JP5918945B2 - トランジスタの作製方法 - Google Patents

トランジスタの作製方法 Download PDF

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Publication number
JP5918945B2
JP5918945B2 JP2011184381A JP2011184381A JP5918945B2 JP 5918945 B2 JP5918945 B2 JP 5918945B2 JP 2011184381 A JP2011184381 A JP 2011184381A JP 2011184381 A JP2011184381 A JP 2011184381A JP 5918945 B2 JP5918945 B2 JP 5918945B2
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film
oxide semiconductor
substrate
insulating film
transistor
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Japanese (ja)
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JP2012146946A5 (enExample
JP2012146946A (ja
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山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2012146946A5 publication Critical patent/JP2012146946A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
JP2011184381A 2010-09-03 2011-08-26 トランジスタの作製方法 Active JP5918945B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011184381A JP5918945B2 (ja) 2010-09-03 2011-08-26 トランジスタの作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010197749 2010-09-03
JP2010197749 2010-09-03
JP2010287403 2010-12-24
JP2010287403 2010-12-24
JP2011184381A JP5918945B2 (ja) 2010-09-03 2011-08-26 トランジスタの作製方法

Related Child Applications (1)

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JP2016025533A Division JP2016106422A (ja) 2010-09-03 2016-02-15 半導体装置の作製方法

Publications (3)

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JP2012146946A JP2012146946A (ja) 2012-08-02
JP2012146946A5 JP2012146946A5 (enExample) 2014-09-11
JP5918945B2 true JP5918945B2 (ja) 2016-05-18

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JP2011184381A Active JP5918945B2 (ja) 2010-09-03 2011-08-26 トランジスタの作製方法
JP2016025533A Withdrawn JP2016106422A (ja) 2010-09-03 2016-02-15 半導体装置の作製方法
JP2017213590A Active JP6590891B2 (ja) 2010-09-03 2017-11-06 半導体装置
JP2019168348A Withdrawn JP2019216276A (ja) 2010-09-03 2019-09-17 半導体装置

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JP2016025533A Withdrawn JP2016106422A (ja) 2010-09-03 2016-02-15 半導体装置の作製方法
JP2017213590A Active JP6590891B2 (ja) 2010-09-03 2017-11-06 半導体装置
JP2019168348A Withdrawn JP2019216276A (ja) 2010-09-03 2019-09-17 半導体装置

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US (3) US8728860B2 (enExample)
JP (4) JP5918945B2 (enExample)
TW (3) TWI542002B (enExample)
WO (1) WO2012029596A1 (enExample)

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WO2012029596A1 (en) * 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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US8829528B2 (en) * 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
US20130137232A1 (en) * 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
EP2880690B1 (en) * 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
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KR102279459B1 (ko) * 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102151696B1 (ko) 2012-12-28 2020-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
TWI607510B (zh) * 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI644433B (zh) * 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 半導體裝置
JP6401483B2 (ja) * 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
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DE102014019794B4 (de) * 2013-05-20 2024-10-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
JP6400336B2 (ja) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
JP6322503B2 (ja) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
KR102705567B1 (ko) 2013-12-02 2024-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9349751B2 (en) * 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9379192B2 (en) * 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104867980B (zh) * 2014-02-24 2018-04-24 清华大学 薄膜晶体管及其阵列
CN104867876B (zh) 2014-02-24 2017-11-14 清华大学 薄膜晶体管阵列的制备方法
CN203983289U (zh) * 2014-06-17 2014-12-03 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及显示装置
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6705663B2 (ja) * 2015-03-06 2020-06-03 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN106684125B (zh) * 2015-11-05 2020-05-08 群创光电股份有限公司 显示设备
KR101924687B1 (ko) 2016-06-30 2018-12-04 연세대학교 산학협력단 반도체 소자 및 이의 제조 방법
US20180026055A1 (en) 2016-07-19 2018-01-25 Applied Materials, Inc. Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices
US10205008B2 (en) * 2016-08-03 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US11031506B2 (en) 2018-08-31 2021-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor using oxide semiconductor
KR20220147634A (ko) * 2020-02-28 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물, 금속 산화물의 성막 방법, 및 금속 산화물의 성막 장치
DE112021004462T5 (de) * 2020-08-26 2023-06-07 Semiconductor Energy Laboratory Co., Ltd. Abscheidungsverfahren eines Metalloxids und Herstellungsverfahren einer Speichervorrichtung
JP2022078757A (ja) * 2020-11-13 2022-05-25 株式会社ジャパンディスプレイ 表示装置及び表示装置の駆動方法
KR102842127B1 (ko) * 2021-04-15 2025-08-05 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
KR102735414B1 (ko) * 2021-09-23 2024-11-28 성균관대학교산학협력단 용액연소법을 이용한 산화하프늄 기반 강유전체막 형성방법 및 이를 포함하는 네거티브커패시턴스 반도체소자
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