WO2016043265A1 - 導電ペースト、接続構造体及び接続構造体の製造方法 - Google Patents
導電ペースト、接続構造体及び接続構造体の製造方法 Download PDFInfo
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- WO2016043265A1 WO2016043265A1 PCT/JP2015/076467 JP2015076467W WO2016043265A1 WO 2016043265 A1 WO2016043265 A1 WO 2016043265A1 JP 2015076467 W JP2015076467 W JP 2015076467W WO 2016043265 A1 WO2016043265 A1 WO 2016043265A1
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- electrode
- conductive paste
- solder
- connection
- target member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/147—Structural association of two or more printed circuits at least one of the printed circuits being bent or folded, e.g. by using a flexible printed circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/281—Applying non-metallic protective coatings by means of a preformed insulating foil
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Definitions
- the present invention relates to a conductive paste containing solder particles.
- the present invention also relates to a connection structure using the conductive paste and a method for manufacturing the connection structure.
- Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
- anisotropic conductive material conductive particles are dispersed in a binder.
- the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
- FOG Glass
- COF Chip on Film
- an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do.
- a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
- Patent Document 1 includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent include the resin layer.
- An adhesive tape present therein is disclosed. This adhesive tape is in the form of a film, not a paste.
- Patent Document 1 discloses a bonding method using the above-mentioned adhesive tape. Specifically, a first substrate, an adhesive tape, a second substrate, an adhesive tape, and a third substrate are laminated in this order from the bottom to obtain a laminate. At this time, the first electrode provided on the surface of the first substrate is opposed to the second electrode provided on the surface of the second substrate. Moreover, the 2nd electrode provided in the surface of the 2nd board
- Patent Document 2 discloses an anisotropic conductive material in which conductive particles are dispersed in an insulating binder.
- This anisotropic conductive material has a minimum melt viscosity [ ⁇ 0 ] of 1.0 ⁇ 10 2 to 1.0 ⁇ 10 6 mPa ⁇ sec.
- 1 ⁇ [ ⁇ 1 ] / [ ⁇ 0 ] ⁇ 3 ([ ⁇ 0 ] is the minimum melt viscosity of the anisotropic conductive material, and [ ⁇ 1 ] is the temperature T 0 indicating the minimum melt viscosity. (Melt viscosity at a temperature T 1 lower by 30 ° C.).
- Patent Document 3 discloses an anisotropic conductive material containing a curable compound, a thermal radical initiator, a photo radical initiator, and conductive particles.
- Patent Document 4 describes an anisotropic conductive material containing conductive particles and a resin component that cannot be cured at the melting point of the conductive particles.
- the conductive particles include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), cadmium (Cd ), Gallium (Ga), silver (Ag), thallium (Tl), and the like, and alloys of these metals.
- Patent Document 4 a resin heating step for heating the anisotropic conductive resin to a temperature higher than the melting point of the conductive particles and at which the curing of the resin component is not completed, and a resin component curing step for curing the resin component
- the electrical connection between the electrodes is described.
- Patent Document 1 describes that mounting is performed with the temperature profile shown in FIG. In Patent Document 1, the conductive particles melt in a resin component that is not completely cured at a temperature at which the anisotropic conductive resin is heated.
- a semiconductor chip having a plurality of connection terminals is disposed so as to face a wiring board having a plurality of electrode terminals, and the electrode terminals of the wiring board and the above-mentioned semiconductor chip
- a flip chip mounting method for electrically connecting a connection terminal includes (1) a step of supplying a resin containing solder powder and a convection additive onto the surface of the wiring board having the electrode terminals, and (2) the semiconductor chip on the resin surface. (3) a step of heating the wiring substrate to a temperature at which the solder powder melts, and (4) a step of curing the resin after the heating step.
- a connection body for electrically connecting the electrode terminal and the connection terminal is formed, and in the resin curing step (4), the semiconductor chip is connected to the wiring board. Secure to.
- the adhesive tape described in Patent Document 1 is a film, not a paste. For this reason, it is difficult to efficiently arrange the solder powder on the electrodes (lines). For example, in the adhesive tape described in Patent Document 1, a part of the solder powder is easily placed in a region (space) where no electrode is formed. Solder powder disposed in a region where no electrode is formed does not contribute to conduction between the electrodes.
- the solder powder or conductive particles may not be efficiently arranged on the electrodes (lines).
- the moving speed of the solder powder or conductive particles onto the electrode may be slow.
- Patent Documents 1 and 2 there is no specific description of the conductive particles used for the anisotropic conductive material.
- conductive particles are used in which a copper layer is formed on the surface of resin particles, and a solder layer is formed on the surface of the copper layer.
- the central part of the conductive particles is composed of resin particles.
- An object of the present invention is to provide a conductive paste capable of efficiently arranging solder particles on electrodes, preventing positional displacement between the electrodes, and improving conduction reliability between the electrodes. is there. Moreover, this invention is providing the manufacturing method of the connection structure and connection structure using the said electrically conductive paste.
- the thermosetting component includes a thermosetting compound and a thermosetting agent, and a plurality of solder particles, and the thermosetting compound includes a crystalline thermosetting compound, and the solder
- the conductive paste is provided wherein the particles are particles in which both the central portion and the conductive outer surface are solder.
- the crystalline thermosetting compound is solid at 25 ° C.
- the melting point of the crystalline thermosetting compound is 80 ° C. or higher and 150 ° C. or lower.
- the molecular weight of the crystalline thermosetting compound is 300 or more and 500 or less.
- the crystalline thermosetting compound is a benzophenone type epoxy compound.
- the average aspect ratio of the crystal of the crystalline thermosetting compound is 5 or less.
- the average major axis of the crystalline thermosetting compound crystal is 1 / 1.5 or less of the average particle diameter of the solder particles.
- the average major axis of the crystalline thermosetting compound crystal is 1/10 or more of the average particle diameter of the solder particles.
- the melting point of the crystalline thermosetting compound is lower than the melting point of the solder.
- the conductive paste contains a flux, and the melting point of the crystalline thermosetting compound is lower than the activation temperature of the flux.
- the content of the crystalline thermosetting compound is 10% by weight or more in the total 100% by weight of the thermosetting compound.
- the conductive paste does not contain a filler or contains a filler at 5% by weight or less.
- the crystalline thermosetting compound is dispersed in particles in the conductive paste.
- the conductive paste includes another thermosetting compound different from the crystalline thermosetting compound.
- the average particle diameter of the solder particles is 1 ⁇ m or more and 60 ⁇ m or less.
- the content of the solder particles is 10% by weight or more and 80% by weight or less.
- a first connection target member having at least one first electrode on the surface
- a second connection target member having at least one second electrode on the surface
- the connection object member and a connection part that connects the second connection object member, the connection part is a cured product of the conductive paste described above, and the first electrode and the second electrode
- a connection structure is provided in which an electrode is electrically connected by a solder portion in the connection portion.
- the first connection target member and the second connection target member are disposed so as to face each other, and by heating the conductive paste to a temperature equal to or higher than the melting point of the solder particles and equal to or higher than the curing temperature of the thermosetting component.
- a step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion How to manufacture connection structures There is provided.
- the conductive paste in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the conductive paste includes The weight of the second connection target member is added, or at least one of the step of arranging the second connection target member and the step of forming the connection portion is pressurized, and the first The pressure of pressurization is less than 1 MPa in both the step of disposing the connection target member 2 and the step of forming the connection portion.
- connection portion in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the conductive paste includes The weight of the second connection target member is added.
- the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
- connection structure when a portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode is viewed, it is preferable that the solder portion in the connection portion is arranged in 50% or more of the area of 100% of the portion where the first electrode and the second electrode face each other. In the connection structure, when a portion where the first electrode and the second electrode face each other in a direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is viewed In addition, it is preferable that 70% or more of the solder portion in the connection portion is disposed in a portion where the first electrode and the second electrode face each other.
- the conductive paste according to the present invention includes a thermosetting compound and a thermosetting agent as a thermosetting component, and a plurality of solder particles, and the thermosetting compound includes a crystalline thermosetting compound, and the solder particles Since both the central portion and the conductive outer surface are solder particles, when the electrodes are electrically connected, the solder particles can be efficiently disposed on the electrodes. It is possible to prevent misalignment between the electrodes and to improve the reliability of conduction between the electrodes.
- FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive paste according to an embodiment of the present invention.
- 2A to 2C are cross-sectional views for explaining each step of an example of a method for manufacturing a connection structure using the conductive paste according to the embodiment of the present invention.
- FIG. 3 is a cross-sectional view showing a modification of the connection structure.
- the conductive paste according to the present invention includes a thermosetting compound and a thermosetting agent as a thermosetting component, and a plurality of solder particles.
- the thermosetting compound includes a crystalline thermosetting compound.
- both a center part and an electroconductive outer surface are formed with the solder.
- the solder particles are particles in which both the central portion of the solder particles and the conductive outer surface are solder.
- the conductive paste according to the present invention since the above-described configuration is adopted, when the electrodes are electrically connected, the plurality of solder particles are likely to gather between the upper and lower electrodes, and the plurality of solder particles are collected. It can arrange
- the alignment of the electrode of the first connection target member and the electrode of the second connection target member is performed. Even when the first connection target member and the second connection target member are overlapped with each other in a state of being shifted, the shift is corrected, and the electrodes of the first connection target member and the second connection target member are corrected.
- the electrode can be connected (self-alignment effect).
- the conductive paste, the conductive particles used together with the thermosetting compound and the thermosetting agent are solder particles, and the thermosetting compound is crystalline thermosetting. Being a compound greatly contributes.
- the conductive particles are not formed on the electrodes. Since it becomes difficult to gather and the solder bonding property between the conductive particles is low, the conductive particles that have moved onto the electrode are likely to move out of the electrode. For this reason, the effect of suppressing the displacement between the electrodes is also reduced.
- Crystalstallinity in a crystalline thermosetting compound means a state in which molecular chains are regularly arranged, and the compound has a glass transition temperature and a melting point.
- the average aspect ratio of the crystalline thermosetting compound crystal is preferably 5 or less.
- the conductive particles when used after storage, the conductive particles may be more difficult to be disposed on the electrode (line).
- the storage stability of the conductive paste is excellent. For this reason, it is possible to efficiently arrange the solder on the electrodes regardless of whether the conductive paste is stored before or after storage, and the conduction reliability between the electrodes can be improved.
- the viscosity of the conductive paste becomes sufficiently low when heat is applied to the conductive paste.
- the crystallinity of the crystalline thermosetting compound is lost, whereby the viscosity of the conductive paste is sufficiently lowered and the movement of the solder is promoted.
- the movement performance of the solder particles may be different before and after storage of the conductive paste. This is presumably because the crystalline state of the crystalline thermosetting compound changes.
- the average aspect ratio of the crystalline crystal of the crystalline thermosetting compound is 5 or less, the movement performance of the solder particles is difficult to change before and after storage of the conductive paste. Was found.
- the present invention it is possible to prevent displacement between the electrodes.
- the electrode of the first connection target member and the electrode of the second connection target member Even when the first connection target member and the second connection target member are overlapped in a state where the alignment of the first connection target member and the second connection target member are overlaid, the shift is corrected and the electrode of the first connection target member and the second connection target are corrected.
- the electrode of the member can be connected (self-alignment effect). In order to obtain such an effect, using a conductive paste having a specific composition greatly contributes.
- Examples of the method of setting the average crystal aspect ratio of the crystalline thermosetting compound to 5 or less include a method of pulverizing the crystalline thermosetting compound. After the crystalline thermosetting compound is pulverized, it is preferably blended into the conductive paste. After selecting the crystalline thermosetting compound so that the average aspect ratio is 5 or less, the crystalline thermosetting compound may be used.
- the average aspect ratio of the crystal of the crystalline thermosetting compound is Preferably it is 4 or less.
- the average aspect ratio is an average of the aspect ratios of a plurality of crystals.
- the aspect ratio indicates a major axis / minor axis.
- the aspect ratio is an aspect ratio in the conductive paste.
- the average aspect ratio of the crystalline thermosetting compound crystal is 1 or more.
- the crystal of the crystalline thermosetting compound is preferably a needle crystal.
- the average aspect ratio of the crystal of the crystalline thermosetting compound is: Preferably it is 1.3 or more, More preferably, it is 1.5 or more.
- the average major axis of the crystalline thermosetting compound is: Preferably, it is 1 / 1.5 or less of the average particle diameter of the solder particles, more preferably 1/2 or less of the average particle diameter of the solder particles.
- the average major axis of the crystalline thermosetting compound is preferably Is 1/10 or more of the average particle diameter of the solder particles, more preferably 1/8 or more of the average particle diameter of the solder particles.
- the melting point of the crystalline thermosetting compound is preferably lower than the melting point of the solder.
- the absolute value of the difference between the melting point of the crystalline thermosetting compound and the melting point of the solder is preferably 10 ° C. from the viewpoint of more efficiently arranging the solder on the electrodes and further suppressing the displacement between the electrodes.
- it is 20 degreeC or more, Preferably it is 80 degrees C or less, More preferably, it is 70 degrees C or less.
- the conductive paste preferably contains a flux.
- the melting point of the crystalline thermosetting compound is preferably lower than the activation temperature of the flux.
- the absolute value of the difference between the melting point of the crystalline thermosetting compound and the activation temperature of the flux is preferably 5 from the viewpoint of more efficiently arranging the solder on the electrodes and further suppressing the displacement between the electrodes. ° C or higher, more preferably 10 ° C or higher, preferably 60 ° C or lower, more preferably 50 ° C or lower.
- the present invention In the conductive paste according to the above, the crystalline thermosetting compound is preferably dispersed in the form of particles.
- the viscosity ( ⁇ 25) at 25 ° C. of the conductive paste is preferably 10 Pa ⁇ s or more, more preferably 50 Pa ⁇ s or more, and further preferably 100 Pa ⁇ s or more. , Preferably 800 Pa ⁇ s or less, more preferably 600 Pa ⁇ s or less, and even more preferably 500 Pa ⁇ s or less.
- the viscosity ( ⁇ 25) can be adjusted as appropriate to the type and amount of the compounding ingredients. Further, the use of a filler can make the viscosity relatively high.
- the viscosity ( ⁇ 25) can be measured using, for example, an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) and the like at 25 ° C. and 5 rpm.
- the conductive paste according to the present invention can be suitably used for a connection structure according to the present invention described later and a method for manufacturing the connection structure.
- the conductive paste is preferably an anisotropic conductive paste.
- the conductive paste is preferably used for electrical connection of electrodes.
- the conductive paste is preferably a circuit connection material.
- solder particles have solder on a conductive outer surface. In the solder particles, both the central portion and the conductive outer surface are formed of solder. The solder particles are particles in which both the central portion and the conductive outer surface are solder.
- the zeta potential on the surface of the solder particles is positive.
- the zeta potential of the surface of the solder particle may not be positive.
- Zeta potential measurement method 0.05 g of solder particles are put in 10 g of methanol and subjected to ultrasonic treatment or the like to uniformly disperse to obtain a dispersion.
- the zeta potential can be measured by electrophoretic measurement using this dispersion and “Delsamax PRO” manufactured by Beckman Coulter.
- the zeta potential of the solder particles is preferably 0 mV or more, more preferably more than 0 mV, preferably 10 mV or less, more preferably 5 mV or less, even more preferably 1 mV or less, still more preferably 0.7 mV or less, particularly preferably 0.5 mV. It is as follows. When the zeta potential is less than or equal to the above upper limit, the solder particles hardly aggregate in the conductive paste before use. When the zeta potential is 0 mV or more, the solder particles efficiently aggregate on the electrode during mounting.
- the solder particles preferably have a solder particle body and an anionic polymer disposed on the surface of the solder particle body.
- the solder particles are preferably obtained by surface-treating the solder particle body with an anionic polymer or a compound that becomes an anionic polymer.
- the solder particles are preferably a surface treated product of an anion polymer or a compound that becomes an anion polymer.
- the said anion polymer and the compound used as the said anion polymer only 1 type may respectively be used and 2 or more types may be used together.
- an anionic polymer for example, a (meth) acrylic polymer copolymerized with (meth) acrylic acid, synthesized from a dicarboxylic acid and a diol and having carboxyl groups at both ends
- Polyester polymer polymer obtained by intermolecular dehydration condensation reaction of dicarboxylic acid and having carboxyl groups at both ends, polyester polymer synthesized from dicarboxylic acid and diamine and having carboxyl groups at both ends, and modified poval having carboxyl groups ( A method of reacting a carboxyl group of an anionic polymer with a hydroxyl group on the surface of a solder particle body using “GOHSEX T” manufactured by Nippon Synthetic Chemical Co., Ltd., etc.
- anion portion of the anionic polymer examples include the carboxyl group, and other than that, a tosyl group (p—H 3 CC 6 H 4 S ( ⁇ O) 2 —), a sulfonate ion group (—SO 3 —) ), And phosphate ion groups (—PO 4 ⁇ ) and the like.
- a compound having a functional group that reacts with a hydroxyl group on the surface of the solder particle body and having a functional group that can be polymerized by addition or condensation reaction is used.
- the method of polymerizing on the surface is mentioned.
- the functional group that reacts with the hydroxyl group on the surface of the solder particle body include a carboxyl group and an isocyanate group.
- the functional group that polymerizes by addition and condensation reactions include a hydroxyl group, a carboxyl group, an amino group, and (meth).
- An acryloyl group is mentioned.
- the weight average molecular weight of the anionic polymer is preferably 2000 or more, more preferably 3000 or more, preferably 10,000 or less, more preferably 8000 or less.
- the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, it is easy to dispose an anionic polymer on the surface of the solder particle body, and it is easy to make the zeta potential on the surface of the solder particle positive.
- the solder particles can be arranged on the electrodes even more efficiently.
- the weight average molecular weight indicates a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).
- the weight average molecular weight of the polymer obtained by surface-treating the solder particle body with a compound that becomes an anionic polymer is obtained by dissolving the solder in the solder particles and removing the solder particles with dilute hydrochloric acid or the like that does not cause decomposition of the polymer. It can be determined by measuring the weight average molecular weight of the remaining polymer.
- the solder is preferably a metal (low melting point metal) having a melting point of 450 ° C. or lower.
- the solder particles are preferably metal particles (low melting point metal particles) having a melting point of 450 ° C. or lower.
- the low melting point metal particles are particles containing a low melting point metal.
- the low melting point metal is a metal having a melting point of 450 ° C. or lower.
- the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower.
- the solder particles include tin.
- the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more.
- the content of tin in the solder particles is equal to or higher than the lower limit, the connection reliability between the solder portion and the electrode is further enhanced.
- the tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
- ICP-AES high-frequency inductively coupled plasma emission spectrometer
- EDX-800HS fluorescent X-ray analyzer
- solder particles By using the above solder particles, the solder is melted and joined to the electrodes, and the solder portion conducts between the electrodes. For example, since the solder portion and the electrode are not in point contact but in surface contact, the connection resistance is lowered. In addition, the use of solder particles increases the bonding strength between the solder portion and the electrode. As a result, peeling between the solder portion and the electrode is further less likely to occur, and the conduction reliability and the connection reliability are effectively increased.
- the metal (low melting point metal) constituting the solder particles is not particularly limited.
- the low melting point metal is preferably tin or an alloy containing tin.
- the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
- the low melting point metal is preferably tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, or a tin-indium alloy because of its excellent wettability with respect to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
- the solder particles are preferably a filler material having a liquidus line of 450 ° C. or lower based on JIS Z3001: Welding terms.
- the composition of the solder particles include metal compositions containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like. Of these, a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which is low-melting and lead-free is preferable. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium, or contain tin and bismuth.
- the solder particles include nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, chromium. Further, it may contain a metal such as molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder portion and the electrode, the solder particles preferably contain nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further increasing the bonding strength between the solder part and the electrode, the content of these metals for increasing the bonding strength is preferably 0.0001% by weight or more, preferably 1% by weight in 100% by weight of the solder particles. % Or less.
- the average particle size of the solder particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, still more preferably 3 ⁇ m or more, particularly preferably 5 ⁇ m or more, preferably 100 ⁇ m or less, more preferably less than 80 ⁇ m, still more preferably 75 ⁇ m.
- it is more preferably 60 ⁇ m or less, even more preferably 40 ⁇ m or less, still more preferably 30 ⁇ m or less, still more preferably 20 ⁇ m or less, particularly preferably 15 ⁇ m or less, and most preferably 10 ⁇ m or less.
- the average particle diameter of the solder particles is particularly preferably 3 ⁇ m or more and 30 ⁇ m or less.
- the average particle diameter” of the solder particles indicates the number average particle diameter.
- the average particle diameter of the solder particles is obtained, for example, by observing 50 arbitrary solder particles with an electron microscope or an optical microscope, calculating an average value, or performing laser diffraction particle size distribution measurement.
- the coefficient of variation of the particle diameter of the solder particles is preferably 5% or more, more preferably 10% or more, preferably 40% or less, more preferably 30% or less.
- the variation coefficient of the particle diameter is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently arranged on the electrode.
- the coefficient of variation of the particle diameter of the solder particles may be less than 5%.
- CV value (%) ( ⁇ / Dn) ⁇ 100 ⁇ : Standard deviation of particle diameter of solder particles Dn: Average value of particle diameter of solder particles
- the shape of the solder particles is not particularly limited.
- the solder particles may have a spherical shape or a shape other than a spherical shape such as a flat shape.
- the content of the solder particles in 100% by weight of the conductive paste is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, and most preferably 30%. % By weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.
- the content of the solder particles is not less than the above lower limit and not more than the above upper limit, it is possible to more efficiently arrange the solder particles on the electrodes, and it is easy to arrange many solder particles between the electrodes, The conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, it is preferable that the content of the solder particles is large.
- the content of the solder particles is preferably 100% by weight of the conductive paste from the viewpoint of further improving the conduction reliability. Is 20% by weight or more, more preferably 30% by weight or more, preferably 55% by weight or less, more preferably 45% by weight or less.
- the content of the solder particles is preferably 100% by weight of the conductive paste. Is 30% by weight or more, more preferably 40% by weight or more, preferably 70% by weight or less, more preferably 60% by weight or less.
- the content of the solder particles is preferably 100% by weight of the conductive paste from the viewpoint of further improving the conduction reliability. Is 30% by weight or more, more preferably 40% by weight or more, preferably 70% by weight or less, more preferably 60% by weight or less.
- thermosetting compound thermosetting component
- the thermosetting compound is a compound that can be cured by heating.
- the thermosetting compound include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
- an epoxy compound is preferable from the viewpoint of further improving the curability and viscosity of the conductive paste and further improving the connection reliability.
- the thermosetting compound is crystalline thermosetting. Containing sexual compounds.
- the said crystalline thermosetting compound only 1 type may be used and 2 or more types may be used together.
- the active compound is preferably solid at 25 ° C.
- the above crystalline thermosetting The melting point of the functional compound is preferably 80 ° C. or higher, more preferably 85 ° C. or higher, preferably 150 ° C. or lower, more preferably 140 ° C. or lower.
- the above crystalline thermosetting The molecular weight of the functional compound is preferably 300 or more, more preferably 350 or more, preferably 500 or less, more preferably 400 or less.
- the molecular weight means a molecular weight that can be calculated from the structural formula when the thermosetting compound is not a polymer and when the structural formula of the thermosetting compound can be specified. Moreover, when the said thermosetting compound is a polymer, a weight average molecular weight is meant.
- thermosetting compound examples include epoxy compounds and (meth) acrylic compounds.
- the above-mentioned epoxy compound includes an aromatic epoxy compound.
- crystalline epoxy compounds such as resorcinol type epoxy compounds, naphthalene type epoxy compounds, biphenyl type epoxy compounds, and benzophenone type epoxy compounds are preferable.
- 2,4-bis (glycidyloxy) benzophenone or 4,4′-bis (glycidyloxy) benzophenone is preferable.
- the above (meth) acrylic compound is a compound having a (meth) acryloyl group.
- examples of the (meth) acrylic compound include epoxy (meth) acrylate compounds.
- a compound in which a (meth) acryloyl group is introduced into the epoxy compound with (meth) acrylic acid or the like is preferable.
- the functional compound is particularly preferably a benzophenone type epoxy compound, and most preferably 2,4-bis (glycidyloxy) benzophenone or 4,4′-bis (glycidyloxy) benzophenone.
- the content of the thermosetting compound is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. Is 98% by weight or less, more preferably 90% by weight or less, and particularly preferably 80% by weight or less. From the viewpoint of further improving the impact resistance, it is preferable that the contents of the thermosetting component and the thermosetting compound are large.
- the content of the crystalline thermosetting compound is preferably 10% by weight or more, more preferably 30% by weight in the total 100% by weight of the thermosetting compound (other thermosetting compound and crystalline thermosetting compound). % Or more, more preferably 50% by weight or more, particularly preferably 70% by weight or more, and preferably 100% by weight or less.
- thermosetting agent thermosetting component
- the thermosetting agent thermosets the thermosetting compound.
- examples of the thermosetting agent include imidazole curing agents, amine curing agents, phenol curing agents, polythiol curing agents and other thiol curing agents, acid anhydrides, thermal cation initiators (thermal cation curing agents), and thermal radical generators. It is done. As for the said thermosetting agent, only 1 type may be used and 2 or more types may be used together.
- An imidazole curing agent, a thiol curing agent, or an amine curing agent is preferable because the conductive paste can be cured more rapidly at a low temperature. Moreover, since a storage stability becomes high when a thermosetting compound and the said thermosetting agent are mixed, a latent hardening agent is preferable.
- the latent curing agent is preferably a latent imidazole curing agent, a latent thiol curing agent, or a latent amine curing agent.
- the said thermosetting agent may be coat
- the imidazole curing agent is not particularly limited, and 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s- Examples include triazine isocyanuric acid adducts.
- the thiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis-3-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate. .
- the amine curing agent is not particularly limited, and hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5].
- examples include undecane, bis (4-aminocyclohexyl) methane, metaphenylenediamine, and diaminodiphenylsulfone.
- thermal cation initiator examples include iodonium cation curing agents, oxonium cation curing agents, and sulfonium cation curing agents.
- examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate.
- examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate.
- sulfonium-based cationic curing agent examples include tri-p-tolylsulfonium hexafluorophosphate.
- the thermal radical generator is not particularly limited, and examples thereof include azo compounds and organic peroxides.
- examples of the azo compound include azobisisobutyronitrile (AIBN).
- examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
- the reaction initiation temperature of the thermosetting agent is preferably 50 ° C or higher, more preferably 70 ° C or higher, still more preferably 80 ° C or higher, preferably 250 ° C or lower, more preferably 200 ° C or lower, still more preferably 150 ° C or lower, Especially preferably, it is 140 degrees C or less.
- the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder is more efficiently arranged on the electrode.
- the reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
- the reaction initiation temperature of the thermosetting agent is preferably higher than the melting point of the solder, more preferably 5 ° C or higher, more preferably 10 ° C or higher. More preferably.
- the reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
- the content of the thermosetting agent is not particularly limited.
- the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight with respect to 100 parts by weight of the thermosetting compound. Part or less, more preferably 75 parts by weight or less.
- the content of the thermosetting agent is at least the above lower limit, it is easy to sufficiently cure the conductive paste.
- the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
- the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight of the crystalline thermosetting compound. 100 parts by weight or less, more preferably 75 parts by weight or less. Further, the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, based on 100 parts by weight of the whole thermosetting compound. The amount is preferably 100 parts by weight or less, more preferably 75 parts by weight or less. When the content of the thermosetting agent is at least the above lower limit, it is easy to sufficiently cure the conductive paste. When the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
- the conductive paste preferably contains a flux.
- the flux is not particularly limited.
- a flux generally used for soldering or the like can be used.
- the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin.
- Etc As for the said flux, only 1 type may be used and 2 or more types may be used together.
- Examples of the molten salt include ammonium chloride.
- Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid.
- Examples of the pine resin include activated pine resin and non-activated pine resin.
- the flux is preferably an organic acid having two or more carboxyl groups, pine resin.
- the flux may be an organic acid having two or more carboxyl groups, or pine resin.
- the above rosins are rosins whose main component is abietic acid.
- the flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
- the active temperature (melting point) of the flux is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, further preferably 80 ° C. or higher, preferably 200 ° C. or lower, more preferably 190 ° C. or lower, even more preferably 160 ° C. or lower. More preferably, it is 150 ° C. or less, and still more preferably 140 ° C. or less.
- the active temperature (melting point) of the flux is preferably 80 ° C. or higher and 190 ° C. or lower.
- the activation temperature (melting point) of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
- the flux having an active temperature (melting point) of 80 ° C. or higher and 190 ° C. or lower includes succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point) 104 ° C.), dicarboxylic acids such as suberic acid (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), malic acid (melting point 130 ° C.) and the like.
- the boiling point of the flux is preferably 200 ° C. or lower.
- the melting point of the flux is preferably higher than the melting point of the solder, more preferably 5 ° C or higher, and even more preferably 10 ° C or higher. .
- the melting point of the flux is preferably higher than the reaction start temperature of the thermosetting agent, more preferably 5 ° C or higher, more preferably 10 ° C or higher. More preferably.
- the flux may be dispersed in the conductive paste or may be adhered on the surface of the solder particles.
- the flux is preferably a flux that releases cations by heating.
- a flux that releases cations upon heating the solder can be placed more efficiently on the electrode.
- the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less.
- the conductive paste may not contain a flux.
- the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
- a filler may be added to the conductive paste.
- the filler may be an organic filler or an inorganic filler. By adding the filler, the distance at which the solder particles aggregate can be suppressed, and the solder particles can be uniformly aggregated on all the electrodes of the substrate.
- the conductive paste preferably does not contain the filler or contains the filler at 5% by weight or less. Since a crystalline thermosetting compound is used, the smaller the filler content, the easier the solder moves on the electrode.
- the content of the filler is preferably 0% by weight (not contained) or more, preferably 5% by weight or less, more preferably 2% by weight or less, and still more preferably 1% by weight or less.
- the content of the filler is not less than the above lower limit and not more than the above upper limit, the solder particles are more efficiently arranged on the electrode.
- the conductive paste is, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant.
- various additives such as an antistatic agent and a flame retardant may be included.
- connection structure includes a first connection target member having at least one first electrode on the surface, a second connection target member having at least one second electrode on the surface, and the first The connection object member and the connection part which has connected the said 2nd connection object member are provided.
- the connection portion is formed of the conductive paste described above, and is a cured product of the conductive paste described above.
- the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.
- the manufacturing method of the connection structure according to the present invention includes the step of disposing the conductive paste on the surface of the first connection target member having at least one first electrode on the surface using the conductive paste described above.
- the second connection target member having at least one second electrode on the surface of the conductive paste opposite to the first connection target member side is provided with the first electrode and the second connection target.
- the conductive paste is heated above the curing temperature of the thermosetting compound.
- connection structure according to the present invention since a specific conductive paste is used, a plurality of solder particles are likely to gather between the first electrode and the second electrode.
- a plurality of solder particles can be efficiently arranged on the electrode (line).
- another method for efficiently collecting a plurality of solder particles between the electrodes may be further employed.
- a method for efficiently collecting a plurality of solder particles between electrodes when heat is applied to the conductive paste between the first connection target member and the second connection target member, the viscosity of the conductive paste by heat is applied.
- the method of generating the convection of the electrically conductive paste between a 1st connection object member and a 2nd connection object member etc. is mentioned because it falls.
- a method of generating convection due to a difference in heat capacity between the electrode on the surface of the connection target member and the other surface member, a method of generating convection as water vapor from the heat of the connection target member, and the first Examples include a method of generating convection due to a temperature difference between the connection target member and the second connection target member.
- a method of selectively aggregating solder particles on the surface of the electrode may be further employed.
- a method of selectively agglomerating solder particles on the surface of the electrode there is a connection target member formed by an electrode material having good wettability of molten solder particles and another surface material having poor wettability of molten solder particles.
- a method of selectively adhering molten solder particles that have reached the surface of the electrode to the electrode and then melting and adhering another solder particle to the molten solder particles, and an electrode material with good thermal conductivity And other surface materials with poor thermal conductivity are selected, and when heat is applied, the temperature of the electrode is raised relative to the other surface members to selectively
- the solder particles are selectively agglomerated on the electrodes by using solder particles that have been treated so as to have a positive charge with respect to the negative charges existing on the electrode formed of metal.
- the thickness of the solder part between the electrodes is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less.
- the solder wetted area on the surface of the electrode is preferably 50% or more, more preferably 60% or more, still more preferably 70% or more, preferably 100. % Or less.
- the step of arranging the second connection target member and the step of forming the connection portion no pressure is applied, and the second connection is applied to the conductive paste.
- the weight of the target member is added, or pressure is applied in at least one of the step of arranging the second connection target member and the step of forming the connection portion, and the second connection target member It is preferable that the pressure of pressurization is less than 1 MPa in both the step of disposing and the step of forming the connecting portion. By not applying a pressure of 1 MPa or more, the aggregation of solder particles is considerably promoted.
- the pressure of pressurization may be less than 1 MPa in both the step of performing pressure and arranging the second connection target member and the step of forming the connection portion.
- the pressurization may be performed only in the step of arranging the second connection target member, or the pressurization may be performed only in the step of forming the connection portion.
- Pressurization may be performed in both the step of arranging the connection target member and the step of forming the connection portion.
- the case where the pressure is less than 1 MPa includes the case where no pressure is applied.
- the pressure of pressurization is preferably 0.9 MPa or less, more preferably 0.8 MPa or less.
- the pressure of the pressurization is 0.8 MPa or less, the aggregation of the solder particles is further promoted more remarkably than when the pressure of the pressurization exceeds 0.8 MPa.
- connection structure in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the second connection is applied to the conductive paste.
- the weight of the target member is preferably added, and in the step of arranging the second connection target member and the step of forming the connection portion, the conductive paste exceeds the weight force of the second connection target member. It is preferable that no pressure is applied.
- the uniformity of the amount of solder can be further enhanced in the plurality of solder portions.
- the thickness of the solder portion can be increased more effectively, and a plurality of solder particles can be easily collected between the electrodes, and the plurality of solder particles can be arranged more efficiently on the electrodes (lines).
- the conduction reliability between the electrodes can be further enhanced.
- the electrical connection between the laterally adjacent electrodes that should not be connected can be further prevented, and the insulation reliability can be further improved.
- connection portion if no weight is applied and the weight of the second connection target member is added to the conductive paste, the connection portion
- the solder particles arranged in the region (space) where the electrode is not formed before the electrode is formed are more easily collected between the first electrode and the second electrode, so that the plurality of solder particles are separated from the electrode (line).
- the present inventor has also found that the above can be arranged more efficiently.
- a configuration in which a conductive paste is used instead of a conductive film and a configuration in which the weight of the second connection target member is added to the conductive paste without applying pressure are used in combination. This has a great meaning in order to obtain the effects of the present invention at a higher level.
- WO2008 / 023452A1 describes that it is preferable to pressurize with a predetermined pressure at the time of bonding from the viewpoint of efficiently moving the solder powder to the electrode surface, and the pressurizing pressure further ensures the solder area.
- the pressure is set to 0 MPa or more, preferably 1 MPa or more.
- a predetermined pressure may be applied to the adhesive tape by its own weight.
- WO2008 / 023452A1 it is described that the pressure applied intentionally to the adhesive tape may be 0 MPa, but there is no difference between the effect when the pressure exceeding 0 MPa is applied and when the pressure is set to 0 MPa. Not listed.
- WO2008 / 023452A1 recognizes nothing about the importance of using a paste-like conductive paste instead of a film.
- the conductive film in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is.
- the conductive film has a problem that the melt viscosity of the conductive film cannot be sufficiently lowered at the melting temperature of the solder, and the aggregation of the solder particles is hindered.
- FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive paste according to an embodiment of the present invention.
- connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3.
- Part 4 is formed by the conductive paste described above.
- the thermosetting compound containing a crystalline thermosetting compound, a thermosetting agent, and a plurality of solder particles are included.
- the thermosetting compound and the thermosetting agent are thermosetting components.
- the connecting portion 4 includes a solder portion 4A in which a plurality of solder particles are gathered and joined to each other, and a cured product portion 4B in which a thermosetting component is thermally cured.
- the first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface).
- the second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface).
- the first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A.
- no solder exists in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a.
- connection structure 1 a plurality of solder particles gather between the first electrode 2 a and the second electrode 3 a, and after the plurality of solder particles melt, After the electrode surface wets and spreads, it solidifies to form the solder portion 4A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. That is, by using the solder particles, the solder portion 4A, the first electrode 2a, and the solder portion are compared with the case where the conductive outer surface is made of a metal such as nickel, gold or copper. The contact area between 4A and the second electrode 3a increases. For this reason, the conduction
- the conductive paste may contain a flux. When the flux is used, the flux is generally deactivated gradually by heating.
- connection structure 1 shown in FIG. 1 all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a.
- the connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X.
- the connection part 4X has the solder part 4XA and the hardened
- most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area
- the solder part 4XA protruding laterally from the region where the first and second electrodes 2a and 3a are opposed is a part of the solder part 4XA and is not a solder separated from the solder part 4XA.
- the amount of solder away from the solder portion can be reduced, but the solder away from the solder portion may exist in the cured product portion.
- connection structure 1 If the amount of solder particles used is reduced, the connection structure 1 can be easily obtained. If the amount of the solder particles used is increased, it becomes easy to obtain the connection structure 1X.
- the portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode is seen.
- the solder portion in the connection portion is disposed at 90% or more.
- connection structure 1 using the conductive paste according to the embodiment of the present invention will be described.
- the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared.
- a conductive paste 11 including a thermosetting component 11B and a plurality of solder particles 11A is disposed on the surface of the first connection target member 2 (first Process).
- the conductive paste 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided.
- the solder particles 11A are disposed both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
- the arrangement method of the conductive paste 11 is not particularly limited, and examples thereof include application with a dispenser, screen printing, and ejection with an inkjet device.
- the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared.
- the 2nd connection object member 3 is arrange
- the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
- the conductive paste 11 is heated above the melting point of the solder particles 11A and above the curing temperature of the thermosetting component 11B (third step). That is, the conductive paste 11 is heated to a temperature lower than the melting point of the solder particles 11A and the curing temperature of the thermosetting component 11B. At the time of this heating, the solder particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect).
- the conductive paste since the conductive paste is used instead of the conductive film, the conductive paste further has a specific composition, so that the solder particles 11A are disposed between the first electrode 2a and the second electrode 3a. To gather effectively. Also, the solder particles 11A are melted and joined together.
- thermosetting component 11B is thermoset.
- the connection portion 4 connecting the first connection target member 2 and the second connection target member 3 is formed with the conductive paste 11.
- the connection part 4 is formed by the conductive paste 11
- the solder part 4A is formed by joining a plurality of solder particles 11A
- the cured part 4B is formed by thermosetting the thermosetting component 11B. If the solder particles 11A are sufficiently moved, the first electrode 2a and the second electrode are moved after the movement of the solder particles 11A not located between the first electrode 2a and the second electrode 3a starts. It is not necessary to keep the temperature constant until the movement of the solder particles 11A is completed.
- pressurization may be performed as long as the interval between the first electrode and the second electrode can be secured.
- a spacer corresponding to the desired gap between the electrodes may be added so that at least one, preferably three or more spacers are arranged between the electrodes.
- the spacer include inorganic particles and organic particles.
- the spacer is preferably an insulating particle.
- the electrode of the first connection target member Even when the first connection target member and the second connection target member are overlapped in a state where the alignment of the electrodes of the second connection target member is shifted, the shift is corrected and the first connection target member is corrected. Can be connected to the electrode of the second connection target member (self-alignment effect). This is because the molten solder self-aggregated between the electrode of the first connection target member and the electrode of the second connection target member is the electrode of the first connection target member and the electrode of the second connection target member.
- the area where the solder and the other components of the conductive paste are in contact with each other is minimized, the area becomes more stable in terms of energy. Because. At this time, it is desirable that the conductive paste is not cured and that the viscosity of components other than the solder particles of the conductive paste is sufficiently low at that temperature and time.
- the viscosity of the conductive paste at the melting point temperature of the solder is preferably 50 Pa ⁇ s or less, more preferably 10 Pa ⁇ s or less, still more preferably 1 Pa ⁇ s or less, preferably 0.1 Pa ⁇ s or more, more preferably 0.2 Pa. -It is more than s. If the viscosity is lower than the predetermined viscosity, the solder particles can be efficiently aggregated. If the viscosity is higher than the predetermined viscosity, the void at the connection portion is suppressed, and the protrusion of the conductive paste to other than the connection portion is suppressed. Can do.
- connection structure 1 shown in FIG. 1 is obtained.
- the second step and the third step may be performed continuously.
- the laminated body of the obtained 1st connection object member 2, the electrically conductive paste 11, and the 2nd connection object member 3 is moved to a heating part, and said 3rd said You may perform a process.
- the laminate In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
- a 1st connection object member or a 2nd connection object member can be peeled from a connection part for the purpose of correction of a position, or re-production.
- the heating temperature for performing this peeling is preferably not lower than the melting point of the solder particles, more preferably not lower than the melting point (° C.) of the solder particles + 10 ° C.
- the heating temperature for performing this peeling may be the melting point (° C.) of the solder particles + 100 ° C. or less.
- the heating temperature in the third step is not particularly limited as long as it is higher than the melting point of the solder particles and higher than the curing temperature of the thermosetting component.
- the heating temperature is preferably 140 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and still more preferably 200 ° C. or lower.
- a heating step may be provided in order to uniformize the aggregation of the solder particles before melting.
- the heating temperature in the heating step is preferably 60 ° C. or higher, more preferably 80 ° C. or higher, preferably 130 ° C. or lower, more preferably 120 ° C. or lower, preferably 5 seconds or longer, preferably 120 seconds or shorter. Hold.
- the thermosetting component is reduced in viscosity by heat, and the solder particles before melting are aggregated to form a network structure, and are left behind when the solder particles are melted and aggregated in the third step. Solder particles can be reduced.
- the melting point of the solder (° C.) or more preferably the melting point of the solder (° C.) + 5 ° C. or more, preferably the melting point of the solder (° C.) + 20 ° C. or less, more preferably the melting point of the solder (° C.).
- the temperature may be raised to the curing temperature of the thermosetting component.
- the rate of temperature increase in the third step is preferably 50 ° C./second or less, more preferably 20 ° C./second or less, further preferably 10 ° C./second or less, with respect to the temperature increase from 30 ° C. to the melting point of the solder particles. Is 1 ° C./second or more, more preferably 5 ° C./second or more.
- the rate of temperature rise is equal to or higher than the above lower limit, the aggregation of solder particles becomes even more uniform.
- the rate of temperature increase is equal to or less than the above upper limit, an excessive increase in viscosity due to the progress of curing of the thermosetting component is suppressed, and aggregation of solder particles is hardly inhibited.
- connection structure As the heating method in the third step, a method of heating the entire connection structure using a reflow furnace or an oven above the melting point of the solder particles and the curing temperature of the thermosetting component, or a connection structure The method of heating only the connection part of a body locally is mentioned.
- instruments used in the method of locally heating include a hot plate, a heat gun that applies hot air, a soldering iron, and an infrared heater.
- the metal directly under the connection is made of a metal with high thermal conductivity, and other places where heating is not preferred are made of a material with low thermal conductivity such as a fluororesin.
- the upper surface of the hot plate is preferably formed.
- the first and second connection target members are not particularly limited. Specifically as said 1st, 2nd connection object member, electronic components, such as a semiconductor chip, a semiconductor package, LED chip, LED package, a capacitor
- the first and second connection target members are preferably electronic components.
- At least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
- the second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for connection of such a connection object member, there exists a tendency for a solder particle not to gather on an electrode.
- the conductive reliability between the electrodes can be sufficiently improved by efficiently collecting the solder particles on the electrodes. it can.
- the reliability of conduction between electrodes by not applying pressure compared to the case of using other connection target members such as a semiconductor chip can be obtained more effectively.
- the electrode provided on the connection target member examples include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, a SUS electrode, and a tungsten electrode.
- the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode.
- the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode.
- the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
- the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
- the trivalent metal element include Sn, Al, and Ga.
- the first electrode and the second electrode are arranged in an area array or a peripheral.
- the effect of the present invention is more effectively exhibited when the electrodes are arranged on the surface of an area array or a peripheral.
- the area array is a structure in which electrodes are arranged in a grid pattern on the surface where the electrodes of the connection target members are arranged.
- the peripheral is a structure in which electrodes are arranged on the outer periphery of a connection target member.
- the solder particles only have to be aggregated along the direction perpendicular to the comb, whereas in the above structure, the surface on which the electrodes are arranged is uniform over the entire surface. Since it is necessary for the solder particles to agglomerate, the amount of solder tends to be non-uniform in the conventional method, whereas in the method of the present invention, the effects of the present invention are more effectively exhibited.
- Polymer A 100 parts by weight of bisphenol F (containing 4,4′-methylene bisphenol, 2,4′-methylene bisphenol and 2,2′-methylene bisphenol in a weight ratio of 2: 3: 1), 1,6-hexanediol
- the reaction product (Polymer A) is a hydroxyl group derived from bisphenol F, 1,6-hexanediol diglycidyl ether, bisphenol F type epoxy resin, and resorcinol type epoxy compound. It was confirmed that the structural unit bonded to the epoxy group in the main chain has an epoxy group at both ends.
- the weight average molecular weight of the reaction product (polymer A) obtained by GPC was 28,000, and the number average molecular weight was 8,000.
- Polymer B both ends epoxy group rigid skeleton phenoxy resin, “YX6900BH45” manufactured by Mitsubishi Chemical Corporation, weight average molecular weight 16000
- Thermosetting compound 1 2,4-bis (glycidyloxy) benzophenone (crystalline thermosetting compound, melting point 94 ° C., molecular weight 362)
- MEK methyl ethyl ketone
- n-butanol 3: 1 (weight ratio)
- DSC -Differential scanning calorimetry
- Thermosetting compound 2 4,4'-bis (glycidyloxy) benzophenone (crystalline thermosetting compound, melting point 132 ° C., molecular weight 362)
- MEK methyl ethyl ketone
- n-butanol 3: 1 (weight ratio)
- Obtained epoxy compound melting point by DSC of 135 ° C., epoxy equivalent of 176 g / eq. According to the mass spectrum, the molecular weight was 362, and the melt viscosity at 150 ° C. was 12 mPa ⁇ s.
- Thermosetting compound 3 1,6 hexanediol diglycidyl ether (“Epogouse HD” manufactured by Yokkaichi Synthesis Co., Ltd., liquid at 25 ° C., molecular weight 230)
- Thermosetting compound 4 Bisphenol F type epoxy compound, “EXA830CRP” manufactured by DIC
- Thermosetting agent 1 Pentaerythritol tetrakis (3-mercaptobutyrate), “Karenz MT PE1” manufactured by Showa Denko KK
- Latent epoxy thermosetting agent 1 T & K TOKA's “Fujicure 7000”
- Flux 1 Adipic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (activation temperature) 152 ° C.
- solder particles having anionic polymer 1 200 g of solder particle main body, 40 g of adipic acid, and 70 g of acetone are weighed in a three-necked flask, and then dehydration condensation between the hydroxyl group on the surface of the solder particle main body and the carboxyl group of adipic acid 0.3 g of dibutyltin oxide as a catalyst was added and reacted at 60 ° C. for 4 hours. Thereafter, the solder particles were collected by filtration.
- the collected solder particles, 50 g of adipic acid, 200 g of toluene, and 0.3 g of paratoluenesulfonic acid were weighed in a three-necked flask and reacted at 120 ° C. for 3 hours while evacuating and refluxing. . At this time, the reaction was carried out while removing water produced by dehydration condensation using a Dean-Stark extraction device.
- solder particles were collected by filtration, washed with hexane, and dried. Thereafter, the obtained solder particles were pulverized with a ball mill and then sieved to a predetermined CV value.
- Solder particles 4 200 g of SnBi solder particles (“DS-10” manufactured by Mitsui Kinzoku Co., Ltd., average particle diameter (median diameter) 12 ⁇ m), 10 g of a silane coupling agent having an isocyanate group (“KBE-9007” manufactured by Shin-Etsu Chemical Co., Ltd.), and 70 g of acetone. Weighed into a three-necked flask. While stirring at room temperature, 0.25 g of dibutyltin laurate, which is a reaction catalyst between the hydroxyl group and the isocyanate group on the surface of the solder particles, was added, and the mixture was heated at 60 ° C. for 30 minutes under stirring in a nitrogen atmosphere. Thereafter, 50 g of methanol was added, and the mixture was heated at 60 ° C. for 10 minutes under stirring in a nitrogen atmosphere.
- SnBi solder particles (“DS-10” manufactured by Mitsui Kinzoku Co., Ltd., average particle diameter (media
- the mixture was cooled to room temperature, the solder particles were filtered with filter paper, and the solvent was removed by vacuum drying at room temperature for 1 hour.
- ester group of monoethyl adipate was reacted with the silanol group derived from the silane coupling agent by a transesterification reaction to form a covalent bond.
- adipic acid was added and reacted at 60 ° C. for 1 hour to add adipic acid to the remaining ethyl ester group that had not reacted with the silanol group of monoethyl adipate.
- the solder particles are filtered with a filter paper, and the solder particles are washed with hexane on the filter paper, so that the residual adipine adhered to the surface of the solder particles by non-covalent bonding.
- the solvent was removed by vacuum drying at room temperature for 1 hour.
- the molecular weight of the polymer formed on the solder surface was 0.1N hydrochloric acid, the solder was dissolved, the polymer was recovered by filtration, and the weight average molecular weight was determined by GPC.
- solder particles 4 were obtained.
- the CV value was 20%
- the surface zeta potential was 0.9 mV
- the molecular weight Mw of the polymer constituting the surface was 9800.
- Solder particles 5 Other than using SnBi solder particles (Mitsui Kinzoku Co., Ltd., “DS-10”, average particle diameter (median diameter) 12 ⁇ m) instead of SnBi solder particles (Mitsui Kinzoku Co., Ltd., average particle diameter (median diameter) 30 ⁇ m). Produced solder particles 5 in the same manner as the solder particles 4. In the obtained solder particles 5, the CV value was 15%, the surface zeta potential was 1 mV, and the molecular weight Mw of the polymer constituting the surface was 9900.
- Solder particles 6 Other than using SnBi solder particles (Mitsui Kinzoku Co., Ltd., average particle size (median diameter) 50 ⁇ m) instead of SnBi solder particles (Mitsui Kinzoku “DS-10”, average particle size (median diameter) 12 ⁇ m) Produced solder particles 6 in the same manner as the solder particles 4.
- the CV value was 13%
- the surface zeta potential was 1.1 mV
- the molecular weight Mw of the polymer constituting the surface was 10,000.
- solder particles having the anion polymer 1 were put in 10 g of methanol and the resulting solder particles were uniformly dispersed by ultrasonic treatment to obtain a dispersion.
- the zeta potential was measured by electrophoretic measurement using this dispersion and “Delsamax PRO” manufactured by Beckman Coulter.
- the weight average molecular weight of the anionic polymer 1 on the surface of the solder particles was obtained by dissolving the solder using 0.1N hydrochloric acid, collecting the polymer by filtration, and determining by GPC.
- CV value of solder particles The CV value was measured with a laser diffraction particle size distribution analyzer (“LA-920” manufactured by Horiba, Ltd.).
- conductive particles 1 Production method of conductive particles 1: Divinylbenzene resin particles having an average particle diameter of 10 ⁇ m (“Micropearl SP-210” manufactured by Sekisui Chemical Co., Ltd.) were subjected to electroless nickel plating to form a base nickel plating layer having a thickness of 0.1 ⁇ m on the surface of the resin particles. Next, the resin particles on which the base nickel plating layer was formed were subjected to electrolytic copper plating to form a 1 ⁇ m thick copper layer. Furthermore, electrolytic plating was performed using an electrolytic plating solution containing tin and bismuth to form a solder layer having a thickness of 3 ⁇ m.
- Conductive particles 1 were prepared.
- Phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) (Examples 1 to 6, 8 and Comparative Example 2)
- Examples 1 to 6, 8 and Comparative Example 2 (1) Preparation of anisotropic conductive paste
- Table 1 The components shown in Table 1 below were blended in the blending amounts shown in Table 1 to obtain anisotropic conductive paste.
- Comparative Example 2 conductive particles whose central portion is not solder are used.
- Glass epoxy substrate having a copper electrode pattern (copper electrode thickness 12 ⁇ m) having an L / S of 50 ⁇ m / 50 ⁇ m and an electrode length of 3 mm on the upper surface (FR-4 substrate) (first connection target member) was prepared.
- the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (thickness of a copper electrode 12 micrometers) of L / S 50 micrometers / 50 micrometers and electrode length 3mm on the lower surface was prepared.
- the overlapping area of the glass epoxy substrate and the flexible printed circuit board was 1.5 cm ⁇ 3 mm, and the number of connected electrodes was 75 pairs.
- the anisotropic conductive paste immediately after production is applied by screen printing using a metal mask so that the thickness is 100 ⁇ m on the electrode of the glass epoxy substrate, and anisotropic conductive A paste layer was formed.
- the flexible printed circuit board was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other. At this time, no pressure was applied. The weight of the flexible printed board is added to the anisotropic conductive paste layer. Thereafter, while heating the anisotropic conductive paste layer to 190 ° C., the solder is melted, and the anisotropic conductive paste layer is cured at 190 ° C. for 10 seconds. Obtained.
- a flexible printed circuit board (second connection target member) having a L / S of 75 ⁇ m / 75 ⁇ m and an electrode length of 3 mm on the lower surface of a copper electrode pattern (copper electrode thickness 12 ⁇ m) was prepared.
- 2nd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
- Glass epoxy substrate having a copper electrode pattern (copper electrode thickness 12 ⁇ m) with L / S of 100 ⁇ m / 100 ⁇ m and electrode length of 3 mm on the upper surface (FR-4 substrate) (first connection target member) was prepared.
- the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (thickness of copper electrode 12 micrometers) of L / S of 100 micrometers / 100 micrometers and electrode length 3mm on the lower surface was prepared.
- 3rd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
- Example 7 First, second, and third connection structures were obtained in the same manner as in Example 1 except that a pressure of 1 MPa was applied during heating of the first conductive paste layer.
- the 1st, 2nd, 3rd connection structure was obtained like Example 1 except having used an anisotropic conductive film.
- Example 9 to 18 The components shown in Tables 3 and 4 below were blended in the blending amounts shown in Tables 3 and 4 to obtain anisotropic conductive pastes.
- thermosetting compounds 1 and 2 were heated to 140 ° C. and liquefied. This was cooled to 40 degreeC and the thermosetting agent 1 was added. Then, the thermosetting compound 3 which is another thermosetting compound was added, and it stirred with the planetary stirrer until it became uniform. Then, it left still at 10 degreeC for 5 hours, and the thermosetting compounds 1 and 2 were crystallized.
- thermosetting compounds 1 and 2 had the predetermined crystal sizes shown in Tables 2 and 3 below.
- the first, second and third connection structures were produced in the same manner as in Examples 1 to 6, 8 and Comparative Example 2.
- the anisotropic conductive paste was stored at 50 ° C. for 12 hours.
- the anisotropic conductive paste after storage the first, second and third connection structures were produced in the same manner as in Examples 1 to 6, 8 and Comparative Example 2.
- Viscosity Viscosity ( ⁇ 25) at 25 ° C. of the anisotropic conductive paste before storage using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.), 25 ° C. and 5 rpm It measured on each condition.
- Viscosity ( ⁇ 25 ′) / viscosity ( ⁇ 25) is 1 or more and less than 1.2
- Viscosity ( ⁇ 25 ′) / viscosity ( ⁇ 25) is 1.2 or more and less than 1.5
- Viscosity ( ⁇ 25 ′) / Viscosity ( ⁇ 25) is 1.5 or more and less than 2
- Viscosity ( ⁇ 25 ′) / Viscosity ( ⁇ 25) is 2 or more
- solder placement accuracy on electrode 1 In the obtained first, second, and third connection structures, a portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode is provided. When viewed, the ratio X of the area where the solder portion in the connection portion is arranged in the area of 100% of the portion where the first electrode and the second electrode face each other was evaluated.
- the solder placement accuracy 1 on the electrode was determined according to the following criteria.
- Ratio X is 70% or more ⁇ : Ratio X is 60% or more and less than 70% ⁇ : Ratio X is 50% or more and less than 60% X: Ratio X is less than 50%
- solder placement accuracy on electrode 2 In the obtained first, second, and third connection structures, the first electrode and the second electrode are opposed to each other in a direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode.
- the ratio Y of the solder part in the connecting part arranged in the part where the first electrode and the second electrode face each other in 100% of the solder part in the connecting part was evaluated. .
- the solder placement accuracy 2 on the electrode was determined according to the following criteria.
- Ratio Y is 99% or more ⁇ : Ratio Y is 90% or more and less than 99% ⁇ : Ratio Y is 70% or more and less than 90% X: Ratio Y is less than 70%
- ⁇ Average value of connection resistance is 10 7 ⁇ or more ⁇ : Average value of connection resistance is 10 6 ⁇ or more, less than 10 7 ⁇ ⁇ : Average value of connection resistance is 10 5 ⁇ or more, less than 10 6 ⁇ ⁇ : Connection The average resistance is less than 10 5 ⁇
- first electrode and the second electrode are stacked in the stacking direction of the first electrode, the connection portion, and the second electrode. Whether the center line of the first electrode and the center line of the second electrode were aligned when the portion facing the two electrodes was viewed, and the distance of the positional deviation were evaluated.
- the positional deviation between the upper and lower electrodes was determined according to the following criteria.
- Misalignment is less than 15 ⁇ m ⁇ : Misalignment is 15 ⁇ m or more and less than 25 ⁇ m ⁇ : Misalignment is 25 ⁇ m or more and less than 40 ⁇ m ⁇ : Misalignment is 40 ⁇ m or more
- the average aspect ratio and the average major axis of the crystalline thermosetting compound crystals in the anisotropic conductive pastes after storage of Examples 9, 10, and 16 were the same as those of the anisotropic conductive paste before storage. .
- the viscosity at 25 ° C. and 5 rpm of the anisotropic conductive paste after storage in Example 9 is 130 mPa ⁇ s
- the viscosity at 25 ° C. and 0.5 rpm is 450 mPa ⁇ s
- the viscosity of the conductive paste at 25 ° C. and 5 rpm is 160 mPa ⁇ s
- Example 16 The anisotropic conductive paste after storage of Example 16 has a viscosity at 25 ° C. and 5 rpm.
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Abstract
Description
本発明に係る導電ペーストは、熱硬化性成分として熱硬化性化合物及び熱硬化剤と、複数のはんだ粒子とを含む。本発明に係る導電ペーストでは、上記熱硬化性化合物が、結晶性熱硬化性化合物を含む。上記はんだ粒子は、中心部分及び導電性の外表面とのいずれもがはんだにより形成されている。上記はんだ粒子は、上記はんだ粒子の中心部分及び導電性の外表面とのいずれもがはんだである粒子である。
上記はんだ粒子は、はんだを導電性の外表面に有する。上記はんだ粒子では、中心部分及び導電性の外表面とのいずれもがはんだにより形成されている。上記はんだ粒子は、中心部分及び導電性の外表面とのいずれもがはんだである粒子である。
はんだ粒子0.05gを、メタノール10gに入れ、超音波処理等をすることで、均一に分散させて、分散液を得る。この分散液を用いて、かつBeckman Coulter社製「Delsamax PRO」を用いて、電気泳動測定法にて、ゼータ電位を測定することができる。
ρ:はんだ粒子の粒子径の標準偏差
Dn:はんだ粒子の粒子径の平均値
上記熱硬化性化合物は、加熱により硬化可能な化合物である。上記熱硬化性化合物としては、オキセタン化合物、エポキシ化合物、エピスルフィド化合物、(メタ)アクリル化合物、フェノール化合物、アミノ化合物、不飽和ポリエステル化合物、ポリウレタン化合物、シリコーン化合物及びポリイミド化合物等が挙げられる。なかでも、導電ペーストの硬化性及び粘度をより一層良好にし、接続信頼性をより一層高める観点から、エポキシ化合物が好ましい。
上記熱硬化剤は、上記熱硬化性化合物を熱硬化させる。上記熱硬化剤としては、イミダゾール硬化剤、アミン硬化剤、フェノール硬化剤、ポリチオール硬化剤などのチオール硬化剤、酸無水物、熱カチオン開始剤(熱カチオン硬化剤)及び熱ラジカル発生剤等が挙げられる。上記熱硬化剤は、1種のみが用いられてもよく、2種以上が併用されてもよい。
上記導電ペーストは、フラックスを含むことが好ましい。フラックスの使用により、はんだを電極上により一層効果的に配置することができる。該フラックスは特に限定されない。フラックスとして、はんだ接合等に一般的に用いられているフラックスを使用できる。上記フラックスとしては、例えば、塩化亜鉛、塩化亜鉛と無機ハロゲン化物との混合物、塩化亜鉛と無機酸との混合物、溶融塩、リン酸、リン酸の誘導体、有機ハロゲン化物、ヒドラジン、有機酸及び松脂等が挙げられる。上記フラックスは1種のみが用いられてもよく、2種以上が併用されてもよい。
上記導電ペーストには、フィラーを添加してもよい。フィラーは、有機フィラーであってもよく、無機フィラーであってもよい。フィラーの添加により、はんだ粒子の凝集する距離を抑制し、基板の全電極上に対して、はんだ粒子を均一に凝集させることができる。
上記導電ペーストは、必要に応じて、例えば、充填剤、増量剤、軟化剤、可塑剤、重合触媒、硬化触媒、着色剤、酸化防止剤、熱安定剤、光安定剤、紫外線吸収剤、滑剤、帯電防止剤及び難燃剤等の各種添加剤を含んでいてもよい。
本発明に係る接続構造体は、少なくとも1つの第1の電極を表面に有する第1の接続対象部材と、少なくとも1つの第2の電極を表面に有する第2の接続対象部材と、上記第1の接続対象部材と、上記第2の接続対象部材とを接続している接続部とを備える。本発明に係る接続構造体では、上記接続部が、上述した導電ペーストにより形成されており、上述した導電ペーストの硬化物である。本発明に係る接続構造体では、上記第1の電極と上記第2の電極とが、上記接続部中のはんだ部により電気的に接続されている。
ビスフェノールF(4,4’-メチレンビスフェノールと2,4’-メチレンビスフェノールと2,2’-メチレンビスフェノールとを重量比で2:3:1で含む)100重量部、1,6-ヘキサンジオールジグリシジルエーテル130重量部、ビスフェノールF型エポキシ樹脂(DIC社製「EPICLON EXA-830CRP」)5重量部、及びレゾルシノール型エポキシ化合物(ナガセケムテックス社製「EX-201」)10重量部を、3つ口フラスコに入れ、窒素フロー下にて、100℃で溶解させた。その後、水酸基とエポキシ基の付加反応触媒であるトリフェニルブチルホスホニウムブロミド0.15重量部を添加し、窒素フロー下にて、140℃で4時間、付加重合反応させることにより、反応物(ポリマーA)を得た。
3口フラスコに、2,4-ジヒドロキシベンゾフェノン27g、エピクロルヒドリン230g、n-ブタノール70g、及びテトラエチルベンジルアンモニウムクロライド1gを入れ、室温にて撹拌、溶解させた。その後、窒素雰囲気下、撹拌下にて、70℃に昇温し、減圧還流下、水酸化ナトリウム水溶液(濃度48重量%)45gを滴下した。滴下は、4時間かけて行った。その後、70℃にて、ディーンスターク管を用い、水分を除去しながら2時間反応させた。その後、減圧下で、未反応のエピクロルヒドリンを除去した。
装置;日立ハイテクサイエンス社製「X-DSC7000」、サンプル量;3mg、温度条件;10℃/min
3口フラスコに、4,4’-ジヒドロキシベンゾフェノン27g、エピクロルヒドリン230g、n-ブタノール70g、及びテトラエチルベンジルアンモニウムクロライド1gを入れ、室温にて撹拌、溶解させた。その後、窒素雰囲気下、撹拌下にて、70℃に昇温し、減圧還流下、水酸化ナトリウム水溶液(濃度48重量%)45gを滴下した。滴下は、4時間かけて行った。その後。70℃にて、ディーンスターク管を用い、水分を除去しながら2時間反応させた。その後、減圧下で、未反応のエピクロルヒドリンを除去した。
アニオンポリマー1を有するはんだ粒子:はんだ粒子本体200gと、アジピン酸40gと、アセトン70gとを3つ口フラスコに秤量し、次にはんだ粒子本体の表面の水酸基とアジピン酸のカルボキシル基との脱水縮合触媒であるジブチル錫オキサイド0.3gを添加し、60℃で4時間反応させた。その後、はんだ粒子をろ過することで回収した。
SnBiはんだ粒子(三井金属社製「DS-10」、平均粒子径(メディアン径)12μm)200g、イソシアネート基を有するシランカップリング剤(信越化学工業社製「KBE-9007」)10g、アセトン70gを3つ口フラスコに秤量した。室温で撹拌しながら、はんだ粒子表面の水酸基とイソシアネート基との反応触媒であるジブチルスズラウレート0.25gを添加し、撹拌下、窒素雰囲気下にて、60℃で30分加熱した。その後、メタノールを50g添加し、撹拌下、窒素雰囲気下にて、60℃で10分間加熱した。
SnBiはんだ粒子(三井金属社製「DS-10」、平均粒子径(メディアン径)12μm)の代わりに、SnBiはんだ粒子(三井金属社製、平均粒子径(メディアン径)30μm)を用いたこと以外は、はんだ粒子4と同様にしてはんだ粒子5を作製した。得られたはんだ粒子5では、CV値15%、表面のゼータ電位1mV、表面を構成しているポリマーの分子量Mw=9900であった。
SnBiはんだ粒子(三井金属社製「DS-10」、平均粒子径(メディアン径)12μm)の代わりに、SnBiはんだ粒子(三井金属社製、平均粒子径(メディアン径)50μm)を用いたこと以外は、はんだ粒子4と同様にしてはんだ粒子6を作製した。得られたはんだ粒子6では、CV値13%、表面のゼータ電位1.1mV、表面を構成しているポリマーの分子量Mw=10000であった。
また、得られたはんだ粒子を、アニオンポリマー1を有するはんだ粒子0.05gを、メタノール10gに入れ、超音波処理をすることで、均一に分散させて、分散液を得た。この分散液を用いて、かつBeckman Coulter社製「Delsamax PRO」を用いて、電気泳動測定法にて、ゼータ電位を測定した。
はんだ粒子の表面のアニオンポリマー1の重量平均分子量は、0.1Nの塩酸を用い、はんだを溶解した後、ポリマーをろ過により回収し、GPCにより求めた。
CV値を、レーザー回折式粒度分布測定装置(堀場製作所社製「LA-920」)にて、測定した。
平均粒子径10μmのジビニルベンゼン樹脂粒子(積水化学工業社製「ミクロパールSP-210」)を無電解ニッケルめっきし、樹脂粒子の表面上に厚さ0.1μmの下地ニッケルめっき層を形成した。次いで、下地ニッケルめっき層が形成された樹脂粒子を電解銅めっきし、厚さ1μmの銅層を形成した。更に、錫及びビスマスを含有する電解めっき液を用いて、電解めっきし、厚さ3μmのはんだ層を形成した。このようにして、樹脂粒子の表面上に厚み1μmの銅層が形成されており、該銅層の表面に厚み3μmのはんだ層(錫:ビスマス=43重量%:57重量%)が形成されている導電性粒子1を作製した。
(実施例1~6,8及び比較例2)
(1)異方性導電ペーストの作製
下記の表1に示す成分を下記の表1に示す配合量で配合して、異方性導電ペーストを得た。なお、比較例2では、中心部分がはんだではない導電性粒子を用いた。
L/Sが50μm/50μm、電極長さ3mmの銅電極パターン(銅電極の厚み12μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが50μm/50μm、電極長さ3mmの銅電極パターン(銅電極の厚み12μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。
L/Sが75μm/75μm、電極長さ3mmの銅電極パターン(銅電極の厚み12μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが75μm/75μm、電極長さ3mmの銅電極パターン(銅電極の厚み12μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。
L/Sが100μm/100μm、電極長さ3mmの銅電極パターン(銅電極の厚み12μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが100μm/100μm、電極長さ3mmの銅電極パターン(銅電極の厚み12μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。
第1の導電ペースト層の加熱時に1MPaの圧力を加えたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
(1)異方性導電ペーストの作製
下記の表1に示す成分を下記の表1に示す配合量で配合して、異方性導電ペーストを得た。得られた異方性導電ペーストを用いたこと、加熱時に1MPaの圧力を加えたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
フェノキシ樹脂(新日鉄住金化学社製「YP-50S」)10重量部をメチルエチルケトン(MEK)に固形分が50重量%となるように溶解させて、溶解液を得た。下記の表1に示すフェノキシ樹脂を除く成分を下記の表1に示す配合量と、上記溶解液の全量とを配合して、遊星式攪拌機を用いて2000rpmで5分間攪拌した後、バーコーターを用いて乾燥後の厚みが30μmになるよう離型PET(ポリエチレンテレフタレート)フィルム上に塗工した。室温で真空乾燥することで、MEKを除去することにより、異方性導電フィルムを得た。
下記の表3,4に示す成分を下記の表3,4に示す配合量で配合して、異方性導電ペーストを得た。
(0)結晶性熱硬化性化合物の結晶の平均アスペクト比及び平均長径
保管前の異方性導電ペーストを電子顕微鏡で観察することにより、結晶性熱硬化性化合物の結晶の平均アスペクト比及び平均長径を評価した。
保管前の異方性導電ペーストの25℃での粘度(η25)を、E型粘度計(東機産業社製)を用いて、25℃及び5rpmと、25℃及び0.5rpmとの各条件で測定した。
異方性導電ペーストを50℃で24時間保管した。保管後の異方性導電ペーストの25℃での粘度(η25’)を、E型粘度計(東機産業社製)を用いて、25℃及び5rpmの条件で測定した。保存安定性を以下の基準で判定した。
○○:粘度(η25’)/粘度(η25)が1以上、1.2未満
○:粘度(η25’)/粘度(η25)が1.2以上、1.5未満
△:粘度(η25’)/粘度(η25)が1.5以上、2未満
×:粘度(η25’)/粘度(η25)が2以上
保管前の異方性導電ペーストを用いて得られた第1の接続構造体を断面観察することにより、上下の電極の間に位置しているはんだ部の厚みを評価した。
得られた第1,第2,第3の接続構造体において、第1の電極と接続部と第2の電極との積層方向に第1の電極と第2の電極との対向し合う部分をみたときに、第1の電極と第2の電極との対向し合う部分の面積100%中の、接続部中のはんだ部が配置されている面積の割合Xを評価した。電極上のはんだの配置精度1を下記の基準で判定した。
○○:割合Xが70%以上
○:割合Xが60%以上、70%未満
△:割合Xが50%以上、60%未満
×:割合Xが50%未満
得られた第1,第2,第3の接続構造体において、第1の電極と接続部と第2の電極との積層方向と直交する方向に第1の電極と第2の電極との対向し合う部分をみたときに、接続部中のはんだ部100%中、第1の電極と第2の電極との対向し合う部分に配置されている接続部中のはんだ部の割合Yを評価した。電極上のはんだの配置精度2を下記の基準で判定した。
○○:割合Yが99%以上
○:割合Yが90%以上、99%未満
△:割合Yが70%以上、90%未満
×:割合Yが70%未満
得られた第1,第2,第3の接続構造体(n=15個)において、上下の電極間の1接続箇所当たりの接続抵抗をそれぞれ、4端子法により、測定した。接続抵抗の平均値を算出した。なお、電圧=電流×抵抗の関係から、一定の電流を流した時の電圧を測定することにより接続抵抗を求めることができる。導通信頼性を下記の基準で判定した。
○○:接続抵抗の平均値が50mΩ以下
○:接続抵抗の平均値が50mΩを超え、70mΩ以下
△:接続抵抗の平均値が70mΩを超え、100mΩ以下
×:接続抵抗の平均値が100mΩを超える、又は接続不良が生じている
得られた第1,第2,第3の接続構造体(n=15個)において、85℃、湿度85%の雰囲気中に100時間放置後、横方向に隣接する電極間に、5Vを印加し、抵抗値を25箇所で測定した。絶縁信頼性を下記の基準で判定した。
○○:接続抵抗の平均値が107Ω以上
○:接続抵抗の平均値が106Ω以上、107Ω未満
△:接続抵抗の平均値が105Ω以上、106Ω未満
×:接続抵抗の平均値が105Ω未満
得られた第1,第2,第3の接続構造体において、第1の電極と接続部と第2の電極との積層方向に第1の電極と第2の電極との対向し合う部分をみたときに、第1の電極の中心線と第2の電極の中心線とが揃っているか否か、並びに位置ずれの距離を評価した。上下の電極間の位置ずれを下記の基準で判定した。
○○:位置ずれが15μm未満
○:位置ずれが15μm以上、25μm未満
△:位置ずれが25μm以上、40μm未満
×:位置ずれが40μm以上
2…第1の接続対象部材
2a…第1の電極
3…第2の接続対象部材
3a…第2の電極
4,4X…接続部
4A,4XA…はんだ部
4B,4XB…硬化物部
11…導電ペースト
11A…はんだ粒子
11B…熱硬化性成分
Claims (26)
- 熱硬化性成分として熱硬化性化合物及び熱硬化剤と、複数のはんだ粒子とを含み、
前記熱硬化性化合物が、結晶性熱硬化性化合物を含み、
前記はんだ粒子は、中心部分及び導電性の外表面とのいずれもがはんだである粒子である、導電ペースト。 - 前記結晶性熱硬化性化合物が25℃で固体である、請求項1に記載の導電ペースト。
- 前記結晶性熱硬化性化合物の融点が80℃以上、150℃以下である、請求項1又は2に記載の導電ペースト。
- 前記結晶性熱硬化性化合物の分子量が300以上、500以下である、請求項1~3のいずれか1項に記載の導電ペースト。
- 前記結晶性熱硬化性化合物は、ベンゾフェノン型エポキシ化合物である、請求項1~4のいずれか1項に記載の導電ペースト。
- 前記結晶性熱硬化性化合物の結晶の平均アスペクト比が5以下である、請求項1~5のいずれか1項に記載の導電ペースト。
- 前記結晶性熱硬化性化合物の結晶の平均長径が、前記はんだ粒子の平均粒子径の1/1.5以下である、請求項1~6のいずれか1項に記載の導電ペースト。
- 前記結晶性熱硬化性化合物の結晶の平均長径が、前記はんだ粒子の平均粒子径の1/10以上である、請求項1~7のいずれか1項に記載の導電ペースト。
- 前記結晶性熱硬化性化合物の融点は、前記はんだの融点よりも低い、請求項1~8のいずれか1項に記載の導電ペースト。
- フラックスを含み、
前記結晶性熱硬化性化合物の融点は、前記フラックスの活性温度よりも低い、請求項1~9のいずれか1項に記載の導電ペースト。 - 前記熱硬化性化合物の全体100重量%中、前記結晶性熱硬化性化合物の含有量が10重量%以上である、請求項1~10のいずれか1項に記載の導電ペースト。
- フィラーを含まないか、又はフィラーを5重量%以下で含む、請求項1~11のいずれか1項に記載の導電ペースト。
- 導電ペースト中で、前記結晶性熱硬化性化合物が、粒子状に分散している、請求項1~12のいずれか1項に記載の導電ペースト。
- 結晶性熱硬化性化合物とは異なる他の熱硬化性化合物を含む、請求項1~13のいずれか1項に記載の導電ペースト。
- 前記はんだ粒子の平均粒子径が1μm以上、60μm以下である、請求項1~14のいずれか1項に記載の導電ペースト。
- 前記はんだ粒子の含有量が10重量%以上、80重量%以下である、請求項1~15のいずれか1項に記載の導電ペースト。
- 少なくとも1つの第1の電極を表面に有する第1の接続対象部材と、
少なくとも1つの第2の電極を表面に有する第2の接続対象部材と、
前記第1の接続対象部材と、前記第2の接続対象部材とを接続している接続部とを備え、
前記接続部が、請求項1~16のいずれか1項に記載の導電ペーストの硬化物であり、
前記第1の電極と前記第2の電極とが、前記接続部中のはんだ部により電気的に接続されている、接続構造体。 - 前記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板である、請求項17に記載の接続構造体。
- 前記第1の電極と前記接続部と前記第2の電極との積層方向に前記第1の電極と前記第2の電極との対向し合う部分をみたときに、前記第1の電極と前記第2の電極との対向し合う部分の面積100%中の50%以上に、前記接続部中のはんだ部が配置されている、請求項17又は18に記載の接続構造体。
- 前記第1の電極と前記接続部と前記第2の電極との積層方向と直交する方向に前記第1の電極と前記第2の電極との対向し合う部分をみたときに、前記第1の電極と前記第2の電極との対向し合う部分に、前記接続部中のはんだ部の70%以上が配置されている、請求項17~19のいずれか1項に記載の接続構造体。
- 請求項1~16のいずれか1項に記載の導電ペーストを用いて、少なくとも1つの第1の電極を表面に有する第1の接続対象部材の表面上に、前記導電ペーストを配置する工程と、
前記導電ペーストの前記第1の接続対象部材側とは反対の表面上に、少なくとも1つの第2の電極を表面に有する第2の接続対象部材を、前記第1の電極と前記第2の電極とが対向するように配置する工程と、
前記はんだ粒子の融点以上かつ前記熱硬化性成分の硬化温度以上に前記導電ペーストを加熱することで、前記第1の接続対象部材と前記第2の接続対象部材とを接続している接続部を、前記導電ペーストにより形成し、かつ、前記第1の電極と前記第2の電極とを、前記接続部中のはんだ部により電気的に接続する工程とを備える、接続構造体の製造方法。 - 前記第2の接続対象部材を配置する工程及び前記接続部を形成する工程において、加圧を行わず、前記導電ペーストには、前記第2の接続対象部材の重量が加わるか、又は、
前記第2の接続対象部材を配置する工程及び前記接続部を形成する工程の内の少なくとも一方において、加圧を行い、かつ、前記第2の接続対象部材を配置する工程及び前記接続部を形成する工程の双方において、加圧の圧力が1MPa未満である、請求項21に記載の接続構造体の製造方法。 - 前記第2の接続対象部材を配置する工程及び前記接続部を形成する工程において、加圧を行わず、前記導電ペーストには、前記第2の接続対象部材の重量が加わる、請求項22に記載の接続構造体の製造方法。
- 前記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板である、請求項21~23のいずれか1項に記載の接続構造体の製造方法。
- 前記第1の電極と前記接続部と前記第2の電極との積層方向に前記第1の電極と前記第2の電極との対向し合う部分をみたときに、前記第1の電極と前記第2の電極との対向し合う部分の面積100%中の50%以上に、前記接続部中のはんだ部が配置されている接続構造体を得る、請求項21~24のいずれか1項に記載の接続構造体の製造方法。
- 前記第1の電極と前記接続部と前記第2の電極との積層方向と直交する方向に前記第1の電極と前記第2の電極との対向し合う部分をみたときに、前記第1の電極と前記第2の電極との対向し合う部分に、前記接続部中のはんだ部の70%以上が配置されている接続構造体を得る、請求項21~25のいずれか1項に記載の接続構造体の製造方法。
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JP2018056277A (ja) * | 2016-09-28 | 2018-04-05 | エルジー ディスプレイ カンパニー リミテッド | 電子部品の実装方法、電子部品の接合構造、基板装置、ディスプレイ装置、ディスプレイシステム |
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JPWO2018061374A1 (ja) * | 2016-09-30 | 2019-08-29 | 積水化成品工業株式会社 | 導電性樹脂粒子及びその用途 |
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JP6517754B2 (ja) * | 2016-07-12 | 2019-05-22 | 日本碍子株式会社 | 配線基板接合体 |
JP7184759B2 (ja) * | 2017-12-22 | 2022-12-06 | 積水化学工業株式会社 | 導電材料、導電材料の保管方法、導電材料の製造方法及び接続構造体の製造方法 |
JPWO2020251043A1 (ja) * | 2019-06-13 | 2020-12-17 | ||
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Also Published As
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CN106463200A (zh) | 2017-02-22 |
JP6577867B2 (ja) | 2019-09-18 |
KR102411356B1 (ko) | 2022-06-22 |
TWI676183B (zh) | 2019-11-01 |
TW201616519A (zh) | 2016-05-01 |
JPWO2016043265A1 (ja) | 2017-07-06 |
CN106463200B (zh) | 2019-05-31 |
KR20170058884A (ko) | 2017-05-29 |
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