JP3769688B2 - 端子間の接続方法及び半導体装置の実装方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83886—Involving a self-assembly process, e.g. self-agglomeration of a material dispersed in a fluid
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Description
〔実施例〕
以下、本発明の実施例について、図4ないし図10に基づいて説明する。本実施例では、導電性接着剤に含まれる導電性粒子としてSn/48Inの組成を有する合金を用い、樹脂として熱硬化性樹脂を用いたが、本発明はこれに限定されるものではない。
導電性接着剤に用いる以下の導電性粒子及び樹脂、さらに、以下の導電性接着剤のDSC分析(商品名DSC7、Perkin Elmer社製を使用)を行った。
導電性粒子として、Sn/48Inの組成を有する合金を用い、昇温速度5℃/secにてDSC分析を行った。その結果を図4に示す。図4に基づいて解析した結果、上記合金の溶融開始温度は115.93℃であり、スペクトルのピーク位置での温度は119.45℃であった。
樹脂として、還元性を有していないエポキシ系樹脂であるエピクロンSR−A(大日本インキ化学工業社製)、還元性を有しているエポキシ系樹脂であるペンギンセメントRD−0205(サンスター技研社製)について、昇温速度5℃/secにてDSC分析を行った。その結果を図5(a)(b)に示す。図5(a)(b)に基づいて解析し、上記の各樹脂の硬化開始温度及び、スペクトルのピーク位置での温度(ピーク温度)を求めた結果を表2に示す。
導電性粒子の体積含有率が50%となるように、上記(1)の合金(0.843g)と、上記(2)のエピクロンSR−A(0.157g)とを混合して導電性接着剤を調製し、該導電性接着剤について、昇温速度5℃/secにてDSC分析を行った。その結果を図6に示す。図6に示すように、この導電性接着剤内での合金の溶融温度は、スペクトルのピーク位置で、119℃であり、図4に示す結果とほぼ一致した。
10mm×10mm×1mmの銅板を、エメリー紙で研磨した後、さらにバフで研磨した。次いで、研磨した一対の銅板を、6%塩酸による脱酸、及び、アセトンを用いた超音波洗浄による脱脂によって表面処理を行った。次いで、導電性粒子の体積含有率が50%となるように、導電性粒子としてのSn/48In合金と、樹脂としてのエピクロンSR−Aとを混合して、導電性接着剤を調製し、この導電性接着剤を一方の銅板表面に塗布し、さらにこの銅板表面にステンレス球のスペーサーを配置した。続いて、銅板上に塗布された導電性接着剤上に他方の銅板を配置し、この銅板上に100gの分銅をのせて数秒放置した後、分銅をおろして、得られた試料(以下、加熱前試料)の導電性接着剤内の導電性粒子を観察した。その結果を図7に示す。
導電性粒子の体積含有率が30%となるように、導電性粒子としてのSn/48In合金と、樹脂としてペンギンセメントRD−0205とを混合した導電性接着剤を用いた以外は、上記実施例1と同様の手法で加熱後試料を得た。
導電性接着剤に含まれる樹脂の表面活性化効果について調べるために、銅板間の距離を300μmに制御して、導電性粒子の溶融状態を調べた。
次に、図12ないし図14に基づいて実施例4を説明する。
1b 導電性接着剤(異方性導電樹脂)
2a 硬化樹脂
2b 樹脂(樹脂成分)
3a 導電物質
3b 導電性粒子
10 基板(配線基板)
11 回路電極(ランド、端子)
20 半導体チップ
21 電極パッド(端子)
Claims (5)
- 少なくとも導電性粒子と該導電性粒子の融点で硬化が完了しない樹脂成分とを含む金属フィラー含有樹脂を介して、端子同士を互いに対向させて配置する端子配置ステップと、
上記導電性粒子の融点よりも高く、かつ上記樹脂成分の硬化が完了しない温度に、上記金属フィラー含有樹脂を加熱する樹脂加熱ステップと、
上記樹脂成分を硬化させる樹脂成分硬化ステップとを含み、
上記加熱ステップにて、導電性粒子の溶融凝集により端子間に導電性粒子が集まり端子間が電気的に接続されており、
上記端子配置ステップにおける上記金属フィラー含有樹脂が、少なくとも、対向する各上記端子間を含んで、各上記端子が設けられている部材の端子が形成されている領域同士で挟まれる対向空間全体に充填されている状態となるように、上記金属フィラー含有樹脂を供給することを特徴とする端子間の接続方法。 - 上記樹脂加熱ステップにて、上記金属フィラー含有樹脂を介して、両端子を圧接させることを特徴とする請求項1記載の端子間の接続方法。
- 上記樹脂成分は、端子表面及び導電性粒子表面のうちの少なくとも一方を還元する還元性を有する樹脂であることを特徴とする請求項1又は2記載の端子間の接続方法。
- 半導体チップの電極パッドと、該電極パッドに対応するように設けられた配線基板上の回路電極とを、少なくとも導電性粒子と樹脂成分とを含む金属フィラー含有樹脂を介して対向するように配置する電極配置ステップと、
上記導電性粒子の融点よりも高く、かつ上記樹脂成分の硬化が完了しない温度に、上記金属フィラー含有樹脂を加熱する樹脂加熱ステップと、
上記樹脂成分を硬化させる樹脂成分硬化ステップとを含み、
上記加熱ステップにて、導電性粒子の溶融凝集により端子間に導電性粒子が集まり端子間が電気的に接続されており、
上記電極配置ステップにおける上記金属フィラー含有樹脂が、少なくとも、対向する上記電極パッドと上記回路電極との間を含んで、上記半導体チップと上記配線基板との端子が形成されている領域で挟まれる対向空間全体に充填されている状態となるように、上記金属フィラー含有樹脂を供給することを特徴とする半導体装置の実装方法。 - 少なくとも導電性粒子と該導電性粒子の融点で硬化が完了しない樹脂成分とを含む異方性導電樹脂を介して、端子同士を互いに対向させて配置する端子配置ステップと、
上記導電性粒子の融点よりも高く、かつ上記樹脂成分の硬化が完了しない温度に、上記異方性導電樹脂を加熱する樹脂加熱ステップと、
上記樹脂成分を硬化させる樹脂成分硬化ステップとを含み、
上記樹脂成分は、端子表面及び導電性粒子表面のうちの少なくとも一方を還元する還元性を有する樹脂であることを特徴とする端子間の接続方法。
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