TW466722B - Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby - Google Patents
Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby Download PDFInfo
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- TW466722B TW466722B TW089125196A TW89125196A TW466722B TW 466722 B TW466722 B TW 466722B TW 089125196 A TW089125196 A TW 089125196A TW 89125196 A TW89125196 A TW 89125196A TW 466722 B TW466722 B TW 466722B
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0067—Packages or encapsulation for controlling the passage of optical signals through the package
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H9/02—Details
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- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/097—Interconnects arranged on the substrate or the lid, and covered by the package seal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/032—Gluing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
466722 I五、發明說明(l) 發明的領域: 本發明係有關於積體電路及一般類似裝置及其製造方 法。 發明背景: 在所有積體電路裝置製造上之一基本製程步驟是為1, 封裝11且涉及矽晶片之環境防護,它是積體電路之心臟及 作為梦晶片預定位置上與外部電路電性連結苒。 在目前三項主要用於封裝半導體之技術為:連線 (wire bonding)、自動連帶(tape aut〇maUc b〇nding,
TAB )及輕擊晶片(f U p ch i p )連線利用熱及超音波能量於 晶片上之焊接墊及封裝上之接點之間以金連線焊接。 自動連帶(TAB)使两銅線圈帶取代連線,銅線圈帶是 適合各別晶粒及封裝組合且具有合適之铜圖案。此獨特性 使其可連結晶片上各別的焊接墊或一組焊接墊。 輕擊晶片是適用於具有焊接凸塊形成於焊接墊之上表 面之積體電路晶粒’如此使得晶粒可被輕擊侧下方而.直接 與基底焊接。無須連線且可大幅節省封裝空間。 上述技術都各有特定限制,連線及自動連帶會有焊接 不良產生且使晶粒受到高溫及機械壓力。由封裝尺度的觀
點來看’連線及自動連帶是不準確的,會造成積體電路襞 置晶粒對封裝面積比範圍由1〇%至6〇%。 輕擊晶片僅能作為内連線而無法提供封裝,内連線遭 遇到焊接凸塊不均勻的問題及熱膨脹不協調而限制利用於 矽基底或熱膨脹性質與矽類似之材料。
5019-3609-PF.ptd 第4頁 466722 五、發明說明(2) 專利文獻有關積體電路及其製造方法之領域。 說明在申請人公開之PCT申請號碼W095/1 9645之說明 是製造積體電路裝置之方法及設備。 以下本發明人之美國專利或專利申請案是特別有相 關,5,Π 6,759 ;5,547,906 ;5,455,455 及 〇8/952,〇19。 發明概述: 本發明之目的為提供改良的封裝晶體基底基礎裝置及 其製造方法 因 基礎裝 以及至 在此晶 依 此依據本發明之 置包括一 少一封裝 體基底及 據本發明 袭晶體基底1包括 一基底,具 至 結構及 依 礎裝置 於 在 及此至 較 基底上 少一晶片 此至少一 據本發明 之製造方 曰 Wife 發 日曰體基 層,藉 此至少 之一較 有形成 尺度封 晶片尺 之一較 法包括 基底上提供— 此微結構 少一封裝 佳為,至 。黏著劑 上膠黏 層之間 少一封 ’如環 一較佳實施例中提供一種晶體基底 底’具有形成於其上之一微結構; 由一黏著劑密封在此微結構上,且 一封裝層之間定義至少一間隙。 佳實施例中亦提供一種晶片尺度封 於其上之一微結構;以及 裝’密封在此微結構上,且在此微 度封裝之間定義至少一間隙。 佳實施例中更提供—種晶體基底基 * 微結構;以及 密封至少一封裝層,且在此微結構 定義至少一間隙。 裝層是使用一黏著劑密封在此晶體 氧樹脂。
5019-3609-PF.ptd
第5頁 466722 3) 表發明之一較佳實施例中’晶體基底包括矽、鈮 <娌、组酸裡或石英。 - 較佳為,此至少一封裝層是透明的。 , 至少一凹處包括單一凹處或複數個凹處。 微結構可包括微機械結構、微電子結構及/或微光電 結構。 為了讓本發明之上述和其他目的、特徵、及優點能更 明顯易懂’下文特舉出較佳實施例,並配合所附圖式,作 詳細說明如下: 圖式之簡單說明 〔 為了讓本發明之上述和其他目的、特徵 '和優點能更 明顯易槿,所附圖表說明如下: 第1A及1B圖說明在本發明之實施例中一種晶體基底基 礎裴置’具有一凹處,之結構及操作。 第2A至2D圖說明顯不在第ία及1B圖之一般型式之四個 可選用實施例中之晶體基底基礎裝置之結構及操作。 第3圖說明顯示在第U至2D圖之型式之典型積體電路 裝置之部分剖面圖。 第4A、4B、4C、4D及4E圖,是舉例說明依據本發明之 一較佳實施例中一種製造使用於晶體基底基礎裝置之封裝、 層之製造方法之步驟。 第 5A、5B、5C、5D、5E、5F、5G、5H 及51 圖,是舉例 說明依據本發明之一較佳實施例中顯示在第1A至2D圖之型 式之一種製造使用於晶體基底基礎裝置之封裝層之製造方
5019-3609-PF.ptd 第6頁 466722 五、發明說明(4) 法之步驟c 第6A、6B、6ccπ 圖,是舉例說明依據太發明、6G、6H、61、61蝴 2B圖之型式之:3 ί 之另一較佳實施例中顯示在第 之製造方k㈣ 料晶體基底基礎裝置之封裝層 太發:之另7δ J杳71)、7E、7F及70圖’是舉例說明依據 造使用於晶體基底基礎裝置之封裝層之製造方法之步^ 第8A及8β®,是舉例說明顯示以第5A至51圖之方法製 造在第2Α及2C圖之型式之晶體基底基礎裝置之封裝層所使 用之設備。 第9Α及9Β圖’是舉例說明顯示以第6人至6](圖之方法製 造在第2Β圖之型式之晶體基底基礎裝置之封裝層所使用之 設備。 第1 0Α及1 0Β圖’是舉例說明顯示以第7Α至7(?圖之方法 製造在第2D圖之型式之晶體基底基礎裝置之封裝層所使用 之設備。 [符號說明] 12〜電性接觸片; 1 6~封裝之平面; 1 0 0〜微透鏡陣列; 1 〇 4 ~環氧樹脂; 1 0 8 ~電性接觸; i 1 2 ~導體襯墊; 1 0〜積體電路封裝; 14〜邊緣表面; I 8 ~凹處, 102〜晶體基底, 106~封裝層; II 0〜凸塊;
50!9-3609-PF.ptd 第7頁 466 722 五、發明說明(5) 114〜封裝層; 11 8〜環氧樹脂; 150〜光電或機電裝置 152〜晶體基底; 158〜電性接觸片; 1 62〜導體襯墊; 1 6 6〜間隔元件; 170、凹處; 202~晶體基底, 2 0 8〜電性接觸片; 212〜導體襯墊; 21 6〜間隔元件; 220〜凹處; 2 5 2 晶體基底; 260〜凸塊; 264〜封裝層; 2 6 8〜環氧樹脂; 2 80~凹處; 302〜環氧樹脂基光阻 306〜間隔層; 402〜黏著劑; 405〜凹處; 407〜分割基底; 4 1 0〜下封裝層; 11 6〜間隔元件; 1 20〜凹處; ; 154〜導電連接器; 1 5 6〜封裝層; 160〜凸塊; 164〜封裝層; 1 6 8〜環氧樹脂; 200〜光電或機電裝置; 206〜封裝層; 21 0〜凸塊; 214〜封裝層; 2 1 8〜環氧樹脂; 250~SAW增殖表面; 258〜電性接觸片; 2 6 2 ~導體襯墊; 266〜連接間隔元件; 270〜凹處; 3 0 0〜基底; 層;304〜罩幕; 400~封裝層; 406〜間隔層; 404〜基底; 408〜環氧樹脂層; 41 0〜封裝層;
5019-3609-PF.ptd 第8頁 4 66 722 五、發明說明(6) 408〜環氧樹脂層; 41 4 ~凸塊; 502-506 510 516 515 晶體基 導電連 封裝層 間隔層 定義容 50 1 ~凹槽; 5 1 8〜凸塊; 6 0 2〜黏著劑 604〜晶體基 6 0 9〜表面聲 607〜凹處; 61 0 ~電性接 680〜傳統晶 6 8 2 ~晶圓; 6 8 5 ~接合設 684〜研磨設 692〜罩幕曝 6 9 0〜光阻; 6 9 9 ~溶劑; 6 9 4〜接合設 695〜刻痕設 696〜容器; 412〜電性接觸片; 5 0 0〜基底; 5 0 4〜襯整; 5 0 8〜光電或機電裝置 51 2〜黏著劑; 513、514 〜G3 處; 5 1 7〜環氧樹脂; 51 9〜電性接觸片; 6 0 0〜封裝層; ; 6 0 6〜間隔層; 底; 波(SAW)增瘦層; 6 0 8 ~分割基底; 觸片; 6 1 4〜凸塊; 圓製造設備;681〜完整晶圓; 6 8 3〜保護層; 底; 接器; 積; 備; 備, 光機 備 備 686~接合晶圓; 687〜研磨劑; 691~罩幕; 693〜容器; 1 0 0 0〜晶圓; 686〜保護層; 1002〜晶圓: 6 9 8〜鉻酸鹽溶液
5019-3609-PF.ptd 第9頁 46Θ722 五、發明說明(7) 7 0 0 ~導電層沉積設備 7 0 2〜光阻溶液組成; 703〜光阻; 706〜顯影劑; 7 0 1〜光阻; 707〜晶圓; 7 0 4〜紫外線曝光系統; 71 0〜蝕刻容器; 7 0 8〜金屬钱刻溶液施; 7 1 4 ~切割刀具; 78;[〜完整晶圓; 783~保護層; 7 9 4 刻痕設備; 796〜刻痕後之晶圓; 7 9 8〜矽蝕刻溶液; 1 0 1 2 ~银刻洞; 1 0 1 8〜分配器; 1 024設備; 1 0 2 8〜刻痕後之晶圓, 1032~鉻酸鹽溶液; 8 01〜光阻; 8 0 3〜晶圓; 8 0 4〜紫外線曝光系統; 806〜顯影劑; 8 0 8〜金屬蝕刻溶液施; 81 4〜切割刀具; 881〜完整晶圓; 882〜接合設備; 7 1 2〜無電電鍍設備; 670〜晶圓製造設備; 7 82〜Pyr ex基底; 784〜接合設備; 7 9 3〜接合晶圓三明治; 1010〜容器; 1 0 1 4〜晶圓; 1 0 1 6〜填充環氧樹脂; 1 0 2 0〜填充洞之環氧樹脂 1 020〜溝槽; 1 030〜容器; 8 0 0〜導電層沉積設備; 8 0 2 ~光阻溶液組成; 807〜光阻; 805〜罩幕; 81 0〜蝕刻容器; 812〜無電電鍍設備; 880〜晶圓製造設備; 883〜保護層; 8 9 4 ~刻痕設借;
5019-3609-PF.ptd 第10頁 466722 五、發明說明(8) 884〜刻痕後之晶圓; 898~鉻酸鹽溶液; 9 01〜電沉積光阻; 9 0 3〜晶圊, 9〇4〜紫外線曝光系統; 9 0 6〜顯影劑; 9 0 8〜金屬蝕刻溶液施; 91 3 ~晶圓》 較佳實施例 現在請參照第1A 電路裝置之結構及操 且具有環境防護及機 封裝10具有複數個電 較佳為,電性接 1 6,此種接觸安排使 能鑲嵌在電路板上。 元件(未顯示):一體 片、抗反射塗層、偏 塊。 〜容器 9 0 0 導_電 902〜光阻 820*光阻 905〜罩幕 91 0〜钱刻 9 i 2〜無電 91 4〜切割 層沉積設備 溶液組成; 及1B圖說明 作,積體電 械強度之積 性接觸片1 2 觸片1 2由邊 得封裝1 0之 積體電路封 成形之二色 光鏡、光栅 在本發 路裝置 體電路 沿著邊 緣表面 平坦表 裝1 0可 性的濾 、積體 容器; 電鍍設備 刀具。 明之實施 包括相對 封裝1 0, 緣表面1 4 延伸至封 面及邊緣 包括一或 光片、彩 波導及光 例中積體 的薄及小 積體電路 分佈 裝之平面 表面兩者 多個下列 色?慮光 耦合凸 依據本發明之實 此由陰影線指明 請參照第2A至2D 之四個可選用實施例 示在第2A至2D圖之各 18 施良積體電路封裝1〇定義一凹處 及1B圖之一般型式 之結構及操作,顯 相對的薄及小且具 圖說明顯示在第丄A 中之積體電路裴置 積體電路裝置包括
5019-3609-PF,ptd 第11頁 4 6S 722 五、發明說明(9) 有環境防護及機械強度之積體雷 有複數個電性接觸片沿著邊緣表面K 1體電路封裂具 第2A圖顯示一積體電路裝置包括一 成在一晶體基底m之上,在基底m ^列1〇〇形 ,以-封裝層m密封,封裝層典型是形:土::氡樹 者封裝層之邊緣是形成電性接觸片1〇8,典型 璃/沿 :。❻’導體襯細較佳為連接基底細與電=片凸
依據本發明之一較佳實施例中,一封裝層1,业 疋形成一玻璃,及連接間隔元件il6是藉甴一黏著/,、二 環氧樹脂118密封在基底1〇2之上因而在微透鏡陣列1〇〇 封裝層114之間定義一凹處120。 成二色性的濾光 封裝層114較佳為透明的且在其上形 片及/或抗反射塗層。 第2B圖顯示一積體電路裝置包括一光電或機電裝置 150,如一化學感應器、—微透鏡陣列或一加逮器是藉由 一導電連接器154懸掛在一晶體基底152上。一封裝層I% 密封在基底152之下’封裝層典型是形成一玻璃,沿著封 裝層之邊緣是形成電性接觸片158,典型是定義成凸塊
160 ’導體襯墊162較佳為連接基底與152與電性接觸片 158。 ~ 依據本發明之一較佳實施例中,一封裝層164,典型 是形成一玻璃,及連接間隔元件166是藉由一黏著劑,如 環氧樹脂168密封在基底152之上因而在裝置150及封裝層
5019-3609-PF.ptd 第12頁 466722 發明說明(10) 164和156之間定義第一及第二凹處17〇及172 s 封裝層1 64較佳為透明的且在其上形成二色性的濾光 |片及/或抗反射塗層。 第2C圖顯示一積體電路裝置包括一光電或機電裝置 20 0形成在一晶體基底2〇2之上。一封裝層2〇6藉由環氧樹 月=204捃封在基底202之下,封裝層典型是形成一玻璃, 著封裝層之邊緣是形成電性接觸片2〇8,典型是定義成凸 塊210 ,導體襯墊212較佳為連接基底與2〇2與電性接觸片 208 ° 依據本發明之一較佳實施例中,一封裝層214,典型 是形成一玻璃,及連接間隔元件216是藉由一黏著劑了: 環氧樹脂218密封在基底2〇2之上因而在裝置2〇〇及封裝層 214之間定義一凹處220。 封裝層214較佳為透明的且在其上形成二色性的濾 片及/或抗反射塗層。 第2D圖顯示一表面聲波裝置(Surface Acoustic Wave,SAWj包括一SAW増殖表面250定義在一晶體基底252 之ΐ丄沿箸晶體基底252之邊緣是形成電性接觸片258,典 型疋疋義成凸塊260,導體概墊262較佳為連接基底盘252 與電性接觸片258。 ' β依據本發明之—較佳實施例中,一封裝層264,典型 是形成一玻璃,及連接間隔元件2 6 6是藉由一黏著劑了如 環氧樹脂268密封在基底252之上因而在裝置25〇及封蚩 264之間定義一凹處27〇。 一 m
^60722 五、發明說明(11) ---- 請參照第3圖說明顯示在第1A至21)圖之型式之益刑 體電路裝置之部分剖面圖,具有—凹處28〇。 請參照第4A、4B、4C、4D及4£圖,是舉例說明依據本 |赞明之一較佳實施例中一種製造使用於晶體基底基礎裝置 之封裝層之製造方法之步騍3請參照第4A及4]&圖,一基底 〇〇典型疋形成一玻璃 > 較佳為鐘上一環氧樹腊基光阻 層 302 ’ 典型是Microchem Corp. of Newton,MA,USA 所 提供商業用SU-8光阻。 ’ . , 光阻層302是經由一罩幕304曝光,如第4C圖所示,之 後顯景:?以定義間隔層306,如第4D圖所示*間隔層306典型 是矩形形態,如第4E圖所示。此些間隔層是分別對應第2A V 至2D圖之間隔元件116'166、216及266。 請參照第 5A、5B、5C、5D、5E、5F、5G '5H 及 51 圖, 是舉例說明依據本發明之一較佳實施例中顯示在第丨A至2d 圖之型式之一種製造使闬於晶體基底基礎裝置之封裝層之 製造方法之步驟。 請參照第5A圖,一封裝層400,典型之形式是如第4D 及4E圖所提俣’使用黏著劑4〇 2,較佳為塗在接鄰及介於 間隔層40 6之間,間隔層是分別對應第4D及4E圖之間隔元 件306,及第2A至2D圖之間隔元件116、166、216及266。 一 黏者劑402較佳為而溫環氧樹脂,如Ep0Xy Techno 1 ogy inc. oi Binerica,MA. USA 所提供商業用 ePO-TEK 353ND 。 請參照第5B圖,所製備之封裝層400黏著晶體基底
五、發明說明(12) 404 ’晶體基底404上典塑是具有呈少一金屬層且具有鎮嵌 如第2A及2C圖所示之光機械或光電裝置200。依據本發明 之一較佳實施例,在封裝層400及基底404之間定義一凹處 405 ° 基底404較佳為疊層的,如第5C圖所示,且蝕刻,如 第51)圖所示’以定義分割基底407。蝕刻後,基底407是藉 由一環氧樹鹿層408與一下封裝層410黏著,如第5E圖所 示。 如第5F圖所示,封裝層410及環氧樹脂層408藉由機械 刻痕以形成凹槽,之後於其上形成電性接觸片412,典型 是定義成凸塊41 4,如第5G圖所示,將此組合結構分割成 小方塊’如第5H圖所示’以產生複數個封装積體電路裝 置’如第51圖所示。 此處及整體說明書所舉發中,基底可為任何適用之晶 體基底可包括;6夕、銳酸鐘、组酸鐘或石英。 前述及下述之製造技術可以但並不必須包括以下任何 美國專利或專利申請案所揭露之技術,5, 71 6, 759 ; 5, 547 ,906 ; 5, 455, 455及08/952,019,於此亦作為參考資料。 凊參照第6A、6B、6C、6D、6E、6G、6Η、6ϊ、6J 及6 K圖’是舉例說明依據本發明之另一較佳實施例中顯示 在第2B圖之型式之一種製造使用於晶體基底基礎裝置之封 裝層之製造方法之步驟。 請參照第6 A圖’於一基底5 〇 〇之上鑲嵌複數個晶體基 底502,典型是形成派熱克斯玻璃(pyrex),於一晶體基底
5019-3609-PF.ptd 第15頁 4S6722 五、發明說明(13) 502之上形成襯墊504,於襯墊5 04之上藉由一導電連接器 506懸掛光電或機電裝置508,如一化學感應器、一微透鏡 陣列或一加速器,此裝置是對應第2B圖所示之裝置150。 ^ 請參照第6B圖,一封裝層510,典型之形式是如第4D 及4E圖所提供,使用黏著劑51 2,較佳為塗在接鄰及介於 間隔層51 6之間,間隔層是分別對應第4D及4E圖之間隔元 件306 ’及第2A至2D圖之間隔元件Π6、166、216及266。 黏著劑512較佳為高溫環氧樹脂,如EpoXy Technology j Inc· of Billerica,MA. TJSA 所提供商業用 EPO-TEK 353ND 。
請參照第6C圖,所製備之封裝層5i〇黏著晶體基底5〇2 ’ EB體基底502上典型是接鄰概塾504,如圖所示,一凹處 513是定義在封裝層51〇及基底5〇2之間,另一凹處514是定 義在基底500、基底502及依據本發明之一較佳實施例之機 電裝置508之間。 基底500及晶體基底502較佳為形成凹槽,如第6Ϊ)圖所 不’且蝕刻’如第6E圖所示’於晶體基底5〇2上定義容積 515。之後填充環氧樹脂51?,如第6?圖所示, ‘如第6G圖所示,基底500、環氧樹脂517及黏著劑512
藉由機械刻痕以形成凹槽5〇丨,之後於其上形成電性接觸 片519,如使周濺鍍法,如第6H圖所示,之後於其上凸塊 518,如第61圖所示,較佳為鎳金合金鍍層。將此組合結 ,刀割成小方塊,如第6J圖所示5以產生複數個封裝積費 電路裝置,如第6K圖所示。
466722 五 '發明説明(14) ~~-1 請參照第7A ' 7B、?c、7D、7E、7F及7G圖,是舉例說| 明依據本發明之另一較佳實施例中顯示在第2d圖之型式之i 一種製造使罔於晶體基底基礎裝置之封裝層之製造方法之 步驟。 請參照第f A圖,一封裝層6 0 0,典型之形式是如第4]) 及4E圖所提供,使用黏著劑6〇2,較佳為塗在接鄰及介於j 間隔層6 0 6之間,間隔層是分別對應第4D及钝圖之間隔元| 件306,及第2A至2D圖之間隔元件、166、216及266。 黏著劑602較佳為高溫環氧樹脂,如Ερ〇χγ Techn〇1〇gy
Inc· of Billerica,MA. USA 所提供商業用 epO-TEK 353ND 〇 p 請參照第7B圖,所製備之封裝層6〇{)黏著晶體基底δ〇4 | ’晶體基底604上典型是具有至少一金屬層且具有一上述 第2D圖之表面聲波(SAW)增殖層6〇9。如圖所示,一凹處 607是定義在封裝層600及依據本發明之—較佳實施例之表 面聲波增殖層6 0 9之間。 晶體基底604較佳為疊層的,如第7C圖所示,且部分 形成凹槽蝕刻入黏著劑602,如第7D圖所示,以定義分割 基底608。蝕刻後,於其上形成電性接觸片61〇,典型是定 義成凸塊614,如第7E圖所示,將此組合結構分割成小方、, 塊,如第7F圖所示,以產生複數個表面聲波裝置,如第7G 圖所示。 請參照第8A及8B圖,是舉例說明顯示以第“至51圖之 方法製造在第2A及2C圖之型式之晶體基底基礎裝置之封裝
466722 五、發明說明(15) 層所使用之設備。如第8A及8B圖所示,一傳統晶圓製造設 備680提供第5A圖之型式之完整晶圓681,於晶圓682之主 I 動面上接合保護層683,如第5A及5B圖所示,藉由接合設| 備685 ’較佳為具有闬以旋轉晶圓682、保護層683及環氧 樹脂之設備’以得到均勻分佈之環氧樹脂。 被接合晶圓686是薄的(第5C圖)在其非主動面藉由研 磨設债684研磨,如型式32BTGW使周1 2. 5A研磨劑687,此 ί 為Speedf ana Machine Co, Ltd. Of Engl and 所製造。 j 之後蝕刻晶圓(第5D圖)之非主動面藉,較佳為使用微| 影製程’如使周傳統之旋覆光阻,此為Hoechst所製造, 、 品名AZ 4562。使用一罩幕曝光機692經由罩幕691以曝光 光阻690,再於容器693内使用溶劑699蝕刻矽。 蝕刻後之晶圓1〇〇〇(第5E圖),藉由接合設備694將其 非主動面側與保護層6 8 6接合以形成雙接合晶圓三明治, 接合設備694基本上同於接合設備685。 | 刻痕設備6 9 5部分地切割第5 E圖之接合晶圓三明治成 為第5F圖所示之形態。 刻痕後之晶圓1002再於容器696内使用鉻酸鹽溶液698 揭 施行抗腐钱處理。如以下任何美國專利或專利申請案所 露之技術,2, 507, 956 ; 2, 851,385 及2, 796, 370,於此亦 作為參考資料。 導電層沉積設備700,使用真空沉積技術操作,如 Material Research Corporation of the USA 所製造之型 式9 03M濺鍍機,是用以在第5G圖所示之晶圓各晶粒一或多
5019-3609-PF.ptd 第18頁 466722 ' 五、發明說明(16) 個表面製造導電層。 第5 G圖所示之接觸片長帶之形態,較佳是使用傳統之 電沉積光阻701來施行,此可為Du Pont所製造,品名pr丨见t j ecoaz 5或為所製造’品名Eagle之光阻a光阻\ 是在一光阻溶液级成7 0 2中施加在晶圓7 G 7上光阻溶液纪 成702可為DuPont或為Shipley所製造。 光阻703較佳是使用紫外線曝光系統704來曝光β曝光 系統704可與曝光系統692完全相同,使用罩幕7〇5以定義 適當的#刻圖案。之後光阻是以顯影劑7 0 6來顯影。再於 铁刻容器710内使闬金屬蝕刻溶液施708來蝕刻,而形成第 I 5G圖所示之接觸片長帶之形態。 1 之後於第5G圖所不之曝光後接觸片長帶上鋼膜*較作 是使用無電電鍍設備712來施行,此可為Okuno of japan 所製造, 之後晶圓分割成(第5H圖)各別的預封襄積體電路,裝置 。較佳之切割刀具714是厚度4-12 mils之鑽石樹脂刀具。 所得到之晶粒如第51圖所示。 請參照第9 A及9 B圖,是舉例說明顯示以第g a至6 K圖之 方法製造在第2B圖之型式之晶體基底基礎裝置之封裝層所 使用之設備。如第9A及9B圖所示’一晶圓製造設備670提 v 供第6A圖之型式之完整晶圓781 5鑲嵌在一 Pyrex基底782 之上。於晶圓781之主動面上接合保護層783,如第6B及6C I 圖所示,藉甴接合設備784,較佳為具有用以旋轉晶圓 7 8 1、保護層7 8 3及環氧樹脂之設備’以得到均勻分佈之環 |
722 五、發明說明(17) ' ' 氧樹脂。 刻痕設備794部分地切割第6C圖之接合晶圓三明治793 成為第6D圖所示之形態。刻痕後之晶圓796再於容器1〇1〇 内使用矽蝕刻溶液798施行蝕刻。晶圓丨〇丨4上之蝕刻洞 1 〇 1 2是填充環氧樹脂1 〇 1 6,使用分配器丨〇 2 8以填充洞丨〇 i 2 ,而得到填充洞之環氧樹脂1 〇 2 0。晶圓1 〇 2 2使罔設備1 0 2 4 I 刻痕穿過環氧樹脂填充溝槽1〇2〇。 1 刻痕後之晶圓1 0 2 8較佳為再於容器〗〇 3 〇内使用鉻酸鹽 溶液1032施行抗腐餘處理。如以下任何美國專利或專利申 凊案所揭露之技術,2, 507, 956 ; 2, 851,385 及 2, 796,370 ,於此亦作為參考資料。 1 導電層沉積設備8 0 0,使罔真空沉積技術操作,如 |
Material Research Corporation of the USA 所製造之型 式9 03M濺鍍機,是用以在第6G圖所示之晶圓各晶粒一或多 個表面製造導電層。 第6E圖所示之接觸片長帶之形態,較佳是使用傳統之 電〉儿積光阻801來施行,此可為DuPont所製造,品名 Priraecoat,或為Shipley所製造,品名Eagle之光阻。光 阻是在一光阻溶液組成802中施加在晶圓803上,光阻溶液 組成802可為DuPont或為Shipley所製造。 、 光阻807較佳是使用紫外線曝光系統804來曝光,使用 罩幕805以定義適當的蝕刻圖案。之後光阻是以顯影劑806 來顯影。再於蝕刻容器8〗〇内使用金屬蝕刻溶液施8 〇 8來蝕 刻’而形成第1B圖所示之接觸片長帶之形態。
5019-3609-PF.ptd 第20頁 466722 五、發明說明(18) 之後於第6G圖所示之曝光後接觸片長帶上鍍膜,較佳 是使用無電電鍍設備S12來施行,此可為〇kunc)
所製造s之後晶圓分割成(第6 Η圖)各別的預封裝積體電路 裝置6較佳之切割刀具814是厚度4-12 aiis之鑽石樹脂刀 具。所付到之晶粒如第6 K圖所示。 請參照第10A及10B圖,是舉例說明顯示以第7A至“圖 之方法製造在第2D圖之型式之晶體基底基礎裝置之封裝層 所使周之設備。如第10 A及10B圖所示,一晶圓製造設備 880提供第7A圖之型式之完整晶圓881。於晶圓88ί之主動 面上接合仏護層883 ’如第7Α及7Β圖所示,藉由接合設襟 882 ’較佳為具有用以旋轉晶圓88ι、保護層883及環氧樹 脂之設備*以得到均勻分佈之環氧樹脂。 刻痕設備894部分地切割第7Ε圖之晶圓883成為第7F圖 所示之形態。 刻痕後之晶圓8 8 4較佳為再於容器8 9 6内使用鉻酸鹽溶 液8 9 8施行抗腐钱處理。如以下任何美國專利或專利申請 案所揭露之技術,2,507,956;2,851,385 及2,796,370, 於此亦作為參考資料。 導電層沉積設備900,使甩真空沉積技術操作,如
Material Research Corporation of the USA 所製造之型 式903M爽鍍機’是用以在第7G圖所示之晶圓各晶粒一或多 個表面製造導電層。 第7E圖所示之接觸片長帶之形態,較佳是使用傳統之 電沉積光阻901來施行,此可為Dupont所製造,品名
50i9.3609-PF.ptd 第21頁 466722 五、發明說明(19)
Primecoat,或為Shipley所製造,品名Eagle之光阻◊光 阻9 0 1是在一光阻溶液組成9 〇 2中施加在晶圓9 0 3上,光阻 溶液組成902可為DuPont或為Shi pl ey所製造。 光阻820較佳是使闬紫外線曝光系統9〇4來曝光,使用 罩幕9 0 5以定義適當的餘刻圖案。之後光阻是以顯影劑9 q 6 來顯影。再於蝕刻容器910内使用金屬蝕刻溶液施9〇8來餘 刻,而形成第1B圖所示之接觸片長帶之形態。 之後於第7G圖所示之曝光後接觸片長帶上鍍膜,叛 疋使兩無電電艘設備912來施行,此可為⑽训。ja ' jfeij >j. ^ 9* Π 之後晶圓91 3分割成(第5H圖)各別的預封裝積體電 裝置。較佳之切割刀具914是厚度4-12屺15之鑽石樹f 具。所得到之晶粒如第7G圖所示。 曰刀 然其並非用 脱離本發明 因此本發明 為準。 以限定 精專_ 之保幾
r 1 雖然本發明已以較佳實施例揭露如上, 本發明,任何熟習此技藝者,在不 和範圍内’當可作些許之更動與潤飾, 範圍當視後附之申請專利範圍所界定者
5019-3609-PF.ptd 第22頁
Claims (1)
- 4 6 6 7 2 2 六、 申請專利範圍 1. 一種晶體基底 一晶體基底,具 至少一封裝層, 底及該至 請專利範 在該晶體基 2. 如申 其中該至少 上。 3. 如申 其中該黏著 4. 如申 其中該晶體 5. 如中 其中該晶體 6. 如申 其中該至少 7. 如申 其申該至少 基礎褒置包括: f形成於其上之一微結構;以及 ,亡一黏著劑密封在該微結構上,且 一封裝層 請專利範 劑包括環 請專利範 基底包括 請專利範 基底包括 請專利範 一封裝層 請專利範 y 一封裝層之間定義至少一間隙。 ,第1項所述之晶體基底基礎裝置, 疋使用一黏著劑密封在該晶體基底 圍第2項所述之晶體基底基礎裝置, 氧樹脂。 圍第1項所述之晶體基底基礎裝置, 石夕=> 圍第ί項所述之晶體基底基礎裝置, 鈮酸鋰。 圍第1項所述之晶體基底基礎裝置, 是透明的。 圍第i項所述之晶體基底基礎裝置, 間隙包括複數個洞 8. 如申請專利範圍第1項所述之晶體基底基礎裝置, 其中該微結構包括一微機械結構。 j 9. 如申請專利範圍第1項所述之晶體基底基礎裝置, :: 其中該微結構包括一微電子結構。 i〇.如申請專利範圍第1項所述之晶體基底基礎裝置, 其中該微結構包括一微光電結構。 • 一種晶片尺度封裝晶體基底包括:5〇19-3609-PF.ptd 第23頁 ^66722 六、申請專利範圍 ----- 一基底,具有形成於其上之一微結構;以及 至少一晶片尺度封裝,密封在該微結構上,且在該微 結構及該至少一晶片尺度封裝之間定義至少一間隙。 12.如申請專利範圍第丨丨項所述之晶片尺度封裝晶體 基底,其中該至少一封裝是使用一黏著劑密封在該基底 上。 13, .如申請專利範圍第1 2項所述之晶 片 尺 度 封 裝 晶 體 基底 1 其中該黏考劑包括環氧樹脂6 14, .如申請專利範圍第1 1項所述之晶 片 尺 度 封 裝 晶 體 基底 , 其中該基底包括硬β 15. 如申請專利範圍第11項所述之晶 片 尺 度 封 裝 晶 體 基底 其中該基底包括鈮酸鋰s 16 .如申請專利範圍第丨1項所述之晶 片 尺 度 封 裝 晶 體 基底 3 其中該至少一封裝是至少部分透明的t > 17 .如申請專利範圍第1 1項所述之晶 片 尺 度 封 裝 晶 體 基底 5 其中該至少一間隙包括複數個洞< ) 18 .如申請專利範圍第11項所述之晶 片 尺 度 封 裝 晶 體 基底 9 其中該微結構包括一微機械結構< > 1 9.如申請專利範圍第11項所述之晶 片 尺 度 封 裝 晶 體 基底 7 其中該微結構包括一微電子結構1 0 20 *如申請專利範圍第11項所述之晶 片 尺 度 封 裝 晶 體 基底 其中該微結構包括一微光電結構1 0 21 .一種晶體基底基礎裝置之製造方 法 包括 * 於一基底上提供一微結構;以及六、申請專利範固 在該微結構上膠黏密封s 及該炱少一封裝層々 葛^ 封裝層,且在該微結構 22.如^#/〜間足義至少1隙。 之製造方法,盆中誃5 w/一 * 、|述〜晶體基底基礎裝置 該晶艏基底上。、"一夕一纣裝層是使雨一黏著劑密封在 23··^®^* τ吻專利範圍第21 之製造方法丨·^疋日日體基底基礎裝置 -24 士,,、中該黏著劑包括環氧樹脂。 之制一造方1甲請專利範圍第21項所述之晶鍾基底基礎裝置 之恭· 去,其中該晶體基底包括矽。 I . 2 5.如申請專利範圍第21項所述之晶體基底基礎裝置 之製造方法’其中該晶體基底包括鈮酸鋰。 26.如申請專利範圍第21項所述之晶體基底基礎裝置 之製造方法’其中該至少一封裝層是透明的。 2?‘如申請專利範圍第21項所述之晶體基底基礎裝置 之製造方法,其中該至少·一間隙包括複數個洞e 28·如申請專利範圍第2i項所述之晶體基底基礎裝置 之製造方法,其中該微結構包括一微機械結構。 29.如申請專利範圍第21頊所述之晶體基底基礎裝置 之製造方法,其中該微結構包栝〆微電子結構。 30·如申請專利範圍第21項所述之晶體基底基礎裝置 之製造方法其中該微結構包栝z微光電結構。 a β窗筮1谪所述之晶體基底基礎裝置, 31 ·如申請專利範圍第1項尸 其中該晶體基底包栝钽酸鋰。 ^ w ^阁筮1道所述之晶體基底基礎裝置, 3 2.如申請專利範圍第1項尸715019^3609-PF.ptd 第25頁 466722 六、申請專利範圍 其中該微結構包括表面聲波裝置。 3 3.如申請專利範圍第11項所述之晶片尺度封裝晶體 基底,其中該晶體基底包括石英。 3 4.如申請專利範圍第21項所述之晶體基底基礎裝置 之製造方法,其中該晶體基底包括钽酸鋰。 3 5.如申請專利範圍第21項所述之晶體基底基礎裝置 之製造方法,其中該微結構包括表面聲波裝置。 36. 如申請專利範圍第1項所述之晶體基底基礎裝置, 其中該晶體基底包括石英。 37. 如申請專利範圍第21項所述之晶體基底基礎裝置 之製造方法,其中該晶體基底包括石英。5019-3609-PF.ptd 第26頁
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-
1999
- 1999-12-10 IL IL13345399A patent/IL133453A0/xx unknown
-
2000
- 2000-11-26 AU AU17272/01A patent/AU1727201A/en not_active Abandoned
- 2000-11-26 CA CA002394458A patent/CA2394458A1/en not_active Abandoned
- 2000-11-26 WO PCT/IL2000/000786 patent/WO2001043181A1/en active Application Filing
- 2000-11-26 JP JP2001543771A patent/JP5160710B2/ja not_active Expired - Lifetime
- 2000-11-26 KR KR1020027007284A patent/KR100725107B1/ko active IP Right Grant
- 2000-11-26 CN CNB00816990XA patent/CN1222024C/zh not_active Expired - Lifetime
- 2000-11-26 EP EP00979896.8A patent/EP1247293B1/en not_active Expired - Lifetime
- 2000-11-28 TW TW089125196A patent/TW466722B/zh not_active IP Right Cessation
- 2000-11-29 US US09/725,166 patent/US6777767B2/en not_active Expired - Lifetime
-
2001
- 2001-08-07 US US09/922,770 patent/US7144745B2/en not_active Expired - Lifetime
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI467747B (zh) * | 2006-11-02 | 2015-01-01 | Toppan Printing Co Ltd | 固態攝影裝置及其製造方法 |
US7796337B2 (en) | 2007-03-13 | 2010-09-14 | Visera Technologies Company Limited | Optical microstructure plate and fabrication mold thereof |
US8716844B2 (en) | 2011-03-10 | 2014-05-06 | Yu-Ting Huang | Chip package and method for forming the same |
US9337097B2 (en) | 2011-03-10 | 2016-05-10 | Xintec Inc. | Chip package and method for forming the same |
TWI628723B (zh) * | 2015-03-10 | 2018-07-01 | 精材科技股份有限公司 | 一種晶片尺寸等級的感測晶片封裝體及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5160710B2 (ja) | 2013-03-13 |
KR100725107B1 (ko) | 2007-06-04 |
EP1247293A1 (en) | 2002-10-09 |
JP2003516634A (ja) | 2003-05-13 |
IL133453A0 (en) | 2001-04-30 |
US7144745B2 (en) | 2006-12-05 |
US20020027296A1 (en) | 2002-03-07 |
US20010018236A1 (en) | 2001-08-30 |
CN1409869A (zh) | 2003-04-09 |
US6777767B2 (en) | 2004-08-17 |
EP1247293A4 (en) | 2006-02-15 |
EP1247293B1 (en) | 2013-06-26 |
US20070040257A1 (en) | 2007-02-22 |
CA2394458A1 (en) | 2001-06-14 |
CN1222024C (zh) | 2005-10-05 |
US7939918B2 (en) | 2011-05-10 |
WO2001043181A1 (en) | 2001-06-14 |
KR20020074158A (ko) | 2002-09-28 |
AU1727201A (en) | 2001-06-18 |
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