CN1273993C - 导电粘结结构,含该结构的制品及其制造方法 - Google Patents
导电粘结结构,含该结构的制品及其制造方法 Download PDFInfo
- Publication number
- CN1273993C CN1273993C CNB998019291A CN99801929A CN1273993C CN 1273993 C CN1273993 C CN 1273993C CN B998019291 A CNB998019291 A CN B998019291A CN 99801929 A CN99801929 A CN 99801929A CN 1273993 C CN1273993 C CN 1273993C
- Authority
- CN
- China
- Prior art keywords
- conductive
- particle
- resin
- conductive particle
- foaming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000919 ceramic Substances 0.000 title claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 159
- 229920005989 resin Polymers 0.000 claims abstract description 74
- 239000011347 resin Substances 0.000 claims abstract description 74
- 238000005187 foaming Methods 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000000853 adhesive Substances 0.000 claims description 92
- 230000001070 adhesive effect Effects 0.000 claims description 92
- 239000000843 powder Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 239000004332 silver Substances 0.000 claims description 26
- 229910052709 silver Inorganic materials 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 23
- 239000003094 microcapsule Substances 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- 230000006837 decompression Effects 0.000 claims description 16
- 238000011049 filling Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000009835 boiling Methods 0.000 claims description 11
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229930195733 hydrocarbon Natural products 0.000 claims description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 239000011889 copper foil Substances 0.000 claims description 10
- 239000013528 metallic particle Substances 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 239000011135 tin Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000011133 lead Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000004760 aramid Substances 0.000 claims description 4
- 229920003235 aromatic polyamide Polymers 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 2
- 239000004604 Blowing Agent Substances 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910000846 In alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 206010000269 abscess Diseases 0.000 claims 4
- 208000002925 dental caries Diseases 0.000 claims 4
- 238000000605 extraction Methods 0.000 claims 2
- 238000003825 pressing Methods 0.000 claims 2
- 239000002759 woven fabric Substances 0.000 claims 2
- 229910001316 Ag alloy Inorganic materials 0.000 claims 1
- 229910000978 Pb alloy Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000011230 binding agent Substances 0.000 description 75
- 239000010410 layer Substances 0.000 description 29
- 239000012790 adhesive layer Substances 0.000 description 25
- 230000014509 gene expression Effects 0.000 description 22
- 238000001723 curing Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 19
- 239000006260 foam Substances 0.000 description 18
- 239000000306 component Substances 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 14
- 238000005452 bending Methods 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 11
- 239000002002 slurry Substances 0.000 description 11
- 239000007784 solid electrolyte Substances 0.000 description 11
- 239000003985 ceramic capacitor Substances 0.000 description 10
- 239000004215 Carbon black (E152) Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 230000002180 anti-stress Effects 0.000 description 8
- 238000007639 printing Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000004898 kneading Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 238000013007 heat curing Methods 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 3
- 210000000988 bone and bone Anatomy 0.000 description 3
- 239000001273 butane Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 2
- 241000723346 Cinnamomum camphora Species 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229960000846 camphor Drugs 0.000 description 2
- 229930008380 camphor Natural products 0.000 description 2
- ULDHMXUKGWMISQ-UHFFFAOYSA-N carvone Chemical compound CC(=C)C1CC=C(C)C(=O)C1 ULDHMXUKGWMISQ-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 239000005033 polyvinylidene chloride Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- ULDHMXUKGWMISQ-VIFPVBQESA-N (S)-(+)-Carvone Natural products CC(=C)[C@H]1CC=C(C)C(=O)C1 ULDHMXUKGWMISQ-VIFPVBQESA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- CEYULKASIQJZGP-UHFFFAOYSA-L disodium;2-(carboxymethyl)-2-hydroxybutanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O CEYULKASIQJZGP-UHFFFAOYSA-L 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/0066—Use of inorganic compounding ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/32—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof from compositions containing microballoons, e.g. syntactic foams
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/06—Mounting in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29011—Shape comprising apertures or cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0212—Resin particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
- H05K2203/306—Lifting the component during or after mounting; Increasing the gap between component and PCB
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4069—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in organic insulating substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249971—Preformed hollow element-containing
- Y10T428/249972—Resin or rubber element
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Conductive Materials (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
公开了一种用于将电子部件固定在电路板上或者用于连接电极的导电胶、使用该导电胶的导电结构、电子元件、模块、线路板、电气连接方法、线路板的制造方法和陶瓷电子部件(统称为导电胶等)。使用导电胶的电气连接由于简便而适用于各种领域。通过导电胶中导电颗粒间的接触而确保导电胶的导电性。导电胶加热时通常会产生应力,当应力释放时导电颗粒之间的接触会部分受损,产生高电阻问题。本发明导电胶的特征在于它含有导电颗粒、加热或减压时会发泡的发泡材料和树脂,即使发泡材料发泡后也不会损害其导电性。该导电胶具有良好的抗应力性并能进行低电阻的电气连接。
Description
技术领域
本发明涉及用于将电子元件固定在线路板上或用于电极间连接的导电胶等。
背景技术
用于将电子元件固定在线路板上或者用于电极间连接的导电粘合剂的用途通常是固定和电气连接,因此它一般包括分散在用于固定的粘性树脂或固化型树脂糊中的金属颗粒,如导电性银和铜等。
为了有效地进行连接,使粘合剂和被粘物表面以微米级足够地靠近是重要的。对于粘合型粘合剂,一般使用容易变形并且与被粘物表面具有高亲和力的挠性树脂,而对于固化型粘合剂,则使用高流动性和湿润性的树脂。这样可使粘合型粘合剂或固化型粘合剂进入被粘物上微米大小的凹突中间,形成良好的连接。
另一方面,对于导电颗粒,根据其用途使用不同形状的颗粒,要求粘合型和固化型粘合剂具有低的电阻以便获得良好的电气连接,配制(arrange)这两种类型的粘合剂以改进导电颗粒在粘合剂中的含量比并除去气泡,增加导电颗粒的体积占有率。
另外,对于固化型粘合剂,由于在固化时发生体积收缩,为了缓解形成的内部应力,也可在该粘合剂中加入增塑剂等。
一般来说,使用导电粘合剂的电气连接法由于简便而被用于各种领域中,近来,由于树脂本身或者加入增塑剂产生挠性,因此该方法作为电气连接法广泛用于容易产生热应变和机械应变的场合。另外,使用导电粘合剂的电气连接法被引人注目地应用于并扩展至用于小型电子部件的端电极,并用于将电子部件固定在线路板上。作为例子,一个固定在线路板上的实例公开在日本待审查专利1-232735的说明书中。
但是,对于靠导电颗粒之间的接触来保持导电性的传统导电粘结剂,存在下列问题:在受热产生膨胀或收缩或线路板弯曲时会产生应力,该应力释放时颗粒间的接触会受损,从而使电阻增加。
另外,由于与要连接的电极产生电气连接是通过导电颗粒与电极之间的接触实现的,因此不仅存在上述应力使连接受损的问题,在某些情况下还存在电极和粘合剂之间的表面电阻会逐渐增加的问题。
另一方面,近年来为了适应电子设备的小型化和高性能化,不仅在工业上,而且在各种商用电子设备中,需要能高密度地固定各种半导体晶片(如LSI等)的多层线路板。在这种多层线路板中,在具有窄的线路间距的多层线路图形之间高可靠性地进行连接是重要的。
为了满足市场的这种要求,利用内部通孔连接法(也就是整层IVH结构树脂多层线路板(参见日本待审查专利No.06-268345的说明书))代替在通孔内壁上镀有金属的导体(这是传统多层线路板层间连接的主要方法),这种方法可使多层印刷线路板上任选的电极在任选的线路图案位置上进行层间连接。这种导电体填入多层印刷线路板通孔的方法可分别连接所需的各层,并且内部通孔可放置在元件放置地点(part land)的正下方,从而可实现线路板尺寸小型化以及高密度地安装。
但是,内部通孔连接法是用橡皮刮板涂刷导电胶使之填入通孔中,尤其是使导电胶填入直径微小的通孔中而实现的,因此导电胶的粘度特性起重要的作用。对于填充通孔的导电胶,从结构材料的观点看,印刷特性和层间连接的导电性是相互矛盾的。
也就是说,当提高细颗粒中导电颗粒的组成比例以改进导电性时,树脂组分被吸附在导电颗粒的表面上,造成导电胶的粘度上升,从而使印刷变得更困难。另外,当使用的导电颗粒具有较小的表面积(也就是说颗粒直径较大)时,或者为了降低导电胶的粘度以改进印刷特性而降低导电颗粒的结构比例时,导电颗粒之间的接触表面积变小,由此造成可靠性问题。也就是说,导电胶中的导电性,是因为导电颗粒相互之间形成点接触,而由于放置在通路孔上表面上的电极箔和导电颗粒之间的电气连接也取决于导电颗粒和电极箔之间的点接触,因此尤其当线路图案的线宽和导线间距变小时,通孔的直径也相应地变小,在多层线路的层间相互连接中确保高的连接可靠性变得相当困难。
发明的概述
本发明的目的是解决例如上述问题,提供具有低电阻并能承受应力的导电胶等,从而能形成导电结构。
首先,例如粘合剂(它是导电胶的典型例子)的导电性是由分散在粘合剂中的导电颗粒相互接触形成的。另外,粘合剂与电极之间的电气连接是由粘合剂中的导电颗粒与电极接触形成的。因此,当导电颗粒之间的接触面积以及导电颗粒与电极之间的接触面积增加时,可得到具有更小电阻的更良好的电气连接。
在导电粘合剂中,可加入例如发泡树脂粉末作为发泡材料,当加热或减压使发泡树脂粉发泡时,宏观上粘合剂中导电颗粒的体积含量比下降。但是,微观上可使导电颗粒之间以及导电颗粒与电极之间的接触面积等于或大于不含发泡树脂粉末时的接触面积。这可通过如本发明方法这样的制造方法实现。当本发明的固化型导电粘合剂使用在它可自由膨胀的地方时,让发泡树脂粉在树脂固化之前发泡,然后再使粘合剂固化。此时,与不使用发泡树脂粉末的情况相比,导电颗粒之间的接触(由除发泡产生的气泡以外部分中树脂的固化收缩所确定)很少发生变化,并且导电颗粒之间的连接点数量未明显减少。因此,整层导电粘合剂的导电颗粒之间的接触面积基本相同。这会增加整个导电粘合剂层的体积及其表观电阻率,但是电阻不会增加很多,使导电性处于大致相同的水平。
另一方面,当插入具有固定间距的间隙中的导电粘合剂固化时,在使用常规导电粘合剂时,确定的间距会妨碍整层导电粘合剂层的固化收缩,并妨碍通常预期的固化收缩导致的导电颗粒之间接触面积的增加。这种情况会导致简单的膨胀或产生间隙,结果电气连接具有高的电阻值。相反,当使用本发明导电粘合剂时,气泡部分的膨胀大于气泡以外的导电部分的固化收缩,因此与传统情况相比在限定的空间内产生更强的压缩应力,并提高非气泡部分的压力。从而与常规粘合剂相比增加了导电颗粒之间和导电颗粒与附着该导电颗粒的电极之间的接触面积,而不产生任何间隙,使之能获得较低的电阻,具有良好的连接条件。在这种情况下,表观电阻率也变小了。
这种方法可使粘合剂的导电性等于或大于不发泡时的导电性,只要加入的发泡树脂粉的含量比不太高即可。
同时,在粘合剂含有发泡树脂粉的情况下,发泡后的结构体具有网状结构,该结构内具有许多小孔并包括导电颗粒和粘合剂树脂。具有许多孔的结构体非常富于挠性并容易受力变形以释放应力。这种应力释放主要通过孔变形进行,极大地削弱了分开导电颗粒以及分开连接的导电颗粒和电极的力。因此,当形成应变时,它还可以继续保持良好的电气连接。
如上所述,将发泡材料加入导电粘合剂中,可以使导电胶具有良好的抗应力-应变特性并具有低的电阻。
为了达到上述目的,本发明导电胶含有导电颗粒、加热或减压下发泡的发泡材料和树脂,即使在膨胀材料膨胀后,作为电气连接材料仍能保持良好的导电性,也就是说,本发明导电胶的特征在于能使单位体积的电阻率不小于10-5Ωcm,不超过10-2Ωcm。
另外,本发明包括使用这种导电胶的导电结构,电子元件、固定体、线路板、电气连接方法、线路板制造方法和陶瓷电子元件的制造方法。
附图简述
图1中剖面图(A)显示本发明一个实例的导电粘合剂层结构,剖面图(B)显示图(A)的微结构;
图2中剖面图(A)显示传统试样的导电粘合剂层结构,剖面图(B)显示图(A)的微结构;
图3显示本发明一个实例的发泡树脂粉末结构的剖面图;
图4是本发明一个实例的电容器的剖面图;
图5是本发明一个实例的电容器的剖面图;
图6是本发明一个实例的电容器的剖面图;
图7是本发明一个实例中叠层陶瓷电容器的外电极部分的剖面图;
图8是本发明一个实例中叠层陶瓷电容器外电极部分的部分放大剖面图;
图9是本发明一个实例中叠层陶瓷电容器基片上固定体的剖面图;
图10是本发明一个实例中半导体基片上固定体的剖面图;
图11是线路板的部分放大剖面图,表示本发明一个实例中用于填充通孔的导电胶的结构;和
图12是部分方法剖面图,说明实例中线路板的形成方法。
标号描述
1.导电粘合剂层
2.导电颗粒和树脂形成的结构体
3.导电颗粒
4.发泡树脂粉末发泡后的小孔
5.空心树脂颗粒
6.壳壁
7.低沸点烃
8.孔
10.绝缘基片
20.通孔
30.用于填充通孔的导电胶
40.铜箔
50.导电颗粒
60.空心合成树脂颗粒
70.气体、液体或固体
80.微囊(microcapsule)
90.热固化树脂
100.通孔导体
实施本发明的最好方式
下面将参照附图详细说明本发明实例。
在本发明导电胶实例的导电粘合剂中,将具有导电性的导电颗粒分散在粘性树脂或固化型树脂中。
对于导电颗粒无特别的限制,只要它们是用于通用的导电粘合剂的金属颗粒即可。但是这些导电颗粒较好选自金粒、银粒、铜粒、锡粒、铟粒、钯粒、镍粒或铅粒中至少一种的金属颗粒或者由这些金属形成的各种合金颗粒。其中,金粒、银粒或铟粒是较好的,因为在金属本身较柔软的情况下施加压力后容易增加接触面积。另外,当使用加热固化型焊料颗粒时,在加热时颗粒相互间的界面融合形成金属键,这对于降低电阻是有利的。另一方面,也可使用碳颗粒,其优点在于不易受腐蚀。另外,较好还可使用表面上带有上述金属的树脂颗粒、其它金属颗粒或陶瓷颗粒,即也可使用涂覆有至少一种选自金、银、铜、锡、铟、钯、镍或铅的金属或这些金属形成的各种合金的所述树脂颗粒、其它金属颗粒或陶瓷颗粒。
对于使用的粘性树脂无特别的限制,只要它们总体上能用于形成压敏粘合带即可(如丙烯酸类、乙烯类和橡胶类等)。
对于所用的固化型树脂无特别限制,只要它们总体上能用作固化型粘合剂即可(如酚醛树脂类、环氧树脂类、硅氧烷类、丙烯酸类、聚酰亚胺类、丙烯酸酯类、酰胺类、橡胶类和乙烯类等)。
另外,本发明实例的导电粘合剂是在分散有上述导电颗粒的树脂中加入发泡树脂粉末而制得的,所述发泡树脂粉可在加热或减压下发泡。
在使用含这种发泡树脂粉末的导电粘合剂连接或固定在基片上的电极时,使用热处理或减压处理方法使所含的发泡树脂粉末发泡膨胀。
如图1(A)所示,此时形成的导电粘合剂层1具有膨胀结构,在导电颗粒和树脂形成的结构体2中具有大量的小孔4。如图1(B)所示,微结构的构造是使导电颗粒3连接在网络结构中,并且覆盖发泡树脂粉末发泡后形成的小孔4。
这种具有一系列小孔4的网络结构,使导电粘合剂层1具有挠性并且在受到应变时粘合剂层1容易变形,从而可以消除粘合剂层1中的应力。
在这种情况下,与不含发泡树脂粉末的导电粘合剂层相比,宏观上粘合剂中导电颗粒3的体积含量下降。但是,颗粒总数几乎保持不变,因为颗粒总数取决于颗粒的加入量,并且在微观上导电颗粒3之间的接触面积以及导电颗粒3与附着该颗粒的电极之间的接触面积可保持等于或大于不加入发泡树脂粉末时的接触面积。这是因为如上所述,当间距被确定后,由于发泡树脂粉末发泡产生的膨胀力,在导电颗粒3之间和导电颗粒3与其附着的电极之间产生压应力,从而使其相互紧密地填塞,提高了接触面积。
另一方面,例如在能发生自由膨胀的情况下,即使在发泡造成整个体积变大的情况下,也不意味着这是一种简单的膨胀,由于除气泡以外的部分几乎保持不变,结果相互间的接触面积变得几乎相同。
这可使导电性等于或大于传统的情况,只要加入的发泡树脂粉末的含量不过分多即可。
另外,产生应变时释放应力主要是靠小孔4的变形,从而极大地减少了破坏导电颗粒3之间的接触和导电颗粒3与电极之间的连接所需的力。因此,当发生应变时,它还能保持良好的电气连接。
顺便提及,在使用加热固化型树脂作为导电粘合剂时,可同时进行发泡树脂粉末的发泡和粘合剂的固化。当粘合剂在加热时完全固化,发泡树脂粉末就变得不可发泡。为避免出现这种情况,采用单独进行低温加热的方法,或者将发泡安排在与固化进行竞争的过程中进行。在其它固化类型树脂的情况下,可容易地在固化前单独进行热处理和发泡。
另外,还可采用减压使发泡树脂粉末发泡的方法,其优点在于可单独控制发泡过程和固化过程。
在用作导电粘合剂的树脂是粘合剂型树脂的情况下,可容易地通过加热处理或减压处理单独地进行发泡。与固化型树脂不同,此时由于树脂层固化收缩产生的压缩应力不再产生影响,因此初始电阻或多或少地会增大,但是也可同时存在足够的导电性和应力释放效果。
如图3所示,加入导电粘合剂中的发泡树脂粉末较好包括微囊,该微囊包括空心的树脂颗粒5,它具有壳壁6,壳壁内含有例如加热或减压会膨胀的低沸点烃7。顺便提及,所述膨胀包括分解和汽化。
在热发泡的情况下,构型树脂无特别限制,只要在低温加热下能软化即可,较好的是聚偏二氯乙烯和丙烯酸基树脂等。这种树脂在低温下容易膨胀并且容易操作。尤其在加热固化型树脂的情况下,可在脱水或固化前充分膨胀并可得到能释放应力的膨胀结构。另一方面,在减压发泡的情况下,构型树脂较好是例如聚乙烯等这种树脂,它在常温下容易变形并具有柔软性。
在本文中,按发泡前的体积计,将加入导电粘合剂中的发泡树脂粉末的含量设定为粘合剂中每单位体积导电颗粒0.001-0.5体积,该含量范围能得到上述抗应力效果。当体积比小于0.001时,它未显示出应力释放效果,体积比大于0.5,每单位体积导电性粘合剂层中导电颗粒的数量急剧下降,因此即使不发生弯曲,在成形的初始阶段电阻特性也会表现出很低的状态。另外,按体积计,相对粘合剂中的导电性颗粒的体积,发泡树脂粉末的含量较好达到0.01-0.1体积。相关的实验证据将在下面描述。
另外,为了得到良好的抗应力特性和低的电阻特性,需要尽可能地分散小孔4。因此,发泡树脂粉末在发泡前的直径较好不小于1微米但不超过50微米,使得单位体积导电粘合剂层的导电颗粒数目不会急剧下降。从而使得到的膨胀结构能释放应力而不会导致电阻特性下降。相关实验证据将在下面描述。此外,容易捏和的颗粒直径不小于1微米。
另外,发泡树脂粉末的体积膨胀比较好超过1倍,但不大于100倍。在固化时,在发泡树脂粉末发泡时,压缩应力会明显地作用于导电颗粒之间和导电颗粒与电极之间,从而可降低电阻。但是当膨胀比超过100倍时,单位体积导电粘合剂层的导电颗粒数目急剧下降,结果电阻特性明显变差。相关实验证据将在下面描述。
另外,成形导电粘合剂层1(导体)中的孔穴大小最好不小于1微米,但不超过100微米,其在全部导体体积中所占的比例为3-50体积%。在孔穴尺寸小于10微米并且在导体体积中所占比例小于3体积%的情况下,其对应力释放的影响较小,在发生变形时不能保持良好的电气连接。另外,当所占比例超过50体积%时,导电颗粒组分的体积含量下降过大,造成初始电阻增大。此时,当使用小于1微米或大于100微米的孔穴时,尽管其所占的体积比在3-50体积的范围内,也不能获得平坦的应力释放效应并且发现在发生变形时电阻增加。相关的实验证据将在下面描述。
顺便提及,在上述实例中将发泡树脂粉末用作本发明发泡材料,但是所述发泡材料不限于发泡树脂粉末。简单地说,发泡材料可以是任何加热或减压时会发泡的粉末、颗粒或液体。因此,即使发泡材料不是发泡树脂粉末,但是发泡前相对1体积份导电颗粒,发泡材料的体积含量为0.001-0.5。此外,发泡材料颗粒在发泡前的直径应不小于1微米,但是不超过50微米。发泡材料加热或减压产生发泡的体积膨胀比应超过1倍,但不超过100倍。
另外,在上述实例中,使用低沸点烃作为本发明加热或减压时膨胀的物质,但是如上所述,在本申请中,膨胀应包括分解或汽化,因此作为加热或减压时膨胀的物质,可使用无机化合物的水合物等,如氯化亚铜的水合物。此外,可例如使用小苏打(碳酸氢钠)。作为有机物质,低沸点烃之外,可使用樟脑、柠檬酸钠、氢化烃、偶氮二香芹酮酰氨基(azo-dicarvoneamido)等。
通过使用上述类型的导电粘合剂进行电气连接,本发明电气连接法能使电子部件以及电极以良好的抗应变的应力特性和低电阻进行电气连接。
例如,本发明方法可用于将基片上的两个电极电气地连接在一起,其中用上述导电粘合剂将所述两个电极连接在一起,随后对导电粘合剂加热或减压,使导电粘合剂层中的发泡材料发泡。顺便提及,对加热固化型导电粘合剂,可仅一次加热使发泡材料(如发泡树脂粉末等)发泡并使导电粘合剂本身固化。例如也可有低温加热过程和高温加热过程,从而在低温加热过程中使发泡材料发泡并在高温加热过程中使导电粘合剂本身固化。另外,一种加热方法可包括不少于3次加热过程。另外,可单独进行减压处理作为发泡过程。
如上所述,当使用本发明导电粘合剂将电子部件固定在基片上时,即使基片发生机械变形和热变形,导电粘合剂层中的导电颗粒本身之间的连接以及基片上的电极与导电颗粒之间的连接也不会被分开,从而可得到高可靠性的电气连接,而不会增加电阻。尤其当将表面涂覆金属的树脂颗粒用作导电颗粒时,抗应变的应力特性得到极大的改进。
另外,在使用导电粘合剂电气连接相互面对面间距恒定的电极的情况下,当使用上述本发明导电粘合剂时,在发泡材料发泡后所述粘合剂在电极之间膨胀,从而能容易地将电极连接在一起(参见图4和5)。
在这种情况下,发泡材料发泡以便使整个粘合剂层膨胀,并且更容易地使电极连接,同时,在导电颗粒本身之间和导电颗粒和电极之间产生压缩应力,从而可增加各种导电材料之间的接触面积,达到降低导电粘合剂层的电阻以及降低电极的表面电阻的效果。
另外,当例如在具有内电极的陶瓷电子部件的端部形成外电极时,使用本发明导电粘合剂使该外电极带有孔穴,从而在发生弯曲时,电子部件能表现出高的可靠性,不会发生性能下降或开裂(参见图7和图8)。
本发明具体实例描述如下。
实施例1
准备市售的单组分液体热固化型银粘合剂作为导电粘合剂。另外,以如图3所示其中填有低沸点烃7的空心树脂颗粒5作为微囊,用作发泡材料之一的发泡树脂粉末,它在100℃左右发泡,平均粒径约20微米。
与银的量相比,以0.0001-1体积比向银粘合剂中加入发泡树脂粉末并进行捏和。也就是说,加入发泡树脂粉末,使其与1体积份银的体积比为0.0001、0.0005、0.001、0.005、0.01、0.05、0.1、0.5和1.0,并进行捏和。
将上述导电粘合剂涂覆在玻璃基片上,构成恒定宽度的导线,涂层厚度为500微米,随后在100℃进行预热使发泡树脂粉末发泡,接着在150℃加热固化之。为了进行比较,在市售的银粘合剂中不加任何物质,制得相同的试样。
随后,观察制得的试样的导线剖面结构。如图2(A)和2(B)所示,常规试样的导电粘合剂层(银粘合剂层)1的剖面带有很少的孔8,导电颗粒(银颗粒)3平均地分散在树脂中并且相互紧密接触。
另一方面,如图1所示加有发泡树脂粉末的导电粘合剂(银粘合剂)的剖面包括在导电粘合剂层(银粘合剂层)1中的许多小孔4,并且在小孔4以外的区域导电颗粒(银颗粒)3如常规材料那样相互间紧密接触。此时,按发泡后发泡树脂粉末的直径换算,发泡树脂粉末的体积膨胀比约为50倍。
接着,评价制得的试样的导线电阻。各试样的电阻值(包括常规试样的电阻值)均约为10mΩ,但是当发泡树脂粉末的体积比为0.5时,电阻或多或少地增加至约30mΩ,在1.0体积比的情况下,电阻增加至约150mΩ。
随后,对各层银粘合剂层进行挠性试验。使用JIS C6481,5.8破裂模量试验法作为本次试验的方法,并且评价基片的电阻特性与挠性量的关系。加有发泡树脂粉末的导电粘合剂试样在发泡树脂粉末的体积比不低于0.001并且弯曲20mm时未观察到电阻增加,并且具有良好的抗应力性能。另一方面,对于常规试样以及发泡树脂的体积比小于0.001的试样,当其弯曲约10mm时,观察到电阻增加。
评价结果列于表1。
表1
导线电阻 | |||
加入量 | 初始值 | 弯曲10mm时 | 弯曲20mm时 |
常规试样 | 10mΩ | 32mΩ | 450mΩ |
0.0001 | 11mΩ | 21mΩ | 230mΩ |
0.0005 | 10mΩ | 15mΩ | 115mΩ |
0.001 | 11mΩ | 12mΩ | 20mΩ |
0.005 | 11mΩ | 12mΩ | 16mΩ |
0.01 | 10mΩ | 11mΩ | 13mΩ |
0.05 | 11mΩ | 11mΩ | 12mΩ |
0.1 | 12mΩ | 12mΩ | 12mΩ |
0.5 | 29mΩ | 30mΩ | 30mΩ |
1.0 | 150mΩ | 155mΩ | 158mΩ |
如上所述,加入量在0.001-0.5体积比的范围内,结果可得到良好的初始电阻和抗应力特性。
实施例2
描述发泡前的粒径的影响。与实施例1相似,准备市售的单组分液态热固化型银粘合剂作为导电粘合剂。另外,制得与实施例1相似的粉末作为发泡树脂粉末。但是选用比实施例1发泡树脂粉末的体积膨胀比更小的树脂粉末。
另外,制得不同粒径的发泡树脂粉末,将发泡前的粒径分成小于1.0微米、1.0-10微米、10-50微米和大于50微米后的各类使用。
将各个粒径类别的发泡树脂粉加入制得的银粘合剂中,使得按1体积份银计体积比为0.05并捏和之,制得实施例2的导电粘合剂。
用与实施例1相似的方法评价上面制得的导电粘合剂涂层。但是评价时涂层厚度为200微米。发泡后发泡树脂粉末的体积膨胀率约为10倍。
评价结果列于表2。
导线电阻 | |||
初始值 | 10mm弯曲值 | 20mm弯曲值 | |
30mΩ | 120mΩ | 1080mΩ | |
35mΩ | 105mΩ | 950mΩ | |
l. | 32mΩ | 32mΩ | 35mΩ |
10- | 35mΩ | 36mΩ | 38mΩ |
超过50微米 | 80mΩ | 180mΩ | 1250mΩ |
在本发明中,当使用小于1.0微米的发泡树脂粉末时,在捏和粘合剂涂料时发泡树脂难以均匀地分散,因此应力释放效果不足。当使用超过50微米的发泡树脂粉末时,对于200微米厚的涂层,发泡树脂粉末会局部存在于导电粘合剂层中,使得初始电阻和抗应力特性是不规则的。
实施例3
说明体积膨胀率的影响。制得数种具有不同微囊壳壁软化温度的粉末,作为要加入的发泡树脂粉末,将它们分别加入,制得与实施例1相似的导电粘合剂作为实施例3的导电粘合剂,但是选择发泡树脂粉末的加入量,使得按1体积份银计体积比为0.05。
接着,如实施例1制得试样进行评价,但是对于不同软化温度的各种发泡树脂粉末的加热和发泡条件各不相同,结果发泡树脂粉末发泡造成的体积膨胀比为50倍、100倍和200倍。
另一方面,制得不会发泡的树脂球,将该树脂球加入粘合剂中代替所述微囊,重复上述方法,制得体积膨胀率为1(不发生膨胀)的导电粘合剂,使用这种导电粘合剂制得相似的试样用于评价。
对于上面制得的评价试样,用与实施例1相似的方法评价导线电阻。
结果,对于常规试样和膨胀率为1倍、50倍和100倍的试样,测得约10mΩ的相似的数据,对于200倍试样,测得电阻约为50mΩ,确定导线电阻上升。
但是当如实施例1那样进行挠性试验时,对于常规试样和1倍的试样,如实施例1的常规试样那样导线电阻上升,并且弯曲后不能保持良好的电阻特性。
实施例4
说明结合部孔穴体积率的影响。根据实施例1加入预定量的各种发泡树脂粉末制得银粘合剂涂料,涂覆该涂料形成厚约500微米的导线制得试样用于评价。
评价结果列于表3。
表3
导电粘合剂结构体中的孔 | 导线电阻 | |||
孔直径 | 孔含量 | 初始值 | 10mm弯曲值 | 20mm弯曲值 |
常规试样 | 10mΩ | 32mΩ | 450mΩ | |
小于1微米 | 25体积% | 11mΩ | 28mΩ | 360mΩ |
1-10微米 | 1体积% | 11mΩ | 30mΩ | 400mΩ |
1-10微米 | 3体积% | 10mΩ | 15mΩ | 18mΩ |
1-10微米 | 10体积% | 11mΩ | 12mΩ | 15mΩ |
1-10微米 | 50体积% | 12mΩ | 15mΩ | 18mΩ |
1-10微米 | 60体积% | 60mΩ | 80mΩ | 85mΩ |
10-100微米 | 3体积% | 10mΩ | 12mΩ | 15mΩ |
10-100微米 | 50体积% | 15mΩ | 16mΩ | 18mΩ |
超过100微米 | 3体积% | 50mΩ | 80mΩ | 120mΩ |
超过100微米 | 50体积% | 150mΩ | 250mΩ | 500mΩ |
由上述评价结果可见,导电结构体的孔需要具有下列性能:
*要求不少于3体积%:一定量的孔体积是产生抗应力特性所必需的。
*要求不超过50体积%:超过50体积%,初始电阻值上升。
*要求直径不小于1微米:难以制得小于1微米的发泡树脂粉末作为工作涂料,它产生絮凝从而不能产生抗弯曲的应力释放效应。
*要求直径不超过100微米:为了连接电子部件,估计最大的厚度不超过1mm。为了在1mm厚度中保持均匀性以产生抗应力特性,孔的直径不得超过100微米。
实施例5
如实施例1那样,准备市售的单组分液态热固化型银粘合剂作为导电粘合剂。另外,用低沸点烃填充空心树脂颗粒制得微囊作为发泡树脂粉末,它在约100℃发泡并且平均粒径约20微米。向银粘合剂中加入所述发泡树脂粉末,以银计使体积比为0.1,捏和后制得实施例5的导电粘合剂。
在上述产物之外,从市场上购得与上述粘合剂相似的单组分热固化型银粘合剂,但是该树脂颗粒表面上涂覆有银,将该粘合剂作为导电粘合剂。向该粘合剂中加入与上面相似的发泡树脂粉末(微囊),使发泡树脂粉末与导电颗粒的体积(包括树脂颗粒的体积)比达到0.1,从而制得实施例5的另一种导电粘合剂。
使用制得的各种导电粘合剂将压电元件固定在基片上。为了进行比较,制得使用不含发泡树脂粉末的常规导电粘合剂(银粘合剂)的试样。顺便提及,粘合剂的热固化是在150℃进行的,并且发泡树脂粉末的发泡和粘合剂的固化是同时进行的。此时,发泡树脂粉末由于发泡造成的体积膨胀率约为20倍。
向固定的压电元件重复施加驱动电压以进行抗负荷试验。
根据10,000次负荷试验,对于使用实施例5导电粘合剂的试样,在使用通常的银颗粒的导电粘合剂的情况下,以及使用涂覆银的树脂颗粒的情况下,电阻未增加并且获得良好的电-机械转化特性。另一方面,对于使用常规导电粘合剂的情况下,在结合部电阻增加,电-机械转化特性下降。
实施例6
与实施例1相似,准备市售的单组分液态热固化型银粘合剂作为导电粘合剂。另外用低沸点烃填充空心树脂颗粒制得微囊作为发泡树脂粉末,它在约120℃发泡,平均粒径约为10微米。向该银粘合剂中以按银计0.05体积比的量加入发泡树脂粉末,捏和制得实施例6的导电粘合剂。
另一方面,与上述不同,制得钽多孔烧结体作为固体电解质电容器的正极。用通用方法在该烧结体上形成介电氧化物薄膜和再一层固体电解质。随后以叠层的方式在该元件四周形成碳淤浆层和银淤浆层,使之与固体电解质接触,形成固体电解质电容器的核心部分。
图6是表示一个实例的Ta电解质电容器的中央剖面图。图中,负极层(碳淤浆层和银淤浆层)以标号52表示,本发明导电粘合剂层以标号53表示,外层树脂以标号54表示,负极以标号55表示,正极引线以标号56表示,绝缘板以标号57表示,正极端以标号58表示导电粘合剂层53将负极层52和负极端55连接在一起。
使用实施例6制得的导电粘合剂将固体电解质电容器的核心部分的负极层52与负极端55连接在一起。
为了进行比较,制得使用常规导电粘合剂(银粘合剂)的试样。本实施例中导电粘合剂的加热固化在150℃进行,发泡树脂粉末的发泡和固化同时进行。此时发泡造成的发泡树脂粉末的体积膨胀率约为2-5倍。连接电阻的评价结果表明常规粘合剂和本发明粘合剂产生的电阻均不超过2mΩ。
如图6所示,用常规方法使用树脂模制各个电容器试样,制得固态电解质电容器。在树脂模制时,由于所用的各种材料的热膨胀和收缩而产生应变。由于树脂的模制,常规粘合剂的连接电阻增加至5mΩ,而使用实施例6的导电粘合剂的试样未观察到连接电阻上升。
实施例7
与实施例1相似,准备市售的单组分液态热固化型银粘合剂作为导电粘合剂。另外用低沸点烃填充空心树脂颗粒制得微囊作为发泡树脂粉末,它在约120℃发泡,平均粒径约为10微米。向该银粘合剂中以按银计0.05体积比的量加入发泡树脂粉末,捏和制得实施例7的导电粘合剂。
另一方面,与上述不同,制得钽多孔烧结体作为使用钽的固体电解质电容器的正极。用通用方法在该烧结体上形成介电氧化物薄膜和再一层固体电解质。随后以叠层的方式在元件四周形成碳淤浆层和银淤浆层,使之与固体电解质接触,形成固体电解质电容器的核心部分。
图4是表示一个实例的Ta电解质电容器的中央剖面图。如上所述,将如上制得的固态电解质的核心部件插入预先制得的外壳(一般由树脂制得)中,在用导电粘合剂将形成于外壳中的负极引线与银淤浆层(负的内电极)相连后,在两极形成外电极端,构成电容器。在图4中,负电极外端以标号41表示,导电粘合剂层以标号42表示,负极引线以标号43表示,负的内电极以标号44表示,正电极的外端以标号45表示,外壳以标号46表示,正的内电极以标号47表示,密封树脂以标号48表示。
但是固化时固化性粘合剂实际上发生收缩,固化后导电粘合剂未完全填满空隙。因此,极端情况大致如图5所示。另外,为了降低粘合剂成本,可故意进行局部涂覆,形成如图5所示的情况。
在本实施例中,在图4的导电粘合剂层42部分使用本发明发泡导电粘合剂。
但是对于常规试样,在导电粘合剂层42部分使用普通的导电粘合剂。
也就是说,将固态电容器的核心部分插入预制的外壳中,使用实施例6制得的导电粘合剂使之与形成在外壳中的负端电极引线相连。在这种情况下,负端电极的引线和电容器核心部分的银淤浆层(负内电极)之间的距离受外壳的控制并保持固定的距离。随后,密封,在两极形成外电极,制得电容器。
为了进行比较,制得使用常规导电粘合剂(银粘合剂)的试样。
在本实施例中,导电粘合剂的加热固化是在150℃进行的,并且发泡树脂的发泡和固化是同时进行的。此时,发泡树脂粉末发泡造成的体积膨胀率约为2-5倍。
此时连接电阻的评价结果表明,常规试样的连接电阻为5mΩ,使用本发明粘合剂的试样的电阻均降低至2mΩ或更小。将发泡树脂粉末加入导电粘合剂可得到具有良好电阻特性的电气连接。
实施例8
通常,在整体烧结内电极和陶瓷介电层进行印刷而制得的元件体的端部涂覆金属淤浆,形成外电极而制得叠层陶瓷电容器。
在本实施例中,用常规方法制得图7和图8所示的叠层陶瓷电容器,但是用与实施例6相似的发泡导电粘合剂代替金属淤浆进行涂覆,在发泡和固化后形成外电极3。此时,介电陶瓷层以标号61表示,内电极以标号62表示,外电极以标号63表示。图8是图7部分A的放大示意图,外电极63的孔64的体积约占20体积%。为进行比较,制得用常规方法制得的叠层陶瓷电容器。
在对两种电容器的外电极进行焊剂镀覆以后,将其焊接在预定的基片上。接着弯曲该焊接的基片(根据JIS C6481,5.8用于破裂模量的试验方法),考察从基片上的脱落和叠层陶瓷电容器中的裂缝。
评价结果表明,在常规实施例的叠层陶瓷电容器中,在弯曲20mm时外电极发生脱落并且电容器部分发生开裂,造成电容量下降(100个中有80个)。另一方面,在本发明实施例中,尽管发生20mm弯曲,但是所有100个电容器均未发生脱落和开裂,电容量也未下降。
实施例9
使用与实施例6相似方法制得的本发明发泡导电粘合剂将常规叠层陶瓷电容器固定在基片上。图9是固定后基片的剖面图。此时,外电极用标号71表示,电容器核心部件用标号72表示,用本发明导电粘合剂形成的连接部分用标号74表示,在基片76上的接触区用标号75表示。
此时如实施例8那样,弯曲该基片(根据JIS C6481,5.8用于破裂模量的试验方法),评价从基片上的脱落和叠层陶瓷电容器中的裂缝。
结果表明,在本发明实施例中,尽管发生20mm弯曲,但是所有100个电容器均未发生脱落和开裂,电容量也未下降。
实施例10
图10(A)和(B)表示半导体器件81和87固定在基片86和810上。此时,电极底座部分用标号82表示,突起电极用标号83表示,导电粘合剂层用标号84表示,端电极部分用标号85和89表示。在本实施例中,使用发泡导电粘合剂形成导电粘合剂层84。该粘合剂中的发泡树脂粉末的直径、含量和发泡率与实施例6所用的树脂粉末相似。
另外,使用本发明导电粘合剂单独形成突起电极83。
此外,用本发明导电粘合剂制得电极底座部分82。
用上述三种制造方法中的任何一种或者组合使用这三种方法在元件和端电极之间形成电气连接,制得高度抗弯曲的固定体,成功地实现高可靠性电气连接。
另外,在用本发明导电粘合剂代替图10(B)中的突起电极部分83的情况下,也可成功地实现高可靠性的电气连接。
顺便提及,在本发明上述各个实例中,证实使用热固化型导电粘合剂的效果,但是显然用单独热处理的其它固化类型的粘合剂也能达到相似的效果。
另外,显然通过减压处理方法也能达到这些效果。
另外,在粘合剂类型中,电阻特性或多或少地下降,但是显然类似地也能得到应力释放效果。
另外,在上述各个实例中,说明了使用银颗粒作为导电颗粒的例子,但是显然使用至少一种选自金、铜、锡、铟、钯、镍或铅的金属或这些金属的各种合金的颗粒也能得到相似的效果。此外,对于碳颗粒,也能达到相似的效果。另外,可以确认在使用涂覆至少一种选自金、银、铜、锡、铟、钯、镍或铅或它们的各种合金等的金属颗粒、陶瓷颗粒或树脂颗粒的情况下,也能得到相似的效果。具体地说,与实施例5中无显著差异,但是使用涂覆金属的树脂颗粒作为导电颗粒比使用其它导电颗粒形成的粘合剂层更柔软,能适应更严重的变形,因此能得到具有良好抗应力特性的电气连接。
此外,在上述各个实例中,在制得导电粘合剂后加入发泡树脂粉末,但是显然可在捏和导电颗粒和树脂的同时加入该发泡树脂粉末。
顺便提及,在上述实施例中本发明导电胶是一种粘合剂,但它不限于用于将一个元件与另一个元件相连接的粘合剂。而可以是其它导电胶,例如如下所述用于填充通孔的导电胶。
另外,本发明发泡材料、导电元件或树脂等不限于上述实施例所述的结构,由上面说明可知其它结构可获得相似的效果。
下面将参照附图说明用本发明导电胶填充通孔的实例。
填充通孔的本发明导电胶不同于含有导电颗粒和合成树脂作为粘合剂的常规导电胶,不同之处在于本发明导电胶含有发泡材料作为导电胶材料的第三组分,在加热固化时该组分用于使导电胶的体积膨胀。也就是说,本实施例用于填充通孔的导电胶包括30-70体积%的铜粉作为导电颗粒和0.001-40体积%预定组分比的发泡材料,向该导电胶中加入热固化的环氧树脂作为粘合剂(以满足所需的印刷性能)并按需要加入某种溶剂。
导电颗粒的含量较好为上述30-70体积%。小于30体积%,导电颗粒本身的接触可能性变小,其电阻率会上升。超过70体积%,导电胶中的粘合剂组分会变少,粘度会上升,从而难以进行印刷。下面,将描述使用如此配制的导电胶填充通孔的线路基片。
图11(A)显示的绝缘基片10包括通孔20,用于填充通孔的本实施例导电胶30以及铜箔40,其中位于绝缘基片10预定位置上的通孔20填充有用于填充通孔的导电胶30,铜箔40放置在基片10的两个表面上。用于填充通孔的导电胶30包括含有铜粉的导电颗粒50、微囊80以及热固化树脂90,其中微囊80包括空心的热塑性合成树脂(如聚偏二氯乙烯和丙烯酸树脂等)颗粒60,该颗粒中填充有加热时体积会发生膨胀的气体、液体或固体70。
在本实施例中,作为导电颗粒50的铜粉的平均粒径为0.5-20微米,其比表面积为0.05-1.5m2/g,在颗粒表面上的氧密度不超过1.0重量%,并且微囊80中使用丁烷作为加热时体积会发生膨胀的气体70。除丁烷以外,所述体积膨胀的气体可使用甲烷和乙烷等低沸点烃。另外,作为加热时体积会膨胀的非气态物质,可使用低沸点有机溶剂(如醇等)或升华型固体(如樟脑和萘)等。
图11(B)表示在对绝缘基片10进行加热和压制后环氧树脂90发生固化的状态,加热后其中的微囊8的丁烷气体70发生体积膨胀,推开仍处于固化前状态的环氧树脂90,从而在铜粉50之间产生强大的压力,增加其接触面积并且强化铜粉50与铜箔40的接触,起到降低通孔电导体100的内电阻的作用。另外,由于填充通孔的本发明导电胶,与常规导电胶相比可减少导电胶中导电颗粒的含量而不会增加其内电阻,因此可改进导电胶的印刷性能,而且通过减少导电颗粒的用量可降低成本。
在本实施例中,说明了使用铜粉作为导电颗粒50的实施例,但是使用单种的金、银、钯、镍、锡或铅的金属粉末或其合金粉末可达到相似的效果。
为了使用本发明技术并达到最大的效果,作为导电颗粒的金属粉末较好相对柔软,也就是说容易塑性变形至这样一种程度,即当加热使微囊发泡而体积膨胀时,它会因受压而容易发生变形。另外,导电颗粒50的粒径较好为0.2-20微米,从而可得到低的比电阻以及高的连接可靠性。也就是说,粒径大于20微米会降低颗粒之间的接触面积,增加比电阻,另一方面,粒径小于0.2微米会增加比表面积,提高导电胶的粘度,因此印刷性能下降。导电颗粒50的比表面积较好为0.05-1.5m2/g,在这粒径范围内导电胶的印刷特性最适合。
如上所述,在本实施例中使用铜粉作为导电颗粒50,但是铜粉表面容易氧化,因此实践中难以将金属状态的颗粒表面转化成淤浆状态。但是,铜粉表面上的氧化膜会变厚,在形成通孔导体后它是影响导电性的一个因素。因此,在本发明中,使用铜粉表面上氧密度不大于或等于1.0重量%的铜粉。
下面将参照图12(A)-12(D)说明本发明实例的线路基片的制造方法。
如图12(A)所示,在由浸渍热固化型树脂(如环氧树脂等)的纤维基片(如芳族聚酰胺非织造织物等)制得的绝缘基片110处于半固化状态时,在其两个表面上粘合有机膜120(例如聚对苯二甲酸乙二醇酯膜等),用激光等在绝缘基片110的预定位置形成多个通孔130,用印刷法在通孔130中填充带有微囊80的通孔填充导电胶30。
如图12(B)所示,在剥离有机膜以后,在绝缘基片110的两个表面上放置铜箔140(如图12(C)所示),对这两个表面压缩并加热,使微囊80体积膨胀,以便将液态的热固化型树脂推开并同时利用膨胀压力使导电颗粒紧密接触。从而形成稳定的导电通道。
接着,使半固化状态的绝缘基片110完全固化并与铜箔140粘合。
随后如图12(D)所示,对铜箔140使用常规的光刻法形成图案,在两个表面上形成预定的线路150,从而制得线路基片。
在本实施例中,描述的是使用双表面线路的基片作为绝缘基片110,在制造时将热固化型树脂(如环氧树脂等)浸渍纤维基片(如芳族聚酰胺非织造织物等),制得半固化状态的整层IVH结构树脂多层的基片,但是也可以使用玻璃环氧基片或合成树脂膜基片作为绝缘基片110。在这种情况下,在图12(C)中仅通过加热就可以使微囊80充分发泡,在绝缘基片110的两个表面上施加的压力是达到不使内压减弱的水平。当然,可施加更大的内压,以确保更稳定的导电通路。
还可通过叠合多片这样制得的双面线路基片而制得多层线路基片。
工业实用性
由上面描述可见,本发明导电胶具有良好的抗应力应变特性和低的电阻。
另外,使用本发明导电胶的电气连接法可使该电气连接具有良好的抗应力性能和低的电阻。
此外,本发明的导电结构能得到具有低电阻和优良抗应力应变特性的导电结构。
此外,本发明填充通路孔的导电胶能降低通路孔导体的内电阻,通过发泡剂体积膨胀时的内压,增大导电胶中导电颗粒之间的接触面积以及导电颗粒与分别形成线路的铜箔之间的接触面积,改进线路的层间连接可靠性。
另外,可以减少导电胶中导电颗粒的含量。从而改进导电胶的印刷性能,获得更好的生产率,减少导电颗粒的含量还具有降低成本的效果。
Claims (35)
1.一种导电粘结结构,它含有:
导电颗粒;
经加热或减压发泡的发泡材料;和
树脂;
在所述发泡材料的每个泡孔周围的所述导电颗粒相互电气接触,并且所述电气接触的导电颗粒与所述树脂一起形成一种网络结构。
2.如权利要求1所述的导电粘结结构,其特征在于所述导电颗粒是金属颗粒、碳颗粒或表面上涂覆金属的颗粒。
3.如权利要求1所述的导电粘结结构,其特征在于所述发泡材料是发泡树脂粉末。
4.如权利要求3所述的导电粘结结构,其特征在于所述发泡树脂粉末是一种微囊,它包括空心的树脂颗粒,颗粒内包含加热或减压时会发生膨胀的物质。
5.如权利要求4所述的导电粘结结构,其特征在于所述加热或减压时会发生膨胀的物质是低沸点的烃。
6.如权利要求1所述的导电粘结结构,其特征在于发泡前所述发泡材料的含量为每单位体积所述导电颗粒0.001-0.5体积。
7.如权利要求1所述的导电粘结结构,其特征在于发泡前所述发泡材料的粒径不小于1微米,不大于50微米。
8.如权利要求1所述的导电粘结结构,其特征在于加热或减压造成的所述发泡材料的体积膨胀比超过1倍,不大于100倍。
9.如权利要求2所述的导电粘结结构,其特征在于所述金属颗粒是至少一种选自金、银、铜、锡、铟、钯、镍或铅的金属颗粒,或者是这些金属的各种合金的颗粒。
10.如权利要求2所述的导电粘结结构,其特征在于用于涂覆颗粒表面的金属是至少一种选自金、银、铜、锡、铟、钯、镍或铅的金属或者这些金属的各种合金。
11.如权利要求2所述的导电粘结结构,其特征在于所述表面上涂覆金属的颗粒是树脂颗粒。
12.如权利要求1-11中任何一项所述的导电粘结结构,其特征在于所述导电胶是用于填充通路孔的导电粘结结构,它的主要成分为导电颗粒和热固化型树脂。
13.如权利要求12所述的导电粘结结构,其特征在于所述导电颗粒是至少一种选自金、银、钯、铜、镍、锡、铅和铟或者这些金属的合金的金属颗粒,其平均粒径为0.5-20微米,比表面积为0.05-1.5m2/g。
14.如权利要求13所述的导电粘结结构,其特征在于所述导电颗粒是铜颗粒,其平均粒径为0.5-20微米,比表面积为0.05-1.5m2/g,表面氧密度不超过1.0重量%。
15.如权利要求12所述的导电粘结结构,其特征在于所述热固化树脂是热固化环氧树脂组合物。
16.一种线路基片,它包括:
具有通孔的绝缘基片;
形成于所述绝缘基片表面上的线路图案;和
填充所述通孔的通路孔导体,以便将形成在所述绝缘基片两个表面上或者在多层叠层结构上的线路图案电气相连,
其特征在于使用权利要求12所述的导电粘结结构作为所述通路孔导体。
17.如权利要求16所述的线路基片,其特征在于所述绝缘基片是合成树脂膜,或者是处于半固化状态浸渍树脂的织造织物基片,如芳族聚酰胺环氧树脂和玻璃环氧树脂等,或者是非织造织物基片。
18.一种线路基片的制造方法,它至少包括下列步骤:
在绝缘基片上形成多个通孔;
在所述通孔中填充导电胶,所述导电胶包括导电颗粒、在加热或减压时发泡的发泡材料和树脂;
在所述绝缘基片的两面放置铜箔,随后通过热量和压力使所述填充通路孔的所述导电胶中的发泡剂发生体积膨胀,在所述发泡材料的每个泡孔周围的所述导电颗粒相互电气接触,并且所述电气接触的导电颗粒与所述树脂一起形成一种网络结构;
固化导电胶;和
将所述铜箔蚀刻成预定图案形状,形成线路图形。
19.如权利要求18所述的线路基片的制造方法,其特征在于使用合成树脂膜,或者处于半固化状态浸渍树脂的织造织物基片,如芳族聚酰胺环氧树脂和玻璃环氧树脂等,或者使用非织造织物基片作为所述绝缘基片。
20.一种与预定部位电气连接的导电结构,其特征在于所述导电结构包括许多由发泡材料发泡形成的实体空腔。
21.如权利要求20所述的导电结构,其特征在于所述导电结构是包括许多使用权利要求1所述的导电粘结结构形成的实体空腔的导电结构。
22.如权利要求20所述的导电结构,其特征在于含有许多发泡形成的实体空腔的所述导电结构包括不小于1微米,不大于100微米的孔穴,其含量占3-50体积%。
23.如权利要求20所述的导电结构,其特征在于含有许多发泡形成的实体空腔的所述导电结构的体积电阻率不小于10-6Ω·cm,不大于10-2Ω·cm。
24.一种陶瓷电子元件,它包括一个内电极,其特征在于与所述内电极电气相连并且形成于端部的一个外电极部分,其包括如权利要求21所述含有许多实体空腔的导电结构。
25.一种外壳型或模压型电子元件,它包括通过导体与外电极电气连接的内电极,
其特征在于将所述内电极与外电极或者与外电极电气连接的引出电极相连的导体包括如权利要求21所述含有许多实体空腔的导电结构。
26.一种固定体,其中的电子元件与基片电气相连,其特征在于所述连接部分包括如权利要求21所述含有许多实体空腔的导电结构。
27.如权利要求26所述的固定体,其特征在于所述电子元件是半导体器件。
28.一种含有内电极的陶瓷电子元件的制造方法,它包括下列步骤:
用导电胶涂覆露出所述内电极的端部预定位置,所述导电胶包括导电颗粒、在加热或减压时发泡的发泡材料和树脂;和
加热或减压所述导电胶,使所述导电胶中的发泡材料发泡形成外电极部分;
在所述发泡材料的每个泡孔周围的所述导电颗粒相互电气接触,并且所述电气接触的导电颗粒与所述树脂一起形成一种网络结构。
29.一种使用导电胶的电气连接方法,它包括下列步骤:
使用导电胶将一个预定部位与除该预定部位以外的另一个预定部位连接在一起,所述导电胶包括导电颗粒、在加热或减压时发泡的发泡材料和树脂;和
加热或减压所述导电胶,使所述导电胶中的发泡材料发泡;
在所述发泡材料的每个泡孔周围的所述导电颗粒相互电气接触,并且所述电气接触的导电颗粒与所述树脂一起形成一种网络结构。
30.如权利要求29所述的电气连接方法,其特征在于所述导电胶在所述发泡步骤的同时固化。
31.如权利要求29所述的电气连接方法,它包括在所述发泡步骤后对导电胶进行固化的步骤。
32.如权利要求31所述的电气连接方法,其特征在于所述发泡步骤是在预定温度进行的,所述固化步骤是在高于该预定温度的温度下进行的。
33.如权利要求29所述的电气连接方法,其特征在于所述预定的部位是一个电子元件的预定部位,所述另一个部位是基片的预定部位。
34.如权利要求33所述的电气连接方法,其特征在于所述电子元件是半导体器件。
35.如权利要求29所述的电气连接方法,其特征在于:
所述预定部位是外壳型或模压型电子元件的内电极,该电子元件包括通过导体与外电极电气相连的内电极;和
所述另一个预定部位是所述外电极或与所述外电极电气相连的引出电极。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24415198 | 1998-08-28 | ||
JP244151/1998 | 1998-08-28 | ||
JP244151/98 | 1998-08-28 | ||
JP324699/98 | 1998-11-16 | ||
JP32469998 | 1998-11-16 | ||
JP324699/1998 | 1998-11-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1287672A CN1287672A (zh) | 2001-03-14 |
CN1273993C true CN1273993C (zh) | 2006-09-06 |
Family
ID=26536599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998019291A Expired - Fee Related CN1273993C (zh) | 1998-08-28 | 1999-08-26 | 导电粘结结构,含该结构的制品及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6479763B1 (zh) |
EP (1) | EP1050888B1 (zh) |
CN (1) | CN1273993C (zh) |
DE (1) | DE69942824D1 (zh) |
WO (1) | WO2000013190A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102863921A (zh) * | 2011-07-06 | 2013-01-09 | 日东电工株式会社 | 导电性粘合带 |
CN106575536A (zh) * | 2014-08-14 | 2017-04-19 | 株式会社韩国Alteco | 传导性复合物及其制备方法 |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4345153B2 (ja) * | 1999-09-27 | 2009-10-14 | ソニー株式会社 | 映像表示装置の製造方法 |
US6512183B2 (en) * | 2000-10-10 | 2003-01-28 | Matsushita Electric Industrial Co., Ltd. | Electronic component mounted member and repair method thereof |
JP2002217510A (ja) * | 2001-01-15 | 2002-08-02 | Matsushita Electric Ind Co Ltd | 基板の接続構造とその製造方法 |
US6855791B2 (en) | 2002-07-09 | 2005-02-15 | Signature Control Systems | Process and apparatus for improving and controlling the vulcanization of natural and synthetic rubber compounds |
US7245985B2 (en) | 2001-03-21 | 2007-07-17 | Signature Control Systems | Process and apparatus for improving and controlling the vulcanization of natural and synthetic rubber compounds |
US7167773B2 (en) | 2001-03-21 | 2007-01-23 | Signature Control Systems | Process and apparatus for improving and controlling the curing of natural and synthetic moldable compounds |
US6774643B2 (en) | 2001-03-21 | 2004-08-10 | Signature Control Systems | Non-bridged single electrode impedance measurement system for determining a condition of a dielectric according to impedance related changes over a range of frequencies |
US6661644B2 (en) | 2001-10-05 | 2003-12-09 | Matsushita Electric Industrial Co., Ltd. | Capacitor |
US7311967B2 (en) * | 2001-10-18 | 2007-12-25 | Intel Corporation | Thermal interface material and electronic assembly having such a thermal interface material |
DE60231232D1 (de) * | 2001-11-28 | 2009-04-02 | Dow Corning Toray Co Ltd | Anisotrop elektroleitfaehiger klebefilm, verfahren zu seiner herstellung und halbleitervorrichtungen |
DE10204959A1 (de) * | 2002-02-06 | 2003-08-14 | Endress & Hauser Gmbh & Co Kg | Leiterplatte mit einem Bauteil |
KR20040049913A (ko) * | 2002-12-05 | 2004-06-14 | 소니 케미카루 가부시키가이샤 | 잠재성 경화제, 잠재성 경화제의 제조방법 및 접착제 |
TWI325739B (en) * | 2003-01-23 | 2010-06-01 | Panasonic Corp | Electroconductive paste, its manufacturing method, circuit board using the same electroconductive paste, and its manufacturing method |
KR100595011B1 (ko) * | 2004-08-07 | 2006-06-30 | 주식회사 위쉬윈 | 다공성 세라믹스 발열체 및 그 제조방법 |
JP4706209B2 (ja) * | 2004-08-30 | 2011-06-22 | 株式会社デンソー | 積層型圧電体素子及びその製造方法並びに導電性接着剤 |
JP3964911B2 (ja) * | 2004-09-03 | 2007-08-22 | 松下電器産業株式会社 | バンプ付き基板の製造方法 |
JP2006131429A (ja) * | 2004-11-02 | 2006-05-25 | Towa Corp | 低密着性材料及び樹脂成形型 |
KR101150994B1 (ko) * | 2004-11-11 | 2012-06-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
EP1830399A4 (en) * | 2004-12-17 | 2012-07-11 | Panasonic Corp | RESIN COMPOSITION FOR FLIP CHIP CAPSULATION AND RESIN COMPOSITION FOR FORMING A BULB |
KR101298829B1 (ko) * | 2005-03-04 | 2013-08-23 | 데쿠세리아루즈 가부시키가이샤 | 이방 도전성 접착제 및 이것을 이용한 전극의 접속 방법 |
JP4084835B2 (ja) * | 2005-03-29 | 2008-04-30 | 松下電器産業株式会社 | フリップチップ実装方法および基板間接続方法 |
CN100495677C (zh) * | 2005-03-29 | 2009-06-03 | 松下电器产业株式会社 | 倒装芯片封装方法及其焊锡点形成方法 |
CN101156219B (zh) * | 2005-04-12 | 2011-04-20 | 旭硝子株式会社 | 油墨组合物及金属质材料 |
US7676953B2 (en) | 2006-12-29 | 2010-03-16 | Signature Control Systems, Inc. | Calibration and metering methods for wood kiln moisture measurement |
US7851342B2 (en) * | 2007-03-30 | 2010-12-14 | Intel Corporation | In-situ formation of conductive filling material in through-silicon via |
KR100888404B1 (ko) * | 2007-06-22 | 2009-03-13 | 삼성전기주식회사 | 도전성 페이스트와 이를 이용한 인쇄회로기판 및 그제조방법 |
JP5123633B2 (ja) * | 2007-10-10 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 半導体装置および接続材料 |
US7906046B2 (en) * | 2008-04-04 | 2011-03-15 | Panduit Corp. | Antioxidant joint compound and method for forming an electrical connection |
JP2009290124A (ja) * | 2008-05-30 | 2009-12-10 | Fujitsu Ltd | プリント配線板 |
JP5217639B2 (ja) * | 2008-05-30 | 2013-06-19 | 富士通株式会社 | コア基板およびプリント配線板 |
JP2009290135A (ja) * | 2008-05-30 | 2009-12-10 | Fujitsu Ltd | プリント配線板の製造方法および導電性接合剤 |
JP5217640B2 (ja) * | 2008-05-30 | 2013-06-19 | 富士通株式会社 | プリント配線板の製造方法およびプリント基板ユニットの製造方法 |
JP4816750B2 (ja) * | 2009-03-13 | 2011-11-16 | 住友電気工業株式会社 | プリント配線基板の接続方法 |
US20110100709A1 (en) * | 2009-10-30 | 2011-05-05 | Dongyan Wang | Spd films and light valve laminates with improved bus-bar connections |
KR20110065622A (ko) * | 2009-12-10 | 2011-06-16 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
JP5806030B2 (ja) * | 2011-07-28 | 2015-11-10 | 京セラ株式会社 | 回路基板およびこれを備える電子装置 |
KR101525689B1 (ko) * | 2013-11-05 | 2015-06-03 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 적층 세라믹 전자 부품의 실장 기판 |
KR102007295B1 (ko) * | 2013-12-12 | 2019-08-05 | 삼성전기주식회사 | 적층 세라믹 커패시터, 그 제조방법 및 적층 세라믹 커패시터의 실장 기판 |
CN106170851B (zh) * | 2014-02-04 | 2019-03-08 | 株式会社村田制作所 | 电子元器件模块、以及电子元器件模块的制造方法 |
JP6235952B2 (ja) | 2014-03-28 | 2017-11-22 | 三菱マテリアル株式会社 | 導電性ペースト |
DE102014008756A1 (de) * | 2014-06-12 | 2015-12-17 | Pfisterer Kontaktsysteme Gmbh | Vorrichtung zum Kontaktieren eines elektrischen Leiters sowie Anschluss- oder Verbindungseinrichtung mit einer solchen Vorrichtung |
JP6918773B2 (ja) * | 2016-03-11 | 2021-08-11 | 日本碍子株式会社 | 接続基板の製造方法 |
CN106852014A (zh) * | 2017-02-07 | 2017-06-13 | 广东小天才科技有限公司 | 一种新型粘接结构及粘接方法 |
KR101892849B1 (ko) | 2017-03-02 | 2018-08-28 | 삼성전기주식회사 | 전자 부품 |
US11240916B2 (en) * | 2017-05-31 | 2022-02-01 | Cryovac, Llc | Electronic device, method and apparatus for producing an electronic device, and composition therefor |
JP6890520B2 (ja) * | 2017-10-04 | 2021-06-18 | 三菱電機株式会社 | 電力用半導体装置 |
GB201717121D0 (en) * | 2017-10-18 | 2017-11-29 | Mbda Uk Ltd | Circuit Assembly |
US11122689B2 (en) | 2017-10-18 | 2021-09-14 | Mbda Uk Limited | Circuit assembly |
JP6819657B2 (ja) * | 2018-07-25 | 2021-01-27 | カシオ計算機株式会社 | プログラム |
JP2020107704A (ja) * | 2018-12-27 | 2020-07-09 | Tdk株式会社 | 電子部品 |
DE102019107633A1 (de) * | 2019-03-25 | 2020-10-29 | Sphera Technology Gmbh | Mehrkomponentensystem und Verfahren zur Herstellung eines Mehrkomponentensystems |
KR102502104B1 (ko) * | 2021-02-25 | 2023-02-23 | 주식회사 아이에스시 | 전기 접속용 커넥터 |
JP2022191910A (ja) * | 2021-06-16 | 2022-12-28 | 株式会社村田製作所 | 積層セラミック電子部品 |
CN115678455A (zh) * | 2022-10-26 | 2023-02-03 | 惠科股份有限公司 | 各向异性导电胶和显示装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5376372A (en) * | 1976-12-17 | 1978-07-06 | Matsushita Electric Ind Co Ltd | Device for attaching chip circuit parts |
DE2800102A1 (de) | 1977-01-12 | 1978-07-20 | Philips Nv | Traeger mit einem muster elektrisch leitender bahnen |
US4383363A (en) * | 1977-09-01 | 1983-05-17 | Sharp Kabushiki Kaisha | Method of making a through-hole connector |
JPS61113629A (ja) * | 1984-11-08 | 1986-05-31 | Kanegafuchi Chem Ind Co Ltd | 発泡性組成物およびその発泡体 |
JPH06103701B2 (ja) | 1988-03-11 | 1994-12-14 | 松下電器産業株式会社 | 半導体装置の実装体 |
US5180523A (en) * | 1989-11-14 | 1993-01-19 | Poly-Flex Circuits, Inc. | Electrically conductive cement containing agglomerate, flake and powder metal fillers |
US4991060A (en) * | 1989-11-24 | 1991-02-05 | Nippon Cmk Corporation | Printed circuit board having conductors interconnected by foamed electroconductive paste |
JPH03283594A (ja) * | 1990-03-30 | 1991-12-13 | Toshiba Lighting & Technol Corp | 回路基板 |
JP2827526B2 (ja) * | 1991-01-23 | 1998-11-25 | 日立エーアイシー株式会社 | 樹脂外装型コンデンサ |
US5283104A (en) * | 1991-03-20 | 1994-02-01 | International Business Machines Corporation | Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates |
JP2880335B2 (ja) * | 1991-09-09 | 1999-04-05 | 太陽誘電株式会社 | 厚膜回路基板の製造方法 |
JP2601128B2 (ja) | 1992-05-06 | 1997-04-16 | 松下電器産業株式会社 | 回路形成用基板の製造方法および回路形成用基板 |
JPH06139817A (ja) * | 1992-10-20 | 1994-05-20 | Sumitomo Bakelite Co Ltd | 導電性銀ペースト組成物 |
JPH07307351A (ja) * | 1994-05-11 | 1995-11-21 | Toshiba Chem Corp | 導電性ペースト |
JP3104541B2 (ja) * | 1994-09-05 | 2000-10-30 | 松下電器産業株式会社 | プリント配線板の製造方法 |
JPH08162359A (ja) | 1994-12-08 | 1996-06-21 | Murata Mfg Co Ltd | チップ型セラミック電子部品 |
US5698015A (en) * | 1995-05-19 | 1997-12-16 | Nikko Company | Conductor paste for plugging through-holes in ceramic circuit boards and a ceramic circuit board having this conductor paste |
JP2965496B2 (ja) * | 1995-12-01 | 1999-10-18 | 松下電器産業株式会社 | 半導体ユニット及び半導体素子の実装方法 |
JP3689159B2 (ja) * | 1995-12-01 | 2005-08-31 | ナミックス株式会社 | 導電性接着剤およびそれを用いた回路 |
JPH10256687A (ja) * | 1997-03-14 | 1998-09-25 | Matsushita Electric Ind Co Ltd | ビアホール充填用導体ペースト組成物とそれを用いたプリント配線基板 |
US5855820A (en) * | 1997-11-13 | 1999-01-05 | E. I. Du Pont De Nemours And Company | Water based thick film conductive compositions |
US6139777A (en) * | 1998-05-08 | 2000-10-31 | Matsushita Electric Industrial Co., Ltd. | Conductive paste for filling via-hole, double-sided and multilayer printed circuit boards using the same, and method for producing the same |
-
1999
- 1999-08-26 WO PCT/JP1999/004595 patent/WO2000013190A1/ja active Application Filing
- 1999-08-26 CN CNB998019291A patent/CN1273993C/zh not_active Expired - Fee Related
- 1999-08-26 EP EP19990940485 patent/EP1050888B1/en not_active Expired - Lifetime
- 1999-08-26 DE DE69942824T patent/DE69942824D1/de not_active Expired - Lifetime
- 1999-08-26 US US09/530,466 patent/US6479763B1/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102863921A (zh) * | 2011-07-06 | 2013-01-09 | 日东电工株式会社 | 导电性粘合带 |
CN106575536A (zh) * | 2014-08-14 | 2017-04-19 | 株式会社韩国Alteco | 传导性复合物及其制备方法 |
CN106575536B (zh) * | 2014-08-14 | 2019-03-15 | 克雷托兹股份有限公司 | 传导性复合物及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
DE69942824D1 (de) | 2010-11-18 |
WO2000013190A1 (fr) | 2000-03-09 |
WO2000013190A8 (fr) | 2000-05-11 |
EP1050888A4 (en) | 2001-11-28 |
EP1050888A1 (en) | 2000-11-08 |
EP1050888B1 (en) | 2010-10-06 |
US6479763B1 (en) | 2002-11-12 |
CN1287672A (zh) | 2001-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1273993C (zh) | 导电粘结结构,含该结构的制品及其制造方法 | |
CN1160779C (zh) | 半导体元件安装板及其制造方法、半导体器件及其制造方法 | |
CN1044762C (zh) | 印刷电路板及其制造方法 | |
CN1265687C (zh) | 预浸料坯和电路基板以及它们的制造方法 | |
CN1184868C (zh) | 制造多层电路板组件的方法 | |
CN1174858C (zh) | 层压板 | |
CN1111574C (zh) | 小孔填充用的导电胶组合物及用它制作的双面及多层印刷电路板和它们的制备方法 | |
CN1294790C (zh) | 一种电子部件的生产方法及该方法生产的电子部件 | |
CN1812088A (zh) | 多层构造半导体微型组件及制造方法 | |
KR101054251B1 (ko) | 기판 표면 실장용 도전성 접촉 단자 | |
CN1578589A (zh) | 中间连接用配线基材、多层配线基板以及其制造方法 | |
CN1261007C (zh) | 线路板及其制造方法 | |
CN1574310A (zh) | 中间衬底及具有半导体元件、中间衬底和衬底的结构体 | |
KR20020034075A (ko) | 도전성 접착제와 전자 부품의 실장체 및 그 실장 방법 | |
EP1198162A2 (en) | Electronic component mounted member and repair method thereof | |
CN1434504A (zh) | 半导体装置及其制造方法和印刷掩膜 | |
JP2015162636A (ja) | 電子部品モジュールの製造方法 | |
KR101791285B1 (ko) | 이방성 도전막 및 그 제조 방법 | |
CN1294756A (zh) | 半导体装置、安装基板及其制造方法、电路基板和电子装置 | |
CN1252206C (zh) | 粘接剂和粘接膜 | |
CN1240261C (zh) | 多层布线电路基板的制造方法 | |
JP2006108523A (ja) | 異方性導電フィルムを用いた電気部品の接続方法 | |
CN1339049A (zh) | 导电性树脂、使用导电性树脂的电子器件的组装体及电子器件的组装体的制造方法 | |
CN1268180C (zh) | 电路衬底 | |
CN1101594C (zh) | 半导体单元的封装体、其封装方法及其封装材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060906 Termination date: 20140826 |
|
EXPY | Termination of patent right or utility model |