JP3964911B2 - バンプ付き基板の製造方法 - Google Patents
バンプ付き基板の製造方法 Download PDFInfo
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- JP3964911B2 JP3964911B2 JP2005091336A JP2005091336A JP3964911B2 JP 3964911 B2 JP3964911 B2 JP 3964911B2 JP 2005091336 A JP2005091336 A JP 2005091336A JP 2005091336 A JP2005091336 A JP 2005091336A JP 3964911 B2 JP3964911 B2 JP 3964911B2
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- Prior art keywords
- substrate
- resin
- solder powder
- solder
- manufacturing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 172
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 271
- 239000000843 powder Substances 0.000 claims description 185
- 229920005989 resin Polymers 0.000 claims description 172
- 239000011347 resin Substances 0.000 claims description 172
- 238000000034 method Methods 0.000 claims description 95
- 239000000654 additive Substances 0.000 claims description 92
- 230000000996 additive effect Effects 0.000 claims description 90
- 238000010438 heat treatment Methods 0.000 claims description 44
- 238000009835 boiling Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 238000002844 melting Methods 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 17
- 239000000155 melt Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 229920005992 thermoplastic resin Polymers 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 230000004907 flux Effects 0.000 description 26
- 230000033001 locomotion Effects 0.000 description 24
- 230000008569 process Effects 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000011342 resin composition Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 15
- 239000002904 solvent Substances 0.000 description 14
- 239000011295 pitch Substances 0.000 description 11
- 238000001723 curing Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000001338 self-assembly Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004156 Azodicarbonamide Substances 0.000 description 1
- 229910017770 Cu—Ag Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- XOZUGNYVDXMRKW-AATRIKPKSA-N azodicarbonamide Chemical compound NC(=O)\N=N\C(N)=O XOZUGNYVDXMRKW-AATRIKPKSA-N 0.000 description 1
- 235000019399 azodicarbonamide Nutrition 0.000 description 1
- QBLDFAIABQKINO-UHFFFAOYSA-N barium borate Chemical compound [Ba+2].[O-]B=O.[O-]B=O QBLDFAIABQKINO-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000006224 matting agent Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0612—Layout
- H01L2224/0613—Square or rectangular array
- H01L2224/06131—Square or rectangular array being uniform, i.e. having a uniform pitch across the array
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/11003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/11005—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for aligning the bump connector, e.g. marks, spacers
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/11—Manufacturing methods
- H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/1152—Self-assembly, e.g. self-agglomeration of the bump material in a fluid
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
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- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Description
複数の電極が形成された基板を用意する工程と、
前記基板上に、はんだ粉及び対流添加剤を含有する樹脂を供給する工程と、
前記基板を前記はんだ粉が溶融する温度に加熱する工程と
を含む。前記加熱工程では、前記溶融したはんだ粉が前記電極上に自己集合し、それによって、前記電極上にバンプが形成される。尚、基板に供給する樹脂は、はんだ粉及び対流添加剤を含んで成る樹脂組成物であり、樹脂組成物を基板上に塗布して樹脂組成物を薄膜の形態で基板上に供給するのが好ましい。
また、上記溶剤はフラックス中に含まれていても対流添加剤としての効果が得られる。還元性材料および溶剤を含むフラックス等を使用する場合は、溶剤からだけではなく、導体パターン、導電粒子等の金属の酸化物の還元反応によって酸素の気泡が発生することがある。この場合、その気泡も対流添加剤の効果を発揮できるのでより好ましい。また、基板に含まれている水分も対流添加剤として作用し得る。
尚、フラックスを用いる場合には、その中に一般的に含まれている樹脂、活性剤、艶消し剤等を、本発明の方法に用いる樹脂は含んでよい。従って、本発明において、樹脂は、溶剤およびフラックスに含まれている溶剤以外の他の成分を含んでよい、即ち、樹脂はフラックスを含んでよい。
また、供給する樹脂(即ち、樹脂組成物)は、1つの実施形態において、その全体基準で、前記対流添加剤を、例えば0.1〜20重量%体積%、好ましくは1〜10重量%体積%の割合で含有している。尚、体積%は、室温(25℃)における体積を基準とする。尚、樹脂は、必要に応じて、他の成分、例えば上述のフラックスに含まれている成分等を必要量含んでよい。
樹脂:エポキシ樹脂
はんだ粉:SnAgCu(融点:220℃)
樹脂とはんだ粉の割合:50重量%:50重量%
プリント基板:松下電子部品(株)製ALIVH
(電極の直径およびピッチ:直径300μm、ピッチ500μm)
基板の加熱温度:250℃
対流添加剤:フラックスとして添加(沸点:170℃)
樹脂とはんだ粉とフラックスの割合:45重量%:50重量%:5重量%
他の条件は、図16の場合と同じ。
図1(a)〜(e)は、本発明の実施形態1におけるバンプ形成方法の基本的な工程を示した図である。
VA:VB≒SA:SB ・・・(1)
式(1)中、SAは基板10上の電極11の総面積、SBは基板10の面積をそれぞれ表す。
(はんだ粉の含有量、体積%)=VA/VB=SA/SB×100 ・・・(2)
(はんだ粉の含有量、体積%)=(SA/SB×100)+α ・・・(3)
式(3)中、αは、はんだ粉が基板10の電極11上に自己集合する際の過不足分を調整するためのパラメータで、種々の条件により決めることができ、最適な場合、αはゼロである。
図5に示した配置(エリアアレイ配置)・・・15〜30%体積%
このように、はんだ粉の含有量を少ない量に押さえることができるのは、樹脂13中に分散する対流添加剤の樹脂13中での対流によって奏される作用効果によるものに他ならない。なお、一般に、はんだ粉と樹脂または対流添加剤との重量比は約7程度なので、上記0.5〜30体積%の割合は、概ね3〜75重量%の割合に相当する。
以下に、上述した実施形態1に対する種々の改変例に係る実施形態2について、図面を参照しながら説明をする。
1)配線基板の電極上にはんだバンプを形成する工程、
2)半導体チップを配線基板上に搭載し、はんだリフローによりバンプを介して電極間の接合を行なう工程、
3)配線基板と半導体チップ間にアンダーフィル材を注入して、半導体チップを固定する工程、
の3つの異なる工程を要する。
11、21 電極
12 対流添加剤
13 樹脂
14 平板
15、32、71 はんだ球
16 バンプ
20、70 半導体チップ
21 電極
22 アンダーフィル材
30 金属パターン
31 蒸気
35 対流の様子
60 金属膜
61 膜
71 電極端子
Claims (16)
- 複数の電極を有する基板上に、はんだ粉と沸点を有する添加剤とを含有する樹脂を供給する工程と、
前記基板上に供給された前記樹脂の表面に平板を当接させる工程と、
前記添加剤の沸点および前記はんだ粉が溶融する温度以上で前記樹脂を加熱し、前記添加剤を沸騰させて前記樹脂中に気泡を発生させ、前記気泡が前記樹脂中を対流することによって前記電極上に前記はんだ粉を集合させ、前記電極上にバンプを形成する工程と、
前記平板を除去する工程と、
を含む、バンプ付き基板の製造方法。 - 前記添加剤の沸点は、前記はんだ粉の融点よりも高いことを特徴とする、請求項1に記載のバンプ付き基板の製造方法。
- 前記添加剤の沸点は、前記はんだ粉の融点よりも低いことを特徴とする、請求項1に記載のバンプ付き基板の製造方法。
- 前記はんだ粉は、溶融状態で前記樹脂中を対流することを特徴とする、請求項1〜3のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記添加剤は、グリセリン、イソプロピルアルコール、酢酸ブチル、ブチルカルビトールおよびエチレングリコールよりなる群から選ばれた1種もしくは2種以上からなることを特徴とする、請求項1〜4のいずれか一つ記載のバンプ付き基板の製造方法。
- 前記はんだ粉は、略同一の粒径を有していることを特徴とする、請求項1〜5のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記平板に一定の圧力を加えることによって、前記樹脂を押圧しながら、前記樹脂を加熱することを特徴とする、請求項1〜6のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記気泡は、前記基板と前記平板との間に設けられた隙間の周辺部から、外部に蒸発することを特徴とする、請求項1〜7のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記平板の前記基板に対向する平面上に、前記基板に形成された複数の電極と対向する位置に、前記電極と略同一形状の金属パタ−ンが形成されていることを特徴とする、請求項1〜8のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記バンプが溶融した状態で、前記平板を除去し、前記電極上に、前記電極と前記平板との間に設けられた隙間の間隔よりも高いバンプを形成することを特徴とする、請求項1〜9のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記バンプを形成する工程の後、前記基板を冷却し、前記基板の冷却後、前記樹脂表面に当接されている平板を、前記樹脂表面から離間させることを特徴とする、請求項1〜9のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記平板を除去する工程の後、前記基板を冷却する工程を更に含み、前記基板の冷却後、前記樹脂を除去する工程を含むことを特徴とする、請求項1〜10のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記はんだ粉は、鉛フリーはんだ材料からなることを特徴とする、請求項1〜12のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記はんだ粉は、0.5〜30体積%の割合で、前記樹脂中に含有されていることを特徴とする、請求項1〜13のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記基板が、配線基板または半導体チップであることを特徴とする、請求項1〜14のいずれか一つに記載のバンプ付き基板の製造方法。
- 前記樹脂は、熱硬化性樹脂、熱可塑性樹脂、または光硬化性樹脂のいずれか一つを主成分とすることを特徴とする、請求項1〜15のいずれか一つに記載のバンプ付き基板の製造方法。
Priority Applications (5)
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JP2005091336A JP3964911B2 (ja) | 2004-09-03 | 2005-03-28 | バンプ付き基板の製造方法 |
EP05776918A EP1796155A4 (en) | 2004-09-03 | 2005-08-30 | PAMPERING PROCESSES AND LOTBEULE |
US11/661,821 US7799607B2 (en) | 2004-09-03 | 2005-08-30 | Process for forming bumps and solder bump |
PCT/JP2005/015765 WO2006025387A1 (ja) | 2004-09-03 | 2005-08-30 | バンプ形成方法及びはんだバンプ |
KR1020077004833A KR101139050B1 (ko) | 2004-09-03 | 2005-08-30 | 범프 형성 방법 및 땜납 범프 |
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EP (1) | EP1796155A4 (ja) |
JP (1) | JP3964911B2 (ja) |
KR (1) | KR101139050B1 (ja) |
WO (1) | WO2006025387A1 (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20140084095A (ko) | 2011-10-26 | 2014-07-04 | 히타치가세이가부시끼가이샤 | 리플로우 필름, 땜납 범프 형성 방법, 땜납 접합의 형성 방법 및 반도체 장치 |
US9656353B2 (en) | 2011-10-26 | 2017-05-23 | Hitachi Chemical Company, Ltd. | Reflow film, solder bump formation method, solder joint formation method, and semiconductor device |
JP2013224362A (ja) * | 2012-04-20 | 2013-10-31 | Nitto Denko Corp | 接合シート、電子部品およびそれらの製造方法 |
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KR20070048219A (ko) | 2007-05-08 |
EP1796155A4 (en) | 2009-09-16 |
JP2006100775A (ja) | 2006-04-13 |
KR101139050B1 (ko) | 2012-04-30 |
EP1796155A1 (en) | 2007-06-13 |
US7799607B2 (en) | 2010-09-21 |
US20070257362A1 (en) | 2007-11-08 |
WO2006025387A1 (ja) | 2006-03-09 |
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