TWI649842B - 底部塡充材料及使用其之半導體裝置的製造方法 - Google Patents

底部塡充材料及使用其之半導體裝置的製造方法 Download PDF

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TWI649842B
TWI649842B TW103131080A TW103131080A TWI649842B TW I649842 B TWI649842 B TW I649842B TW 103131080 A TW103131080 A TW 103131080A TW 103131080 A TW103131080 A TW 103131080A TW I649842 B TWI649842 B TW I649842B
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temperature
underfill material
semiconductor wafer
epoxy resin
solder
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TW103131080A
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TW201523808A (zh
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森山浩伸
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迪睿合股份有限公司
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    • C—CHEMISTRY; METALLURGY
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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Abstract

提供一種可抑制空隙產生之底部填充材料及使用其之半導體裝置之製造方法。係將底部填充材料(20)預先貼合於形成有附焊料電極之半導體晶片(10)，搭載於形成有與附焊料電極對向之對向電極的電路基板(30)，並將半導體晶片(10)與電路基板(30)熱壓接，該底部填充材料(20)含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，搭載時之儲存彈性模數為3000Pa以上，最低熔融黏度到達溫度為125℃以下。

Description

底部填充材料及使用其之半導體裝置的製造方法
本發明係關於一種用於搭載半導體晶片之底部填充材料、及使用其之半導體裝置之製造方法。
近年來，於半導體晶片之構裝方法中，為了縮短步驟，業界正研究使用在半導體IC(Integrated Circuit，積體電路)電極上貼附底部填充膜之「預供給型底部填充膜(PUF：Pre-applied Underfill Film)」。
使用該預供給型底部填充膜之搭載方法例如藉由如下方式進行(例如參照專利文獻1)。
步驟A：於晶圓上貼附底部填充膜，進行切割而獲得半導體晶片。
步驟B：於基板上進行半導體晶片之位置對準。
步驟C：藉由高溫、高壓將半導體晶片與基板壓接，藉由焊點凸塊之金屬鍵而確保傳導，及藉由底部填充膜之硬化而進行半導體晶片與基板之接著。
此種方法存在於搭載半導體晶片時容易夾帶空隙，於加熱壓接後空隙仍殘留之情況。又，即便於搭載時未產生空隙之情形，以短時間 升溫之壓接分佈中亦存在於升溫過程中產生空隙之情況。
[專利文獻1]日本特開2005-28734號公報
本發明係鑒於此種習知之實際情況而提出者，提供一種可抑制空隙產生之底部填充材料及使用其之半導體裝置之製造方法。
為了解決上述課題，本發明係一種於將形成有附焊料電極之半導體晶片搭載於形成有與上述附焊料電極對向之對向電極的電子零件時，被預先貼合於上述半導體晶片的底部填充材料，其特徵在於：含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，上述搭載時之儲存彈性模數為3000Pa以上，最低熔融黏度到達溫度為125℃以下。
又，本發明之半導體裝置之製造方法的特徵在於含有：搭載步驟：於第1溫度將形成有附焊料電極且於該電極面貼合有底部填充材料之半導體晶片搭載於形成有與上述附焊料電極對向之對向電極的電子零件；及熱壓接步驟：將上述半導體晶片與上述電子零件升溫至第2溫度進行熱壓接，其中上述底部填充材料含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，第1溫度下之儲存彈性模數為3000Pa以上，最低熔融黏度到達溫度為125℃以下。
根據本發明，由於搭載時之底部填充材料之儲存彈性模數高，最低熔融黏度到達溫度低，故可排除搭載時之空隙，並且可抑制加熱壓接時之空隙之產生。
1‧‧‧晶圓
2‧‧‧底部填充膜
3‧‧‧治具
4‧‧‧刀片
10‧‧‧半導體晶片
11‧‧‧半導體
12‧‧‧電極
13‧‧‧焊料
20‧‧‧底部填充材料
21‧‧‧接著劑層
30‧‧‧電路基板
31‧‧‧基材
32‧‧‧對向電極
圖1係示意性地表示搭載前之半導體晶片與電路基板之剖面圖。
圖2係示意性地表示搭載時之半導體晶片與電路基板之剖面圖。
圖3係示意性地表示熱壓接後之半導體晶片與電路基板之剖面圖。
圖4係表示本實施形態之半導體裝置的製造方法之流程圖。
圖5係示意性地表示在晶圓上貼附底部填充膜之步驟之立體圖。
圖6係示意性地表示切割晶圓之步驟之立體圖。
圖7係示意性地表示拾取半導體晶片之步驟之立體圖。
圖8係表示實施例之壓接分佈之曲線圖。
以下，按照下述順序對本發明之實施形態進行詳細說明。
1.底部填充材料
2.半導體裝置之製造方法
3.實施例
<1.底部填充材料>
本實施形態之底部填充材料係於將形成有附焊料電極之半導體晶片搭載於形成有與附焊料電極對向之對向電極的電子零件時，被預先貼合於半導體晶片者。
圖1係模式性地表示搭載前之半導體晶片與電路基板之剖面圖，圖2係模式性地表示搭載時之半導體晶片與電路基板之剖面圖，及 圖3係模式性地表示熱壓接後之半導體晶片與電路基板之剖面圖。
如圖1~圖3所示，本實施形態之底部填充材料20係預先貼合於形成有附焊料電極之半導體晶片10的電極面而使用，利用底部填充材料20硬化而成之接著層21，將半導體晶片10與形成有與附焊料電極對向之對向電極之電路基板30進行接合。
半導體晶片10於矽等半導體11表面形成有積體電路，並具有稱為凸塊之連接用附焊料電極。附焊料電極係於由銅等構成之電極12上接合有焊料13者，且具有將電極12厚度與焊料13厚度合計之厚度。
作為焊料，可使用Sn-37Pb共晶焊料(熔點183℃)、Sn-Bi焊料(熔點139℃)、Sn-3.5Ag(熔點221℃)、Sn-3.0Ag-0.5Cu(熔點217℃)、Sn-5.0Sb(熔點240℃)等。
電路基板30於例如硬質基板、可撓性基板等基材31上形成有電路。又，於搭載半導體晶片10之構裝部形成有對向電極32，該對向電極32在與半導體晶片10之附焊料電極對向之位置具有特定厚度。
底部填充材料20含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物。
膜形成樹脂相當於平均分子量為10000以上之高分子量樹脂，就膜形成性之觀點而言，較佳為10000~80000左右之平均分子量。作為膜形成樹脂，可使用苯氧基樹脂、環氧樹脂、改質環氧樹脂、胺基甲酸酯樹脂等各種樹脂。該等膜形成樹脂可單獨使用1種，亦可組合2種以上而使用。該等之中，就膜形成狀態、連接可靠性等觀點而言，本實施形態較佳使用苯氧基樹脂。
作為環氧樹脂，例如可列舉：倍環戊二烯型環氧樹脂、縮水甘油醚型環氧樹脂、縮水甘油胺型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、螺環型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、萜烯型環氧樹脂、四溴雙酚A型環氧樹脂、甲酚酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、α-萘酚酚醛清漆型環氧樹脂、溴化苯酚酚醛清漆型環氧樹脂等。該等環氧樹脂可單獨使用1種，亦可組合2種以上而使用。該等之中，就高接著性、耐熱性之方面而言，本實施形態較佳使用倍環戊二烯型環氧樹脂。
酸酐具有去除焊料表面之氧化膜之助熔功能，因此可獲得優異之連接可靠性。作為酸酐，例如可列舉：四丙烯基琥珀酸酐、十二烯基琥珀酸酐等脂肪族酸酐，六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐等脂環式酸酐，鄰苯二甲酸酐、偏苯三甲酸酐、均苯四甲酸二酐等芳香族酸酐等。該等環氧硬化劑可單獨使用1種，亦可組合2種以上而使用。該等環氧硬化劑之中，就該等中之焊料連接性之方面而言，較佳使用脂肪族酸酐。
又，較佳添加硬化促進劑。作為硬化促進劑之具體例，可列舉：2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑等咪唑類、1,8-二氮雙環(5,4,0)十一烯-7鹽(DBU鹽)、2-(二甲基胺基甲基)苯酚等三級胺類、三苯基膦等膦類、辛酸錫等金屬化合物等。
作為丙烯酸樹脂，可使用單官能(甲基)丙烯酸酯、2官能以上之(甲基)丙烯酸酯。作為單官能(甲基)丙烯酸酯，可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯等。作為2官能以上之(甲基)丙烯酸酯，可列舉：雙酚F-EO 改質二(甲基)丙烯酸酯、雙酚A-EO改質二(甲基)丙烯酸酯、三羥甲基丙烷PO改質(甲基)丙烯酸酯、多官能(甲基)丙烯酸胺基甲酸酯等。該等丙烯酸樹脂可單獨使用，亦可組合2種以上而使用。該等之中，本實施形態較佳使用2官能(甲基)丙烯酸酯。
作為有機過氧化物，例如可列舉：過氧化酯、過氧縮酮、過氧化氫、過氧化二烷基、過氧化二醯基、過氧化二碳酸酯等。該等有機過氧化物可單獨使用，亦可組合2種以上而使用。該等之中，本實施形態較佳使用過氧化酯。
又，作為其他添加組成物，較佳含有無機填料。藉由含有無機填料，可調整壓接時之樹脂層的流動性。作為無機填料，可使用矽石、滑石、氧化鈦、碳酸鈣、氧化鎂等。
並且，亦可視需要添加環氧系、胺基系、巰基-硫醚系、脲基系等之矽烷偶合劑。
藉由如此併用硬化反應相對較慢之環氧系、與硬化反應相對較快之丙烯酸，即便於在10秒以內到達250℃之短時間升溫分佈下進行壓接之情形時，亦可防止空隙之產生。
又，搭載底部填充材料時之儲存彈性模數為3000Pa以上。藉此，可排除搭載時之空隙。搭載時之溫度較佳為30℃以上且較底部填充材料之最低熔融黏度到達溫度高30℃以下，更具體而言，較佳為30℃以上155℃以下。
又，底部填充材料之最低熔融黏度到達溫度為125℃以下。藉此，可抑制加熱壓接時之空隙產生。最低熔融黏度到達溫度下之最低熔 融黏度較佳為1000Pa‧s以上2000Pa‧s以下。
其次，對上述底部填充材料形成為膜狀之預供給型底部填充膜之製造方法進行說明。首先，使含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物之接著劑組成物溶解於溶劑中。作為溶劑，可使用甲苯、乙酸乙酯等、或該等之混合溶劑。於製備樹脂組成物後，利用棒式塗佈機、塗佈裝置等塗佈於剝離基材上。
剝離基材例如係由如下積層構造構成，而防止組成物之乾燥，並且維持組成物之形狀，上述積層構造係將聚矽氧等剝離劑塗佈於PET(Poly Ethylene Terephthalate，聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene，延伸聚丙烯)、PMP(Poly-4-methylpentene-1，聚-4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene，聚四氟乙烯)等而成。
其次，藉由熱烘箱、加熱乾燥裝置等使塗佈於剝離基材上之樹脂組成物乾燥。藉此，可獲得特定厚度之預供給型底部填充膜。
<2.半導體裝置之製造方法>
其次，對使用上述預供給型底部填充膜之半導體裝置之製造方法進行說明。
圖4係表示本實施形態之半導體裝置的製造方法之流程圖。如圖4所示，本實施形態之半導體裝置之製造方法含有：底部填充膜貼附步驟S1、切割步驟S2、半導體晶片搭載步驟S3、及熱壓接步驟S4。
圖5係模式性地表示在晶圓上貼附底部填充膜之步驟的立體圖。如圖5所示，底部填充膜貼附步驟S1係藉由具有大於晶圓1直徑之直徑且具有環狀或框狀框架的治具3以固定晶圓1，於晶圓1上貼附底部填 充膜2。底部填充膜2係於切割晶圓1時保護並固定晶圓1，於拾取時作為保持之切割膠帶發揮功能。再者，於晶圓1內嵌製作有大量IC(Integrated Circuit)，於晶圓1之接著面對每個如圖1所示般藉由劃線劃分之半導體晶片10設置附焊料電極。
圖6係模式性地表示切割晶圓之步驟之立體圖。如圖6所示，切割步驟S2係沿劃線按壓刀片4來切削晶圓1，而分割成各個半導體晶片。
圖7係模式性地表示拾取半導體晶片之步驟之立體圖。如圖7所示，各附底部填充膜之半導體晶片10係於保持底部填充膜之狀態下被拾取。
如圖2所示，半導體晶片搭載步驟S3係將附底部填充膜之半導體晶片10與電路基板30經由底部填充膜進行配置。又，將附底部填充膜之半導體晶片10以附焊料電極與對向電極32對向之方式進行位置對準而配置。然後，藉由加熱接合機，於使底部填充膜產生流動性但未發生正式硬化之程度的特定溫度、壓力、時間之條件下進行加熱按壓而搭載。
搭載時之溫度條件較佳為30℃以上且較底部填充膜之最低熔融黏度到達溫度高30℃以下，更具體而言，較佳為30℃以上155℃以下。又，壓力條件較佳為50N以下，更佳為40N以下。又，時間條件較佳為0.1秒以上10秒以下，更佳為0.1秒以上1.0秒以下。藉此，可成為不使附焊料電極熔融而與電路基板30側之電極接觸之狀態，可成為底部填充膜未完全硬化之狀態。又，由於在低溫下進行固定，故可抑制空隙之產生，減少對半導體晶片10之損壞。
以下之熱壓接步驟S4係於以特定升溫速度自第1溫度升溫至第2溫度之接合條件下，使附焊料電極之焊料熔融而形成金屬鍵，並且使底部填充膜完全硬化。
又，升溫速度較佳為50℃/sec以上150℃/sec以下。又，第2溫度亦取決於焊料之種類，較佳為200℃以上280℃以下，更佳為220℃以上260℃以下。又，時間條件較佳為5秒以上500秒以下，更佳為5秒以上100秒以下。藉此，可使附焊料電極與基板電極進行金屬鍵結，並且使底部填充膜完全硬化，而將半導體晶片10之電極與電路基板30之電極電性地、機械性地連接。
又，於熱壓接步驟S4中，接合頭至搭載後之底部填充膜的開始熔融溫度為止係藉由樹脂之彈性模數而保持為一定高度，其後因升溫所伴隨之樹脂熔融而瞬間下降，到達頭之最低點。該最低點係根據頭之下降速度與樹脂之硬化速度的關係而決定。樹脂硬化進一步進行後，頭之高度隨著樹脂及頭之熱膨脹而緩慢地上升。如此，藉由在自第1溫度升溫至第2溫度之時間內使接合頭下降至最低點，可抑制隨著樹脂熔融之空隙產生。
如此，本實施形態之半導體裝置之製造方法係藉由將底部填充材料20預先貼合於形成有附焊料電極之半導體晶片10，而可排除搭載時之空隙，並且可抑制加熱壓接時之空隙產生，上述底部填充材料20含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，搭載時之儲存彈性模數為3000Pa以上，最低熔融黏度到達溫度為125℃以下。
再者，上述實施形態係使底部填充膜作為切割膠帶發揮功 能，但並不限定於此，亦可另外使用切割膠帶，於切割後使用底部填充膜進行覆晶構裝。
[其他實施形態]
又，本技術亦可應用於藉由向設置於半導體晶片之小孔內填充金屬，而電連接堆積成夾層狀之多個晶片基板的TSV(Through Silicon Via，矽穿孔)技術。
即，亦可應用於將具有形成有附焊料電極之第一面、及於第一面之相反側形成有與附焊料電極對向之對向電極的第二面之多個晶片基板積層的半導體裝置之製造方法。
於此情形時，於第一晶片基板之第一面側貼附有底部填充膜之狀態下，搭載於第二晶片基板之第二面。其後，可藉由在附焊料電極之焊料的熔點以上之溫度將第一晶片基板之第一面與第二晶片基板之第二面熱壓接，而獲得積層有多個晶片基板之半導體裝置。
[實施例]
<3.實施例>
以下，對本發明之實施例進行說明。於本實施例中，製作預供給型底部填充膜，對最低熔融黏度到達溫度、及搭載溫度(60℃)之儲存彈性模數進行測量。然後，使用底部填充膜將具有附焊料電極之IC晶片、及具有與其對向之電極的IC基板連接而製作構裝體，對空隙進行評價。再者，本發明並不限定於該等實施例。
最低熔融黏度到達溫度及搭載溫度下之儲存彈性模數之測量、構裝體之製作、及空隙之評價係以如下方式進行。
[最低熔融黏度到達溫度、及搭載溫度下之儲存彈性模數之測量]
針對各底部填充膜，利用流變儀(TA公司製造之ARES)於5℃/min、1Hz之條件下測量樣品之最低熔融黏度到達溫度、及於搭載溫度(60℃)之儲存彈性模數。
[構裝體之製作]
於50℃、0.5MPa之條件下利用壓製機將底部填充膜貼合於晶圓上，進行切割而獲得具有附焊料電極之IC晶片。
IC晶片係大小為7mm，厚度為200μm，且具有周邊配置之凸塊(30μm、85μm間距、280針)者，該周邊配置之凸塊於厚度20μm之由Cu構成的電極前端形成有厚度16μm之焊料(Sn-3.5Ag、熔點221℃)。
又，與其對向之IC基板同樣具有大小為7mm、厚度200μm且形成有由厚度20μm之Cu構成之電極的周邊配置之凸塊(30μm、85μm間距、280針)。
其次，於60℃、0.5秒、30N之條件下利用覆晶接合機將IC晶片搭載於IC基板上。
其後，如圖8所示之壓接分佈般，於10秒內使溫度自60℃上升至250℃，利用覆晶接合機進行熱壓接。又，於自60℃升溫至250℃之時間內，使接合頭下降至最低點(30N)。進而，於150℃、2小時之條件下進行硬化(cure)而獲得構裝體。再者，使用覆晶接合機時之溫度係藉由熱電偶測量樣品之實際溫度而得者。
[空隙之評價]
利用SAT(Scanning Acoustic Tomograph，超音波影像裝置)觀察各構裝體，將空隙為IC晶片面積之1%以下者設為○，將空隙超過IC晶片面積之1%者設為×。
[實施例1]
調配苯氧基樹脂(品名：PKHH，聯合碳業公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)23.3質量份、酸酐(品名：MH-700，新日本理化公司製造)13.7質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.1質量份、丙烯酸樹脂(品名：DCP，新中村化學公司製造)8.7質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.5質量份、填料A(品名：SO-E5，Admatechs公司製造)35.0質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於表1中表示實施例1之底部填充膜之評價結果。底部填充膜之最低熔融黏度到達溫度為125℃。又，搭載溫度下之儲存彈性模數為3300Pa。又，使用底部填充膜製作之構裝體的空隙之評價為○。
[實施例2]
調配苯氧基樹脂(品名：PKHH，聯合碳業公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)17.5質量份、酸酐(品 名：MH-700，新日本理化公司製造)10.3質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.1質量份、丙烯酸樹脂(品名：DCP，新中村化學公司製造)17.5質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.9質量份、填料A(品名：SO-E5，Admatechs公司製造)35.0質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於表1中表示實施例2之底部填充膜之評價結果。底部填充膜之最低熔融黏度到達溫度為118℃。又，搭載溫度下之儲存彈性模數為3300Pa。又，使用底部填充膜製作之構裝體的空隙之評價為○。
[實施例3]
調配苯氧基樹脂(品名：PKHH，聯合碳業公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)18.3質量份、酸酐(品名：MH-700，新日本理化公司製造)10.8質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.1質量份、丙烯酸樹脂(品名：DCP，新中村化學公司製造)6.8質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.4質量份、填料A(品名：SO-E5，Admatechs公司製造)44.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm 之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於表1中表示實施例3之底部填充膜之評價結果。底部填充膜之最低熔融黏度到達溫度為125℃。又，搭載溫度下之儲存彈性模數為4000Pa。又，使用底部填充膜製作之構裝體的空隙之評價為○。
[比較例1]
調配苯氧基樹脂(品名：PKHH，聯合碳業公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)29.0質量份、酸酐(品名：MH-700，新日本理化公司製造)17.1質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.1質量份、填料A(品名：SO-E5，Admatechs公司製造)35.0質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於表1中表示比較例1之底部填充膜之評價結果。底部填充膜之最低熔融黏度到達溫度為135℃。又，搭載溫度下之儲存彈性模數為3300Pa。又，使用底部填充膜製作之構裝體的空隙之評價為×。
[比較例2]
調配苯氧基樹脂(品名：PKHH，聯合碳業公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)25.9質量份、酸酐(品名：MH-700，新日本理化公司製造)15.3質量份、咪唑(品名：2MZ-A， 四國化成工業公司製造)0.1質量份、丙烯酸樹脂(品名：DCP，新中村化學公司製造)9.6質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.6質量份、填料A(品名：SO-E5，Admatechs公司製造)30.0質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於表1中表示比較例2之底部填充膜之評價結果。底部填充膜之最低熔融黏度到達溫度為125℃。又，搭載溫度下之儲存彈性模數為2800Pa。又，使用底部填充膜製作之構裝體的空隙之評價為×。
比較例1於晶片搭載後未觀察到空隙，但於熱壓接後觀察到空隙。又，比較例2於晶片搭載後觀察到空隙，於熱壓接後亦觀察到空隙。 另一方面，實施例1~3可藉由使用底部填充膜而抑制空隙之產生，該底部填充膜含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，搭載時之儲存彈性模數為3000Pa以上，最低熔融黏度到達溫度為125℃以下。

Claims (6)

  1. 一種底部填充材料，係於將形成有附焊料電極之半導體晶片搭載於形成有與該附焊料電極對向之對向電極的電子零件時，被預先貼合於該半導體晶片，該底部填充材料含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，該搭載時之儲存彈性模數為3000Pa以上，最低熔融黏度到達溫度為125℃以下。
  2. 如申請專利範圍第1項之底部填充材料，其中該搭載時之溫度為30℃以上155℃以下。
  3. 如申請專利範圍第1或2項之底部填充材料，其中該環氧樹脂為倍環戊二烯型環氧樹脂，該酸酐為脂肪族酸酐。
  4. 如申請專利範圍第1或2項之底部填充材料，其中該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  5. 如申請專利範圍第3項之底部填充材料，其中該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  6. 一種半導體裝置之製造方法，其含有：搭載步驟：於第1溫度將形成有附焊料電極且於該電極面貼合有底部填充材料之半導體晶片搭載於形成有與該附焊料電極對向之對向電極的電子零件；及熱壓接步驟：將該半導體晶片與該電子零件升溫至第2溫度進行熱壓接，該底部填充材料含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，第1溫度下之儲存彈性模數為3000Pa以上，最低熔融黏度到達溫度為125℃以下。
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