TWI414580B - 黏著帶及使用該黏著帶而成之半導體裝置 - Google Patents

黏著帶及使用該黏著帶而成之半導體裝置 Download PDF

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Publication number
TWI414580B
TWI414580B TW096140523A TW96140523A TWI414580B TW I414580 B TWI414580 B TW I414580B TW 096140523 A TW096140523 A TW 096140523A TW 96140523 A TW96140523 A TW 96140523A TW I414580 B TWI414580 B TW I414580B
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Taiwan
Prior art keywords
adhesive tape
semiconductor wafer
solder
resin
semiconductor
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TW096140523A
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English (en)
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TW200829678A (en
Inventor
Satoru Katsurayama
Tomoe Yamashiro
Takashi Hirano
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Sumitomo Bakelite Co
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Publication of TW200829678A publication Critical patent/TW200829678A/zh
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Publication of TWI414580B publication Critical patent/TWI414580B/zh

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
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Description

黏著帶及使用該黏著帶而成之半導體裝置
本發明係關於一種黏著帶及使用該黏著帶而成之半導體裝置。更詳而言之，本發明係在可對應於半導體積體電路之高密度化的要求之晶片堆疊(chip on chip)型的半導體裝置中，用於半導體晶片間之電性連接之黏著帶以及使用該黏著帶而構成之半導體裝置。
近年，隨著電子機器之高功能化及小型化之要求，持續開發半導體積體電路之高密度封裝技術。如此之封裝技術之一，於半導體晶片上具有以面朝下搭載其他之半導體晶片之晶片堆疊型的系統級封裝(SiP)。此構造係可謀求封裝之薄型化，就電性連接信賴性而言優異，故受注目。
在晶片堆疊型SiP中，半導體晶片間之連接係以隔介微細之凸塊的覆晶(flip chip)方式來實施。此時，在用以確保電性連接強度及機械連接強度之半導體晶片間係注入密封樹脂(底部填充(underfill)密封)。然而，在底部填充密封步驟中，注入於半導體晶片間之密封樹脂會滲出而污染下段之半導體晶片表面所設有之外部電極，有無法進行線路黏合之問題。
另外，隔介異方導電薄膜而一次進行端子間的電性連接與密封之方法早已為人知。例如，在日本特開昭61－276873號公報(專利文獻1)中係已記載含有焊料粒子之黏著帶。在同文獻中係藉由使該黏著帶介置於構件間並使其熱壓接，俾於兩構件之電性連接部間介置焊料粒子，於其他部分填充樹脂成分之方法已被記載。又，在日本專利第3769688號公報(專利文獻2)中，係記載一種使用導電性黏著劑之端子間的連接方法，而該導電性黏著劑係含有導電性粒子與於該導電性粒子之融點不會硬化終止之樹脂成分。
然而，在此等方法中，於晶片堆疊型SiP中，很難確保半導體晶片間之電性連接信賴性或密封後之樹脂的耐離子遷移性，而無法實現半導體積體電路之更高密度化。
在如此之狀況下，期盼開發出於晶片堆疊型SiP(本說明書中係「晶片堆疊型的半導體裝置」)，一面確保電性連接信賴性及樹脂硬化後之耐離子遷移性，一面可以一次進行半導體晶片間之電性連接與密封之黏著帶。又，尋求開發出可對應於半導體積體電路之高密度化的要求之半導體裝置。
本發明人等係為了解決上述課題，經專心研究之結果，發現以特定之組成混合薄膜形成性樹脂成分與硬化性樹脂成分，進一步藉由調配具有助融劑(flux)活性之硬化劑，俾於晶片堆疊型的半導體裝置中，可以一次進行半導體晶片間之電性連接與密封，且可得到電性連接信賴性及樹脂硬化後之耐離子遷移性等特性優之黏著帶，終完成本發明。
亦即，本發明係提供以下之黏著帶及半導體裝置等。
[1]一種黏著帶，其係於晶片堆疊型之半導體裝置中，用以電性連接半導體晶片與半導體晶片之黏著帶，其特徵在於含有：(A)薄膜形成性樹脂10至50重量%；(B)硬化性樹脂30至80重量%；(C)具有助融劑活性之硬化劑1至20重量%。
[2]一種黏著帶，其係於具備第1半導體晶片與第2半導體晶片、且前述第1半導體晶片之電路面與前述第2半導體晶片之電路面係相對向配設而構成之晶片堆疊型之半導體裝置中，用以電性連接前述第1半導體晶片與前述第2半導體晶片之黏著帶，其特徵在於含有：(A)薄膜形成性樹脂10至50重量%；(B)硬化性樹脂30至80重量%；(C)具有助融劑活性之硬化劑1至20重量%。
[3]如[1]項或[2]項之黏著帶，其中，前述薄膜形成性樹脂為選自由(甲基)丙烯酸系樹脂、苯氧樹脂及聚醯亞胺樹脂所構成之群組的至少一種。
[4]如[1]至[3]項中任一項的黏著帶，其中，前述硬化性樹脂為環氧樹脂。
[5]如[1]至[4]項中任一項的黏著帶，其中，具有前述助融劑活性之硬化劑為選自由脂肪族二羧酸及具有羧基與酚性羥基之化合物所構成之群組的至少一種。
[6]如[5]項之黏著帶，其中，前述脂肪族二羧酸為癸二酸。
[7]如[5]項之黏著帶，其中，具有前述羧基與酚性羥基之化合物為選自酚酞啉(phenolphthalin)及龍膽酸(gentisic acid)之至少一種。
[8]一種黏著帶，其係如[1]至[7]項中任一項的黏著帶，且於該黏著帶上配置直徑500 μm之含錫的焊料球，以比該焊料球之融點高30℃之溫度加熱20秒後，以式(I)所示之焊料潤濕展開率為40%以上：焊料潤濕展開率(%)＝[{(焊料球之直徑)－(潤濕展開後之焊料的厚度)}/(焊料球之直徑)]×100 (I)。
[9]如[8]項之黏著帶，其中，前述焊料潤濕展開率為60%以上時，含有脂肪族二羧酸作為(C)具有助融劑活性的硬化劑。
[10]如[8]項之黏著帶，其中，前述焊料潤濕展開率為40至60%時，含有具羧基與酚性羥基之化合物作為(C)具有助融劑活性的硬化劑。
[11]一種黏著帶，其係如[1]至[10]項中任一項的黏著帶，且厚度100 μm之該黏著帶之223℃時的熔融黏度為10Pa．s至200000Pa．s。
[12]如[1]至[7]項中任一項的黏著帶，其相對於焊料粉以外之構成成分的合計100重量份，係進一步含有焊料粉30至200重量份。
[13]一種黏著帶，其係如[12]項的黏著帶，且厚度100 μm之該黏著帶之138℃時的熔融黏度為1Pa．s至10000Pa．s。
[14]一種晶片堆疊型之半導體裝置，係使用如[1]至[13]項中任一項的黏著帶而電性連接半導體晶片與半導體晶片而構成。
本發明之黏著帶係在晶片堆疊型之半導體裝置中，可以一次進行半導體晶片間之電性連接與密封。尤其本發明之黏著帶係藉由使用具有助融劑活性之硬化劑以除去焊料凸塊或焊料粉等焊料成分的氧化膜，而可提昇焊料成分之潤濕性，可確保半導體晶片間之電性連接信賴性。又，具有該助融劑活性之硬化劑係於黏著帶硬化時發揮作為硬化劑功能，故不須助融劑洗淨，又，不以助融劑成分游離於樹脂成分中之狀態存在，故亦具有耐離子遷移性良好之優點。
根據本發明之較佳態樣，使黏著帶之熔融黏度調整於預定的範圍，俾可抑制黏著帶之熔融時所產生之樹脂成分的滲出至最小限度。藉由使用如此之本發明的黏著帶連接半導體晶片與半導體晶片，俾可縮小半導體晶片間之間隔距離，且可縮小與上段之半導體晶片側面與下段之半導體晶片上所設有之外部電極的最短間隔距離。藉此，可縮減封裝化作為半導體裝置之零件全體的總厚，可使被封裝化之零件全體輕量化。再者，藉由使用本發明之黏著帶，可提高能搭載於一個封裝內之半導體晶片的積體密度，又，可使被封裝化之零件全體小型化。又，可縮小半導體晶片表面所設有之內部電極間之最短間隔距離，故可增大能收容於一個封裝內之資訊量。
本發明之半導體裝置係可提高能搭載於一個封裝內之半導體晶片的積體密度，故可對應於電子機器的高功能化及小型化之要求。
以下，說明有關本發明之黏著帶及半導體裝置。
1.黏著帶
本發明之黏著帶係於晶片堆疊型之半導體裝置中，用以電性連接半導體晶片與半導體晶片之黏著帶，其特徵在於含有：(A)薄膜形成性樹脂10至50重量%；(B)硬化性樹脂30至80重量%；(C)具有助融劑活性之硬化劑1至20重量%。
本發明之黏著帶係於具備第1半導體晶片與第2半導體晶片、且前述第1半導體晶片之電路面與前述第2半導體晶片之電路面係相對向配設而構成之晶片堆疊型之半導體裝置中，用以電性連接前述第1半導體晶片與前述第2半導體晶片。又，在前述半導體電子零件中，在與前述第2半導體晶片之電路面相反側之面進一步積層第3半導體晶片而成的多段堆疊型電子零件中，係用以透過於第2半導體晶片之厚度方向所設的貫通孔而電性連接前述第2半導體晶片與前述第3半導體晶片。
本發明之黏著帶係藉由以預定之調配比含有薄膜形成性樹脂、硬化性樹脂及具有助融劑活性之硬化劑，俾於晶片堆疊型之半導體裝置中，具有可以一次進行半導體晶片間的電性連接與密封之優點。尤其本發明之黏著帶係藉由使用具有助融劑活性之硬化劑，而除去焊料凸塊或焊料粉等焊料成分的氧化膜，可提昇焊料成分之潤濕性，並可使半導體晶片間之電性連接信賴性良好者。又，具有該助融劑活性之硬化劑係於黏著帶之硬化時作為硬化劑發揮功能，而被攝入於樹脂中，故具有：不須助融劑洗淨，成為離子遷移產生因素之助融劑殘渣亦不會以游離於樹脂中之狀態殘留的優點。
本發明之黏著帶係依據欲使用本發明之黏著帶而黏著之半導體晶片間的連接方式，而分開成如下之二個實施態樣。第1實施態樣之黏著帶係有關於使前述第1半導體晶片與前述第2半導體晶片以覆晶方式電性連接之情形中所適宜使用之黏著帶者。另外，第2實施態樣之黏著帶係有關於使調配於用以黏著前述第1半導體晶片與前述第2半導體晶片之黏著帶上之焊料粉熔融而使其自我整合地凝集，俾將半導體晶片間予以電性連接之情形中所適宜使用之黏著帶者。以下，進行說明各別之實施態樣。
a.第1實施態樣
首先，具體地說明有關本發明之第1實施態樣的黏著帶。
本發明之第1實施態樣的黏著帶係藉由以預定之調配比含有(A)薄膜形成性樹脂、(B)硬化性樹脂及(C)具有助融劑活性之硬化劑者。本發明之第1實施態樣之黏著帶，在使半導體晶片與半導體晶片以面朝下搭載之晶片堆疊型之半導體裝置中，以覆晶方式進行半導體晶片間之電性連接之情形尤宜使用。藉由使本實施態樣之黏著帶介置於相對向之半導體晶片間並使其熱熔融，而除去焊料成分之氧化膜(該焊料成分係構成於至少一者之半導體晶片的相對向面側所形成之焊料凸塊者)，提昇焊料成分之潤濕性，而促進焊料成分在相對向之內部電極間凝集而形成焊料區域的情形，且，促進於半導體晶片間之間隙填充樹脂成分而形成絕緣性區域的情形，藉由使樹脂成分硬化所形成之焊料區域及絕緣性區域進行固定化，可一次進行半導體晶片間之電性連接及密封之黏著帶。
以下，說明有關本實施態樣之黏著帶的構成成分。
(A)薄膜形成性樹脂本發明所使用之薄膜形成性樹脂係只要為可溶於有機溶劑，且具有單獨製膜性者即無特別限定。薄膜形成性樹脂係可使用熱塑性樹脂或熱硬化性樹脂之任一者，亦可併用此等。
薄膜形成性樹脂係可舉例如(甲基)丙烯酸系樹脂、苯氧樹脂、聚酯樹脂、聚胺基甲酸酯樹脂、聚醯亞胺樹脂、矽氧烷改性聚醯亞胺樹脂、聚丁二烯、聚丙烯、苯乙烯－丁二烯－苯乙烯共聚物、苯乙烯－乙烯－丁烯－苯乙烯共聚物、聚縮醛樹脂、聚乙烯丁醛樹脂、聚乙烯乙醛樹脂、丁基橡膠、氯丁二烯(chloroprene)橡膠、聚醯胺樹脂、丙烯腈－丁二烯共聚物、丙烯腈－丁二烯－丙烯酸共聚物、丙烯腈－丁二烯－苯乙烯共聚物、聚醋酸乙烯酯、耐龍等。此等係可使用一種，亦可併用2種以上。其中宜為選自由(甲基)丙烯酸系樹脂、苯氧樹脂及聚醯亞胺樹脂所構成之群組的至少一種。
在本說明書中，所謂(甲基)丙烯酸系樹脂係意指(甲基)丙烯酸及其衍生物的聚合物、或(甲基)丙烯酸及其衍生物與其他之單體的共聚物。此處，標記為(甲基)丙烯酸等之時係意指丙烯酸或甲基丙烯酸。
(甲基)丙烯酸系樹脂之具體例可舉例如聚丙烯酸、聚甲基丙烯酸、聚丙烯酸甲酯、聚丙烯酸乙酯、聚丙烯酸丁酯、聚丙烯酸－2－乙基己酯等聚丙烯酸酯，聚甲基丙烯酸甲酯、聚甲基丙烯酸乙酯、聚甲基丙烯酸丁酯等聚甲基丙烯酸酯、聚丙烯腈、聚甲基丙烯腈、聚丙烯醯胺、丙烯酸丁酯－丙烯酸乙酯－丙烯腈共聚物、丙烯腈－丁二烯共聚物、丙烯腈－丁二烯－丙烯酸共聚物、丙烯腈－丁二烯－苯乙烯共聚物、丙烯腈－苯乙烯共聚物、甲基丙烯酸甲酯－苯乙烯共聚物、甲基丙烯酸甲酯－丙烯腈共聚物、甲基丙烯酸甲酯－α－甲基苯乙烯共聚物、丙烯酸丁酯－丙烯酸乙酯－丙烯腈－2－羥乙基甲基丙烯酸酯－甲基丙烯酸共聚物、丙烯酸丁酯－丙烯酸乙酯－丙烯腈－2－羥乙基甲基丙烯酸酯－丙烯酸共聚物、丙烯酸丁酯－丙烯腈－2－羥乙基甲基丙烯酸酯共聚物、丙烯酸丁酯－丙烯腈－丙烯酸共聚物、丙烯酸丁酯－丙烯酸乙酯－丙烯腈共聚物、丙烯酸乙酯－丙烯腈－N,N－二甲基丙烯醯胺共聚物等。其中，宜為丙烯酸丁酯－丙烯酸乙酯－丙烯腈共聚物、丙烯酸乙酯－丙烯腈－N,N－二甲基丙烯醯胺。
又，藉由使用具有腈基、環氧基、羥基、羧基等官能基的單體共聚合而成之(甲基)丙烯酸系樹脂，可提昇於與被黏體之密著性及與其他樹脂成分的相溶性。在如此之(甲基)丙烯酸系樹脂中，具有前述官能基之單體的使用量無特別限定，但相對於(甲基)丙烯酸系樹脂之全重量，宜為0.1至50mol%，更宜為0.5至45莫耳%，最宜為1至40莫耳%。若調配量未達前述下限值，有時提昇密著性之效果會降低，若超過前述上限值，黏著力太強，有時提昇作業性之效果會降低。
前述(甲基)丙烯酸系樹脂之重量平均分子量無特別限定，但宜為10萬以上，更宜為15萬至100萬，最宜為25萬至90萬。若重量平均分子量為前述範圍，可提昇製膜性。
使用苯氧樹脂作為薄膜形成性樹脂時，其數目平均分子量宜為5000至15000，更宜為6000至14000，最宜為8000至12000。藉由使用如此之苯氧樹脂，可抑制硬化前之黏著帶的流動性，且可使黏著帶之層間厚度均一化。苯氧樹脂之骨架可舉例如雙酚A型、雙酚F型、聯苯骨架型等，不限定於此等。此等之中，飽和吸水率為1%以下之苯氧樹脂係在黏著時或焊料封裝時之高溫下，可抑制發泡或剝離等之產生，故佳。又，飽和吸水率係使苯氧樹脂加工成25 μm厚之薄膜，在100℃環境中乾燥1小時(絕對乾燥狀態)，再者，將該薄膜放置於40℃ 90%RH環境之恆溫高濕層，每隔24小時測定重量變化，使用重量變化飽和的時點之重量，可依下述式算出。
飽和吸水率(%)＝{(飽和之時點的重量)－(絕對乾燥時點的重量)}/(絕對乾燥時點的重量)×100
使用於本發明之聚醯亞胺樹脂係只要於重複單元中具有醯亞胺鍵之樹脂即無特別限定。可舉例如使二胺與酸二酐反應，加熱所得到之聚醯胺酸，進行脫水閉環所得到者。二胺可舉例如芳香族二胺之3,3’－二甲基－4,4’－二胺基二苯基、4,6－二甲基－間苯二胺、2,5－二甲基－對苯二胺，矽氧烷二胺之1,3－雙(3－胺基丙基)－1,1,3,3－四甲基二矽氧烷等，可單獨亦可混合2種以上使用。又，酸二酐可舉例如3,3,4,4’－聯苯四甲酸、均苯四酸二酐、4,4’－氧二酞酸二酐等，可單獨亦可混合2種以上使用。聚醯亞胺樹脂係可使用可溶於溶劑者，亦可使用不溶者，但溶劑可溶性者與其他之成分混合時的清漆(varnish)化很容易，處理性優。尤其，矽氧烷改性聚醯亞胺樹脂係可溶解於各種有機溶劑，故適宜使用。
薄膜形成性樹脂係亦可使用市售品，在無損本發明之效果的範圍，亦可為調配有各種可塑劑、安定劑、無機填充劑、抗靜電劑或顏料等添加劑者。
在本發明之第1實施態樣的黏著帶中，薄膜形成性樹脂之調配量係相對於黏著帶之構成成分的合計量，為10至50重量%，宜為15至40重量%，更宜為20至35重量%。若為此範圍，可抑制黏著帶熔融前之樹脂成分的流動性，黏著帶之處理變容易。
(B)硬化性樹脂本發明所使用之硬化性樹脂，一般係只要可使用作為半導體用的黏著成分即無特別限定。例如硬化性樹脂可舉例如環氧樹脂、氧雜環丁烷(oxetane)樹脂、酚樹脂、(甲基)丙烯酸酯樹脂、不飽和聚酯樹脂、二烯丙基酞酸酯樹脂、馬來醯亞胺(maleimide)樹脂等。其中，適宜使用硬化性與保存性、硬化物之耐熱性、耐濕性、耐藥品性優之環氧樹脂。
環氧樹脂係亦可使用在室溫下固形之環氧樹脂、與在室溫下液狀之環氧樹脂的任一者。亦可併用樹脂在室溫下為固形之環氧樹脂、與在室溫下液狀之環氧樹脂。藉此，可更提昇樹脂之熔融行為的設計自由度。
在室溫下固形之環氧樹脂係無特別限定，但可舉例如雙酚A型環氧樹脂、雙酚S型環氧樹脂、酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、縮水甘油基胺型環氧樹脂、縮水甘油基酯型環氧樹脂、3官能環氧樹脂、4官能環氧樹脂等。更具體地係適宜使用固形3官能環氧樹脂、甲酚酚醛清漆型環氧樹脂等。此等係可單獨使用，亦可併用2種以上。
在室溫下固形之環氧樹脂之軟化點宜為40至120℃，更宜為50至110℃，最宜為60至100℃。若為此範圍，可抑制黏著帶之沾黏性，黏著帶之處理性變容易。
在室溫下液狀之環氧樹脂係無特別限定，但可舉例如雙酚A型環氧樹脂、雙酚F型環氧樹脂等。亦可併用雙酚A型環氧樹脂與雙酚F型環氧樹脂。
在室溫下液狀之環氧樹脂的環氧基當量宜為150至300，更宜為160至250，最宜為170至220。若環氧基當量低於此範圍，有硬化物之收縮率變大之傾向，有時於使用本發明之黏著帶而黏著之半導體晶片產生翹曲。又，若環氧基當量高於此範圍，有時與薄膜形成性樹脂尤其聚醯亞胺樹脂之反應性會降低。
環氧樹脂等硬化性樹脂係亦可使用市售品，在無損本發明之效果的範圍，亦可為調配有各種可塑劑、安定劑、無機填充劑、抗靜電劑或顏料等添加劑者。
本實施形態之黏著帶中，硬化性樹脂之調配量係相對於黏著帶之構成成分的合計量，為30至80重量%，宜為35至75重量%，更宜為40至70重量%。若為此範圍，可確保半導體晶片間之電性連接強度及機械黏著強度。
(C)具有助融劑活性之硬化劑在本說明書中，具有助融劑活性之硬化劑係意指顯示可使設於半導體晶片之焊料凸塊表面的氧化膜進行還原成可與導體構件電性接合之程度的作用，且具有與樹脂結合之官能基的化合物。具有助融劑活性之硬化劑係在黏著帶熔融時使焊料凸塊表面的氧化膜進行還原，而提高構成焊料凸塊之焊料成分的潤濕性，促進半導體晶片於相對向之內部電極間的焊料成分之凝集，以容易形成焊料區域。另外，形成半導體晶片間之電性連接後係發揮硬化劑作用，加成於樹脂上而可提高樹脂之彈性率或Tg。本發明之黏著帶係使用具有如上述助融劑活性的硬化劑，故不須進行助融劑洗淨，有可抑制起因於助融劑成分殘渣之離子遷移的發生之優點。
具有本發明所使用之助融劑活性的硬化劑，宜至少具有1個羧基。另外，與本發明所使用之具有助融劑活性的硬化劑之樹脂進行結合的官能基，係可依所使用之(B)硬化性樹脂的種類等而適當選擇。例如，含有環氧樹脂作為(B)硬化性樹脂時，具有助融劑活性之硬化劑係宜具有羧基、與環氧基反應之基。與環氧基反應之基係可舉例如羧基、羥基、胺基。
具體上，本發明所使用之具有助融劑活性的硬化劑係宜選擇自由脂肪族二羧酸及羧基與酚性羥基之化合物所構成之群組的至少一種。
本發明所使用之脂肪族二羧酸係只要為於脂肪族烴結合2個羧基之化合物即無特別限定。脂肪族烴基係可為飽和或不飽和之非環式，亦可為飽和或不飽和之環式。脂肪族烴基為非環式之時，可為直鏈狀，亦可為分枝狀。
上述脂肪族二羧酸可舉例如以下述式(1)所示之化合物。
HOOC－(CH2 )n －COOH (1)
式中，n為1至20之整數，宜為3至10之整數。若為此範圍，助融劑活性、黏著時之釋氣(outgas)及黏著帶之硬化後的彈性率及玻璃轉移溫度之均衡乃良好。尤其，因使n為3以上，可抑制黏著帶硬化後的彈性率增加，可提昇與被黏著物之黏著性。又，因使n為10以下，可抑制彈性率之降低，可更提昇連接信賴性。
以上述式(1)所示之化合物的具體例，可舉例如戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、十一碳二酸、十二碳二酸、十三碳二酸、十四碳二酸、十五碳二酸、十八碳二酸、十九碳二酸、二十碳二酸等。其中，尤宜為己二酸、辛二酸、癸二酸、十二碳二酸，尤宜為癸二酸。
具有羧基與酚性羥基之化合物可舉例如水楊酸、2,3－二羥基安息香酸、2,4－二羥基安息香酸、龍膽酸(2,5－二羥基安息香酸)、2,6－二羥基安息香酸、3,4－二羥基安息香酸、沒食子酸(3,4,5－三羥基安息香酸)等安息香酸衍生物；1,4－二羥基－2－萘酸、3,5－二羥基－2－萘酸等萘酸衍生物；酚酞啉；二酚酸等。其中宜為酚酞啉、龍膽酸、2,4－二羥基安息香酸、2,6－二羥基安息香酸，尤宜為酚酞啉、龍膽酸、或此等之組合。
又，此等化合物係任一者均易吸濕，成為空穴的原因，故使用時係宜先乾燥。
在本發明中，具有助融劑活性之硬化劑係可使用一種，亦可併用2種以上。在本實施形態之黏著帶中，具有助融劑活性之硬化劑的調配量相對於黏著帶之構成成分的合計量係為1至20重量%，更宜為3至18重量%，最宜為5至15重量%。若為此範圍，可使焊料凸塊表面之氧化膜還原至可電性接合之程度，且，樹脂成分之硬化時係有效率地加成於樹脂中，可提昇樹脂之彈性率或Tg。又，可抑制起因於具有未反應之助融劑活性的硬化劑之離子遷移的發生。
(D)其他成分本實施形態之黏著帶係亦可於無損本發明之效果的範圍含有上述以外之成分。
例如，本實施形態之黏著帶係亦可進一步含有上述(C)成分以外之硬化劑。硬化劑係可舉例如酚類、胺類、硫醇類等。此等係只要依據所使用之(B)硬化性樹脂的種類等而適當選擇即可。例如使用環氧樹脂作為硬化性樹脂時，就可得到與環氧樹脂之良好的反應性、硬化時之低尺寸變化及硬化後的適當物性(例如耐熱性、耐濕性等)而言，係適宜使用酚類做為硬化劑。
本發明所使用之酚類係無特別限定，但因黏著帶之硬化後的物性優，故宜為2官能以上，可舉例如雙酚A、四甲基雙酚A、二烯丙基雙酚A、雙酚、雙酚F、二烯丙基雙酚F、參酚、肆酚、酚酚醛清漆類、甲酚酚醛清漆類等。其中，因熔融黏度及與環氧樹脂之反應性良好，硬化後之物性優，故適宜使用酚酚醛清漆類及甲酚酚醛清漆類。
硬化劑之調配量係只要依使用之硬化性樹脂或硬化劑之種類、或具有助融劑活性之硬化劑的種類或使用量而適當選擇即可。例如使用酚酚醛清漆類作為硬化劑之情形，關於其調配量，就使硬化性樹脂確實地硬化之點而言，相對於黏著帶之構成成分之合計量，較佳係5重量%以上，更宜為10重量%以上。若殘留環氧樹脂與未反應之酚酚醛清漆類，則會成為離子遷移之原因。因此，為免形成殘渣而殘留，宜為30重量%以下，更宜為25重量%以下。
酚酚醛清漆樹脂之調配量係亦可用相對於環氧樹脂之當量比進行規定。例如相對於環氧樹脂之酚酚醛清漆樹脂的當量比係0.5至1.2，宜為0.6至1.1，更宜為0.7至0.98。因使相對於環氧樹脂之酚酚醛清漆樹脂的當量比為0.5以上，可確保硬化後之耐熱性、耐濕性。另外，因使此當量比為1.2以下，可降低硬化後之環氧樹脂與未反應之殘留酚酚醛清漆樹脂的量，耐離子遷移性變良好。
此等硬化劑係可使用一種，亦可併用2種以上。
又，本實施形態之黏著帶係亦可進一步含有硬化促進劑。硬化促進劑係可依硬化性樹脂之種類等而適當選擇。硬化促進劑例如可使用融點為150℃以上之咪唑化合物。若所使用之硬化促進劑的融點為150℃以上，黏著帶之硬化終止前，構成焊料凸塊之焊料成分可移動至半導體晶片所設有的內部電極表面，可使內部電極間之電性連接形成良好者。融點為150℃以上之咪唑化合物可舉例如2－苯基羥基咪唑、2－苯基－4－甲基羥基咪唑等。
硬化促進劑之調配量係只要適當選擇即可，但例如使用咪唑化合物作為硬化促進劑時，相對於黏著帶之構成成分的合計量，宜為0.005至10重量%，更宜為0.01至5重量%。因使咪唑化合物之調配量為0.005重量%以上，而可更有效率地發揮作為硬化促進劑之功能，故可提昇黏著帶之硬化性。又，因使咪唑之調配量為10重量%以下，而構成焊料凸塊之焊料成分之熔融溫度中的樹脂之熔融黏度不太高，故可得到良好的焊料接合構造。又，可進一步提昇黏著帶之保存性。
此等硬化促進劑係可使用一種，亦可併用2種以上。
又本實施態樣之黏著帶係可進一步含有矽烷偶合劑。因含有矽烷偶合劑，可提昇黏著帶對於半導體晶片之黏著性。矽烷偶合劑係可使用例如環氧基矽烷偶合劑、含有芳香族之胺基矽烷偶合劑等。此等係可使用一種，亦可併用2種以上。矽烷偶合劑之調配量係只要適當選擇即可，但相對於黏著帶之構成成分的合計量係宜0.01至10重量%，宜為0.05至5重量%，更宜為0.1至2重量%。
上述成分之外，本實施形態之黏著帶係為了提昇樹脂之相溶性、安定性、作業性等各種特性，亦可適當調配各種添加劑。
其次，說明有關第1實施形態之黏著帶的製造方法。
第1實施形態之黏著帶係可藉由使(A)薄膜形成性樹脂、(B)硬化性樹脂、(C)具有助融劑活性之硬化劑、及依需要之其他之成分混合於溶劑中，使所得到之清漆塗佈於實施聚酯片等之剝離處理的基材上，於預定的溫度乾燥至實質上不含有溶劑之程度而得到。此處所使用之溶劑係只要對所使用之成分為無活性者即無特別限定，但適宜使用丙酮、甲乙酮、甲基異丁基酮、DIBK(二異丁基酮)、環己酮、DAA(二丙酮醇)等酮類，苯、二甲苯、甲苯等芳香族烴類，甲醇、乙醇、異丙酮、正丁醇等醇類，甲基溶纖劑(methylcellosolve)、乙基溶纖劑、丁基溶纖劑、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯等溶纖劑系，NMP(N－甲基－2－吡咯啶酮)、THF(四氫呋喃)、DMF(二甲基甲醯胺)、DBE(二元酸酯)、EEP(3－乙氧基丙酸乙酯)、DMC(二甲基碳酸酯)等。溶劑之使用量係宜為混合於溶劑之成分的固形分成為10至60重量%的範圍。
在本實施形態中，黏著帶之厚度並無特別限定，但較佳係5至300 μm，更宜為10至200 μm，最宜為15至150 μm。若為此範圍，可於半導體晶片之間隙充分地填充樹脂成分，可確保樹脂成分之硬化後的機械黏著強度。
又，在本實施形態中，宜具有所希望之焊料潤濕展開率(%)。亦即，本實施形態之黏著帶係宜於黏著帶上配置直徑500 μm之含錫的焊料球，以高於該焊料球之融點30℃的溫度加熱20秒時，以式(I)所示之焊料潤濕展開率為40%以上。
焊料潤濕展開率(%)＝[{(焊料球之直徑)－(潤濕展開後之焊料的厚度)}/(焊料球之直徑)]×100 (I)使用焊料凸塊而使電路基板進行金屬接合時，焊料之潤濕展開率愈大，愈助長金屬間結合，接合強度增加。為了防止接合不良的發生，充分的焊料潤濕展開率為40%以上，但若欲提高接合機率而考慮在接合後之各種環境下之接合信賴性，焊料潤濕展開率宜為45%以上，更宜為50%以上。
又，焊料潤濕展開率為60%以上時，具有前述(C)助融劑活性之硬化劑，宜含有脂肪族二羧酸。焊料潤濕展開率高達60%以上，必須強的還原力時，宜藉由使用助融劑活性更高之脂肪族二羧酸，提高焊料成分之潤濕性，確保電性連接信賴性。
另外，焊料潤濕展開率為40至60%時，具有(C)助融劑活性之硬化劑係宜含有具有羧基與酚性羥基之化合物。焊料潤濕展開率為上述之範圍，而無需前述之強還原力之情形，係因使用與硬化性樹脂(例如環氧樹脂)之反應性高的化合物，可更有效率地抑制起因於助融劑殘渣之離子遷移發生之故。
焊料潤濕展開率之測定條件係為了降低焊料球潤濕展開程度的變異，故以高於焊料球之融點30℃時的溫度進行加熱，又，加熱時間係考慮具有助融劑活性之硬化劑會熔融，移動至焊料球表面而焊料至潤濕展開的時間、及焊料潤濕展開程度的變異，而設為20秒。
焊料潤濕展開率係具體地依下述之測定方法來求取。(1)於裸Cu板(平井精密工業(股)製)貼黏厚15 μm之黏著帶。
(2)於黏著帶上靜置下述直徑為500 μm之焊料球。
(i)「M31」(Sn/Ag/Cu、融點217℃、千住金屬工業(股)製)(ii)「L20」(Sn/Bi、融點138℃、千住金屬工業(股)製)
(3)依據ASTM B 545，將加熱板加熱至比各焊料之融點高30℃的溫度，使上述試樣於加熱板上加熱20秒鐘。
(4)量測於裸Cu板上潤濕展開後之焊料球之高度。
(5)依下述之式(I)，算出焊料潤濕展開率。
焊料潤濕展開率(%)＝[{(焊料球的直徑)－(潤濕展開後之焊料的厚度)}/(焊料球的直徑)]×100 (I)
又，在本實施形態中，厚度100 μm之情形，在223℃時之黏著帶的熔融黏度宜為10至200000Pa．s，更宜為10至10000 Pa．s。因使該熔融黏度為10 Pa．s以上，可抑制加熱時黏著帶從被黏物之半導體晶片滲出所產生的連接信賴性之降低、及於周邊構件之污染。又，亦可防止氣泡的產生、於半導體晶片之間隙樹脂成分未充分填充等不良。再者，亦可防止焊料太過潤濕展開且於鄰接電極間短路之問題。又，因使熔融黏度為200000 Pa．s以下，焊料凸塊與半導體晶片所設有之內部電極進行金屬接合時，可排除焊料凸塊與該內部電極間之樹脂，故可抑制接合不良。熔融黏度更宜為50至5000 Pa．s，尤宜為300至1500 Pa．s。
黏著帶之熔融黏度係可依以下之測定方法求出。亦即，使厚度100 μm之黏著帶以黏彈性測定裝置(JASCO International(股)製)且昇溫速度30℃/分、頻率1.0Hz，以應變固定－應力檢測進行測定，以屬於Sn/Ag＝96.5/3.5之融點的環境溫度223℃時之黏度作為測定值。
本發明之第1實施態樣的黏著帶係藉由如下述使用，可電性連接半導體晶片與半導體晶片。以下，一邊參照圖式一邊進行說明。第1圖係有關本發明之第1實施態樣的黏著帶之使用方法的步驟說明圖。
如第1圖(a)所示，首先，準備於電路面設有內部電極11之半導體晶片10、於電路面設有內部電極21之半導體晶片20。為了使電性連接良好，於內部電極11及內部電極21的表面亦可預先實施洗淨、研磨、電鍍及表面活性化等處理。例如，如第1圖(a)所示，亦可於內部電極11及內部電極21之表面，使用Ti、Ti/Cu、Cu、Ni、Cr/Ni等而形成UBM(Under Barrier Metal)層103、104。UBM層可為1層、亦可為複數層。又，於半導體晶片10及20表面亦可就保謢半導體元件之目的，預先實施表面安定化處理，例如亦可形成SiN膜等鈍化膜113。又，雖無圖示，但就做為使焊料凸塊與UBM層之接合部及內部電極殘留之應力緩和之層而言，亦可形成聚醯亞胺膜、聚苯并唑(polybenzoxazole)膜、苯并環丁烯膜等有機樹脂保護膜。
其次，如第1圖(b)所示，於內部電極11及21上之至少一者形成焊料凸塊105。焊料凸塊105係可依電鍍法形成，亦可依搭載焊料糊膏印刷法、焊料球之方法形成。又在第1圖(a)中焊料凸塊105係形成於內部電極21上，但可只形成於內部電極11上，亦可形成於內部電極11上及內部電極21上之兩者。焊料凸塊105亦可於形成後實施回流處理。
構成焊料凸塊105之焊料成分係宜為含有選自由錫(Sn)、銀(Ag)、鉍(Bi)、銦(In)、鋅(Zn)及銅(Cu)所構成之群組的至少2種以上之合金。其中，若考慮熔融溫度及機械物性，宜為Sn－Bi之合金、Sn－Ag－Cu之合金、Sn－In之合金等含有Sn的合金。關於焊料凸塊之融點，就充分確保黏著帶中之樹脂成分的流動性而言，一般為100℃以上，較佳係130℃以上。又，關於焊料凸塊之熔融溫度，為了防止黏著時安裝基板或半導體晶片上所設有之元件的熱劣化，一般為250℃以下，宜為230℃以下。又，關於焊料凸塊之融點，係例如使用DSC，以昇溫速度10℃/分測定構成焊料凸塊之焊料粉單體時之吸熱譜峰溫度。
關於焊料凸塊105之大小，為了充分確保電性連接信賴性，宜為直徑5 μm至500 μm，更宜為10 μm至300 μm，最宜為20 μm至200 μm。
然後，如第1圖(c)所示，於半導體晶片10與半導體晶片20之間介置黏著帶106，並徐緩地加熱至該黏著帶106之硬化未結束、且焊料凸塊105會熔融之溫度。藉加熱，構成焊料凸塊105之焊料成分會熔融，所熔融之焊料成分係凝集於內部電極表面。繼而，內部電極表面與焊接成分接合，形成焊料區域100而使相對向之內部電極間電性連接。
又，在加熱溫度到達焊料凸塊之融點的時點，加壓半導體晶片10與半導體晶片20而使相對向之內部電極間之距離接近。
如此做法，藉加熱熔融之焊料成分凝集於相對向之內部電極間，而進行固著，而形成如第1圖(c)所示之焊料區域100，藉其而電性連接相對向之內部電極間。另外，於黏著帶106所含有之樹脂成分係填充於半導體晶片10與半導體晶片20之間隙而形成絕緣性區域101，藉絕緣性區域101而使鄰接之內部電極間電性絕緣。
繼而，使黏著帶106之樹脂成分完全硬化，確保電絕緣性及機械黏著強度。本實施態樣中係如此做法而使相對向之內部電極間電性連接，並可用絕緣性樹脂密封半導體晶片10與半導體晶片20之間隙。
在使用本實施態樣之黏著帶而介由半導體晶片之厚度方向所形成之貫通孔而進行半導體晶片間之電性連接與密封之情形中，亦可以與上述同樣做法而實施。本實施態樣之黏著帶係可以一次進行半導體晶片間之電性連接及密封。
b.第2實施形態
其次，說明有關本發明之第2實施態樣之黏著帶。
本發明之第2實施態樣之黏著帶係以一定之調配比含有(A)薄膜形成性樹脂、(B)硬化性樹脂、(C)具有助融劑活性之硬化劑、尚且進一步(E)焊料粉。本發明之第2實施態樣之黏著帶係以面朝下搭載半導體晶片與半導體晶片之晶片堆疊型之半導體裝置中，當利用黏著帶所含有之焊料粉的自對準而進行半導體晶片間之電性連接之情形特別適宜使用。使本實施態樣之黏著帶介置於相對向之半導體晶片間並使其熱熔融，藉此促進於該黏著帶所含有之焊料粉在相對向之內部電極間進行凝集而形成焊料區域，且，促進於半導體晶片間之間隙填充樹脂成分而形成絕緣性區域，藉由使樹脂成分硬化所形成之焊料區域及絕緣性區域進行固定化，俾可一次進行半導體晶片間之電性連接及密封。本實施態樣之黏著帶係不須於半導體晶片形成焊料凸塊，可用更簡單的方法進行半導體晶片間之電性連接而有用。
第2實施態樣之黏著帶的構成成分係除了焊料粉，而與第1實施態樣的黏著帶之構成成分相同，含有(A)薄膜形成性樹脂、(B)硬化性樹脂、(C)具有助融劑活性之硬化劑、及依需要之(D)其他之成分。各成分之具體例及調配量係按照在第1實施態樣中所說明，故此處不重複說明。又，在第2實施態樣中，各成分之調配量係除了焊料粉外，尚相對於黏著帶之構成成分之合計量而規定。
在本實施態樣中，構成(E)焊料粉之焊料成分可舉例如無鉛焊料。無鉛焊料並無特別限定，但宜選擇自由Sn、Ag、Bi、In、Zn及Cu所構成之群組的至少2種以上之合金。其中，若考慮熔融溫度及機械物性，宜為Sn－Bi之合金、Sn－Ag－Cu之合金、Sn－In之合金、Sn－Ag之合金等含Sn的合金。
焊料粉之平均粒徑係只要依半導體晶片之表面積及所希望之半導體晶片的間隔距離而適當選擇即可，但宜為1至100 μm左右，更宜為5至100 μm，最宜為10至50 μm。若為此範圍，可於內部電極表面確實地集中焊料成分。又，可抑制將鄰接之內部電極間的橋接，並可防止鄰接之內部電極間的短路。焊料粉之平均粒徑係例如依雷射繞射散射法測定。
又，關於焊料粉之融點，就充分確保使黏著帶熔融時之樹脂的成分之流動性而言，一般為100℃以上，宜為130℃以上。又，關於焊料粉之融點，為了防止黏著時於安裝基板或半導體晶片上所設有之元件的熱劣化，一般為250℃以下，宜為230℃以下。
關於焊料粉之調配量，相對於焊料粉以外的黏著帶之構成成分的合計100重量份，宜為30至200重量份，更宜為40至180重量份，最宜為50至160重量份。
本實施態樣之黏著帶係以與於第1實施態樣中所敘述之方法同樣做法而製造。亦即，將成分(A)至(C)，依需要之其他的成分(D)及(E)焊料粉混合於溶劑中，將所得到之清漆塗佈於已實施聚酯片等剝離處理之基材上，以預定之溫度乾燥至實質上不含溶劑之程度得到。溶劑係可使用與在第1實施態樣中所例示者相同。
第2實施態樣之黏著帶的厚度並無特別限定，但較佳係5至300 μm，更宜為10至200 μm，最宜為15至150 μm。若為此範圍，可於半導體晶片之間隙充分地填充樹脂成分，可確保樹脂成分之硬化後的機械黏著強度。
在本實施形態中，厚度100 μm之情形，在138℃時之黏著帶的熔融黏度宜為1至10000Pa．s，更宜為10至10000Pa．s。藉由形成於此範圍，可抑制焊料成分從內部電極擴散，同時並可抑制樹脂成分之滲出。又，關於黏著帶之熔融黏度，係可將厚度100 μm之黏著帶以黏彈性測定裝置(JASCO International(股)製)且昇溫速度10℃/分、頻率0.1Hz，以應變固定－應力檢測進行測定，以屬於Sn/Bi＝42/58之融點的環境溫度138℃中之黏度作為測定值。
藉由使熔融黏度為1Pa．s以上，焊料粉不會從被黏物之半導體晶片滲出，可抑制絕緣不良。又，可抑制加熱時黏著帶從被黏物之半導體晶片滲出所產生的連接信賴性之降低、及於周邊構件之污染。又，亦可防止氣泡的產生、於半導體晶片之間隙樹脂成分未充分填充等不良。又，因使熔融黏度為10000 Pa．s以下，焊料粉與具有助融劑活性之硬化劑的接觸機率會提高，有效率地進行氧化膜之還原。又因焊料粉易移動，焊料粉殘存於被黏物之半導體晶片的電極間之機率降低，可抑制絕緣不良之發生。又焊料凸塊與半導體晶片所設有之內部電極進行金屬接合時，可排除焊料凸塊與該內部電極間之樹脂，故可抑制接合不良。熔融黏度更宜為50至5000 Pa．s，尤宜為100至4000 Pa．s，最宜為100至2000 Pa．s。
本發明之第2實施態樣的黏著帶係藉由如下述使用，可電性連接半導體晶片與半導體晶片。第2圖係有關本發明之第2實施態樣的黏著帶之使用方法的步驟說明圖。
首先，如第2圖(a)所示，使設有內部電極11之半導體晶片10、與設有內部電極21之半導體晶片20以設有內部電極之面(電路面)互相對向之方式配置。
於半導體晶片10及半導體晶片20之表面亦可以使內部電極11、21開口之方式形成保護膜107。例如亦可形成聚醯亞胺膜、聚苯并唑膜、苯并環丁烯膜等有機樹脂保護膜。藉此，焊料成分容易被引導至相對向之內部電極間，可使內部電極間之電性連接良好。又，亦可發揮作為應力緩和層功能。又，保護膜107之形成係只要為具有如上述之功能者，不限定於圖示之形狀。又於內部電極11及內部電極21的表面亦可預先實施洗淨、研磨、電鍍及表面活性化等處理。例如，如第2圖(a)所示，亦可於內部電極11及內部電極21之表面，使用Ti、Ti/Cu、Cu、Ni、Cr/Ni等而形成UBM(Under Barrier Metal)層103。UBM層可為1層、亦可為複數層。又，於半導體晶片10及20表面亦可就保護半導體元件之目的而預先實施表面安定化處理，例如亦可形成SiN膜等鈍化膜113。
然後，如第2圖(b)所示，於半導體晶片10與半導體晶片20之間介置黏著帶108。於黏著帶108中係含有焊料粉108a。其次，徐緩地加熱至黏著帶108之硬化未結束、且黏著帶108中之焊料粉108a會熔融之溫度。藉加熱，如第2圖(c)所示，焊料粉108a會熔融，於樹脂成分中移動而自我整合地凝集於內部電極表面，形成焊料區域100。藉此焊料區域100，使熔融之焊料粉與內部電極表面進行接合而使相對向之內部電極間電性連接。另外，於半導體晶片間之間隙係填充黏著帶之樹脂成分，形成絕緣性區域101。藉此鄰接之內部電極間被電性絕緣。
又，在加熱溫度到達焊料粉之融點的時點，可加壓半導體晶片10與半導體晶片20而使相對向之內部電極間之距離接近。
繼而，使黏著帶108之樹脂成分完全硬化，確保電性連接強度及機械黏著強度。如此，使相對向之內部電極11與內部電極21電性連接，並可用絕緣性樹脂密封半導體晶片10與半導體晶片20之間隙。
在使用本實施態樣之黏著帶，透過於半導體晶片之厚度方向所形成之貫通孔而進行半導體晶片間之電性連接與密封之情形中，亦可以與上述同樣做法而實施。本實施態樣之黏著帶係如此做法而可以一次進行半導體晶片間之電性連接及密封。
2.半導體裝置
其次，說明有關本發明之半導體裝置。
本發明之半導體裝置係使用本發明之黏著帶電性連接半導體晶片與半導體晶片而構成之晶片堆疊型之半導體裝置。本發明之一實施態樣係含有下述之晶片堆疊型半導體電子零件的半導體裝置：具備第1半導體晶片與第2半導體晶片，且前述第1半導體晶片之電路面與前述第2半導體晶片之電路面係相對向配設而構成者；其中，並包含使用本發明之黏著帶使前述第1半導體晶片與前述第2半導體晶片黏著而構成之半導體裝置。又本發明之另一實施態樣係在前述半導體裝置中，在含有在與前述第2半導體晶片之電路面相反側之面進一步積層第3半導體晶片而成的多段堆疊型電子零件之半導體裝置中，包含使用本發明之黏著帶而透過前述第2半導體晶片之厚度方向所設的貫通孔而電性連接前述第2半導體晶片與前述第3半導體晶片而成的半導體裝置。在前述多段堆疊型電子零件中，亦可為只於前述第2半導體晶片與前述第3半導體晶片之黏著使用本發明之黏著帶者。本發明之半導體裝置係只要為使用本發明之黏著帶黏著半導體晶片與半導體晶片而構成者，即無特別限定。
如前述，根據本發明之較佳態樣，本發明之黏著帶係藉由控制熔融黏度，俾可使該黏著帶之熔融時所產生之樹脂成分等的滲出抑制至最小限度，故可減小半導體晶片間之間隔距離、或減小上段之半導體晶片的側面與下段之半導體晶片的電路面所設置的外部電極之間隔距離，並可提昇能搭載於一個封裝件內之半導體晶片的積體密度。又，可謀求封裝件全體之小型化及薄型化。再者，亦可將內部電極間之間隔距離設定很短，並可增大可收藏於一個封裝件內之資訊量。以下，一邊參照圖式，一邊具體地說明本發明之半導體裝置。
第3圖係本發明之一實施形態的半導體裝置之概略截面圖。如第3圖所示，設於半導體晶片10上之外部電極12與設於安裝基板109上之電極(未圖示)乃藉線路110電性連接，半導體電子零件1被安裝於安裝基板109上。半導體電子零件1、安裝基板109及線路110係以密封樹脂111密封。又，安裝基板109之背面係設有複數之凸塊電極112。
半導體電子零件1係使半導體晶片10與半導體晶片20相對向配設而構成，此處，半導體晶片10與半導體晶片20係使用本發明之黏著帶而黏著。第4圖(a)係本發明之一實施形態的半導體電子零件1之概略俯視圖，第4圖(b)係第4圖(a)之A－A’之概略截面圖。第4圖(b)中，半導體電子零件1係配設成使設有內部電極11之第1半導體晶片10的電路面(未圖示)相對向於設有內部電極21之第2半導體晶片20的電路面(未圖示)。如第4圖(b)所示，內部電極11係被圖案化成以對應於內部電極21之方式而於相對向之內部電極11與內部電極21之間形成焊料區域100。藉由此焊料區域100，將相對向之內部電極間予以電性連接。又，在半導體晶片10與半導體晶片20之間隙中填充絕緣性樹脂而形成絕緣性樹脂區域101，藉此絕緣性樹脂區域101而使鄰接之內部電極間電性絕緣。於半導體晶片10之電路面係設有用以使形成於半導體晶片10之電路面的未圖示之積體電路連接於由矽等所構成之安裝基板之外部電極12。
半導體晶片10與半導體晶片20之間隔距離，係無特別限定，但為了提高半導體晶片之積體密度，宜縮小間隔距離X。例如，使用第2實施態樣之黏著帶時，該間隔距離X宜為25 μm以下，更宜為5 μm以下，最宜為3 μm以下。此處，間隔距離X係謂半導體晶片10之電路面與半導體晶片20之電路面之間的距離。就確保半導體晶片間之連接強度而言，間隔距離X宜為0.5 μm至5 μm。另外，使用第1實施態樣之黏著帶時，連接後之焊料球的大小係與連接前約同程度。例如使用50 μm之焊料球時，間隔距離X為25至50 μm左右，宜為35至48 μm，更宜為40至45 μm。
又，於半導體晶片20之側面20a與半導體晶片10之電路面所設置的外部電極12之最短間隔距離Y係無特別限定，但宜為1mm以下，更宜為0.7mm以下，最宜為0.5mm以下。又，雖無特別限定，但為了確保線路黏合之空間，最短之間隔距離Y一般係為0.05mm以上。此處，「於半導體晶片20之側面20a與半導體晶片10上所設置的外部電極12之最短間隔距離Y」中使用所謂「最短」之用語係表示，於各半導體晶片20之側面20a與半導體晶片10上之電路面所設置的外部電極12之距離不為一定之情形中，最接近之距離的意思。
再者，複數地設於半導體晶片之電路面的鄰接之內部電極間的最短間隔距離Z係宜為100 μm以下，更宜為70 μm以下，最宜為50 μm以下。就確保電性連接信賴性而言，最短之間隔距離Z係宜為10至50 μm。此處，「複數地設於半導體晶片上之鄰接之內部電極間的最短間隔距離Z」中使用所謂「最短」之用語係表示，鄰接之內部電極間的間隔距離Z不為一定之情形中，最接近之距離的意思。
又雖無特別限定，但第1半導體晶片10係宜為尺寸大於第2半導體晶片20者，就提昇半導體晶片之積體密度而言，如第1圖(a)所示，半導體晶片20係宜配設於半導體晶片10之略中央區域。又，設於半導體晶片10上之外部電極12係宜設於半導體晶片10之周邊部。
焊料區域100係焊料成分熔融、固著而所形成之區域，藉此區域，相對向之內部電極間會導通。又，絕緣性區域101係絕緣性樹脂填充所形成之區域，藉此區域，鄰接之內部電極間被電性絕緣。
又，雖無特別限定，但半導體晶片10及20之厚度宜分別為10 μm至1000 μm，更宜為750 μm以下。內部電極、外部電極之尺寸或材質無特別限定，只要依用途而適當選擇即可，又，有關本發明所使用之半導體晶片、內部電極、外部電極等係可參照例如「CSP技術之全部Part2」(萩本英二著、工業調查會發行)之P62至72、p84至88、p39至60、「Sip技術之全部」(赤澤隆著、工業調查會發行)之p176至188、p192至205、日本特開2004－63753號公報之記載等。
根據本發明之較佳態樣，本發明之半導體裝置係藉由使用具有如上述之構成的半導體電子零件1，可使被封裝化之零件全體薄型化及小型化，又，亦使被封裝化之零件全體輕量化。再者，可減少鄰接之內部電極的間隔，故可增大能收藏於一個之封裝件內的資訊量。
又，本發明之半導體裝置係亦可於基板上安裝多段堆疊型之半導體電子零件。第5圖係本發明之一實施形態之半導體裝置的概略截面圖，其係於基板上安裝有多段堆疊型半導體電子零件2而構成者，該多段堆疊型半導體電子零件2係於半導體電子零件1進一步積層另一半導體晶片而成。如第5圖所示，設於半導體晶片10上之外部電極12與設於安裝基板109上之電極(未圖示)乃藉線路110電性連接，並將半導體電子零件2安裝於安裝基板109上。半導體電子零件2、安裝基板109及線路110係以密封樹脂111密封。又，安裝基板109之背面係設有複數之凸塊電極112。
半導體電子零件2係使半導體晶片10與半導體晶片20相對向配設而構成，並且以令半導體晶片20之與設有內部電極21的電路面相反側之面、與半導體晶片30之電路面(未圖示)相對向之方式配設半導體晶片30。
又，於半導體晶片20中，朝厚度方向設有貫通孔102，而可使半導體晶片30之電路面與半導體晶片20之電路面(未圖示)電性連接。
第6圖係本發明之一實施形態的多段堆疊型半導體電子零件2的概略截面圖。設於半導體晶片30之電路面的內部電極31係藉由焊料區域100而透過朝半導體晶片20厚度方向所設之貫通孔102與半導體晶片20之電路面導通，而與半導體晶片20上之內部電極21電性連接。此處，貫通孔102係例如於半導體晶片20之厚度方向藉鑽孔加工等形成貫通孔，對該貫通孔之內壁而實施電鍍，於實施電鍍之貫通孔內填充樹脂劑而形成。又，有關貫通孔係可參照日本特開2001－127243號公報、日本特開2002－026241號公報等。又，於半導體晶片20與半導體晶片30之間隙係填充絕緣性樹脂而形成絕緣性區域101，藉由此絕緣性區域101而使鄰接之內部電極間電性絕緣。
於上述多段堆疊型半導體電子零件2中，亦可使本發明之黏著帶用於半導體晶片20與半導體晶片30之黏著。藉由使用本發明之黏著帶，可透過貫通孔102而使半導體晶片30之內部電極31與半導體晶片20之內部電極21電性連接，並可用樹脂成分密封半導體晶片20與半導體晶片30之間隙。
又，雖無特別限定，但半導體晶片20與半導體晶片30之間的間隔距離係宜為與半導體晶片10與半導體晶片20之間隔距離X同樣之範圍。又，於半導體晶片30之側面30a與半導體晶片10之電路面所設的外部電極12之最短的間隔距離係宜與於半導體晶片20之側面20a與半導體晶片10之電路面所設的外部電極12之最短的間隔距離Y同樣的範圍。進一步複數地設於半導體晶片30之電路面的鄰接之內部電極間的最短間隔距離係宜與設於半導體晶片10乃至20之電路面的鄰接之內部電極間的間隔距離Z同樣的範圍。
在本發明中，亦可以同樣之方法於半導體晶片30上進一步積層另一半導體晶片。本發明之半導體裝置係如此做法而可進一步提高能搭載於一個封裝件內之半導體晶片的積體密度。
根據本發明之較佳態樣，本發明之半導體裝置係可提高能搭載於一個封裝件內之半導體晶片的積體密度，故可對應於電子機器之高功能化及小型化。本發明之半導體裝置係可廣泛使用於例如行動電話、數位相機、攝影機、導航器、個人電腦、遊戲機、液晶電視、液晶顯示器、EL顯示器、印表機等。
實施例
以下，依實施例，具體地說明本發明。但，本發明係不限定於此等實施例。
1.黏著帶之製作
將本發明之黏著帶的調配及製作方法之一例表示於實施例1至23。又，實施例1至10、20及21係對應於本發明之第2實施態樣的黏著帶者，實施例11至19、22及23係對應於本發明之第1實施態樣的黏著帶者。又，顯示比較例1及2作為實施例1至10、20及21之比較例、顯示比較例3及4作為實施例11至19、22及23之比較例。
<實施例1至10、20及21>以表1所示之調配，以固形分達40重量%之方式將各成分混合於丙酮中，針對所得的清漆，於已實施抗靜電處理之聚酯片上使用Comma刮刀方式塗佈器，並以使上述丙酮揮發之溫度70℃使其乾燥3分鐘，而製作厚25 μm之黏著帶。
<實施例11至19、22及23>以表2所示之調配，以固形分達40重量%之方式將各成分混合於NMP(N－甲基－2－吡咯啶酮)中，針對所得之清漆，於已實施抗靜電處理之聚酯片上使用Comma刮刀方式塗佈器，並以使上述NMP揮發之溫度150℃使其乾燥3分鐘，而製作厚50 μm之黏著帶。又，於實施例18及19中所調配之矽改質聚醯亞胺係如下進行合成。
(矽改質聚醯亞胺之合成)於具備乾燥氮氣導入管、冷却器、溫度計、攪拌機之四口燒瓶中，置入已脫水精製的N－甲基－2－吡咯啶酮(NMP)200g，一邊流入氮氣一邊激烈攪拌10分鐘。
然後，投入1,3－雙－(3－胺基苯氧基)苯29g、3,3－(1,1,3,3,5,5,7,7,9,9,11,11,13,13,15,15,17,17,19,19－二十甲基－1,19－十矽氧烷二基)雙－1－丙烷胺10g、1,3－雙(3－胺丙基)－1,1,3,3－四甲基二矽氧烷)4g，攪拌混合至成為均一。均一溶解後，以冰水浴冷却系統至5℃，花15分鐘以粉末狀直接添加4,4’－氧二酞酸二酐40g，然後，持續攪拌2小時。此時，燒瓶保持於5℃。
其後，卸下氮氣導入管與冷却器，將充滿二甲苯之Dean－Stark管裝載於燒瓶中，於系統內添加甲苯50g。取代油浴，而將系統加熱至170℃，使所產生之水除去至系外。加熱4小時後，看不出來自系統的水之產生。
冷却後，將此反應溶液投入於大量之甲醇中，使矽改質聚醯亞胺析出。過濾固形分後，以80℃減壓乾燥12小時，除去溶劑，得到固形樹脂。以KBr錠劑法測定紅外線吸收光譜後，看出源自環狀醯亞胺鍵的5.6 μm之吸收，但看不出源自於醯胺鍵之6.06 μm的吸收，而此樹脂可確認出約100%醯亞胺化。
<比較例1及2>以表3所示之調配，以固形分達40重量%之方式使各成分混合於丙酮中，針對所得之清漆，於已實施抗靜電處理之聚酯片上使用Comma刮刀方式塗佈器，並以使上述丙酮揮發之溫度70℃使其乾燥3分鐘，而製作厚25 μm之黏著帶。
<比較例3及4>以表3所示之調配，以固形分達40重量%之方式使各成分混合於NMP(N－甲基－2－吡咯啶酮)中，針對所得之清漆於已實施抗靜電處理之聚酯片使用Comma刮刀方式塗佈器，並以使上述NMP揮發之溫度150℃使其乾燥3分鐘，而製作厚50 μm之黏著帶。
[1]在焊料融點之熔融黏度的測定如以下做法而測定出實施例1至23及比較例1至4所得到之黏著帶的焊料融點之熔融黏度。有關實施例1至10、20及21及比較例1、2係藉下述之測定條件1測定熔融黏度。又，有關實施例11至19、22及23及比較例3、4係藉下述之測定條件2測定熔融黏度。
(測定條件1)對厚100 μm之黏著帶，以黏彈性測定裝置(JASCO INTERNATIONAL(股)製)、昇溫速度10℃/分、頻率0.1Hz下，以應變固定－應力檢測進行測定，將屬於Sn/Bi＝42/58之融點的環境溫度138℃中之黏度作為測定值。
(測定條件2)對厚100 μm之黏著帶，以黏彈性測定裝置(JASCO INTERNATIONAL(股)製)、昇溫速度30℃/分、頻率1.0Hz下，以應變固定－應力檢測進行測定，將屬於Sn/Ag＝96.5/3.5之融點的環境溫度223℃中之黏度作為測定值。
[2]焊料潤濕展開率之測定以如下之做法而測定實施例11至19、22及23及比較例3、4所得到的黏著帶之焊料潤濕展開率。
(1)裸Cu板(平井精密工業(股)製)貼黏於厚15 μm之黏著帶。
(2)於黏著帶上靜置下述直徑為500 μm之焊料球。
(i)「M31」(Sn/Ag/Cu、融點217℃、千住金屬工業(股)製)(ii)「L20」(Sn/Bi、融點138℃、千住金屬工業(股)製)
(3)依據ASTM B 545，將加熱板加熱至比各焊料之融點高30℃的溫度，使上述試樣於加熱板上加熱20秒鐘。
(4)量測於裸Cu板上焊料潤濕展開率之焊料球之高度。
(5)依下述之式(I)，算出焊料潤濕展開率。
焊料潤濕展開率(%)＝[{(焊料球的直徑)－(潤濕展開後之焊料的厚度)}/(焊料球的直徑)]×100 (I)
將焊料融點之熔融黏度及焊料潤濕展開率的測定結果表示於表2及3中。
2.半導體電子零件之製造
其次，使用實施例1至23所得到之黏著帶而製造第4圖之構造的半導體電子零件。第7圖係實施例1至10、20及21中之製造方法的步驟說明圖。第8圖係實施例11至19、22及23中之製造方法的步驟說明圖。以下，有關實施例1至10、20及21係參照第7圖進行說明，有關實施例11至19、22及23係參照第8圖進行說明。
<實施例1至10、20及21>首先，於半導體晶片10、20之電路面全體形成0.4 μm厚之熱氧化膜114。然後，以0.4 μm厚濺鍍鋁/0.5Cu作為金屬層，並利用阻劑而乾蝕刻配線所需之部分以外而形成內部電極11、21。除去遮罩後，藉CVD法於全面形成0.2 μm厚之SiN膜(鈍化膜)，再者，利用阻劑而軟蝕刻金屬層部分(內部電極表面)。然後，塗佈、顯影3 μm厚之聚醯亞胺層，使金屬層部分開口，再者，使聚醯亞胺層硬化，形成應力緩和層(保護膜)107。然後，濺鍍Ti 0.05 μm厚、濺鍍Cu 1 μm厚，以此順序，形成UBM層103、104。如此，而於半導體晶片10、20上形成連接墊(墊尺寸：60 μm見方、墊間距離：40 μm、墊節距：100 μm)。此處，半導體晶片10係使用10mm見方、725 μm厚者，半導體晶片20係使用6mm見方、725 μm厚者。又，在實施例1至10中係以間隔距離達250 μm之方式於半導體晶片10上配置外部電極。
繼而，將實施例1至10、20及21所得到之黏著帶分別切成半導體晶片10的連接墊面之大小(6mm見方)，並於80℃之熱盤上進行貼黏，其後，剝除基材之聚酯片。其次，使半導體晶片20之連接墊面與半導體晶片10之連接墊面相對向，進行對準。對準係藉由併設於覆晶黏晶機(Flip chip bonder)(澁谷工業製、DB200)之照相機，辨認位於晶片之連接墊面的對準記號。其後，使用此覆晶黏晶機，以表4記載之一次加熱條件進行熱壓接，實施焊料連接。再者，使烘箱設定於表4記載之二次加熱條件，施加預定之熱履歷，實施黏著劑的硬化。結果，得到具有表4所示之間隔距離X、Y、Z的半導體電子零件。
<比較例1、2>除使用比較例1及2所得到之黏著帶取代實施例1至10、20及21所得之黏著帶以外，其餘係以與上述實施例1至10、20及21同樣做法而得到半導體電子零件。
<實施例11至19、22及23>首先，於半導體晶片10、20之電路面以與上述實施例1至10、20及21同樣做法而形成連接墊(墊尺寸：60 μm見方、墊間距離：40 μm、墊節距：100 μm)。再者，於形成於半導體晶片20之連接墊上，利用在UBM層104之部分被開口之光罩，使50 μm徑之Sn－Ag焊料球載置於塗佈有助融劑之UBM104上。其次透過回流，使焊料球與UBM104形成焊料球105(參照第8圖)。半導體晶片10、20係使用與於實施例10至20、21所使用者相同者。又實施例11至19、22及23中係於半導體晶片10上以間隔距離Y成為250 μm之方式配置外部電極。
繼而，使實施例11至19、22及23所得到之黏著帶分別切成半導體晶片10的連接墊面之大小(6mm見方)，並於80℃之熱盤上進行貼黏，其後，剝除基材之聚酯片。其次，使半導體晶片20之連接墊面與半導體晶片10之連接墊面相對向，以與實施例1至10、20及21同樣做法而進行對準。其後，使用此覆晶黏晶機，以表5記載之一次加熱條件進行熱壓接，實施焊料連接。再者，使烘箱設定於表5記載之二次加熱條件，施加預定之熱履歷，實施黏著劑的硬化。結果，得到具有表5所示之間隔距離X、Y、Z的半導體電子零件。
<比較例3、4>除使用比較例3及4所得到之黏著帶取代實施例11至19、22及23所得之黏著帶以外，其餘係以與上述實施例11至19、22及23同樣做法而得到半導體電子零件。
(1)間隔距離X、Y、Z之測定以熱硬化環氧樹脂(日本化藥工業製：RE－403s、富士化成工業：Fujicure5300)包覆所得到之半導體電子零件，實施截面研磨。所得到之截面以Keyence製、Digital scope進行投影，利用影像處理軟體VHS－500而算出間隔距離X、Y、Z。
(2)導通試驗使所得到之半導體電子零件的半導體晶片之連接率藉頻帶測試器，測定半導體晶片積層後及溫度循環試驗(使－65℃ 1小時、150℃ 1小時交互地反覆)1000小時後的兩者。連接率係依如下述式算出。
連接率(%)＝{(所導通之墊片數)/(所測定之墊片數)}×100
評估基準係如下述。
○：連接率100%×：連接率未達100%
(3)外部電極之污染評估於所得到之半導體電子零件中以金屬顯微鏡觀察半導體晶片10上之外部電極12(線路黏合墊)，觀察是否被黏著帶污染。評估基準如下述。
無外部電極之污染(黏著帶之熔融成分未到達外部電極)。
有外部電極之污染(黏著帶之熔融成分到達外部電極)。
結果如表4及表5所示。
如表4及表5所示，在實施例1至23中任一者均不會污染外部電極，可得到滿足所希望之範圍的間隔距離X、Y、Z之半導體電子零件。又，導通試驗之結果亦良好，可知所得到之半導體電子零件係連接信賴性優。依常用方法，藉由將如此所得到之半導體電子零件安裝於基板上，而可得到本發明之半導體裝置。
然而，在比較例1至4中，係可知任一者外部電極均被黏著帶污染，可得到無法電性連接者或連接信賴性欠缺者，無法使用作為半導體電子零件。
從以上之事，藉由使用本發明之黏著帶，可理解電性連接良好，可製造能高密度地搭載半導體晶片之晶片堆疊型的半導體裝置。
[產業上之利用可能性]
本發明之黏著帶係於半導體裝置中可以一次進行半導體晶片與半導體晶片之電性連接及密封。藉由使用本發明之黏著帶，可提供能高密度地搭載半導體積體電路之晶片堆疊型的半導體裝置，並藉此，可製造對應於高功能化及小型化之要求的電子零件。
1．．．半導體電子零件
2．．．多段堆疊型半導體電子零件
10．．．第1半導體晶片
11．．．第1內部電極
12．．．外部電極
20．．．第2半導體晶片
20a．．．第2半導體晶片側面
21．．．第2內部電極
30．．．第3半導體晶片
30a．．．第3半導體晶片側面
31．．．第3內部電極
100．．．焊料區域
101．．．絕緣性區域
102．．．貫通孔
103．．．UBM層
104．．．UBM層
105．．．焊料凸塊
106．．．黏著帶
107．．．保護膜
108．．．黏著帶
108a．．．焊料粉
109．．．安裝基板
110．．．線路
111．．．密封樹脂
112．．．凸塊電極
113．．．鈍化膜
114．．．熱氧化膜
第1圖(a)至(c)係有關本發明之一實施形態的黏著帶之使用方法的步驟說明圖。
第2圖(a)至(c)係有關本發明之一實施形態的黏著帶之使用方法的步驟說明圖。
第3圖係本發明之一實施形態的半導體裝置之概略截面圖。
第4圖(a)及(b)係於本發明之一實施形態的半導體裝置所使用之半導體電子零件的概略俯視圖及概略截面圖。
第5圖係有關本發明之一實施形態之多段堆疊型半導體裝置的概略截面圖。
第6圖係於本發明之一實施形態的多段堆疊型半導體裝置所使用之多段堆疊型半導體電子零件之概略截面圖。
第7圖係於本發明之實施形態的半導體裝置所使用之半導體電子零件的製造方法的步驟說明圖。
第8圖係於本發明之實施形態的半導體裝置所使用之半導體電子零件的製造方法的步驟說明圖。
10．．．第1半導體晶片
11．．．第1內部電極
20．．．第2半導體晶片
21．．．第2內部電極
100．．．焊料區域
101．．．絕緣性區域
103．．．UBM層
104．．．UBM層
105．．．焊料凸塊
106．．．黏著帶
113．．．鈍化膜

Claims (14)

  1. 一種黏著帶，其係於製造具備第1半導體晶片與第2半導體晶片、且前述第1半導體晶片之電路面與前述第2半導體晶片之電路面係相對向配設而構成之晶片堆疊型之半導體裝置時，用以電性連接前述第1半導體晶片與前述第2半導體晶片之黏著帶，而前述第1半導體晶片與前述第2半導體晶片之間隔距離為25μm以下，該黏著帶之厚度為5至300μm，其特徵在於含有：(A)薄膜形成性樹脂10至50重量%；(B)硬化性樹脂30至80重量%；(C)具有助融劑活性之硬化劑1至20重量%。
  2. 如申請專利範圍第1項之黏著帶，其中，前述(C)具有助融劑活性之硬化劑之含量為10重量%以上至20重量%以下。
  3. 如申請專利範圍第1項之黏著帶，其中，前述薄膜形成性樹脂為選自由(甲基)丙烯酸系樹脂、苯氧樹脂及聚醯亞胺樹脂所構成之群組的至少一種。
  4. 如申請專利範圍第1項的黏著帶，其中，前述硬化性樹脂為環氧樹脂。
  5. 如申請專利範圍第1項的黏著帶，其中，具有前述助融劑活性之硬化劑為選自由脂肪族二羧酸及具有羧基與酚性羥基之化合物所構成之群組的至少一種。
  6. 如申請專利範圍第5項之黏著帶，其中，前述脂肪族二羧酸為癸二酸。
  7. 如申請專利範圍第5項之黏著帶，其中，具有前述羧基與酚性羥基之化合物為選自酚酞啉(phenolphthalin)及龍膽酸之至少一種。
  8. 如申請專利範圍第1項的黏著帶，且於該黏著帶上配置直徑500μm之含錫的焊料球，以比該焊料球之融點高30℃之溫度加熱20秒後，以式(I)所示之焊料潤濕展開率為40%以上：焊料潤濕展開率(%)=[{(焊料球之直徑)-(潤濕展開後之焊料的厚度)}/(焊料球之直徑)]×100 (I)。
  9. 如申請專利範圍第8項之黏著帶，其中，前述焊料潤濕展開率為60%以上時，含有脂肪族二羧酸作為(C)具有助融劑活性的硬化劑。
  10. 如申請專利範圍第8項之黏著帶，其中，前述焊料潤濕展開率為40至60%時，含有具羧基與酚性羥基之化合物作為(C)具有助融劑活性的硬化劑。
  11. 如申請專利範圍第1項的黏著帶，且厚度100μm之該黏著帶之223℃時的熔融黏度為10Pa‧s至200000Pa‧s。
  12. 如申請專利範圍第1項的黏著帶，其相對於焊料粉以外之構成成分的合計100重量份，係進一步含有焊料粉30至200重量份。
  13. 如申請專利範圍第12項的黏著帶，且厚度100μm之該黏著帶之138℃時的熔融黏度為1Pa‧s至10000Pa‧s。
  14. 一種晶片堆疊型之半導體裝置，係使用如申請專利範圍 第1至13項中任一項的黏著帶而電性連接半導體晶片與半導體晶片而構成。
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