TWI637021B - 底部塡充材料及使用其之半導體裝置的製造方法 - Google Patents

底部塡充材料及使用其之半導體裝置的製造方法 Download PDF

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TWI637021B
TWI637021B TW103131081A TW103131081A TWI637021B TW I637021 B TWI637021 B TW I637021B TW 103131081 A TW103131081 A TW 103131081A TW 103131081 A TW103131081 A TW 103131081A TW I637021 B TWI637021 B TW I637021B
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temperature
underfill material
item
epoxy resin
resin
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TW103131081A
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English (en)
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TW201522485A (zh
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小山太一
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迪睿合股份有限公司
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C08G59/4284—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof together with other curing agents
    • C—CHEMISTRY; METALLURGY
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    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
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    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C09J133/04—Homopolymers or copolymers of esters
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C09J133/16—Homopolymers or copolymers of esters containing halogen atoms
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    • C09J163/08—Epoxidised polymerised polyenes
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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    • C08J2333/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
    • C08J2333/14—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
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Abstract

本發明提供一種可實現無空隙構裝及良好焊接性之底部填充材料、及使用其之半導體裝置之製造方法。本發明係將底部填充材料(20)預先貼合於形成有附焊料電極之半導體晶片(10)，搭載於形成有與附焊料電極對向之對向電極的電路基板(30)，於以既定升溫速度自第1溫度升溫至第2溫度之接合條件下將半導體晶片(10)與電路基板(30)熱壓接，該底部填充材料(20)含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，最低熔融黏度為1000Pa．s以上2000Pa．s以下，較最低熔融黏度到達溫度高10℃之溫度至較該溫度高10℃之溫度的熔融黏度之斜率為900Pa．s/℃以上3100Pa．s/℃以下。

Description

底部填充材料及使用其之半導體裝置的製造方法
本發明係關於一種用於搭載半導體晶片之底部填充材料、及使用其之半導體裝置之製造方法。
近年來，於半導體晶片之構裝方法中，為了縮短步驟，業界正研究使用在半導體IC(Integrated Circuit，積體電路)電極上貼附底部填充膜之「預供給型底部填充膜(PUF：Pre-applied Underfill Film)」。
使用該預供給型底部填充膜之搭載方法例如藉由如下方式進行(例如參照專利文獻1)。
步驟A：於晶圓上貼附底部填充膜，進行切割而獲得半導體晶片。
步驟B：於基板上進行半導體晶片之位置對準。
步驟C：藉由高溫、高壓將半導體晶片與基板壓接，藉由焊點凸塊之金屬鍵而確保傳導，及藉由底部填充膜之硬化而進行半導體晶片與基板之接著。
習知之底部填充膜因為由單一之硬化系形成，故而難以細微地控制其熔融狀態至硬化之行為，無法使其熔融至硬化之行為符合實際覆 晶接合之條件。其結果產生空隙，又，顯示出凸塊間之樹脂嚙入等接合不良。
[專利文獻1]日本特開2005-28734號公報
本發明係鑒於此種習知之實際情況而提出者，提供一種可實現無空隙構裝及良好焊接性之底部填充材料、及使用其之半導體裝置之製造方法。
為了解決上述課題，本發明係一種被用於以既定升溫速度自第1溫度升溫至第2溫度之接合條件的底部填充材料，其特徵在於：含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，最低熔融黏度為1000Pa．s以上2000Pa．s以下，從較最低熔融黏度到達溫度高10℃之溫度至較該溫度高10℃之溫度的熔融黏度之斜率為900Pa．s/℃以上3100Pa．s/℃以下。
又，本發明之半導體裝置之製造方法的特徵在於具有：搭載步驟：將形成有附焊料電極且於該電極面貼合有底部填充材料之半導體晶片搭載於形成有與上述附焊料電極對向之對向電極的電子零件；及熱壓接步驟：將上述半導體晶片與上述電子零件以既定升溫速度自第1溫度升溫至第2溫度而進行熱壓接，上述底部填充材料含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，最低熔融黏度為1000Pa．s以上2000Pa．s以下，從較最低熔融黏度到 達溫度高10℃之溫度至較該溫度高10℃之溫度的熔融黏度之斜率為900Pa．s/℃以上3100Pa．s/℃以下。
根據本發明，底部填充材料具有既定之最低熔融黏度、及高於最低熔融黏度到達溫度之溫度下的既定熔融黏度之斜率，藉此可符合以既定升溫速度自第1溫度升溫至第2溫度之接合條件，可實現無空隙構裝及良好焊接性。
1‧‧‧晶圓
2‧‧‧底部填充膜
3‧‧‧治具
4‧‧‧刀片
10‧‧‧半導體晶片
11‧‧‧半導體
12‧‧‧電極
13‧‧‧焊料
20‧‧‧底部填充材料
21‧‧‧接著劑層
30‧‧‧電路基板
31‧‧‧基材
32‧‧‧對向電極
圖1係示意地表示搭載前之半導體晶片與電路基板之剖面圖。
圖2係示意地表示搭載時之半導體晶片與電路基板之剖面圖。
圖3係示意地表示熱壓接後之半導體晶片與電路基板之剖面圖。
圖4係表示接合條件之一例之曲線圖。
圖5係表示符合圖4所示之接合條件的底部填充材料之熔融黏度曲線的曲線圖。
圖6係表示本實施形態之半導體裝置之製造方法的流程圖。
圖7係示意地表示在晶圓上貼附底部填充膜之步驟之立體圖。
圖8係示意地表示切割晶圓之步驟的立體圖。
圖9係示意地表示拾取半導體晶片之步驟的立體圖。
圖10係表示底部填充材料之樣品之熔融黏度曲線的曲線圖。
以下，按照下述順序對本發明之實施形態進行詳細說明。
1.底部填充材料
2.半導體裝置之製造方法
3.實施例
<1.底部填充材料>
本實施形態之底部填充材料係於將形成有附焊料電極之半導體晶片搭載於形成有與附焊料電極對向之對向電極的電子零件之前，預先貼合於半導體晶片者。
圖1係示意地表示搭載前之半導體晶片與電路基板之剖面圖，圖2係示意地表示搭載時之半導體晶片與電路基板之剖面圖，及圖3係示意地表示熱壓接後之半導體晶片與電路基板之剖面圖。
如圖1~圖3所示，本實施形態之底部填充材料20係預先貼合於形成有附焊料電極之半導體晶片10的電極面而使用，利用底部填充材料20硬化而成之接著層21，將半導體晶片10與形成有與附焊料電極對向之對向電極之電路基板30進行接合。
半導體晶片10於矽等半導體11表面形成有積體電路，並具有稱為凸塊之連接用附焊料電極。附焊料電極係於由銅等構成之電極12上接合有焊料13者，且具有將電極12厚度與焊料13厚度合計之厚度。
作為焊料，可使用Sn-37Pb共晶焊料(熔點183℃)、Sn-Bi焊料(熔點139℃)、Sn-3.5Ag(熔點221℃)、Sn-3.0Ag-0.5Cu(熔點217℃)、Sn-5.0Sb(熔點240℃)等。
電路基板30係例如硬質基板、可撓性基板等基材31上形成 電路。又，於搭載半導體晶片10之構裝部形成有對向電極32，該對向電極32在與半導體晶片10之附焊料電極對向之位置形成具有既定厚度。
底部填充材料20含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物。
膜形成樹脂相當於重量平均分子量為10×104以上之高分子量樹脂，就膜形成性之觀點而言，較佳為10×104~100×104之重量平均分子量。作為膜形成樹脂，可使用丙烯酸橡膠聚合物、苯氧基樹脂、環氧樹脂、改質環氧樹脂、胺基甲酸酯樹脂等各種樹脂。該等膜形成樹脂可單獨使用1種，亦可組合2種以上而使用。該等之中，就膜強度及接著性之觀點而言，本實施形態較佳使用具有縮水甘油基之丙烯酸橡膠聚合物。
作為環氧樹脂，例如可列舉：四(縮水甘油氧基苯基)乙烷、四(縮水甘油氧基甲基苯基)乙烷、四(縮水甘油氧基苯基)甲烷、三(縮水甘油氧基苯基)乙烷、三(縮水甘油氧基苯基)甲烷等環氧丙基醚型環氧樹脂、二環戊二烯型環氧樹脂、縮水甘油胺型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、螺環型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、萜烯型環氧樹脂、四溴雙酚A型環氧樹脂、甲酚酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、α-萘酚酚醛清漆型環氧樹脂、溴化苯酚酚醛清漆型環氧樹脂等。該等環氧樹脂可單獨使用1種，亦可組合2種以上而使用。該等之中，就高接著性、耐熱性之方面而言，本實施形態較佳使用環氧丙基醚型環氧樹脂。
酸酐具有去除焊料表面之氧化膜之助熔功能，因此可獲得優異之連接可靠性。作為酸酐，例如可列舉：六氫鄰苯二甲酸酐、甲基四氫 鄰苯二甲酸酐等脂環式酸酐，四丙烯基琥珀酸酐、十二烯基琥珀酸酐、等脂肪族酸酐，鄰苯二甲酸酐、偏苯三甲酸酐、均苯四甲酸二酐等芳香族酸酐等。該等環氧硬化劑可單獨使用1種，亦可組合2種以上而使用。該等環氧硬化劑之中，就該等中之焊料連接性之方面而言，較佳使用脂環式酸酐。
又，較佳添加硬化促進劑。作為硬化促進劑之具體例，可列舉：1,8-二氮雙環(5,4,0)十一烯-7鹽(DBU鹽)、2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑等咪唑類、2-(二甲基胺基甲基)苯酚等三級胺類、三苯基膦等膦類、辛酸錫等金屬化合物等。
作為丙烯酸樹脂，可使用單官能(甲基)丙烯酸酯、2官能以上之(甲基)丙烯酸酯。作為單官能(甲基)丙烯酸酯，可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯等。作為2官能以上之(甲基)丙烯酸酯，可列舉：茀系丙烯酸酯、雙酚F-EO改質二(甲基)丙烯酸酯、雙酚A-EO改質二(甲基)丙烯酸酯、三羥甲基丙烷PO改質(甲基)丙烯酸酯、多官能(甲基)丙烯酸胺基甲酸酯等。該等丙烯酸樹脂可單獨使用，亦可組合2種以上而使用。該等之中，本實施形態較佳使用茀系丙烯酸酯。
作為有機過氧化物，例如可列舉：過氧縮酮、過氧化酯、過氧化氫、過氧化二烷基、過氧化二醯基、過氧化二碳酸酯等。該等有機過氧化物可單獨使用，亦可組合2種以上而使用。該等之中，本實施形態較佳使用過氧縮酮。
又，作為其他添加組成物，較佳含有無機填料。藉由含有無 機填料，可調整壓接時之樹脂層的流動性。作為無機填料，可使用矽石、滑石、氧化鈦、碳酸鈣、氧化鎂等。
亦可進而視需要添加環氧系、胺基系、巰基-硫醚系、脲基系等之矽烷偶合劑。
藉由如此併用硬化反應相對較慢之環氧系、與硬化反應相對較快之丙烯酸，可符合以既定升溫速度自第1溫度升溫至第2溫度之接合條件，因此可實現無空隙構裝及良好焊接性。
圖4係表示接合條件之一例之曲線圖。該接合條件係以50℃/sec以上150℃/sec以下之升溫速度自溫度T1升溫至250℃。此處，溫度T1較佳與底部填充材料之最低熔融黏度大致相同，較佳為50℃以上150℃以下。
又，圖5係表示符合圖4所示之接合條件的底部填充材料之熔融黏度曲線的曲線圖。該熔融黏度曲線係利用流變儀於5℃/min、1Hz之條件下測量底部填充材料而得者。
符合該接合條件之底部填充材料的最低熔融黏度η為1000Pa．s以上2000Pa．s以下。藉此，可抑制加熱壓接時之空隙產生。又，底部填充材料之最低熔融黏度到達溫度較佳為125℃以下。
又，底部填充材料之較最低熔融黏度到達溫度高10℃之溫度至較該溫度高10℃之溫度的熔融黏度之斜率為900Pa．s/℃以上3100Pa．s/℃以下。藉此，即便於以50℃/sec以上150℃/sec以下之升溫速度升溫的接合條件下，亦可實現無空隙構裝及良好焊接性。
又，最低熔融黏度到達溫度較佳為與接合條件之溫度T1大 致相同。藉此，可獲得成為與接合條件吻合之硬化行為的底部填充材料。
又，丙烯酸樹脂與有機過氧化物之合計質量、與環氧樹脂與酸酐之合計質量的比較佳為7：3~4：6。藉此，即便於以50℃/sec以上150℃/sec以下之升溫速度升溫的接合條件下，亦可獲得實現無空隙構裝及良好焊接性的底部填充材料。
其次，對上述底部填充材料形成為膜狀之預供給型底部填充膜之製造方法進行說明。首先，使含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物之接著劑組成物溶解於溶劑中。作為溶劑，可使用甲苯、乙酸乙酯等、或該等之混合溶劑。於製備樹脂組成物後，利用棒式塗佈機、塗佈裝置等塗佈於剝離基材上。
剝離基材例如係由如下積層構造構成，而防止組成物之乾燥，並且維持組成物之形狀，上述積層構造係將聚矽氧等剝離劑塗佈於PET(Poly Ethylene Terephthalate，聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene，延伸聚丙烯)、PMP(Poly-4-methylpentene-1，聚-4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene，聚四氟乙烯)等而成。
其次，藉由熱烘箱、加熱乾燥裝置等使塗佈於剝離基材上之樹脂組成物乾燥。藉此，可獲得既定厚度之預供給型底部填充膜。
<2.半導體裝置之製造方法>
其次，對使用上述預供給型底部填充膜之半導體裝置之製造方法進行說明。
圖6係表示本實施形態之半導體裝置之製造方法之流程圖。如圖6所示，本實施形態之半導體裝置之製造方法包括：底部填充膜 貼附步驟S1、切割步驟S2、半導體晶片搭載步驟S3、及熱壓接步驟S4。
圖7係示意地表示在晶圓上貼附底部填充膜之步驟的立體圖。如圖7所示，底部填充膜貼附步驟S1係藉由具有大於晶圓1直徑之直徑且具有環狀或框狀框架的治具3以固定晶圓1，於晶圓1上貼附底部填充膜2。底部填充膜2係於切割晶圓1時保護並固定晶圓1，於拾取時作為保持之切割膠帶發揮功能。再者，於晶圓1內嵌製作有大量IC(Integrated Circuit)，於晶圓1之接著面對每個如圖1所示般藉由劃線劃分之半導體晶片10設置附焊料電極。
圖8係示意地表示切割晶圓之步驟之立體圖。如圖8所示，切割步驟S2係沿劃線按壓刀片4來切削晶圓1，而分割成各個半導體晶片。
圖9係示意地表示拾取半導體晶片之步驟之立體圖。如圖9所示，各附底部填充膜之半導體晶片10係於保持底部填充膜之狀態下被拾取。
如圖2所示，半導體晶片搭載步驟S3係將附底部填充膜之半導體晶片10與電路基板30經由底部填充膜進行配置。又，將附底部填充膜之半導體晶片10以附焊料電極與對向電極32對向之方式進行位置對準而配置。然後，藉由加熱接合機，於使底部填充膜產生流動性但未發生正式硬化之程度的既定溫度、壓力、時間之條件下進行加熱按壓而搭載。
搭載時之溫度條件較佳為30℃以上155℃以下。又，壓力條件較佳為50N以下，更佳為40N以下。又，時間條件較佳為0.1秒以上10秒以下，更佳為0.1秒以上且1.0秒以下。藉此，可成為不使附焊料電極熔融而與電路基板30側之電極接觸之狀態，可成為底部填充膜未完全硬化之 狀態。又，由於在低溫下進行固定，故可抑制空隙之產生，減少對半導體晶片10之損壞。
以下之熱壓接步驟S4係於以既定升溫速度自第1溫度升溫至第2溫度之接合條件下，使附焊料電極之焊料熔融而形成金屬鍵，並且使底部填充膜完全硬化。
第1溫度較佳為與底部填充材料之最低熔融黏度到達溫度大致相同，較佳為50℃以上150℃以下。藉此，可使底部填充材料之硬化行為與接合條件吻合，可抑制空隙之產生。
又，升溫速度較佳為50℃/sec以上150℃/sec以下。又，第2溫度亦取決於焊料之種類，較佳為200℃以上280℃以下，更佳為220℃以上260℃以下。藉此，可使附焊料電極與基板電極進行金屬鍵結，並且使底部填充膜完全硬化，而將半導體晶片10之電極與電路基板30之電極電性地、機械性地連接。
又，於熱壓接步驟S4中，接合頭至搭載後之底部填充膜的開始熔融溫度為止係藉由樹脂之彈性模數而保持為一定高度，其後因升溫所伴隨之樹脂熔融而瞬間下降，到達頭之最低點。該最低點係根據頭之下降速度與樹脂之硬化速度的關係而決定。樹脂硬化進一步進行後，頭之高度隨著樹脂及頭之熱膨脹而緩慢地上升。如此，藉由在自第1溫度升溫至第2溫度之時間內使接合頭下降至最低點，可抑制隨著樹脂熔融之空隙產生。
如此，本實施形態之半導體裝置之製造方法係藉由將底部填充材料20預先貼合於形成有附焊料電極之半導體晶片10，而可實現無空隙 構裝及良好之焊接性，上述底部填充材料20含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，最低熔融黏度為1000Pa．s以上2000Pa．s以下，較最低熔融黏度到達溫度高10℃之溫度至較該溫度高10℃之溫度的熔融黏度之斜率為900Pa．s/℃以上3100Pa．s/℃以下。
再者，上述實施形態係使底部填充膜作為切割膠帶發揮功能，但並不限定於此，亦可另外使用切割膠帶，於切割後使用底部填充膜進行覆晶構裝。
[其他實施形態]
又，本技術亦可應用於藉由向設置於半導體晶片之小孔內填充金屬，而電連接堆積成夾層狀之多個晶片基板的TSV(Through Silicon Via，矽穿孔)技術。
即，亦可應用於將具有形成有附焊料電極之第一面、及於第一面之相反側形成有與附焊料電極對向之對向電極的第二面之多個晶片基板積層的半導體裝置之製造方法。
於此情形時，於第一晶片基板之第一面側貼附有底部填充膜之狀態下，搭載於第二晶片基板之第二面。其後，可藉由在附焊料電極之焊料的熔點以上之溫度將第一晶片基板之第一面與第二晶片基板之第二面熱壓接，而獲得積層有多個晶片基板之半導體裝置。
[實施例]
<3.實施例>
以下，對本發明之實施例進行說明。於本實施例中，製作預供給型底部填充膜，測量最低熔融黏度，算出最低熔融黏度到達溫度+10℃~最低熔 融黏度到達溫度+20℃之溫度範圍內的熔融黏度之斜率。然後，使用底部填充膜將具有附焊料電極之IC晶片、與具有與其對向之電極的IC基板連接而製作構裝體，對空隙及焊接狀態進行評價。再者，本發明並不限定於該等實施例。
最低熔融黏度及熔融黏度之斜率之測量、構裝體之製作、空隙之評價、焊接之評價係以如下方式進行。
[最低熔融黏度之測量、及熔融黏度之斜率之算出]
針對各底部填充膜，利用流變儀(TA公司製造之ARES)於5℃/min、1Hz之條件下測量樣品之最低熔融黏度及最低熔融黏度到達溫度。然後，算出最低熔融黏度到達溫度+10℃~最低熔融黏度到達溫度+20℃之溫度範圍內的熔融黏度之斜率。
[構裝體之製作]
於50℃、0.5MPa之條件下利用壓製機將底部填充膜貼合於晶圓上，進行切割而獲得具有附焊料電極之IC晶片。
IC晶片係大小為7mm□，厚度為200μm，且具有周邊配置之凸塊( 30μm、85μm間距、280針)者，該周邊配置之凸塊於厚度20μm之由Cu構成的電極前端形成有厚度16μm之焊料(Sn-3.5Ag、熔點221℃)。
又，與其對向之IC基板同樣具有大小為7mm□、厚度200μm且形成有由厚度20μm之Cu構成之電極的周邊配置之凸塊( 30μm、85μm間距、280針)。
其次，於60℃、0.5秒、30N之條件下利用覆晶接合機將IC 晶片搭載於IC基板上。
其後，如圖4所示之接合條件般，以50℃/sec之升溫速度自底部填充膜之最低熔融黏度到達溫度升溫至250℃，利用覆晶接合機進行熱壓接。又，於自最低熔融黏度到達溫度升溫至250℃之時間內，使接合頭下降至最低點(30N)。進而，於150℃、2小時之條件下進行硬化(cure)而獲得第一構裝體。又，同樣以150℃/sec之升溫速度自底部填充膜之最低熔融黏度到達溫度升溫至250℃，利用覆晶接合機進行熱壓接而硬化，獲得第二構裝體。再者，使用覆晶接合機時之溫度係藉由熱電偶測量樣品之實際溫度而得者。
[空隙之評價]
利用SAT(Scanning Acoustic Tomograph，超音波影像裝置)觀察以50℃/sec之升溫速度進行熱壓接之第一構裝體、及以150℃/sec之升溫速度進行熱壓接之第二構裝體。將第一構裝體及第二構裝體兩者均未產生空隙之情況評價為「○」，將任一構裝體產生空隙之情況評價為「×」。通常，若產生空隙，則對長期可靠性造成不良影響之可能性變高。
[焊接之評價]
將以50℃/sec之升溫速度進行熱壓接之第一構裝體、及以150℃/sec之升溫速度進行熱壓接之第二構裝體的樣品切斷，進行剖面研磨，利用SEM(Scanning Electron Microscope，掃描電子顯微鏡)觀察IC晶片之電極與IC基板之電極間的焊料狀態。將第一構裝體及第二構裝體兩者之焊料連接、焊料潤濕均良好之狀態評價為「○」，將任一構裝體之焊料連接或焊料潤濕不充分之狀態評價為「×」。
[實施例1]
調配作為膜形成樹脂之丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)40質量份、環氧樹脂(品名：JER1031S，三菱化學公司製造)20質量份、酸酐(品名：Rikacid HNA-100，新日本理化公司製造)10質量份、作為硬化促進劑之咪唑(品名：U-CAT-5002，三亞普羅公司製造)1質量份、丙烯酸樹脂(品名：OGSOL EA-0200，大阪有機化學公司製造)68質量份、有機過氧化物(品名：Perhexa V，日油公司製造)2質量份、及填料(品名：艾羅技R202，日本艾羅技公司製造)15質量份，而製備丙烯酸樹脂/環氧樹脂為70/30之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於圖10中表示實施例1之底部填充膜之熔融黏度曲線。又，於表1中表示實施例1之底部填充膜之評價結果。底部填充膜之最低熔融黏度為1490Pa．s，最低熔融黏度到達溫度為113℃。又，於123℃~133℃之熔融黏度之斜率為3100Pa．s/℃。又，使用底部填充膜製作之構裝體的空隙之評價為○，焊接評價為○。
[實施例2]
調配作為膜形成樹脂之丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)40質量份、環氧樹脂(品名：JER1031S，三菱化學公司製造)30質量份、酸酐(品名：Rikacid HNA-100，新日本理化公司製造)20質量份、作為硬化促進劑之咪唑(品名：U-CAT-5002，三亞普羅 公司製造)1質量份、丙烯酸樹脂(品名：OGSOL EA-0200，大阪有機化學公司製造)49質量份、有機過氧化物(品名：Perhexa V，日油公司製造)1質量份、及填料(品名：艾羅技R202，日本艾羅技公司製造)15質量份，而製備丙烯酸樹脂/環氧樹脂為50/50之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於圖10中表示實施例2之底部填充膜之熔融黏度曲線。又，於表1中表示實施例2之底部填充膜之評價結果。底部填充膜之最低熔融黏度為1330Pa．s，最低熔融黏度到達溫度為112℃。又，於122℃~132℃之熔融黏度之斜率為1700Pa．s/℃。又，使用底部填充膜製作之構裝體的空隙之評價為○，焊接評價為○。
[實施例3]
調配作為膜形成樹脂之丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)40質量份、環氧樹脂(品名：JER1031S，三菱化學公司製造)45質量份、酸酐(品名：Rikacid HNA-100，新日本理化公司製造)15質量份、作為硬化促進劑之咪唑(品名：U-CAT-5002，三亞普羅公司製造)1質量份、丙烯酸樹脂(品名：OGSOL EA-0200，大阪有機化學公司製造)39質量份、有機過氧化物(品名：Perhexa V，日油公司製造)1質量份、及填料(品名：艾羅技R202，日本艾羅技公司製造)15質量份，而製備丙烯酸樹脂/環氧樹脂為50/50之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾 燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於圖10中表示實施例3之底部填充膜的熔融黏度曲線。又，於表1中表示實施例3之底部填充膜之評價結果。底部填充膜之最低熔融黏度為1390Pa．s，最低熔融黏度到達溫度為113℃。又，於123℃~133℃之熔融黏度之斜率為900Pa．s/℃。又，使用底部填充膜製作之構裝體的空隙之評價為○，焊接評價為○。
[比較例1]
調配作為膜形成樹脂之丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)40質量份、環氧樹脂(品名：JER1031S，三菱化學公司製造)13質量份、酸酐(品名：Rikacid HNA-100，新日本理化公司製造)7質量份、作為硬化促進劑之咪唑(品名：U-CAT-5002，三亞普羅公司製造)1質量份、丙烯酸樹脂(品名：OGSOL EA-0200，大阪有機化學公司製造)76質量份、有機過氧化物(品名：Perhexa V，日油公司製造)4質量份、及填料(品名：艾羅技R202，日本艾羅技公司製造)15質量份，而製備丙烯酸樹脂/環氧樹脂為80/20之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於圖10中表示比較例1之底部填充膜之熔融黏度曲線。又，於表1中表示比較例1之底部填充膜之評價結果。底部填充膜之最低熔融黏度為1950Pa．s，最低熔融黏度到達溫度為113℃。又，於123℃~133℃ 之熔融黏度之斜率為4000Pa．s/℃。又，使用底部填充膜製作之構裝體的空隙之評價為○，焊接評價為×。
[比較例2]
調配作為膜形成樹脂之丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)40質量份、環氧樹脂(品名：JER1031S，三菱化學公司製造)40質量份、酸酐(品名：Rikacid HNA-100，新日本理化公司製造)30質量份、作為硬化促進劑之咪唑(品名：U-CAT-5002，三亞普羅公司製造)1質量份、丙烯酸樹脂(品名：OGSOL EA-0200，大阪有機化學公司製造)29質量份、有機過氧化物(品名：Perhexa V，日油公司製造)1質量份、及填料(品名：艾羅技R202，日本艾羅技公司製造)15質量份，而製備丙烯酸樹脂/環氧樹脂為30/70之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度50μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(50μm)/基底剝離PET(50μm))。
於圖10中表示比較例2之底部填充膜的熔融黏度曲線。又，於表1中表示比較例2之底部填充膜之評價結果。底部填充膜之最低熔融黏度為1300Pa．s，最低熔融黏度到達溫度為115℃。又，於125℃~135℃之熔融黏度之斜率為400Pa．s/℃。又，使用底部填充膜製作之構裝體的空隙之評價為×，焊接評價為○。
於如比較例1般熔融黏度之斜率超過3100Pa．s/℃之情形時，可進行無空隙構裝，但以50℃/sec之升溫速度進行熱壓接之第一構裝體、及以150℃/sec之升溫速度進行熱壓接之第二構裝體兩者之焊接產生不良。又，於如比較例2般熔融黏度之斜率未達900Pa．s/℃之情形時，焊接良好，但於以150℃/sec之升溫速度進行熱壓接之第二構裝體內存在空隙。
另一方面，於如實施例1~3般熔融黏度之斜率為900Pa．s/℃以上3100Pa．s/℃以下之情形時，即便於50℃/sec以上且150℃/sec以下之升溫速度之接合條件下，亦可實現無空隙及良好之焊接。

Claims (12)

  1. 一種底部填充材料，係被用於以既定升溫速度自第1溫度升溫至第2溫度之接合條件，該底部填充材料含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，最低熔融黏度為1000Pa．s以上2000Pa．s以下，從較最低熔融黏度到達溫度高10℃之溫度至較該溫度高10℃之溫度的熔融黏度之斜率為900Pa．s/℃以上3100Pa．s/℃以下。
  2. 如申請專利範圍第1項之底部填充材料，其中，該最低熔融黏度到達溫度與該第1溫度大致相同。
  3. 如申請專利範圍第1或2項之底部填充材料，其中，該丙烯酸樹脂與該有機過氧化物之合計質量和該環氧樹脂與該酸酐之合計質量的比為7：3~4：6。
  4. 如申請專利範圍第1或2項之底部填充材料，其中，該環氧樹脂為環氧丙基醚型環氧樹脂，該酸酐為脂環式酸酐。
  5. 如申請專利範圍第3項之底部填充材料，其中，該環氧樹脂為環氧丙基醚型環氧樹脂，該酸酐為脂環式酸酐。
  6. 如申請專利範圍第1或2項之底部填充材料，其中，該丙烯酸樹脂為茀系丙烯酸酯，該有機過氧化物為過氧縮酮。
  7. 如申請專利範圍第3項之底部填充材料，其中，該丙烯酸樹脂為茀系丙烯酸酯，該有機過氧化物為過氧縮酮。
  8. 如申請專利範圍第4項之底部填充材料，其中，該丙烯酸樹脂為茀系丙烯酸酯，該有機過氧化物為過氧縮酮。
  9. 如申請專利範圍第5項之底部填充材料，其中，該丙烯酸樹脂為茀系丙烯酸酯，該有機過氧化物為過氧縮酮。
  10. 一種半導體裝置之製造方法，其具有：搭載步驟：將形成有附焊料電極且於該電極面貼合有底部填充材料之半導體晶片搭載於形成有與該附焊料電極對向之對向電極的電子零件；及熱壓接步驟：將該半導體晶片與該電子零件以既定升溫速度自第1溫度升溫至第2溫度而進行熱壓接，該底部填充材料含有環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，最低熔融黏度為1000Pa．s以上2000Pa．s以下，從較最低熔融黏度到達溫度高10℃之溫度至較該溫度高10℃之溫度的熔融黏度之斜率為900Pa．s/℃以上3100Pa．s/℃以下。
  11. 如申請專利範圍第10項之半導體裝置之製造方法，其中，該第1溫度與該底部填充材料之最低熔融黏度到達溫度大致相同。
  12. 如申請專利範圍第10項之半導體裝置之製造方法，其中，該第1溫度為50℃以上150℃以下，該升溫速度為50℃/sec以上150℃/sec以下。
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