JP2013004738A - 配線基板の製造方法 - Google Patents
配線基板の製造方法 Download PDFInfo
- Publication number
- JP2013004738A JP2013004738A JP2011134312A JP2011134312A JP2013004738A JP 2013004738 A JP2013004738 A JP 2013004738A JP 2011134312 A JP2011134312 A JP 2011134312A JP 2011134312 A JP2011134312 A JP 2011134312A JP 2013004738 A JP2013004738 A JP 2013004738A
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- pad
- bonding
- flux
- solder
- substrate
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Abstract
【解決手段】樹脂基板10の上面にフリップチップ接続用の接続パッド13となる第1パッド13Aと、ボンディングパッド14となる第2パッド14Aとを形成し、第2パッド14Aの表面にめっき14Bを形成し、第1パッド13Aの表面にのみ選択的に粘着層15を被着する。続いて、粘着層15にはんだ粉16を付着し、樹脂基板10の上面全面にハロゲン濃度が0.15wt%以下のフラックス40を塗布し、はんだ粉16をリフローにより溶融して第1パッド13Aにはんだ13Bを被着する。
【選択図】図3
Description
まず、配線基板の製造方法を図1〜図6に従って説明する。
まず、配線基板1の上面に形成された接続パッド13に1段目(下段)の半導体素子51のバンプ51A(例えば、金バンプやはんだバンプ)をフリップチップ接合し、配線基板1と半導体素子51との間にアンダーフィル樹脂52を形成する。半導体素子51の上に2段目(上段)の半導体素子53を接着剤により接着し、半導体素子53の上面に形成された電極パッド53Aと配線基板1の上面に形成されたボンディングパッド14との間をボンディングワイヤ54(例えば、金ワイヤ)によりワイヤボンディング接続する。その後、半導体素子51,53及びボンディングワイヤ54等を封止樹脂55で樹脂封止する。このようにして、配線基板1上に半導体素子51,53が積み重ねて搭載され、1段目の半導体素子51が配線基板1とフリップチップ接続され、2段目の半導体素子53が配線基板1とワイヤボンディング接続された半導体装置2を得ることができる。
ここで、まず、ワイヤボンディングの際におけるボンディングパッド14へのワイヤ不着の発生メカニズムについて考察する。図3(a)に示した工程のように、基板10の上面全面にフラックス40が塗布されると、そのフラックス40を介して接続パッド13となる第1パッド13Aとボンディングパッド14とがつながる。さらに、図12に示すように、これら第1パッド13Aとボンディングパッド14は、基板10中の内部配線(図示略)によって電気的に接続されている。このため、局部電池効果により、フラックス40中にはんだ粉16から錫イオン(Sn2+)が溶出され、ボンディングパッド14のめっき14B(Auめっき)上にSnが析出される。そして、このように析出されたSnによって、ボンディングパッド14の表面が変色し、ワイヤボンディングの際のワイヤ不着などを起こすと考えられる。このことを示す評価結果例を図13に示している。
・試料1:ワイヤボンディングされたボンディングワイヤと十分な接合強度が得られたボンディングパッド
・試料2:ワイヤボンディングの際にワイヤ不着であったボンディングパッドであり、且つ外観上変色していないボンディングパッド
・試料3:ワイヤボンディングの際にワイヤ不着であったボンディングパッドであり、且つ外観上変色しているボンディングパッド
なお、図13(a)は、相対定量結果を示すものであり、図13(b)は、ベース(ここでは、Au)に対する原子数比を示すものである。また、図13(a)中の空欄は、検出限界以下であって定量計算に含まれていないことを示しており、図13(b)中の「0.00」は、検出限界以下であって定量計算に含まれていないことを示している。
以上説明した本実施形態によれば、以下の効果を奏することができる。
(他の実施形態)
なお、上記実施形態は、これを適宜変更した以下の態様にて実施することもできる。
2 半導体装置
10 基板
13 接続パッド
13A 第1パッド
13B はんだ
14 ボンディングパッド
14A 第2パッド
14B めっき
15 粘着層
16 はんだ粉
20 ソルダレジスト層
30 テープ
40 フラックス
Claims (3)
- 第1パッドの表面にはんだが被着されたフリップチップ接続用の接続パッドと、第2パッドの表面にめっきが施されたワイヤボンディング接続用のボンディングパッドとが設けられた配線基板の製造方法において、
基板の第1主面に前記第1パッド及び前記第2パッドを形成する工程と、
前記第2パッドの表面に前記めっきを施す工程と、
前記第1パッドの表面にのみ選択的に粘着層を被着させる工程と、
前記粘着層にはんだ粉を付着させる工程と、
前記基板にフラックスを塗布する工程と、
前記はんだ粉を溶融して前記パッドに前記はんだを被着させる工程と、を有し、
前記フラックスのハロゲン濃度が0.15wt%以下であることを特徴とする配線基板の製造方法。 - 前記フラックスのハロゲン濃度が0.10wt%以上0.15wt%以下であることを特徴とする請求項1に記載の配線基板の製造方法。
- 前記第1パッドの表面にのみ選択的に前記粘着層を被着させる工程では、前記ボンディングパッドを形成した領域にマスク用のテープを粘着して前記ボンディングパッドを遮蔽した後に、前記第1パッドの表面にのみ前記粘着層を被着させることを特徴とする請求項1又は2に記載の配線基板の製造方法。
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US13/494,744 US8580611B2 (en) | 2011-06-16 | 2012-06-12 | Method for manufacturing wiring substrate |
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