaN crystal was grown from the upper surface of the sapphire substrate to a thickness of 5 ⁇ . In order to obtain a buried layer with a flat top surface, a thick film growth of 5 zm was required. Subsequently, an n-type A 1 GaN cladding layer, an In GaN light-emitting layer (MQW structure), a p-type A 1 GaN cladding layer, and a p-type GaN contact layer are formed in this order. A 370 nm UV LED epi-substrate was used, and etching, electrode formation, and element isolation were performed to expose the n-type contact layer, and the LED element was fabricated.
- an ultraviolet LED chip was formed under the same conditions as above except that no stripe-shaped irregularities were formed on the sapphire substrate (that is, a low-temperature buffer layer was formed on a flat sapphire substrate).
- the element structure was formed via the above), and the output was measured. The results of these measurements are as described below.
- Comparative Example 2 has a known configuration in which a mask is buried at a stretch with the same composition without changing the composition during growth of the facet structure, and has no uneven refractive index interface due to the growth of the facet structure. This is significantly different from the embodiment (II) of the invention (particularly, FIG. 5 (b)).
- a C-plane sapphire substrate having the same specifications as in Example 1 was loaded into a MOVP E device, and heated to 1100 ° C in a nitrogen gas main component atmosphere to perform thermal cleaning. 500 temperature. The temperature was lowered to C, and TMG was flown as a group III raw material and ammonia was flown as an N raw material to grow a 30-nm-thick GaN low-temperature buffer layer.
- the temperature was increased to 1000 ° C, and TMG and ammonia were flowed as raw materials, and silane was flown as a dopant, to grow an n-type GaN layer to about 2 ⁇ .
- the substrate is removed from the MOVPE apparatus and striped pattern jungle of photoresist (width 2 ⁇ ⁇ , period 4 // m, stripe orientation: the longitudinal direction of the stripe is ⁇ 11-20> direction for GaN crystal) performed, it was deposited S i 0 2 having a thickness of 10 0 nm by an electron beam evaporator. Photoresist using a technique called lift-off To obtain a stripe-like S io 2 mask to remove the door.
- the wafer was loaded into a MOVPE apparatus, and an n-type GaN crystal contact layer was grown.
- the growth conditions were almost the same as in Example 1.
- the growth was performed until the buried surface became flat.
- Embedding required the growth of a Gn crystal with a thickness of about 5 m in the C-axis direction.
- an n-type A 1 GaN cladding layer, an In GaN light-emitting layer (MQW structure), a p-type A 1 GaN cladding layer, and a p-type GaN contact layer are sequentially formed. It was used as an ultraviolet LED epi-substrate, and etching, electrode formation, and element separation were performed to expose the n-type contact layer.
- the temperature was raised to 1000 ° C, TMG and ammonia were flowed as raw materials to grow a GaN layer of about 100 nm, and then trimethylaluminum (TMA) was added to the group III raw materials to continue growth.
- TMG trimethylaluminum
- l GaN was grown.
- the growth of the A 1 G aN / G aN layer starts at the top of the projection and at the bottom of the depression, and forms After growing as a ridge-like crystal containing the facet plane, it was grown without forming cavities in the four parts.
- n-GaN crystals contact layers
- An N-contact layer was formed in order and used as an ultraviolet LED epi-substrate with an emission wavelength of 370 nm. Further, etching to expose an n-type contact layer, electrode formation, and element isolation were performed to obtain an LED element.
- an uneven facet structure made of a GaN crystal was formed by the facet growth method, and the facet structure was formed as A 1 G aN / A GaN-based LED was actually fabricated by covering with 50 pairs of Bragg reflector layers consisting of a GaN superlattice structure and forming a multilayered refractive index interface.
- the temperature was raised to 1000 ° C, and TMG and ammonia were flowed as raw materials, and the G a N layer was faceted with a mountain-shaped cross section from the top surface of the projection and the bottom surface of the depression as shown in Fig. 4 (c).
- the crystal was grown as a ridge-like crystal containing faces.
- Al. . 2 Ga. 50 pairs of 8 N (37 nm in C-axis) / G a N (34 ⁇ in C-axis) are grown, and then the growth conditions are n-type GaN growth and lateral growth becomes dominant.
- n-GaN crystals contact layers were grown from the upper surface of the sapphire substrate to a thickness of 5 / zm.
- an n-type GaN contact layer On the n-type GaN contact layer, an n-type A 1 GaN cladding layer, an InGaN light-emitting layer (MQW structure), a p-type A 1 GaN cladding layer, and a p-type GaN A contact layer was formed in order to obtain an ultraviolet LED epi-substrate with an emission wavelength of 370 nm, and further, etching to expose an n-type contact layer, electrode formation, and element isolation were performed to obtain an LED element.
- MQW structure InGaN light-emitting layer
- a p-type A 1 GaN cladding layer On the n-type GaN contact layer, an n-type A 1 GaN cladding layer, an InGaN light-emitting layer (MQW structure), a p-type A 1 GaN cladding layer, and a p-type GaN A contact layer was formed in order to obtain an ultraviolet LED epi-substrate with an emission wavelength
- Example 1 14 mW.
- Example 2 14.5 mW.
- Example 3 15 mW.
- a GaN-based LED having a quantum well structure was manufactured, and the layer between the light emitting layer and the crystal substrate was made of only GaN.
- Stripe patterning with photoresist on C-plane sapphire substrate (Width 2 ⁇ , period 4 / im, stripe orientation: the longitudinal direction of the stripe is the ⁇ 11-20> direction for the GaN-based crystal growing on the substrate), and the RIE device is used to a depth of 2 ⁇ m.
- the substrate was etched so as to have a rectangular cross section, and a substrate having a surface with a striped pattern of irregularities was obtained. At this time, the aspect ratio of the cross section of the stripe groove was 1.
- the substrate was mounted on a MOVPE device, and the temperature was raised to 1100 ° C in a hydrogen atmosphere, and thermal etching was performed. The temperature was lowered to 500 ° C, trimethylgallium (hereafter TMG) was used as the group III material, and ammonia was used as the N material to grow a 30-nm-thick GaN low-temperature buffer layer.
- TMG trimethylgallium
- ammonia was used as the N material to grow a 30-nm-thick GaN low-temperature buffer layer.
- the GaN low-temperature buffer layer was formed only on the upper surface of the projection and the bottom surface of the depression.
- the temperature was raised to 1000 ° C, TMG and ammonia were flowed as raw materials, and an undoped GaN layer was grown on a flat substrate for a time equivalent to 2 / zm, and then the growth temperature was increased to 1050 ° C. C and grown for 4 m on a flat substrate.
- the growth temperature was increased to 1050 ° C. C and grown for 4 m on a flat substrate.
- an n-type GaN contact layer (cladding layer), a 3 nm-thick InGaN Ido layer (emission wavelength: 380 nm, measurement is difficult because the In composition is close to zero), and a thickness of 6 nm
- Type A 1 GaN cladding layer, p-type GaN contact layer with a thickness of 50 nm are formed in this order, and an ultraviolet LED wafer with an emission wavelength of 380 nm is formed.
- an ultraviolet LED chip (Comparative Example 1) was formed on a sapphire substrate that had not been subjected to uneven processing under the same conditions as above, and the output was measured. Under the same conditions as above, a UV LED chip (compared with a GaN layer once formed on a flat sapphire substrate and then a mask layer) on a normal ELO substrate Example 2) was formed and its output was measured.
- Table 1 shows the results of measuring the average dislocation density in the LED wafer by cathodoluminescence, and the average value of the output, and the life (time to 80% of the initial output) of the accelerated test at 80 ° C and 2 OmA. Show.
- the output of the device of Example 4 was 1 OmW, whereas the output of the device of this example was 7 mW. From this result, the output of the device of this example was improved as compared with Comparative Examples 1 and 2, but as in Example 4, the A 1 GaN layer was located between the InGaN well layer and the crystal substrate. It was clarified that the output could be further improved by eliminating.
- Example 6 In this example, an experiment was conducted to examine the effect of the limitation on the thickness of the barrier layer of the MQW structure.
- each barrier layer of the MQW structure in Example 4 was sample 1; 3 nm, sample 2; 6 nm, sample 3; 10 nm, sample 4; 15 nm, sample 5;
- a GaN LED was manufactured in the same manner as in Example 4 above. These all belong to the light emitting device according to the present invention.
- the thickness of the barrier layer is 6 nn! At ⁇ 30 nm, it was found that higher output was further improved.
- the traveling direction of at least a part of the lateral light generated in the light emitting layer can be changed, As a result, the amount of light extracted to the outside world could be increased.
- dislocation reduction is achieved by creating a crystal structure on the substrate that has been processed to have irregularities.
- GaN as the material of the n-type cladding layer (and the barrier layer in the quantum well structure)
- the strain is reduced, and as a preferable mode in the MQW structure, the thickness of the barrier wall layer is limited. As a result, the light emission output of the device was improved, and the life was extended.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/472,324 US7053420B2 (en) | 2001-03-21 | 2002-03-20 | GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof |
EP02705381A EP1378949A4 (en) | 2001-03-21 | 2002-03-20 | LIGHT-EMITTING SEMICONDUCTOR ELEMENT |
KR1020037012295A KR100632760B1 (ko) | 2001-03-21 | 2002-03-20 | 반도체 발광 소자 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-81447 | 2001-03-21 | ||
JP2001080806A JP3595276B2 (ja) | 2001-03-21 | 2001-03-21 | 紫外線発光素子 |
JP2001081447A JP3595277B2 (ja) | 2001-03-21 | 2001-03-21 | GaN系半導体発光ダイオード |
JP2001-80806 | 2001-03-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002075821A1 true WO2002075821A1 (fr) | 2002-09-26 |
Family
ID=26611679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/002658 WO2002075821A1 (fr) | 2001-03-21 | 2002-03-20 | Dispositif luminescent semiconducteur |
Country Status (6)
Country | Link |
---|---|
US (1) | US7053420B2 (ja) |
EP (1) | EP1378949A4 (ja) |
KR (1) | KR100632760B1 (ja) |
CN (1) | CN1284250C (ja) |
TW (1) | TW536841B (ja) |
WO (1) | WO2002075821A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2020691A2 (en) | 2007-07-31 | 2009-02-04 | Epivalley Co., Ltd. | III-Nitride semiconductor light emitting device |
US8946772B2 (en) | 2008-02-15 | 2015-02-03 | Mitsubishi Chemical Corporation | Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element |
EP1429396B1 (en) * | 2002-12-11 | 2019-06-19 | Lumileds Holding B.V. | light emitting device with enhanced optical scattering |
Families Citing this family (177)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100677683B1 (ko) * | 1999-03-17 | 2007-02-05 | 미츠비시 덴센 고교 가부시키가이샤 | 반도체 기재와 그 제조 방법 및 반도체 결정의 제조 방법 |
JP3556916B2 (ja) * | 2000-09-18 | 2004-08-25 | 三菱電線工業株式会社 | 半導体基材の製造方法 |
JP3797151B2 (ja) * | 2001-07-05 | 2006-07-12 | ソニー株式会社 | レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置 |
JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
JP4150527B2 (ja) * | 2002-02-27 | 2008-09-17 | 日鉱金属株式会社 | 結晶の製造方法 |
TW571449B (en) * | 2002-12-23 | 2004-01-11 | Epistar Corp | Light-emitting device having micro-reflective structure |
KR100504180B1 (ko) * | 2003-01-29 | 2005-07-28 | 엘지전자 주식회사 | 질화물 화합물 반도체의 결정성장 방법 |
US7683386B2 (en) | 2003-08-19 | 2010-03-23 | Nichia Corporation | Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth |
EP1704596A2 (en) * | 2003-09-05 | 2006-09-27 | Dot Metrics Technology, Inc. | Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture |
KR100714639B1 (ko) * | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | 발광 소자 |
JP4557542B2 (ja) * | 2003-12-24 | 2010-10-06 | ▲さん▼圓光電股▲ふん▼有限公司 | 窒化物発光装置及び高発光効率窒化物発光装置 |
TWI224877B (en) * | 2003-12-25 | 2004-12-01 | Super Nova Optoelectronics Cor | Gallium nitride series light-emitting diode structure and its manufacturing method |
KR20050077902A (ko) | 2004-01-29 | 2005-08-04 | 엘지전자 주식회사 | 질화물 반도체 박막의 성장 방법 |
KR100581831B1 (ko) * | 2004-02-05 | 2006-05-23 | 엘지전자 주식회사 | 발광 다이오드 |
CN1993835A (zh) * | 2004-06-14 | 2007-07-04 | 三菱电线工业株式会社 | 氮化物半导体发光器件 |
TWI269466B (en) * | 2004-06-18 | 2006-12-21 | Showa Denko Kk | Group III nitride semiconductor light emitting device |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
DE102005013894B4 (de) * | 2004-06-30 | 2010-06-17 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung |
KR100649494B1 (ko) * | 2004-08-17 | 2006-11-24 | 삼성전기주식회사 | 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드 |
WO2006025277A1 (ja) * | 2004-08-31 | 2006-03-09 | Meijo University | 半導体発光素子製造方法および半導体発光素子 |
US7633097B2 (en) * | 2004-09-23 | 2009-12-15 | Philips Lumileds Lighting Company, Llc | Growth of III-nitride light emitting devices on textured substrates |
KR100601138B1 (ko) * | 2004-10-06 | 2006-07-19 | 에피밸리 주식회사 | Ⅲ-질화물 반도체 발광소자 및 그 제조 방법 |
DE102004050891B4 (de) * | 2004-10-19 | 2019-01-10 | Lumileds Holding B.V. | Lichtmittierende III-Nitrid-Halbleitervorrichtung |
KR100664988B1 (ko) * | 2004-11-04 | 2007-01-09 | 삼성전기주식회사 | 광추출효율이 향상된 반도체 발광소자 |
KR100644052B1 (ko) * | 2004-11-08 | 2006-11-10 | 엘지전자 주식회사 | 고 광적출 효율 발광 다이오드 및 그의 제조 방법 |
US8605769B2 (en) * | 2004-12-08 | 2013-12-10 | Sumitomo Electric Industries, Ltd. | Semiconductor laser device and manufacturing method thereof |
KR100580751B1 (ko) | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
CN100431182C (zh) * | 2005-01-28 | 2008-11-05 | 晶元光电股份有限公司 | 发光组件 |
KR100712753B1 (ko) * | 2005-03-09 | 2007-04-30 | 주식회사 실트론 | 화합물 반도체 장치 및 그 제조방법 |
KR100669142B1 (ko) * | 2005-04-20 | 2007-01-15 | (주)더리즈 | 발광 소자와 이의 제조 방법 |
JP5082278B2 (ja) * | 2005-05-16 | 2012-11-28 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系iii−v族化合物半導体の成長方法 |
JP2006324324A (ja) * | 2005-05-17 | 2006-11-30 | Sumitomo Electric Ind Ltd | 発光装置、発光装置の製造方法および窒化物半導体基板 |
JP4670489B2 (ja) * | 2005-06-06 | 2011-04-13 | 日立電線株式会社 | 発光ダイオード及びその製造方法 |
JP2006339605A (ja) * | 2005-06-06 | 2006-12-14 | Sumitomo Electric Ind Ltd | 化合物半導体部材のダメージ評価方法、化合物半導体部材の製造方法、窒化ガリウム系化合物半導体部材及び窒化ガリウム系化合物半導体膜 |
JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
KR100683446B1 (ko) * | 2005-07-16 | 2007-02-20 | 서울옵토디바이스주식회사 | 요철 버퍼층을 갖는 발광소자 및 그 제조방법 |
KR101154744B1 (ko) * | 2005-08-01 | 2012-06-08 | 엘지이노텍 주식회사 | 질화물 발광 소자 및 그 제조 방법 |
KR100690322B1 (ko) * | 2005-08-19 | 2007-03-09 | 서울옵토디바이스주식회사 | 거칠어진 표면을 구비하는 고굴절률 물질층을 채택한 발광다이오드 |
WO2007060931A1 (ja) * | 2005-11-22 | 2007-05-31 | Rohm Co., Ltd. | 窒化物半導体素子 |
US20080128734A1 (en) * | 2006-01-06 | 2008-06-05 | Epistar Corporation | Light-emitting device |
US20100084679A1 (en) * | 2006-01-06 | 2010-04-08 | Epistar Corporation | Light-emitting device |
KR101158076B1 (ko) * | 2006-01-13 | 2012-06-22 | 서울옵토디바이스주식회사 | 요철 반도체층을 갖는 발광 다이오드의 제조 방법 및 이를위한 발광 다이오드 |
KR100659373B1 (ko) * | 2006-02-09 | 2006-12-19 | 서울옵토디바이스주식회사 | 패터닝된 발광다이오드용 기판 및 그것을 채택하는 발광다이오드 |
TWI288491B (en) * | 2006-03-02 | 2007-10-11 | Nat Univ Chung Hsing | High extraction efficiency of solid-state light emitting device |
JP4888857B2 (ja) * | 2006-03-20 | 2012-02-29 | 国立大学法人徳島大学 | Iii族窒化物半導体薄膜およびiii族窒化物半導体発光素子 |
JP4637781B2 (ja) * | 2006-03-31 | 2011-02-23 | 昭和電工株式会社 | GaN系半導体発光素子の製造方法 |
KR101229830B1 (ko) * | 2006-04-14 | 2013-02-04 | 서울옵토디바이스주식회사 | 교류용 발광다이오드 및 그 제조방법 |
KR100828873B1 (ko) * | 2006-04-25 | 2008-05-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100780233B1 (ko) * | 2006-05-15 | 2007-11-27 | 삼성전기주식회사 | 다중 패턴 구조를 지닌 반도체 발광 소자 |
KR100735470B1 (ko) * | 2006-05-19 | 2007-07-03 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
TWI304278B (en) * | 2006-06-16 | 2008-12-11 | Ind Tech Res Inst | Semiconductor emitting device substrate and method of fabricating the same |
US20080025037A1 (en) * | 2006-07-28 | 2008-01-31 | Visteon Global Technologies, Inc. | LED headlamp |
TWI309481B (en) | 2006-07-28 | 2009-05-01 | Epistar Corp | A light emitting device having a patterned substrate and the method thereof |
JP2008053602A (ja) * | 2006-08-28 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 半導体素子及びその製造方法 |
CN102751402B (zh) * | 2006-09-08 | 2016-04-06 | 晶元光电股份有限公司 | 半导体发光元件和发光元件的制造方法 |
WO2008047923A1 (fr) * | 2006-10-20 | 2008-04-24 | Mitsubishi Chemical Corporation | Dispositif de diode émettrice de lumière à semi-conducteur à base de nitrure |
KR100856267B1 (ko) * | 2006-12-04 | 2008-09-03 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광 소자 및 제조방법 |
JP5082752B2 (ja) | 2006-12-21 | 2012-11-28 | 日亜化学工業株式会社 | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
US7663148B2 (en) * | 2006-12-22 | 2010-02-16 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device with reduced strain light emitting layer |
JP4908381B2 (ja) * | 2006-12-22 | 2012-04-04 | 昭和電工株式会社 | Iii族窒化物半導体層の製造方法、及びiii族窒化物半導体発光素子、並びにランプ |
KR100878979B1 (ko) * | 2007-01-18 | 2009-01-14 | 광주과학기술원 | 광결정 구조를 가지는 발광 다이오드 |
JP5032171B2 (ja) * | 2007-03-26 | 2012-09-26 | 株式会社東芝 | 半導体発光素子およびその製造方法ならびに発光装置 |
TW200905928A (en) * | 2007-03-29 | 2009-02-01 | Univ California | Dual surface-roughened N-face high-brightness LED |
KR101283261B1 (ko) * | 2007-05-21 | 2013-07-11 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
TWI354382B (en) * | 2007-06-01 | 2011-12-11 | Huga Optotech Inc | Semiconductor substrate with electromagnetic-wave- |
US7956370B2 (en) * | 2007-06-12 | 2011-06-07 | Siphoton, Inc. | Silicon based solid state lighting |
US20090032799A1 (en) * | 2007-06-12 | 2009-02-05 | Siphoton, Inc | Light emitting device |
WO2009002129A2 (en) * | 2007-06-27 | 2008-12-31 | Epivalley Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
JP2009049044A (ja) * | 2007-08-13 | 2009-03-05 | Sumitomo Electric Ind Ltd | 半導体レーザを作製する方法 |
TWI361497B (en) * | 2007-08-20 | 2012-04-01 | Delta Electronics Inc | Light-emitting diode apparatus and manufacturing method thereof |
KR101449000B1 (ko) * | 2007-09-06 | 2014-10-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101405790B1 (ko) * | 2007-09-21 | 2014-06-12 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US7985979B2 (en) | 2007-12-19 | 2011-07-26 | Koninklijke Philips Electronics, N.V. | Semiconductor light emitting device with light extraction structures |
TW200929593A (en) * | 2007-12-20 | 2009-07-01 | Nat Univ Tsing Hua | Light source with reflective pattern structure |
KR100947507B1 (ko) * | 2008-03-25 | 2010-03-12 | 우리엘에스티 주식회사 | 임의의 발진파장을 갖는 발광소자 제조방법 |
US8030666B2 (en) * | 2008-04-16 | 2011-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Group-III nitride epitaxial layer on silicon substrate |
KR101020961B1 (ko) | 2008-05-02 | 2011-03-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100953658B1 (ko) | 2008-06-05 | 2010-04-20 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
US8395168B2 (en) * | 2008-06-06 | 2013-03-12 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Semiconductor wafers and semiconductor devices with polishing stops and method of making the same |
US20100200880A1 (en) * | 2008-06-06 | 2010-08-12 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Semiconductor wafers and semiconductor devices and methods of making semiconductor wafers and devices |
US20110108800A1 (en) * | 2008-06-24 | 2011-05-12 | Pan Shaoher X | Silicon based solid state lighting |
US20110114917A1 (en) * | 2008-07-21 | 2011-05-19 | Pan Shaoher X | Light emitting device |
US8058082B2 (en) | 2008-08-11 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode with textured substrate |
US7741134B2 (en) * | 2008-09-15 | 2010-06-22 | Bridgelux, Inc. | Inverted LED structure with improved light extraction |
KR101009651B1 (ko) * | 2008-10-15 | 2011-01-19 | 박은현 | 3족 질화물 반도체 발광소자 |
US8513685B2 (en) * | 2008-11-13 | 2013-08-20 | 3M Innovative Properties Company | Electrically pixelated luminescent device incorporating optical elements |
TWI527260B (zh) | 2008-11-19 | 2016-03-21 | 廣鎵光電股份有限公司 | 發光元件結構及其半導體晶圓結構 |
KR101005301B1 (ko) | 2008-11-20 | 2011-01-04 | 전북대학교산학협력단 | 발광소자 및 이의 제조 방법 |
JP5180050B2 (ja) * | 2008-12-17 | 2013-04-10 | スタンレー電気株式会社 | 半導体素子の製造方法 |
JP5311408B2 (ja) * | 2008-12-26 | 2013-10-09 | シャープ株式会社 | 窒化物半導体発光素子 |
GB2467911B (en) * | 2009-02-16 | 2013-06-05 | Rfmd Uk Ltd | A semiconductor structure and a method of manufacture thereof |
KR101055090B1 (ko) * | 2009-03-02 | 2011-08-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP5196403B2 (ja) | 2009-03-23 | 2013-05-15 | 国立大学法人山口大学 | サファイア基板の製造方法、および半導体装置 |
TWI385832B (zh) * | 2009-04-15 | 2013-02-11 | Huga Optotech Inc | Light emitting diode structure |
US20100308300A1 (en) * | 2009-06-08 | 2010-12-09 | Siphoton, Inc. | Integrated circuit light emission device, module and fabrication process |
TWI487141B (zh) * | 2009-07-15 | 2015-06-01 | Advanced Optoelectronic Tech | 提高光萃取效率之半導體光電結構及其製造方法 |
US20110017972A1 (en) * | 2009-07-22 | 2011-01-27 | Rfmd (Uk) Limited | Light emitting structure with integral reverse voltage protection |
TW201108473A (en) * | 2009-08-27 | 2011-03-01 | Genesis Photonics Inc | Light emitting diode package structure |
JP5489117B2 (ja) * | 2009-09-01 | 2014-05-14 | シャープ株式会社 | 窒化物半導体素子、窒化物半導体素子の製造方法、窒化物半導体層の製造方法および窒化物半導体発光素子 |
US8476658B2 (en) | 2009-11-25 | 2013-07-02 | Jing Jie Dai | Semiconductor light-emitting devices |
US8586963B2 (en) * | 2009-12-08 | 2013-11-19 | Lehigh University | Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same |
TWI415300B (zh) * | 2009-12-24 | 2013-11-11 | Hk Applied Science & Tech Res | 半導體晶圓及半導體裝置及製造半導體晶圓及裝置之方法 |
CN101777615B (zh) * | 2010-01-13 | 2013-07-31 | 南京大学 | 表面多孔的GaN基片的制备方法及由所述制备方法得到的GaN基片 |
CN102130051A (zh) * | 2010-01-20 | 2011-07-20 | 晶元光电股份有限公司 | 发光二极管及其制造方法 |
US8722441B2 (en) | 2010-01-21 | 2014-05-13 | Siphoton Inc. | Manufacturing process for solid state lighting device on a conductive substrate |
US8283676B2 (en) * | 2010-01-21 | 2012-10-09 | Siphoton Inc. | Manufacturing process for solid state lighting device on a conductive substrate |
US8674383B2 (en) * | 2010-01-21 | 2014-03-18 | Siphoton Inc. | Solid state lighting device on a conductive substrate |
KR100999779B1 (ko) * | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR101658838B1 (ko) * | 2010-02-04 | 2016-10-04 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
JP5570838B2 (ja) * | 2010-02-10 | 2014-08-13 | ソウル バイオシス カンパニー リミテッド | 半導体基板、その製造方法、半導体デバイス及びその製造方法 |
US8716049B2 (en) * | 2010-02-23 | 2014-05-06 | Applied Materials, Inc. | Growth of group III-V material layers by spatially confined epitaxy |
KR101047721B1 (ko) | 2010-03-09 | 2011-07-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
US8378367B2 (en) * | 2010-04-16 | 2013-02-19 | Invenlux Limited | Light-emitting devices with vertical light-extraction mechanism and method for fabricating the same |
JP5789782B2 (ja) * | 2010-05-20 | 2015-10-07 | パナソニックIpマネジメント株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP2012033708A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
TW201214802A (en) * | 2010-09-27 | 2012-04-01 | Nat Univ Chung Hsing | Patterned substrate and LED formed using the same |
CN102044608A (zh) * | 2010-11-17 | 2011-05-04 | 重庆大学 | 一种倒装焊led芯片结构及其制作方法 |
WO2012090818A1 (ja) * | 2010-12-29 | 2012-07-05 | シャープ株式会社 | 窒化物半導体構造、窒化物半導体発光素子、窒化物半導体トランジスタ素子、窒化物半導体構造の製造方法および窒化物半導体素子の製造方法 |
US8217418B1 (en) | 2011-02-14 | 2012-07-10 | Siphoton Inc. | Semi-polar semiconductor light emission devices |
US8624292B2 (en) | 2011-02-14 | 2014-01-07 | Siphoton Inc. | Non-polar semiconductor light emission devices |
CN102651438B (zh) * | 2011-02-28 | 2015-05-13 | 比亚迪股份有限公司 | 衬底、该衬底的制备方法及具有该衬底的芯片 |
KR20120100193A (ko) * | 2011-03-03 | 2012-09-12 | 서울옵토디바이스주식회사 | 발광 다이오드 칩 |
CN102760810B (zh) * | 2011-04-28 | 2015-01-07 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
CN104733592A (zh) * | 2011-04-29 | 2015-06-24 | 新世纪光电股份有限公司 | 发光元件结构及其制作方法 |
TW201248915A (en) * | 2011-05-31 | 2012-12-01 | Aceplux Optotech Inc | Light-emitting diode of high light-extraction efficiency and its preparation method |
TW201248725A (en) * | 2011-05-31 | 2012-12-01 | Aceplux Optotech Inc | Epitaxial substrate with transparent cone, LED, and manufacturing method thereof. |
KR101436077B1 (ko) * | 2011-07-12 | 2014-09-17 | 마루분 가부시키가이샤 | 발광소자 및 그 제조방법 |
JP5879225B2 (ja) | 2011-08-22 | 2016-03-08 | 住友化学株式会社 | 窒化物半導体テンプレート及び発光ダイオード |
TWI514614B (zh) * | 2011-08-30 | 2015-12-21 | Lextar Electronics Corp | 固態發光半導體結構及其磊晶層成長方法 |
JP5689533B2 (ja) * | 2011-08-31 | 2015-03-25 | 旭化成イーマテリアルズ株式会社 | 光学用基材、半導体発光素子、インプリント用モールドおよび露光方法 |
JP5832210B2 (ja) * | 2011-09-16 | 2015-12-16 | キヤノン株式会社 | 有機el素子 |
US10622515B2 (en) * | 2011-10-10 | 2020-04-14 | Sensor Electronic Technology, Inc. | Patterned layer design for group III nitride layer growth |
KR101262953B1 (ko) | 2011-12-13 | 2013-05-09 | 고려대학교 산학협력단 | 질화물계 반도체 발광소자 및 그 제조방법 |
JP2013145867A (ja) * | 2011-12-15 | 2013-07-25 | Hitachi Cable Ltd | 窒化物半導体テンプレート及び発光ダイオード |
CN103219433A (zh) * | 2012-01-20 | 2013-07-24 | 泰谷光电科技股份有限公司 | 发光二极管及其制造方法 |
TWI455304B (zh) * | 2012-01-30 | 2014-10-01 | Lextar Electronics Corp | 圖案化基板及堆疊發光二極體結構 |
KR102141815B1 (ko) * | 2012-11-02 | 2020-08-06 | 리켄 | 자외선 발광 다이오드 및 그 제조 방법 |
KR101977677B1 (ko) | 2013-02-05 | 2019-05-13 | 삼성전자주식회사 | 반도체 발광소자 |
JP2014183285A (ja) * | 2013-03-21 | 2014-09-29 | Stanley Electric Co Ltd | 発光素子 |
KR20140119266A (ko) * | 2013-03-28 | 2014-10-10 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그 제조방법 |
CN105283968A (zh) | 2013-07-17 | 2016-01-27 | 丸文株式会社 | 半导体发光元件及其制造方法 |
KR20150039926A (ko) * | 2013-10-04 | 2015-04-14 | 엘지이노텍 주식회사 | 발광소자 |
CN104752577A (zh) * | 2013-12-30 | 2015-07-01 | 比亚迪股份有限公司 | 一种发光二极管芯片及其制作方法 |
JP6562842B2 (ja) * | 2014-02-07 | 2019-08-21 | 日本碍子株式会社 | 複合基板、発光素子及びそれらの製造方法 |
CN105934833B (zh) | 2014-03-06 | 2017-09-15 | 丸文株式会社 | 深紫外led及其制造方法 |
WO2015163908A1 (en) * | 2014-04-25 | 2015-10-29 | The Texas State University-San Marcos | Material selective regrowth structure and method |
US9548419B2 (en) | 2014-05-20 | 2017-01-17 | Southern Taiwan University Of Science And Technology | Light emitting diode chip having multi microstructure substrate surface |
KR102352661B1 (ko) * | 2014-05-30 | 2022-01-18 | 루미리즈 홀딩 비.브이. | 패터닝된 기판을 가지는 발광 디바이스 |
KR20170018802A (ko) * | 2014-06-17 | 2017-02-20 | 엘시드 가부시끼가이샤 | 발광 소자의 제조 방법 및 발광 소자 |
KR20160024170A (ko) | 2014-08-25 | 2016-03-04 | 삼성전자주식회사 | 반도체 발광 소자 |
JP6415909B2 (ja) | 2014-09-17 | 2018-10-31 | 住友化学株式会社 | 窒化物半導体テンプレートの製造方法 |
JP6436694B2 (ja) | 2014-09-17 | 2018-12-12 | 住友化学株式会社 | 窒化物半導体テンプレートの製造方法 |
KR101651342B1 (ko) * | 2014-12-03 | 2016-08-26 | 주식회사 올릭스 | 미술 조명용 스펙트럼 특성을 만족하는 발광 다이오드 소자 및 모듈 |
JP5999800B1 (ja) | 2015-01-16 | 2016-09-28 | 丸文株式会社 | 深紫外led及びその製造方法 |
DE102015102365A1 (de) * | 2015-02-19 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Strahlungskörper und Verfahren zur Herstellung eines Strahlungskörpers |
JP6230038B2 (ja) | 2015-09-03 | 2017-11-15 | 丸文株式会社 | 深紫外led及びその製造方法 |
DE102016101442A1 (de) * | 2016-01-27 | 2017-07-27 | Osram Opto Semiconductors Gmbh | Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement |
KR101811819B1 (ko) | 2016-03-30 | 2017-12-22 | 마루분 가부시키가이샤 | 심자외 led 및 그 제조 방법 |
CN106098883B (zh) * | 2016-06-27 | 2018-04-13 | 山东浪潮华光光电子股份有限公司 | 一种量子阱结构、一种led外延结构及其生长方法 |
DE112017005532T5 (de) * | 2016-11-02 | 2019-07-25 | Sony Corporation | Lichtemittierendes element und verfahren zu seiner herstellung |
WO2018209168A1 (en) * | 2017-05-12 | 2018-11-15 | Crystal Is, Inc. | Aluminum nitride substrate removal for ultraviolet light-emitting devices |
CN109004075B (zh) * | 2017-06-06 | 2020-02-07 | 清华大学 | 发光二极管 |
US20190198564A1 (en) * | 2017-12-20 | 2019-06-27 | Lumileds Llc | Monolithic segmented led array architecture with islanded epitaxial growth |
US11961875B2 (en) | 2017-12-20 | 2024-04-16 | Lumileds Llc | Monolithic segmented LED array architecture with islanded epitaxial growth |
JP7316610B6 (ja) | 2018-01-26 | 2024-02-19 | 丸文株式会社 | 深紫外led及びその製造方法 |
US10847625B1 (en) * | 2019-11-19 | 2020-11-24 | Opnovix Corp. | Indium-gallium-nitride structures and devices |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
CN112038461B (zh) * | 2020-07-17 | 2021-11-05 | 华灿光电(苏州)有限公司 | 发光二极管外延片、芯片及其制备方法 |
US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
US11955583B2 (en) | 2020-12-01 | 2024-04-09 | Lumileds Llc | Flip chip micro light emitting diodes |
US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
US11600656B2 (en) | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
US11935987B2 (en) | 2021-11-03 | 2024-03-19 | Lumileds Llc | Light emitting diode arrays with a light-emitting pixel area |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1131864A (ja) * | 1997-07-11 | 1999-02-02 | Nec Corp | 低転位窒化ガリウムの結晶成長方法 |
JP2000124500A (ja) * | 1998-10-15 | 2000-04-28 | Toshiba Corp | 窒化ガリウム系半導体装置 |
JP2000164929A (ja) * | 1998-11-26 | 2000-06-16 | Sony Corp | 半導体薄膜と半導体素子と半導体装置とこれらの製造方法 |
JP2000331947A (ja) * | 1999-03-17 | 2000-11-30 | Mitsubishi Cable Ind Ltd | 半導体基材及びその作製方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3714984B2 (ja) | 1995-03-06 | 2005-11-09 | シャープ株式会社 | 分布帰還型半導体レーザ装置 |
US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
JP3439063B2 (ja) | 1997-03-24 | 2003-08-25 | 三洋電機株式会社 | 半導体発光素子および発光ランプ |
US6091083A (en) * | 1997-06-02 | 2000-07-18 | Sharp Kabushiki Kaisha | Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface |
JP3930161B2 (ja) | 1997-08-29 | 2007-06-13 | 株式会社東芝 | 窒化物系半導体素子、発光素子及びその製造方法 |
JP3491538B2 (ja) | 1997-10-09 | 2004-01-26 | 日亜化学工業株式会社 | 窒化物半導体の成長方法及び窒化物半導体素子 |
US6091085A (en) * | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
JP3201475B2 (ja) | 1998-09-14 | 2001-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
KR100677683B1 (ko) * | 1999-03-17 | 2007-02-05 | 미츠비시 덴센 고교 가부시키가이샤 | 반도체 기재와 그 제조 방법 및 반도체 결정의 제조 방법 |
JP3587081B2 (ja) * | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法及びiii族窒化物半導体発光素子 |
JP3633447B2 (ja) | 1999-09-29 | 2005-03-30 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子 |
US6531719B2 (en) * | 1999-09-29 | 2003-03-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
EP1104031B1 (en) * | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitride semiconductor laser diode and method of fabricating the same |
JP3556916B2 (ja) * | 2000-09-18 | 2004-08-25 | 三菱電線工業株式会社 | 半導体基材の製造方法 |
-
2002
- 2002-03-20 CN CN02806788.6A patent/CN1284250C/zh not_active Expired - Lifetime
- 2002-03-20 TW TW091105263A patent/TW536841B/zh not_active IP Right Cessation
- 2002-03-20 US US10/472,324 patent/US7053420B2/en not_active Expired - Lifetime
- 2002-03-20 WO PCT/JP2002/002658 patent/WO2002075821A1/ja active Application Filing
- 2002-03-20 EP EP02705381A patent/EP1378949A4/en not_active Withdrawn
- 2002-03-20 KR KR1020037012295A patent/KR100632760B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1131864A (ja) * | 1997-07-11 | 1999-02-02 | Nec Corp | 低転位窒化ガリウムの結晶成長方法 |
JP2000124500A (ja) * | 1998-10-15 | 2000-04-28 | Toshiba Corp | 窒化ガリウム系半導体装置 |
JP2000164929A (ja) * | 1998-11-26 | 2000-06-16 | Sony Corp | 半導体薄膜と半導体素子と半導体装置とこれらの製造方法 |
JP2000331947A (ja) * | 1999-03-17 | 2000-11-30 | Mitsubishi Cable Ind Ltd | 半導体基材及びその作製方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1378949A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1429396B1 (en) * | 2002-12-11 | 2019-06-19 | Lumileds Holding B.V. | light emitting device with enhanced optical scattering |
EP2020691A2 (en) | 2007-07-31 | 2009-02-04 | Epivalley Co., Ltd. | III-Nitride semiconductor light emitting device |
US8946772B2 (en) | 2008-02-15 | 2015-02-03 | Mitsubishi Chemical Corporation | Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element |
Also Published As
Publication number | Publication date |
---|---|
US7053420B2 (en) | 2006-05-30 |
EP1378949A1 (en) | 2004-01-07 |
KR100632760B1 (ko) | 2006-10-11 |
EP1378949A4 (en) | 2006-03-22 |
US20040113166A1 (en) | 2004-06-17 |
CN1498427A (zh) | 2004-05-19 |
TW536841B (en) | 2003-06-11 |
CN1284250C (zh) | 2006-11-08 |
KR20030093265A (ko) | 2003-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002075821A1 (fr) | Dispositif luminescent semiconducteur | |
JP3595277B2 (ja) | GaN系半導体発光ダイオード | |
JP4928652B2 (ja) | 半導体発光素子 | |
KR100896576B1 (ko) | 질화물계 반도체 발광소자 및 그 제조방법 | |
JP4626306B2 (ja) | 窒化物半導体発光素子およびその製造方法 | |
WO1998039827A1 (fr) | Element electroluminescent semi-conducteur a base de nitrure de gallium muni d'une zone active presentant une structure de multiplexage a puits quantique et un dispostif semi-conducteur a sources de lumiere utilisant le laser | |
JP4928651B2 (ja) | 半導体発光素子 | |
JP2003110136A (ja) | 発光素子 | |
JP2005108982A (ja) | 半導体発光素子 | |
JP2006074050A (ja) | 量子井戸構造を有する放射放出性のオプトエレクトロニック構成素子および該オプトエレクトロニック構成素子の製造方法 | |
JP2002246698A (ja) | 窒化物半導体発光素子とその製法 | |
JP5076656B2 (ja) | 窒化物半導体レーザ素子 | |
JP2002151796A (ja) | 窒化物半導体発光素子とこれを含む装置 | |
JP2003218396A (ja) | 紫外線発光素子 | |
JP2008277651A (ja) | 発光ダイオード | |
JP2003092426A (ja) | 窒化物系化合物半導体発光素子およびその製造方法 | |
JP2011060917A (ja) | 半導体発光素子 | |
JP2007036174A (ja) | 窒化ガリウム系発光ダイオード | |
JP2005175056A (ja) | 窒化物半導体基板および窒化物半導体レーザ素子 | |
JP2011009382A (ja) | 半導体発光素子 | |
JP2002280609A (ja) | 紫外線発光素子 | |
JP3819398B2 (ja) | 半導体発光素子およびその製造方法 | |
JP4360066B2 (ja) | 窒化ガリウム系発光素子 | |
JP2008028375A (ja) | 窒化物半導体レーザ素子 | |
JP2002246694A (ja) | 窒化物半導体発光素子とその製法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 028067886 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020037012295 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002705381 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10472324 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 2002705381 Country of ref document: EP |