TW451536B - Nitride semiconductor device - Google Patents

Nitride semiconductor device Download PDF

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TW451536B
TW451536B TW089111067A TW89111067A TW451536B TW 451536 B TW451536 B TW 451536B TW 089111067 A TW089111067 A TW 089111067A TW 89111067 A TW89111067 A TW 89111067A TW 451536 B TW451536 B TW 451536B
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nitride semiconductor
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light
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TW089111067A
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Koji Tanizawa
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Nichia Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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Description

451536
體層中之η型雜質濃度以下。 11·根據申請專利範圍第1項之氮化物半導體元件，其 上述活性層所含有之η型雜質濃度乃從接近^型氮 物半導體層側愈遠離愈減少。 12·根據申請專利範圍第丨項之氮化物半導體元件，其中 上述活性層中所含有之η型雜質，含該n型雜質 的η型雜質濃度為5xl〇16〜2xl〇18/cm3。 曰 13·根據申請專利範圍第！ 2項之氮化物半導體元件，其 中上，活性層之障壁層中所含有的n型雜質濃度為^ xl〇i6 〜2X10 丨 8/cm3。 裴 14·根據申請專利範圍第丨2項之氮化物半導體元件，其 中上述活性層之量子井層中所含有的η型雜質濃度為 5xl〇16〜2xl〇，cm3。 訂 ι 15·根據申請專利範圍第9項之氮化物半導體元件，盆中 上述活性層之障壁層中所含有的η型雜質濃度為、5χ 10〜2xl〇 8/cm3，另外，量子井層中所含有之η 型雜質濃度，為5χ10“〜2xl〇18/cm3 ,比上述活性層 的障壁層中所含有之n型雜質濃度還少。 16·根據申請專利範圍第9項之氮化物半導體元件，盆中 上述活性層之障壁層中所含有的n型雜質濃度為5χ 10〜2xl〇 /cm3’另外，量子井層中所含有的η 型雜貝〉辰度為5 X 1 〇 i6/cm3以下，且比活性層之障壁 層中所含有的η型雜質濃度還少。 17·根據巾晴專利範圍第2項之氮化物半導體元件，其乃
六、申請專利範圍 高輸出用之氮化物半導體元件，其t上述活性層中 接近η型氮化物半導體層側含有η型雜質之障壁層或 量子井層，乃比接近ρ型氮化物半導體層側不含:型 雜質之障壁層或量子井層的膜厚還大。 18·根據申請專利範圍第2項之氮化物半導體元件，其乃 低驅動電壓用之氮化物半導體元件，其中上述活;性 層t接近η型氮化物半導體層側含有^型雜質之障壁 層或量子井層，乃比接近ρ型氮化物半導體層側不含 η型雜質之障壁層或量子井層的膜厚還小。 19· 一種發光元件，係於η型氮化物半導體層與ρ型氮化 物半導體層之間，具有一積層量子井層與障壁層而 成之活性層； 9 上述活性層之量子井層乃由InxGal-xN (但， 0<χ<1)所構成的，其發光譜峯波長為45〇〜54〇 nm，其特徵在於： 上述活性層之積層總數為9層以上1 3層以下，從 接近η型氮化物半導體層側算起3層以下之層中，選 自Si、Ge、Sri所構成之群中的η型雜質乃含有5χ 10 丨6〜2xl〇18/cm3。 20.根據申請專利範圍第1 9項之發光元件，其乃高輸出 用之發光元件，其中上述活性層中接近η型氮化物半 導體層側含有η型雜質之障壁層或量子井層，乃比接 近ρ型氮化物半導體層側不含η型雜質之障壁層或量 子井層的膜厚還大。 O:\64\64680-930430 DOC 5 -4 - 45
請專利範圍第I9項之發光元件，其乃低驅動 $發光元件’其中上述活性層中接近^型氮化物半 η侧含有η型雜質之障壁層或量子井層，乃比接 I Ρ聖氮化物半導體層側不含η型雜質之障壁層或量 子井層的膜厚還小。 22·根據申凊專利範圍第1 9項之半導體元件，其中η型 雜·質為S i。 23·根據申凊專利範圍第1 9項之氮化物發光元件，其中 這/舌丨生層之量子井層乃由InxGal-xN (但， 〇<X<1)所構成，其發光譜峯波長為在490〜510 nm 之區域。 24·根據申請專利範圍第2 3項之發光元件，其中上述活 性層之障壁層乃由InyGal-yN (但，〇<y<l，y<x) 所構成。
25·根據申請專利範圍第1 9項之發光元件，其中上述活 性層乃由 InxGal-xN (但，0<x<l)/InyGal-yN (但’ 0Sy<l，y<x)之多重量子井層所構成的，且 形成於η型多層膜上。 26·根據申請專利範圍第2 5項之發光元件，其中形成上 述多層膜乃作為一由不摻雜η型雜質之inzGal-ZN (仁 ’ 〇<z<l)/GaN積層或 AlwGal-wN/GaN (但， 〇<w<l)積層所構成之緩衝超格子層。 27·根據申請專利範圍第2 6項之發光元件，其中上述緩 衝超格子之GaN層的厚度為70 A以下，且活性層之 -5 O:\64\64680-930430.DOC 5 本紙張尺度適用中國國家標準(CNS)A4規格（210X297公釐） A8 B8 C8 08 451536 六、申請專利範圍 障壁層之厚度為7〇人以上。 28.根據申請專利範圍第2 5項之發光元件，其中上述多 層膜乃含有η型雜質，且形成為覆蓋層，此覆蓋層乃 匕匕上述活性層之量子井層的能帶隙還大之I n z G a 1 · zN (但，〇<2：<i，z<y)層或 AlwGal-wN (但， 0<W<1)層與GaN層之積層所構成的。 29·根據申請專利範圍第2 8項之發光元件，其中上述活 性層及η型覆蓋層中所含有的η型雜質為S i，活性層 之積層中所含有的Si濃度為5xl〇16〜2xl018/cm3， 且η型覆蓋層之積層中所含有的si濃度為5χ 1 〇 17 / c m3以上，比活性層之s i濃度還多。 -6- O:\64\64680-930430 DOC 5 本紙張尺度適州中國國家標準(CNS) A4規格(210 X 297公釐）
TW089111067A 1999-06-07 2000-06-07 Nitride semiconductor device TW451536B (en)

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US (4) US6657234B1 (zh)
EP (3) EP2309556B1 (zh)
JP (1) JP3719047B2 (zh)
KR (1) KR100574738B1 (zh)
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