JP2011505670A - 中断粒子源 - Google Patents
中断粒子源 Download PDFInfo
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- JP2011505670A JP2011505670A JP2010536130A JP2010536130A JP2011505670A JP 2011505670 A JP2011505670 A JP 2011505670A JP 2010536130 A JP2010536130 A JP 2010536130A JP 2010536130 A JP2010536130 A JP 2010536130A JP 2011505670 A JP2011505670 A JP 2011505670A
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- voltage
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H13/00—Magnetic resonance accelerators; Cyclotrons
- H05H13/02—Synchrocyclotrons, i.e. frequency modulated cyclotrons
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- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Particle Accelerators (AREA)
- Plasma Technology (AREA)
Abstract
Description
2b 電気コイル
4a 磁極
4b 磁極
6a ヨークの部分
6b ヨークの部分
8 真空チャンバ
10 ディー
12 ディー、ダミーディー
13 ギャップ
14 真空チャンバ壁
16 ディーの面
18 イオン源
22 抽出電極
24 抽出チャネル
26 荷電粒子ビーム
28 回転コンデンサ
30 ブレード
31 モータ
32 ブレード
38a エミッタ側
38b 反射器側
39 ガス供給器
40 真空ポンプシステム
41 加速領域
43 らせん状加速
44 ハウジング
45 中断部
46 陰極
51 阻止物
54 容量性回路
61 ハウジングが残っている部分
62 PIG源の第1の管部分
63 PIG源の第2の管部分
Claims (32)
- 空洞に磁界を与える磁気構造物と、
前記空洞にプラズマカラムを与える粒子源であって、前記プラズマカラムを保持するハウジングを有し、前記ハウジングが、前記プラズマカラムを露出するように加速領域で中断されている、粒子源と、
前記加速領域で前記プラズマカラムからの粒子を加速するために前記空洞に高周波(RF)電圧を与える電圧源とを含むシンクロサイクロトロン。 - 前記磁界が2テスラ(T)を上回り、前記粒子が、累進的に半径が増大するらせんの形で前記プラズマカラムから外に向かって加速する、請求項1に記載のシンクロサイクロトロン。
- 前記ハウジングが、前記プラズマカラムを露出するように前記加速領域で完全に分離された2つの部分を含む、請求項1に記載のシンクロサイクロトロン。
- 前記電圧源が、交流電圧に電気的に接続された第1のディーと、グランドに電気的に接続された第2のディーとを含み、
前記粒子源の少なくとも一部が前記第2のディーを貫通する、請求項1に記載のシンクロサイクロトロン。 - 前記プラズマカラムからの前記粒子のうちの少なくとも一部の加速を阻止するための阻止物を前記加速領域にさらに含む、請求項1に記載のシンクロサイクロトロン。
- 前記阻止物が前記加速領域とほぼ直交し、前記プラズマカラムからの特定の位相の粒子を阻止するように構成される、請求項5に記載のシンクロサイクロトロン。
- 前記プラズマカラムを生成する際に使用するための陰極であって、ガスをイオン化して前記プラズマカラムを生成するために電圧をパルス化するように動作可能な陰極をさらに含み、
前記陰極が外部熱源によって加熱されない、請求項1に記載のシンクロサイクロトロン。 - 前記陰極が約1kVから約4kVの間の電圧でパルス動作するように構成される、請求項7に記載のシンクロサイクロトロン。
- 前記RF電圧からの電圧を前記陰極の少なくとも1つに結合する回路をさらに含む、請求項7に記載のシンクロサイクロトロン。
- 前記回路が容量性回路を含む、請求項9に記載のシンクロサイクロトロン。
- 前記磁気構造物が磁気ヨークを含み、前記電圧源が、交流電圧に電気的に接続された第1のディーと、グランドに電気的に接続された第2のディーとを含み、前記第1のディーと前記第2のディーが調整可能共振回路を形成し、前記空洞が、前記調整可能共振回路を収容する共振空洞を含む、請求項1に記載のシンクロサイクロトロン。
- ガスを収容する管と、
前記管の第1の端部に隣接する第1の陰極と、
前記管の第2の端部に隣接する第2の陰極とを含み、前記第1および第2の陰極が前記管に電圧を印加して前記ガスからプラズマカラムを形成し、
粒子が、加速させるために前記プラズマカラムから引き出されて得られ、さらに
外部高周波(RF)電界からエネルギーを前記陰極の少なくとも1つに結合する回路を含む粒子加速器。 - 前記管が、前記プラズマカラムから前記粒子が引き出される加速領域で中断され、
前記第1の陰極および前記第2の陰極が外部熱源によって加熱されない、請求項12に記載の粒子加速器。 - 前記第1の陰極が前記加速領域の、前記第2の陰極とは異なる側にある、請求項12に記載の粒子加速器。
- 前記プラズマカラムからの前記粒子を前記加速領域で加速するための前記RF電界を与える電圧源をさらに含む、請求項13に記載の粒子加速器。
- 前記エネルギーが、前記電圧源によって与えられる前記RF電界の一部分を含む、請求項15に記載の粒子加速器。
- 前記回路が、前記外部電界から前記エネルギーを前記第1の陰極および前記第2の陰極の少なくとも1つに結合するコンデンサを含む、請求項13に記載の粒子加速器。
- 前記管が、前記加速領域の中断箇所で完全に分離されている第1の部分および第2の部分を含む、請求項13に記載の粒子加速器。
- 前記加速領域に、少なくとも1つの位相の前記粒子がさらに加速しないように阻止するための阻止物をさらに含む、請求項13に記載の粒子加速器。
- 前記プラズマカラムからの前記粒子を前記加速領域で加速するためのRF電界を前記プラズマカラムに与える電圧源であって、前記RF電界が15kV未満の電圧を含む電圧源と、
前記加速領域と交差する約2テスラ(T)より大きい磁界を形成するための磁気ヨークとをさらに含む、請求項13に記載の粒子加速器。 - 加速領域で少なくとも部分的に分離されている第1の管部分および第2の管部分を含むペニングイオンゲージ(PIG)源であって、前記第1の管部分および前記第2の管部分が、前記加速領域を横切って延びるプラズマカラムを保持する、ペニングイオンゲージ(PIG)源と、
前記加速領域でプラズマカラムからの粒子を加速する前記加速領域の電圧を与える電圧源とを含む粒子加速器。 - 前記第1の管部分と前記第2の管部分が互いに完全に分離される、請求項21に記載の粒子加速器。
- 前記第1の管部分の一部分が前記第2の管部分の対応する部分から分離され、
前記PIG源が、前記第1の管部分の一部と前記第2の管部分との間に物理的接続部を含み、前記物理的接続部が、前記プラズマカラムから出て加速する粒子が前記物理的接続部にぶつかることなく前記プラズマカラムから脱出して最初の旋回を完了できるようにする、請求項21に記載の粒子加速器。 - 前記PIG源が、グランドに電気的に接続された第1のディーを貫通し、交流電圧源に電気的に接続された第2のディーが前記加速領域の前記電圧を与える、請求項21に記載の粒子加速器。
- 前記加速領域を収容する空洞を画定する磁気ヨークであって、前記加速領域全体にわたって磁界を発生する磁気ヨークをさらに含む、請求項21に記載の粒子加速器。
- 前記磁界が少なくとも2テスラ(T)である、請求項25に記載の粒子加速器。
- 前記磁界が少なくとも10.5Tである、請求項26に記載の粒子加速器。
- 前記電圧が、15kV未満の高周波(RF)電圧を含む、請求項27に記載の粒子加速器。
- 前記粒子加速器から出る粒子を加速する際に使用するための1つまたは複数の電極をさらに含む、請求項21に記載の粒子加速器。
- 前記プラズマカラムを生成する際に使用するための、冷陰極を含む少なくとも1つの陰極と、
前記電圧の少なくとも一部を前記少なくとも1つの陰極に結合する容量性回路とをさらに含む、請求項21に記載の粒子加速器。 - 前記少なくとも1つの陰極が、前記第1の管部分内および前記第2の管部分内でガスから前記プラズマカラムを生成するために、電圧をパルス化するように構成される、請求項30に記載の粒子加速器。
- 前記PIG源を実質的に取り囲む構造物をさらに含む、請求項31に記載の粒子加速器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/948,662 US8581523B2 (en) | 2007-11-30 | 2007-11-30 | Interrupted particle source |
US11/948,662 | 2007-11-30 | ||
PCT/US2008/084695 WO2009070588A1 (en) | 2007-11-30 | 2008-11-25 | Interrupted particle source |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011505670A true JP2011505670A (ja) | 2011-02-24 |
JP5607536B2 JP5607536B2 (ja) | 2014-10-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010536130A Expired - Fee Related JP5607536B2 (ja) | 2007-11-30 | 2008-11-25 | シンクロサイクロトロン |
Country Status (8)
Country | Link |
---|---|
US (3) | US8581523B2 (ja) |
EP (1) | EP2232961B1 (ja) |
JP (1) | JP5607536B2 (ja) |
CN (2) | CN101933405B (ja) |
CA (1) | CA2706952A1 (ja) |
ES (1) | ES2626631T3 (ja) |
TW (1) | TWI491318B (ja) |
WO (1) | WO2009070588A1 (ja) |
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Also Published As
Publication number | Publication date |
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TWI491318B (zh) | 2015-07-01 |
US20140062344A1 (en) | 2014-03-06 |
JP5607536B2 (ja) | 2014-10-15 |
EP2232961A4 (en) | 2014-07-09 |
US20090140672A1 (en) | 2009-06-04 |
US8581523B2 (en) | 2013-11-12 |
CA2706952A1 (en) | 2009-06-04 |
EP2232961B1 (en) | 2017-03-08 |
ES2626631T3 (es) | 2017-07-25 |
WO2009070588A1 (en) | 2009-06-04 |
US8970137B2 (en) | 2015-03-03 |
CN103347363A (zh) | 2013-10-09 |
CN101933405A (zh) | 2010-12-29 |
CN103347363B (zh) | 2016-06-01 |
TW200930160A (en) | 2009-07-01 |
CN101933405B (zh) | 2013-07-17 |
EP2232961A1 (en) | 2010-09-29 |
USRE48317E1 (en) | 2020-11-17 |
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