CN102549091A - 粘合膜、多层电路基板、电子部件和半导体装置 - Google Patents
粘合膜、多层电路基板、电子部件和半导体装置 Download PDFInfo
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- CN102549091A CN102549091A CN2010800409600A CN201080040960A CN102549091A CN 102549091 A CN102549091 A CN 102549091A CN 2010800409600 A CN2010800409600 A CN 2010800409600A CN 201080040960 A CN201080040960 A CN 201080040960A CN 102549091 A CN102549091 A CN 102549091A
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
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Abstract
本发明使粘合膜为含有(A)热固化性树脂、(B)固化剂、(C)助焊剂活性化合物和(D)成膜性树脂的构成,另外该粘合膜的最低熔融粘度是0.01~10000Pa·S,并且,将该粘合膜的发热峰值温度定义为(a)、将该粘合膜的5%重量加热损失温度定义为(b)时,满足下述式(1):(b)-(a)≥100℃(1)。
Description
技术领域
本发明涉及粘合膜、多层电路基板、电子部件和半导体装置。
背景技术
伴随着近年来电子设备的高功能化和轻薄短小化的要求,半导体封装等电子部件的高密度集成化、高密度贴装化不断发展,这些电子部件的小型化、多管脚化不断进步。为了得到这些电子部件的电连接,可使用焊锡接合。
作为焊锡接合,例如可举出半导体芯片之间的导通接合部、以倒装片搭载的封装之类的半导体芯片和电路基板间的导通接合部、电路基板彼此的导通接合部等。在该焊锡接合部,为了确保电连接强度和机械连接强度,通常注入被称为底部填充材料的密封树脂(底部填充密封)。
当用液状密封树脂(底部填充材料)强化在该焊锡接合部出现的空隙(间隙)时,通过在焊锡接合后供给液状密封树脂(底部填充材料)、将其固化从而强化焊锡接合部。但是,因为伴随着电子部件的薄化、小型化,焊锡接合部窄间距化/窄间隙化,所以产生了即使在焊锡接合后供给液状密封树脂(底部填充材料)、液状密封树脂(底部填充材料)也无法流到到间隙间、难以完全填充的问题。
对于这样的问题,已知有介由各向异性导电膜一并进行端子间的电连接和粘合的方法。例如记载有通过在部件间介入含有焊料粒子的粘合膜并热压合从而在两部件的端子间介入焊料粒子、在其它部分填充树脂成分的方法,通过使金属粒子接触从而取得电连接的方法(例如,专利文献1、2)。
现有技术文献
专利文献
专利文献1:日本特开昭61-276873号公报
专利文献2:日本特开平9-31419号公报
发明内容
但是,该方法中,由于在相邻端子间存在导电性粒子,所以难以确保相邻端子间的绝缘性,由于在相邻端子间存在气泡,所以难以确保电子部件、半导体装置的可靠性。
本发明的目的在于提供既能密封对置的部件的端子间的连接和部件间的空隙又能兼顾良好的导通连接性和绝缘可靠性的粘合膜、以及使用该粘合膜的多层电路基板、电子部件和半导体装置。
这种目的可通过下述[1]~[14]达成。
[1]一种粘合膜,其特征在于,是将支撑体的第一端子和被粘物的第二端子使用焊料进行电连接、将该支撑体和该被粘物粘合的粘合膜,其含有(A)热固化性树脂、(B)固化剂、(C)助焊剂活性化合物和(D)成膜性树脂,该粘合膜的最低熔融粘度是0.01~10000Pa·s,并且,将该粘合膜的发热峰值温度(℃)定义为(a)、将该粘合膜的5%重量加热损失温度(℃)定义为(b)时,满足下述式(1)。
(b)-(a)≥100℃(1)
[2]如[1]所述的粘合膜,其中,(A)热固化性树脂和(C)助焊剂活性化合物的配合比((A)/(C))是0.5~20。
[3]如[1]或[2]所述的粘合膜,其中,相对于所述粘合膜,(A)热固化性树脂的含量是5~80重量%。
[4]如[1]~[3]中任一项所述的粘合膜,其中,(A)热固化性树脂是环氧树脂。
[5]如[1]~[4]中任一项所述的粘合膜,其中,(C)助焊剂活性化合物是具有羧基和/或酚羟基的助焊剂活性化合物。
[6]如[1]~[4]中任一项所述的粘合膜,其中,(C)助焊剂活性化合物是1分子中具有2个酚羟基和至少1个与芳香族直接结合的羧基的助焊剂活性化合物。
[7]如[1]~[6]中任一项所述的粘合膜,其中,(C)助焊剂活性化合物含有下述通式(2)表示的化合物。
HOOC-(CH2)n-COOH(2)
(通式(2)中,n是1~20的整数。)
[8]如[1]~[6]中任一项所述的粘合膜,其中,(C)助焊剂活性化合物含有下述通式(3)和/或(4)表示的化合物。
(通式(3)中,R1~R5各自独立地是1价有机基团,R1~R5的至少一个是羟基。)
(通式(4)中,R6~R20各自独立地是1价有机基团,R6~R20的至少一个是羟基或羧基。)
[9]如[1]~[8]中任一项所述的粘合膜,其中,所述粘合膜还含有(G)填充材料。
[10]如[9]所述的粘合膜,其中,相对于所述粘合膜,(G)填充材料的含量是0.1重量%~80重量%。
[11]如[1]~[10]中任一项所述的粘合膜,其中,所述粘合膜还含有相对于所述粘合膜为0.01重量%~5重量%的(F)硅烷偶联剂。
[12]一种多层电路基板,其特征在于,具有[1]~[11]中任一项所述的粘合膜的固化物。
[13]一种电子部件,其特征在于,具有[1]~[11]中任一项所述的粘合膜的固化物。
[14]一种半导体装置,其特征在于,具有[1]~[11]中任一项所述的粘合膜的固化物。
根据本发明,可提供既能密封对置的部件的端子间的连接和部件间的空隙又可兼得良好的导通连接性和绝缘可靠性的粘合膜、以及使用该粘合膜的多层电路基板、电子部件和半导体装置。
附图说明
[图1]是表示使用了本发明粘合膜的半导体装置的制造方法的一例的工序截面图。
具体实施方式
以下,对本发明的粘合膜、多层电路基板、电子部件和半导体装置进行说明。
本发明的粘合膜,其特征在于,是将支撑体的第一端子和被粘物的第二端子使用焊料进行电连接、将该支撑体和该被粘物粘合的粘合膜,其含有(A)热固化性树脂、(B)固化剂、(C)助焊剂活性化合物和(D)成膜性树脂,该粘合膜的最低熔融粘度是0.01~10000Pa·s,并且,将该粘合膜的发热峰值温度(℃)定义为(a)、将该粘合膜的5%重量加热损失温度(℃)定义为(b)时,满足下述式(1)。
(b)-(a)≥100℃(1)
另外,本发明的多层电路基板、电子部件和半导体装置是使用上述粘合膜将具有第一端子的支撑体和具有第二端子的被粘物电连接、将该支撑体和该被粘物粘合而得的。
以下,详细地说明本发明的粘合膜、多层电路基板、电子部件和半导体装置。
(粘合膜)
本发明的粘合膜的最低熔融粘度是0.01~10000Pa·s。通过使粘合膜的最低熔融粘度为0.01~10000Pa·s,从而可以在对置的支撑体的第一端子和被粘物的第二端子之间介入粘合膜,通过使粘合膜加热熔融,将支撑体和被粘物电连接,进而可在粘合时确保良好的连接可靠性。
通过使最低熔融粘度为0.01Pa·s以上,从而可以防止熔融的粘合膜爬上并污染支撑体或被粘物。另外,通过使最低熔融粘度为10000Pa·s以下,从而可以防止在对置的端子间啮入熔融的粘合膜、发生导通不良。
最低熔融粘度优选是0.02Pa·s以上,特别优选是0.05Pa·s以上。由此,可更有效地防止熔融的粘合膜爬上并污染支撑体或被粘物。另外,最低熔融粘度优选是8000Pa·s以下,特别优选是7000Pa·s以下。由此,可更有效地防止在对置的端子间啮入熔融的粘合膜、发生导通不良。
在此,粘合膜的最低熔融粘度可以使用粘弹性测定装置(HAKKE公司制“RheoStress RS150”),以平行板20mmφ、间隙0.05mm、频率0.1Hz、升温速度10℃/分钟的条件来进行测定。
作为使粘合膜的熔融粘度在上述范围的方法,没有特别限定,可通过适当选择作为粘合膜的构成成分的(A)热固化性树脂、(B)固化剂、(D)成膜性树脂的软化点、配合量而进行。
另外,将粘合膜的发热峰值温度定义为(a)、将该粘合膜的5%重量加热损失温度定义为(b)时,满足下述式(1)。由此,可以在对置的支撑体的第一端子和被粘物的第二端子之间介入粘合膜,通过使粘合膜加热熔融,将支撑体和被粘物电连接,进而可以在粘合时防止气泡产生,所以能提高所制作的多层电路基板、电子部件、半导体装置的可靠性。
(b)-(a)≥100℃(1)
在本发明中,发热峰值温度(a)是表示粘合膜的固化行为的物性之一。因为发热峰值温度(a)低时容易发生固化反应,所以有时阻碍电极彼此的抵接、寿命(保存性)下降。相反,如果发热峰值温度(a)过高,则产生用于固化的加热温度变高的问题。
另一方面,在本发明中,5%重量加热损失温度(b)是表示粘合膜的耐热性的物性之一。5%重量加热损失温度(b)越高,耐热性越高,因而优选。另外,5%重量加热损失温度(b)低表示因加热导致的分解物和挥发物多。即,5%重量加热损失温度(b)越低,在固化后的粘合膜中空隙(气泡)的原因越增加,越容易产生空隙。
因此,通过使粘合膜的5%重量加热损失温度(b)和发热峰值温度(a)的差为100℃以上,从而既可以按照粘合膜的固化反应不过分进行的方式使粘合膜加热熔融而将支撑体和被粘物电连接,又可以在其后使粘合膜加热、固化而将支撑体和被粘物粘合。另外,通过设为100℃以上,从而能确保该工序的宽裕度、能更加减少空隙的产生。
因此,粘合膜的5%重量加热损失温度(b)和发热峰值温度(a)的差越大,通过加热粘合膜而产生的排气就越难以发生,因而可以防止电连接和粘合后的气泡的产生。另外,即使发生排气时,也因为开始发生排气的温度比粘合膜的固化反应开始的温度高、也因为在粘合膜的固化进行后发生排气,所以排气难以在三维化的粘合膜中移动。由此,可以防止电连接和粘合后的气泡的产生。
粘合膜的5%重量加热损失温度(b)和发热峰值温度(a)的差优选是120℃以上,特别优选是150℃以上。由此,可以更有效地防止粘合膜的排气的发生。另外,即使假设发生排气,也因为排气难以在粘合膜中移动,所以能更有效地防止电连接和粘合后的气泡的产生。
在此,粘合膜的发热峰值温度(a)可以使用差示扫描量热计(SeikoInstruments株式会社制、DSC-6200)以升温速度10℃/分钟来进行测定。
另外,粘合膜的5%重量加热损失温度(b)可使用热重量/差示热同时测定装置(Seiko Instruments株式会社制、TG/DTA6200)以升温速度10℃/分钟来进行测定。
作为使粘合膜的5%重量加热损失温度(b)和发热峰值温度(a)的差在上述范围的方法,没有特别限定,可通过适当调整(A)热固化性树脂、(B)固化剂、(C)助焊剂活性化合物中的软化点、含量以及低分子成分的含量来进行。
本发明的粘合膜含有(A)热固化性树脂、(B)固化剂、(C)助焊剂活性化合物、和(D)成膜性树脂。以下,对各成分进行说明。
(A)热固化性树脂
(A)热固化性树脂没有特别限定,例如可举出环氧树脂、苯氧基树脂、硅酮树脂、氧杂环丁烷树脂、酚醛树脂、(甲基)丙烯酸酯树脂、聚酯树脂(不饱和聚酯树脂)、邻苯二甲酸二烯丙酯树脂、马来酰亚胺树脂、聚酰亚胺树脂(聚酰亚胺前体树脂)、双马来酰亚胺-三嗪树脂等。特别优选使用含有选自环氧树脂、(甲基)丙烯酸酯树脂、苯氧基树脂、聚酯树脂、聚酰亚胺树脂、硅酮树脂、马来酰亚胺树脂、双马来酰亚胺-三嗪树脂中的至少1种的热固化性树脂。其中,从固化性和保存性、固化物的耐热性、耐湿性、耐试剂性优异的观点出发,优选环氧树脂。另外,这些热固化性树脂可以单独使用1种,也可以并用2种以上。
(A)热固化性树脂的含量没有特别限定,优选相对于粘合膜为5~80重量%,更优选为9~75重量%,特别优选为10~55重量%。通过使(A)热固化性树脂的含量在上述下限值以上,从而固化后的粘合膜的耐热性提高,所以能提高多层电路基板、电子部件和半导体装置的可靠性。另外,通过设为上述上限值以下,从而能防止固化后的粘合膜的弹性模量变得过高,所以可提高支撑体和被粘物的粘合性。
作为上述环氧树脂,没有特别限制,例如可举出双酚A型环氧树脂、双酚F型环氧树脂、苯酚酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂、缩水甘油胺型环氧树脂、缩水甘油酯型环氧树脂、3官能环氧树脂、4官能环氧树脂等。
另外,作为上述环氧树脂,优选25℃的粘度是500~50000mPa·s,进而更优选800~40000mPa·s。通过使25℃的粘度在上述下限值以上,从而能确保粘合膜的柔软性和弯曲性。另外,通过使25℃的粘度在上述上限值以下,从而能防止粘合膜的粘性变强、处理性下降。
另外,上述环氧树脂的含量没有特别限定,优选相对于粘合膜为5~80重量%,特别优选为9~75重量%。通过在上述下限值以上,从而能更有效地体现粘合膜的柔软性和弯曲性。另外,通过设为上述上限值以下,从而能更有效地防止粘合膜的粘性变强、处理性下降。
在上述环氧树脂中,从将粘合膜的熔融粘度调整到0.01~10000Pa·s范围时能兼得粘合膜的操作性(粘性、弯曲性)的观点出发,优选液状的双酚A型环氧树脂、液状的双酚F型环氧树脂。
(B)固化剂
(B)固化剂没有特别限定,可根据使用的(A)热固化性树脂的种类而适当选择。作为(B)固化剂,例如可举出酚类、胺类、硫醇类、酸酐类、异氰酸酯类等,可以单独使用1种,也可以并用2种以上。
当使用环氧树脂作为(A)热固化性树脂时,作为(B)固化剂,优选酚类。通过使用酚类作为(B)固化剂,从而能提高固化后的粘合膜的耐热性、进而能降低吸水率,所以可提高多层电路基板、电子部件和半导体装置的可靠性。
作为上述酚类,没有特别限定,可举出苯酚酚醛清漆树脂、甲酚酚醛清漆树脂、双酚A型酚醛清漆树脂、双酚F型酚醛清漆树脂、双酚AF型酚醛清漆树脂等,优选能有效地提高粘合膜的固化物的玻璃化转变温度、另外能减少成为排气的成分的苯酚酚醛清漆树脂、甲酚酚醛清漆树脂。
优选上述苯酚酚醛清漆树脂或甲酚酚醛清漆树脂中的1核体~3核体的合计含量是30~70%。由此,能够提高粘合膜的固化物的玻璃化转变温度以及减少成为排气的苯酚系酚醛清漆树脂的量,可提高耐离子迁移性。另外,因为能对粘合膜赋予适度的柔软性,所以可以改善粘合膜的脆性。另外,因为能对粘合膜赋予适度的粘性,所以可得到操作性优异的粘合膜。
当1核体~3核体的合计含量小于30%(4核体以上的合计含量是70%以上)时,与上述环氧树脂的反应性下降、未反应的苯酚系酚醛清漆树脂残留在粘合膜的固化物中,所以出现耐迁移性下降、另外粘合膜变脆、操作性下降的问题。另外,当1核体~3核体的合计含量大于70%(4核体以上的合计含量是30%以下)时,产生使粘合膜固化时的排气量增大、污染支撑体或被粘物的表面、耐迁移性下降、另外粘合膜的粘性变大、粘合膜的操作性下降的问题。
上述苯酚酚醛清漆树脂或甲酚酚醛清漆树脂中的2核体和3核体的合计含量没有特别限定,优选是30~70%。通过设为上述下限值以上,从而能更有效地防止使粘合膜固化时的排气量增大、污染支撑体或被粘物的表面。另外,通过设为上述上限值以下,从而能更有效地确保粘合膜的柔软性和弯曲性。
上述苯酚酚醛清漆树脂或甲酚酚醛清漆树脂中的1核体的含量没有特别限定,优选在粘合膜中是1%以下,特别优选是0.8%以下。通过使1核体的含量在上述范围,从而能减少使粘合膜固化时的排气量、能抑制支撑体或被粘物的污染、另外能提高耐迁移性。
上述苯酚酚醛清漆树脂或甲酚酚醛清漆树脂的重均分子量没有特别限定,优选是300~3000,特别优选是400~2800。通过设为上述下限值以上,从而能更有效地防止使粘合膜固化时的排气量增大、污染支撑体或被粘物的表面。另外,通过设为上述上限值以下,从而能更有效地确保粘合膜的柔软性和弯曲性。
(C)助焊剂活性化合物
本发明的粘合膜含有(C)助焊剂活性化合物。由此,能除去支撑体的第一端子和被粘物的第二端子的至少一方的焊料表面的氧化膜,另外根据情况能除去支撑体的第一端子或被粘物的第二端子表面的氧化膜,能确实地将第一端子和第二端子焊锡接合,所以可得到连接可靠性高的多层电路基板、电子部件、半导体装置等。
作为(C)助焊剂活性化合物,只要有除去焊料表面的氧化膜的作用,则没有特别限定,优选具备羧基或酚羟基中的任一个、或者具备羧基和酚羟基两者的化合物。
(C)助焊剂活性化合物的配合量优选是1~30重量%,特别优选是3~20重量%。通过使(C)助焊剂活性化合物的配合量在上述范围,从而能提高助焊剂活性,而且在使粘合膜固化时,能防止未反应的(A)热固化性树脂、(C)助焊剂活性化合物残留而使粘合膜热固化时发生排气,能提高耐迁移性。
另外,在作为环氧树脂的固化剂发挥作用的化合物中,存在(C)助焊剂活性化合物(以下,将这种化合物也记为助焊剂活性固化剂)。例如,作为环氧树脂的固化剂发挥作用的脂肪族二羧酸、芳香族二羧酸等也具有助焊剂作用。本发明中,可优选使用这种作为助焊剂起作用、也作为环氧树脂的固化剂起作用的助焊剂活性固化剂。
应予说明,具备羧基的(C)助焊剂活性化合物是指分子中存在1个以上羧基的化合物,在室温下可以是液状也可以是固体。另外,具备酚羟基的(C)助焊剂活性化合物是指分子中存在1个以上酚羟基的化合物,在室温下可以是液状也可以是固体。另外,具备羧基和酚羟基的(C)助焊剂活性化合物是指分子中各存在1个以上羧基和酚羟基的化合物,在室温下可以是液状也可以是固体。
它们中,作为具备羧基的(C)助焊剂活性化合物,可举出脂肪族酸酐、脂环式酸酐、芳香族酸酐、脂肪族羧酸、芳香族羧酸等。
作为具备羧基的(C)助焊剂活性化合物中的脂肪族酸酐,可举出琥珀酸酐、聚己二酸酐、聚壬二酸酐、聚癸二酸酐等。
作为具备羧基的(C)助焊剂活性化合物中的脂环式酸酐,可举出甲基四氢邻苯二甲酸酐、甲基六氢邻苯二甲酸酐、甲基降冰片烯二酸酐、六氢邻苯二甲酸酐、四氢邻苯二甲酸酐、三烷基四氢邻苯二甲酸酐、甲基环己烯二羧酸酐等。
作为具备羧基的(C)助焊剂活性化合物中的芳香族酸酐,可以举出邻苯二甲酸酐、偏苯三酸酐、均苯四酸二酐、二苯甲酮四羧酸酐、乙二醇双偏苯三酸酯、丙三醇三偏苯三酸酯等。
作为具备羧基的(C)助焊剂活性化合物中的脂肪族羧酸,可以举出下述通式(2)所示的化合物或甲酸、乙酸、丙酸、丁酸、戊酸、三甲基乙酸、己酸、辛酸、月桂酸、肉豆蔻酸、棕榈酸、硬脂酸、丙烯酸、甲基丙烯酸、巴豆酸、油酸、富马酸、马来酸、草酸、丙二酸、琥珀酸等。
HOOC-(CH2)n-COOH(2)
(通式(2)中,n表示1~20的整数。)
在上述脂肪族羧酸中,从(C)助焊剂活性化合物具有的活性、粘合膜固化时的排气的发生量、以及固化后的粘合膜的弹性模量、玻璃化转变温度等的平衡良好的方面看,优选通式(2)表示的化合物。接着,从能抑制固化后的粘合膜的弹性模量增加且能提高支撑体和被粘物的粘合性的方面看,特别优选通式(2)表示的化合物中n为3~10的化合物。
作为通式(2)表示的化合物中n为3~10的化合物,例如可举出n=3的戊二酸(HOOC-(CH2)3-COOH)、n=4的己二酸(HOOC-(CH2)4-COOH)、n=5的庚二酸(HOOC-(CH2)5-COOH)、n=8的癸二酸(HOOC-(CH2)8-COOH)和n=10的HOOC-(CH2)10-COOH等。
作为具备羧基的(C)助焊剂活性化合物中的芳香族羧酸,例如可举出下述通式(3)或(4)表示的(C)助焊剂活性化合物。
(通式(3)中,R1~R5各自独立地是1价的有机基团,R1~R5中的至少一个是羟基。)
(通式(4)中,R6~R20各自独立地是1价的有机基团,R6~R20的至少一个是羟基或羧基。)
作为上述芳香族羧酸,例如可以举出苯甲酸、邻苯二甲酸、间苯二甲酸、对苯二甲酸、连苯三酸、偏苯三酸、均苯三酸、苯偏四酸、连苯四酸、均苯四甲酸、苯六甲酸、甲苯甲酸、二甲苯甲酸、2,3-二甲基苯甲酸、3,5-二甲基苯甲酸、2,3,4-三甲基苯甲酸、甲基苯甲酸、肉桂酸、水杨酸、2,3-二羟基苯甲酸、2,4-二羟基苯甲酸、龙胆酸(2,5-二羟基苯甲酸)、2,6-二羟基苯甲酸、3,5-二羟基苯甲酸、没食子酸(3,4,5-三羟基苯甲酸)、1,4-二羟基-2-萘甲酸、3,5-二羟基-2-萘甲酸等萘甲酸衍生物;酚酞;双酚酸等。
在通式(3)或(4)表示的(C)助焊剂活性化合物中,从提高固化后的环氧树脂的三维网络的形成的观点出发,优选1分子中具备能加成到环氧树脂上的2个以上酚羟基和显示助焊剂作用(还原作用)的与芳香族直接结合的1个以上羧基的化合物。作为这种助焊剂活性固化剂,可举出2,3-二羟基苯甲酸、2,4-二羟基苯甲酸、龙胆酸(2,5-二羟基苯甲酸)、2,6-二羟基苯甲酸、3,4-二羟基苯甲酸、没食子酸(3,4,5-三羟基苯甲酸)等苯甲酸衍生物;1,4-二羟基-2-萘甲酸、3,5-二羟基-2-萘甲酸、3,7-二羟基-2-萘甲酸等萘甲酸衍生物;酚酞;和双酚酸等,它们可以单独使用1种或组合2种以上。它们中,优选除去焊料表面的氧化膜的效果和与环氧树脂的反应性优异的2,3-二羟基苯甲酸、龙胆酸、酚酞。
作为具备酚羟基的(C)助焊剂活性化合物,可以举出苯酚类,具体而言,例如可以举出苯酚、邻甲酚、2,6-二甲苯酚、对甲酚、间甲酚、邻乙基苯酚、2,4-二甲苯酚、2,5-二甲苯酚、间乙基苯酚、2,3-二甲苯酚、2,4,6-三甲基苯酚、3,5-二甲苯酚、对叔丁基苯酚、儿茶酚、对叔戊基苯酚、间苯二酚、对辛基苯酚、对苯基苯酚、双酚A、双酚F、双酚AF、联苯酚、二烯丙基双酚F、二烯丙基双酚A、三苯酚、四苯酚等含有酚羟基的单体类等。
另外,优选粘合膜中助焊剂活性固化剂的配合量是1~30重量%,特别优选是3~20重量%。通过粘合膜中的助焊剂活性固化剂的配合量在上述范围,从而能提高粘合膜的助焊剂活性,而且能防止环氧树脂和未反应的助焊剂活性固化剂残留在粘合膜中。应予说明,如果未反应的助焊剂活性固化剂残留,则发生迁移。
(A)热固化性树脂和(C)助焊剂活性化合物的配合比没有特别限定,优选((A)/(C))是0.5~20,更优选1~18,进一步优选2~15。通过使((A)/(C))在上述下限值以上,从而在使粘合膜固化时能减少成为排气的(C)助焊剂化合物,所以能减少粘合膜中的空隙。另外,通过使((A)/(C))在上述上限值以下,从而能有效地除去被粘物、支撑体的端子表面和焊料表面的氧化膜。
(D)成膜性树脂
本发明的粘合膜含有(D)成膜性树脂。由此,可容易地提高粘合膜的成膜性、形成膜状态。另外,粘合膜的机械特性也优异。
作为(D)成膜性树脂,没有特别限定,例如可举出(甲基)丙烯酸系树脂、苯氧基树脂、聚酯树脂、聚氨酯树脂、聚酰亚胺树脂、硅氧烷改性聚酰亚胺树脂、聚丁二烯、聚丙烯、苯乙烯-丁二烯-苯乙烯共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物、聚缩醛树脂、聚乙烯醇缩丁醛树脂、聚乙烯醇缩乙醛树脂、丁基橡胶、氯丁二烯橡胶、聚酰胺树脂、丙烯腈-丁二烯共聚物、丙烯腈-丁二烯-丙烯酸共聚物、丙烯腈-丁二烯-苯乙烯共聚物、聚乙酸乙烯酯、尼龙等。它们可以使用1种也可以并用2种以上。其中,优选是选自(甲基)丙烯酸系树脂、苯氧基树脂和聚酰亚胺树脂中的至少1种。
(D)成膜性树脂的重均分子量没有特别限定,优选是1万以上,更优选是2万~100万,进一步优选是3万~90万。如果重均分子量在上述范围,则可以进一步提高粘合膜的成膜性。
(D)成膜性树脂的含量没有特别限定,优选相对于粘合膜为5~70重量%,更优选10~60重量%,特别优选15~55重量%。如果含量在上述范围内,则能抑制粘合膜的流动性,粘合膜的处理变得容易。
本发明的粘合膜可进一步含有上述以外的成分。
(E)固化促进剂
(E)固化促进剂可根据固化性树脂的种类等适当选择使用。作为(E)固化促进剂,例如可举出三取代磷基苯酚或其盐、熔点为150℃以上的咪唑化合物等。从在添加量少的状态下就能有效地提高粘合膜的固化性的观点出发,优选熔点为150℃以上的咪唑化合物。如果上述咪唑化合物的熔点是150℃以上,则可以在粘合膜的固化结束前将被粘物的端子和支撑体的端子接合。作为熔点为150℃以上的咪唑化合物,可举出2-苯基-4-甲基-5-羟基甲基咪唑、2-苯基-4-甲基咪唑等。
(E)固化促进剂的含量没有特别限定,优选相对于粘合膜是0.005~10重量%,更优选是0.01~5重量%。通过使咪唑化合物的配合量在上述下限值以上,从而能更有效地发挥作为(E)固化促进剂的功能,能提高粘合膜的固化性。另外,通过使咪唑的配合量在上述上限值以下,从而可以在粘合膜固化前确实地将被粘物的端子和支撑体的端子接合,另外能进一步提高粘合膜的保存性。这些(E)固化促进剂可以使用1种也可以并用2种以上。
(F)硅烷偶联剂
粘合膜可进一步含有(F)硅烷偶联剂。通过含有(F)硅烷偶联剂,从而可以提高粘合膜对半导体芯片、基板等支撑体或被粘物的密合性。作为(F)硅烷偶联剂,例如可使用环氧硅烷偶联剂、含芳香族的氨基硅烷偶联剂等。它们可以使用1种也可以并用2种以上。(F)硅烷偶联剂的配合量可以适当选择,优选相对于粘合膜为0.01~10重量%,更优选为0.05~5重量%,进一步优选为0.1~2重量%。
(G)填充材料
粘合膜可进一步含有(G)填充材料。由此,可降低粘合膜的线膨胀系数,另外可将粘合膜的最低熔融粘度调整到0.01~10000Pa·s的范围。
作为(G)填充材料,例如可举出银、氧化钛、二氧化硅、云母等,它们中优选二氧化硅。另外,作为二氧化硅填充物的形状,有破碎二氧化硅和球状二氧化硅等,但优选球状二氧化硅。
(G)填充材料的平均粒径没有特别限定,优选0.01μm~20μm,特别优选0.1μm~5μm。通过设为上述范围,从而可以抑制(G)填充材料在粘合膜内的凝集、改善外观。
(G)填充材料的含量没有特别限定,优选相对于粘合膜为0.1重量%以上,更优选为3重量%以上,进一步优选为5重量%以上,更进一步优选为8重量%以上。另一方面,优选相对于粘合膜为80重量%以下,更优选为60重量%以下,进一步优选为55重量%以下。通过使填充材料的含量在上述下限值以上,从而固化后的粘合膜和被粘合物间的线膨胀系数差变小、能减少热冲击时产生的应力,所以能进一步确实地抑制被粘合物的剥离。另外,通过使填充材料的含量在上述上限值以下,从而能抑制固化后的粘合膜的弹性模量变得过高,所以半导体装置的可靠性提高。另外,通过使填充材料的含量在上述范围,从而可容易地将粘合膜的最低熔融粘度调整到0.01~10000Pa·s。
在聚酯片等实施了剥离处理的基材上涂布将上述的各树脂成分混合到溶剂中而得到的漆料,在规定的温度干燥至实质上不含溶剂的程度,由此可得到粘合膜。在此使用的溶剂只要是对于使用的成分为惰性的物质则没有特别限定,可优选使用丙酮、甲基乙基酮、甲基异丁基酮、DIBK(二异丁基酮)、环己酮、DAA(二丙酮醇)等酮类,苯、二甲苯、甲苯等芳香烃类,甲醇、乙醇、异丙醇、正丁醇等醇类,甲基溶纤剂、乙基溶纤剂、丁基溶纤剂、甲基溶纤剂乙酸酯、乙基溶纤剂乙酸酯等溶纤剂系,NMP(N-甲基-2-吡咯烷酮)、THF(四氢呋喃)、DMF(二甲基甲酰胺)、DBE(二元酸酯)、EEP(3-乙氧基丙酸乙酯)、DMC(碳酸二甲酯)等。溶剂的使用量优选是在溶剂中混合的成分的固体成分为10~60重量%的范围。
得到的粘合膜的厚度没有特别限定,优选是1~300μm,特别优选是5~200μm。如果厚度在上述范围内,则能在接合部的间隙充分填充树脂成分,可确保树脂成分固化后的机械粘合强度。
如此得到的粘合膜具有助焊剂活性。因此,能够适合用于半导体芯片和基板、基板和基板、半导体芯片和半导体芯片、半导体晶片和半导体晶片等需要焊锡连接的部件连接。
(多层电路基板、电子部件、半导体装置)
接着,对使用了上述粘合膜的多层电路基板、电子部件和半导体装置进行说明。
图1是表示使用了本发明粘合膜的半导体装置的制造方法的一例的工序截面图。
首先,如图1所示,准备具有焊锡凸块11的半导体芯片1(图1(a))。
以覆盖该半导体芯片1的焊锡凸块11的方式层压上述具有助焊剂功能的粘合膜2(图1(b))。
作为将该具有助焊剂功能的粘合膜2层压在半导体芯片1上的方法,例如可举出辊层压机、平板加压机、晶片层压机等。它们中,为了在层压时不卷入空气,优选在真空下层压的方法(真空层压机)。
另外,作为层压的条件,没有特别限定,只要能没有空隙地层压即可,具体而言优选在60~150℃层压1~120秒,特别优选在80~120℃层压5~60秒。如果层压条件在上述范围内,则贴合性、树脂溢出的抑制效果、树脂的固化度的平衡优异。
另外,加压条件也没有特别限定,优选0.2~2.0MPa,特别优选0.5~1.5MPa。
接着,准备在与上述半导体芯片1的焊锡凸块11对应的位置具有底座部(未图示)的基板3,一边使半导体芯片1和基板3对位一边介由具有助焊剂功能的粘合膜2暂时压合(图1(c))。暂时压合的条件没有特别限定,优选在60~150℃压合1~120秒,特别优选在80~120℃压合5~60秒。另外,加压条件也没有特别限定,优选是0.2~2.0MPa,特别优选0.5~1.5MPa。
接着,形成将焊锡凸块11熔融而与底座进行焊锡接合的焊锡连接部111(图1(d))。
焊锡连接的条件取决于使用的焊料种类,例如是Sn-3.5Ag时,优选在220℃~260℃加热5秒~500秒来进行焊锡连接,特别优选在230℃~240℃加热10秒~100秒。
该焊锡接合优选在使焊锡凸块11熔融而与底座焊锡接合后、使粘合膜2热固化的条件下进行。即,焊锡接合优选在虽然使焊锡凸块11熔融但粘合膜2的固化反应不太进行的条件下来实施。由此,可以使焊锡凸块11和底座可靠地焊锡接合。
接着,加热粘合膜2使其固化。固化条件没有特别限定,但优选在130~220℃加热30~500分钟,特别优选在150~200℃加热60~180分钟。
这样,可得到用粘合膜2的固化物将半导体芯片1和基板3粘合的半导体装置10。半导体装置10由于以上述的粘合膜2的固化物粘合,所以电连接可靠性优异。另外,通过使用粘合膜2,从而可以将焊锡凸块11和底座可靠地焊锡接合,而且同时可以密封由它们产生的空隙,可得到高生产率。
另外,采用同样的方法,可以用粘合膜2的固化物将电路基板和电路基板接合而得到多层电路基板。
另外,采用同样的方法,可以用粘合膜2的固化物将半导体芯片和半导体芯片接合而得到电子部件。
以下,基于实施例和比较例详细地说明本发明,但本发明不限于此。
实施例
(实施例1)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的双酚F型环氧树脂(大日本油墨化学工业公司制、EPICLON-830LVP)55.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(三井化学公司制、VR-9305)30.8重量份、作为(C)助焊剂活性化合物的癸二酸(东京化成工业公司制)3.0重量份、作为(D)成膜性树脂的双酚F型苯氧基树脂(东都化成公司制、YP-70)10.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)0.2重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)1.0重量份溶解在甲基乙基酮中,制备树脂浓度50%的树脂漆料。
<粘合膜的制造>
将得到的树脂漆料涂布在基材聚酯膜(东丽株式会社制、Lumira)上并使得厚度为50μm,在100℃干燥5分钟,得到厚25μm的粘合膜。
<半导体装置的制造>
用真空辊层压机在100℃将得到的粘合膜层压在具有焊锡凸块(Sn-3.5Ag、熔点221℃)的半导体芯片(尺寸10mm×10mm、厚度0.3mm)上,得到带有粘合膜的半导体芯片。
接着,一边按照具有表面镀金的底座部的电路基板的底座部与焊锡凸块抵接的方式进行对位一边使用倒装片焊接机(涩谷工业株式会社制)在100℃将半导体芯片暂时压合在电路基板上30秒。
然后,使用倒装片焊接机(涩谷工业株式会社制)在235℃加热30秒,使焊锡凸块熔融进行焊锡连接。
进而,在180℃加热60分钟,使粘合膜固化,得到用粘合膜的固化物将半导体芯片和电路基板接合的半导体装置。
(实施例2)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的双酚A型环氧树脂(大日本油墨化学工业公司制、EPICLON-840S)50.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(三井化学公司制、VR-9305)25.5重量份、作为(C)助焊剂活性化合物的癸二酸(东京化成工业公司制)3.0重量份、作为(D)成膜性树脂的双酚F型苯氧基树脂(东都化成公司制、YP-70)20.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)0.5重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)1.0重量份溶解在甲基乙基酮中,制备树脂浓度50%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(实施例3)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的甲酚酚醛清漆型环氧树脂(日本化药公司制、EOCN-1020-70)20.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(住友电木公司制、PR55617)15.0重量份、作为(C)助焊剂活性化合物的癸二酸(东京化成工业公司制)3.0重量份、作为(D)成膜性树脂的双酚A型苯氧基树脂(东都化成公司制、YP-50)60.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)1.0重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)1.0重量份溶解在甲基乙基酮中,制备树脂浓度50%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(实施例4)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的甲酚酚醛清漆型环氧树脂(日本化药公司制、EOCN-1020-70)15.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(住友电木公司制、PR55617)8.0重量份、作为(C)助焊剂活性化合物的酚酞(东京化成工业公司制)6.0重量份、作为(D)成膜性树脂的双酚A型苯氧基树脂(东都化成公司制、YP-50)46.0重量份、作为(G)填充材料的球状二氧化硅填充物(Admatechs公司制、SE6050、平均粒径2μm)23.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)1.0重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)1.0重量份溶解在甲基乙基酮中,制备固体成分浓度40%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(实施例5)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的甲酚酚醛清漆型环氧树脂(日本化药公司制、EOCN-1020-70)13.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(住友电木公司制、PR55617)6.0重量份、作为(C)助焊剂活性化合物的酚酞(东京化成工业公司制)5.0重量份、作为(D)成膜性树脂的双酚A型苯氧基树脂(东都化成公司制、YP-50)39.0重量份、作为(G)填充材料的球状二氧化硅填充物(Admatechs公司制、SE6050、平均粒径2μm)36.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)0.5重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)0.5重量份溶解在甲基乙基酮中,制备固体成分浓度30%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(实施例6)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的甲酚酚醛清漆型环氧树脂(日本化药公司制、EOCN-1020-70)9.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(住友电木公司制、PR55617)4.0重量份、作为(C)助焊剂活性化合物的酚酞(东京化成工业公司制)4.0重量份、作为(D)成膜性树脂的丙烯酸酯共聚树脂(Nagasechemtex公司制、SG-P3)27.0重量份、作为(G)填充材料的球状二氧化硅填充物(Admatechs公司制、SE6050、平均粒径2μm)55.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)0.5重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)0.5重量份溶解在甲基乙基酮中,制备固体成分浓度20%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(实施例7)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的双酚F型环氧树脂(大日本油墨化学工业公司制、EPICLON-830LVP)55.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(三井化学公司制、VR-9305)31.8重量份、作为(C)助焊剂活性化合物的癸二酸(东京化成工业公司制)2.0重量份、作为(D)成膜性树脂的双酚F型苯氧基树脂(东都化成公司制、YP-70)10.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)0.2重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)1.0重量份溶解在甲基乙基酮中,制备树脂浓度50%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(实施例8)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的甲酚酚醛清漆型环氧树脂(日本化药公司制、EOCN-1020-70)15.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(三井化学公司制、VR-9305)5.0重量份、作为(C)助焊剂活性化合物的癸二酸(东京化成工业公司制)60.0重量份、作为(D)成膜性树脂的双酚A型苯氧基树脂(东都化成公司制、YP-50)18.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)1.0重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)1.0重量份溶解在甲基乙基酮中,制备树脂浓度50%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(比较例1)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的双酚F型环氧树脂(大日本油墨化学工业公司制、EPICLON-830LVP)59.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(三井化学公司制、VR-9305)34.9重量份、作为(C)助焊剂活性化合物的癸二酸(东京化成工业公司制)3.0重量份、作为(D)成膜性树脂的双酚F型苯氧基树脂(东都化成公司制、YP-70)2.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)0.1重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)1.0重量份溶解在甲基乙基酮中,制备树脂浓度50%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(比较例2)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的甲酚酚醛清漆型环氧树脂(日本化药公司制、EOCN-1020-70)20.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(住友电木公司制、PR55167)10.0重量份、作为(C)助焊剂活性化合物的酚酞(东京化成工业公司制)8.0重量份、作为(D)成膜性树脂的丙烯酸酯共聚树脂(东都化成公司制、SG-P3)60.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)1.0重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)1.0重量份、作为(G)填充材料的球状二氧化硅填充物(Admatechs公司制、SE6050、平均粒径2μm)300.0重量份溶解在甲基乙基酮中,制备树脂浓度50%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
(比较例3)
<粘合膜用漆料的制备>
将作为(A)热固化性树脂的双酚F型环氧树脂(大日本油墨化学工业公司制、EPICLON-830LVP)42.0重量份、作为(B)固化剂的苯酚酚醛清漆树脂(三井化学公司制、VR-9305)30.0重量份、作为(C)助焊剂活性化合物的癸二酸(东京化成工业公司制)3.0重量份、作为(D)成膜性树脂的丙烯酸酯共聚树脂(东都化成公司制、SG-P3)15.0重量份、作为(E)固化促进剂的2-苯基-4-甲基咪唑(四国化成工业公司制、2P4MZ)0.01重量份、作为(F)硅烷偶联剂的β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、KBM-303)10.0重量份溶解在甲基乙基酮中,制备树脂浓度50%的树脂漆料,除此以外,与实施例1同样地进行粘合膜的制造和半导体装置的制造。
另外,对于各实施例和比较例所得到的粘合膜、半导体装置进行以下的评价。将评价项目与内容一起表示。将得到的结果示于表1。
1.粘合膜的最低熔融粘度
对于各实施例和比较例所得到的粘合膜,使用粘弹性测定装置(HAKKE公司制“RheoStress RS150”)并采用平行板20mmφ、间隙0.05mm、频率0.1Hz、升温速度10℃/分钟的条件测定熔融粘度,将最低的熔融粘度作为测定值。
2.粘合膜的5%重量加热损失温度(b)-发热峰值温度(a)
对于各实施例和比较例所得的粘合膜的发热峰值温度(a),使用差示扫描量热计(Seiko Instruments株式会社制、DSC-6200)并以升温速度10℃/分钟测定固化发热量,将峰值温度(℃)作为测定值。
接着,对于各实施例和比较例所得到的粘合膜的5%重量加热损失温度(b),使用热重量/差示热同时测定装置(Seiko Instruments株式会社制、TG/DTA6200)并以升温速度10℃/分钟测定加热损失,将减少5%重量的温度(℃)作为测定值。
由得到的(a)和(b)算出(b)-(a)。
3.半导体装置的空洞和空隙
对于各实施例和比较例所得到的半导体装置各20个,利用SEM(扫描型电子显微镜)观察半导体芯片的焊锡凸块和电路基板的底座部的截面,实施空洞和空隙(气泡)的评价。各符号如下所示。
○:完全未观察到5μm以上的空洞和空隙。
×:观察到5μm以上的空洞和空隙。
4.半导体装置的导通连接性
对于各实施例和比较例所得到的半导体装置各20个,用数码万用表分别测定10点半导体芯片和电路基板间的连接电阻值,评价连接可靠性。各符号如下所示。
○:全部20个的(测定点:20×10=200)半导体装置的连接电阻值是3Ω以下。
△:没有不导通的点,但10~20点的连接电阻值是3Ω以上(实际使用上没问题)。
×:20点以上的连接电阻值是3Ω以上、或有1点以上开路不良(实际使用上有问题)。
5.半导体装置的绝缘可靠性
对于各实施例和比较例所得到的半导体装置各20个,一边在130℃、85%RH的环境下施加3V的电压一边分别连续测定(200hr)3点相邻凸块间的绝缘电阻值,评价离子迁移。各符号如下所示。
○:在所有的测定点(20×3=60)都没有发生绝缘破坏。
△:发生绝缘破坏的点小于3点。
×:发生绝缘破坏的点是3点以上。
[表1]
表中的各成分如下所述。
(A-1)双酚F型环氧树脂(DIC公司制、型号:EPICLON-830LVP)
(A-2)双酚A型环氧树脂(DIC公司制、型号:EPICLON-840S)
(A-3)甲酚酚醛清漆型环氧树脂(日本化药公司制、型号:EOCN-1020-70)
(B-1)苯酚酚醛清漆树脂(三井化学公司制、型号:VR-9305)
(B-2)苯酚酚醛清漆树脂(住友电木公司制、型号:PR55617)
(C-1)癸二酸(东京化成工业公司制)
(C-2)酚酞(东京化成工业公司制)
(D-1)双酚F型苯氧基树脂(东都化成公司制、型号:YP-70)
(D-2)双酚A型苯氧基树脂(东都化成公司制、型号:YP-50)
(D-3)丙烯酸酯共聚树脂(Nagasechemtex公司制、型号:SG-P3)
(E-1)2-苯基-4-甲基咪唑(四国化成工业公司制、型号:2P4MZ)
(F-1)β-(3,4环氧环己基)乙基三甲氧基硅烷(信越化学工业公司制、型号:KBM-303)
(G-1)球状二氧化硅填充物(Admatechs公司制、型号:SE6050、平均粒径2μm)
实施例1中得到的粘合膜的最低熔融粘度是0.02Pa·s,另外5%重量加热损失温度(b)和发热峰值温度(a)的差是168℃。用实施例1中得到的粘合膜制造半导体装置并进行评价,结果如表1所示,空洞和空隙、导通连接性、绝缘可靠性均良好。
另外,各实施例2~8中得到的粘合膜和半导体装置也表现出与实施例1几乎同样的行为。
本申请基于在2009年9月16日申请的日本申请特愿2009-214528要求优先权,并将其全部内容援引于此。
Claims (14)
1.一种粘合膜,其特征在于,是将支撑体的第一端子和被粘物的第二端子使用焊料进行电连接、将该支撑体和该被粘物粘合的粘合膜,其含有(A)热固化性树脂、(B)固化剂、(C)助焊剂活性化合物和(D)成膜性树脂,
该粘合膜的最低熔融粘度是0.01~10000Pa·s,并且,将该粘合膜的发热峰值温度定义为(a)、将该粘合膜的5%重量加热损失温度定义为(b)时,满足下述式(1),温度单位是℃,
(b)-(a)≥100℃(1)。
2.如权利要求1所述的粘合膜,其中,(A)热固化性树脂和(C)助焊剂活性化合物的配合比(A)/(C)是0.5~20。
3.如权利要求1或2所述的粘合膜,其中,相对于所述粘合膜,(A)热固化性树脂的含量为5~80重量%。
4.如权利要求1~3中任一项所述的粘合膜,其中,(A)热固化性树脂是环氧树脂。
5.如权利要求1~4中任一项所述的粘合膜,其中,(C)助焊剂活性化合物是具有羧基和/或酚羟基的助焊剂活性化合物。
6.如权利要求1~4中任一项所述的粘合膜,其中,(C)助焊剂活性化合物是1分子中具有2个酚羟基和至少1个与芳香族直接结合的羧基的助焊剂活性化合物。
7.如权利要求1~6中任一项所述的粘合膜,其中,(C)助焊剂活性化合物含有下述通式(2)表示的化合物,
HOOC-(CH2)n-COOH(2)
通式(2)中,n是1~20的整数。
9.如权利要求1~8中任一项所述的粘合膜,其中,所述粘合膜还含有(G)填充材料。
10.如权利要求9所述的粘合膜,其中,相对于所述粘合膜,(G)填充材料的含量是0.1重量%~80重量%。
11.如权利要求1~10中任一项所述的粘合膜,其中,所述粘合膜还含有相对于所述粘合膜为0.01重量%~5重量%的(F)硅烷偶联剂。
12.一种多层电路基板,其特征在于,具有权利要求1~11中任一项所述的粘合膜的固化物。
13.一种电子部件,其特征在于,具有权利要求1~11中任一项所述的粘合膜的固化物。
14.一种半导体装置,其特征在于,具有权利要求1~11中任一项所述的粘合膜的固化物。
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Cited By (3)
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WO2018083885A1 (ja) * | 2016-11-02 | 2018-05-11 | 住友ベークライト株式会社 | エポキシ樹脂組成物および構造体 |
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EP3762171B1 (de) * | 2018-03-05 | 2023-06-21 | Heraeus Deutschland GmbH & Co. KG | Verfahren zur herstellung einer sandwichanordnung |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004075788A (ja) * | 2002-08-13 | 2004-03-11 | Nitto Denko Corp | アンダーフィル用接着フィルム及び半導体装置 |
CN1639852A (zh) * | 2002-03-01 | 2005-07-13 | 国家淀粉及化学投资控股公司 | B-阶底填密封剂及其应用方法 |
JP2005307169A (ja) * | 2004-03-22 | 2005-11-04 | Hitachi Chem Co Ltd | フィルム状接着剤およびこれを用いた半導体装置の製造方法 |
CN101065444A (zh) * | 2004-08-05 | 2007-10-31 | 福莱金属公司 | 用于电子器件的低成洞性非流动助熔底部填充剂 |
JP2008144161A (ja) * | 2006-11-14 | 2008-06-26 | Hitachi Chem Co Ltd | 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置 |
CN101529590A (zh) * | 2006-10-31 | 2009-09-09 | 住友电木株式会社 | 半导体电子部件及使用该部件的半导体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61276873A (ja) | 1985-05-31 | 1986-12-06 | Sony Chem Kk | 導電異方性接着剤 |
US5128746A (en) * | 1990-09-27 | 1992-07-07 | Motorola, Inc. | Adhesive and encapsulant material with fluxing properties |
JP2905121B2 (ja) | 1995-07-19 | 1999-06-14 | ソニーケミカル株式会社 | 異方性導電接着フィルム |
US6180696B1 (en) * | 1997-02-19 | 2001-01-30 | Georgia Tech Research Corporation | No-flow underfill of epoxy resin, anhydride, fluxing agent and surfactant |
TW574739B (en) * | 2001-02-14 | 2004-02-01 | Nitto Denko Corp | Thermosetting resin composition and semiconductor device using the same |
US7331502B2 (en) * | 2001-03-19 | 2008-02-19 | Sumitomo Bakelite Company, Ltd. | Method of manufacturing electronic part and electronic part obtained by the method |
JP4083601B2 (ja) * | 2003-03-10 | 2008-04-30 | 住友ベークライト株式会社 | 接着フィルムおよびこれを用いた半導体パッケージならびに半導体装置 |
US7247683B2 (en) * | 2004-08-05 | 2007-07-24 | Fry's Metals, Inc. | Low voiding no flow fluxing underfill for electronic devices |
TWI416671B (zh) * | 2005-05-31 | 2013-11-21 | Sumitomo Bakelite Co | A pre-coated encapsulated resin composition, a semiconductor device using the same, and a method for manufacturing the same |
JPWO2008023452A1 (ja) * | 2006-08-25 | 2010-01-07 | 住友ベークライト株式会社 | 接着テープ、接合体および半導体パッケージ |
JP5394066B2 (ja) * | 2006-10-03 | 2014-01-22 | 住友ベークライト株式会社 | 接着テープ |
TWI414580B (zh) * | 2006-10-31 | 2013-11-11 | Sumitomo Bakelite Co | 黏著帶及使用該黏著帶而成之半導體裝置 |
JP5133598B2 (ja) * | 2007-05-17 | 2013-01-30 | 日東電工株式会社 | 封止用熱硬化型接着シート |
CN102204420B (zh) * | 2008-11-06 | 2013-11-13 | 住友电木株式会社 | 制造电子器件的方法及电子器件 |
-
2010
- 2010-09-09 SG SG2012015541A patent/SG179001A1/en unknown
- 2010-09-09 JP JP2011502968A patent/JPWO2011033743A1/ja active Pending
- 2010-09-09 KR KR20127009371A patent/KR20120064701A/ko not_active Application Discontinuation
- 2010-09-09 US US13/393,305 patent/US20120156502A1/en not_active Abandoned
- 2010-09-09 WO PCT/JP2010/005510 patent/WO2011033743A1/ja active Application Filing
- 2010-09-09 CA CA 2774308 patent/CA2774308A1/en not_active Abandoned
- 2010-09-09 EP EP10816858A patent/EP2479228A1/en not_active Withdrawn
- 2010-09-09 CN CN2010800409600A patent/CN102549091A/zh active Pending
- 2010-09-15 TW TW99131168A patent/TW201130934A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1639852A (zh) * | 2002-03-01 | 2005-07-13 | 国家淀粉及化学投资控股公司 | B-阶底填密封剂及其应用方法 |
JP2004075788A (ja) * | 2002-08-13 | 2004-03-11 | Nitto Denko Corp | アンダーフィル用接着フィルム及び半導体装置 |
JP2005307169A (ja) * | 2004-03-22 | 2005-11-04 | Hitachi Chem Co Ltd | フィルム状接着剤およびこれを用いた半導体装置の製造方法 |
CN101065444A (zh) * | 2004-08-05 | 2007-10-31 | 福莱金属公司 | 用于电子器件的低成洞性非流动助熔底部填充剂 |
CN101529590A (zh) * | 2006-10-31 | 2009-09-09 | 住友电木株式会社 | 半导体电子部件及使用该部件的半导体装置 |
JP2008144161A (ja) * | 2006-11-14 | 2008-06-26 | Hitachi Chem Co Ltd | 接着剤組成物、フィルム状接着剤、接着シート及び半導体装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105518842A (zh) * | 2013-09-11 | 2016-04-20 | 迪睿合株式会社 | 底部填充材料和使用其的半导体装置的制造方法 |
CN105518842B (zh) * | 2013-09-11 | 2019-10-22 | 迪睿合株式会社 | 底部填充材料和使用其的半导体装置的制造方法 |
CN110828317A (zh) * | 2018-08-10 | 2020-02-21 | 欣兴电子股份有限公司 | 封装基板结构与其接合方法 |
CN110828317B (zh) * | 2018-08-10 | 2021-08-10 | 欣兴电子股份有限公司 | 封装基板结构与其接合方法 |
CN112771665A (zh) * | 2020-04-16 | 2021-05-07 | 华为技术有限公司 | 封装结构、电动车辆和电子装置 |
CN112771665B (zh) * | 2020-04-16 | 2024-05-24 | 华为数字能源技术有限公司 | 封装结构、电动车辆和电子装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2479228A1 (en) | 2012-07-25 |
CA2774308A1 (en) | 2011-03-24 |
WO2011033743A1 (ja) | 2011-03-24 |
JPWO2011033743A1 (ja) | 2013-02-07 |
US20120156502A1 (en) | 2012-06-21 |
SG179001A1 (en) | 2012-04-27 |
KR20120064701A (ko) | 2012-06-19 |
TW201130934A (en) | 2011-09-16 |
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