JP6458503B2 - 異方性導電フィルム、その製造方法及び接続構造体 - Google Patents
異方性導電フィルム、その製造方法及び接続構造体 Download PDFInfo
- Publication number
- JP6458503B2 JP6458503B2 JP2015004592A JP2015004592A JP6458503B2 JP 6458503 B2 JP6458503 B2 JP 6458503B2 JP 2015004592 A JP2015004592 A JP 2015004592A JP 2015004592 A JP2015004592 A JP 2015004592A JP 6458503 B2 JP6458503 B2 JP 6458503B2
- Authority
- JP
- Japan
- Prior art keywords
- anisotropic conductive
- conductive film
- metal particles
- flux
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
(A)規則配列された凹部を有する転写型の当該凹部の少なくとも底部にフラックスを配置する工程;
(B)フラックスが配置された凹部に金属粒子を配置する工程; 及び
(C)金属粒子が配置された転写型の凹部側より絶縁フィルムを当接させて加熱加圧して絶縁フィルムに金属粒子を転写する工程;
を有する製造方法を提供する。この製造方法は、好ましくは、更に工程(D)
(D)金属粒子が転写された絶縁フィルムの金属粒子転写面に、別の絶縁フィルムを熱圧着する工程
を有する。
(a)規則配列された凹部を有する転写型の当該凹部に金属粒子を配置する工程;
(b)転写型の金属粒子が配置された凹部形成面にフラックスを配置する工程;
(c)転写型のフラックス配置面側より絶縁フィルムを当接させて加熱加圧して絶縁フィルムに金属粒子を転写する工程;及び
(d)金属粒子が転写された絶縁フィルムの金属粒子転写面に、別の絶縁フィルムを熱圧着する工程
を有する。
以下、本発明の具体例を図面を参照しながら説明する。
本発明の異方性導電フィルムは、以下の工程(A)〜(C)を有する製造方法により製造することができる。
まず、図7A〜図7Cに示すように、規則配列された凹部50を有する転写型100の当該凹部50の少なくとも底部にフラックス3を配置する。具体的には、図7Aに示すように、凹部50の底部だけにフラックス3を配置してよく、図7Bに示すように、凹部50の底部を含む内壁面全体にフラックス3を配置してもよい。また、図7Cに示すように、凹部50の底部と、転写体100の隣接凹部50間の表面とにフラックス3を配置してもよい。図7Cの場合、凹部50の底部の単位面積当たりのフラックス量が、隣接凹部50間の表面の単位面積当たりのフラックス量より大とすることが好ましい。
次に、図8A〜図8Cに示すように、フラックス3が配置された凹部50に金属粒子2を配置する。金属粒子2を配置する手法としては、公知の手法を採用することができる。例えば、転写型の表面に金属粒子を散布し、凹部以外の転写型表面に存在する金属粒子をエアブローやブレードで除去すればよい。また、マイクロディスペンサーにより凹部に金属粒子を一個ずつ供給してもよい。
次に、図9A〜図9Dに示すように、金属粒子2が配置された図8A〜図8Dの転写型100(図8A〜図8D)の凹部50側より絶縁フィルム1を当接させて加熱加圧して絶縁フィルム1に金属粒子2を転写する。この状態で、絶縁フィルム1をロールに巻き締めれば、図9Aの態様からは、図10Aの異方性導電フィルム10が得られ、図9Bの態様からは、図10Bの異方性導電フィルム10が得られ、図9Cの態様からは、図10Cの異方性導電フィルム10が得られ、そして図9Dの態様からは、図10Dの異方性導電フィルム10が得られる。
即ち、金属粒子が転写された絶縁フィルム(図9A〜図9D)の金属粒子転写面に、別の絶縁フィルムを熱圧着することにより、図9Aの態様からは、2層構造の絶縁フィルム1(1aと1b)を有する図11Aの異方性導電フィルム10が得られ、図9Bの態様からは、2層構造の絶縁フィルム1(1aと1b)を有する図11Bの異方性導電フィルム10が得られ、図9Cの態様からは、2層構造の絶縁フィルム1(1aと1b)を有する図11Cの異方性導電フィルム10が得られ、そして図9Dの態様からは、2層構造の絶縁フィルム1(1aと1b)を有する図11Dの異方性導電フィルム10が得られる。
まず、図12Aに示すように、規則配列された凹部50を有する転写型200の当該凹部50に金属粒子2を配置する。
次に、図12Bに示すように、転写型200の金属粒子2が配置された凹部形成面にフラックス3を配置する。
次に、図12Cに示すように、金属粒子2が配置された転写型200の凹部50側より絶縁フィルム1aを当接させて加熱加圧して絶縁フィルム1aにフラックス3と共に金属粒子2を転写する。
次に、図12Dに示すように、金属粒子2が転写された絶縁フィルム1aの金属粒子転写面に、別の絶縁フィルム1bを熱圧着する。これにより、2層構造の絶縁フィルム1(aと1b)の層間にフラックス3が配置された異方性導電フィルム10が得られる。
本発明の異方性導電フィルムは、ICチップ、半導体ウェハ等の第1の電気部品の端子と、配線基板や半道体ウエハ等の第2の電気部品の端子との間に配置され、加熱加圧することにより第1の電気部品と第2の電気部品とが異方性導電接続された接続構造体の製造に有用である。このような接続構造体も本発明の一態様である。
厚さ2mmのニッケルプレートを用意し、四方格子パターンで円柱状の凸部(外径25μm、高さ20μm)を形成し、転写体原盤とした。隣接凸部中心間距離は40μmであった。従って、凸部の密度は625個/mm2であった。
実施例1と同様の転写型を用意し、この転写型に対し、平均粒子径20μmの半田粒子(微粉半田粉、三井金属鉱業(株))を散布した後、エアブロアすることにより凹部に半田粒子を充填した。
フラックスを使用しない以外は、実施例1を繰り返すことにより異方性導電フィルムを得た。
実施例1と同様の転写型を用意し、実施例1と同様に転写型の凹部の底部にフラックスを配した後、その凹部に半田粒子を充填した。この転写型の表面に、再度、スキージを用いてトルエンで5wt%に希釈したフラックス(ESR−250T4、千住金属工業(株))を塗布した。その後、実施例1と同様の操作を繰り返すことにより異方性導電フィルムを得た。フラックスの乾燥後の塗布厚は、ハンダ粒子のフィルム界面側の端部では1μmであり、ハンダ粒子間では1μm未満であった。
実施例1においてトルエンによるフラックス(ESR−250T4、千住金属工業(株))の希釈を5wt%から10wt%に変更し、乾燥後の塗布厚を2μmにした以外は、実施例1を繰り返すことにより異方性導電フィルムを得た。
得られた異方性導電フィルムを用いて、100μm×100μm×15μm(高さ)のサイズの金バンプが形成されたテスト用ICチップを、IC実装用ガラスエポキシ基板(材質:FR4)に、温度180℃、圧力40mPa、加熱加圧時間20秒という条件で異方性導電接続し、接続構造体を得た。得られた接続構造体について、初期導通抵抗値、プレッシャークッカーテスト(PCT)(試験条件:温度121℃、圧力2atmの環境下に200時間放置)後の導通抵抗値、及び高温高湿バイアス試験(試験条件:温度85℃、湿度85%の環境下で50v印可)後の導通抵抗値を測定した。得られた結果を表1に示す。
半田粒子が転写される厚さ20μの絶縁フィルムとして、フェノキシ樹脂(YP−50、新日鉄住金化学(株))60質量部、エポキシ樹脂(jER828、三菱化学(株))40質量部、フュームドシリカ(R200、日本アエロジル(株)10質量部)、及びカチオン系硬化剤(SI−60L、三新化学工業(株))2質量部からなるフィルムを使用すること以外、実施例1の操作を繰り返すことにより、異方性導電フィルムを得た。得られた異方性導電フィルムは、実施例1の異方性導電フィルムと同様に、いずれの評価項目についても良好な結果が得られた。
2 金属粒子
2a、2b 金属粒子の異方性導電フィルム裏面側端部
3 フラックス
10 異方性導電フィルム
50 転写型の凹部
100、200 転写型
Claims (12)
- 絶縁フィルム内に金属粒子を備えた異方性導電フィルムであって、平面視において金属粒子が規則配列されており、金属粒子の異方性導電フィルム表面側端部又は異方性導電フィルム裏面側端部の少なくともいずれか一方の端部にフラックスが接触もしくは近接するように配置されており、金属粒子の表面の一部が、フラックスと接触していない異方性導電フィルム。
- 金属粒子が、半田粒子である請求項1記載の異方性導電フィルム。
- 絶縁フィルムが2層構造となっており、その層間に金属粒子が配置されている請求項1又は2記載の異方性導電フィルム。
- 金属粒子のフラックスと接触していない表面部分が、金属粒子のフラックスと接触している表面部分の反対側に配置されている請求項1〜3のいずれかに記載の異方性導電フィルム。
- 異方性導電フィルムの面方向において、隣接する金属粒子間にフラックスが配置されている請求項1〜4のいずれかに記載の異方性導電フィルム。
- 隣接する金属粒子間に配置されたフラックスが、2層構造の絶縁フィルムの層間に配置されている請求項5記載の異方性導電フィルム。
- 金属粒子の異方性導電フィルム表面側端部又は異方性導電フィルム裏面側端部の少なくともいずれか一方の端部に配置された単位面積当たりのフラックス量が、隣接する金属粒子間に配置された単位面積当たりのフラックス量よりも大である請求項5又は6記載の異方性導電フィルム。
- 請求項1記載の異方性導電フィルムの製造方法であって、以下の工程(A)〜(C):
(A)規則配列された凹部を有する転写型の当該凹部の少なくとも底部にフラックスを配置する工程;
(B)フラックスが配置された凹部に金属粒子を配置する工程; 及び
(C)金属粒子が配置された転写型の凹部側より絶縁フィルムを当接させて加熱加圧して絶縁フィルムに金属粒子を転写する工程;
を有する製造方法。 - 更に、工程(D)
(D)金属粒子が転写された絶縁フィルムの金属粒子転写面に、別の絶縁フィルムを熱圧着する工程
を有する請求項8記載の製造方法。 - 請求項1記載の異方性導電フィルムの製造方法であって、以下の工程(a)〜(d):
(a)規則配列された凹部を有する転写型の当該凹部に金属粒子を配置する工程;
(b)転写型の金属粒子が配置された凹部形成面にフラックスを配置する工程;
(c)転写型のフラックス配置面側より絶縁フィルムを当接させて加熱加圧して絶縁フィルムに金属粒子を転写する工程;及び
(d)金属粒子が転写された絶縁フィルムの金属粒子転写面に、別の絶縁フィルムを熱圧着する工程
を有する製造方法。 - 第1の電気部品の端子と第2の電気部品の端子との間に配置された、請求項1〜7のいずれかに記載の異方性導電フィルムにより、第1の電気部品と第2の電気部品とが異方性導電接続されてなる接続構造体。
- 第1の電気部品の端子と第2の電気部品の端子との間に、請求項1〜7のいずれかに記載の異方性導電フィルムを配置し、加熱加圧することにより第1の電気部品と第2の電気部品とを異方性導電接続する、接続構造体の製造方法。
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