TWI604615B - 半導體裝置製造方法 - Google Patents

半導體裝置製造方法 Download PDF

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Publication number
TWI604615B
TWI604615B TW105112437A TW105112437A TWI604615B TW I604615 B TWI604615 B TW I604615B TW 105112437 A TW105112437 A TW 105112437A TW 105112437 A TW105112437 A TW 105112437A TW I604615 B TWI604615 B TW I604615B
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TW
Taiwan
Prior art keywords
film
oxide semiconductor
substrate
insulating film
electrode
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TW105112437A
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English (en)
Chinese (zh)
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TW201630189A (zh
Inventor
山崎舜平
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半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
TW105112437A 2010-09-03 2011-08-30 半導體裝置製造方法 TWI604615B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010197749 2010-09-03
JP2010287403 2010-12-24

Publications (2)

Publication Number Publication Date
TW201630189A TW201630189A (zh) 2016-08-16
TWI604615B true TWI604615B (zh) 2017-11-01

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW105112437A TWI604615B (zh) 2010-09-03 2011-08-30 半導體裝置製造方法
TW106127804A TWI661563B (zh) 2010-09-03 2011-08-30 半導體裝置製造方法
TW100131132A TWI542002B (zh) 2010-09-03 2011-08-30 半導體裝置製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW106127804A TWI661563B (zh) 2010-09-03 2011-08-30 半導體裝置製造方法
TW100131132A TWI542002B (zh) 2010-09-03 2011-08-30 半導體裝置製造方法

Country Status (4)

Country Link
US (3) US8728860B2 (enExample)
JP (4) JP5918945B2 (enExample)
TW (3) TWI604615B (enExample)
WO (1) WO2012029596A1 (enExample)

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KR102639256B1 (ko) 2012-12-28 2024-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
TWI607510B (zh) * 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
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KR102220450B1 (ko) 2013-12-02 2021-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
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JP6705663B2 (ja) 2015-03-06 2020-06-03 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN106684125B (zh) * 2015-11-05 2020-05-08 群创光电股份有限公司 显示设备
KR101924687B1 (ko) 2016-06-30 2018-12-04 연세대학교 산학협력단 반도체 소자 및 이의 제조 방법
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KR102842127B1 (ko) * 2021-04-15 2025-08-05 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
KR102735414B1 (ko) * 2021-09-23 2024-11-28 성균관대학교산학협력단 용액연소법을 이용한 산화하프늄 기반 강유전체막 형성방법 및 이를 포함하는 네거티브커패시턴스 반도체소자
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