CN105518842B - 底部填充材料和使用其的半导体装置的制造方法 - Google Patents

底部填充材料和使用其的半导体装置的制造方法 Download PDF

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CN105518842B
CN105518842B CN201480050168.1A CN201480050168A CN105518842B CN 105518842 B CN105518842 B CN 105518842B CN 201480050168 A CN201480050168 A CN 201480050168A CN 105518842 B CN105518842 B CN 105518842B
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melt viscosity
underfill
chip
lowest melt
epoxy resin
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CN105518842A (zh
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斋藤崇之
小山太一
森山浩伸
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Dozai Co Ltd
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Dozai Co Ltd
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C—CHEMISTRY; METALLURGY
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    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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    • C09J133/04—Homopolymers or copolymers of esters
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Abstract

提供能够实现宽阔安装边缘的底部填充材料、以及使用其的半导体装置的制造方法。使用如下的底部填充材料（20），其含有环氧树脂、酸酐、丙烯酸系树脂以及有机过氧化物，以5℃/min以上且50℃/min以下的升温速度条件测定熔融粘度时的最低熔融粘度达到温度为100℃以上且150℃以下，最低熔融粘度为100Pa·s以上且5000Pa·s以下。由于在不同的升温温度条件下测定时的最低熔融粘度达到温度的变化小，因此即使不严密地控制热压接时的温度曲线，也能够实现无空隙安装和良好的焊料接合性，能够实现宽阔的安装边缘。

Description

底部填充材料和使用其的半导体装置的制造方法
技术领域
本发明涉及用于安装半导体芯片的底部填充材料、以及使用其的半导体装置的制造方法。本申请基于2013年9月11日在日本申请的日本专利申请号特愿2013-188683要求优先权，通过参照该申请而援引至本申请。
背景技术
近年来，在半导体芯片的安装方法中，为了缩短工序而研究了在半导体IC（Integrated Circuit）电极上粘贴底部填充膜的“预供给型底部填充膜（PUF：Pre-appliedUnderfill Film）”的使用。
使用该预供给型底部填充膜的安装方法例如如下那样地进行（例如参照专利文献1）。
工序A：在晶片上粘贴底部填充膜，进行切割而得到半导体芯片。
工序B：在贴合有底部填充膜的状态下，对准并搭载半导体芯片。
工序C：将半导体芯片进行热压接，利用焊料凸点的金属接合来确保导通、以及利用底部填充膜的固化来进行粘接。
随着温度的上升，底部填充材料在至反应开始为止粘度降低（液状化），以反应开始点为分界，粘度上升而成为固化物。通过这样的粘度变化，容易去除空隙，但变更压力的时刻不恰当时，容易残留空隙。为了在恰当的时刻施加压力，通常利用安装的曲线来进行调整。由施加压力的时刻和底部填充材料的粘度来确定最佳条件，因此需要通过实际上使用芯片的安装等来发现最佳的安装条件。
为了研究这些，通常使用流变仪的数据。例如在图10所示的熔融粘度曲线中，NCF1适合于低温短时间的安装，NCF3适合于高温长时间的安装。然而，流变仪的升温速度与安装的升温速度有很大的不同，因此仅利用流变仪数据判断是否适合于无空隙安装是困难的。
无空隙安装中，受到实际安装品的形状/导热等的影响，因此实现无空隙的底部填充材料容易各不相同。另外，底部填充材料仅能够利用通常确定的安装曲线来进行良好的安装，安装边缘（）狭窄。
现有技术文献
专利文献
专利文献1：日本特开2005-28734号公报。
发明内容
发明要解决的课题
本发明是鉴于这种现有情况而提出的，提供能够实现宽阔安装边缘的底部填充材料、以及使用其的半导体装置的制造方法。
用于解决问题的手段
为了解决前述课题，本发明的特征在于，其为将半导体芯片搭载于电子部件之前预先贴合于半导体芯片的底部填充材料，所述半导体芯片形成有带焊料电极，所述电子部件形成有与带焊料电极相对的对向电极，所述底部填充材料含有环氧树脂、酸酐、丙烯酸系树脂以及有机过氧化物，以5℃/min以上且50℃/min以下的升温速度条件测定熔融粘度时的最低熔融粘度达到温度为100℃以上且150℃以下，最低熔融粘度为100Pa·s以上且5000Pa·s以下。
另外，本发明所述的半导体装置的制造方法的特征在于，其具备如下工序：将半导体芯片搭载于电子部件的搭载工序，所述半导体芯片形成有带焊料电极，该电极面贴合有底部填充材料，所述电子部件形成有与前述带焊料电极相对的对向电极；以及，将前述半导体芯片与前述电子部件进行热压接的热压接工序，前述底部填充材料含有环氧树脂、酸酐、丙烯酸系树脂以及有机过氧化物，以5℃/min以上且50℃/min以下的升温速度条件测定熔融粘度时的最低熔融粘度达到温度为100℃以上且150℃以下，最低熔融粘度为100Pa·s以上且5000Pa·s以下。
发明效果
根据本发明，由于在不同的升温温度条件下测定时的最低熔融粘度达到温度的变化小，因此即使不严密地控制热压接时的温度曲线，也能够实现无空隙安装和良好的焊料接合性，能够实现宽阔的安装边缘。
附图说明
图1是示意性地示出搭载前的半导体芯片和电路基板的剖面图。
图2是示意性地示出搭载时的半导体芯片和电路基板的剖面图。
图3是示意性地示出热压接后的半导体芯片和电路基板的剖面图。
图4是表示各升温温度条件下的熔融粘度曲线的图。
图5是表示本实施方式中的半导体装置的制造方法的流程图。
图6是示意性地示出在晶片上粘贴底部填充膜的工序的立体图。
图7是示意性地示出切割晶片的工序的立体图。
图8是示意性地示出拾取半导体芯片的工序的立体图。
图9是表示安装时的温度曲线的图。
图10是表示熔融粘度曲线的一例的图。
具体实施方式
以下，针对本发明的实施方式，按照下述顺序进行详细说明。
1.底部填充材料
2.半导体装置的制造方法
3.实施例。
<1. 底部填充材料>
本实施方式所述的底部填充材料是将半导体芯片搭载于电子部件之前预先贴合于半导体芯片的，所述半导体芯片形成有带焊料电极，所述电子部件形成有与带焊料电极相对的对向电极。
图1是示意性地示出搭载前的半导体芯片和电路基板的剖面图，图2是示意性地示出搭载时的半导体芯片和电路基板的剖面图，且图3是示意性地示出热压接后的半导体芯片和电路基板的剖面图。
如图1~图3所示那样，本实施方式中的底部填充材料20是在形成有带焊料电极的半导体芯片10的电极面上预先贴合并使用的，利用底部填充材料20固化而成的粘接层21将半导体芯片10与电路基板30进行接合，所述电路基板30形成有与带焊料电极相对的对向电极。
半导体芯片10在硅等半导体11表面形成有集成电路，其具有被称为凸点的用于连接的带焊料电极。带焊料电极在由铜等形成的电极12上接合有焊料13，具有将电极12的厚度与焊料13的厚度合计而得到的厚度。
作为焊料，可以使用Sn-37Pb共晶焊料（熔点为183℃）、Sn-Bi焊料（熔点为139℃）、Sn-3.5Ag（熔点为221℃）、Sn-3.0Ag-0.5Cu（熔点为217℃）、Sn-5.0Sb（熔点为240℃）等。
电路基板30在例如刚性基板、柔性基板等基材31上形成有电路。另外，在要搭载半导体芯片10的安装部，在与半导体芯片10的带焊料电极相对的位置形成了具有规定厚度的对向电极32。
底部填充材料20含有成膜树脂、环氧树脂、酸酐、丙烯酸系树脂以及有机过氧化物。
成膜树脂相当于平均分子量为10000以上的高分子量树脂，从成膜性的观点出发，优选为10000~100000左右的平均分子量。作为成膜树脂，可以使用苯氧基树脂、环氧树脂、改性环氧树脂、聚氨酯树脂、丙烯酸类橡胶等各种树脂。这些成膜树脂可以单独使用1种，也可以组合2种以上使用。这些之中，本实施方式中，从成膜状态、连接可靠性等的观点出发，适合使用苯氧基树脂。
作为环氧树脂，可列举出例如双环戊二烯型环氧树脂、缩水甘油醚型环氧树脂、缩水甘油胺型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、螺环型环氧树脂、萘型环氧树脂、联苯型环氧树脂、萜型环氧树脂、四溴双酚A型环氧树脂、甲酚酚醛清漆型环氧树脂、苯酚酚醛清漆型环氧树脂、α-萘酚酚醛清漆型环氧树脂、溴化苯酚酚醛清漆型环氧树脂等。这些环氧树脂可以单独使用1种，也可以组合2种以上使用。这些之中，本实施方式中，从高粘接性、耐热性的观点出发，优选使用双环戊二烯型环氧树脂。
酸酐具有去除焊料表面的氧化膜的焊剂功能，因此能够获得优异的连接可靠性。作为酸酐，可列举出例如四丙烯基琥珀酸酐、十二碳烯基琥珀酸酐等脂肪族酸酐；六氢邻苯二甲酸酐、甲基四氢邻苯二甲酸酐等脂环式酸酐；邻苯二甲酸酐、偏苯三酸酐、均苯四酸酐等芳香族酸酐等。这些环氧固化剂可以单独使用1种，也可以组合2种以上使用。这些环氧固化剂之中，这些之中，从焊料连接性的观点出发，优选使用脂肪族酸酐。
另外，优选添加固化促进剂。作为固化促进剂的具体例，可列举出2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑等咪唑类；1,8-二氮杂双环（5,4,0）十一碳烯-7盐（DBU盐）、2-（二甲氨基甲基）苯酚等叔胺类；三苯基膦等膦类；辛酸锡等金属化合物等。
作为丙烯酸系树脂，可以使用单官能（甲基）丙烯酸酯、2官能以上的（甲基）丙烯酸酯。作为单官能（甲基）丙烯酸酯，可列举出（甲基）丙烯酸甲酯、（甲基）丙烯酸乙酯、（甲基）丙烯酸正丙酯、（甲基）丙烯酸异丙酯、（甲基）丙烯酸正丁酯等。作为2官能以上的（甲基）丙烯酸酯，可列举出双酚F-EO改性二（甲基）丙烯酸酯、双酚A-EO改性二（甲基）丙烯酸酯、三羟甲基丙烷PO改性（甲基）丙烯酸酯、多官能聚氨酯（甲基）丙烯酸酯等。这些丙烯酸系树脂可以单独使用，也可以组合2种以上使用。这些之中，本实施方式中适合使用2官能（甲基）丙烯酸酯。
作为有机过氧化物，可列举出例如过氧化酯、过氧化缩酮、过氧化氢、过氧化二烷基、过氧化二酰基、过氧化二碳酸酯等。这些有机过氧化物可以单独使用，也可以组合2种以上使用。这些之中，本实施方式中适合使用过氧化酯。
另外，作为其它的添加组合物，优选含有无机填料。通过含有无机填料，能够调整压接时的树脂层的流动性。作为无机填料，可以使用二氧化硅、滑石、氧化钛、碳酸钙、氧化镁等。
进而，根据需要可以添加环氧系、氨基系、巯基·硫化物系、酰脲系等的硅烷偶联剂。
像这样，通过并用固化反应较慢的环氧系和固化反应较快的丙烯酸系，能够减小以不同的升温温度条件测定时的最低熔融粘度达到温度的变化，能够实现宽阔的安装边缘。
具体而言，如图4所示那样，以5℃/min以上且50℃/min以下的升温速度条件测定熔融粘度时的最低熔融粘度达到温度为100℃以上且150℃以下，最低熔融粘度为100Pa·s以上且5000Pa·s以下。由此，即使不严密地控制热压接时的温度曲线，也能够实现无空隙安装和良好的焊料接合性。
另外，最低熔融粘度优选为1000Pa·s以上且2000Pa·s以下。由此，能够抑制热压接时产生空隙。
另外，丙烯酸系树脂和有机过氧化物的总质量与环氧树脂和酸酐的总质量之比优选为7:3~4:6。由此，能够获得会实现无空隙安装和良好焊料接合性的底部填充材料。
接着，针对前述底部填充材料形成为膜状的预供给型底部填充膜的制造方法进行说明。首先，使含有成膜树脂、环氧树脂、酸酐、丙烯酸系树脂以及有机过氧化物的粘接剂组合物溶解于溶剂。作为溶剂，可以使用甲苯、醋酸乙酯等、或者它们的混合溶剂。制备树脂组合物后，使用棒涂机、涂布装置等，涂布在剥离基材上。
剥离基材包括将例如硅氧烷等剥离剂涂布于PET（Poly EthyleneTerephthalate）、OPP（Oriented Polypropylene）、PMP（Poly-4-methylpentene-1）、PTFE（Polytetrafluoroethylene）等而成的层叠结构，在防止组合物干燥的同时，维持组合物的形状。
接着，利用热烘箱、加热干燥装置等使涂布在剥离基材上的树脂组合物进行干燥。由此，能够获得规定厚度的预供给型底部填充膜。
<2. 半导体装置的制造方法>
接着，针对使用前述预供给型底部填充膜的半导体装置的制造方法进行说明。
图5是表示本实施方式中的半导体装置的制造方法的流程图。如图5所示那样，本实施方式中的半导体装置的制造方法具备：底部填充膜粘贴工序S1、切割工序S2、半导体芯片搭载工序S3、以及热压接工序S4。
图6是示意性地示出在晶片上粘贴底部填充膜的工序的立体图。如图6所示那样，在底部填充膜粘贴工序S1中，利用具备与晶片1的直径相比具有更大直径的环状或框状架子的卡具3来固定晶片1，在晶片1上粘贴底部填充膜2。底部填充膜2作为在切割晶片1时保护·固定晶片1、并在拾取时保持晶片1的切割带而发挥功能。需要说明的是，在晶片1上制作多个IC（Integrated Circuit），晶片1的粘接面如图1所示在被切割线（scribe line）分隔的每个半导体芯片10上设置有带焊料电极。
图7是示意性地示出切割晶片的工序的立体图。如图7所示那样，切割工序S2中，沿着切割线按压刀片4来切削晶片1，从而分隔成各个半导体芯片。
图8是示意性地示出拾取半导体芯片的工序的立体图。如图8所示那样，各个带底部填充膜的半导体芯片10被保持于底部填充膜并被拾取。
半导体芯片搭载工序S3中，如图2所示那样，带底部填充膜的半导体芯片10与电路基板30隔着底部填充膜进行配置。另外，将带底部填充膜的半导体芯片10以带焊料电极与对向电极32相对的方式对准并配置。并且，通过加热接合器（），使底部填充膜产生流动性，但在不产生主固化的程度的规定温度、压力、时间的条件下进行加热按压来搭载。
搭载时的温度条件优选为30℃以上且155℃以下。另外，压力条件优选为50N以下、更优选为40N以下。另外，时间条件优选为0.1秒以上且10秒以下、更优选为0.1秒以上且1.0秒以下。由此，可制成带焊料电极不熔融地与电路基板30侧的电极接触的状态，可以制成底部填充膜未完全固化的状态。另外，由于以低温进行固定，因此能够抑制空隙的发生、降低对半导体芯片10的损害。
在接下来的热压接工序S4中，例如，在以规定的升温速度从第一温度升温至第二温度的接合条件下，使带焊料电极的焊料熔融来形成金属接合，同时使底部填充膜完全固化。
另外，接合器头（）在达到搭载后的底部填充膜的熔融开始温度为止，因树脂的弹性模量而被保持在一定的高度后，因与升温相伴的树脂熔融而一气下降，达到头的最低点。该最低点通过头的下降速度与树脂的固化速度的关系来确定。树脂进一步固化后，通过树脂与头的热膨胀而缓慢上升。
第一温度优选与底部填充材料的最低熔融粘度达到温度大致相同，优选为50℃以上且150℃以下。由此，能够使底部填充材料的固化行为符合接合条件，能够抑制空隙的发生。另外，升温速度优选为50℃/sec以上且150℃/sec以下。另外，第二温度还因焊料的种类而异，优选为200℃以上且280℃以下、更优选为220℃以上且260℃以下。由此，能够使带焊料电极与基板电极进行金属接合，并且使底部填充膜完全固化，使半导体芯片10的电极与电路基板30的电极进行电连接、机械连接。
像这样，本实施方式中的半导体装置的制造方法通过将底部填充材料20预先贴合于形成有带焊料电极的半导体芯片10，即使不严密地控制热压接时的温度曲线，也能够实现无空隙安装和良好的焊料接合性，所述底部填充材料20含有环氧树脂、酸酐、丙烯酸系树脂以及有机过氧化物，含有环氧树脂、酸酐、丙烯酸系树脂以及有机过氧化物，以5℃/min以上且50℃/min以下的升温速度条件测定熔融粘度时的最低熔融粘度达到温度为100℃以上且150℃以下，最低熔融粘度为100Pa·s以上且5000Pa·s以下。
需要说明的是，在前述实施方式中，底部填充膜作为切割带而发挥功能，但不限定于此，也可以另行使用切割带，在切割后使用底部填充膜进行倒装片安装。
[其它实施方式]
另外，本技术还可以应用于通过向设置于半导体芯片的小孔中填充金属而将层叠成三明治状的多个芯片基板进行电连接的TSV（Through Silicon Via）技术。
即，还可以应用于将具有第一面和第二面的多个芯片基板进行层叠的半导体装置的制造方法，所述第一面形成有带焊料电极，所述第二面在第一面的相反侧形成有与带焊料电极相对的对向电极。
此时，在第一芯片基板的第一面侧粘贴有底部填充膜的状态下，搭载于第二芯片基板的第二面。其后，通过将第一芯片基板的第一面与第二芯片基板的第二面以带焊料电极的焊料熔点以上的温度进行热压接，能够获得将多个芯片基板层叠而成的半导体装置。
实施例
<3. 实施例>
以下，针对本发明的实施例进行说明。本实施例中，制作预供给型的底部填充膜，在5℃/min以上且50℃/min以下的升温速度条件下测定熔融粘度。并且，使用底部填充膜将具有带焊料电极的IC芯片与具有和其相对的电极的IC基板进行连接来制作安装体，评价空隙和焊料接合。需要说明的是，本发明不限定于这些实施例。
熔融粘度的测定、安装体的制作、空隙的评价和焊料接合的评价如下那样地进行。
[熔融粘度的测定]
针对各底部填充膜，使用流变仪（TA公司制造的ARES），在5℃/min、1Hz的条件A、10℃/min、1Hz的条件B、20℃/min、1Hz的条件C、30℃/min、1Hz的条件D、40℃/min、1Hz的条件E和50℃/min、1Hz的条件F下，测定样品的最低熔融粘度和最低熔融粘度达到温度。
[安装体的制作]
利用加压机在50℃-0.5MPa的条件下将底部填充膜贴合在晶片上，进行切割而得到具有带焊料电极的IC芯片。
IC芯片的尺寸为6mm□、厚度为200μm，其具有在由厚度20μm的Cu形成的电极的前端形成有厚度为16μm的焊料（Sn-3.5Ag、熔点221℃）的外围配置（）的凸点（75μm间距、384销）。
另外，同样地，与其相对的IC基板的尺寸为8mm□、厚度为100μm，其具有在由厚度20μm的Cu形成的电极上施加有Ni/Au镀层的外围配置的凸点（75μm间距、384销）。
接着，使用倒装片接合器，在60℃-0.5秒-30N的条件下，在IC基板上搭载IC芯片。
其后，使用倒装片接合器，以图9所示的温度曲线1~3进行热压接。温度曲线1是以150℃/sec的升温速度从60℃至150℃压接后，以150℃/sec的升温速度从150℃至250℃压接的两阶段压接（20N的恒定载重）。温度曲线2是以150℃/sec的升温速度从60℃至250℃压接的一阶段压接（20N的恒定载重）。温度曲线3是以50℃/sec的升温速度从60℃至250℃压接的一阶段压接（20N的恒定载重）。
热压接后，进一步以150℃-2小时的条件进行固化，得到安装体。需要说明的是，使用倒装片接合器时的温度通过热电偶来测定样品的实际温度。
[空隙的评价]
使用SAT（Scanning Acoustic Tomograph，超声波显像装置）观察以温度曲线1~3进行热压接的安装体。空隙为IC芯片面积的5%以下时评价为“○”、空隙超过IC芯片面积的5%时评价为“×”。一般来说，产生空隙时，对长期可靠性带来不良影响的可能性变高。
[焊料接合的评价]
测定以温度曲线1~3进行热压接的安装体的导通电阻。导通电阻为65Ω以上且70Ω以下时评价为“○”，除此之外评价为“×”。
[综合评价]
空隙的评价和焊料接合的评价这两者均为“○”时评价为“○”，除此之外评价为“×”。
<实施例>
如表1所示那样，配混13.7质量份苯氧基树脂（品名：PKHH、ユニオンカーバイド社制）、15.1质量份环氧树脂（品名：HP7200H、大日本インキ化学社制）、8.9质量份酸酐（品名：MH-700、新日本理化社制)、0.1质量份咪唑（品名：2MZ-A、四国化成工业社制）、11.6质量份丙烯酸系树脂（品名：DCP、新中村化学社制）、0.6质量份引发剂（品名：パーブチルZ、日本油脂社制）、44.5质量份填料A（品名：SO-E5、アドマテックス社制）、以及5.5质量份填料B（品名：アエロジルRY200、日本アエロジル社制），从而制备底部填充膜的树脂组合物。使用棒涂机将其涂布于经剥离处理的PET（Polyethylene terephthalate），用80℃的烘箱使其干燥3分钟，从而制作厚度为50μm的底部填充膜（表层剥离PET（25μm）/底部填充膜（50μm）/基底剥离PET（50μm））。
表2示出以各升温速度测定的最低熔融粘度和最低熔融粘度达到温度。以5℃/min测定的最低熔融粘度为1300Pa·s，最低熔融粘度达到温度为100℃。以10℃/min测定的最低熔融粘度为1330Pa·s，最低熔融粘度达到温度为105℃。以20℃/min测定的最低熔融粘度为1360Pa·s，最低熔融粘度达到温度为110℃。以30℃/min测定的最低熔融粘度为1400Pa·s，最低熔融粘度达到温度为114℃。以40℃/min测定的最低熔融粘度为1440Pa·s，最低熔融粘度达到温度为123℃。以50℃/min测定的最低熔融粘度为1480Pa·s，最低熔融粘度达到温度为130℃。
另外，表3表示通过温度曲线1~3得到的安装体的空隙的评价和焊料接合的评价。通过温度曲线1而得到的安装体的空隙相对于IC芯片面积的比例为0%、导通电阻为68.5Ω，综合评价为○。通过温度曲线2而得到的安装体的空隙相对于IC芯片面积的比例为0%、导通电阻为68.2Ω，综合评价为○。通过温度曲线3而得到的安装体的空隙相对于IC芯片面积的比例为0%、导通电阻为68.1Ω，综合评价为○。
<比较例>
如表1所示那样，配混13.7质量份苯氧基树脂（品名：PKHH、ユニオンカーバイド社制）、20.6质量份环氧树脂（品名：HP7200H、大日本インキ化学社制）、12.1质量份酸酐（品名：MH-700、新日本理化社制)、0.1质量份咪唑（品名：2MZ-A、四国化成工业社制）、3.3质量份丙烯酸系树脂（品名：DCP、新中村化学社制）、0.2质量份引发剂（品名：パーブチルZ、日本油脂社制）、44.5质量份填料A（品名：SO-E5、アドマテックス公司制）、以及5.5质量份填料B（品名：アエロジルRY200、日本アエロジル公司制），从而制备底部填充膜的树脂组合物。使用棒涂机将其涂布于经剥离处理的PET（Polyethylene terephthalate），用80℃的烘箱使其干燥3分钟，从而制作厚度为50μm的底部填充膜（表层剥离PET（25μm）/底部填充膜（50μm）/基底剥离PET（50μm））。
表2示出以各升温速度测定的最低熔融粘度和最低熔融粘度达到温度。以5℃/min测定的最低熔融粘度为1300Pa·s，最低熔融粘度达到温度为80℃。以10℃/min测定的最低熔融粘度为1350Pa·s，最低熔融粘度达到温度为100℃。以20℃/min测定的最低熔融粘度为1400Pa·s，最低熔融粘度达到温度为120℃。以30℃/min测定的最低熔融粘度为1450Pa·s，最低熔融粘度达到温度为140℃。以40℃/min测定的最低熔融粘度为1500Pa·s，最低熔融粘度达到温度为160℃。以50℃/min测定的最低熔融粘度为1550Pa·s，最低熔融粘度达到温度为180℃。
另外，表3表示通过温度曲线1~3而得到的安装体的空隙的评价和焊料接合的评价。通过温度曲线1而得到的安装体的空隙相对于IC芯片面积的比例为0%、导通电阻为断开，综合评价为×。通过温度曲线2而得到的安装体的空隙相对于IC芯片面积的比例为30%、导通电阻为67.5Ω，综合评价为×。通过温度曲线3而得到的安装体的空隙相对于IC芯片面积的比例为10%、导通电阻为69.2Ω，综合评价为×。
[表1]
[表2]
[表3]
比较例中，以5℃/min测定时的最低熔融粘度达到温度低、以40℃/min和50℃/min测定时的最低熔融粘度达到温度高，相对于升温速度的变化，最低熔融粘度达到温度的变化大，因此无法应对不同温度曲线的安装。另一方面，实施例中，相对于升温速度的变化，最低熔融粘度达到温度的变化小，因此即使不严密地控制热压接时的温度曲线，也能够实现无空隙安装和良好的焊料接合性，能够实现宽阔的安装边缘。
附图标记说明
1 晶片、2 底部填充膜、3 卡具、4 刀片、10 半导体芯片、11 半导体、12 电极、13焊料、20 底部填充材料、21 第一粘接剂层、22 第二粘接剂层、30 电路基板、31 基材、32对向电极

Claims (5)

1.底部填充材料，其为将半导体芯片搭载于电子部件之前预先贴合于半导体芯片的底部填充材料，所述半导体芯片形成有带焊料电极，所述电子部件形成有与带焊料电极相对的对向电极，
所述底部填充材料含有环氧树脂、酸酐、丙烯酸系树脂以及有机过氧化物，
丙烯酸系树脂和有机过氧化物的总质量与环氧树脂和酸酐的总质量之比为7:3~4:6，
以10℃/min的升温速度条件测定熔融粘度时的最低熔融粘度达到温度为100℃以上且110℃以下，最低熔融粘度为100Pa·s以上且5000Pa·s以下。
2.根据权利要求1所述的底部填充材料，其中，所述最低熔融粘度为1000Pa·s以上且2000Pa·s以下。
3.根据权利要求1或2所述的底部填充材料，其中，所述环氧树脂为双环戊二烯型环氧树脂，
所述酸酐为脂肪族酸酐。
4.根据权利要求1或2所述的底部填充材料，其中，所述丙烯酸系树脂为2官能（甲基）丙烯酸酯，
所述有机过氧化物为过氧化酯。
5.根据权利要求3所述的底部填充材料，其中，所述丙烯酸系树脂为2官能（甲基）丙烯酸酯，
所述有机过氧化物为过氧化酯。
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