TWI412899B - 微影裝置及製造元件之方法 - Google Patents
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Description
本發明係關於微影裝置及製造元件之方法。
微影裝置係將所需圖案施加至基板之目標部分之機器。微影裝置可用於(例如)積體電路(IC)、平板顯示器及其它含有精密結構之元件的製造。在一習知微影裝置中,圖案化構件(或稱為光罩或主光罩)可用於產生與IC(或其它元件)之個別層相對應之電路圖案,並且此圖案可被成像至具有輻射敏感材料層(光阻)之基板(例如,矽晶圓或玻璃板)上之目標部分上(例如包含部分、一或若干晶粒)。該圖案化構件可包含用於產生電路圖案之個別可控元素之陣列,以代替光罩。
通常,單一基板含有被相繼曝光之鄰近目標部分之網路。已知之微影裝置包括所謂的步進器,其中每一目標部分藉由一次性將整個圖案曝光於目標部分上而被輻射,及所謂的掃描器,其中藉由以一給定方向("掃描"方向)穿過投影光束掃描圖案來輻射每一目標部分,同時平行或反平行於此方向同步掃描該基板。
為了使用微影技術製造元件,通常需要由多層形成該元件。當由多層生產此元件時,需要確保當創建每一層時,其與先前層對準。因此已知需在一基板上提供對準標記。在每一層曝光於該基板上之前,其被傳送至對準量測中心,在此處對準標記被定位,以允許相對於對準感測器之基板之位置的精確判定。藉由將該基板以可控方式移動至曝光位置,可應用位置校正以在該基板上之正確位置準確生產隨後層。可使用此系統來確保與臨界形體尺寸相比疊加誤差較小。
然而,隨著臨界形體尺寸繼續減小,要求在疊加精確度(overlay accuracy)上之進一步改良。此外,隨著對準要求增加,定位及檢測對準標記所花的時間增加,減少了裝置的生產能力。
本發明之一目的是提供一種方法及裝置,其中可改良疊加精確度而裝置之生產能力不顯著損失。
根據本發明之一態樣,提供一種微影裝置,其包含:
-用於供給輻射之投影光束之照明系統;
-用於在其橫截面上賦予投影光束一圖案之圖案化構件;
-用於支撐一基板之基板台;
-用於將圖案化光束投影於基板之目標部分上之投影系統;
-當該基板位於使投影系統將該圖案化光束投影於該基板上之位置時,用於檢測該基板之偵測器;及
-用於調整下列參數之至少一個之控制器:投影於基板上之圖案相對於該基板的位置;投影於該基板之圖案的放大率;及回應來自偵測器之資訊的最佳聚焦影像平面;
其中該偵測器具有用於穿過基板之整個寬度同時檢測基板之複數個部分的複數個感測器;並且安置圖案化構件及投影系統以曝光該基板之整個寬度;藉此該基板可一次通過該裝置而被檢測及曝光。
因此,可增加裝置之生產能力,因為該偵測器可藉由在一次通過中相對裝置掃描基板來檢測整個基板、或基板的部分、該整個基板之代表及將所需圖案曝光於該基板上。此在平板顯示器之製造中尤其有益,例如,其中被加工的玻璃基板的尺寸可高達2mx2m或更大。
該裝置亦有益因為可改良基板之每一部分的疊加精確度。此外,因為當該基板在曝光位置時可檢測基板的多個部分,所以基板自對準量測位置至曝光位置移動不會引起誤差。因此覆蓋層最好不僅考慮到在先前加工步驟期間引入基板中之缺陷亦考慮到在該層曝光期間出現的變化。例如,此系統可補償在曝光期間由於用於曝光每一層之輻射加熱該基板所引起之基板的膨脹及收縮。因此,基板之每一部分之疊加精確度被改良。此外,因為該基板不需要被傳送至單獨的對準量測中心,所以基板之加工時間不會顯著增大。
較佳地,藉由檢測該基板之該部分,偵測器可判定基板之該部分的位置及/或定向及/或基板之該部分相對於基板之基準狀態的膨脹/收縮的量。此資訊可用於調整投影於該基板上之圖案的位置、投影於該基板上之圖案的放大率及最佳聚焦影像平面。
偵測器相對於投影系統的位置可實質上被固定並已知,或可提供一位置感測器用於監控偵測器相對於投影系統的位置。因此,基板之一部分相對於該偵測器之位置的知識可容易地及準確地轉化為基板之該部分相對於投影系統之位置的知識。
在一較佳實施例中,在連續曝光之間或隨著連續曝光的進行相對於投影系統及偵測器移動該基板,並且安置該偵測器以使得該偵測器檢測的基板的部分隨後變成基板的被曝光的目標部分。該基板相對於偵測器及投影系統所需移動的距離自偵測器與投影系統的相對位置得知。因此,該偵測器可在基板之給定部分曝光之前不久檢測基板之此部分;及當基板之該部分被曝光時可相應地調整曝光條件以最優化疊加精確度。
該基板可方便地在複數個曝光期間或連續曝光期間相對於投影系統及偵測器以大體上恒定的速度移動。此減少了該基板相對於投影系統及偵測器重複加速的要求,因此減少必須施加之力。因此,藉由改變曝光之時序及/或改變將圖案設定於個別可控元素之陣列上的時序亦可能以與基板相對於投影系統及偵測器之移動相平行的方向調整投影於該基板上之圖案的位置。
藉由實體移動該投影系統、個別可控元素圖案化構件之陣列、該基板或其組合及/或藉由變換生產於個別可控元素之陣列上之圖案的位置來另外或作為替代地調整投影於基板上之圖案的位置。
本發明亦可應用於由被互相分離設置之複數個個別可控元素陣列組成的裝置。在此情況下,控制器可為藉由個別可控元素之陣列生產之一或多個圖案獨立地調整投影於基板之圖案的位置、圖案的放大率及/或最佳聚焦影像平面。此允許對於個別可控元素之個別陣列之間之任何移動的補償並亦允許對於(例如)基板不同區域之間之基板扭曲之變化的補償,在該基板之不同區域上投影有來自個別可控元素之每一陣列之圖案。
為了促進此補償,偵測器可同時檢測基板上之複數個位置之對準標記,每一位置與藉由複數個可程式化圖案化區域同時曝光之基板上之一區域相對應。
根據本發明之另一態樣,提供一種微影裝置,其包含:
-用於供給輻射之投影光束之照明系統;
-用於在其橫截面上賦予投影光束一圖案之圖案化構件;
-用於支撐一基板之基板台;
-用於將圖案化光束投影於基板之目標部分上之投影系統;
-當基板位於使投影系統將圖案化光束投影於該基板上的位置時用於檢測該基板之一部分的偵測器;及
-用於調整下列參數中至少一個的控制器:投影於該基板上之圖案相對於該基板的位置;投影於該基板上之圖案的放大率;及回應來自該偵測器之資訊之最佳聚焦影像平面;
其中該偵測器檢測形成於藉由先前加工步驟生產之基板上之元件的特徵。
因此,因為該偵測器檢測形成於該基板上之元件的特徵,所以需要在基板上形成更少的專用對準標記或完全去除對其之需要。因此更大比例的基板之區域可用於形成於基板上之主動元件。
根據本發明之另一態樣,提供一種微影裝置,其包含:
-用於供給輻射之投影光束之照明系統;
-用於在其橫截面上賦予投影光束一圖案之圖案化構件;
-用於支撐一基板之基板台;及
-用於將圖案化光束投影於該基板之目標部分上之投影系統;
-當該基板位於使投影系統將圖案化光束投影於該基板上之位置時用於檢測該基板之一部分之偵測器;
其中該裝置進一步包含:
-一控制器,其用於調整回應來自該偵測器之資訊投影於該基板上之圖案的放大率。
因此,可調整投影於該基板上之圖案以補償(例如)該基板之區域化熱膨脹。較佳地,控制器可進一步調整投影於基板上之圖案的位置及/或最佳聚焦影像平面。
應瞭解亦可使用上文討論之組態的組合。
根據本發明之另一態樣,提供一種製造元件之方法,其包含:
-提供一基板;
-使用照明系統提供輻射之投影光束;
-使用圖案化構件在其橫截面上賦予投影光束一圖案;
-將輻射之圖案化光束投影於該基板之目標部分上,
-當該基板位於使投影系統將圖案化光束投影於該基板上之位置時使用偵測器來檢測基板之一部分;且
-調整投影於該基板上之圖案相對於該基板的位置、投影於該基板上之圖案的放大率及回應來自該偵測器之資訊之最佳聚焦影像平面中的至少一個;
其中該偵測器具有用於穿過該基板之整個寬度同時檢測基板之複數個部分的複數個感測器;及安置圖案化構件及投影系統以曝光基板之整個寬度;及
該方法進一步包含在基板一次通過裝置中檢測該基板並將圖案曝光於基板上。
根據本發明之另一態樣,提供一種製造元件之方法,其包含:
-提供一基板;
-使用照明系統提供輻射之投影光束;
-使用圖案化構件在其橫截面上賦予投影光束一圖案;
-將輻射之圖案化光束投影於該基板之目標部分上;
-當該基板位於使投影系統將圖案化光束投影於該基板上的位置時使用偵測器檢測該基板之一部分;及
-調整投影於該基板上之圖案相對於該基板的位置、投影於該基板上之圖案的放大率及回應來自該偵測器之資訊之最佳聚焦影像平面中的至少一個;
其中該偵測器檢測形成於藉由先前加工步驟生產之基板上之元件的特徵。
根據本發明之另一態樣,提供一種製造元件之方法,其包含:
-提供一基板;
-使用照明系統提供輻射之投影光束;
-使用圖案化構件在其橫截面上賦予投影光束一圖案;
-將輻射之圖案化光束投影於該基板之目標部分上;
-當該基板位於使投影系統將圖案化光束投影於該基板上的位置時使用偵測器檢測該基板之一部分;及
-調整回應來自該偵測器之資訊投影於該基板上之圖案的放大率。
此處使用的術語"個別可控元素之陣列"應廣泛地解釋為可用於賦予入射光束一圖案化橫截面之任何構件,以使得可在該基板之目標部分中創建所需的圖案;術語"光閥"及"空間光調變器"(SLM)亦可用於本文中。該等圖案化構件之實例包括:
-可程式化鏡面陣列。此可包含具有黏彈控制層之矩陣可定址表面及反射表面。該裝置之基本原理為(例如)反射表面之定址區域將入射光反射為繞射光,而未定址區域將入射光反射為非繞射光。使用適當空間過濾器,該非繞射光可被過濾出反射光束,僅留下繞射光到達該基板;以此方式,根據矩陣可定址表面之定址圖案使該光束圖案化。應瞭解,作為替代,該過濾器可過濾出繞射光,留下非繞射光到達該基板。亦可以相應方式使用繞射光學MEMS元件之陣列。每一繞射光學MEMS元件由複數個反射帶組成,該等反射帶可互相相對變形以形成將入射光反射為繞射光之格柵。可程式化鏡面陣列之另一替代實施例使用微鏡面之矩陣排列,每一微鏡面之矩陣排列可藉由應用適合的區域化電場或藉由使用壓電致動構件而繞軸線個別傾斜。再次,該等鏡面為矩陣可定址,使得定址鏡面將入射光束以一不同方向反射至未定址鏡面;以此方式,根據矩陣可定址鏡面之定址圖案來圖案化該反射光束。使用適合的電子構件可執行所需之矩陣定址。在上文描述之兩種情況中,個別可控元素之陣列可包含一或多個可程式化鏡面陣列。此處參考之關於鏡面陣列之更多的資訊可(例如)自以引用方式併入本文中之美國專利US 5,296,891與US 5,523,193及PCT專利申請案WO 98/38597與WO 98/33096搜集。
-可程式化LCD陣列。該構造之實例在以引用方式併入本文中之美國專利US 5,229,872中給定。
應瞭解(例如)在使用預偏壓特性、光學接近校正特性、相位變化技術及多次曝光技術的地方,"顯示"於個別可控元素之陣列上之圖案實質上與最終傳輸至基板之一層或基板上之一層的圖案不同。同樣地,在基板上最終產生之圖案與任一瞬時在個別可控元素之陣列上形成的圖案不相對應。此為以下排列中之情況,其中基板每一部分上形成的最終圖案經過給定的一段時間或給定數目的曝光而建立,在此期間個別可控元素之陣列上的圖案及/或基板之相對位置改變。
雖然本文中使用具體參考於IC製造中之微影裝置之使用,應瞭解本文中描述之微影裝置可具有其它應用,例如積體光學系統之製造、磁疇記憶體之導引及偵測圖案、平板顯示器、薄膜磁頭等。熟練技術者將瞭解在該等替代應用之背景中,本文中任一使用之術語"晶圓"或"晶粒"被認為分別與更通用之術語"基板"或"目標部分"同義。在曝光之前或之後於(例如)軌道(一種通常將抗蝕劑層施加至基板及將曝光之抗蝕劑顯影的工具)或度量衡或檢測工具中加工本文中引用之基板。若合適,本文之揭示可應用於該基板及其它基板加工工具。另外,可多於一次加工該基板(例如)以創建多層IC,使得本文中使用之術語基板亦用於指已含有多個加工層之基板。
本文中使用之術語"輻射"及"光束"包含所有類型之電磁輻射,包括(例如具有408、355、365、248、193、157或126奈米之波長之)紫外(UV)輻射及(例如具有5-20奈米範圍波長之)極端紫外(EUV)輻射以及例如離子束或電子束之粒子束。
本文中使用的術語"投影系統"應廣泛地解釋為包含各種類型的投影系統,包括折射式光學系統、反射式光學系統及反射折射式光學系統,其適用於(例如)使用之曝光輻射或例如浸洗液之使用或真空之使用的其它因素。本文中術語"透鏡"之任何使用被認為與更通用之術語"投影系統"同義。
照明系統亦可包含各種類型之光學部件,包括用於導向、成形或控制輻射之投影光束之折射式、反射式及反射折射式光學部件,且該等部件在下文亦共同或各自地被稱為"透鏡"。
微影裝置可為具有兩個(雙級)或多個基板台之類型。在該等"多級"機器中,可平行使用額外的台,或在一或多個臺上進行預備步驟同時將一或多個其它台用於曝光。
微影裝置亦可為以下類型,其中基板浸沒於具有相對高折射指數之液體(例如水)中,以使得填充投影系統之最終元件與該基板之間的空間。浸洗液亦可應用於微影裝置中之其它空間,例如,在個別可控元素陣列與投影系統之第一元件之間。浸沒技術在技術中係熟知用於增大投影系統之數值孔徑。
圖1示意地描繪根據本發明之特定實施例之微影投影裝置。該裝置包含:
-一照明系統(照明器)IL,其用於提供輻射(例如UV輻射)之投影光束PB;
-一個別可控元素之陣列PPM(例如可程式化鏡面陣列),其用於將一圖案施加至投影光束;通常該個別可控元素之陣列之位置相對於物品PL固定;然而其亦可被連接至定位構件以相關於物品PL將其準確定位;
-一基板台(例如晶圓臺)WT,其用於支撐基板(例如經抗蝕劑塗佈之晶圓)W,及連接至定位構件PW以相關於物品PL將該基板準確定位;及
-一投影系統("透鏡")PL,其用於將藉由個別可控元素之陣列PPM賦予投影光束PB之圖案成像至基板W之目標部分C(例如包含一或多個晶粒)上;投影系統可將個別可控元素之陣列成像至基板上;或者,投影系統可成像二次光源,對於該二次光源而言個別可控元素之陣列中的元件充當擋板;投影系統亦可包含例如微透鏡陣列(已知為MLA)或費涅(Fresnel)透鏡陣列之聚焦元件陣列(例如)以形成二次光源及將微黑子(microspot)成像至基板上。
如此處描述,該裝置係反射類型(即具有個別可控元素之反射陣列)。然而,一般而言,其亦可為(例如)透射類型(即具有個別可控元素之透射陣列)。
照明器IL自輻射源SO接收輻射光束。該輻射源及該微影裝置可為單獨實體,例如當輻射源為一準分子雷射時。在此情況下,不認為該輻射源形成微影裝置之一部分,並且該輻射光束在包含例如適合的導向鏡面及/或光束擴展器之光束傳送系統BD的幫助下自輻射源SO傳至照明器IL。在其它情況下該輻射源可為裝置之組成部分,例如當該輻射源為汞燈時。輻射源SO及照明器IL連同光束傳送系統BD(若需要)一起被稱為輻射系統。
照明器IL可包含用於調整光束角強度分佈的調整構件AM。通常,至少可調整照明器瞳孔平面中之強度分佈的外部及/或內部徑向範圍(一般分別稱為σ-外部及σ-內部)。此外,照明器IL通常包含各種其它部件,例如積光器IN及聚光器CO。照明器提供經調整之輻射光束,其稱為投影光束PB,在其橫截面中具有所需的均一性及強度分佈。
光束PB隨後照射在個別可控元素之陣列PPM上。在經個別可控元素之陣列PPM反射後,光束PB穿過投影系統PL,其將光束PB聚焦至基板W之目標部分C上。借助於定位構件PW(及干涉量測構件IF),基板台WT可被準確地移動,例如以便在光束PB之路徑中定位不同的目標部分C。在使用時,用於個別可控元素之陣列的定位構件(例如)在掃描期間可用於準確校正個別可控元素陣列PPM相關於光束PB之路徑的位置。通常,物件台WT之移動借助於圖1中未明確描繪之長衝程模組(粗略定位)及短衝程模組(精確定位)來實現,亦可使用類似系統來定位個別可控元素之陣列。應瞭解,當物件台及/或個別可控元素之陣列具有一固定位置時,投影光束作為替代地/額外地為可移動的以提供所需的相對移動。作為另一替代,其在平板顯示器之製造中尤其適用,基板台及投影系統的位置可被固定並且安置該基板以相對於基板台移動。例如,基板台可配置有用於以大體恒定速度掃描穿過其之基板的系統。
雖然根據本發明之微影裝置在本文中被描述為用於將抗蝕劑曝光於基板上,應瞭解本發明非意欲限於此使用並且該裝置可用於在無抗蝕劑微影中投影圖案化投影光束。
描述之裝置可用於四個較佳模式:
1.步進模式:個別可控元素之陣列將整個圖案賦予投影光束,其一次性(即單一靜態曝光)被投影於目標部分C上。接著使基板台WT在X及/或Y方向上移位以使得可曝光不同的目標部分C。在步進模式中,曝光場之最大尺寸限制了在單一靜態曝光中成像的目標部分C的尺寸。
2.掃描模式:個別可控元素之陣列可在一給定方向(所謂的"掃描方向",例如Y方向)以速度v移動,使得引起投影光束PB在個別可控元素之陣列上掃描;同時,基板台WT以同樣或相反的方向以速度V=Mv同時移動,其中M為透鏡PL之放大率。在掃描模式中,曝光場之最大尺寸限制單一動態曝光中之目標部分的寬度(在非掃描方向),而掃描運動的長度決定目標部分的高度(在掃描方向)。
3.脈衝模式:使個別可控元素之陣列大體上保持固定並使用脈衝輻射源將整個圖案投影於基板之目標部分C上。以一大體恒定的速度移動基板台WT使得引起投影光束PB跨越基板W掃描行。將個別可控元素之陣列上的圖案按照需要在輻射系統之脈衝之間更新並將該等脈衝定時以使得在基板上之所需位置曝光連續的目標部分C。因此,投影光束可跨越基板W掃描以曝光基板之一條上的整個圖案。重複該過程直至已將整個基板逐行曝光。
4.連續掃描模式:除使用大體恒定的輻射源並且當投影光束跨越基板掃描並將其曝光時個別可控元素之陣列上的圖案被更新之外大體與脈衝模式相同。
亦可使用關於上文描述的使用模式之組合及/或變體或完全不同的使用模式。
圖2a、2b及2c說明根據本發明之裝置。在固定位置提供曝光及對準模組17且基板10在其下方被掃描。圖2a描繪在基板即將到達曝光及對準模組15之前的情況;圖2b描繪基板在曝光及對準模組下方開始掃描之情況;及圖2c描繪基板在曝光及對準模組15下方繼續掃描之情況。
曝光及對準模組15由偵測器單元16及曝光單元17組成。藉由確保曝光單元17與偵測器單元16之相對位置固定的參考框架18來連接偵測器單元16與曝光單元17。參考框架18由具有非常低之熱膨脹之材料形成以確保相對位置穩定。接著藉由先前校準來準確判定該相對位置。隨著在曝光及對準模組下方掃描基板,偵測器單元16檢測基板10上之對準標記。使用來自檢測對準標記之資訊來準確判定掃描方向中、橫向方向中(即在基板平面內及與掃描方向垂直)及與基板垂直之基板的位置。此外,使用對準標記以確定基板在所有的三個轉動自由度中之定向。偵測器單元16亦檢測對準標記以判定基板之任何熱膨脹/收縮之程度。
隨著基板10在曝光及對準單元15下方掃描,基板之每一部分首先在偵測器單元16下方及接著在曝光單元17下方經過。因此,可將基板10之每一部分之藉由偵測器單元16判定的線性位置、定向及膨脹資訊傳輸至曝光單元17,使得當隨著基板該部分在曝光單元17下方經過而被曝光時最優化其曝光條件。具體言之,可調整投影於基板該部分之圖案的位置來校正在掃描及橫向方向上的基板該部分的位置誤差;可調整最佳聚焦影像平面來校正位於與基板之平面相垂直之方向的基板該部分的位置誤差;及可使用放大率校正來校正基板該部分之任何熱膨脹/收縮。(例如)在用於平板顯示器之製造的裝置中,可將偵測器單元16定位於曝光單元17(自前面基板之圖的點)之前30公分。基板相對於偵測器單元及曝光單元的掃描速度為每秒50毫米。因此,該裝置在使用偵測器單元檢測基板之一部分與用曝光單元照明同一部分之間有6秒。此時間足夠用於按照需要使來自偵測器單元之資料用於調整曝光單元中之曝光設置。
檢測基板之每一部分上之對準標記,允許進行連續校正。因此,即使存在基板之局部變形亦可減少疊加誤差。此外,檢測對準標記及基板與將圖案曝光於基板之該部分上之間的時間差僅受偵測器單元16與曝光單元17之分離及基板的掃描速度所限制。此與目前已知之裝置形成對比,在目前已知之裝置中基板首先整體被掃描用於對準標記且接著整體被掃描以曝光圖案。此導致檢測基板給定部分之對準標記與曝光該部分之間的時間差較大。在此時間期間,導致疊加誤差之額外變形將被引入。例如,隨著基板被曝光,投影至基板上之輻射增大其溫度。此溫度增大導致基板之熱膨脹。在已知系統中,曝光期間之此熱膨脹無法藉由在與曝光相獨立之過程中檢測對準標記而被考慮。然而在本發明中,此膨脹被考慮,因為該等對準標記在曝光發生時被檢測。其對於用於成像高達兩公尺長之鹼石灰玻璃板之平板顯示器微影尤其重要。對於該板,膨脹率大約為8微米/1℃溫度變化。因此,為了在曝光期間提供所需的0.35微米的疊加精確度而不檢測對準標記,基板的溫度需要控制為整個板±0.05℃。此將要求複雜的熱控制。
此外,因為本發明不要求一獨立過程用於檢測基板上之對準標記,所以每一基板之加工時間大大減少。
基板上之對準標記可為:與掃描方向及橫向方向兩者相平行之對準格柵;如使用之人字形對準標記;或藉由TV成像之影像辨識。對準標記之序列以與基板相對於偵測器單元16被掃描之方向相平行之一個或多個列而安置並分佈於基板之整個長度上。較佳地在該基板上提供至少兩個該等對準標記之列。在每一情況下,在偵測器單元16中提供適用於使用之對準標記之已知偵測光學系統。
在一較佳配置中,不在基板上提供專用對準標記。作為替代,偵測器單元配置有可偵測在先前加工步驟中已於基板上形成之特徵圖案的一個或多個感測器。該等感測器可為連接至運行圖案辨識演算法之控制器的相機。此配置係有益的,因為專用的對準標記代表不可用於形成於基板上之元件之特徵的基板的一部分。因此,藉由使用元件自身之特徵,基板之更大部分可用於元件之功能化部件。此尤其適用於(例如)平板顯示器之形成,因為對準標記與所形成之顯示器之像素大約同一尺寸。因此若在顯示器中需要對準標記,則此將導致完成元件中該位置之像素的缺失,此明顯是不可接受的。使用在先前層中形成之特徵的亦係有利的,因為當一新層形成於基板上之元件上時,必須確保其與已形成之元件之先前層正確重疊。藉由直接量測形成於基板上之較早層的特徵位置,操作者可以確保正確覆蓋下一層。如描述,若偵測器單元檢測形成之元件之功能性特徵而不是專用對準標記,則為了當將功能性特徵形成於元件之邊緣時確保對準正確,其有必要圍繞於所形成以包括虛設特徵(即看上去與功能性特徵相似之彼等特徵)之元件的邊緣。
圖6示意地代表平板顯示器之製造期間形成於基板上之特徵圖案之一部分。如圖示,整個圖案由包含控制線41、薄膜電晶體42及像素自身43之複數個重複單元40組成。因此可使用影像辨識系統來識別重複單元並準確量測特徵的位置。最好使用自學影像辨識系統。如注釋,圖案為高度重複的。因此,該影像辨識偵測器可用於基板上之特徵之位置的精量測且單獨系統可用於粗位置量測,因為在基板之不同部分上之重複單元之間不存在可辨識的差異。例如,可在基板上提供標尺,即一系列的標記來表示沿基板長度的位置。該標尺可(例如)僅沿基板之邊緣提供,因為其僅用於形成於基板上之元件之特徵之位置的粗量測。換言之,該標尺不需在基板上要求形成待在基板上形成之元件的零件的位置形成。作為替代或此外,該影像辨識感測器藉由當基板相對於偵測器單元掃描時儲存資訊可執行粗位置量測。例如,偵測器單元可計算形成於已經過偵測器單元掃描之基板上之先前層之圖案的重複單元的數目。因此,此計算資料可用於藉由圖案辨識偵測器判定重複單元之哪一個被隨後識別。
藉由若干構件可移動投影於基板上之圖案的位置。首先,基板10之位置當在曝光及對準單元15下方掃描時可被校正。例如,將基板台安裝於提供掃描運動之長衝程模組上;短衝程模組安裝於長衝程模組與基板台之間以提供校正式移動。或者,為了將圖案投影於基板之正確位置,將曝光及對準單元15或至少曝光單元17(或其一部分)安裝於致動器上以提供校正式移動。另一選擇為電子地移動形成於個別可控元素之陣列上之圖案(即調整提供至個別可控元素之陣列之資料以使得圖案在個別可控元素之陣列上出現移位)。以與掃描方向相平行之方向投影於基板上之圖案的位置亦可藉由當在曝光單元17下方掃描基板時控制圖案曝光之時序或若(例如)裝置用於連續掃描模式中時調整設定於個別可控元素之陣列的圖案時序而被調整。當然,亦可使用上文描述之技術的組合。
圖3描繪與本發明一起使用之曝光單元17之細節。該曝光單元由複數個光引擎21組成,其每一個可產生圖案化輻射光束並將其投影於基板10上。如圖3所示,將光引擎21排列成與基板之掃描方向相垂直的兩個陣列22、23。圖4展示光引擎21之細節。光引擎由個別可控元素之陣列25、投影光學器件26及微透鏡陣列27組成。二或多個光引擎21可共用一個共同輻射源或每一個可配置有獨立的輻射源。應瞭解,雖然如圖示該光引擎使用微透鏡陣列,但是個別可控元素之陣列25可被全部成像於基板10上。
如圖5所示,光引擎21之陣列22、23在基板10上產生圖案影像31之對應陣列32、33。在光引擎21之每一陣列22、23中,在光引擎之間提供空間。此空間用於為光引擎提供例如冷卻之輔助服務或為輻射源提供空間。因此,在投影於基板上之圖案影像31之陣列32、33中存在間隙。安置光引擎之陣列22、23以使得在基板移動一給定距離之後藉由光引擎之第二陣列22投影於基板上的圖案化影像31之第二陣列32與藉由光引擎之第一陣列23投影於基板上的圖案化影像之第一陣列33中之間隙一致。因此,跨越橫向方向之基板之完整條帶可不管光引擎21之間的間隙而被曝光。如圖3及5所示,存在光引擎21之兩個陣列。然而,應瞭解在曝光單元17中可提供額外的陣列以(例如)允許光引擎21之間的更大間隙或允許基板之每一部分在單一掃描中接收多於一次曝光。
在一較佳實施例中,回應於來自偵測器單元16之資訊對投影於基板上之圖案做的每一次調整可藉由每一光引擎獨立地完成。此藉由提供個別致動器以控制每一光引擎21之位置、藉由在投影光學器件26及/或每一光引擎21之微透鏡陣列中提供放大控制及最佳聚焦影像平面控制及/或藉由為每一光引擎提供單獨的資料控制使得可獨立地應用電子校正來達成。藉此,可補償跨越基板之局部扭曲及變形。然而,亦最好能提供全域補償構件(即影響由所有光引擎生產之圖案的補償構件)來補償(例如)一整體基板的位置性誤差。
若未將光引擎安裝於單獨致動器上,則可將所有光引擎之微透鏡陣列安裝於單一的參考框架上,該單一的參考框架較佳具有非常低的熱膨脹。然而,若需要,可調整每一微透鏡陣列相對於該參考框架的位置。同樣地,可將所有光引擎之個別可控元素之陣列安裝於單獨的參考框架上,並可調整每一個別可控元素之陣列相對於該參考框架的位置。因此,可量測及校準藉由光引擎生產之圖案之相對位置。
可藉由改變個別可控元素之陣列的位置以補償基板之任何膨脹/收縮或藉由任何其它適合的光學方法來調整每一光引擎之放大率。作為替代或額外地,可藉由電子地改變應用於個別可控元素之陣列的圖案,來調整投影於基板上之圖案的放大率。如前文所述,可為每一光引擎獨立地執行此操作及/或為所有光引擎整體地執行(例如,藉由調整所有個別可控元素之陣列被安裝於其上之參考框架的位置)。放大率控制範圍較佳為±15ppm。
在上文描述之實施例之變體中,偵測器單元16及曝光單元17未被剛性地互相連接或藉由經受熱膨脹/收縮之框架連接。在此情況下,必須提供位置感測器來監控曝光單元17相對於偵測器單元16的位置。因此該相對位置仍然係已知,即使其不固定。
如圖7所示,偵測器單元16較佳由複數個感測器16a、16b組成,使得可跨越基板之整個寬度檢測基板上之對準標記及/或先前形成層的特徵。因此,當在曝光單元17中設定曝光條件時,可考慮在基板之變形及/或已形成於基板上之特徵的對準中跨越基板寬度的變化。如圖7所示,偵測器單元16中16a、16b中之感測器之安置可以與曝光單元17中之光引擎相對應之安置的方式而被安置。例如,將感測器安置成感測器第一陣列16a及感測器第二陣列16b,每一陣列包含一組間隔分離之感測器。因此,雖然檢測基板10之整個寬度,但是可為控制線、設施等等在每一感測器16a、16b周圍提供間隙。
應瞭解在如上文描述之配置中,排列每一感測器16a、16b以使得其與給定之一個光引擎21相關聯,即隨後使用相關聯之光引擎來曝光由給定感測器檢測之基板的每一部分。亦應瞭解此配置不需限於如圖7所示之兩列感測器但如方便可被組態以具有任何數目的列。此外,安置偵測器單元16以使得其不檢測基板10之每一部分。例如,可跨越偵測器單元16但設定為互相分離來安置感測器之一列。在此情況下,在複數個設定為互相分離的位置安置感測器來量測基板及/或形成於基板上之特徵之位置及/或定向。因此可直接自感測器中之量測為基板上的此等區域設定曝光條件。對於其中未經感測器檢測之區域,藉由自已檢測基板之周圍部分的兩個或多個感測器內插資料來設定曝光條件。
應進一步瞭解,雖然本發明上文已主要關於使用脈衝模式(描述於上文)之裝置描述,其中基板以一大體恒定的速度移動且曝光被脈衝化,應瞭解本發明同樣可應用於運行步進模式之裝置(描述於上文)及運行掃描模式之裝置(描述於上文)。此外,雖然本發明參考使用個別可控元素之陣列來圖案化輻射光束,應瞭解本發明同樣可應用於使用習知固定光罩來圖案化投影光束之裝置。在此情況下,其可(例如)與運行掃描模式之裝置一起使用:偵測器可位於光罩與基板之間且當其跨越基板掃描時被安置於圖案化投影光束之前。最後,雖然本發明按照基板於曝光及對準單元下方移動來描述,應容易地瞭解所描述之絕對位置對於本發明並非關鍵且固定裝置之給定部分亦並非關鍵:僅需要該基板相對於曝光及對準單元移動。
雖然上文已描述本發明之特定實施例,但應瞭解可不同於描述之方式來實踐本發明。該描述非意欲限制本發明。
10...基板
15...曝光及對準模組
16...偵測器單元
16a...感測器
16b...感測器
17...曝光單元
18...參考框架
21...光引擎
22...光引擎之第二陣列
23...光引擎之第一陣列
25...個別可控元素之陣列
26...投影光學器件
27...微透鏡陣列
31...圖案影像
32...圖案影像之第二陣列
33...圖案影像之第一陣列
40...重複單元
41...控制線
42...薄膜電晶體
43...像素自身
現在僅以實例地方式參考附屬示意圖來描述本發明之實施例,在該等附屬示意圖中對應的參考符號表示對應的部分,及其中:
圖1描繪根據本發明之實施例的微影裝置;
圖2a、2b及2c描繪當基板上之一層經受曝光之三個瞬間時的基板;
圖3描繪用於本發明之裝置的曝光單元之排列;
圖4描繪圖3中所示之曝光單元的一部分;
圖5描繪藉由圖3中所示之曝光學系統產生的曝光場;
圖6描繪形成於基板上之特徵之重複單元排列之實例;及
圖7描繪用於本發明之裝置之偵測器單元的排列。
在該等圖中,對應的參考符號表示對應的部分。
10...基板
15...曝光及對準模組
16...偵測器單元
17...曝光單元
18...參考框架
Claims (16)
- 一種微影裝置,其包含:(i)一投影系統,其經組態以將一輻射束投影於一基板上;(ii)一對準偵測器,其經組態以檢測該基板上之一或多個圖案化特徵;及(iii)一基板台,其經組態以支撐該基板,並使該基板相對於該投影系統與該對準偵測器而移動;其中該對準偵測器經進一步組態以當該基板移動且該基板之一整個寬度之一部分曝露於該輻射束之前,檢測該基板實質上之該整個寬度。
- 如請求項1之微影裝置,其中該對準偵測器具有複數個感測器,其經組態以實質上同時檢測該基板之該整個寬度。
- 如請求項1之微影裝置,其另包含一控制器,其經組態以基於該檢測來調整曝光條件。
- 如請求項1之微影裝置,其中該裝置經組態以利用一個別可控元素之陣列來提供一圖案化光束。
- 如請求項4之微影裝置,其中該裝置包含複數個個別可控元素之陣列。
- 如請求項1之微影裝置,其中該對準偵測器經進一步組態以檢測該基板上之一或多個圖案化特徵且同時該對準偵測器保持固定。
- 一種元件製造方法,其包含: 相對於一投影系統與一對準偵測器來移動一基板;使用該對準偵測器來檢測該基板上之一或多個圖案化特徵,其中該檢測之步驟係橫跨實質上該基板之一整個寬度而進行(occur);及當依據檢測來調整一或多個曝光條件時,使用該投影系統曝光該基板之該整個寬度之一部分。
- 如請求項7之方法,其中該檢測與該曝光之步驟係在移動該基板時發生。
- 如請求項7之方法,其中相對於該投影系統與該對準偵測器移動該基板之該步驟係發生於接續的數次曝光之間。
- 如請求項7之方法,其中相對於該投影系統與該對準偵測器移動該基板之該步驟係發生於連續之曝光期間。
- 請求項7之方法,其中該基板之該整個寬度之被檢測之一部分隨後變為該基板被曝光之該部分。
- 如請求項7之方法,其中該曝光條件被調整以最佳化疊加精確度。
- 如請求項7之方法,其中該基板相對於該投影系統與該對準偵測器以一實質上恆定之速率來移動。
- 如請求項7之方法,其中該對準偵測器相對於該投影系統之位置實質上固定且已知。
- 如請求項7之方法,其另包含在曝光期間監測該對準偵測器相對於該投影系統之位置。
- 如請求項7之方法,其中該檢測之步驟進一步包含檢測 該基板上之一或多個圖案化特徵且同時該對準偵測器保持固定。
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EP (1) | EP1482373A1 (zh) |
JP (6) | JP2004363590A (zh) |
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KR20060100322A (ko) | 2006-09-20 |
JP2014082517A (ja) | 2014-05-08 |
JP2004363590A (ja) | 2004-12-24 |
JP2012015503A (ja) | 2012-01-19 |
JP2009088542A (ja) | 2009-04-23 |
US20090284720A1 (en) | 2009-11-19 |
US7385675B2 (en) | 2008-06-10 |
JP5068364B2 (ja) | 2012-11-07 |
KR20040103423A (ko) | 2004-12-08 |
JP2011077540A (ja) | 2011-04-14 |
US20080218718A1 (en) | 2008-09-11 |
SG148015A1 (en) | 2008-12-31 |
JP2012212898A (ja) | 2012-11-01 |
US20130201466A1 (en) | 2013-08-08 |
US20050007572A1 (en) | 2005-01-13 |
CN100407054C (zh) | 2008-07-30 |
KR100767090B1 (ko) | 2007-10-15 |
TW201005448A (en) | 2010-02-01 |
JP5524278B2 (ja) | 2014-06-18 |
JP5068242B2 (ja) | 2012-11-07 |
US8395755B2 (en) | 2013-03-12 |
EP1482373A1 (en) | 2004-12-01 |
CN1573576A (zh) | 2005-02-02 |
JP5698831B2 (ja) | 2015-04-08 |
JP5037714B2 (ja) | 2012-10-03 |
KR100760036B1 (ko) | 2007-10-04 |
US8675175B2 (en) | 2014-03-18 |
US7576834B2 (en) | 2009-08-18 |
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