13.20136 九、發明說明： 【發明所屬之技術領域】 本發明係關於微影裝置及製造元件之方法。 【先前技術】 微影裝置係將所需圖案施加至基板之目標部分之機器。 微影裝置可用於（例如）積體電路（IC)、平板顯示器及其它含 有精密結構之元件的製造。在一習知微影裝置中，圖案化 構件（或稱為光罩或主光罩）可用於產生與ic(或其它元件） 之個别層相對應之電路圖案，並且此圖案可被成像至具有 輻射敏感材料層（光阻）之基板（例如，矽晶圓或玻璃板）上之 目標部分上（例如包含部分、—或若干晶粒）。該圖案化構件 可包含用於產生電路圖案之個別可控元素之陣歹，卜以代替 光罩。 通常，單一基板含有被相繼曝光之鄰近目標部分之網 路。已知之微影裝置包括所謂的步進器，#中每一目標部 分藉由一次性將整個圖案曝光於目標部分上而被輻射，及 所謂的掃描器’其中藉由以一給定方向（"掃描"方向）穿過投 影光束掃描圖案來輻射每一目標部分，同時平行或反平行 於此方向同步掃描該基板。 為了使用微影技術製造元件，通常需要由多層形成該元 件。當由多層生產此7〇件時，需要確保當創建每一層時， 其與先前層對準。因此已知需在—基板上提供對準標記。 在每一層曝光於該基板上之前，其被傳送至對準量測中 心，在此處對準標記被定位，以允許相對於對準感測器之 93577.doc 13.2〇136 基板之位置的精確判定。藉由將該基板以可控方式移動至 曝光位置’可應用位置校正以在該基板上之正確位置準確 生產隨後層。可使用此系統來確保與臨界形體尺寸相比叠 加誤差較小。 然而，隨著臨界形體尺寸繼續減小，要求在疊加精確度 (overlay accuracy)上之進一步改良》此外，隨著對準要求 增加，疋位及檢測對準標§己所化的時間增加，減少了裝置 的生產能力。 【發明内容】 本發明之一目的是提供一種方法及裝置，其中可改良疊 加精確度而裝置之生產能力不顯著損失。 根據本發明之一態樣，提供一種微影裝置，其包含： -用於供給輻射之投影光束之照明系統； ••用於在其橫截面上賦予投影光束一圖案之圖案化構件； -用於支撐一基板之基板台； -闬於將圖案化光束投影於基板之目標部分上之投影系 統； -當該基板位於使投影系統將該圖案化光束投影於該基板 上之位置時，用於檢測該基板之偵測器；及 -用於調整下列參數之至少一個之控制器：投影於基板上 之圖案相對於該基板的位置；投影於該基板之圖案的放大 率；及回應來自偵測器之資訊的最佳聚焦影像平面； 其中該偵測器具有用於穿過基板之整個寬度同時檢測基板 之複數個部分的複數個感測器；並且安置圖案化構件及投 93577.doc 1320136 影系統以曝光該基板之整個寬度；藉此該基板可一次通過 該裝置而被檢測及曝光。 因此，可增加裝置之生產能力，因為該偵測器可藉由在 一次通過中相對裝置掃描基板來檢測整個基板、或基板的 部分、該整個基板之代表及將所需圖案曝光於該基板上。 此在平板顯示器之製造117尤其有益，例如，其中被加工的 玻璃基板的尺寸可高達2mx2m或更大》 該裝置亦有益因為可改良基板之每一部分的疊加精確 度。此外’因為當該基板在曝光位置時可檢測基板的多個 部分’所以基板自對準量測位置至曝光位置移動不會引起 誤差。因此覆蓋層最好不僅考慮到在先前加工步驟期間引 入基板中之缺陷亦考慮到在該層曝光期間出現的變化。例 如，此系統可補償在曝光期間由於用於曝光每一層之輻射 加熱該基板所引起之基板的膨脹及收縮。因此，基板之每 一部分之疊加精確度被改良。此外，因為該基板不需要被 傳送至單獨的對準量測中心，所以基板之加工時間不會顯 著增大。 較佳地’藉由檢測該基板之該部分，偵測器可判定基板 之該部分的位置及/或定向及/或基板之該部分相對於基板 之基準狀態的膨脹/收縮的量。此資訊可用於調整投影於該 基板上之圖案的位置、投影於該基板上之圖案的放大率及 敢佳聚焦影像平面。 侦測器相對於投影系統的位置可實質上被固定並已知， 或可提供一位置感測器用於監控偵測器相對於投影系統的 93577.doc 1320136 位置。因此，基板之一部分相對於該偵測器之位置的知識 可容易地及準確地轉化為基板之該部分相對於投影系統之 位置的知識。 在一較佳實施例中’在連續曝光之間或隨著連續曝光的 進行相對於投影系統及偵測器移動該基板，並且安置該偵 測器以使得該偵測器檢測的基板的部分隨後變成基板的被 曝光的目標部分。該基板相對於偵測器及投影系統所需移 動的距離自偵測器與投影系統的相對位置得知。因此，該 领測器可在基板之給定部分曝光之前不久檢測基板之此部 分；及當基板之該部分被曝光時可相應地調整曝光條件以 最優化疊加精碟度》 該基板可方便地在複數個曝光期間或連續曝光期間相對 於投影系統及偵測器以大體上恒定的速度移動。此減少了 該基板相對於投影系統及偵測器重複加速的要求，因此減 少必須施加之力。因此，藉由改變曝光之時序及/或改變將 圖案設定於個別可控元素之陣列上的時序亦可能以與基板 相對於投影系統及偵測器之移動相平行的方向調整投影於 該基板上之圖案的位置。 藉由實體移動該投影系統、個別可控元素圖案化構件之 陣列'該基板或其組合及/或藉由變換生產於個別可控元素 之陣列上之圖案的位置來另外或作為替代地調整投影於基 板上之圖案的位置。 本發明亦可應用於由被互相分離設置之複數個個別可控 元素陣列組成的裝置。在此情況下，控制器可為藉由個別 93577.doc 1320136 全去除對其之需要。因此更大比例的基板之區域可用於形 成於基板上之主動元件。 根據本發明之另一態樣，提供一種微影裝置，其包含： -用於供給輻射之投影光束之照明系統； -用於在其橫截面上賦予投影光束一圖案之圖案化構件； -用於支撐一基板之基板台；及 -用於將圖案化光束投影於該基板之目標部分上之投影系 統； -當該基板位於使投影系統將圖案化光束投影於該基板上 之位置時用於檢測該基板之一部分之偵測器； 其中該裝置進·—步包含： -一控制器’其用於調整回應來自該偵測器之資訊投影於 該基板上之圖案的放大率。 因此’可調整投影於該基板上之圖案以補償（例如）該基 板之區域化熱膨脹。較佳地，控制器可進一步調整投影於 基板上之圖案的位置及/或最佳聚焦影像平面。 應瞭解亦可使用上文討論之組態的組合。 根據本發明之另一態樣’提供一種製造元件之方法，其 包含： -提供一基板； •使用照明系統提供輻射之投影光束； -使用圖案化構件在其橫截面上賦予投影光束一圖案； -將輻射之圖案化光束投影於該基板之目標部分上， -當該基板位於使投影系統將圖案化光束投影於該基板上 93577.doc 1320136 -提供一基板； -使用照明系統提供輻射之投影光束； •使用圖案化構件在其橫截面上賦予投影光束一圖案； -將輻射之圖案化光束投影於該基板之目標部分上； -當該基板位於使投影系統將圖案化光束投影於該基板上 的位置時使用偵測器檢測該基板之一部分；及 _調整回應來自該偵測器之資訊投影於該基板上之圖案的 放大率。 此處使用的術語”個別可控元素之陣列"應廣泛地解釋為 可用於賦予入射光束一圖案化橫截面之任何構件，以使得 可在該基板之目標部分中創建所需的圖案；術語"光閥"及 空間光調變器"（SLM)亦可用於本文中。該等圖案化構件之 實例包括： -可程式化鏡面陣列》此可包含具有黏彈控制層之矩陣可 定址表面及反射表面》該裝置之基本原理為（例如）反射表面 之定址區域將入射光反射為繞射光，而未定址區域將入射 光反射為非繞射光。使用適當空間過濾器，該非繞射光可 被過濾出反射光束，僅留下繞射光到達該基板；以此方式， 根據矩陣可定址表面之定址圖案使該光束圖案化。應瞭 解，作為替代，該過濾器可過濾出繞射光，留下非繞射光 到達該基板。亦可以相應方式使用繞射光學MEMS元件之 陣列。每一繞射光學MEMS元件由複數個反射帶組成，該 等反射帶可互相相對變形以形成將入射光反射為繞射光之 格柵。可程式化鏡面陣列之另一替代實施例使用微鏡面之 93577.doc •13· 1320136 矩陣排列，每一微鏡面之矩陣排列可藉由應用適合的區域 化電場或藉由使用壓電致動構件而繞軸線個別傾斜。再 次，該等鏡面為矩陣可定址，使得定址鏡面將入射光束以 不π方向反射至未定址鏡面；以此方式，根據矩陣可定 址鏡面之定址圖案來圖案化該反射光束。使用適合的電子 構件可執行所需之矩陣定址。在上文描述之兩種情況中， 個別可控元素之陣列可包含一或多個可程式化鏡面陣列。 此處參考之關於鏡面陣列之更多的資訊可（例如）自以引用 方式併入本文中之美國專利1^ 5,296,891與115 5,523，193及 PCT專利申請案WO 98/38597與WO 98/33096搜集。 •可程式化LCD陣列》該構造之實例在以引用方式併入本 文中之美國專利US 5,229,872中給定。 應瞭解（例如）在使用預偏壓特性、光學接近校正特性、 相位變化技術及多次曝光技術的地方，"顯示"於個別可控 元素之陣列上之圖案實質上與最終傳輸至基板之一層或基 板上之一層的圖案不同。同樣地，在基板上最終產生之圖 案與任一瞬時在個別可控元素之陣列上形成的圖案不相對 應。此為以下排列中之情況，其中基板每一部分上形成的 最終圖案經過給定的一段時間或給定數目的曝光而建立， 在此期間個別可控元素之陣列上的圖案及/或基板之相對 位置改變》 雖然本文中使用具體參考於1C製造中之微影裝置之使 用’應瞭解本文中描述之微影裝置可具有其它應用，例如 積體光學系統之製造、磁疇記憶體之導引及偵測圖案、平 93577.doc •14· 1320136 板顯示器、薄膜磁頭等。熟練技術者將瞭解在該等替代應 用之背景中’本文中任一使用之術語"晶圓"或"晶粒"被認為 分別與更通用之術語”基板"或"目標部分"同義。在曝光之前 或之後於（例如）轨道（一種通常將抗蝕劑層施加至基板及將 曝光之抗蝕劑顯影的工具）或度量衡或檢測工具中加工本 文中引用之基板。若合適，本文之揭示可應用於該基板及 其匕基板加工工具。另外，可多於一次加工該基板（例如） 以創建多層ic ’使得本文中使用之術語基板亦用於指已含 有多個加工層之基板。 本文中使用之術語"輕射"及"光束"包含所有類型之電磁 輻射，包括（例如具有 408、3 55、365、248、193、157或 126 奈求之波長之）紫外（UV)輻射及（例如具有5-20奈米範圍波 長之）極紫外（EUV)轄射以及例如離子束或電子束之粒子 束。 本文中使用的術語”投影系統"應廣泛地解釋為包含各種 類型的投影系統，包括折射式光學系統、反射式光學系統 及反射折射式光學系統，其適用於（例如）使用之曝光輻射或 例如浸洗液之使用或真空之使用的其它因素。本文中術語 "透鏡"之任何使用被認為與更通用之術語"投影系統”同義。 照明系統亦可包含各種類型之光學部件，包括用於導 向、成形或控制輻射之投影光束之折射式、反射式及反射 折射式光學部件，且該等部件在下文亦共同或各自地被稱 為"透鏡"。 微影裝置可為具有兩個（雙級）或多個基板台之類型。在 93577.doc -15· 1320136 該等"多級"機器令’可平行使用額外的台，或在一或多個 里上進行預備纟驟同時將一或多個其它台用於曝光。 微影裝置亦可為以τ類型，其中基板浸沒於具有相對高 折射指數之液體（例如水）中，以使得填充投影系统之最終元 件與該基板之間的空間。浸洗液亦可應用於微影裝置中之 其它空間’例如’在個別可控元素陣列與投影系統之第_ 疋件之間。浸沒技術在技術中係熟知用於增大投影系統之 數值孔徑。 【實施方式】 圖1示意地描繪根據本發明之特定實施例之微影投影裝 置。該裝置包含： -一照明系統（照明器）IL，其用於提供輻射（例如υν輻射） 之投影光束ΡΒ ; -一個別可控元素之陣列ρρΜ(例如可程式化鏡面陣列），其 用於將一圖案施加至投影光束；通常該個別可控元素之陣 列之位置相對於物品PL固定；然而其亦可被連接至定位構 件以相關於物品PL將其準確定位； -一基板台（例如晶圓臺）WT，其用於支撐基板（例如經抗蝕 劑塗佈之晶圓）W，及連接至定位構件Pw以相關於物品pL 將該基板準確定位；及 •一投影系統（”透鏡”）PL，其用於將藉由個別可控元素之陣 列PPM賦予投影光束pb之圖案成像至基板w之目標部分 C(例如包含一或多個晶粒）上；投影系統可將個別可控元素 之陣列成像至基板上；或者，投影系統可成像二次光源， 93577.doc -16· 1320136 對於該二次光源而言個別可控元素之陣列中的元件充當擋 板，投影系統亦可包含例如微透鏡陣列（已知為MLA)或費 涅（Fresnel)透鏡陣列之聚焦元件陣列（例如）以形成二次光 源及將微黑子（microspot)成像至基板上。 如此處描述，該裝置係反射類型（即具有個別可控元素之 反射陣列）。然而，一般而言，其亦可為（例如）透射類型（即 具有個別可控元素之透射陣列）。 照明器IL自輻射源SO接收輕射光束。該輻射源及該微影 裝置可為單獨實體，例如當輻射源為一準分子雷射時。在 此情況下，不認為該輻射源形成微影裝置之一部分，並且 該輻射光束在包含例如適合的導向鏡面及/或光束擴展器 之光束傳送系統BD的幫助下自輻射源s〇傳至照明器IL。在 其它情況下該輻射源可為裝置之組成部分，例如當該輻射 源為汞燈時。輻射源SO及照明器江連同光束傳送系統bd (右需要）一起被稱為輻射系.統。 照明器IL可包含用於調整光束角強度分佈的調整構件 AM。通常’至少可調整照明器曈孔平面中之強度分佈的外 部及/或内部徑向範圍（一般分別稱為（7_外部及σ_内部）。 此外’照明器IL通常包含各種其它部件，例如積光器概 聚光器C0。·照曰月器提供經調整之輻射光纟，其稱為投影光 束ΡΒ，在其橫截面中具有所需的均一性及強度分佈。 光束ΡΒ隨後照射在個別可控元素之陣列ρρΜ上。在經個 別可控兀素之陣列PPM反射後，光束ρΒ穿過投影系統pL , 其將光束PB聚焦至基板w之目標部分(：上◊借助於定位構件 93577.doc -17- 1320136 pW(及干涉量測構件if)，基板台WT可被準確地移動，例如 以便在光束PB之路徑中定位不同的目標部分C。在使用 時’用於個別可控元素之陣列的定位構件（例如）在掃描期間 可用於準確校正個別可控元素陣列PPM相關於光束pb之路 輕的位置。通常’物件台WT之移動借助於圖1中未明確描 繪之長衝程模組（粗略定位）及短衝程模組（精確定位）來實 現亦可使用類似系統來定位個別可控元素之陣列。應瞭 解，當物件台及/或個別可控元素之陣列具有一固定位置 時’投影光束作為替代地/額外地為可移動的以提供所需的 相對移動。作為另一替代，其在平板顯示器之製造中尤其 適用，基板台及投影系統的位置可被固定並且安置該基板 以相對於基板台移動。例如，基板台可配置有用於以大體 恒定速度掃描穿過其之基板的系統。 雖然根據本發明之微影裝置在本文中被描述為用於將抗 蝕劑曝光於基板上，應瞭解本發明非意欲限於此使用並且 該裝置可用於在無抗蝕劑微影中投影圖案化投影光束。 描述之裝置可用於四個較佳模式： 1·步進模式：個別可控元素之陣列將整個圖案賦予投影光 束其次性（即單一靜態曝光）被投影於目標部分^接 著使基板台资在X及/或丫方向上移位以使得可曝光不同的 目標部分C。在步進模式中’曝光場之最大尺寸限制了在單 一靜態曝光中成像的目標部分C的尺寸。 2·掃描模式：個別可控元素之陣列可在'给定方 "掃描方向"，例如γ方向） 丰 月. 如万⑴以速度V移動，使得弓丨起投影光束 93577.doc 1320136 PB在個料控元素之陣列上掃描；同時，基板台^以同樣 或相反的方向錢度V==Mv同時移動，其帽為透鏡凡之 放大率。在掃為模式中，冑光場之最大尺寸限制單一動態 曝光中之目標部分的寬度(在非掃描方向)，而掃描運動的長 度決定目標部分的高度（在掃描方向）。 3.脈衝模式··使個別可控元素之陣列大體上保持固定並使 用脈衝輻射源將整個圖案投影於基板之目標部分^上。以一 大體恒定的速度移動基板台w丁使得引起投影光束pB跨越 基板W掃描行。將個別可控元素之陣列上的圖案按照需要 在輻射系統之脈衝之間更新並將該等脈衝定時以使得在基 板上之所需位置曝光連續的目標部分C。因此，投影光束可 跨越基板W掃描以曝光基板之一條上的整個圖案。重複該 過私直至已將整個基板逐行曝光β 4_連續掃描模式：除使用大體恒定的輻射源並且當投影光 束跨越基板掃描並將其曝光時個別可控元素之陣列上的圖 案被更新之外大體與脈衝模式相同。 亦可使用關於上文描述的使用模式之組合及/或變體或 元全不同的使用模式。 圖2a、2b及2c說明根據本發明之裝置。在固定位置提供 爆光及對準模組17且基板1〇在其下方被掃描。圖2a描繪在 基板即將到達曝光及對準模組15之前的情況；圖21)描繪基 板在曝光及對準模組下方開始掃描之情況；及圖2c描繪基 板在曝光及對準模組15下方繼續掃描之情況。 曝光及對準模組15由偵測器單元16及曝光單元17組成》 93577.doc -19- 1320136 藉由確保曝光單元！ 7與偵測器單元j 6之相對位置固定的參 考框架18來連接偵測器單元16與曝光單元〗7。參考框架u 由具有非常低之熱膨脹之材料形成以確保相對位置穩定。 接著藉由先前校準來準確判定該相對位置。隨著在曝光及 對準模組下方掃描基板，偵測器單元〗6檢測基板1 〇上之對 準標記》使用來自檢測對準標記之資訊來準確判定掃描方 向中、橫向方向中（即在基板平面内及與掃描方向垂直）及與 基板垂直之基板的位置。此外，使用對準標記以確定基板 在所有的三個轉動自由度中之定向。偵測器單元16亦檢測 對準標記以判定基板之任何熱膨脹/收縮之程度。 隨著基板10在曝光及對準單元15下方掃描，基板之每一 部分首先在偵測器單元16下方及接著在曝光單元17下方經 過。因此，可將基板10之每一部分之藉由偵測器單元16判 定的線性位置、定向及膨脹資訊傳輸至曝光單元17，使得 當隨著基板該部分在曝光單元17下方經過而被曝光時最優 化其曝光條件。具體言之，可調整投影於基板該部分之圖 案的位置來校正在掃描&橫向方向i的基扳該部分的位置 誤差；可調整最佳聚焦影像平面來校正位於與基板之平面 相垂直之方向的基板該冑分的位置誤I;及可使用放大率 校正來校正基板該部分之任何熱膨脹/收縮。（例如）在用於 平板顯不器之製造的裝置中，可將偵測器單元16定位於曝 光單元17(自前面基板之圖的點）之前3〇公分。基板相對於偵 測器單元及曝光單元的掃描速度為每秒5〇毫米。因此，該 裝置在使用偵測器單元檢測基板之一部分與用曝光單元照 93577.doc •20· 1320136 明同一部分之間有6秒。此時間足夠用於按照需要使來自偵 測器單元之資料用於調整曝光單元中之曝光設置。 檢測基板之每一部分上之對準標記’允許進行連續校 正。因此，即使存在基板之局部變形亦可減少疊加誤差。 此外，檢測對準標記及基板與將圖案曝光於基板之該部分 上之間的時間差僅受偵測器單元16與曝光單元17之分離及 基板的掃描速度所限制.此與目前已知之裝置形成對比， 在目A已知之裝置中基板首先整體被掃描用於對準標記且 接著整體« —曝光㈣。此導致㈣基板給定部分之 對準標記與曝光該部分之間的時間差較大。在此時間期 間，導致疊加誤差之額外變形將被引入。例如，隨著基板 被曝光，投影至基板上之輻射增大其溫度。此溫度增大導 致，板之熱膨脹。纟已知系統中，曝光期間之此熱膨服無 法藉由在與曝光相獨立之過程中檢測對準標記而被考慮。 然而在本發明中’此膨脹被考慮，因為該等對準標記在曝 光發生時被檢測。其對於用於成像高達兩公尺長之鹼石灰 玻璃板之平板顯示器微影尤其重#。對於該&，膨服率大 約為8微来mC溫度變化。因此，為了在曝光期間提供所需 的0.35微米的疊加精確度1^檢賴準標記，基板的溫度 需要控制為整個板±0.05〇c。㈣要求複雜的熱控制。又 此外，因為本發明不要求一獨立過程用於檢測基板上之 對準標記，所以每一基板之加工時間大大減少。 基板上之對準標記可為：與掃描方向及橫向方向兩者相 平行之對準格栅；如使用之人字形對準標記；或藉由TV成 93577.doc -21， 1320136 致動器上以提供校正式移動。另-選擇為電子地移動形成 於個別可控元素之陣列上之圖案（即調整提供至個別可控 7C素之陣列之資料以使得圖案在個別可控元素之陣列上出 現移位>。以與掃描方向相平行之方向投影於基板上之圖案 的位置亦可藉由當在曝光單元17下方掃描基板時控制圖案 曝光之時序或若（例如）裝置用於連續掃描模式中時調整設 疋於個別可控元素之陣列的圖案時序而被調整。當然，亦 了使用上文描述之技術的組合。 圖3描繪與本發明一起使用之曝光單元17之細節β該曝光 單元由複數個光引擎21組成，其每一個可產生圖案化轄射 光束並將其投影於基板1 〇上。如圖3所示，將光引擎21排列 成與基板之掃描方向相垂直的兩個陣列22、23«圖4展示光 引擎21之細節。光引擎由個別可控元素之陣列2 5、投影光 學器件26及微透鏡陣列27組成。二或多個光引擎21可共用 一個共同輻射源或每一個可配置有獨立的輻射源。應瞭 解’雖然如圖示該光引擎使用微透鏡陣列，但是個別可控 元素之陣列25可被全部成像於基板10上。 如圖5所示，光引擎21之陣列22、23在基板10上產生圖案 影像31之對應陣列32、33。在光引擎21之每一陣列22、23 中’在光引擎之間提供空間。此空間用於為光引擎提供例 如冷卻之輔助服務或為輻射源提供空間。因此，在投影於 基板上之圖案影像3 1之陣列32、33中存在間隙。安置光引 擎之陣列22、23以使得在基板移動一給定距離之後藉由光 引擎之第二陣列22投影於基板上的圖案化影像3 1之第二陣 93577.doc •24· 1320136 列32與藉由光引擎之第一陣列23投影於基板上的圖案化影 像之第一陣列33中之間隙一致。因此，跨越橫向方向之基 板之完整條帶可不管光引擎21之間的間隙而被曝光。如圖3 及5所示’存在光引擎21之兩個陣列。然而，應瞭解在曝光 單元17中可提供額外的陣列以（例如）允許光引擎21之間的 更大間隙或允許基板之每一部分在單一掃描中接收多於一 次曝光。 在一較佳實施例中，回應於來自偵測器單元16之資訊對 技〜於基板上之圖案做的每一次調整可藉由每一光引擎獨 立地完成。此藉由提供個別致動器以控制每一光引擎21之 位置、藉由在投影光學器件26及/或每一光引擎21之微透鏡 陣歹丨中提供放大控制及最佳聚焦影像平面控制及/或藉由 為每一光引擎提供單獨的資料控制使得可獨立地應用電子 杈正來達成。藉此，可補償跨越基板之局部扭曲及變形。 然而，亦最好能提供全域補償構件（即影響由所有光引擎生 產之圖案的補償構件）來補償（例如）—整體基板的位置性誤 差。 右未將光引擎安裝於單獨致動器上，則可將所有光引擎 之微透鏡陣列安裝於單—的參考框架上，該單—的參考框 架較佳具有非常低的熱膨脹 '然而，要，可調整每一 微透鏡陣列㈣於財考框“位置q樣地，可將所有 光引擎之個別可控元素之陣列安裝於單獨的參考框架上， 亚可調玉母-個別可控％素之陣列相對於該參考框架的位 置。因此，可量測及校準藉由光弓（擎生產之圖案之相對位 93577.doc •25. 1320136 僅需要該基板 非關鍵且固定裝置之給定部分亦並非關鍵 相對於曝光及對準單元移動。 雖然上文已描述本發明之特定實施Μ，但應瞭解可不同 於描述之方式來實踐本發明。該描述非意欲限制本發明° 【圖式簡單說明】 χ 現在僅以實例地方式參考附屬示意圖來描述本發明之實 施例，在料附屬*+對應的參考符號表*對應 分，及其中： ^ ° 圖1描繪根據本發明之實施例的微影裝置； 圖2a、2b及2c描繪當基板上之一層經受曝光之三個瞬間 時的基板； 胃 圖3描繪用於本發明之裝置的曝光單元之排列； 圖4描繪圖3中所示之曝光單元的一部分； 圖5描繪藉由圖3中所示之曝光學系統產生的曝光場； 圖6描繪形成於基板上之零件之重複單元排列之實例；及 圖7描繪用於本發明之裝置之偵測器單元的排列。 在該等圖中’對應的參考符號表示對應的部分。 【主要元件符號說明】 10 基板 15 曝光及對準模組 16 偵測器單元 16a感測器 16b感測器 17 曝光單元 93577.doc -28- 1320136 18 參考框架 21 光引擎 22 光引擎之第二陣列 23 光引擎之第一陣列 25 個別可控元素之陣列 26 投影光學器件 27 微透鏡陣列 31 圖案影像 32 圖案影像之第二陣列 33 圖案影像之第一陣列 40 重複單元 41 控制線 42 薄膜電晶體 43 像素自身 93577.doc -29·13.20136 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a lithography apparatus and a method of fabricating the same. [Prior Art] A lithography apparatus is a machine that applies a desired pattern to a target portion of a substrate. The lithography apparatus can be used, for example, in the fabrication of integrated circuits (ICs), flat panel displays, and other components having precision structures. In a conventional lithography apparatus, a patterned member (also referred to as a reticle or main reticle) can be used to create a circuit pattern corresponding to individual layers of ic (or other components), and this pattern can be imaged to On a target portion (eg, containing a portion, or a plurality of grains) on a substrate (eg, a germanium wafer or a glass plate) having a layer of radiation-sensitive material (photoresist). The patterned member may comprise a matrix of individual controllable elements for creating a circuit pattern in place of the mask. Typically, a single substrate contains a network of adjacent target portions that are successively exposed. The known lithography apparatus includes a so-called stepper, in which each target portion is irradiated by exposing the entire pattern to the target portion at a time, and a so-called scanner 'with a given direction (" The scan "direction) illuminates each target portion through the projected beam scanning pattern while simultaneously scanning the substrate in parallel or anti-parallel in this direction. In order to fabricate components using lithography, it is often necessary to form the component from multiple layers. When producing these 7 pieces from multiple layers, it is necessary to ensure that when each layer is created, it is aligned with the previous layer. It is therefore known to provide alignment marks on the substrate. Before each layer is exposed on the substrate, it is transferred to an alignment measurement center where the alignment marks are positioned to allow precise positioning of the substrate relative to the alignment sensor 93537.doc 13.2〇136 determination. Position correction can be applied by controlling the substrate in a controlled manner to an exposure position to accurately produce a subsequent layer at the correct location on the substrate. This system can be used to ensure that the overlay error is small compared to the critical body size. However, as the critical body size continues to decrease, further improvements in overlay accuracy are required. In addition, as the alignment requirements increase, the time for clamping and detection alignment increases, reducing The production capacity of the device. SUMMARY OF THE INVENTION It is an object of the present invention to provide a method and apparatus in which the accuracy of the overlay can be improved without significant loss of throughput of the apparatus. According to an aspect of the present invention, there is provided a lithography apparatus comprising: - an illumination system for supplying a projection beam of radiation; - a patterning member for imparting a pattern of a projection beam in a cross section thereof; a substrate stage for supporting a substrate; - a projection system for projecting a patterned beam onto a target portion of the substrate; - when the substrate is located at a position where the projection system projects the patterned beam onto the substrate, a detector for detecting the substrate; and - a controller for adjusting at least one of the following parameters: a position of the pattern projected on the substrate relative to the substrate; a magnification of a pattern projected on the substrate; and a response from the detection The best focus image plane of the information; wherein the detector has a plurality of sensors for detecting a plurality of portions of the substrate through the entire width of the substrate; and arranging the patterned member and projecting the 93777.doc 1320136 shadow system The entire width of the substrate is exposed; whereby the substrate can be detected and exposed by the device at one time. Therefore, the productivity of the device can be increased because the detector can detect the entire substrate, or a portion of the substrate, a representative of the entire substrate, and expose a desired pattern onto the substrate by scanning the substrate in a single pass. . This is particularly advantageous in the manufacture of flat panel displays 117, for example, where the size of the processed glass substrate can be as high as 2 mx2 m or greater. This device is also advantageous because the overlay accuracy of each portion of the substrate can be improved. Further, since the plurality of portions of the substrate can be detected when the substrate is in the exposure position, the substrate self-alignment measurement position to the exposure position does not cause an error. The cover layer therefore preferably takes into account not only the defects introduced into the substrate during the previous processing steps but also the variations that occur during exposure of the layer. For example, the system compensates for the expansion and contraction of the substrate caused by the heating of the substrate during exposure to expose the radiation of each layer. Therefore, the stacking accuracy of each portion of the substrate is improved. In addition, since the substrate does not need to be transferred to a separate alignment measurement center, the processing time of the substrate does not increase significantly. Preferably, by detecting the portion of the substrate, the detector can determine the position and/or orientation of the portion of the substrate and/or the amount of expansion/contraction of the portion of the substrate relative to the reference state of the substrate. This information can be used to adjust the position of the pattern projected onto the substrate, the magnification of the pattern projected onto the substrate, and the daring of the focused image plane. The position of the detector relative to the projection system can be substantially fixed and known, or a position sensor can be provided for monitoring the position of the detector relative to the projection system 93577.doc 1320136. Thus, knowledge of the position of a portion of the substrate relative to the detector can be readily and accurately translated into knowledge of the position of the portion of the substrate relative to the projection system. In a preferred embodiment 'moving the substrate relative to the projection system and the detector during successive exposures or as the continuous exposure progresses, and placing the detector such that the portion of the substrate detected by the detector subsequently It becomes the exposed target portion of the substrate. The distance that the substrate is required to move relative to the detector and projection system is known from the relative position of the detector and the projection system. Therefore, the detector can detect the portion of the substrate shortly before exposure of a given portion of the substrate; and when the portion of the substrate is exposed, the exposure conditions can be adjusted accordingly to optimize the superposition of the fine disc. The substrate can be conveniently Movement at a substantially constant speed relative to the projection system and the detector during a plurality of exposures or successive exposures. This reduces the need for the substrate to be repeatedly accelerated relative to the projection system and the detector, thus reducing the amount of force that must be applied. Therefore, by changing the timing of the exposure and/or changing the timing of setting the pattern on the array of individually controllable elements, it is also possible to adjust the projection onto the substrate in a direction parallel to the movement of the substrate relative to the projection system and the detector. The location of the pattern. Adjusting the projection additionally or alternatively by physically moving the projection system, the array of individual controllable element patterning members 'the substrate or a combination thereof, and/or by transforming the position of the pattern produced on the array of individually controllable elements The position of the pattern on the substrate. The invention is also applicable to devices consisting of a plurality of individually controllable element arrays arranged separately from one another. In this case, the controller can be fully removed by individual 93577.doc 1320136. Thus a greater proportion of the area of the substrate can be used for the active components formed on the substrate. According to another aspect of the present invention, there is provided a lithography apparatus comprising: - an illumination system for supplying a projection beam of radiation; - a patterned member for imparting a pattern of a projection beam in a cross section thereof; a substrate stage for supporting a substrate; and - a projection system for projecting the patterned beam onto the target portion of the substrate; - when the substrate is located at a position where the projection system projects the patterned beam onto the substrate Detecting a detector of a portion of the substrate; wherein the device comprises: - a controller for adjusting a magnification of a pattern projected onto the substrate in response to information from the detector. Thus, the pattern projected onto the substrate can be adjusted to compensate for, for example, the regionalized thermal expansion of the substrate. Preferably, the controller can further adjust the position of the pattern projected onto the substrate and/or the best focus image plane. It should be understood that a combination of the configurations discussed above can also be used. According to another aspect of the present invention, there is provided a method of fabricating an element comprising: - providing a substrate; - providing a projected beam of radiation using an illumination system; - applying a pattern of projected beams in a cross section thereof using the patterned member; Projecting a patterned beam of radiation onto a target portion of the substrate, - when the substrate is positioned such that the projection system projects a patterned beam onto the substrate 93077.doc 1320136 - providing a substrate; - providing a projection of radiation using an illumination system Beam; • using a patterned member to impart a pattern of projected beams in its cross-section; - projecting a patterned beam of radiation onto a target portion of the substrate; - when the substrate is positioned such that the projection system projects a patterned beam onto the substrate The upper position uses a detector to detect a portion of the substrate; and _ adjusts the magnification of the pattern projected onto the substrate in response to information from the detector. The term "array of individually controllable elements" as used herein shall be broadly interpreted to mean any member that can be used to impart a patterned cross section to the incident beam such that a desired pattern can be created in the target portion of the substrate; "Light Valve" and Spatial Light Modulator" (SLM) can also be used herein. Examples of such patterned components include: - Programmable Mirror Array This can include a matrix with a viscoelastic control layer. Addressing Surfaces and Reflecting Surfaces The basic principle of the device is that, for example, the addressed area of the reflective surface reflects incident light as diffracted light, while the unaddressed area reflects incident light as non-diffracted light. Using a suitable spatial filter, the non-diffracted light The reflected beam can be filtered out leaving only the diffracted light to the substrate; in this manner, the beam is patterned according to the addressing pattern of the matrix addressable surface. It should be understood that the filter can filter out the diffracted light, leaving The lower non-diffracted light reaches the substrate. An array of diffractive optical MEMS elements can also be used in a corresponding manner. Each diffractive optical MEMS element is composed of a plurality of reflections In composition, the reflective strips are deformable relative to each other to form a grid that reflects incident light into diffracted light. Another alternative embodiment of the programmable mirror array uses a micro-mirror 93575.doc • 13· 1320136 matrix arrangement, each The matrix arrangement of the micro-mirrors can be individually tilted about the axis by applying a suitable regionalized electric field or by using piezoelectric actuating members. Again, the mirrors are addressable in a matrix such that the addressed mirror reflects the incident beam in a non-π direction To the unaddressed mirror; in this manner, the reflected beam is patterned according to the addressing pattern of the matrix addressable mirror. The desired matrix addressing can be performed using suitable electronic components. In each of the two cases described above, individually controllable The array of elements may comprise one or more programmable mirror arrays. Further information on the mirror arrays may be referred to, for example, in U.S. Patents 1 5,296,891 and 115 5,523,193, which are incorporated herein by reference. And PCT Patent Application WO 98/38597 and WO 98/33096. • Programmable LCD Arrays. Examples of such configurations are incorporated herein by reference. It is given in US Patent No. 5,229,872. It should be understood, for example, where pre-biasing characteristics, optical proximity correction characteristics, phase change techniques, and multiple exposure techniques are used, "display" on an array of individually controllable elements The pattern is substantially different from the pattern ultimately transmitted to one of the layers of the substrate or one of the layers on the substrate. Likewise, the pattern ultimately produced on the substrate does not correspond to any pattern that is instantaneously formed on the array of individually controllable elements. In the case of the arrangement in which the final pattern formed on each portion of the substrate is established over a given period of time or a given number of exposures during which the relative position of the pattern and/or substrate on the array of individually controllable elements changes. Although the use of lithography devices in the manufacture of 1C is used herein, it should be understood that the lithography apparatus described herein may have other applications, such as the fabrication of integrated optical systems, the guidance and detection of magnetic domain memories. Pattern, flat 93577.doc • 14· 1320136 board display, thin film head, etc. Skilled artisans will appreciate that in the context of such alternative applications, the term "wafer" or "die" used in any of the terms herein is considered to be in a more general term with the term "substrate" or "target". Partially synonymous. The substrate referenced herein is processed before or after exposure, for example, in a track, a tool that typically applies a layer of resist to the substrate and develops the exposed resist, or a metrology or inspection tool. If appropriate, the disclosure herein can be applied to the substrate and its tantalum substrate processing tool. Additionally, the substrate can be processed more than once (for example) to create a multilayer ic ' such that the term substrate as used herein is also used to mean that it already contains multiple The substrate of the processing layer. The terms "light shot" and "beam" used herein include all types of electromagnetic radiation, including (for example, having 408, 3 55, 365, 248, 193, 157 or 126 Ultraviolet (UV) radiation of wavelengths and (eg, having a wavelength in the range of 5-20 nm) extreme ultraviolet (EUV) ray and particle beams such as ion beams or electron beams. Terms used herein. "Projection system" should be broadly interpreted to encompass various types of projection systems, including refractive optical systems, reflective optical systems, and catadioptric optical systems, which are suitable, for example, for exposure radiation or, for example, immersion liquids. Other factors of use or use of vacuum. Any use of the term "lens" herein is considered synonymous with the more general term "projection system." Illumination systems may also include various types of optical components, including refraction of projection beams used to direct, shape, or control radiation. , reflective and catadioptric optical components, and these components are collectively or individually referred to below as "lenses". The lithography device can be of the type having two (two stages) or multiple substrate stages. In 93587.doc -15· 1320136 these "multi-level"machine orders' can be used in parallel with additional stations, or in one or more preparatory steps while using one or more other stations for exposure The lithography apparatus may also be of the τ type in which the substrate is immersed in a liquid having a relatively high refractive index (for example, water) so as to fill the space between the final element of the projection system and the substrate. The immersion liquid can also be applied. Other spaces in the lithography apparatus are, for example, between the individual controllable element arrays and the first element of the projection system. Immersion techniques are well known in the art for increasing the value of the projection system. [Embodiment] Figure 1 schematically depicts a lithographic projection apparatus in accordance with a particular embodiment of the present invention. The apparatus comprises: - an illumination system (illuminator) IL for providing projection of radiation (e.g., υν radiation) a beam ΡΒ; an array of other controllable elements ρρΜ (eg, a programmable mirror array) for applying a pattern to the projected beam; typically the position of the array of individually controllable elements is fixed relative to the article PL; It can also be connected to a positioning member to accurately position it in relation to the article PL; a substrate table (e.g., wafer table) WT for supporting a substrate (e.g., a resist coated wafer), and a connection The positioning member Pw accurately positions the substrate in relation to the article pL; and a projection system ("lens") PL for imaging the pattern of the projection beam pb by the array PPM of the individual controllable elements to the substrate w The target portion C (for example comprising one or more dies); the projection system can image an array of individually controllable elements onto the substrate; or the projection system can image the secondary light source, 93577.doc -16 1320136 For the secondary light source, the elements in the array of individually controllable elements act as baffles, and the projection system may also comprise an array of focusing elements such as a microlens array (known as MLA) or a Fresnel lens array (eg Forming a secondary light source and imaging a microspot onto the substrate. As described herein, the device is of the reflective type (ie, a reflective array with individually controllable elements). However, in general, it can also be ( For example) a transmission type (ie a transmission array with individually controllable elements). The illuminator IL receives a light beam from the radiation source SO. The radiation source and the lithography device can be separate entities, for example when the radiation source is a quasi-molecular ray Shooting time. In this case, the radiation source is not considered to form part of the lithography device, and the radiation beam is transmitted from the radiation source to the illumination with the aid of a beam delivery system BD comprising, for example, a suitable guiding mirror and/or beam expander. IL. In other cases the source of radiation may be an integral part of the device, such as when the source of radiation is a mercury lamp. The radiation source SO and the illuminator river together with the beam delivery system bd (right need) are referred to as the radiation system. The illuminator IL may comprise an adjustment member AM for adjusting the beam angular intensity distribution. Generally, at least the outer and/or inner radial extent of the intensity distribution in the pupil plane of the illuminator can be adjusted (generally referred to as (7_external and σ_internal, respectively). Furthermore, the 'illuminator IL usually contains various other components, for example The concentrator concentrator C0. The illuminator provides an adjusted radiant diaphragm, called the projection beam ΡΒ, which has the desired uniformity and intensity distribution in its cross section. The array of controllable elements is ρρΜ. After being reflected by the array of individual controllable elements PPM, the beam pΒ passes through the projection system pL, which focuses the beam PB to the target portion of the substrate w (the upper jaw is by means of the positioning member 93577. Doc -17- 1320136 pW (and interference measuring component if), the substrate table WT can be accurately moved, for example to locate different target portions C in the path of the beam PB. For use in individual controllable elements The positioning members of the array, for example, can be used to accurately correct the position of the individual controllable element array PPM relative to the beam pb during scanning. Typically the movement of the object table WT is by means of a long stroke not explicitly depicted in Figure 1. Modules (rough positioning) and short-stroke modules (precise positioning) can also be used to locate arrays of individually controllable elements using similar systems. It should be understood that when the object table and/or the array of individually controllable elements have a fixed position The projection beam is alternatively/additionally movable to provide the required relative movement. As a further alternative, it is particularly useful in the manufacture of flat panel displays where the position of the substrate table and projection system can be fixed and placed The substrate is moved relative to the substrate stage. For example, the substrate stage can be configured with a system for scanning a substrate therethrough at a substantially constant speed. Although the lithography apparatus according to the present invention is described herein as being used to expose a resist On the substrate, it will be appreciated that the invention is not intended to be limited to this use and that the device can be used to project a patterned projection beam in a resist-free lithography. The device described can be used in four preferred modes: 1. Stepping mode: individual The array of controllable elements gives the entire pattern to the projection beam. Secondly (ie, a single static exposure) is projected onto the target portion. Shifting in the X and/or 丫 direction so that different target portions C can be exposed. The maximum size of the exposure field in the step mode limits the size of the target portion C imaged in a single static exposure. : The array of individual controllable elements can be in the 'given side' direction of the scanning direction ", for example, the gamma direction) Fengyue. As the 10,000 (1) moves at the speed V, the bow picks up the projection beam 93357.doc 1320136 PB in a material control Scanning on the array of elements; at the same time, the substrate table ^ moves in the same or opposite direction with the degree of V==Mv, and the cap is the magnification of the lens. In the sweep mode, the maximum size of the pupil field limits the single dynamic The width of the target portion in the exposure (in the non-scanning direction), and the length of the scanning motion determines the height of the target portion (in the scanning direction). 3. Pulse Mode • The array of individually controllable elements is held substantially fixed and the entire pattern is projected onto the target portion of the substrate using a pulsed radiation source. Moving the substrate stage at a substantially constant velocity causes the projection beam pB to scan across the substrate W. The pattern on the array of individually controllable elements is updated between pulses of the radiation system as needed and the pulses are timed such that a continuous target portion C is exposed at a desired location on the substrate. Thus, the projected beam can be scanned across the substrate W to expose the entire pattern on one of the strips of the substrate. The smuggling is repeated until the entire substrate has been exposed line by line β 4_continuous scanning mode: in addition to using a substantially constant radiation source and the pattern on the array of individual controllable elements is updated as the projected beam is scanned across the substrate and exposed The outer body is the same as the pulse mode. Combinations and/or variants or variations in usage patterns described above may also be used. Figures 2a, 2b and 2c illustrate a device according to the invention. The exposure and alignment module 17 is provided at a fixed position and the substrate 1 is scanned underneath. 2a depicts the situation before the substrate is about to reach the exposure and alignment module 15; FIG. 21) depicts the substrate starting scanning under the exposure and alignment module; and FIG. 2c depicts the substrate below the exposure and alignment module 15. Continue scanning. The exposure and alignment module 15 is composed of the detector unit 16 and the exposure unit 17" 93577.doc -19- 1320136 by ensuring the exposure unit! 7 A reference frame 18 having a fixed relative position to the detector unit j 6 is connected to the detector unit 16 and the exposure unit 7. The reference frame u is formed of a material having a very low thermal expansion to ensure relative positional stability. The relative position is then accurately determined by previous calibration. As the substrate is scanned under the exposure and alignment module, the detector unit 6 detects the alignment mark on the substrate 1 using information from the detection alignment mark to accurately determine the scanning direction in the lateral direction (ie, in The position of the substrate in the plane of the substrate and perpendicular to the scanning direction and perpendicular to the substrate. In addition, alignment marks are used to determine the orientation of the substrate in all three rotational degrees of freedom. The detector unit 16 also detects alignment marks to determine the extent of any thermal expansion/contraction of the substrate. As the substrate 10 is scanned under the exposure and alignment unit 15, each portion of the substrate is first passed under the detector unit 16 and then under the exposure unit 17. Therefore, the linear position, orientation and expansion information determined by the detector unit 16 of each portion of the substrate 10 can be transmitted to the exposure unit 17 so that the portion is exposed when the portion of the substrate is exposed under the exposure unit 17 Optimize its exposure conditions. Specifically, the position of the pattern projected on the portion of the substrate can be adjusted to correct the position error of the portion in the scanning & lateral direction i; the optimal focus image plane can be adjusted to correct the orientation perpendicular to the plane of the substrate The position of the substrate in the direction is incorrectly I; and the magnification correction can be used to correct any thermal expansion/contraction of the portion of the substrate. For example, in a device for the manufacture of a flat panel display, the detector unit 16 can be positioned 3 cm before the exposure unit 17 (from the point of the front substrate). The scanning speed of the substrate relative to the detector unit and the exposure unit is 5 mm per second. Therefore, the device has 6 seconds between the detection of a portion of the substrate using the detector unit and the same portion of the exposure unit illumination 93577.doc • 20· 1320136. This time is sufficient for the data from the detector unit to be used to adjust the exposure settings in the exposure unit as needed. Detecting the alignment marks on each portion of the substrate allows for continuous calibration. Therefore, even if there is local deformation of the substrate, the superposition error can be reduced. In addition, the time difference between detecting the alignment mark and the substrate and exposing the pattern to the portion of the substrate is limited only by the separation of the detector unit 16 from the exposure unit 17 and the scanning speed of the substrate. This is formed with currently known devices. In contrast, in the device known from item A, the substrate is first scanned as a whole for the alignment mark and then as a whole «exposure (4). This results in a large time difference between the alignment mark of a given portion of the substrate and the exposure of the portion. During this time, additional distortions that cause stacking errors will be introduced. For example, as the substrate is exposed, the radiation projected onto the substrate increases its temperature. This increase in temperature causes the plate to expand thermally. In known systems, this thermal expansion during exposure cannot be considered by detecting alignment marks during the process independent of exposure. However, in the present invention, this expansion is considered because the alignment marks are detected when exposure occurs. It is especially important for flat panel display lithography for imaging soda lime glass sheets up to two meters long. For this &, the rate of expansion is about 8 micrometers mC temperature change. Therefore, in order to provide the required overlay accuracy of 0.35 micrometers during exposure, the temperature of the substrate needs to be controlled to ±0.05 〇c for the entire panel. (d) requires complex thermal control. Moreover, since the present invention does not require an independent process for detecting alignment marks on the substrate, the processing time per substrate is greatly reduced. The alignment mark on the substrate may be: an alignment grid parallel to both the scanning direction and the lateral direction; if the chevron alignment mark is used; or by the TV to 93575.doc -21, 1320136 actuator To provide a corrective movement. Further - selecting to electronically move the pattern formed on the array of individually controllable elements (ie, adjusting the information provided to the array of individually controllable 7C elements such that the pattern appears shifted across the array of individually controllable elements > The position of the pattern projected on the substrate in a direction parallel to the scanning direction can also be adjusted by controlling the timing of pattern exposure when the substrate is scanned under the exposure unit 17, or if, for example, the device is used in the continuous scanning mode. The pattern timing of the array of individual controllable elements is adjusted. Of course, a combination of the techniques described above is also used. Figure 3 depicts the detail of the exposure unit 17 used with the present invention. The exposure unit is comprised of a plurality of light engines 21 Compositions, each of which can produce a patterned ray beam and project it onto the substrate 1. As shown in Figure 3, the light engine 21 is arranged in two arrays 22, 23 «there is perpendicular to the scanning direction of the substrate 4 shows the details of the light engine 21. The light engine is composed of an array of individual controllable elements, projection optics 26 and microlens array 27. Two or more light engines 21 can share a common The sources may each be configurable with an independent source of radiation. It should be understood that although the light engine uses a microlens array as illustrated, an array 25 of individual controllable elements may be entirely imaged on the substrate 10. As shown in FIG. The arrays 22, 23 of light engines 21 produce corresponding arrays 32, 33 of pattern images 31 on the substrate 10. "Each arrays 22, 23 of the light engine 21 provide space between the light engines. This space is used for The light engine provides an auxiliary service such as cooling or provides space for the radiation source. Thus, there is a gap in the arrays 32, 33 of the pattern image 3 1 projected onto the substrate. The arrays 22, 23 of light engines are placed such that the substrate moves one A second array of 93077.doc • 24· 1320136 columns 32 of patterned image 3 projected onto the substrate by a second array 22 of light engines after a given distance is projected onto the substrate by the first array 23 of light engines The gaps in the first array 33 of patterned images are uniform. Therefore, the complete strip of the substrate across the lateral direction can be exposed regardless of the gap between the light engines 21. As shown in Figures 3 and 5, the light engine 21 is present. Two arrays However, it will be appreciated that additional arrays may be provided in the exposure unit 17 to, for example, allow for greater clearance between the light engines 21 or allow each portion of the substrate to receive more than one exposure in a single scan. Each adjustment in response to the information from the detector unit 16 to the pattern on the substrate can be done independently by each light engine. This is controlled by providing individual actuators to control each light engine. 21 position, by providing magnification control and optimal focus image plane control in the projection optics 26 and/or the microlens array of each light engine 21 and/or by providing separate data for each light engine Control allows the electrons to be applied independently, thereby compensating for local distortion and deformation across the substrate. However, it is also desirable to provide a global compensation component (i.e., a compensating member that affects the pattern produced by all of the light engines) to compensate for, for example, the positional error of the overall substrate. If the light engine is not mounted on a separate actuator, the microlens array of all light engines can be mounted on a single-reference frame, which preferably has a very low thermal expansion. However, Each microlens array can be adjusted (4) in the financial test box "position q sample, the array of individual controllable elements of all light engines can be installed on a separate reference frame, sub-adjustable jade - individual controllable The position of the array relative to the reference frame. Therefore, it can be measured and calibrated by the light bow (the relative position of the pattern produced by the engine is 93577.doc • 25.1320136. Only the substrate is not critical and the given part of the fixture is not The present invention has been described with respect to the specific embodiments of the present invention. It is to be understood that the invention may be practiced otherwise than as described. The description is not intended to limit the invention.实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施The lithography apparatus of the embodiment; Figures 2a, 2b and 2c depict the substrate when three layers on the substrate are subjected to exposure; the stomach Figure 3 depicts the arrangement of the exposure unit for the apparatus of the present invention; Part of the exposure unit shown in Figure 3; Figure 5 depicts an exposure field produced by the exposure system shown in Figure 3; Figure 6 depicts an example of a repeating unit arrangement of parts formed on a substrate; and Figure 7 depicts Arrangement of detector units in the device of the present invention. In the figures, 'corresponding reference numerals indicate corresponding parts. [Major component symbol description] 10 substrate 15 exposure and alignment module 16 detector unit 16a sense Detector 16b sensor 17 exposure unit 93377.doc -28- 1320136 18 reference frame 21 light engine 22 second array of light engines 23 first array of light engines 25 array of individually controllable elements 26 projection optics 27 microlenses Array 31 pattern image 32 second array of pattern images 33 first array of pattern images 40 repeating unit 41 control line 42 thin film transistor 43 pixel itself 93577.doc -29·