TWI276700B - Atomic layer deposition of nanolaminate film - Google Patents

Atomic layer deposition of nanolaminate film Download PDF

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Publication number
TWI276700B
TWI276700B TW093104977A TW93104977A TWI276700B TW I276700 B TWI276700 B TW I276700B TW 093104977 A TW093104977 A TW 093104977A TW 93104977 A TW93104977 A TW 93104977A TW I276700 B TWI276700 B TW I276700B
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Taiwan
Prior art keywords
metal
precursor
nitrate
containing precursor
oxide
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TW093104977A
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English (en)
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TW200424348A (en
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Jr John F Conley
Yoshi Ono
Rajendra Solanki
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Sharp Kk
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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description

1276700 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於一種可藉使用含金屬硝酸鹽前驅物做爲 另一含金屬前驅物之氧化劑以使金屬氧化物奈米疊層膜沉 積的原子層沉積法（ALD )。本發明可用於多個應用中， 包括電光學構件、光學塗膜、及冶金和生物醫學應用之鈍 化塗膜。特定言之，本發明係關於積體電路之製造，更特 定而言’本發明係關於半導體電晶體之閘極介電質以及記 憶體電路之電容器介電質。 【先前技術】 在積體電路中，半導體裝置內之介電物質有場效應電 晶體（FET )之閘極介電質，及動態存取記憶體（DRAM )之電容器介電質。這些介電質的尺度規格乃直接和半導 體裝置之性能有關。爲了達成更快速的回應及更複雜的功 能’目則積體電路之生產在所有方向、側邊尺寸及厚度上 是愈來愈短小。 動態存取記憶體（D R A Μ )裝置之性能係和存儲在電 容器內的電荷相關聯，其乃和面積、介電常數k成正比， 並與厚度成反比。當其尺寸減小時，爲了使高性能dram 裝置能維持足夠的電容量電荷，所以就需高度要求電容器 介電質具有高k介電質。 在施加電壓後，半導體裝置之速度是和場效應電晶體 (F E T )內之閘極介電質的回應成正比。而閘極介電質之 1276700 (2) 回應則和其介電常數k成正比，並與厚度t成反比。因此 ，對閘極介電質而言，薄且高k値之介電質就有著高度需 求。 閘極介電質之初原料係帶有介電常數約4之二氧化石夕 (S i Ο 2 )。當裝置之尺度規格持繪地按比例縮小時，二氧 化砂閘極介電質的厚度也就會到達1 . 5 - 2 n m的隧穿限度。 通常，小於1 .5nm之二氧化矽膜是不能用做爲FET裝置 內的閘極介電質，主要原因是直接隧穿電流的高滲漏會導 致過度的電力消耗。對此一相當薄的二氧化矽膜來說，也 會有其他製造及可靠度的利害關係，例如硼滲透、及電荷 射入傷害。 目前已硏究出很多高常數之介電質材料（高k介電質 )，以做爲二氧化矽的可能替代物，但由於許多其他的嚴 格要求如低滲漏電流、與矽基材形成良好的介面、製造程 序中低熱量預算、及裝置中高通道流動性，所以尙未發現 合適之替代。具潛力之候選物質包括二氧化鈦（Ti〇2 )、 氧化鉅（Tas Ο5，具有k値在9與2 7之間）、氧化鋁（ A12 Ο 3，k値約9 )、氧化鉻（Z r 0 2，具有k値在1 0與2 5 之間）、二氧化飴（H f Ο 2，具有k値在1 〇與2 5之間）、 以及各種的組合物和混合物，如多層膜、多組份層、及奈 米疊層膜。 對閘極介電質應用中之高k介電物質而言，目前最具 領先的候選者是氧化銷和二氧化鈴。這些物質的整體介電 常數係約2 0至2 5，此乃意謂這些物質約5至6 n m厚度是 -6 - 1276700 (3) 相當於二氧化矽1 nm的厚度。 經由ALD沉積之氧化鉻薄膜展現了良好的絕緣特性 ，包括高介電常數及低滲漏度。然而，主要的關鍵是其無 法平滑地直接沉積在氫-端基的表面上’替代地’其便需 要一薄層之二氧化矽以啓動均一性。舉例之’可參考 Conley 等人之 “Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate”，Electrochemical and Solid-State Letters，5 期（5 月份），C 5 7 - 5 9 頁（2 0 0 2 年 )及其內列舉之參閱文獻。由於二氧化矽難以達成相當於 1 nm之厚度，所以並不需要薄的二氧化矽介面層。氫-端 基之矽表面是表示不含任何原始之二氧化矽的矽表面，且 其矽之懸盪鍵是以氫爲鏈端。此氫-端基之矽表面是標準 工業半導體淸潔程序中的結果。這些標準淸潔程序典型地 係將矽晶圓快速地浸入HF溶液中，以產生以氫爲鏈端之 矽表面，也就是所謂的氫鈍化作用。 對二氧化飴的硏究，顯示出在適當的條件下一平滑且 無定形之二氧化飴薄膜可直接沉積到氫-端基之矽表面上 °將5.7nm厚的二氧化鈴直接沉積至氫-端基之矽表面時 ’可達成10.5的介電常數及相當於2.1 nm厚度的電容量 。由於另一硏究顯示可進一步減低相對應厚度至〗nm會 更低’所以非常能符合期望。然而，沉積之二氧化給薄膜 仍然承受了各種問題。問題之一是其低結晶溫度將導致半 導體裝置製造過程甚低的熱量積聚。另一問題是，二氧化 f合與矽基材之介面品質相對於二氧化矽//矽介面時顯得相 1276700 (4) 對地不佳。當集成到半導體裝置構件時，此舉會引起低的 通道流動性。
目前已顯示，薄的絕緣體交替層膜可產生一能調整特 性之複合層膜（或奈米疊膜）。Zhang等人早先的硏究， “High permittivity thin film n a η ο 1 a m i n a t e s ’’，Journal of Applied Physics，87 卷，4 期，2000 年 2 月 15 曰，顯示 了 Ta205-Hf02、Zr02- Hf02、及 Ta205 - Ζι·02 可展現依視 奈米疊層膜之厚度而定的不同特性。
早先的硏究也顯示高k介電質膜之特性可經由摻雜鋁 而改質。舉例之，M a等人之美國專利第6，0 6 0，7 5 5案號 u Aluminum-doped zirconium dielectric film transistor structure and deposition method for same”（其內容將倂 入本文供參考）揭示了以三價金屬如鋁摻入高介電常數之 物質如氧化鉻可使結晶溫度增高，如此所得之薄膜在高溫 處理條件下將維持無定形。摻雜鋁之氧化鉻薄膜可產生具 有更佳均一性但稍微低之介電常數的無定形膜。 除了主要方法之外，現代半導體裝置構件的基本沉積 法之一是化學蒸氣沉積法（CVD )。在CVD中，前驅物 氣體或蒸氣之組合物將在高溫下流過晶圓表面。然後，在 欲發生沉積的熱表面處會進行反應。在CVD沉積法中晶 圓表面之溫度係一重要因子，因爲其會影響前驅物的沉積 反應及沉積在大面積晶圓表面的均一性。典型地，CVD 需要在400至8 00 t的高溫。從均一性及不純度來看’低 溫下之CVD將易於產生低品質薄膜。爲了降低沉積溫度 -8 - 1276700 (5) ’可在富含電漿之化學蒸氣沉積法（p E c V D )中以電 量激發前驅物。CVD法中之前驅物及程序條件應小 擇以避免會導致粒子產生之氣相反應。CVD薄膜的 性也是程序條件的函數，且通常在非常薄的膜層下並 分良好。 另一已知悉爲原子層沉積法（ALD或ALCVD) 積技術在氣相反應及薄膜均〜性上比C V D技術有更 的增進。在ALD中，各前驅物蒸氣係以交替的順序 處理室內：前驅物、淸洗氣體、反應物、淸洗氣體， 驅物吸附在基材上，隨後再與反應物反應。ALD法 種的修正，但所有基本的ALD法都包含兩個明顯的 :交替地注入前驅物以及使前驅物吸附作用達到飽和 在ALD中，前驅物係傳送到室內再吸附於基材 上。吸附溫度比 CVD法的反應溫度還低，並且所吸 量對晶圓表面之溫度也較不敏感。然後關掉前驅物， 洗氣體送進室內以淸除該室容積內之所有殘留的前驅 接著，將反應物送入該室中與已吸附之前驅物進行反 形成所需的薄膜。然後，將另一淸洗氣體送進室內以 殘留在該室容積內之所有反應物蒸氣。藉由交替蒸氣 之前驅物及反應物，氣相反應的可能性會減至最低’ 允許在VCD技術中無法使用的較寬範圍之可行前驅 同時也由於吸附機制之故，所沉積之溥膜非常均勻’ 因爲一旦表面飽和後額外的前驅物及反應物將不再進 被吸附或反應，而會剛好用盡° 漿能 0ΒΕ J\j ^ 均一 不十 之沉 顯著 注入 讓前 有各 特性 〇 表面 附之 將淸 物。 應以 淸除 股流 並可 物。 此乃 —'步 -9- (6) 1276700 由於不同的沉積機制’ ald法中對前驅物之 和C V D法不盡相同。A L D法之前驅物必須具有自 效應，如此將只有單層的前驅物會吸附到基材上。 此一自我設限效應，所以每一循環只有一個單層] 層沉積，縱使在提供過多之前驅物或額外的時間之 ，額外的前驅物也無法沉積在該生成之層膜上。在 限模式中，ALD法所設定之前驅物必須能迅速地 欲沉積表面的鍵結位置上。一旦吸附後，前驅物就 反應物反應而形成所需薄膜。在CVD法中，前驅 應物是一起到達基材處，並從前驅物與反應物之反 續地沉積形成薄膜。CVD法中的沉積速率係與前 反應物的流速成正比，並且也與基材溫度成正 CVD法中，前驅物和反應物必須在欲沉積表面上 應以形成所需薄膜。 因而有很多可用之CVD前驅物並不適於做爲 驅物，反之亦然。所以，選擇A L D法所用之前驅 得重要或變得顯而易見。 硝酸鹽（Ν Ο 3 )配位子係一有功效的氧化劑及 ，其可強力地與許多化合物反應。Gates等人之美 弟 6,203,613 条號’ “Atomic layer deposition with containing precursors”揭示了 一可特定地使用金屬 並與氧化劑、硝化劑及還原輔反應物結合而各別沉 物、硝化物及金屬薄層的ALD方法。 與Gates等人相似地，其他公告文獻也顯示出 要求也 我設限 也因爲 获亞-單 情況下 自我設 吸附在 必需與 物和反 應中持 驅物和 比。在 同時反 ALD前 物就顯 氮化劑 國專利 nitrate 硝酸鹽 積氧化 藉使用 -10- 1276700 (7)
硝酸锆前驅物連同氧化劑如水、或甲醇的氧化銷ALD沉 積法，及藉使用硝酸飴前驅物連同氧化劑如水、或甲醇的 二氧化飴A L D沉積法。舉例之，可參閱0 n 0等人之美國 專利第 6,42 0,2 79 案號，“Method of using atomic layer depositon to deposite a high dielectric constant material on a substrate”，其內容將倂入本文供參考。然而，吾人 之硏究顯示出，經由硝酸飴與氧化劑所沉積之二氧化飴具 有比預期還低的介電常數，可能是由於二氧化給薄膜的富 氧特性所致。 所以，較有利的是減低二氧化飴的氧含量，才能增進 二氧化給薄膜之品質。 較有利的是在氫-端基之矽表面上使用硝酸鉛，以便 平滑均一地啓動二氧化給層膜。 較有利的是形成奈米疊層膜，以藉由改變組成份來修 正薄膜之特性。
較有利的是將氧化鋁摻入二氧化飴中，以便儘可能地 修正複合薄膜之特性，如介面品質及較低的滲漏電流。 較有利的是摻雜鋁不純物，以增加金屬氧化物的結晶 溫度。 【發明內容】 本發明係關於一種可在形成金屬氧化物奈米疊層膜期 間錯由使用第一個含金屬硝酸鹽之前驅物做爲第二個含金 屬前驅物之氧化劑的方法。 -11 - 1276700
本發明的目標之一係提供一種可藉使用含硝酸鹽之前 驅物做爲另一前驅物之氧化劑，以使氧化物奈米疊層膜沉 積的原子層沉積法。 本發明之另一目標係提供一種可藉使用含金屬硝酸鹽 之前驅物做爲另一含金屬前驅物之氧化劑，以使氧化物奈 米疊層膜沉積的原子層沉積法。 本發明之另一目標係提供一種可藉使用含硝酸飴之前 驅物做爲另一含鋁前驅物之氧化劑，以使二氧化飴/氧化 鋁奈米疊層膜沉積的原子層沉積法。 本發明之另一目標係提供一種可藉使用含硝酸飴之前 驅物做爲另一含鋁前驅物之氧化劑，以使二氧化飴/氧化 鋁奈米疊層膜沉積的原子層沉積法，而該奈米疊層膜可用 做爲半導體應用中之閘極介電質或電容器介電質。 由於ALD法之沉積技巧具有順序特徵，所以彼是沉 積奈米疊層膜的適當方法。可用於金屬氧化物奈米疊層膜 之沉積的習知 ALD方法需要四個各別的前驅物遞送（連 同適當的淸洗步驟），即導入第一個金屬前驅物，然後是 氧化劑以提供第一層金屬氧化物，接續地第二個金屬前驅 物，然後另一個氧化物以提供第二層金屬氧化物。第一層 金屬氧化物與第二層金屬氧化物則一起形成金屬氧化物奈 米疊層膜。 本發明係提供一可供金屬氧化物奈米疊層膜沉積之 A LD方法，彼只需要兩個各別的前驅物遞送（連同適當 的淸洗步驟），即導入第一個含金屬硝酸鹽之前驅物，然 -12- (9) 1276700 後第二個含金屬之前驅物。該含金屬硝酸鹽之前驅物係作 用爲該第二個金屬之氧化劑以便形成金屬氧化物奈米疊層 膜。 經由排除了氧化劑步驟，本發明可顯著地簡化沉積方 法。過程時間及系統遞送之繁複性也幾乎可減掉一大半。 再者，排除了各別的氧化步驟後更可讓金屬氧化物之 組成份有較佳的控制，進而增進奈米疊層膜之品質。先前 技藝中額外的氧化步驟，因含有豐富的氧氣（特別是與硝 酸鹽前驅物結合時），將易使金屬氧化物層富含氧。 本發明係說明在任一 ALD法中利用含金屬硝酸鹽之 前驅物做爲另一含金屬前驅物的氧化劑以使金屬氧化物奈 米疊層膜沉積。本發明中之金屬可爲任一金屬物質，如 IB 族（Ci〇 、IIB 族（Zn) 、IIIB 族（Y) 、IVB 族（Ti 、Ζι·、Hf) 、VB 族（V、Nb、Ta) 、VIB 族（Cr、Mo、 W ) 、VIIB 族（Mn) 、VIIIB 族（Co、Ni ) 、Ϊ11Α 族（ A1、Ga、In ) > IVA 族（Ge、Sn )、或稀土族（La、Ce 、Nd、Sm、Gd )。奈米疊層膜一詞在本發明中係廣泛地 定義，其乃意於涵蓋具有不同物質之薄層膜或具有相同物 質之薄層膜。在本發明的某些方面，該來自於含金屬硝酸 鹽之BU驅物的金屬和該含金屬則驅物的金屬是不同的金屬 。因此，奈米疊層膜係包括多數個不同物質的薄層膜：來 自於含金屬硝酸鹽之前驅物的金屬氧化物及來自於含金屬 前驅物之不同金屬的氧化物。在本發明的某些方面，來自 於含金屬硝酸鹽之前驅物的金屬和來自於含金屬前驅物之 -13- 1276700 (10) 金屬可爲相同的金屬。因此，奈米疊層膜就可包括多數個 相同金屬氧化物質的薄層膜。這些取自相同金屬氧化物質 之薄層膜只能在沉積的時間點區分’亦即每一沉積循環只 沉積一層薄膜，而無法於沉積後辨別，也就是說，在沉積 完成後其中一層的薄膜是無法與另一層區分。
典型的金屬硝酸鹽具有化學式M (N03)x，其中Μ 係表示金屬物質，而x是Μ的價數。舉例之，若μ表示 具有4價之飴，則硝酸鉛之化學式爲Hf ( Ν〇3 ) 4。
本發明的主要目標係使含金屬硝酸鹽之前驅物作用爲 氧化劑，以控制導入處理室內之氧量，並簡化程序流程。 所以，在本發明範圍內只需在該含金屬硝酸鹽之前驅物中 保留至少一個硝酸鹽（Ν〇3 )配位子。在不影響本方法之 效益下，某些，但並非所有Ν〇3配位子是可被取代基R 取代的。使含金屬硝酸鹽之前驅物中的Ν〇3配位子還原 也可提供控制機制，進而控制導入處理室內的氧量，以便 調整所得之奈米疊層膜的特性。該經取代之前驅物可提供 前驅物具有修整之特性，如揮發性及熱安定性。 取代基R可爲多種配位子，例如氫，烴如甲基（C Η 3 )、乙基（C2H5) ’氧’含氧硝酸鹽如]Sf〇2、Ν2Ο5，經基 ，芳族基，胺，烷基，矽烷基，醇鹽，二酮，以及彼等之 任一混合物。 第二個含金屬前驅物可含有或不含氧。並可選擇另外 之含氧前驅物，以引導更多氧摻入，也可選擇非含氧之前 驅物以減少氧量。該含金屬前驅物可爲任一下列物質：金 -14- (11) 1276700 屬烷基類、金屬鹵化物、金屬二酮鹽、金屬醇 化物、金屬矽烷基類、金屬胺化物、金屬乙醯 金屬第三-丁醇鹽、金屬乙醇鹽及彼等之混合 〇 上述之第一個前驅物/淸洗/第二個前驅 A LD沉積順序可不斷重覆，直到所需厚度達 後之順序可爲第一個前驅物/淸洗/第二個前 的完整次序，或者只是一個前驅物/淸洗的半 後一個順序之選擇可些微修正沉積薄膜的頂部 在較佳具體實施例中，第一個金屬是飴或 發明係提供二氧化給/金屬氧化物奈米疊層膜 積法，彼係使用含硝酸給之前驅物做爲含金屬 化劑。該方法包括步驟爲，提供一含硝酸飴之 後淸除該硝酸飴前驅物，接著提供一含金屬前 地淸除該含金屬前驅物。交替的導入前驅物可 該含金屬前驅物之間產生反應，進而形成二氧 氧化物之奈米疊層膜。 在另一較佳具體實施例中，第一個金屬是 ，且第二個金屬是鋁金屬。本發明係提供二氧 銘奈米疊層膜之原子層沉積法，彼係使用含硝 物做爲含鋁前驅物的氧化劑。該方法包括步驟 含硝酸鈴之前驅物，然後淸除該硝酸耠前驅物 一含鋁前驅物並接續地淸除該含鋁前驅物。交 驅物可在硝酸給與該含鋁前驅物之間產生反應 鹽、金屬氫 基丙酮鹽、 物和組合物 物/淸洗的 成爲止。最 驅物/淸洗 套次序。最 表面。 鉻金屬。本 之原子層沉 前驅物的氧 前驅物，然 驅物並接續 在硝酸飴與 化給與金屬 飴或鉻金屬 化飴/氧化 酸給之前驅 爲，提供一 ，接著提供 替的導入前 ，進而形成 -15- (12) 1276700 二氧化飴與氧化鋁之奈米疊層膜。
在沉積二氧化給/氧化鋁奈米疊層膜以用於半導體應 用的另一較佳具體實施例中，本發明的第一個步驟係在曝 露於硝酸飴前驅物之前，先提供氫-端基之矽表面。硝酸 給前驅物與氫-端基之矽表面的組合可導致並啓動二氧化 給直接沉積於該氫-端基之矽表面上，而無需培育時間或 一薄層之二氧化矽介面層。接著，將基材曝露於一連串的 硝酸飴脈送中、接著是室內淸洗、然後是含鋁前驅物，接 下來是另一個室內淸洗。重複此一順序直至所需厚度達到 爲止，而最後步驟是含銘前驅物脈送/室內淸洗，或是硝 酸鈴脈送/室內淸洗。以沉積後退火處理繼續此製造過程 ，最近沉積一閘極電極物質。
該硝酸飴之前驅物可爲無水硝酸飴以使水含量減至最 低。而該含鋁前驅物可爲鹵化鋁如氯化鋁、或碘化鋁。此 含鋁前驅物也可爲有機金屬前驅物’如三甲基鋁或三乙基 金呂則驅物。 二氧化飴/氧化鋁奈米疊層膜之沉積作用可包括另一 步驟，亦即使基材加熱至2 0 0 °C以下之溫度’較佳地在 15〇t：與200°C之間，特定地是17〇°C。 室內淸洗步驟可使用任何惰性氣體如氬’或不活潑氣 體如氮氣來進行。 【實施方式】 圖]係一先前技藝方法的流程圖並顯示了使氧化物奈 -16- (13) 1276700 米疊層膜沉積之步驟。步驟1 0是在處理室內提供一基材 。該室及基材已設好條件以進行沉積方法，例如使氧化物 介面層生成（1 0a )。步驟1 1至1 4係提供兩層式氧化物 奈米疊層膜的第一個金屬氧化物。步驟1 1先提供第一個 金屬前驅物如氯化飴（HfCl4 )以使該前驅物吸附在基材 上。步驟1 2則提供淸洗步驟以除去在處理室內之前驅物 。步驟1 3乃提供該處理室第一個氧化劑如水、醇、氧、 或臭氧。此氧化物會與吸附的第一個金屬前驅物反應以形 成第一個金屬氧化物如二氧化飴。步驟1 4則提供淸洗步 驟，以氮氣除去氧化劑及副產物。然後，該兩層式氧化物 奈米疊層膜的第二個金屬氧化物將在步驟1 5至1 8中提供 。步驟15提供第二個金屬氧化物如氯化鋁（A1C13 )以使 此前驅物吸附於先前以沉積之基材表面上或在其上反應。 步驟1 6則提供淸洗步驟，以氮氣除去處理室內之前驅物 。步驟1 7則提供該處理室第二個氧化劑如水、醇、氧、 或臭氧。此氧化物會與吸附的第二個金屬前驅物反應以形 成第二個金屬氧化物如氧化鋁。步驟1 8乃提供淸洗步驟 ，以氮氣除去氧化劑及副產物。在步驟1 9中，重複步驟 1 1至1 8直到所需厚度達成，然後將此奈米疊層膜進行一 可選擇的退火步驟20以增進薄膜品質如薄膜密實化。 圖2係顯示利用含硝酸鹽之前驅物做爲第二個前驅物 之氧化劑以使氧化物奈米疊層膜沉積的本發明方法步驟。 步驟Π 〇是在處理室內提供一基材。該基材在開始沉積之 前已進行適當的準備。沉積通常是在低壓下發生，典型地 -17- (14) 1276700 係在1 Torr壓力下，所以該 約在數毫托範圍內以減少可能 度以利於第一個前驅物之吸附 係在1 5 0至2 0 0 °C之間。爲了 是設定在比基材溫度還更低的 凝，該室壁也需處於大約和前 型地在5 0 °C至1 〇 〇 °C之間。對 8 8 °C，而對處理室就沒有特別 原子層沉積技巧，此乃意謂著 以該室之體積最好是小一點以 飽和，及能快速地淸除前驅物 前驅物也需先製備。此沉 的前驅物依序地運送到處理室 適當溫度以便有很好的蒸氣壓 體前驅物而言，乃表示此前驅 溫是較適當的。對液體前驅物 溫下爲液態，所以前驅物溫度 蒸氣壓而定。高揮發性液體前 蒸氣壓，所以，爲了維持良好 低溫下是較適當的。而低揮發 設定。溫度較高時，蒸氣壓也 較容易。然而，溫度應設定得 受損害如熱分解）還低。 待處理室及基材預備好後 室需以泵抽低至基本壓力， 的污染。需要預備好基材溫 。最佳吸附作用的典型溫度 防止在室壁上沉積，該室壁 溫度。而爲了避免前驅物冷 驅物蒸氣相同的溫度下，典 硝酸飴而言適當的溫度是約 的設定。由於此方法是使用 有一依序的前驅物脈送，所 加速前驅物在此室容積內的 〇 積技巧係使用化學蒸氣方式 內。所以，前驅物需維持在 ，能傳送到處理室中。對氣 物在室溫下爲氣態，所以室 而言，乃表示此前驅物在室 之設定應依此前驅物的平衡 驅物如醇及丙酮具有高平衡 的蒸氣壓，設定在約室溫的 性液體前驅物就需要高溫度 較高，因此前驅物的傳送也 比最大溫度（此時前驅物會 ，在下一個步驟Π]中導入 -18- (15) 1276700
第一個含金屬硝酸鹽之前驅物。此前驅物含有若千與第一 個金屬鍵結之硝酸鹽配位子N〇3。視第一個金屬的鍵價而 定，硝酸鹽配位子數目可在1個硝酸鹽配位子至塡滿該金 屬鍵價之最大配位子數中變化。舉例之，含硝酸飴之前驅 物可含有1至4個硝酸鹽配位子。本發明之基本槪念係使 用硝酸鹽配位子作用爲氧化劑，所以，只需要一個硝酸鹽 配位子。硝酸鹽配位子在前驅物中的實際數目可做爲控制 因子以使摻入奈米疊層膜內之氧量最佳化。
在讓第一個含金屬硝酸鹽之前驅物完全吸附於基材上 達一適當時間後，將處理室內的前驅物淸除乾淨。吸附特 性會自我受限，所以前驅物不會使一層以上的單層膜吸附 在基材表面，典型地是只有一層亞-單層會吸附上去。此 步驟的典型時間係數秒至數分鐘，端視處理室之設計、室 容積、及基材布局的複雜性而定。在利用蓮蓬頭傳送的處 理室設計中，前驅物的行程很短’且對基材所有面積而言 是相當均勻，所以使前驅物沉積在基材上之完全吸附時間 的過程很短。對照下，若前驅物是設計成從處理室之一端 傳送而在另一端耗盡時’前驅物的損耗效果會延長吸附時 間。類似地，較小的室容積可提供較短的吸附時間’此乃 因爲會有較迅速的室飽受作用。基材之布局也會影響吸附 時間。在具有深壕溝之構件中，前驅物損耗效果及前驅物 傳送效果也會延長吸附時間。 待第一個含金屬硝酸鹽之前驅物吸附於基材上之後， 關掉此前驅物，然後淸洗處理室以預備步驟n 2之第二個 -19- (16) 1276700 前驅物的導入。淸洗可藉由抽吸步驟排空處理 前驅物而達成目的。抽吸步驟之特徵是減低室 所有氣體。淸洗也可藉由置換步驟利用非反應 氣或惰性氣體以推出所有在處理室內之前驅物 之特徵是配合關掉前驅物並打開淸洗氣體以維 淸洗步驟中可使用此兩種步驟之組合，此乃表 抽空步驟，接著使用氮氣或氬氣之置換步驟。 淸洗時間愈長，則除去前驅物就更完全， 下降。經濟效益上之理由指出了最短的淸洗時 最佳的淸洗時間，是前驅物殘留物的存在不可 序，並且不用規定完全除去前驅物。 在室內排除含硝酸鹽之前驅物後，於步驟 二個含金屬前驅物導入處理室內。該已吸附之 是來自第一個前驅物之第一個金屬氧化物或是 子或者是此二者，將與第二個前驅物中之第二 以便在兩層式氧化物奈米疊層膜中形成第一個 和第二個金屬氧化物。如圖]所示，先前技藝 米疊層膜的已知方法是使用如水、氧氣、醇、 化劑以形成金屬氧化物，所以需要8個各別的 洗/氧化劑/淸洗/前驅物/淸洗/氧化劑/ ，取而代之地，本發明只需要4個脈送：有氧 前驅物/淸洗/前驅物/淸洗。 奈米疊層膜形成後，可在步驟Π 4中淸除 第二個前驅物。再次，此淸洗步驟可爲抽空步 室中現存之 壓以便排空 性氣體如氮 。置換步驟 持室壓。在 示可先使用 但通過量會 間，所以， 影響整個程 1 1 3中將第 物質，不管 硝酸鹽配位 個金屬反應 金屬氧化物 之氧化物奈 或臭氧之氧 前驅物/淸 淸洗之脈送 化劑能力之 處理室內的 驟、或置換 -20 - Ϊ276700 (17) 步驟、或此二者步驟之組合。 在步驟1 1 5中，重複上述之4個步驟n丨、丨]2、1 1 3 及】1 4直到所需之厚度達成。然後，在步驟I〗6中，於較 高溫度下，如4 0 0至100(rc，使所得之奈米疊層膜退火 ’以增進薄膜品質。 圖3係利用硝酸鈴前驅物做爲氧化劑以使奈米疊層膜 沉積的流程圖。步驟1 20是在處理室內提供一基材。該基 材或該室需適當地準備以供原子層沉積法之用。下一步驟 1 2 1是導入含有4個硝酸鹽配位子之硝酸飴前驅物Hf ( N〇3 ) 4。待硝酸給前驅物吸附於基材後，關掉此前驅物， 然後在步驟122中淸洗處理室。接著，在步驟123中將一 含金屬前驅物導入於處理室內。含金屬前驅物中之金屬將 與已吸附之物質反應而生成二氧化飴/金屬氧化物奈米疊 層膜購件。 該含金屬前驅物係經選擇以便與硝酸飴反應。典型的 含金屬前驅物有鹵化鋁，如氯化鋁或碘化鋁。其他可行之 鋁前驅物包括有機金屬前驅物如三甲基鋁、或三乙基鋁。 在二氧化給/金屬氧化物奈米疊層膜形成後，於步騾 1 2 4中，淸除處理室內之含金屬前驅物。於步驟1 2 5中重 複上述之4個步騾1 2】、1 2 2、1 2 3及1 2 4直到所需之厚度 達成。然後，在步驟1 2 6中，於較高溫度下，如4 0 0至 1 0 0 0 °C，使所得之二氧化飴/金屬氧化物奈米疊層膜退火 ，以增進薄膜品質。 圖4係於半導體製程中利用硝酸給前驅物及鋁前驅物 -21 - 1276700 (18) 以使二氧化鈴/氧化鋁奈米疊層膜沉積的方法流 驟1 3 0係於原子層沉積處理室內提供半導體基4 封端的矽表面。 半導體基材已進行所有符合高k介電膜之電 序。在高k電容器介電質之例子中’需預備好基 底面電極。在高k閘極介電質之例子中，需預備 可接收閘極介電質。此一製備包括裝置隔離構件 閘極圖案形成步驟（若使用金屬閘極程序時）。 備半導體基材使具有氫-封端之矽表面。此氫-封 面是一來自許多標準工業半導體淸洗過程的產物 準淸洗過程典型地有，將矽晶圓快速浸入HF溶 任何矽表面上之原始氧化物’進而產生以氫爲鏈 面。此氫·封端之矽表面必須除掉所有可能減低B 質之k値的微量原始二氧化矽。實驗顯示硝酸給 氫-封端之矽表面的組合可造成如下之結果，即 時間及一薄的二氧化矽介面層便可啓動二氧化飴 在該氫-封端之矽表面上。 待基材及處理室已爲原子層沉積法而適當準 下一個步驟131中導入硝酸飴前驅物Hf(N03 酸鉛前驅物吸附於基材上之後，關掉此前驅物， 驟1 3 2中將其淸除吹掃出處理室。接著，在步驟 一含鋁前驅物導入處理室中。該含鋁前驅物內之 吸附之物質反應而產生二氧化飴/氧化鋁奈米疊 。待二氧化飴/氧化鋁奈米疊層膜形成後，於步 程圖。步 Ϊ上之氫- 路製作程 材使具有 好基材使 之形成及 然後，製 端之矽表 。這些標 液以除去 端之石夕表 δ k介電 則驅物與 無需培育 直接沉積 備後，在 > 4。在硝 然後於步 1 3 3中將 鋁將與已 層膜構件 驟1 34中 -22- (19) 1276700 淸除處理室內之含鋁前驅物。在步驟1 3 5中重複上述之4 個步驟1 3 1、I 3 2、1 3 3及1 3 4直到所需之厚度達成。然後 ，在步驟1 3 6中，於較高溫度下，如4 0 0至1 〇 〇 〇 t，使 所得之二氧化給/氧化鋁奈米疊層膜退火，以增進薄膜品 質。
圖5 a - 5 d係顯示於半導體閘極介電質應用之沉積步驟 。圖5 a係表示在沉積閘極介電質前的部份處理之積體電 路（I C )裝置構件。圖示之構件可依任何製造方法形成。 圖5 a所示之構件可用於一替代性閘極方法，其包括矽基 材141、界定閘極堆疊圖案之場氧化物142 '及氫·封端之 矽表面1 40。在沉積高k閘極介電質前的最後一個步驟是 將此砂表面曝露於H F中以製備氫-封端之表面。曝露於 HF中可表示爲浸入液體HF槽內，或曝露於HF蒸氣中。 HF將蝕刻所有原始氧化砂以留下氫-封端之表面。
圖5b係顯示脈送硝酸飴Hf ( Ν〇3 ) 4前驅物後的ic 裝置構件。硝酸飴脈送後，無需培育時間或一薄的二氧化 矽介面層即可啓動二氧化紿直接沉積在該氫-封端之表面 上。此圖只顯現示意性代表的二氧化飴層1 4 3。實際的氧 化飴層可能會或不會連貫遍地及整個表面。同時該等硝酸 鹽配位子也可能會或不會在此二氧化給層上。 圖5 c表示在氮淸洗以淸除處理室內之硝酸飴並脈送 一氯化鋁A1C13前驅物後的1C裝置構件。當氯化鋁脈送 後就可形成一氧化鋁層1 4 4。氯化鋁前驅物之目的是要產 生一氧化鈴/氧化銘奈米疊層膜。 -23- (20) 1276700 圖5 d是顯示經過另一硝酸飴脈送而沉積另一層二氧 化鉛層1 4 3，並經另一氯化鋁脈送而沉積另一層氧化鋁層 1 44 ’之後的1C裝置構件。重複此一次序直到奈米疊層膜 達成所需厚度。然後’使此製造過程持續進行沉積後退火 處理，再沉積一閘極物質如閘極金屬。接著進行化學機械 磨光（C Μ P ) 步驟以形成閘門堆疊式構件。 依循圖5a-5d所述之過程進行1〇次Hf(N03) 4/ A 1 C 13之循環可沉積二氧化給/氧化鋁奈米疊層膜。沉積 後退火條件是在氮氣中8 5 0 °C下60秒。在沉積後及沉積 後退火步驟之後，該薄膜在視覺上是很均勻的。分光鏡橢 圓光度法測量顯示退火後厚度爲4nm，此乃表示每一循環 可生成〇 · 4 n m。另一經由2 0次循環所沉積之二氧化給/ 氧化銘奈米疊層膜，退火後發現約有1 5.2 n m厚，相當於 每一循環生成〇.76nm。此沉積速率範圍比先前報告之Hf (N〇3 ) 4/ H20或A1 ( CH3 ) 3 / H20沉積作用還高約3 至5倍。 圖6係顯示利用本發明方法所沉積之4nm二氧化飴 /氧化鋁奈米疊層膜其電容量對偏壓的曲線圖。經由陰 影障板噴鍍鉑（Pt )小點以形成電容器。由於鉑金屬閘極 的功函，所以閥値電壓會改變。算出Pt功函，一電容性 相對應之厚度（C E T ) 2 · 6 n m就可從C m a x (在-1 . 2 V之偏 壓下）中獲得。此CET .顯示出奈米疊層膜的有效介電常 數是約5.9 °此介電常數比二氧化矽高約5〇%。經由ALD 之Hf(N〇3) 4/H2〇所沉積之具有類似物理厚度的二氧 -24- 1276700 (21)
化鉛膜層，其有效介電常數是在約1 〇之範圍內。如預期 地，二氧化飴/氧化鋁奈米疊層膜的介電常數比較低，此 乃因爲氧化銘（9)之體積介電常數低於二氧化給（25) 之故。圖6中CV曲線的輕微變形乃表示介面截留，其可 以程序的最佳化來消除。此CV曲線顯示磁滯現象效應， 其可由向前1 5 1及倒退1 5 2方向之偏壓曲線幾乎相同得到 應證。此低磁滯現象表示高品質的奈米疊層膜，並表示有 較低之電荷截留。 圖7·係顯示圖6所示之相同4nm薄膜其滲漏電流對 偏壓的曲線圖。雖然此滲漏電流比具有相類似 CET之 Hf02約大3個級數的量，但仍比具有相類似CET之二氧 化矽小了 2個級數以上的量。此4nm薄膜顯示在約5V處 電壓會故障。 【圖式簡單說明】 圖1 ·係可沉積奈米疊層膜之先前技藝方法的流程圖。 圖2.係藉使用硝酸鹽前驅物做爲氧化劑以沉積奈米疊 層膜之方法的流程圖。 圖3 .係藉使用硝酸給前驅物做爲氧化劑以沉積奈米疊 層膜之方法的流程圖。 圖4 .係藉使用硝酸飴前驅物及鋁前驅物前驅物以沉積 可用於半導體程序中之二氧化飴/氧化鋁奈米疊層膜的方 法流程圖。 圖5a-5d係顯示可用於半導體閘極介電質應用之二氧 -25 - 1276700 (22) 化飴/氧化鋁奈米疊層膜之沉積法中的步驟。 圖6.係顯示藉利用本發明方法所沉積之4nm二氧化 飴/氧化鋁奈米疊層膜其電容量對偏壓的曲線圖。 圖7 .係顯示該依此製得之相同4nm二氧化給/氧化 鋁奈米疊層膜其滲漏電流對偏壓的曲線圖。 主要元件對照表 140 氫 -封端之矽表面 14 1 矽 基 材 142 場 氧 化 物 1 43 二 氧 化 飴 層 144 氧 化 鋁 層 143’ 另 一 層 二 氧 化鉛j 1 44? 另 —* 層 氧 化 鋁層 15 1 向 、黨·· 刖 方 向 曲 線 1 52 倒 退 方 向 曲 線
-26-

Claims (1)

  1. ;，一…-乂-.…'··-_·.-^m· 濟正％ A f 丨 本.’· MI :摘尤 ! :‘科― I ---------------------一卜一./ 1276700 「- 公告本 (1) —— 一. 拾、申請專利範圍 第93 1 04977號專利申請案 中文申請專利範圍修正本 民國95年7月3日修正 1 · 一種原子層沉積方法，彼係使用第一個含金屬硝酸 鹽之前驅物做爲第二個含金屬前驅物之氧化劑以形成氧化 物奈米疊層膜，該方法包括步驟有： a·導入第一個含金屬硝酸鹽之前驅物； b .形成弟一個金屬硝酸鹽； c ·清除此第一個含金屬硝酸鹽之前驅物； d. 導入第二個含金屬前驅物； e. 氧化此第=個含金屬前驅物（因爲對該第一個金屬 硝酸鹽的反應）； f·清除此第一個含金屬前驅物。 2 ·如申請專利範圍第1項之方法，其中該等金屬係選 自 Cn、Zn、Y、Ti、Zr、Hf、v、Nb、Ta、Cr、M〇 w Μη、Co、Ni、Al、Ga、In、Ge、Sn、&、以、_、^、 Gd。 3 ·如申請專利範圍第1項之方法，其中該第一個含金 屬硝酸鹽之前驅物的〜些，並非所有之硝酸鹽配位子可經 取代基R取代，且該取代基R係選自氫、氧 '含氧硝酸 鹽、經基、方族基、胺、烷基、矽院基、醇鹽、二酮、以 及彼等之混合物。 4 .如申δ靑專利範圍帛1項之方法，其中該第二個含金 1276700 (2) 屬前驅物係一不含氧的前驅物。 5 ·如申請專利範圍第】項之方法，其中該第二個含金 屬前驅物係選自金屬烷基類、金屬鹵化物、金屬二酮鹽、 金屬醇鹽、金屬氫化物、金屬矽烷基類、金屬胺化物、金 屬乙醯基丙酮鹽、金屬第三丁醇鹽、金屬乙醇鹽及彼等之 混合物和組合物。 6· —種原子層沉積方法，彼係使用含硝酸飴之前驅物 做爲一含金屬前驅物之氧化劑以形成二氧化飴/金屬氧化 物奈米疊層膜，該方法包括步驟有： a.導入含硝酸給之前驅物； b .形成硝酸飴膜； c .清除此含硝酸飴之前驅物； d ·導入一含金屬目LI驅物； e ·氧化此含金屬前驅物（因爲對該硝酸飴膜的反應） f.清除此含金屬前驅物。 7. 如申請專利範圍第6項之方法，其中該含硝酸紿之 前驅物的一些，並非所有，硝酸鹽配位子可經取代基R取 代，且該取代基R係選自氫 '氧、含氧硝酸鹽、經基、芳 族基、胺、烷基、矽烷基、醇鹽、二酮、以及彼等之混合 物。 8. 如申請專利範圍第6項之方法，其中該含金屬前驅 物係一不含氧的則驅物。 9. 如申請專利範圍第6項之方法，其中該含金屬前驅 -2- 1276700 (3) 物係選自金屬烷基類、金屬鹵化物、金屬二酮鹽、金屬醇 鹽、金屬氫化物、金屬矽烷基類、金屬胺化物、金屬乙醯 基丙酮鹽、金屬第三丁醇鹽、金屬乙醇鹽及彼等之混合物 和組合物。 - 1 0 . —種原子層沉積方法，彼係使用第一個含金屬硝 · 酸鹽之前驅物做爲第二個含金屬前驅物之氧化劑以形成氧 化物奈米疊層膜，該方法包括步驟有： a. 導入第一個含金屬硝酸鹽之前驅物； 9 b. 使基材表面被此第一個含金屬硝酸鹽之前驅物所飽 和； c. 清除此第一個含金屬硝酸鹽之前驅物； d. 在無需導入反應物氣體之介入步驟下導入第二個含 金屬前驅物； e. 氧化此第二個含金屬前驅物（因爲對該第一個金屬 硝酸鹽之前驅物的反應）； f. 在無需導入反應物氣體之介入步驟下，於二個氧化 # 物第一奈米疊層薄膜中形成第一個金屬氧化物與第二個金 屬氧化物。 1 1 .如申請專利範圍第1 〇項之方法，其中該等金屬係 選自 Cu、Zn、Y、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W ' 、Μ η、C 〇、N i、A1、G a、I η、G e、S η ' L a、C e、N d、S m · 、G d 〇 1 2 .如申請專利範圍第1 0項之方法，其中該第一個含 金屬硝酸鹽之前驅物的一些，並非所有，硝酸鹽配位子可 -3- 1276700 (4) 經取代基R取代’且該取代基R係選自氫、氧、含氧硝 酸鹽、羥基、芳族基、胺、烷基、矽烷基、醇鹽、二酮、 以及彼等之混合物。 1 3 ·如申請專利範圍第】〇項之方法，其中該第二個含 金屬前驅物係一不含氧的前驅物。 1 4 ·如申請專利範圍第1 〇項之方法，其中該第二個含 金屬前驅物係選自金屬烷基類、金屬鹵化物、金屬二酮鹽 、金屬醇鹽、金屬氫化物、金屬矽烷基類、金屬胺化物、 金屬乙醯基丙酮鹽、金屬第三丁醇鹽、金屬乙醇鹽及彼等 之混合物和組合物。 1 5 · —種原子層沉積方法，彼係使用含硝酸飴之前驅 物做爲一含金屬前驅物之氧化劑以形成二氧化飴/金屬氧 化物奈米疊層膜，該方法包括步驟有： a. 導入含硝酸飴之前驅物； b. 使基材表面被此含硝酸鉛之前驅物所飽和； c. 清除此含硝酸鉛之前驅物； d. 在無需導入反應物氣體之介入步驟下導入一含金屬 前驅物； e. 氧化此含金屬前驅物（因爲對該硝酸鈴之前驅物的 反應）； f. 在無需導入反應物氣體之介入步驟下，於二個氧化 物第一奈米疊層薄膜中形成二氧化飴與一金屬氧化物。 16.如申請專利範圍第15項之方法’其中該含硝酸飴 之前驅物的一些，並非所有’硝酸鹽配位子可經取代基R -4- 1276700 (5) 取代，且該取代基R係選自氫、氧、含氧硝酸鹽、羥基、 芳族基 '胺、烷基、矽烷基、醇鹽、二酮、以及彼等之混 合物。 17·如申請專利範圍第15項之方法，其中該含金屬前 驅物係一不含氧的前驅物。 1 8 ·如申請專利範圍第1 5項之方法，其中該含金屬前 驅物係選自金屬烷基類、金屬鹵化物、金屬二酮鹽、金屬 醇鹽、金屬氫化物、金屬矽烷基類、金屬胺化物、金屬乙 醯基丙酮鹽、金屬第三丁醇鹽、金屬乙醇鹽及彼等之混合 物和組合物。 1 9. 一種原子層沉積方法，彼係使用硝酸給前驅物做 爲一含鋁前驅物之氧化劑以形成在半導體基材上之二氧化 紿/氧化鋁奈米疊層膜，該方法包括步驟有： a. 在一原子層沉積處理室內提供一在該半導體基材上 之氫·封端的矽表面； b. 將硝酸飴前驅物導入該室內； c. 使基材表面被該硝酸飴前驅物所飽和； d. 清洗該室； e. 在無需導入反應物氣體之介入步驟下將一含鋁前驅 物導入該室內； f. 氧化此含鋁前驅物（因爲對該硝酸飴前驅物的反應 ); g. 在無需導入反應物氣體之介入步驟下，於二個氧化物 奈米疊層薄膜中形成二氧化飴與氧化鋁。 -5 - 1276700 (6) 2 0 ·如申請專利範圍第1 9項之方法，其中該硝酸飴前 驅物係一無水硝酸鉛之前驅物。 2 1 ·如申請專利範圍第1 9項之方法，其中該含銘前驅 物係一鹵化鋁前驅物。 2 2 .如申請專利範圍第1 9項之方法，其中該含鋁前驅 物係一選自三甲基錕、及三乙基銘之有機金屬前驅物。 23·如申請專利範圍第19項之方法，彼可在步驟a之 後及步驟b之前進一步包括使該基材加熱至低於2 0 0 °C溫 度之步驟。 2 4 .如申請專利範圍第1 9項之方法，其中該處理室清 洗步驟可藉由將氮氣或惰性氣體流入該室內而完成。 2 5 ·如申請專利範圍第1 9項之方法，其中該處理室清 洗步驟可藉由抽空該室內之所有氣體而完成。 26·如申請專利範圍第19項之方法，進一步包括： h.在形成奈米疊層膜之後，清洗該室；以及 其中重複步驟b至g直到所需厚度達成，並以最後步 驟係步驟d。 27·如申請專利範圍第19項之方法，進一步包括： h ·在形成奈米疊層膜之後，清洗該室；以及 其中重複步驟b至g直到所需厚度達成，並以最後步 驟係步驟h。 2 8 ·如申請專利範圍第2 7項之方法，彼可在所需厚度 達成之後進一步包括沉積後退火步驟。 29·如申請專利範圍第28項之方法，其中該沉積後退 -6- 1276700 (7) 火時間係在1 0秒至5分鐘之間，而該沉積後退火溫度是 在4 0 0 °C至1 0 〇 〇 °C之間。 3 0 ·如申請專利範圍第1 〇項之方法，進一步包括： g·清除該第二個含金屬前驅物； 、 h·重複步驟a至f; · i·於二個氧化物第二奈米疊層薄膜中形成第一個金屬 氧化物與第二個金屬氧化物，且疊在該第一奈米疊層薄膜 之上。 參 3 1 ·如申請專利範圍第1 0項之方法，其中使基材表面 被該第一個含金屬硝酸鹽之前驅物所飽和包括使氫-封端 的基材表面被該第一個含金屬硝酸鹽之前驅物所飽和。 3 2 ·如申請專利範圍第1 5項之方法，進一步包括： g·清除該含金屬前驅物； h.重複步驟a至f ; i·於二個氧化物第二奈米疊層薄膜中形成二氧化飴與 該金屬氧化物，且疊在該第一奈米疊層薄膜之上。 0 3 3 ·如申請專利範圍第1 5項之方法，其中使基材表面 被該含硝酸飴之前驅物所飽和包括使氫-封端的基材表面 被該含硝酸鈴之前驅物所飽和。 34·—種形成高k介電閘極氧化物膜之方法，該方法 - 包括： _ 令含金屬硝酸鹽之前驅物吸附在矽基材的表面上； 令含金屬前驅物吸附在該含金屬硝酸鹽之前驅物的表 面上； -7- 1276700 (8) 氧化該含金屬前驅物（因爲對該含金屬硝酸鹽之前驅 物的反應）； 形成高k介電閘極氧化物膜。 3 5 ·如申請專利範圍第3 4項之方法，進一步包括： 提供氫-封端的矽基材表面； 其中使含金屬硝酸鹽之前驅物吸附在矽基材的表面上 包括使含金屬硝酸鹽之前驅物吸附在氫·封端的矽基材的 表面上。 36·如申請專利範圍第34項之方法，其中該含金屬硝 酸鹽之前驅物與含金屬前驅物各包括選自Cu、Zn、Y、Ti 、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Μη、Co、Ni、A1 ' Ga、In、Ge、Sn、La、Ce、Nd、Sm、Gd 之金屬。 -8 -
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