TW451536B - Nitride semiconductor device - Google Patents

Nitride semiconductor device Download PDF

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TW451536B
TW451536B TW089111067A TW89111067A TW451536B TW 451536 B TW451536 B TW 451536B TW 089111067 A TW089111067 A TW 089111067A TW 89111067 A TW89111067 A TW 89111067A TW 451536 B TW451536 B TW 451536B
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nitride semiconductor
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light
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TW089111067A
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Koji Tanizawa
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Nichia Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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Description

451536
體層中之η型雜質濃度以下。 11·根據申請專利範圍第1項之氮化物半導體元件，其 上述活性層所含有之η型雜質濃度乃從接近^型氮 物半導體層側愈遠離愈減少。 12·根據申請專利範圍第丨項之氮化物半導體元件，其中 上述活性層中所含有之η型雜質，含該n型雜質 的η型雜質濃度為5xl〇16〜2xl〇18/cm3。 曰 13·根據申請專利範圍第！ 2項之氮化物半導體元件，其 中上，活性層之障壁層中所含有的n型雜質濃度為^ xl〇i6 〜2X10 丨 8/cm3。 裴 14·根據申請專利範圍第丨2項之氮化物半導體元件，其 中上述活性層之量子井層中所含有的η型雜質濃度為 5xl〇16〜2xl〇，cm3。 訂 ι 15·根據申請專利範圍第9項之氮化物半導體元件，盆中 上述活性層之障壁層中所含有的η型雜質濃度為、5χ 10〜2xl〇 8/cm3，另外，量子井層中所含有之η 型雜質濃度，為5χ10“〜2xl〇18/cm3 ,比上述活性層 的障壁層中所含有之n型雜質濃度還少。 16·根據申請專利範圍第9項之氮化物半導體元件，盆中 上述活性層之障壁層中所含有的n型雜質濃度為5χ 10〜2xl〇 /cm3’另外，量子井層中所含有的η 型雜貝〉辰度為5 X 1 〇 i6/cm3以下，且比活性層之障壁 層中所含有的η型雜質濃度還少。 17·根據巾晴專利範圍第2項之氮化物半導體元件，其乃
六、申請專利範圍 高輸出用之氮化物半導體元件，其t上述活性層中 接近η型氮化物半導體層側含有η型雜質之障壁層或 量子井層，乃比接近ρ型氮化物半導體層側不含:型 雜質之障壁層或量子井層的膜厚還大。 18·根據申請專利範圍第2項之氮化物半導體元件，其乃 低驅動電壓用之氮化物半導體元件，其中上述活;性 層t接近η型氮化物半導體層側含有^型雜質之障壁 層或量子井層，乃比接近ρ型氮化物半導體層側不含 η型雜質之障壁層或量子井層的膜厚還小。 19· 一種發光元件，係於η型氮化物半導體層與ρ型氮化 物半導體層之間，具有一積層量子井層與障壁層而 成之活性層； 9 上述活性層之量子井層乃由InxGal-xN (但， 0<χ<1)所構成的，其發光譜峯波長為45〇〜54〇 nm，其特徵在於： 上述活性層之積層總數為9層以上1 3層以下，從 接近η型氮化物半導體層側算起3層以下之層中，選 自Si、Ge、Sri所構成之群中的η型雜質乃含有5χ 10 丨6〜2xl〇18/cm3。 20.根據申請專利範圍第1 9項之發光元件，其乃高輸出 用之發光元件，其中上述活性層中接近η型氮化物半 導體層側含有η型雜質之障壁層或量子井層，乃比接 近ρ型氮化物半導體層側不含η型雜質之障壁層或量 子井層的膜厚還大。 O:\64\64680-930430 DOC 5 -4 - 45
請專利範圍第I9項之發光元件，其乃低驅動 $發光元件’其中上述活性層中接近^型氮化物半 η侧含有η型雜質之障壁層或量子井層，乃比接 I Ρ聖氮化物半導體層側不含η型雜質之障壁層或量 子井層的膜厚還小。 22·根據申凊專利範圍第1 9項之半導體元件，其中η型 雜·質為S i。 23·根據申凊專利範圍第1 9項之氮化物發光元件，其中 這/舌丨生層之量子井層乃由InxGal-xN (但， 〇<X<1)所構成，其發光譜峯波長為在490〜510 nm 之區域。 24·根據申請專利範圍第2 3項之發光元件，其中上述活 性層之障壁層乃由InyGal-yN (但，〇<y<l，y<x) 所構成。
25·根據申請專利範圍第1 9項之發光元件，其中上述活 性層乃由 InxGal-xN (但，0<x<l)/InyGal-yN (但’ 0Sy<l，y<x)之多重量子井層所構成的，且 形成於η型多層膜上。 26·根據申請專利範圍第2 5項之發光元件，其中形成上 述多層膜乃作為一由不摻雜η型雜質之inzGal-ZN (仁 ’ 〇<z<l)/GaN積層或 AlwGal-wN/GaN (但， 〇<w<l)積層所構成之緩衝超格子層。 27·根據申請專利範圍第2 6項之發光元件，其中上述緩 衝超格子之GaN層的厚度為70 A以下，且活性層之 -5 O:\64\64680-930430.DOC 5 本紙張尺度適用中國國家標準(CNS)A4規格（210X297公釐） A8 B8 C8 08 451536 六、申請專利範圍 障壁層之厚度為7〇人以上。 28.根據申請專利範圍第2 5項之發光元件，其中上述多 層膜乃含有η型雜質，且形成為覆蓋層，此覆蓋層乃 匕匕上述活性層之量子井層的能帶隙還大之I n z G a 1 · zN (但，〇<2：<i，z<y)層或 AlwGal-wN (但， 0<W<1)層與GaN層之積層所構成的。 29·根據申請專利範圍第2 8項之發光元件，其中上述活 性層及η型覆蓋層中所含有的η型雜質為S i，活性層 之積層中所含有的Si濃度為5xl〇16〜2xl018/cm3， 且η型覆蓋層之積層中所含有的si濃度為5χ 1 〇 17 / c m3以上，比活性層之s i濃度還多。 -6- O:\64\64680-930430 DOC 5 本紙張尺度適州中國國家標準(CNS) A4規格(210 X 297公釐）
TW089111067A 1999-06-07 2000-06-07 Nitride semiconductor device TW451536B (en)

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US (4) US6657234B1 (zh)
EP (3) EP1189289B1 (zh)
JP (1) JP3719047B2 (zh)
KR (1) KR100574738B1 (zh)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607575B (zh) * 2011-07-25 2017-12-01 日立化成股份有限公司 太陽電池基板、太陽電池基板的製造方法、太陽電池元件及太陽電池

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3719047B2 (ja) * 1999-06-07 2005-11-24 日亜化学工業株式会社 窒化物半導体素子
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
USRE46589E1 (en) 2001-01-16 2017-10-24 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6800876B2 (en) 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6906352B2 (en) * 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
CN1252883C (zh) * 2001-04-12 2006-04-19 日亚化学工业株式会社 氮化镓系列化合物半导体元件
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
EP1401027B1 (en) * 2001-05-30 2009-04-08 Cree, Inc. Group III nitride based light emitting diode with a superlattice structure
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
MY139533A (en) * 2001-11-05 2009-10-30 Nichia Corp Nitride semiconductor device
JP3946541B2 (ja) * 2002-02-25 2007-07-18 三菱電線工業株式会社 発光装置およびそれを用いた照明装置、ならびに該発光装置の製造方法と設計方法
JP2004128444A (ja) * 2002-07-31 2004-04-22 Shin Etsu Handotai Co Ltd 発光素子及びそれを用いた照明装置
KR100583163B1 (ko) * 2002-08-19 2006-05-23 엘지이노텍 주식회사 질화물 반도체 및 그 제조방법
US7039078B2 (en) 2002-09-17 2006-05-02 Nippon Telegraph And Telephone Corporation Semiconductor optical modulator and laser with optical modulator
TW561637B (en) * 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
KR100525545B1 (ko) * 2003-06-25 2005-10-31 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100476567B1 (ko) 2003-09-26 2005-03-17 삼성전기주식회사 질화물 반도체 소자
US7897108B1 (en) * 2003-10-03 2011-03-01 The Research Foundation Of State University Of New York Sensor and method of sensing having an energy source and detector on the same side of a sensor substance
KR100641989B1 (ko) * 2003-10-15 2006-11-02 엘지이노텍 주식회사 질화물 반도체 발광소자
JP2005244207A (ja) * 2004-01-30 2005-09-08 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
KR100925059B1 (ko) * 2004-02-28 2009-11-03 삼성전기주식회사 백색 발광소자 및 그 제조방법
JP2005294813A (ja) * 2004-03-08 2005-10-20 Showa Denko Kk ｐｎ接合型ＩＩＩ族窒化物半導体発光素子
JP2005340789A (ja) * 2004-04-28 2005-12-08 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP2005340762A (ja) * 2004-04-28 2005-12-08 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP2006013473A (ja) * 2004-05-24 2006-01-12 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
KR100670531B1 (ko) * 2004-08-26 2007-01-16 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100611491B1 (ko) 2004-08-26 2006-08-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
CN100336235C (zh) * 2004-09-06 2007-09-05 璨圆光电股份有限公司 氮化镓系发光二极管结构
TWI239668B (en) * 2004-10-21 2005-09-11 Formosa Epitaxy Inc Structure of gallium-nitride based (GaN-based) light-emitting diode with high luminance
CN1320711C (zh) * 2004-11-09 2007-06-06 中国科学院半导体研究所 用于波长转换的半导体光学放大器的制备方法
US7730143B1 (en) 2004-12-01 2010-06-01 Aol Inc. Prohibiting mobile forwarding
US8060566B2 (en) 2004-12-01 2011-11-15 Aol Inc. Automatically enabling the forwarding of instant messages
US9002949B2 (en) 2004-12-01 2015-04-07 Google Inc. Automatically enabling the forwarding of instant messages
US20060267043A1 (en) 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
KR100565894B1 (ko) * 2005-07-06 2006-03-31 (주)룩셀런트 3족 질화물 반도체 발광소자의 활성층을 제어하는 방법
KR100691444B1 (ko) * 2005-11-19 2007-03-09 삼성전기주식회사 질화물 반도체 발광소자
JP2007235107A (ja) * 2006-02-02 2007-09-13 Mitsubishi Electric Corp 半導体発光素子
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
KR101234783B1 (ko) * 2006-07-13 2013-02-20 삼성전자주식회사 질화물계 반도체 발광소자 및 그 제조방법
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
KR100826422B1 (ko) * 2006-11-21 2008-04-29 삼성전기주식회사 질화물 반도체 소자
JP2007123927A (ja) * 2006-12-18 2007-05-17 Mitsubishi Cable Ind Ltd 発光装置およびそれを用いた照明装置
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
JP2008258503A (ja) * 2007-04-06 2008-10-23 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
KR101065070B1 (ko) 2007-04-24 2011-09-15 에피스타 코포레이션 발광 소자
KR100875444B1 (ko) * 2007-06-25 2008-12-23 서울옵토디바이스주식회사 발광 다이오드 및 그 제조방법
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
DE102007046027A1 (de) * 2007-09-26 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
CN100544038C (zh) * 2007-12-10 2009-09-23 厦门大学 无应变InAlGaN/GaN PIN光电探测器
EP2198494B1 (en) * 2007-12-28 2019-10-02 Avago Technologies International Sales Pte. Limited Waveguide device having delta doped active region
KR100957750B1 (ko) * 2008-08-12 2010-05-13 우리엘에스티 주식회사 발광 소자
TWI389344B (zh) 2008-08-25 2013-03-11 Epistar Corp 光電元件
CN101667612B (zh) * 2008-09-05 2011-11-02 晶元光电股份有限公司 光电元件
KR101018217B1 (ko) 2008-10-01 2011-02-28 삼성엘이디 주식회사 질화물 반도체 소자
JP2009071337A (ja) * 2008-12-29 2009-04-02 Mitsubishi Chemicals Corp 発光装置およびそれを用いた照明装置
KR101549811B1 (ko) * 2009-01-09 2015-09-04 삼성전자주식회사 질화물 반도체 발광소자
CN101488550B (zh) * 2009-02-27 2010-10-13 上海蓝光科技有限公司 高In组分多InGaN/GaN量子阱结构的LED的制造方法
JP5381439B2 (ja) * 2009-07-15 2014-01-08 住友電気工業株式会社 Ｉｉｉ族窒化物半導体光素子
KR100993085B1 (ko) 2009-12-07 2010-11-08 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 라이트 유닛
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
WO2012035135A1 (de) * 2010-09-19 2012-03-22 Osram Opto Semiconductors Gmbh Halbleiterchip und verfahren zu dessen herstellung
WO2012040013A2 (en) 2010-09-22 2012-03-29 First Solar, Inc. Photovoltaic device containing an n-type dopant source
JP5996846B2 (ja) 2011-06-30 2016-09-21 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP6005346B2 (ja) 2011-08-12 2016-10-12 シャープ株式会社 窒化物半導体発光素子およびその製造方法
US8669585B1 (en) 2011-09-03 2014-03-11 Toshiba Techno Center Inc. LED that has bounding silicon-doped regions on either side of a strain release layer
JP5911132B2 (ja) * 2012-02-27 2016-04-27 株式会社ナノマテリアル研究所 半導体デバイス
JP5853779B2 (ja) * 2012-03-14 2016-02-09 日亜化学工業株式会社 窒化物半導体素子
JP2014003121A (ja) * 2012-06-18 2014-01-09 Sharp Corp 窒化物半導体発光素子
KR20140019635A (ko) * 2012-08-06 2014-02-17 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
CN102945901B (zh) * 2012-10-30 2015-04-15 施科特光电材料(昆山)有限公司 一种大功率氮化物led结构及其制造方法
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
CN104409587B (zh) * 2014-10-22 2016-12-28 太原理工大学 一种InGaN基蓝绿光发光二极管外延结构及生长方法
DE102015100029A1 (de) * 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6649693B2 (ja) 2015-04-17 2020-02-19 学校法人 名城大学 窒化物半導体発光素子及びその製造方法
CN104821352B (zh) * 2015-05-14 2018-09-25 上海世湖材料科技有限公司 一种InGaN/GaN量子阱界面中断生长结构及方法
JP2016219547A (ja) * 2015-05-18 2016-12-22 ローム株式会社 半導体発光素子
JP6387978B2 (ja) * 2016-02-09 2018-09-12 日亜化学工業株式会社 窒化物半導体発光素子
JP6188866B2 (ja) * 2016-05-19 2017-08-30 シャープ株式会社 窒化物半導体発光素子の製造方法
CN110494987B (zh) * 2017-04-24 2022-03-01 苏州晶湛半导体有限公司 一种半导体结构和制备半导体结构的方法
JP6686172B2 (ja) 2017-11-22 2020-04-22 創光科学株式会社 窒化物半導体発光素子
JP6729644B2 (ja) * 2018-08-08 2020-07-22 日亜化学工業株式会社 窒化物半導体発光素子
JP6968122B2 (ja) * 2019-06-06 2021-11-17 日機装株式会社 窒化物半導体発光素子
JP7260807B2 (ja) * 2020-12-24 2023-04-19 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197784A (ja) 1982-05-12 1983-11-17 Nec Corp 発光ダイオ−ド
JP3290672B2 (ja) 1990-08-20 2002-06-10 株式会社東芝 半導体発光ダイオード
JPH0330486A (ja) 1989-06-28 1991-02-08 Nec Corp 多重量子井戸発光素子
JP2564024B2 (ja) 1990-07-09 1996-12-18 シャープ株式会社 化合物半導体発光素子
JPH04218994A (ja) 1990-08-31 1992-08-10 Toshiba Corp 半導体発光装置
JP3105981B2 (ja) 1992-01-28 2000-11-06 シャープ株式会社 半導体発光素子
JPH05291618A (ja) 1992-04-08 1993-11-05 Asahi Chem Ind Co Ltd 発光素子
JPH065916A (ja) 1992-06-16 1994-01-14 Omron Corp 半導体発光素子
JP3243768B2 (ja) 1992-07-06 2002-01-07 日本電信電話株式会社 半導体発光素子
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JPH06268315A (ja) 1993-03-12 1994-09-22 Fujitsu Ltd 半導体レーザ
JPH0773146B2 (ja) 1993-03-30 1995-08-02 日本電気株式会社 超格子構造体及び半導体発光素子
JPH07193333A (ja) 1993-12-27 1995-07-28 Mitsubishi Chem Corp 半導体発光素子
JPH07326824A (ja) 1994-05-30 1995-12-12 Sony Corp 発光素子
EP0772247B1 (en) 1994-07-21 2004-09-15 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
US5557115A (en) 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
JPH08111558A (ja) 1994-10-07 1996-04-30 Hitachi Ltd 半導体レーザ素子
JP3228453B2 (ja) 1994-11-10 2001-11-12 日本電信電話株式会社 半導体量子井戸構造を有する光半導体装置
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US6900465B2 (en) 1994-12-02 2005-05-31 Nichia Corporation Nitride semiconductor light-emitting device
JP2735057B2 (ja) 1994-12-22 1998-04-02 日亜化学工業株式会社 窒化物半導体発光素子
EP0732754B1 (en) * 1995-03-17 2007-10-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
JPH0936423A (ja) 1995-07-24 1997-02-07 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH09232666A (ja) 1996-02-20 1997-09-05 Hitachi Ltd 半導体レーザ及び並列伝送用光送信モジュール
JP3653843B2 (ja) 1996-02-20 2005-06-02 株式会社日立製作所 半導体レーザ素子
JP3753793B2 (ja) 1996-06-14 2006-03-08 豊田合成株式会社 ３族窒化物化合物半導体発光素子
JPH1012969A (ja) 1996-06-19 1998-01-16 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH1022524A (ja) 1996-07-02 1998-01-23 Omron Corp 半導体発光素子
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
JP3700283B2 (ja) 1996-10-02 2005-09-28 昭和電工株式会社 窒化物化合物半導体素子
US6542526B1 (en) 1996-10-30 2003-04-01 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
JPH10163523A (ja) 1996-12-03 1998-06-19 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法および発光素子
US6121634A (en) * 1997-02-21 2000-09-19 Kabushiki Kaisha Toshiba Nitride semiconductor light emitting device and its manufacturing method
JP3713118B2 (ja) * 1997-03-04 2005-11-02 ローム株式会社 半導体発光素子の製法
SG63757A1 (en) 1997-03-12 1999-03-30 Hewlett Packard Co Adding impurities to improve the efficiency of allngan quantum well led's
CA2298491C (en) * 1997-07-25 2009-10-06 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6555403B1 (en) 1997-07-30 2003-04-29 Fujitsu Limited Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same
JP4787205B2 (ja) 1997-07-30 2011-10-05 富士通株式会社 半導体レーザの製造方法
JPH1168158A (ja) * 1997-08-20 1999-03-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
JPH11135838A (ja) 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JP3147063B2 (ja) 1997-11-28 2001-03-19 ダイキン工業株式会社 スクロール型流体機械
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
JP3719047B2 (ja) * 1999-06-07 2005-11-24 日亜化学工業株式会社 窒化物半導体素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607575B (zh) * 2011-07-25 2017-12-01 日立化成股份有限公司 太陽電池基板、太陽電池基板的製造方法、太陽電池元件及太陽電池

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