JP2006100775A - バンプ形成方法及びはんだバンプ - Google Patents
バンプ形成方法及びはんだバンプ Download PDFInfo
- Publication number
- JP2006100775A JP2006100775A JP2005091336A JP2005091336A JP2006100775A JP 2006100775 A JP2006100775 A JP 2006100775A JP 2005091336 A JP2005091336 A JP 2005091336A JP 2005091336 A JP2005091336 A JP 2005091336A JP 2006100775 A JP2006100775 A JP 2006100775A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resin
- bump
- solder powder
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- XOZUGNYVDXMRKW-AATRIKPKSA-N azodicarbonamide Chemical compound NC(=O)\N=N\C(N)=O XOZUGNYVDXMRKW-AATRIKPKSA-N 0.000 description 1
- 235000019399 azodicarbonamide Nutrition 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- H05K3/3485—Applying solder paste, slurry or powder
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/05573—Single external layer
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- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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Abstract
【解決手段】 複数の電極11が形成された基板10上に、はんだ粉及び対流添加剤12を含有する樹脂13を供給した後、基板10上に供給された樹脂13の表面を平板14で当接させながら、基板10をはんだ粉が溶融する温度に加熱する。この加熱工程において、溶融したはんだ粉を自己集合させるとともに、自己集合により成長したはんだ球15を、複数の電極11上に自己整合的に一括形成する。その後、平板14を樹脂13の表面から離間させて、樹脂13を除去すれば、複数の電極上にバンプ16が形成された基板10が得られる。
【選択図】 図1
Description
複数の電極が形成された基板を用意する工程と、
前記基板上に、はんだ粉及び対流添加剤を含有する樹脂を供給する工程と、
前記基板を前記はんだ粉が溶融する温度に加熱する工程と
を含む。前記加熱工程では、前記溶融したはんだ粉が前記電極上に自己集合し、それによって、前記電極上にバンプが形成される。尚、基板に供給する樹脂は、はんだ粉及び対流添加剤を含んで成る樹脂組成物であり、樹脂組成物を基板上に塗布して樹脂組成物を薄膜の形態で基板上に供給するのが好ましい。
また、上記溶剤はフラックス中に含まれていても対流添加剤としての効果が得られる。還元性材料および溶剤を含むフラックス等を使用する場合は、溶剤からだけではなく、導体パターン、導電粒子等の金属の酸化物の還元反応によって酸素の気泡が発生することがある。この場合、その気泡も対流添加剤の効果を発揮できるのでより好ましい。また、基板に含まれている水分も対流添加剤として作用し得る。
尚、フラックスを用いる場合には、その中に一般的に含まれている樹脂、活性剤、艶消し剤等を、本発明の方法に用いる樹脂は含んでよい。従って、本発明において、樹脂は、溶剤およびフラックスに含まれている溶剤以外の他の成分を含んでよい、即ち、樹脂はフラックスを含んでよい。
また、供給する樹脂(即ち、樹脂組成物)は、1つの実施形態において、その全体基準で、前記対流添加剤を、例えば0.1〜20重量%体積%、好ましくは1〜10重量%体積%の割合で含有している。尚、体積%は、室温(25℃)における体積を基準とする。尚、樹脂は、必要に応じて、他の成分、例えば上述のフラックスに含まれている成分等を必要量含んでよい。
樹脂:エポキシ樹脂
はんだ粉:SnAgCu(融点:220℃)
樹脂とはんだ粉の割合:50重量%:50重量%
プリント基板:松下電子部品(株)製ALIVH
(電極の直径およびピッチ:直径300μm、ピッチ500μm)
基板の加熱温度:250℃
対流添加剤:フラックスとして添加(沸点:170℃)
樹脂とはんだ粉とフラックスの割合:45重量%:50重量%:5重量%
他の条件は、図16の場合と同じ。
図1(a)〜(e)は、本発明の実施形態1におけるバンプ形成方法の基本的な工程を示した図である。
VA:VB≒SA:SB ・・・(1)
式(1)中、SAは基板10上の電極11の総面積、SBは基板10の面積をそれぞれ表す。
(はんだ粉の含有量、体積%)=VA/VB=SA/SB×100 ・・・(2)
(はんだ粉の含有量、体積%)=(SA/SB×100)+α ・・・(3)
式(3)中、αは、はんだ粉が基板10の電極11上に自己集合する際の過不足分を調整するためのパラメータで、種々の条件により決めることができ、最適な場合、αはゼロである。
図5に示した配置(エリアアレイ配置)・・・15〜30%体積%
このように、はんだ粉の含有量を少ない量に押さえることができるのは、樹脂13中に分散する対流添加剤の樹脂13中での対流によって奏される作用効果によるものに他ならない。なお、一般に、はんだ粉と樹脂または対流添加剤との重量比は約7程度なので、上記0.5〜30体積%の割合は、概ね3〜75重量%の割合に相当する。
以下に、上述した実施形態1に対する種々の改変例に係る実施形態2について、図面を参照しながら説明をする。
1)配線基板の電極上にはんだバンプを形成する工程、
2)半導体チップを配線基板上に搭載し、はんだリフローによりバンプを介して電極間の接合を行なう工程、
3)配線基板と半導体チップ間にアンダーフィル材を注入して、半導体チップを固定する工程、
の3つの異なる工程を要する。
11、21 電極
12 対流添加剤
13 樹脂
14 平板
15、32、71 はんだ球
16 バンプ
20、70 半導体チップ
21 電極
22 アンダーフィル材
30 金属パターン
31 蒸気
35 対流の様子
60 金属膜
61 膜
71 電極端子
Claims (30)
- バンプを形成する方法であって、
(1)複数の電極が形成された基板を用意する工程と、
(2)前記基板上に、はんだ粉及び対流添加剤を含有する樹脂を供給する工程と、
(3)前記基板を前記はんだ粉が溶融する温度に加熱する工程と
を含む、前記電極上にバンプを形成する方法。 - 前記基板を加熱する工程(3)は、前記対流添加剤の沸点よりも高い温度で行なわれることを特徴とする、請求項1に記載のバンプ形成方法。
- 前記基板を加熱する工程(3)において、前記沸騰した対流添加剤は、前記樹脂中を対流することを特徴とする、請求項2に記載のバンプ形成方法。
- 前記基板を加熱する工程(3)において、前記はんだ粉は、溶融状態で前記樹脂中を対流することを特徴とする、請求項1〜3のいずれか一つに記載のバンプ形成方法。
- 前記対流添加剤は、溶剤、グリセリン、ワックス、イソプロピルアルコール、酢酸ブチル、ブチルカルビトールおよびエチレングリコールよりなる群から選ばれた1種もしくは2種以上からなることを特徴とする、請求項1〜4のいずれか一つに記載のバンプ形成方法。
- 前記はんだ粉は、略同一の粒径を有していることを特徴とする、請求項1〜5のいずれか一つに記載のバンプ形成方法。
- 前記基板を加熱する工程(3)において、前記基板上に供給された前記樹脂表面に平板を当接させながら、前記基板を加熱することを特徴とする、請求項1〜6のいずれか一つに記載のバンプ形成方法。
- 前記基板上に形成された電極と前記平板との間に、一定の幅の隙間が形成されるように平板を保持することを特徴とする、請求項7に記載のバンプ形成方法。
- 前記基板を加熱する工程(3)において、前記基板上に形成された電極と前記平板との間に設けられた一定の隙間は、前記はんだ粉の粒径よりも広いことを特徴とする請求項8に記載のバンプ形成方法。
- 前記基板を加熱する工程(3)において、前記平板に一定の圧力を加えることによって、前記樹脂を押圧しながら、前記基板を加熱することを特徴とする、請求項7に記載のバンプ形成方法。
- 前記基板を加熱する工程(3)において、前記沸騰した対流添加剤は、前記基板と前記平板との間に設けられた隙間の周辺部から、外部に蒸発することを特徴とする、請求項7〜10のいずれかに記載のバンプ形成方法。
- 前記平板の前記基板に対向する平面上に、前記基板に形成された複数の電極と対向する位置に、前記電極と略同一形状の金属パタ−ンが形成されていることを特徴とする、請求項1〜11のいずれか一つに記載のバンプ形成方法。
- 前記基板を加熱する工程(3)において、前記電極上にバンプが形成された後、平板を除去することを特徴とする、請求項7〜12のいずれか一つに記載のバンプ形成方法。
- 前記基板を冷却することなく、前記平板を除去し、前記電極上に、前記電極と前記平板と間に設けられた隙間の間隔よりも高いバンプを形成することを特徴とする、請求項13に記載のバンプ形成方法。
- 前記基板を加熱する工程(3)の後、前記基板を冷却する工程を更に含み、
前記基板の冷却後、前記樹脂表面に当接されている平板を、前記樹脂表面から離間させることを特徴とする、請求項7〜13に記載のバンプ形成方法。 - 前記基板を加熱する工程(3)の後、前記基板を冷却する工程を含み、
前記基板の冷却後、前記樹脂を除去する工程を含むことを特徴とする、請求項1〜15のいずれか一つに記載のバンプ形成方法。 - 前記基板を加熱する工程(3)は、前記樹脂の粘度が低下する温度で行われることを特徴とする、請求項1〜17のいずれか一つに記載のバンプ形成方法。
- 前記基板上への樹脂の供給工程(1)において、前記樹脂は、少なくとも前記基板に形成された複数の電極を覆うように供給され、
前記基板を加熱する工程(3)において、前記溶融したはんだ粉を前記電極上に自己集合させることによって、前記電極上のみにバンプが形成されることを特徴とする、請求項1〜17のいずれかに記載のバンプ形成方法。 - 前記複数の電極の表面に、前記はんだ粉に対して、ぬれ性の大きい金属膜が形成されていることを特徴とする、請求項1〜18のいずれか一つに記載のバンプ形成方法。
- 前記複数の電極が形成されていない前記基板の表面は、前記はんだ粉に対して、ぬれ性の低い膜が形成されていることを特徴とする、請求項1〜19のいずれか一つに記載のバンプ形成方法。
- 前記平板は、前記はんだ粉に対して、ぬれ性の低い材料でできていることを特徴とする、請求項7〜15のいずれか一つに記載のバンプ形成方法。
- 前記はんだ粉は、鉛フリーはんだ材料からなることを特徴とする、請求項1〜21のいずれか一つに記載のバンプ形成方法。
- 前記はんだ粉は、0.5〜30体積%の割合で、前記樹脂中に含有されていることを特徴とする、請求項1〜22のいずれか一つに記載のバンプ形成方法。
- 基板表面に形成された複数の電極上に形成されたはんだバンプであって、
前記はんだバンプは、前記基板上に供給された、はんだ粉および対流添加剤を含有する樹脂中のはんだ粉が溶融して、前記電極上に自己集合して形成されたものであることを特徴とするはんだバンプ。 - 前記基板が、配線基板または半導体チップであることを特徴とする、請求項24に記載のはんだバンプ。
- 前記はんだ粉は、鉛フリーはんだ材料からなることを特徴とする、請求項24または25に記載のはんだバンプ。
- 基板または半導体チップの電極上へのバンプ形成に用いるバンプ形成用樹脂組成物であって、
はんだ粉と対流添加剤を含有している樹脂から成ることを特徴とするバンプ形成用樹脂組成物。 - 前記対流添加剤の沸点は、前記はんだ粉の融点よりも低いことを特徴とする、請求項27に記載のバンプ形成用樹脂組成物。
- 前記対流添加剤は、溶剤、グリセリン、ワックス、イソプロピルアルコール、酢酸ブチル、ブチルカルビトールおよびエチレングリコールよりなる群から選ばれた1種もしくは2種以上からなることを特徴とする、請求項27または28に記載のバンプ形成用樹脂組成物。
- 樹脂は、熱硬化性樹脂、熱可塑性樹脂、または光硬化性樹脂のいずれか一つを主成分とすることを特徴とする、請求項27〜29のいずれか一つに記載のバンプ形成用樹脂組成物。
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JP4084835B2 (ja) * | 2005-03-29 | 2008-04-30 | 松下電器産業株式会社 | フリップチップ実装方法および基板間接続方法 |
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KR101175482B1 (ko) * | 2005-04-06 | 2012-08-20 | 파나소닉 주식회사 | 플립 칩 실장 방법 및 범프 형성 방법 |
JP4402718B2 (ja) * | 2005-05-17 | 2010-01-20 | パナソニック株式会社 | フリップチップ実装方法 |
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WO2007108290A1 (ja) * | 2006-03-16 | 2007-09-27 | Matsushita Electric Industrial Co., Ltd. | バンプ形成方法およびバンプ形成装置 |
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US8297488B2 (en) | 2006-03-28 | 2012-10-30 | Panasonic Corporation | Bump forming method using self-assembling resin and a wall surface |
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JP4902867B2 (ja) * | 2006-04-19 | 2012-03-21 | パナソニック株式会社 | 電子部品の接続方法及び突起電極の形成方法、並びに電子部品実装体及び突起電極の製造装置 |
US20090057378A1 (en) * | 2007-08-27 | 2009-03-05 | Chi-Won Hwang | In-situ chip attachment using self-organizing solder |
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US9656353B2 (en) | 2011-10-26 | 2017-05-23 | Hitachi Chemical Company, Ltd. | Reflow film, solder bump formation method, solder joint formation method, and semiconductor device |
JP2013224362A (ja) * | 2012-04-20 | 2013-10-31 | Nitto Denko Corp | 接合シート、電子部品およびそれらの製造方法 |
KR101940237B1 (ko) | 2012-06-14 | 2019-01-18 | 한국전자통신연구원 | 미세 피치 pcb 기판에 솔더 범프 형성 방법 및 이를 이용한 반도체 소자의 플립 칩 본딩 방법 |
KR101988890B1 (ko) * | 2012-10-30 | 2019-10-01 | 한국전자통신연구원 | 솔더 온 패드의 제조방법 및 그를 이용한 플립 칩 본딩 방법 |
US9437566B2 (en) | 2014-05-12 | 2016-09-06 | Invensas Corporation | Conductive connections, structures with such connections, and methods of manufacture |
US9793198B2 (en) | 2014-05-12 | 2017-10-17 | Invensas Corporation | Conductive connections, structures with such connections, and methods of manufacture |
US20170216947A1 (en) * | 2014-07-28 | 2017-08-03 | Xin Yang | Systems and methods for reinforced adhesive bonding |
US9331043B1 (en) | 2015-01-30 | 2016-05-03 | Invensas Corporation | Localized sealing of interconnect structures in small gaps |
JP2017108046A (ja) * | 2015-12-11 | 2017-06-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102315634B1 (ko) * | 2016-01-13 | 2021-10-22 | 삼원액트 주식회사 | 회로 기판 |
JP6945276B2 (ja) * | 2016-03-31 | 2021-10-06 | デクセリアルズ株式会社 | 異方性導電接続構造体 |
AT518666B1 (de) * | 2016-09-21 | 2017-12-15 | Zkw Group Gmbh | Kraftfahrzeug-Scheinwerfer |
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Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0747233B2 (ja) | 1987-09-14 | 1995-05-24 | 古河電気工業株式会社 | 半田析出用組成物および半田析出方法 |
JPH02251145A (ja) * | 1989-03-24 | 1990-10-08 | Citizen Watch Co Ltd | 突起電極形成方法 |
JP3214995B2 (ja) * | 1993-12-28 | 2001-10-02 | 株式会社日立製作所 | 電子回路の製造方法 |
US5062896A (en) * | 1990-03-30 | 1991-11-05 | International Business Machines Corporation | Solder/polymer composite paste and method |
JPH06125169A (ja) * | 1992-10-13 | 1994-05-06 | Fujitsu Ltd | 予備はんだ法 |
US5346558A (en) * | 1993-06-28 | 1994-09-13 | W. R. Grace & Co.-Conn. | Solderable anisotropically conductive composition and method of using same |
JP3537871B2 (ja) | 1993-07-05 | 2004-06-14 | 昭和電工株式会社 | はんだコートおよびその形成方法 |
DE69942824D1 (de) * | 1998-08-28 | 2010-11-18 | Panasonic Corp | Leitfähige paste, diese verwendende elektrisch leitfähige struktur, elektrisches bauteil, modul, leiterplatte, verfahren zum elektrischen verbinden, verfahren zur herstellung von einer leiterplatte he |
JP3996276B2 (ja) * | 1998-09-22 | 2007-10-24 | ハリマ化成株式会社 | ソルダペースト及びその製造方法並びにはんだプリコート方法 |
US6402013B2 (en) * | 1999-12-03 | 2002-06-11 | Senju Metal Industry Co., Ltd | Thermosetting soldering flux and soldering process |
JP2001219294A (ja) | 1999-12-03 | 2001-08-14 | Tdk Corp | 熱硬化性はんだ付け用フラックスおよびはんだ付け方法 |
JP3423930B2 (ja) * | 1999-12-27 | 2003-07-07 | 富士通株式会社 | バンプ形成方法、電子部品、および半田ペースト |
JP2001329048A (ja) | 2000-03-15 | 2001-11-27 | Harima Chem Inc | 封止充填剤用液状エポキシ樹脂組成物 |
JP3615206B2 (ja) * | 2001-11-15 | 2005-02-02 | 富士通株式会社 | 半導体装置の製造方法 |
CN100409423C (zh) * | 2003-02-05 | 2008-08-06 | 千住金属工业株式会社 | 端子间的连接方法及半导体装置的安装方法 |
JP3769688B2 (ja) | 2003-02-05 | 2006-04-26 | 独立行政法人科学技術振興機構 | 端子間の接続方法及び半導体装置の実装方法 |
JP4130668B2 (ja) * | 2004-08-05 | 2008-08-06 | 富士通株式会社 | 基体の加工方法 |
US20060027936A1 (en) * | 2004-08-05 | 2006-02-09 | Fujitsu Limited | Method for processing base |
CN100495677C (zh) * | 2005-03-29 | 2009-06-03 | 松下电器产业株式会社 | 倒装芯片封装方法及其焊锡点形成方法 |
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2005
- 2005-03-28 JP JP2005091336A patent/JP3964911B2/ja not_active Expired - Fee Related
- 2005-08-30 KR KR1020077004833A patent/KR101139050B1/ko active IP Right Grant
- 2005-08-30 WO PCT/JP2005/015765 patent/WO2006025387A1/ja active Application Filing
- 2005-08-30 US US11/661,821 patent/US7799607B2/en not_active Expired - Fee Related
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JP4702271B2 (ja) * | 2006-11-30 | 2011-06-15 | パナソニック株式会社 | 導電性バンプの形成方法 |
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CN101853794A (zh) * | 2009-03-24 | 2010-10-06 | 松下电器产业株式会社 | 电子元器件接合方法和凸点形成方法及其装置 |
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JP2011233550A (ja) * | 2010-04-23 | 2011-11-17 | Hitachi Chem Co Ltd | リフローフィルム、及びそれを用いた半田バンプの形成方法、電極間の接合方法 |
JP2016143741A (ja) * | 2015-01-30 | 2016-08-08 | 国立大学法人大阪大学 | 電子部品の実装方法、電子部品付き基板およびその接合層、ならびに接合用材料層付き基板およびシート状接合用部材 |
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EP1796155A1 (en) | 2007-06-13 |
EP1796155A4 (en) | 2009-09-16 |
KR20070048219A (ko) | 2007-05-08 |
US7799607B2 (en) | 2010-09-21 |
JP3964911B2 (ja) | 2007-08-22 |
KR101139050B1 (ko) | 2012-04-30 |
WO2006025387A1 (ja) | 2006-03-09 |
US20070257362A1 (en) | 2007-11-08 |
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