TWI491318B - 同步迴旋加速器 - Google Patents
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Description
此專利申請案描述一具有一在加速區域處間斷之粒子源之粒子加速器。
為將帶電粒子加速至高能量,已開發出許多類型之粒子加速器。一種類型之粒子加速器係一回旋加速器。一回旋加速器藉由向一真空室中之一個或多個D形電極施加一交變電壓(alternating voltage)而在一軸向磁場中加速帶電粒子。名稱D形電極係對早期回旋加速器中電極形狀之描述,雖然在某些回旋加速器中其可不像字母D。因加速粒子而產生之螺旋形路徑係垂至於磁場。在粒子螺旋出來時,在D形電極之間的間隙處施加一加速電場。該射頻(RF)電壓跨越D形電極之間的間隙形成一交變電場。將該RF電壓且因此該場同步化為帶電粒子在磁場中之軌道週期以便在該等粒子重複跨越該間隙時藉由該射頻波形對其進行加速。該等粒子之能量增加至一極大地超過所施加之RF電壓之峰電壓之能量位準。在該等帶電粒子加速時,其質量因相對論效應而增長。因此,該等粒子之加速變化間隙處之相(phase)匹配。
當前所採用之兩種類型之回旋加速器(一等時型回旋加速器及一同步迴旋加速器)以不同方式克服所加速粒子之相對論質量增加之挑戰。等時型回旋加速器將一恆定頻率之電壓與一隨半徑增加之磁場一起使用以維持適當加速。同步迴旋加速器使用一隨著增加的半徑而減小之磁場來提供軸向聚焦並變化交變電壓之頻率以匹配由帶電粒子之相對論速度所引起之質量增加。
一般而言,此專利申請案描述一種同步迴旋加速器,其包括:磁結構,用以向一腔提供一磁場;及一粒子源,用以向該腔提供一電漿柱。該粒子源具有一外殼以固持該電漿柱。該外殼在一加速區域處間斷以曝露該電漿柱。一電壓源,其經組態以向該腔提供一射頻(RF)電壓以在該加速區域處加速來自該電漿柱之粒子。上述同步迴旋加速器可單獨或組合地包含以下特徵中之一者或多者。
該磁場可超過2特斯拉(T),且該等粒子可以逐漸增加之半徑自該電漿柱向外螺旋形加速。該外殼可包括兩個部分,該兩個部分在該加速區域處完全分開以曝露該電漿柱。該電壓源可包括一電連接至一交變電壓之第一D形電極及一電連接至接地之第二D形電極。該粒子源之至少一部分可穿過該第二D形電極。該同步迴旋加速器可在該加速區域中包括一止擋。該止擋可用於阻礙來自該電漿柱之至少某些該等粒子之加速。該止擋可大致正交於該加速區域並可經組態以阻礙來自該電漿柱之具有某些相之粒子。
該同步迴旋加速器可包括供用於產生該電漿柱之陰極。該等陰極可操作以脈衝地產生一電壓,以使氣體電離從而產生該電漿柱。該等陰極可經組態而以約1kV至約4kV之間的電壓脈衝。該等陰極無需由一外部熱源加熱。該同步迴旋加速器可包括一電路以將來自該RF電壓之電壓耦合至該等陰極中之至少一者。該電路可包括一電容電路。
該等磁結構可包括磁軛。該電壓源可包括一電連接至一交變電壓之第一D形電極及一電連接至接地之第二D形電極。該第一D形電極及該第二D形電極可形成一可調諧共振電路。該磁場施加至其之該腔可包括一容納該可調諧共振電路之共振腔。
一般而言,此專利申請案亦描述一種粒子加速器,其包括:一管,其容納一氣體;一第一陰極,其毗鄰於該管之一第一端;及一第二陰極,其毗鄰於該管之一第二端。該第一陰極及該第二陰極係用於向該管施加電壓以自該氣體形成一電漿柱。可自該電漿柱抽取粒子以用於加速。一電路,其經組態以將來自一外部射頻(RF)場之能量耦合至該等陰極中之至少一者。上述粒子加速器可單獨或組合地包含以下特徵中之一者或多者。
該管可在一自該電漿柱抽取該等粒子之加速區域處間斷。該第一陰極及該第二陰極無需由一外部源加熱。該第一陰極可在該加速區域之一不同於該第二陰極的側上。
該粒子加速器可包括一電壓源以提供該RF場。該RF場可用於在該加速區域處加速來自該電漿柱之該等粒子。該能量可包括由該電壓源所提供之該RF場之一部分。該電路可包括一電容器以將來自該外部場之能量耦合至該第一陰極及該第二陰極中之至少一者。
該管可包括在該加速區域處之一間斷點處完全分開之一第一部分及一第二部分。該粒子加速器可在該加速區域處包括一止擋。該止擋可用於阻礙具有至少一種相之該等粒子進一步加速。
該粒子加速器可包括一電壓源以向該電漿柱提供該RF場。該RF場可用於在該加速區域處加速來自該電漿柱之該等粒子。該RF場可包括一小於15kV之電壓。磁軛可用於提供一跨越該加速區域之磁場。該磁場可大於約2特斯拉(T)。
一般而言,此專利申請案亦描述一種粒子加速器,其包括一彭寧離子真空計(PIG)源,該彭寧離子真空計(PIG)源包括在一加速區域處至少部分分開之一第一管部分及一第二管部分。該第一管部分及該第二管部分用於固持一延伸跨越該加速區域之電漿柱。一電壓源用於在該加速區域處提供一電壓。該電壓用於在該加速區域處加速離開該電漿柱之粒子。上述粒子加速器可單獨或組合地包含以下特徵中之一者或多者。
該第一管部分及該第二管部分可彼此完全分開。另一選擇為,僅該第一管部分之一個或多個部分可與該第二管部分之若干對應部分分開。在此後一組態中,該PIG源可包括該第一管部分之一部分與該第二管部分之間的一實體連接。該實體連接可使得加速離開該電漿柱之粒子能夠在逃離該電漿柱時完成一第一次轉動而不進入該實體連接。
該PIG源可穿過一電連接至接地之第一D形電極。一電連接至一交變電壓源之第二D形電極可在該加速區域提供該電壓。
該粒子加速器可包括一大致封閉該PIG源之結構。該粒子加速器可包括界定一容納該加速區域之腔之磁軛。該等磁軛可用於產生一跨越該加速區域之磁場。該磁場可至少為2特斯拉(T)。例如,該磁場可至少為10,5T。該電壓可包括一小於15kV之射頻(RF)電壓。
該粒子加速器可包括一個或多個供用於加速離開該粒子加速器之該等粒子之電極。至少一個陰極可用於產生該電漿柱。用於產生該電漿柱之該至少一個陰極可包括一冷陰極(例如,一個不由一外部源加熱之陰極)。一電容電路可將至少某些該電壓耦合至該冷陰極。該冷陰極可組態以脈衝地產生電壓以自該第一管部分及該第二管部分中之氣體產生該電漿柱。
可組合前述特徵中之任何者以形成本文中未具體描述之實施方案。
在隨附圖式及下文描述中闡明一項或多項實例之細節。其他特徵、態樣、及優點將自該描述、圖式及申請專利範圍變得顯而易見。
本文中描述一基於同步迴旋加速器之系統。然而,本文中所描述之電路及方法可用於任一類型之回旋加速器或粒子加速器。
參照圖1A及1B,一同步迴旋加速器1圍繞兩個間隔開之鐵磁磁極4a及4b包含電線圈2a及2b,其經組態以產生一磁場。磁極4a及4b係由軛狀物6a及6b之兩個相對部分(橫截面中所示)所界定。磁極4a與4b之間的空間界定真空室8或一可安裝於磁極4a與4b之間的單獨真空室。磁場強度一般係離真空室8中心之距離之一函式且主要由線圈2a及2b之幾何形狀及磁極4a及4b之形狀及材料之選擇來確定。
將加速電極界定為D形電極10及D形電極12,其間具有間隙13。D形電極10連接至一交變電壓電位,該交變電壓電位之頻率在一交替循環期間自高改變為低以考量一帶電粒子之增加之相對論質量並在徑向上減小由線圈2a及2b及磁極部分4a及4b所產生之磁場(自真空室8中心量測)。因此,將D形電極10稱為射頻(RF)D形電極。圖2中顯示D形電極10及12中之理想化交變電壓曲線且將在下文對其進行詳細討論。在此實例中,RF D形電極10係一半圓柱結構,其內部為空心。D形電極12(亦稱為"虛設D形電極")不需要為一空心圓柱結構,此乃因其在真空室壁14處接地。D形電極12(如圖1A及1B中所示)包含一金屬(例如,銅)條,其具有一經成形以匹配RF D形電極10中之一大致類似槽之槽。D形電極12可經成形以形成RF D形電極10之表面16之一鏡像影像。
離子源18位於真空室8中心周圍,並經組態以在該同步迴旋加速器中心處提供粒子(例如,質子)以用於加速,如下所述。萃取電極(extraction electrode)22指引該等帶電粒子自一加速區域進入萃取通道24中,藉此形成帶電粒子束26。因此,離子源18軸向插入至該加速區域中。
一同步迴旋加速器中所包含之D形電極10與12及其他硬體件藉助形成一跨越間隙13之振盪電場之振盪電壓輸入而界定一可調諧共振電路。結果係真空室8中之一共振腔。該共振腔之此共振頻率可經調諧以藉由使正掃頻之頻率同步來保持其Q因素高。在一項實例中,共振腔之共振頻率隨時間(例如,在約1毫秒(ms)內)在一介於約30兆赫(MHz)至約135MHz之間的範圍(VHF範圍)內移動或"掃頻"。在另一實例中,共振腔之共振頻率在約1ms內在約95MHz至約135MHz之間移動或"掃頻"。可以題為"Matching A Resonant Frequency Of A Resonant Cavity To A Frequency Of An Input Voltage"之美國專利申請案第11/948,359號(代理人檔案第17970-011001號)中所描述之方式來控制該腔之共振,該專利申請案之內容如全部闡明一樣以引用方式併入本文中。
Q因素係一共振系統之"品質"在其對接近於共振頻率之頻率之回應中之一量測。在此實例中,將Q因素界定為
Q=1/R x√(L/C),
其中R係該共振電路之有效電阻,L係電感且C係該共振電路之電容。
調諧機構可係(例如)一可變電感線圈或一可變電容。一可變電容器件可係一振動簧片或一旋轉電容器。在圖1A及1B中所示之實例中,調諧機構包含旋轉電容器28。旋轉電容器28包含由一馬達31驅動之旋轉葉片30。在馬達31之每一循環器件,由於葉片30與葉片32相嚙合,因此包含D形電極10及12以及旋轉電容器28之共振電路之電容增加且共振頻率減小。在該等葉片不嚙合時,該過程相反。因此,共振頻率係藉由改變共振電路之電容而改變。此用於以下目的:藉由一大因子減小產生高電壓所需之電力,該高電壓以加速粒子束所需之頻率施加於D形電極/虛設D形電極間隙處。葉片30及32之形狀可經機加工以形成共振頻率對時間之所需相依性。
葉片旋轉可與RF頻率產生同步,以便由同步迴旋加速器所界定之共振電路之頻率保持接近於施加至共振腔之交變電壓電位之頻率。此促進在RFD形電極上所施加之RF電力有效地轉變為RF電壓。
一真空泵送系統40將真空室8維持在一極低壓力以便不散射加速束(或提供相對較少散射)並大致防止自R FD形電極放電。
為在同步迴旋加速器中達成大致均勻加速,變化跨越D形電極間隙之電場之頻率及振幅以考量相對論質量增加及磁場的徑向變化亦維持粒子束之聚焦。磁場之徑向變化量測為離一帶電粒子之一向外螺旋形軌跡中心之一距離。
圖2係一可為在一同步迴旋加速器中加速帶電粒子所需之理想化波形之一圖解說明。其僅顯示少數波形循環且無須表示理想頻率及振幅調變曲線。圖2圖解說明同步迴旋加速器中所使用之波形之時變振幅及頻率性質。隨著粒子之相對論質量增加,頻率自高改變為低,而粒子速度接近光速之一顯著部分。
離子源18部署成接近於同步迴旋加速器1的磁心以使粒子出於同步迴旋加速器中平面處,在其處其可藉由RF場(電壓)行動。離子源可具有一彭寧離子真空計(PIG)幾何形狀。在該PIG幾何形狀中,兩個高電壓陰極放置成幾乎彼此相對。舉例而言,一個陰極可在加速區域之一個側上且一個陰極可在加速區域之另一側上並與磁場線成直線。該源組件之虛設D形電極外殼12可處於接地電位。該陽極包含一朝向加速區域延伸之管。在一相對小量的氣體(例如,氫/H2
)佔據該管中該等陰極之間的一區域時,可藉由向該等陰極施加一電壓而自該氣體形成一電漿柱。所施加之電壓致使電子實質平行於管壁沿磁場線流動,並使集中在該管內部之氣體分子電離,藉此形成電漿柱。
圖3A及3B中顯示一供用於同步迴旋加速器1中之PIG幾何形狀離子源18。參照圖3A,離子源18包含一容納一用於接收氣體之氣體饋送件39之發射體側38a及一反射體側38b。如下所述,一外殼或管44固持該氣體。圖3B顯示穿過虛設D形電極12並毗鄰於RF D形電極10之離子源18。在操作中,RF D形電極10與虛設D形電極12之間的磁場致使粒子(例如,質子)向外加速。該加速係圍繞電漿柱呈螺旋形,同時粒子至電漿柱半徑逐漸增加。圖5及6中描繪該標記為43之螺旋形加速。螺旋之曲率半徑相依於一粒子之質量、由RF場賦予給該粒子之能量及磁場強度。
在磁場高時,可變得難以將足夠的能量賦予給一粒子以使其具有一足夠大的曲率半徑以在加速期間在其初始轉動時避開離子源之實體外殼。磁場在離子源區域中相對高,例如,大約為2特斯拉(T)或更多(例如,8T、8.8T、8.9T、9T、10.5T或更多)。由於此相對高的磁場,對於能量粒子初始粒子至離子源半徑相對小,其中低能量粒子包含自電漿柱首先抽取之粒子。舉例而言,此半徑可大約為1mm。由於半徑如此小(至少在初始時),因此某些粒子可與離子源之外殼面積接觸,藉此防止此等粒子之進一步向外加速。因此,離子源18之外殼被間斷或分開以形成兩部分,如圖3B中所示。亦即,在加速區域41處(例如,在約粒子欲自該離子源抽取之點處)移除離子源之外殼之一部分。此間斷在圖3B中標記為45。亦可移除該外殼以在加速區域上及下獲得若干距離。亦可或亦可不移除加速區域處之所有或部分虛設D形電極12。
在圖3A及3B之實例中,外殼44包含一管,該管固持一容納欲被加速之粒子之電漿柱。如圖所示,該管在不同點處可具有不同直徑。該管可駐存於虛設D形電極12內,雖然此並不必須。完全移除該管之一圍繞同步迴旋加速器之一正中平面之部分,從而導致一外殼由兩個分開部分組成,其中在該等部分之間具有一間斷45。在此實例中,該間斷係約1毫米(mm)至3mm(以及,移除該管之約1mm至3mm)。該管之移除量可足夠大以准許粒子自電漿柱加速,但足夠小以妨礙電漿柱在間斷部分中之顯著耗散。
藉由在粒子加速區域處移除該實體結構(此處係該管),粒子(例如)在相對高磁場存在之情形下可以相對小的半徑做初始轉動,而不與阻止進一步加速之實體結構接觸。端視磁場及RF場之強度,該等初始轉動甚至可向後跨越穿過該電漿柱。
該管可具有一相對小的內徑,例如約2mm。此導致一亦相對狹窄的電漿柱,且因此提供一相對小組之粒子可在此處開始加速之原始徑向位置。該管亦離用於產生電漿柱之陰極46足夠遠-在此實例中,距每一陰極約10mm。該兩個特徵經組合以將流入至同步迴旋加速器中之氫(H2
)氣量減小為小於每分鐘1標準立方公分(SCCM),藉此使得同步迴旋加速器能夠與進入至同步迴旋加速器RF/束腔中之相對小的真空傳導孔及相對小的容量真空泵送系統(例如,約每秒500升)一起操作。
該管之間斷亦支持RF場至電漿柱中之增加之穿透。亦即,由於在間斷處不存在實體結構,因此該RF場可易於到達電漿柱。此外,該管中之間斷允許使用不同的RF場自電漿柱加速粒子。例如,可使用較低RF場來加速該等粒子。此可減小系統用於產生RF場之電力要求。在一項實例中,一20千瓦(kW)RF系統產生一15千伏(kV)之RF場來加速來自電漿柱之粒子。使用較低RF場減小RF系統冷卻要求及RF電壓均衡要求。
在本文中所描述之同步迴旋加速器中,使用一共振萃取系統來萃取一粒子束。亦即,該束之徑向振盪振幅因加速器內部之一磁性微擾而增加,此與該等振盪共振。在使用一共振萃取系統時,萃取效率藉由限制內部束之相空間範圍而得以改良。注意磁場及RF場產生結構之設計,該束在萃取時之相空間範圍係由加速開始時(例如,在自離子源出現時)之相空間範圍來確定。因此,相對少的束可在進入至萃取通道時丟失且來自該加速器之背景輻射可減小。
可提供一實體結構或止擋來控制允許自同步迴旋加速器之中心區域逃離之粒子之相。圖6中顯示此止擋51之一實例。止擋51充當一阻礙具有某些相之粒子之障礙物。亦即,防止撞擊該止擋之粒子進一步加速,而穿過該止擋之粒子繼續其加速離開該同步迴旋加速器。如圖6中所示,一止擋可接近於電漿柱以選擇在粒子能量低(例如,小於50kV)之情形下粒子之初始轉動期間之相。另一選擇為,一止擋可相對於電漿柱位於任一其他點處。在圖6中所示之實例中,一單個止擋位於虛設D形電極12上。然而,每一D形電極可存在多於一個止擋(未顯示)。
陰極46可係一"冷"陰極。一冷陰極可係不由一外部熱源加熱之一陰極。同樣,可使該等陰極產生脈衝,此意味著其週期性地而非連續地輸出信號叢發。在該等陰極係冷陰極且使該等陰極產生脈衝時,該等陰極經受較少耗損且因此可持續相對長時間。此外,使該等陰極產生脈衝可消除水冷卻該等陰極之需要。在一項實施方案中,陰極46以一相對高的電壓(例如,約1kV至約4kV)及約50mA至約200mA之適中峰陰極放電電流、以一約0.1%至約1%或2%之間的工作循環且以約200Hz至約1KHz之間的重複速率脈衝。
冷陰極有時可引起定時抖動及點燃延遲。亦即,在陰極中缺少足夠的熱可影響回應於所施加之電壓使電子放電之時間。舉例而言,在對陰極進行足夠加熱時,放電可比期盼出現地晚或早數個微秒。此可影響電漿柱之形成,且因此可影響粒子加速器之操作。為抵消該等效應,可將來自腔8中之RF場之電壓耦合至該等陰極。陰極46以其他方式裝入於一金屬中,此形成一法拉第屏蔽以大致將該等陰極屏蔽離該RF場。在一項實施方案中,該RF能量之一部分可自該RF場耦合至陰極,例如,約100V可自該RF場耦合至該等陰極。圖3B顯示一實施方案,其中一電容電路54(此處一電容器)由該RF場充電並向一陰極46提供電壓。可使用一RF扼流圈及DC饋送件來對該電容器充電。可針對另一陰極46構建一對應配置(未顯示)。在某些實施方案中,所耦合之RF電壓可減小定時抖動並將放電延遲減小為約100奈秒(ns)或更少。
圖7中顯示一替代實施例。在此實施例中,移除PIG源外殼之一實質性部分而非全部,從而部分地曝露電漿束。因此,該PIG外殼之若干部分與其配對部分分開,但並不像以上情形那樣完全分開。剩餘部分61實體接觸該PIG源之第一管部分62及第二管部分63。在此實施例中,移除足夠的外殼以使得粒子能夠實施至少一次轉動(軌道),而不碰撞該外殼之剩餘部分61。在一項實例中,第一次轉動半徑可係1mm,雖然亦可實施其他轉動半徑。圖7中所示之實施例可與本文中所述之任一其他特徵組合。
本文中所述之粒子源及隨附特徵並不限於用於一同步迴旋加速器,而是可用於任一類型之粒子加速器或回旋加速器。除彼等具有一PIG幾何形狀之離子源之外,其他離子源可用於任一類型之粒子加速器,且可具有間斷部分、冷陰極、止擋及/或本文中所述之任一其他特徵。
本文中所述之不同組件實施方案可經組合以形成上文未具體闡明之其他實施例。本文中未具體描述之其他實施方案亦在以下申請專利範圍之範疇內。
2a...線圈
2b...線圈
4a...磁極
4b...磁極
6b...軛狀物
6a...軛狀物
8...真空室
10...D形電極
12...D形電極
13...間隙
14...真空室壁
16...表面
18...離子源
22...萃取電極
24...萃取通道
26...帶電粒子束
28...旋轉電容器
30...旋轉葉片
31...馬達
32...葉片
38a...發射體側
38b...反射體側
39...氣體饋送件
40...真空泵送系統
41...加速區域
43...螺旋形加速
44...外殼
45...間斷
46...陰極
51...止擋
54...電容電路
61...剩餘部分
62...第一管部分
63...第二管部分
圖1A係一同步迴旋加速器之一橫截面圖。
圖IB係圖1A中所示之同步迴旋加速器之一側面橫截面圖。
圖2係一可用於在圖1A及1B之同步迴旋加速器中加速帶電粒子之理想化波形之一圖解說明。
圖3A係一粒子源(例如,一彭寧離子真空計源)之一側視圖。
圖3B係圖3A之粒子源之一穿過一虛設D形電極並毗鄰於一RFD形電極之部分之一特寫側視圖。
圖4係顯示一來自一由該粒子源所產生之電漿柱之粒子之螺旋形加速之圖3之粒子源之一側視圖。
圖5係圖4之粒子源之一透視圖。
圖6係容納一用於阻礙具有一種或多種相之粒子之止擋之圖4之粒子源之一透視圖。
圖7係一其中移除該離子源之一實質性部分之替代實施例之一透視圖。
10...D形電極
12...D形電極
18...離子源
44...外殼
41...加速區域
45...間斷
46...陰極
54...電容電路
Claims (41)
- 一種同步迴旋加速器(synchrocyclotron),其包括:磁結構,其用以向一腔(cavity)提供一磁場;一粒子源,其用以向該腔提供一電漿柱(column),該粒子源具有一外殼以固持該電漿柱,該外殼在一加速區域處間斷(interrupt)以曝露該電漿柱,其中該外殼經間斷以使該外殼在該加速區域處完全分開,或使該外殼之一部分在該加速區域處實體連接;及一電壓源,其用以向該腔提供一射頻(RF)電壓以在該加速區域處加速來自該電漿柱之粒子;其中在該外殼之部分實體連接的情況下,該外殼之該部分具有允許粒子自該電漿柱加速以實施至少一次轉動(turn)而不碰撞該外殼之該部分之結構。
- 如請求項1之同步迴旋加速器,其中該磁場超過2特斯拉(T),且該等粒子以逐漸增加之半徑自該電漿柱向外螺旋形移動。
- 如請求項1之同步迴旋加速器,其中該外殼包括兩個部分,該兩個部分在該加速區域處完全分開以曝露該電漿柱。
- 如請求項1之同步迴旋加速器,其中該電壓源包括一電連接至一交變電壓之第一D形電極及一電連接至接地之第二D形電極;且其中該粒子源之至少一部分穿過該第二D形電極。
- 如請求項1之同步迴旋加速器,其進一步在該加速區域 中包括一止擋,該止擋用於阻礙來自該電漿柱之至少某些該等粒子之加速。
- 如請求項5之同步迴旋加速器,其中該止擋大致正交於該加速區域並經組態以阻礙來自該電漿柱之具有某些相(phase)之粒子。
- 如請求項1之同步迴旋加速器,其進一步包括:供用於產生該電漿柱之多個陰極,該等陰極可操作以脈衝地產生一電壓以使氣體電離,從而產生該電漿柱;其中該等陰極不由一外部熱源加熱。
- 如請求項7之同步迴旋加速器,其中該等陰極經組態而以約1kV至約4kV之間的電壓脈衝。
- 如請求項7之同步迴旋加速器,其進一步包括:一電路,用以將來自該RF電壓之電壓耦合至該等陰極中之至少一者。
- 如請求項9之同步迴旋加速器,其中該電路包括一電容電路。
- 如請求項1之同步迴旋加速器,其中該等磁結構包括磁軛,其中該電壓源包括一電連接至一交變電壓之第一D形電極及一電連接至接地之第二D形電極,其中該第一D形電極及該第二D形電極形成一可調諧共振電路,且其中該腔包括一容納該可調諧共振電路之共振腔。
- 一種同步迴旋加速器,其包括:一管,其容納一氣體;一第一陰極,其毗鄰於該管之一第一端;及 一第二陰極,其毗鄰於該管之一第二端,該第一陰極及該第二陰極向該管施加電壓以自該氣體形成一電漿柱;其中可自該電漿柱抽取(drawn)粒子以用於加速;及一電路,其用以將來自一外部射頻(RF)場之能量耦合至該等陰極中之至少一者;其中該管在加速該等粒子之一加速區域處間斷以曝露該電漿柱,其中該管經間斷以使該管在該加速區域處完全分開成兩個部分,或使該管之一部分在該加速區域處實體連接;其中在該管之部分實體連接的情況下,該管之該部分具有允許粒子自該電漿柱加速以實施至少一次轉動而不碰撞該管之該部分之結構。
- 如請求項12之同步迴旋加速器,其中該第一陰極及該第二陰極不由一外部源加熱。
- 如請求項12之同步迴旋加速器,其中該第一陰極係在該加速區域之一不同於該第二陰極的側上。
- 如請求項13之同步迴旋加速器,其進一步包括:一電壓源,其用以提供該RF場,該RF場用於在該加速區域處加速來自該電漿柱之該等粒子。
- 如請求項15之同步迴旋加速器,其中該能量包括由該電壓源所提供之該RF場之一部分。
- 如請求項13之同步迴旋加速器,其中該電路包括一電容器以將來自該外部射頻場之能量耦合至該第一陰極及該 第二陰極中之至少一者。
- 如請求項13之同步迴旋加速器,其中該管包括在該加速區域處完全分開的一第一部分及一第二部分。
- 如請求項13之同步迴旋加速器,其進一步包括:一在該加速區域處之止擋,該止擋阻礙具有至少一種相之該等粒子進一步加速。
- 如請求項13之同步迴旋加速器,其進一步包括:一電壓源,其用以向該電漿柱提供該RF場,該RF場用於在該加速區域處加速來自該電漿柱之該等粒子,其中該RF場包括小於15kV之電壓;及磁軛(yoke),其用以提供跨越該加速區域之一磁場,該磁場大於約2特斯拉(T)。
- 一種同步迴旋加速器,其包括:一彭寧離子真空計(Penning Ion Gauge,PIG)源,其包括一第一管部分及一第二管部分,該第一管部分及該第二管部分用於固持延伸跨越一加速區域之一電漿柱,在該加速區域處粒子自該電漿柱加速;及一電壓源,用以在該加速區域處提供一電壓,該電壓用於在該加速區域處加速粒子離開該電漿柱;其中該第一管部分及該第二管部分在該加速區域處完全分開,或該第一管部分與該第二管部分之間在該加速區域處存在一連接;其中在該連接存在的情況下,該連接具有允許粒子自該電漿柱加速以實施至少一次轉動而不碰撞該連接之結 構。
- 如請求項21之同步迴旋加速器,其中該PIG源包括該第一管部分之一部分與該第二管部分之間的一實體連接,該實體連接使得加速離開該電漿柱之粒子能夠在逃離該電漿柱時完成一第一轉動而不進入該實體連接。
- 如請求項21之同步迴旋加速器,其中該PIG源穿過電連接至接地之一第一D形電極,且其中電連接至一交變電壓源之一第二D形電極在該加速區域提供該電壓。
- 如請求項21之同步迴旋加速器,其進一步包括:磁軛,其界定容納該加速區域之一腔,該等磁軛用於產生跨越該加速區域之一磁場。
- 如請求項24之同步迴旋加速器,其中該磁場至少為2特斯拉(T)。
- 如請求項25之同步迴旋加速器,其中該磁場至少為10.5T。
- 如請求項26之同步迴旋加速器,其中該電壓包括小於15kV之一射頻(RF)電壓。
- 如請求項21之同步迴旋加速器,其進一步包括供在使離開該同步迴旋加速器之該等粒子加速中使用的一個或多個電極。
- 如請求項21之同步迴旋加速器,其進一步包括:供在產生該電漿柱中使用的至少一個陰極,該至少一個陰極包括一冷陰極;及一電容電路,其用以將至少某些該電壓耦合至該至少 一個陰極。
- 如請求項29之同步迴旋加速器,其中該至少一個陰極經組態以脈衝地產生電壓以自該第一管部分及該第二管部分中之氣體產生該電漿柱。
- 一種同步迴旋加速器,其包括:一管,其容納一氣體;一第一陰極,其毗鄰於該管之一第一端;一第二陰極,其毗鄰於該管之一第二端,該第一陰極及該第二陰極向該管施加電壓以自該氣體形成一電漿柱;其中可自該電漿柱抽取粒子以用於加速;一電路,其用以將來自一外部射頻(RF)場之能量耦合至該等陰極中之至少一者;及磁結構,其用以提供跨越加速該等粒子之一加速區域之一磁場,該磁場大於約2特斯拉(T);其中該管在該加速區域處間斷以曝露該電漿柱,且其中該管經間斷以使該管在該加速區域處完全分開成兩個部分,或使該管之一部分在該加速區域處實體連接;其中在該管之部分實體連接的情況下,該管之該部分具有允許粒子自該電漿柱加速以實施至少一次轉動而不碰撞該管之該部分之結構。
- 如請求項31之同步迴旋加速器,其中該第一陰極及該第二陰極不由一外部源加熱。
- 如請求項31之同步迴旋加速器,其中該第一陰極係在該 加速區域之一不同於該第二陰極的側上。
- 如請求項33之同步迴旋加速器,其進一步包括:一電壓源,其用以提供該RF場,該RF場用於在該加速區域處加速來自該電漿柱之該等粒子。
- 如請求項34之同步迴旋加速器,其中該能量包括由該電壓源所提供之該RF場之一部分。
- 如請求項32之同步迴旋加速器,其中該電路包括一電容器以將來自該外部射頻場之能量耦合至該第一陰極及該第二陰極中之至少一者。
- 如請求項32之同步迴旋加速器,其中該管包括在該加速區域處完全分開的一第一部分及一第二部分。
- 如請求項32之同步迴旋加速器,其進一步包括:一在該加速區域處之止擋,該止擋阻礙具有至少一種相之該等粒子進一步加速。
- 如請求項32之同步迴旋加速器,其進一步包括:一電壓源,其用以向該電漿柱提供該RF場,該RF場用於在該加速區域處加速來自該電漿柱之該等粒子,其中該RF場包括小於15kV之電壓;及其中該等磁結構包括磁軛。
- 如請求項31之同步迴旋加速器,其中該磁場大於8T。
- 如請求項31之同步迴旋加速器,其中該磁場大於10.5T。
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US8581523B2 (en) | 2013-11-12 |
EP2232961B1 (en) | 2017-03-08 |
CN101933405B (zh) | 2013-07-17 |
WO2009070588A1 (en) | 2009-06-04 |
EP2232961A4 (en) | 2014-07-09 |
TW200930160A (en) | 2009-07-01 |
ES2626631T3 (es) | 2017-07-25 |
USRE48317E1 (en) | 2020-11-17 |
EP2232961A1 (en) | 2010-09-29 |
CN103347363B (zh) | 2016-06-01 |
CN103347363A (zh) | 2013-10-09 |
US20090140672A1 (en) | 2009-06-04 |
US8970137B2 (en) | 2015-03-03 |
CA2706952A1 (en) | 2009-06-04 |
US20140062344A1 (en) | 2014-03-06 |
JP2011505670A (ja) | 2011-02-24 |
CN101933405A (zh) | 2010-12-29 |
JP5607536B2 (ja) | 2014-10-15 |
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