TW437103B - Nitride semicondcutor device - Google Patents

Abstract

To substantially utilize the characteristics of the active layer of multiple quantum well structure to intensify the luminous output thereof thereby for expanding the application range of various products of the nitride semiconductor device, the present invention provides a nitride semiconductor device which comprises an active layer, the active layer is interposed between an n-region having a plurality of nitride semiconductor films and a p-region having a plurality of nitride semiconductor films, and a multi-film layer stacked with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.

Description

437103 A7 B7 V. Description of the Invention (Field of the Invention The present invention relates to a light emitting diode (LED), a laser diode (LD), a solar cell, a light sensor and other light emitting elements and light receiving elements, or Nitride semiconductor devices used in electronic devices such as transistors and high-power devices (such as' InxAlyGai.x_yN, 〇Sx, 〇sy, X ten yd) »Back of the invention: The nitride semiconductor is a high-brightness cyan LED The materials of pure green LEDs are practically used as various light sources for full-color LED devices, traffic lights, image scanning light sources, etc. The structure of such LED elements is basically as follows: a quartz substrate is sequentially stacked on a quartz substrate. The formed buffer θ, a side contact layer formed of GaN doped with Si impurities, an InGaN with a single quantum well structure (SQW, Single-Quantum-Well), or a multiple quantum rhenium structure with InGaN (MQW, Multi- Quantum-Well) has an activity of «, a p-side cover formed by Mg-doped AiGaN ^ ~ a p-side contact layer formed by Mg-doped GaN; it emits light below 20 mA 450nm Tone LED with 5mW The two-quantum emission rate is 9.1%, and the ED system with an emission wavelength of 520nm has the good characteristics of 5mW and an external quantum efficiency of 6.3%. In the above-mentioned nitride semiconductor light-emitting element, a well layer formed of InGaN is used. Single quantum well structure or double heterostructure of active layer with multiple quantum well structure. In addition, 'for gaseous semiconductor light-emitting devices, due to the weight of (CNiS) Al (2 (Please read the precautions on the back before (Fill in this page) ---- Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs; f Ministry of Intellectual Property, ¾ printed by the Consumers ’Cooperatives of the Property Bureau 4371〇3 A7 ______B7 _ 5. Description of the invention () The structure of the child is one The structure formed by a plurality of small-sized bonds can efficiently emit light with a small current. Therefore, the structure can improve device characteristics such as an increase in light output compared to the military-quantum well structure. The LED device of the active layer of the quantum well structure is disclosed in, for example, Japanese Patent Application Laid-Open No. 10- 1 3 55 14 in which a nitride semiconductor device has Good luminous efficiency and luminosity, the nitride semiconductor device includes a luminescence structure consisting of at least a barrier layer formed of unearned impurities \ GaN and a multiple quantum well formed of undoped InGaN: And a cover layer that is wider than the light-emitting layer and has a wider interlayer and a key gap. However, if the active layer is made into a multi-chapter scorpion whose last name, A ^ ^ 々I is more important than the well structure, it will make The vertical series resistance increases, which in turn increases the Vf (forward voltage) of an LED sub-iA-, and the component.

The technology that can reduce Vf, 彳 & Λ 丨 』u H m 3 is, for example, disclosed in JP-A-9-298341, and its description is based on a laser, which is a kind of laser. Element

The system uses the p-side wells "ΛL", which are located above the active layer, as the U.S. friend layer and the contact layer as a superlattice layer containing InAlGaN. Continuing Aunt Ren. Through ... Wang Wang, Department of Technology, wants to use p-type nitrogen

The compound semiconductor layer has a superlattice structure with an Indium-containing odd-and-so-missive conductor layer, which increases the carrier concentration of the P layer and reduces the initial value of the laser device. However, as a matter of fact, for a nitride semiconductor composed of InA1GaN "quaternary mixed crystal, its crystal, τ &

As for the nitride semiconductor of In, it is very difficult for you to become a P-type. Therefore, in fact, if you want to make an LED element based on this, it is really τη-from the enterprise dagger or LD element difficult. According to the above, although we look forward to the active layer of the multi-tongue good political structure xi Xi Zhongzijing structure -------- ^ --------- ^ (Please read the back of the first Fill out the form f}

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs v A37103 A7 ___B7 _ V. Description of the invention () Effectively increase the luminous output, but in reality, the expected possibilities cannot be fully realized. In addition, with regard to LD devices, the inventors of this case have fabricated a nitride semiconductor substrate with an active layer on a nitride semiconductor substrate. The semiconductor semiconductor laser device has achieved 10,000 hours of continuous vibration at room temperature for the first time in the world. The above 'is published in the ICNS'97 pre-draft collection, 0 < ^ 〇56 『27-31, 1997, p444-446, and Jpn.J.Appl.Phys.Vol.36 (1997) p p. L 1 5 6 8 -1 5 7 1 'P ar 12, N 〇 1 2 A, 1 De embember 1 9 9 7. In order to use the LED element in a light source for lighting or an outdoor display device that is exposed to direct sunlight, it is necessary to lower the Vf of the element and increase the luminous efficiency. In addition, as for the LD element, in order to use it as a light source for the optical head, it is necessary to further reduce the initial value to extend the life, so further improvement is required. Recently, as for a light-emitting element using a nitride semiconductor, as disclosed in Japanese Patent Application Laid-Open No. 8-9 7468, a p-type contact layer is formed by using InGaN having a smaller gap energy than 0aN instead of the conventional use of GaN. In other words, the barrier between the p-type contact layer and the p-side electrode can be reduced by using InGaN that has a smaller bond gap energy than that of GaN. Ohmic contact. However, since it is difficult to grow an InGaN-based film with few defects and good crystallinity, it is difficult to obtain an Ohm contact having a low contact resistance as expected. In addition, since the crystallinity of the grown InGaN layer is disordered, there is a problem that the contact resistance is unstable. Therefore, for a conventional nitride semiconductor device having a p-type contact layer formed of inGaN, __________- ___ 6th t B f. ^ 1 -r (> M〇 > Τ? Ί ^ 7Γ; '™ ------------------------------------------ nnnnn I— El I 1 »Rl II-ininn nn n I (Please read the notes on the back before filling in this page) A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Operating voltage and high output characteristics. Because of this, if a LED element is formed using a p-type contact layer formed of InGaN, its forward voltage vf at 20mA can only be reduced to a maximum of 3.4V ~ Between 3.8V, at the same time, there is still a problem of disorderly distribution. In addition, for a device formed of a nitride semiconductor, its structure will be weaker than the static electricity carried by the human body! 〇 〇V voltage adjustment, that is, degradation may occur, so it must be used very carefully. Therefore, in order to improve the reliability of monolithic semiconductor devices', it is necessary to further increase their electrostatic withstand voltage. Object of the invention and sincerity: In view of the above disadvantages, the object of the present invention is mainly to improve the output of nitride-rich conductor elements such as LEDs and LDs, and at the same time reduce their initial values and thereby improve the luminous efficiency of the elements. Increasing luminous efficiency also refers to further improving the efficiency of other electronic components using nitride semiconductors such as light-receiving elements. In addition, 'another object of the present invention is to use an active layer with a multiple quantum ytterbium structure and fully utilize its characteristics, To further improve the luminous output, at the same time, the scope of the nitride semiconductor device applicable to various corresponding products is expanded. Furthermore, another object of the present invention is to provide a method for reducing the contact resistance between the P-side electrode and the P-type contact layer. And it can be stable, lower operating voltage to obtain higher output nitride semiconductor devices. -------- ^ --------- (Please read the following: -i Please fill in this page again): ΛΙ Λ37 i Ο 3 Α7 R7 V. Description of the invention () Another object of the present invention is to provide a light-emitting diode which can improve the luminous output and has a good static voltage resistance. Compound semiconductor element. The first nitride semiconductor element system of the present invention can reduce the initial value by the following structure, and can improve the luminous efficiency. That is, 'the first nitride semiconductor element system of the present invention has a An active layer, wherein the active layer is between an n-side region containing a plurality of nitride-rich conductor layers and a p-side region containing a plurality of nitride semiconductor layers, and is characterized in that at least A nitride semiconductor layer is an η-side multilayer film layer, and the η 恻 multilayer film layer is composed of a first nitride semiconductor film containing 1η and a second nitrogen which is different in composition from the first nitride semiconductor film. A compound semiconductor film is deposited; and at least one of the first nitride semiconductor rhenium and the second nitride semiconductor film has a film thickness of 100 angstroms or less. In the first nitride semiconductor element of the present invention, it is preferable that both the first nitride semiconductor film and the second nitride semiconductor film are present! Below 00 Angstroms' and preferably below 70 Angstroms, more preferably below 50 Angstroms. By reducing the film thickness as described above, the multilayer film layer can have a superlattice structure, and the crystallinity of the multilayer film layer can be improved, so that the output can be improved. In addition, the 'active layer system may be a single quantum well structure having a nitride semiconductor containing I η, preferably a well layer formed of InGaN, or a multi-baryon structure. In addition, in the first nitride semiconductor device of the present invention, the first! The vapor semiconductor film system can be composed of InxGai xN (〇 < x <丨); and the second semiconductor vapor film can be composed of InyGaiiNfOfyd, y <x;), and {Please read the precautions on the back before filling (Pages) -------- Order --------- ^ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ37 ^ 〇3

At ___ Β7 V. Description of the invention () It is best to be GaN. Furthermore, in the first nitride semiconductor device of the present invention, at least one of the first nitride semiconductor film or the second nitride semiconductor film has a film thickness different from that of the first nitride semiconductor film or the second nitride semiconductor film in close proximity. The thickness of the nitride semiconductor film. In other words, when a multilayer film layer is formed by stacking a plurality of first nitride semiconductor films and second nitride semiconductor films, two layers of the second nitride semiconductor film (first nitride semiconductor film) are sandwiched. The thickness of each nitride-rich conductor film (the second nitride-rich conductor film) is different. Furthermore, in the first nitride semiconductor element of the present invention, at least one of the first nitride semiconductor film or the second nitride semiconductor film has a group III element composition different from that of the adjacent nitride semiconductor film. Or the same In group element of the second nitride semiconductor film. That is, when the multilayer film layer is formed by stacking a plurality of layers of the first nitride semiconductor film and the second nitride semiconductor film, two layers of the second nitride semiconductor film (the third nitride semiconductor film) are sandwiched. The composition ratios of the group III elements of the first nitride semiconductor film (second nitride semiconductor film) are different. Furthermore, in the first nitride semiconductor device of the present invention, although the η-inverted multilayer mold layer can be provided separately from the active layer, it is preferable to further increase the output by adjoining the active layer. Furthermore, in the i-th nitride semiconductor semiconductor device of the present invention, the i-th nitride semiconductor film and the second vapor semiconductor film may be impurities # 4. Here, the so-called unsupported impurities means intentionally The impurity-free state is not undoped in the present invention, for example, impurities that are diffused and mixed by the adjacent nitride semiconductor layer. In addition, the impurities that are mixed in due to diffusion will cause the 9th page ______ 37 public --------- lit. · ------ t ^ --------- ^ f Please read the sound on the back? Please fill in this page to reprint this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 437103 A7 ---------- B7______ 5. Description of the invention () Impurities in the layer produce a gradient. Furthermore, in the first nitride semiconductor device of the present invention, the first! Either the nitrogen semiconductor film or the second nitride semiconductor film may be doped with an 11-type impurity. This is the so-called modulation doping, which can increase the output by modulation doping. The n-type impurity may be a Group 1v ′ or Group VI element such as Si, Ge, Sn, s, etc., and it is preferable to use si or Gn as the n-type impurity. Furthermore, in the first nitride semiconductor device of the present invention, both the first nitride semiconductor film and the second nitride-rich conductor film may be doped with an 11-type impurity. When doped with an n-type impurity, its impurity concentration is preferably adjusted to be less than SxlO ^ cm3 'and more preferably is adjusted to less than ixl02Vcm3. If it exceeds 5 X 1 0-1 / cm3 ', the crystallinity of the nitride semiconductor layer will be deteriorated, and the output will be reduced instead. This is also the same when the dopant is modulated. Furthermore, in the first nitride semiconductor device of the present invention, a nitride semiconductor layer in the p-side region is a P-side multilayer film layer, and the p-side multilayer film layer is made of a third nitride containing A1. The semiconductor film and a fourth nitride semiconductor film having a composition different from that of the third nitride semiconductor film are deposited; and at least one of the third nitride semiconductor film and the fourth nitride semiconductor film has a film thickness. It is below 100 Angstroms. In the present invention, the film thickness of both the third nitride semiconductor film and the fourth nitride semiconductor film is preferably 100 angstroms or less, and more preferably 70 angstroms or less. Fortunately below 50 Angstroms. By reducing the film thickness as described above, the multilayer film layer can have a superlattice structure, and the crystallinity of the multilayer film layer can be improved, so that the output can be improved. Page 10 paper won; s a ------------- I, t · ------- order ----— I —ί · ^ (Please read the first Note: Please fill in this page again) 03 03 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () In the nitride semiconductor element of the present invention, the third nitride semiconductor film can be used by AlaGai -aN (0 < aSl): The fourth nitride semiconductor film system may be composed of InbGai.bN (0Sb < 1, b < a), and the fourth nitride semiconductor film is preferably GaN. In the first nitride semiconductor device of the present invention, at least one of the third nitride semiconductor film or the fourth nitride semiconductor film has a thickness different from that of the third nitride semiconductor film or the fourth nitrogen that is close to each other. The thickness of the compound semiconductor film. In other words, when the multilayer film layer is formed by stacking a plurality of third nitride semiconductor films and fourth nitride semiconductor films, two layers of the third nitride semiconductor film (fourth nitride semiconductor film) are sandwiched. The thicknesses of the fourth nitride semiconductor films (third nitride semiconductor films) are different. In the first nitride semiconductor device of the present invention, the third nitride semiconductor film or the fourth nitride semiconductor film has at least one of the group 111 halogen elements having a composition different from that of the adjacent third nitride semiconductor film. Or the same group III element composition of the fourth nitride semiconductor film. That is, when the multilayer film layer is formed by stacking a plurality of third nitride semiconductor films and fourth nitride semiconductor films, two layers of the third nitride semiconductor film (fourth nitride semiconductor film) are sandwiched. The composition ratios of the group 1II elements of the fourth nitride semiconductor films (third nitride semiconductor films) are different. Furthermore, in the first nitride semiconductor device of the present invention, the p-side multilayer film layer may be provided separately from the active layer, but it is preferable that it is adjacent to the active layer in order to further increase the output. Furthermore, in the first nitride semiconductor device of the present invention, the third nitride semiconductor film and the fourth nitride semiconductor film may be undoped. When page 11-.η.; ^ Ί!] ^! · Rg ------------------- (Please read the notes on the back before filling in this 3- ------ ^ --------- Transfer 437103 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () When the P-side multilayer film is undoped, its The thickness of the film is preferably 0 m or less. When the thickness of the film is thicker than 0 -1 and m, it is difficult to perform positive hole injection in the active layer, which will reduce the luminous output. Moreover, the non-doped The definition of the impurity is the same as that of the η-side multilayer film. Furthermore, in the first nitride semiconductor device of the present invention, either one of the third nitride semiconductor film or the fourth nitride semiconductor film is doped with P. Type impurities. Output can be improved by modulating doping. Ρ type impurities can be group VIII elements of the periodic table, such as Mg, Zn 'Ca' Be, cd, etc., it is best to use Mg, Be as the p-type impurity. Furthermore, in the first nitride semiconductor device of the present invention, the third nitride semiconductor film and the fourth nitride semiconductor are both doped with a p-type impurity. When # P-type impurity is present 'The impurity concentration is best adjusted at lx l〇: 2 / cm3 or less, and more preferably, it is adjusted to 5x] 〇2〇 / cm3. If it exceeds lxl 0 22 / cm] ', the crystallinity of the nitride semiconductor layer will be deteriorated, and the output will be reduced instead. This is also the same when the dopant is modulated. The second to fifth nitride semiconductor elements of the present invention can improve the nitride semiconductor element having an active layer with a multiple quantum well structure by the following structure. "Light emission output" and expanding the applicable range of application products of nitride semiconductor devices. That is, "the second nitride semiconductor device of the present invention has an" active layer ", wherein the active layer is interposed between a plurality of nitride semiconductor layers. The n-side region and a p-side region containing a plurality of nitride semiconductor layers are characterized in that at least one nitride semiconductor layer in the n-side region is a first multilayer film layer on the n-side, and the n-side first 1 Multi-layer film system is at least page 12 ~ _ __ paper, wave scale suitable claw aTST:?! ¥ ^ 1, ¥ ^ factory) — ^ ------------ ----- ------------- ^ -------- Order --------- line (please read the notes on the back before filling Page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4371 03 A7 _____ B7_____ V. Description of the invention () Deposited by 2 kinds of nitride semiconductors doped with n-type impurities of different concentrations and each having different bond gap energy At least one nitride semiconductor layer in the p-side region is a P-side multilayer film cover layer, and the p-side multilayer film cover layer is respectively connected with P-type impurities of different concentrations and each has a different bond taste The third and fourth nitride semiconductor films of energy are deposited; and the active layer is a multiple quantum well structure formed by InaGai.aN (0 ^ a < 1). However, the third nitride semiconductor device of the present invention has an active layer, wherein the active layer is interposed between an η 恻 region containing a plurality of nitride semiconductor layers and a p-side region containing a plurality of nitride semiconductor layers. It is characterized in that at least one nitride semiconductor system in the n-side region is an η-th multi-layer film layer, and the η-side first multi-layer film system is at least doped with n-type impurities of different concentrations, respectively. And two nitride semiconductor films having the same composition are stacked; at least one nitride semiconductor layer in the ρ-side region is a P-side multilayer film cover layer, and the ρ-side multilayer film cover layer is doped separately. 3rd and 4th nitride semiconductor films with different concentrations of ρ-type impurities and each having a different bond gap energy are deposited; and the active layer is formed of InaGa 〖aN (〇Sa < l) Of multiple quantum wells. In addition, in the second and third nitride semiconductor devices of the present invention, P-type impurities having different degrees of contact are respectively connected to the third nitride semiconductor film and the fourth nitride semiconductor film. Or doped with P-type impurities at the same concentration. In addition, the fourth nitride semiconductor device of the present invention has an active layer, wherein the active layer is interposed between a nitride semiconductor layer and a plurality of nitride semiconductor layers. --------- * ------ 1 Order-丨 II 丨 丨-丨 (Please read the precautions on the back before filling out this page) 4371〇3 B7 Consumers ’Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs Printing 5. Description of the invention (between the n-side region and a p-side region containing a plurality of nitride semiconductor layers' is characterized in that at least one nitride semiconductor layer in the side region is the n-side first multilayer film layer, The first multi-layer film layer on the η side is formed by at least doping impurities of different concentrations and having the same composition: stacked semiconductor semiconductor films; at least one of the semiconductor semiconductor layers in the PZ region Is a P-side single film cover layer, and the ρ-side single film cover layer is formed of AlbGai containing P-type impurities, such as); and, the active layer is-formed of InaGauaN? A < 1) Multiple quantum well structure β In addition, in the third and fourth gaseous semiconductors of the present invention, Element, a brother of the 11-based multilayer film 1 may be incorporated in each of different two kinds of nitride η-type impurity concentration of the formed GaN semiconductor piece goods are piled touch. In addition, the fifth nitride semiconductor device according to the present invention has an active layer, wherein the active layer is interposed between an n-side region containing a plurality of nitride semiconductor layers and a n-side region containing a plurality of nitride semiconductor layers. It is characterized by at least one nitride hemiisotope layer in the η-side region as the η-side first multilayer film layer, and the η-side first multilayer film layer is at least composed of η-type impurities of different concentrations. And at least one nitride semiconductor layer with different plutonium energy is deposited; at least one nitride semiconductor layer in the ρ-side region is a P-side single-film cover layer, and the P-single-film cover layer is composed of The P-type impurity is formed by AlbGai bN (0 plus); and the legal layer is a multiple quantum pseudo structure formed from InaGai aN ((^ a < 1). Furthermore, in the invention 2 ~ In the 5th nitride semiconductor device, ------------ install -------- order --------- I (confusion read the unintentional matters on the back before (Fill in this page), ί · ν

V. Description of the invention (4371 〇3 Imprinted by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs * 'There is a _ η side multilayer film layer' between the η 恻 first multilayer film layer and the active layer, where the η 恻 second multilayer film The layer system is made up of a nitride semiconductor film containing & and a second nitride semiconductor film having a composition different from that of the nitride nitride half :: 1. 5 In the nitride semiconductor device, a contact layer containing η: η side may be provided between the first multilayer film layer on the Xi side and the substrate side. In addition, in the second to fifth nitride semiconductor devices of the present invention, The η side contact layer may be formed on an undoped QaN layer. W η is also formed in the second to fifth nitride semiconductor devices of the present invention, and the undoped GaN layer may be formed on A buffer layer formed by low-temperature growth can be formed on the p-side multilayer film 41 or on the P-side single cover layer—a ρ-side GaN contact layer containing Mg < p-type Z-quality In other words, the second to fifth nitride semiconductor devices of the present invention use an n-type The η-side first multilayer film formed by two or more different nitride semiconductor films; and the ρ-side multilayer film acoustic cover layer formed by using -1 p-side-down and 3rd and 4th nitride semiconductor films' Or a P-side single film cover layer 'containing p-type impurities and formed of AlbGai_bN (〇Sby) to sandwich a light-emitting layer having a multi-layer quantum well structure can improve the light-emitting efficiency. As mentioned above, by A combination of a plurality of nitride semiconductor layers having a specific composition or structure can effectively perform the performance of an active layer of a multilayer quantum well structure. 151'R Ρϋ (^ NS) A] Mi-C210 X · Δ) 7 i >)% ^ -------- Order --------- line (please read the unintentional matter on the back before filling this page) 4371 0 3 Λ7 .------______ 5. Description of the invention () In the second to fifth nitride semiconductor elements of the present invention, 'if the 0-side first multilayer film layer and the active layer are provided with an n-side second multilayer film layer, wherein the n-side first 2 The multilayer film layer is composed of a first gaseous semiconductor film containing Ιη and a second nitride half having a composition different from that of the first nitride semiconductor film. When the deposited film formed, can be made to further enhance the efficiency of gas while also make Vf lowered. In addition, in the second to fifth nitride semiconductor devices of the present invention, if an η-side contact layer containing n-type impurities is provided between the η-side first multilayer film layer and the substrate side, it may be further advanced. Increasing the light emission output 'can also decrease Vf. Furthermore, in the second to fifth nitride semiconductor devices of the present invention, if the n-side contact layer is formed on an undoped GaN layer, an undoped material with good crystallinity can be formed. 〇aN layer. Therefore, the crystallinity of the n-side contact layer that can be used to form the n-electrode becomes better. At the same time, the crystallinity of other nitride semiconductor layers such as the active layer formed on the n-side contact layer also changes. OK, so the light output can be further improved. Further, in the second to fifth nitride semiconductor devices of the present invention, the 'what's undoped GaN layer system is formed on a buffer layer formed of GadA1 | dM0 < cUi) grown at a low temperature, Then the crystallinity of the undoped layer can be improved, so that the luminous output can be further improved. In addition, if it is formed on the P-side multilayer film cover layer or the P-side single cover layer—the one containing Mg When the p-side GaN contact layer of the p-type impurity, good p-type conductivity can be obtained. Therefore, a good ohmic contact can be made between the P electrode formed on the p-side GaN contact layer and the p 恻 GaN contact layer. , So _________________ page 16, Bu 1¾ factory, ----- 1—- — ---------------------—_____ -v ..,. . E Hr,.,) — (Please read the precautions on the back before filling out this page> -------- Order --------- Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4371 03 A7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () can further improve the luminous output. In addition, the sixth nitride semiconductor device of the present invention uses a The type contact layer has a superlattice structure, so as to form a p-type contact layer with less defects and a higher degree of crystallinity; that is, the sixth nitride semiconductor element system of the present invention provides a lower operating voltage to achieve A nitride semiconductor device having a high and stable output. That is, the sixth nitride semiconductor device of the present invention has an active layer, wherein the active layer is located on the η side composed of a plurality of nitride semiconductor layers. Between a region and a p-side region containing a p-type contact layer and having a plurality of nitride semiconductor layers, wherein the p-type contact layer has a first and a second nitride semiconductor film having different compositions The superlattice structure is sequentially stacked, and at least one of the first nitride-rich conductor films in the ⑨2㈤ nitride semiconductor is contained. According to this, the " electrode and p-type contact layer can be reduced. The contact resistance between the two electrodes can be-stable, low operating voltage to achieve-higher output. In addition, in the sixth nitride semiconductor device of the present invention, the third nitride semiconductor film and the second nitride A composition gradient layer that continuously changes the composition of the first nitride semiconductor substrate to the composition of the first nitride semiconductor film may be formed between the semiconductor films. Also, the sixth nitride semiconductor device of the present invention may be formed. In the compound semiconductor film and the second nitride semi-transistor film system, In may be included in the first nitride semiconductor film, and ln and 1 in the first nitride semiconductor film contain a larger amount than the second g semiconductor film. In [η 本 有 香 有 量 1 ， the resistance of the P-type contact layer is further reduced. Ρ 土 喝 网 臂 -------------- Page 17: "" ------------ ^ -------- Order --------- line (Please read the precautions on the back before filling this page) 〇3 AT B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

In the sixth nitride semiconductor device of the present invention, when one of the first nitride semiconductor and the second nitride semiconductor film is a layer containing In, the first nitride semiconductor film system It can be composed of InxGai.xN; and the second nitride semiconductor film can be composed of AlyGahNiOSyd). Furthermore, in the sixth nitride semiconductor device of the present invention, one of the i-th vapor semiconductor film and the second nitride semiconductor film may be doped with a P-type impurity and the other is not doped with a p-type impurity. c In addition, in the sixth nitride semiconductor device of the present invention, when both the first and second nitride semiconductor films have a dopant, one of them is doped with I; the degree is lxl019 / cm3 ~ 5xl021 / cm3 p-type impurity; the other side is doped at a concentration of lxl0! S / cm3 ~ 5xl0 [9 / cm3, and its access amount is higher than the former nitride semiconductor The film is also doped with less p-type impurities. In the sixth nitride semiconductor device of the present invention, the first nitride semiconductor film system may be formed on the outermost surface, and the first nitride semiconductor film system formed on the outermost surface is adjacent to a p-side electrode. In this case, the p-type impurity of the t-th nitride semiconductor film is preferably larger than the P-type impurity of the second nitride semiconductor film. Further, in the sixth nitride semiconductor device of the present invention, a P-type cover layer made of a nitride semiconductor containing 八 may be provided between the active layer and the P-type contact layer. With regard to the sixth nitride semiconductor device of the present invention, the P-type cladding layer has a layer composed of A1 × 〇3ι · χΝ (〇 < χ < 1), and-on page 18 (please first Read the notes on the back and fill in this page again} Assembling ---- ordering --------- line Ή- 4371 03 Λ7 B7 V. Description of the invention (InyGaUyN (0 < structure. 1) The layers formed by each other As described above, the superlattice stacked alternately, because the sixth messenger willow in the present invention includes a p-type contact layer, and the p-type contact layer has a first component having a different composition. The superlattice structure in which the first and second nitride semiconductor films are sequentially stacked, and 'at least one of the first halide semiconductor films contains In in the two nitride semiconductor films, so that a defect may be formed. The p-type contact layer with less and good crystallinity can reduce the contact resistance between the p-type contact layer and the p-side electrode, so that a stable and low operating voltage can be used to achieve a higher output. 8Nitride semiconductor devices can be used to enhance the nitride of an active layer with a multiple quantum well structure by the following structure The light-emitting output of the semiconductor element and the application range of the application product of the nitride semiconductor element are enlarged. That is, the seventh nitride semiconductor element of the present invention has an active layer, wherein the active layer is interposed between a plurality of nitrides. Between the n-side region of the semiconductor layer and a p-side region containing a plurality of nitride semiconductor layers, it is characterized in that at least one nitride semiconductor layer in the n-side region is the n-th! Multilayer film layer, and The η-side i-th multilayer film layer consists of an underlayer formed of an undoped nitride semiconductor film, an intermediate layer formed of a nitride semiconductor film doped with η = impurity, and an unmade impurity : ... the upper layer formed by the bio-semiconductor film waits until "layers are piled up on the shore and the layer film: at least one nitride semiconductor layer in the area is a P-side multilayer film covering the rabbit layer, and the? -Side multilayer film covering layer consists of (Change into different professional gentry 11 ---------- -------- Order ----- I --- f Please read the notes on the back before filling this page) Wisdom of the Ministry of Economic Affairs Printed by the Employees 'Cooperatives of the Property Bureau Page 19 First, _____ (-1 ^ 2s' ;: Λ ίί > 4371 〇3 A7 B7 V. Explanation of the invention () P-type impurities' and 3rd and 4th argon-rich conductor films with different bond gap energies are stacked: again, the activity The layer system is a multiple quantum well structure formed of IbGahNtOQO. In addition, in the seventh gaseous semiconductor device of the present invention, the third nitride semiconductor film may be included in the fourth semiconductor semiconductor film without the impurity impurity. The P-type impurity concentration in the third nitride semiconductor film or the P-type impurity concentration in the third nitride semiconductor film may be the same as the ^ impurity concentration in the fourth nitride semiconductor film. In addition, the eighth nitride semiconductor device of the present invention It has a wide activity, wherein the active layer is between an n-side region containing a plurality of gaseous semiconductor layers and a p-side region containing a plurality of nitride semiconductor layers. It is characterized in that: At least one nitride semiconductor layer is the η-side first multilayer film layer, and the η-side] multilayer film layer is formed by an underlayer formed of an undoped nitride semiconductor film, n-type impurity < nitride semiconductor The intermediate layer formed by the film and an upper layer formed by an undoped nitride semiconductor film are sequentially stacked. At least one nitride-rich conductor layer in the P-side region is p 恻. A single film covers a wide area, and the P-side film covering layer is formed of AlbGai-bN (t ^ bU) containing P-type impurities; and the active layer is formed of InaGau aN (〇Sa <: I) The resulting multiple quantum plutonium structure. Furthermore, in the seventh and eighth nitride semiconductor devices of the present invention, the i-th multilayer film layer on the far side is formed with a film thickness of 100-1000 Angstroms, and the nitrogen is not replaced by impurities. The lower layer formed by a compound semiconductor film, a film thickness of ~ 1000 Angstrom 'and formed by a nitride semiconductor film doped with n-type impurities. V. Milk (2i〇y V97 (Please read the precautions on the back first) (Fill in this page again.) Install -------- Order ------ Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Page 20 4371 03 Α7 Β7 Printed by the Consumers’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2. Description of the invention (Intermediate layer 25 to ⑽G Angstroms, and composed of an upper layer formed by a vaporized semiconductor film without changing impurities. In the seventh and eighth nitride semiconductor devices of the present invention, the n-side first Between the multilayer film and the active layer, a -n-side second multilayer film layer may be further provided, wherein the n-side second multilayer film layer is composed of an In-containing! Nitride semiconductor film, and the composition is different from the No.! The second nitride semiconductor film is deposited on the nitride semiconductor film. It is also referred to as the seventh and eighth nitride of the present invention. In the semiconductor device, an n-side contact layer containing an n-type impurity may be provided between the n-side first multilayer film layer and the substrate. In the seventh and eighth nitride semiconductor devices of the present invention, the n-side contact is provided. It is preferable that the layer system is formed on an undoped hafnium layer. In addition, in the seventh and eighth nitride semiconductor devices of the present invention, the undoped GaN layer system can be formed on-grown at a low temperature. It is called a p-side GaN contact layer containing Mg "p-type impurities on the buffer layer formed by -Sonaquin, and on the p-side multilayer film cover layer or P-side single-cover layer. Also said 7The seventh and eighth gaseous semiconductor devices of the present invention use a one-bit & n 恻 region, an intermediate layer doped with ^ -type impurities, a lower layer of unexchanged impurities, and an upper layer of undoped impurities. The η side is formed! The multi-layer film is wide; and a multi-layer mold cover layer formed by the third and fourth nitride semiconductor films is used, or it contains p-type impurities and is made of AUGahNCO ^ l) The formed single-layer coating layer on the mouth side is used to hold the active layer with a multi-tangent quantum well structure. Can improve luminous efficiency, the first 21 肓 (Ο;!: ·;) / ,; ri〇 ^ c public I nn. ^ 1 n t. · Nnnnn —1-OJ (^ 1 I— n II. I n I ( (Please read the precautions on the back before filling this page) 4371 03 Λ7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (c: n: s) 5. Description of the invention At the same time, a light emitting output with good static voltage resistance is obtained. Nitride semiconductor element. Furthermore, since the present invention is a combination in which the film thickness of each layer constituting the first multilayer film layer on the η side is set in a specific range, the light emission output can be improved, and the electrostatic withstand voltage can be improved. In the present invention, the so-called undoped substance means that the impurity is intentionally not doped in the state of “quality”, even if the impurity diffused from the adjacent nitride semiconductor layer is generated by the raw material or the device. In the present invention, β is also an un-doped layer. However, the impurity system incorporated by diffusion causes a gradient of impurities in the layer. 'Bu? In particular, in combination with an active layer having a multi-weight pre-well structure, it may be another nitride semiconductor layer described below. In the present invention, if the first multilayer film layer on the η side and the active layer are formed by a first nitride semiconductor film containing In and a composition product, the second nitrogen of the compound semiconductor film is seen. When the stacking ratio of the compound semiconductor film is 5 11 down to the second multilayer film layer, the luminous efficiency can be further improved and the forward voltage (hereinafter referred to as Vf) can be reduced, thereby improving the luminous efficiency. Furthermore, in the present invention, if the η 恻 first multilayer film layer is provided between the substrate and the substrate—Bengu; when the η-side contact layer of the n-type impurity is D, the luminous efficiency can be improved, and Vf can also be increased. Ding Jiang. Also r ', in the present invention,' if the η-side contact layer is formed on an undoped GaN wafer, Ni '〇aN, an un-doped material with good crystallinity can be obtained.' Crystals that can be used to form the η-side contact layer of the η electrode 页 Page 22 (: · M0 公 楚) -------------- Equipment -------- Order --- ------ Line 1 Please read the Zhuyin on the back first? Please fill in this page again for the items > Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs, Co-operative Society :, 4371 03 A7 * ----------- B7___ V. The description of the invention () becomes better, and at the same time, due to the formation The crystallinity of other nitride semiconductor layers such as the active layer of the n 恻 contact layer will also be improved, so that the light emission output can be further improved. In addition, in the present invention, if the undoped QaN layer is formed on a buffer layer formed by a low-temperature-growth θ3 (18 11.1 (1 > 1 (0 < (1)), The crystallinity of the undoped GaN layer can be improved, and at the same time, the crystallinity of the n-side contact layer can be improved. Therefore, the light-emitting output can be further improved. Or, when a p-side GaN contact layer containing a p-type impurity containing Mg is formed on the p-side single cladding layer, good p-type conductivity can be obtained, so the p-electrode formed on the p-side GaN contact layer can be obtained. There is a good ohmic contact with the p-side οaN contact layer ', so the light emission output can be further improved. In addition, in the ninth to eleventh nitride semiconductor devices of the present invention, the n-side region and the p-side region are different. With multi-layered film layers, the combination of the multi-layered film layers in the ^ side region and the multi-layered film layers in the ρ-side region, or an asymmetric relationship between the number of layers 1 can increase the light output and the electrostatic withstand voltage, and can reduce ν f , So that it can expand the scope of application of various application products. That is, the ninth of the present invention The semiconductor device has an active layer, wherein the active layer is interposed between an n-side region containing a plurality of nitride semiconductor layers and a p 恻 region containing a plurality of nitride semiconductor layers, characterized in that the η At least one nitride semiconductor layer in the side region is an η-type multilayer film formed by stacking a plurality of nitride semiconductor films; at least one nitride semiconductor layer in the p-side region is a layer composed of a plurality of nitrogen P-type multilayer film formed by compound semiconductor film; and page 23 --------- I--¾ -------- Order. Ίι-i-< Please read first The back of the page; please fill in this page for further information.) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs • 4371 03 A7 • ---------- B7__ 5. Description of the invention () The composition system is different from the composition constituting the p-type multilayer film layer. In addition, the tenth nitride semiconductor device system of the present invention has an active layer, wherein the active layer system is between-containing a plurality of nitride semiconductor layers I n side Regions and—gates containing P-side regions of multiple halide semiconductor layers It is characterized in that at least one nitride semiconductor layer in the n-side region is known as-an n-type multilayer film layer formed by stacking a plurality of nitride semiconductor films: at least one nitride semiconductor layer in the p-side region Is a p-type multilayer film layer formed by stacking a plurality of nitride semiconductor films; and the number of stacked layers of the nitride semiconductor film constituting the n-type multilayer film layer is different from that of the nitrogen constituting the p-type multilayer film layer The number of stacked layers of a compound semiconductor film. In addition, the "u-th nitride semiconductor device of the present invention has an active layer", wherein the active layer is located between an n-side region containing a plurality of nitride semiconductor layers and a layer containing a plurality of nitrogen Between the p-side regions of the compound semiconductor layer is characterized in that at least one nitride semiconductor layer in the n-side region is an n-type multilayer film formed by stacking a plurality of nitride semiconductor films: the p-side At least one nitride semiconductor layer in the region is a p-type multilayer film layer formed by stacking a plurality of nitride semiconductor films; and the composition system constituting the n-type multilayer film layer is different from the structure. The ρ-type multilayer film composition and the number of layers constituting the stack-based product of η-type multilayer film of the nitride semiconductor film different from the number of stacking layers constituting the multilayer film of Ρ type nitride semiconductor film. In the ninth to eleventh nitride semiconductor devices of the present invention, the number of stacked layers of the nitride semiconductor film constituting the p-type multilayer film layer is less than that constituting the η page 24 I 1-···-one ... . »» —.— 4_ ·.-, ≫, ******-III--,-丨 I |-I ·, ·---Jiaqi: 芈 （CNS) Ai 格格 （; 仙Χ29Γ Male: V) --- IIIJIIII- equipment. III II 1 I order -------- II {Please read the business matters on the back before filling this page) Λ7 B7 437103------- ^ -Description of the five 'invention: The number of stacked layers of the nitride semiconductor film of the () type multilayer film layer is preferably 3. In the ninth to eleventh nitride semiconductor devices of the present invention, the n-type multilayer film layer contains A1zGai .zN (0: iz < l), and inpGabu 1 ^ (0 <? <; 1) are preferred; and the P-type multilayer film system contains AlxGa | .xN (0 < x < l), And better. In the ninth to eleventh nitride semiconductor devices of the present invention, it is preferable that the p-type multilayer film layer and / or the n-type multilayer film layer are formed by modulating doping. That is, since the ninth to ninth nitride semiconductor elements of the present invention form a ^ -type multilayer film layer and a P-type multilayer film layer with different compositions and / or number of layers, respectively, according to n-type and p-type, according to The active layer is sandwiched, and the layer structure near the active layer in the device structure is specified. Therefore, a nitride semiconductor device having a good electrostatic withstand voltage can be provided, which improves the luminous output and decreases vf '. Although the active layer of the quantum well structure hides the ability to enhance the luminous output ', it is difficult for conventional devices to fully explore the possibility of the quantum plutonium structure. In this regard, the inventor of the present case conducted various reviews to make full use of the active layer of the quantum well structure, and the results show that an adjacent active layer or a layer connected to a fertile layer can be formed with different compositions or different numbers of layers, respectively. The n-type film layer and the P-type multi-layer film layer can improve the luminous output and the performance of a wide range of activities. At the same time, it can also reduce the Vf and increase the electrostatic pressure. Although the reason for the addiction is not very sure *, it may be the 25th in KH ίι nnnn ί I · nn 1 n * ^ i-^ ϋ due to the multilayer film Order --------- 线 ί 锖 先Read it on the back; please fill in this page again for it matters; > Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 4371 03

V. Description of the invention (^ Crystallinity is improved, and then the crystallinity of the active layer or the crystallinity of the layer forming the #p electrode is changed. In addition, a different composition or number of layers may be added (please read the precautions on the back first) Fill in this page again) The multiplication of different n-type multi-layer mold layers and p-type multi-layer film layers 'has a good effect on the whole file #, and thus makes the device characteristics (light-emitting wheel out, Vf' electrostatic withstand voltage, etc. In the ninth to the i-nitride semiconductor device of the present invention, the so-called multilayer film layer refers to a structure in which at least two kinds of single nitride semiconductor layers with different compositions are stacked in two or more layers, that is, The single-nitride semiconductor layer is formed by stacking a plurality of layers, wherein the composition of adjacent nitride semiconductor layers is different. In the 9th to U nitride semiconductor devices of the present invention, the so-called n-type multilayer film The composition of the nitride semiconductor is different from the composition of the nitride semiconductor constituting the p-type multilayer film. Although the composition of a single nitride semiconductor constituting each multilayer film may be the same, it is composed of a plurality of single nitride semiconductor layers. The composition of the multilayer film is different. That is, the composition of the η-type multilayer film and the ρ-type multilayer film may be partially the same, but the composition of the nitride semiconductor is not completely the same. Printed by the bureau M consumer cooperative. For example, the so-called composition difference refers to the difference in the elements (such as the type of binary mixed crystal and ternary mixed crystal), element ratio, or bond gap energy that constitute nitride semiconductors. In addition, the The equivalent value is an average value of the entire multilayer film layer. In addition, in the present invention, the difference in the number of stacked layers means one of the η-type and the P-type, and the nitride semiconductor system constituting the multilayer film layer has at least one additional layer. … Article 261Tm: Paper: 437Ί 03 Λ 7 Β7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs X Consumer Cooperatives ^ V. Description of the Invention (Furthermore, in the ninth to eleventh semiconductor compounds of the present invention, due to the composition When the number of the nitride-rich conductor layers of the P-type multilayer film is less than the number of the nitride semiconductor layers constituting the η-type multilayer film, the light-emitting output, Vf, and electrostatic withstand voltage are all good. The number of layers of the nitride semiconductor layer of the film layer is preferably less than the number of layers of the nitride-rich conductor layer constituting the η-type multilayer film layer. In the ninth to ninth nitride semiconductor device of the present invention, ρ The number of stacked layers of the multi-type film layer may be at least one layer less than that of the n-type multilayer film layer. In addition, in the ninth to eleventh nitride semiconductor devices of the present invention, if the n-type multilayer film layer It contains AlzGai zN (〇SZ < 1), and PN (〇 < p < l): and the P-type multilayer film layer contains AlxGau xNCiXxcl, and in time, it can further obtain good light output, Vf, and static electricity. In addition, in the ninth to π-nitride-rich conductor elements of the present invention, if the P-type multilayer film and / or the η-type multilayer film are formed in a modulating manner, it can be made Luminous output, Vf, and electrostatic withstand voltage increased. In addition, in the ninth to eleventh nitride semiconductor devices of the present invention, the so-called beta tuning doping refers to the single-nitride semiconductor layer used to form a multilayer film, and the impurity 1 degree is related to the phase. The impurity concentration of the adjacent nitride semiconductor layer is different; or the adjacent-side gaseous semiconductor layer used to form the multi-layer film layer is not high quality, and the other side has impurities; in addition, In this case, the impurity concentration is different between adjacent nitride semiconductors. nnt ^ III i I ^. ^ n ^ 1 · II I-i_5 ° J »1 t ^ n ^ n I · < Please read the meanings on the back before filling out this page) This paper is not used in this paper, |, CN (CNS) Al {; ΐ 27 Page 27 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, 4371 〇3 A7 __B7_ V. Description of the invention () Furthermore, in the 9th to 11th nitride semiconductor devices of the present invention In this case, when the composition of the η-type multilayer film layer is different from the composition of the p-type multilayer film layer, the number of layers constituting the P-type multilayer layer and the number of layers constituting the η-type multilayer film layer may be the same or different. Fortunately, it is different, and it is better that the number of layers constituting the P-type multilayer film layer is less than the number of layers constituting the η-type multilayer film layer. In this way, a better light emitting output, V f, and electrostatic withstand voltage can be obtained. Furthermore, in the present invention, when the number of layers of the η-type multilayer film layer is different from the number of layers of the ρ-type multilayer film layer, the composition of the P-type multilayer film layer and the composition of the η-type multilayer film layer may be the same or It is different, but preferably different, so that the effects of the present invention as described above can be obtained. Furthermore, in the present invention, when the number of layers of the η-type multilayer film layer is different from the number of layers of the ρ-type multilayer film layer, the combination of the η-type and ρ-type layer arrays is not limited as long as it is an η-type multilayer film layer The number of layers may be different from the ρ-type multilayer film layer. As described above, it is preferable that the number of layers constituting the ρ-type multilayer film layer be less than the number of layers constituting the η-type multilayer desert layer. Effect of the present invention. Brief description of the drawings: Fig. 1 is a cross-sectional view showing a configuration pattern of a nitride semiconductor element (LED element) according to the first embodiment of the present invention. Fig. 2 is a cross-sectional view showing a configuration mode of an LED element according to a second embodiment of the present invention. Fig. 3 is a perspective view showing a configuration pattern of a nitride semiconductor device (LD device) according to Embodiment 16 of the present invention. Chapter 281Γ This ruler skill Q E 10 砭-7-: Λ! '丨; 丨 ⑺ 丨) X 297 male dragon ------------, clothing .------ -Order ---------, (please read the unintentional matter on the back of the page before filling out this page) Member of the Intellectual Property Bureau of the Ministry of Economic Affairs and the Cooperative Press-4371 03 A7 --- B7 V. Description of the invention ( FIG. 4 is a cross-sectional view showing a configuration pattern of a nitride semiconductor element (LED element) according to Embodiment 2 of the present invention. Fig. 5 is a cross-sectional view showing a configuration pattern of a nitride semiconductor device according to a third embodiment of the present invention. Fig. 6A is a cross-sectional view showing a configuration pattern of a 'P-side contact layer in a nitride semiconductor device according to a fourth embodiment of the present invention. FIG. 6B is an explanatory diagram showing the In composition in FIG. 6A in a pattern. Fig. 7 is an explanatory diagram of light absorption corresponding to the wavelength of the multilayer film (p-side contact layer) of the present invention. Fig. S is a cross-sectional view showing a configuration mode of a nitride semiconductor element (LED element) according to the fifth embodiment of the present invention. Fig. 9A is a diagram showing the upper layer 305c film corresponding to the undoped value in the fifth embodiment. Explanatory diagram of the relative values of thick p0 and v; f. Fig. 9B is an explanatory diagram showing the relative value of the electrostatic withstand voltage corresponding to the film thickness of the upper layer 305c in the fifth embodiment. Fig. 10A is an explanatory diagram showing relative values of Po and Vf corresponding to the film thickness of the intermediate layer 305b in the fifth embodiment. Fig. 10B is an explanatory diagram showing the relative value of the electrostatic withstand voltage corresponding to the film thickness of the intermediate layer 305b in the fifth embodiment. Fig. 11A is an explanatory diagram showing the relative values of Po and Vf corresponding to the film thickness of the underlying layer 305a in the fifth embodiment. Figure ΠB is an explanatory diagram showing the relative value of the electrostatic withstand voltage corresponding to the film thickness of the underlying layer 305a in the fifth embodiment. ------------ ^ -------- Order --------- line- (Please read the precautions on the back before filling in this page) ---- --------------------— IU -r · Ί || _ _: 4371 03 Λ7 _Β7 V. Description of the invention () Comparison of drawing numbers: Intellectual Property Office of the Ministry of Economic Affairs Printed by employee consumer cooperatives 1 Blue Quartz substrate 0 1st buffer layer η 2nd buffer layer 4 η-side contact layer 5 3rd buffer layer 6 η-side multilayer film 6 a 1st nitride conductor film 6b 2nd nitride semiconductor Film 7 Active layer 8 ρ-side multilayer film layer 8a Third nitride semiconductor film 8b Fourth nitride semiconductor film 9 p-side contact layer 10 p electrode 11 p whole electrode 12 η electrode 18 P side cover layer 30 η side region 40 P Side region 50 GaN substrate 52 η-type GaN layer 53 In〇. [Gao.gN layer 54 η-side cladding layer 55 η-type GaN light guide layer 56 Active layer 5 7 Al〇 .: zGa〇_sN layer 58 ρ-type GaN light guide layer 59 P-side cladding layer 60 p-type GaN contact layer 61 ρ-side electrode 70 η-side region 80 P-side region 102 Buffer layer 103 Undoped GnN layer 105 η 1 First multilayer film layer 1 06 η-side _2 multilayer Film layer 106a First nitride semiconductor film 106b Second nitride Conductor 108 ρ side cladding layer 108 a 3rd nitride semiconductor 108b 4th nitride semiconductor film 202 2 203 In side nitride semiconductor layer 204 2η side nitride semiconductor layer 30th buffer layer! '. ^ { CNS) A1 (:: 1〇χ: ^; 7 (Please read the notes on the back before filling this page) 4371 03 Λ7 V. Description of the invention (205th 3n-side nitride semiconductor sliding 208p-side contact layer, 208a The first nitride semiconductor film 208b, the second nitride semiconductor film, and the fl film J05, the first multilayer film layer 3 05a on the η side, the lower layer 305a, the intermediate layer 3 05c, and the second multilayer film on the 306 side. 3063 The first nitride semiconductor film is a detailed description of the invention. The following is a description of a preferred embodiment of the present invention based on the drawings. [Embodiment 1]. The first figure is an umbrella of the present invention. a ^ μ "Nitride semiconductor element (LED element) of structure 1 (structured patterned cross-sectional view. The LE0 element is sequentially stacked (deposited) on the blue quartz substrate 1 with a GaN formed First buffer layer 2 —Second buffer layer 3 made of undoped GaN —Si-doped < Ga An n-side contact layer 4 formed of N, a third buffer layer 5 formed of undoped GaN, a pseudo-side multilayer film layer 6 formed of an InGaN / GaN superlattice structure, and an InGaN / An active layer 7 of a multiple quantum well structure formed of GaN, a p 恻 multilayer film 8 formed of an AlGaN / GaN superlattice structure, and a p-side contact layer 9 formed of Mg-doped GaN. That is, 'for the LED element, on the blue quartz substrate 1', the active layer 7 of the multiple quantum well structure is sandwiched by a first buffer layer 2, a first buffer layer 3, and an n-side contact layer 4. 'The third buffer layer 5 and the n-side multi-layer film layer 6 are composed of the η-side region 3 〇, and a p-side multi-layer layer p. 31 public: *, ί (Please read the precautions on the back before filling this Page) Install -------- Order --------- Transfer to the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to print f2 | fj

8 and the P-side region formed by the P-side contact layer 9. In the nitride semiconductor device according to the first embodiment, as shown in FIG. 1, the n-side region 30 located at the lower portion of the active layer 7 to contain the active layer 7 includes a -η-side multilayer film 6. The n-side multilayer film layer 6 is formed by stacking an i-th nitride-rich conductor film 6a containing In and a second nitride semiconductor film 组成 having a composition different from that of the first nitride semiconductor film 6a. As for the η-side multilayer film layer 6, at least one nitride semiconductor film 6a and the second nitride semiconductor film 6b are formed with at least one layer and a total of three or more layers, and preferably two or more layers are formed respectively. It is better to have 4 or more floors. β When the “multilayer film layer 6 is bonded to the active layer 7”, the multilayer film layer in contact with the first layer (the plutonium layer or the barrier layer) of the thin layer may be the first nitride semiconductor film 6a or The second nitride semi-bibody film "in this case, there is no particular limitation on the deposition sequence of the η-side multilayer film layer 6. In addition, although the η-side multilayer film layer “is bonded to the active layer 7 in FIG. 1, in the first embodiment, the η-side multilayer film layer 6 and the active layer 7 are in between… they have… In addition to the "layer formed by a semiconductor", the [nitride semiconductor film 6 & or the second nitride semiconductor film 6 constituting the n-side multiple film layer 6 must have at least one thickness of 100 angstroms or less. ' It is best tied at 7. Below Egypt, the best is better at 5. Angstrom or less: According to this, the thin film layer can be made below the critical elastic film thickness, and the crystal can be improved, and the first sjj g 1 # α can be transported to make the crystallinity of the first or second gas semiconductor film. Better 'Therefore, the crystallinity of the entire multilayer film can be improved, and the output function of the device can be improved.

f -------- tr --------- # < Qi first read the notes on the back before filling out this page) 4371 03 A7 B7 DESCRIPTION OF THE INVENTION (1) The first nitride semiconductor film 6a is a gas semiconductor of m, which may be a ternary mixed crystal InxGai xN (0 < x < i), or an InxGai_xN with an X value of 0.5 or less. Or InxGaNxN whose χ value is preferably in the heart. The second nitride semiconductor film 6b is not limited as long as its composition is different from that of the first nitride semiconductor film 6a. A second nitride semiconductor film can be grown with good crystallinity, and it must be a two-element mixed crystal or a three-element mixed crystal nitride semiconductor having a larger bond gap energy than the i-th semiconductor semiconductor film core, for example, That is, the entire multi-layered film layer can be formed to have good crystallinity β. Therefore, the optimal combination is that the first nitride semiconductor film 6a uses inxGU with a value of χ of 0 or less, and the second nitride semiconductor film The film is used. In a preferred embodiment, the thickness of both $ 1 and the second nitride semiconductor is 100 angstroms or less. The thickness is preferably less than 70 angstroms, and more preferably less than 50 angstroms. When the thicknesses of the first and second nitride semiconductor films are less than ⑽angstroms, the jth and second nitrides The semiconductor film system can be elastic, and it is less than the critical film thickness. Compared with the thick film, it can grow into a halide semiconductor with good crystallinity. In addition, if both sides are below 70 Angstroms, The multilayer film system can be a superlattice structure. When an active layer is formed on the multilayer film layer having a good superlattice structure, the multilayer touch layer can be used as a buffer layer, which can be grown out. An active layer with good crystallinity. In the first embodiment, at least one of the first or second nitride semiconductor films may have a thickness different from that of the first or second nitride semiconductor films in close proximity. For example, when the rhenium nitride semiconductor film is page 33 (t'Ks.A; λ:

Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, 437103 A7 -------- B: ______ V. Description of Invention

When InGaN 'and the second nitride semiconductor film system is GaN, the film thickness of the inGaN layer between the GaN layer and the GaN layer can be thicker as it approaches the active layer, or thinner as it becomes closer to the active layer. Since the refractive index inside the multilayer film layer can be changed, a layer whose refractive index is sequentially changed can be formed. In other words, it has substantially the same effect as forming a nitride semiconductor layer with a composition gradient (degree). According to this, for a device that must have a light guide path like a laser element, the multilayered film layer can be used to form a guide path, and the mode of the laser light can be adjusted. In addition, at least one of the first or second nitride semiconductor films has a composition of a Group III element, and its composition may be different from that of the first or second nitride semiconductor films in close proximity. For example, 'When the 帛 1 nitride semiconductor film system is InGaN and the second nitride semiconductor film system is GaN, the In composition system of the inGaN layer located between the GaN layer and the GaN layer can be more close to the active layer or larger The less it is close to the active layer, accordingly, the refractive index inside the multilayer film layer can be changed in the same way as the film thickness is changed sequentially, and a nitride semiconductor layer with a compositional degree of the substance is substantially formed. As the ln composition decreases, the refractive index tends to decrease. In addition, in the first embodiment, both the first and second nitride semiconductor films may be those in which no impurities are connected, or both of them may be used. Type impurities, or even one of them is the one with impurities. In order to make it have good crystallinity ', it is preferably an undoped one, followed by a modulation dopant followed by a doped both. When both are doped with n-type impurities, the n-type impurity concentration of the first nitride semiconductor film is preferably different from the n-type impurity concentration of the second nitride semiconductor film. __ 页 Page 34 paper ik rule, for h-g country standard ---------------------------------

^ -------- Order · -------- Turn (埼 first read the Note Temple on the back? Matters and then fill out this NO 43 71 Ο Α7 __________R7 __ _ 5) Description of the invention () Furthermore, In this embodiment, as shown in FIG. 1, the P-side region for sandwiching the active layer and located on the upper side includes a p-measurement multi-layered dielectric layer 8. The p-side multi-layered film layer 8 is composed of a The third nitride semiconductor film 8a containing A1 and a fourth nitride semiconductor film 8b having a composition different from that of the third nitride semiconductor film 8a are stacked. As for the p-side multilayer film layer 8, the system is As with the η-side multilayer film layer 6, the third nitride semiconductor film 8a and the fourth nitride semiconductor film 8b are each formed with at least one layer and a total of 3 or more layers. It is preferable that two or more layers are formed. It is better to have a total of more than 4 layers. In addition, when the p-side region includes a multi-layer film layer:: ¾ • When the film thickness is thinner than the wide film layer on the π-side, the element's vf and initial value are As shown in FIG. 1, when the p-side multilayer film layer 8 is bonded to the active layer 7, it is in contact with the lowermost layer of the active layer. Layer) The p-side multilayer film layer may be the third nitride semiconductor film 8a or the fourth nitride semiconductor film 8b. In addition, although the P-side multilayer film layer 8 is bonded to the active layer 7 in FIG. However, a layer made of another nitride semiconductor may be provided between the p-side multi-layer film layer 8 and the active layer 7. Furthermore, in the first embodiment, one of the fourth nitride semiconductor films or The film thickness of the two can be different from the thickness of the adjacent third or fourth nitride semiconductor film. For example, 'When the third nitride semiconductor film is AlGaN and the fourth nitride semiconductor film is GaN, it is located on the layer. The thickness of the AlGaN layer between the GaN layer and the active layer can be thicker or thinner as it approaches the active layer. Based on this, the refractive index can be formed because the refractive index inside the multilayer film layer can be changed. The order changes the layer. In other words, its essence ___ _ page 35 of this' 丨 'R'. "Hit: 1—. (Please read the Note If on the back first and then fill out this page.) --Order --------- Production

Du Yin M 4371 Ο Λ7 B7, Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Printed by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs For devices that must have a laser-guided light-guiding path or a light-blocking layer, the multilayer film layer can be used to form a light-guiding path and a light-blocking layer at the same time * to adjust the mode of laser light. At least one of the third or fourth nitride semiconductor film has a composition of a Group III element, and its composition may be different from that of the adjacent third or fourth nitride semiconductor film. For example, when the third nitride semiconductor film is AlGaN 'and the fourth nitride semiconductor film system is 0 aN, the Al1 composition system of the AlGaN layer located between the GaN layer and the GaN layer can be more closer to the active layer' or less the closer to the active layer, and accordingly, As in the previous aspect, the refractive index inside the multilayer film layer can be changed, and a nitride semiconductor layer with a composition gradient can be formed substantially. Moreover, as the composition of A1 increases, the refractive index system becomes smaller and smaller. Therefore, the layer having such a composition gradient can be disposed on the P layer side according to the purpose. The third nitride semiconductor film 8 a is a nitride semiconductor containing A1, and the system may be a ternary mixed crystal, or The value of a is preferably AlaGa 丨 -aN below 0'5. When the value of a is more than 0.5, the crystallinity will be deteriorated, and the gap will be easily incorporated. In addition, the fourth nitride semiconductor film 7b As long as the composition is different from the third nitride semiconductor film 8 a, it is not particularly limited, but it is necessary to grow the fourth nitride semiconductor film 8 b with good crystallinity. A binary mixed crystal or a ternary mixed crystal nitride semiconductor having a larger bond gap energy than the third nitride semiconductor film, such as GaN, can make the grown multilayer film have good crystallinity as a whole. Therefore, it is the best The combination is: Page 3 of the third nitride. Page 36 ^ _............. a ': · v -hj-7 < Please (Read the precautions on the back before filling this page) ^ 衣 .------- Order --------- d37l 〇3

Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (Conductor film 8a uses a value less than 0, and the fourth nitride semiconductor 8b uses GaN. Furthermore, J nitride semiconductor film 8 The thickness of a is 100 angstroms or less, and more preferably 70 angstroms or less. The more preferred is 50 angstroms or less. Similarly, the thickness of the fourth nitride semiconductor film 8 b is []. Below 0 angstroms, and preferably below 70 angstroms, more preferably below 50 angstroms. When the thickness of the 1st or 4th nitride semiconductor film is ⑽angstroms or less, bismuth may be used. When the elastic critical film thickness of a nitride semiconductor is less than that of a thick film, it is a KUM compound semiconductor. In addition, since the crystallinity of the nitride semiconductor layer becomes better, a P-type is added. In the case of impurities, the carrier concentration will increase, because ππ can obtain a ρ layer with a lower resistivity. At the same time, the initial value of w and the element can be reduced. This is explained in the third nitride half of Embodiment 1 Both the guide ft and the fourth nitride semiconductor film 8b may be undoped, or Both of them can be incorporated into p-type impurities, or even one of them is doped with P soil impurities. 3 is a ρ layer with a high carrier concentration, and it is best to modulate the impurity. As mentioned above, the thickness of the above-mentioned ice when it is undoped is (M ... the lower is better, and it is preferably below 700 angstroms, and more preferably below 500 angstroms. If When the thickness is larger than 0.1 and the thickness exceeds 0.1, the resistance value of the undoped material layer tends to increase. When both of them are doped with p-type impurities, the third mouse compound semiconductor film 8a The ρ-type m❹μ u is the ρ-type impurity concentration in the fourth nitride semiconductor film 8 b. As for the nitride semiconductor device of the above embodiment, 'though this page 37 nnnnnn. nnn In 01 I — II ..... II ϋ II (Please read the precautions on the back before filling this page) A7 A371 〇3 _B7_ V. Description of the invention () The p-side multilayer film 8 is formed in the p-side region 40, but the present invention is not limited to this It can also replace the p-side multilayer film layer 8 with a single p 恻 cover layer 18 as shown in Fig. 2. In addition, the nitride semiconductor in Fig. 2 In the case, the p-side region 41 is composed of the p-side cover layer 18 and the p-side contact layer 9. [Variation Example] Although the LED element has been described as an example in the first embodiment, the present invention It is not limited to this, and it can also be applied to the second group of lasers. The effect is the same as that of Embodiment 1. At the same time, it can be changed as follows. In other words, for the LD device, the η-side multilayer film layer can be changed by A first nitride semiconductor film formed of InGaN and a second nitride semiconductor film formed of GaN are alternately stacked on each other, and the film thickness of the first nitride semiconductor film is sequentially increased toward the active layer. Big. Since the η-side multilayer film has the above-mentioned structure, the ratio of InGaN with a large refractive index for the η 恻 multilayer film layer will increase as it approaches the active layer, and as the η-side multilayer film layer will approach The active layer has an increased refractive index, so a layer with a refractive index gradient can be obtained. In addition, for the LD device, the p-side multilayer film layer may be formed by alternately stacking a third nitride semiconductor film made of AlGaN and a fourth nitride semiconductor film made of GaN, and the The film thickness of the third nitride semiconductor film is sequentially reduced toward the active layer. Since the P-side multilayer film has the above-mentioned structure, for the P-side multilayer film, 'its page 3B:: .ίΐ ^ ^:': ·;!-Mi1: {> '] :: >. 2 ::}) ϋ— ϊ JJ. N I-m ί 1 1 t ί 1. I-— i I. ~ I-nn in 1 ^ 1 I (Please read the notes on the back before filling this page ) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 〆4371 0 3 V. Description of the Invention (The proportion of A1GaN will decrease as it approaches the active layer, and as the p-side multilayer film layer approaches the active layer, Its refractive index increases, so a layer with a refractive index gradient can be obtained. From the above-mentioned 'LD element system composed as described above and embodiment i-like', the crystallinity of each nitride semiconductor layer can be obtained. It becomes better, so that the initial voltage can be reduced, and the output can be improved. In addition, for the LD device, since it is located between the η 恻 multilayer film sandwiching the active layer and the p-side multi-wide film layer, It is a layer with a refractive index gradient that is closer to the active layer and has a higher emissivity, which can form a good optical waveguide path, and can easily Effectively adjust the mode of the laser light ... In the example of the LD device described above, the multilayers of the n-side and p-side layers are refracted by the change in the film thickness of the first and third nitride halves. However, the present invention is not limited to this. It can also sequentially change the film thickness of the second and "nitride semiconductor films" to make it a refractive index gradient layer. [In addition, "in the present invention," the first Or the second nitride semiconductor film has at least "is a composition of a group m element" and its composition is sequentially different from the adjacent < the same as the group VIII element composition ... or the second nitride semiconductor film is based on Refractive index gradient. For example, when the i-th nitride semiconductor system is InGaN 'and the second nitride semiconductor film system is GaN, the In ratio system in a 1-nitride semiconductor film gradually increases as it approaches the active layer, so its refraction The rate can be increased as it approaches the active layer, and thus can be:-a nitride semiconductor layer that also has a refractive index gradient ... for Youzhou 筇 391 f Μ -------- ^ ------ --- ^ (Please read the notes on the back before filling out this page) Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Printed by a cooperative

43 71 〇3 V. Description of the invention (In terms of 61, the increase in the composition of In increases the refractive index system. In addition, for the p-side multilayer film, there is at least one of the right J or the fourth nitride semiconductor film. — 为 笛 m 社 _ is the composition of the 111th group of halogens, and its composition is sequentially different from that of the 3rd, 3rd, or 4th nitride semiconductor film in close proximity, so that it can have a refractive index gradient. _ 丨 Tiandang 3 nitride semiconductor film system is AKJaM, and the fourth nitride plume is transferred to β

If the Al conductor film is located between the GaN layer and the GaN layer, the A1 composition of the 〇aN layer is closer to the active layer, and the refractive index of the P-type multilayer film can be reduced. The change can further form a nitride semiconductor layer with a composition gradient. Moreover, the refractive index becomes smaller and smaller as the composition increases. Therefore, the layers having these composition gradients can be arranged on the p-layer side according to the purpose. [Embodiment 2] A nitride semiconductor device according to Embodiment 2 of the present invention will be described below with reference to Fig. 4. 'The nitride semiconductor device according to the second embodiment of the present invention is a light-emitting device having a double-type structure.' It is formed on the substrate 丨 an active layer 7 having a multiple quantum 丼 structure, wherein the active layers 7 are- The n-side region 130 and a p-side region formed by the plurality of nitride semiconductor layers are sandwiched. As shown in the figure of the nitride semiconductor device 4 in Embodiment 2, the n-side region 丨 3 〇 includes a buffer layer 丨, an undoped GnN layer 103, and an n-type Impurity n-contact layer—the η-side first multi-layered film layer 1 containing η-type impurities, and—from the first summer I * ”— — J y KA ίΐ ί >] ψ ---- ------ ------------------ '' Ϊ · '· = f- ((.; KS) A 1 rti ^ r (:)] 〇y 207 ----- -------- Install -------- Order --------- End < please read the back; please fill in this page before paying attention to the matter) Staff of Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives Co., Ltd. Page 40 Λ7 B7 4371 03 V. Description of the Invention (The n-side second multilayer film layer 106 formed by the semiconductor semiconductor film 106a and the second nitrogen + conductor film 106b; The yttrium region 140 includes a cover layer 8 formed of a single layer or a multilayer film, and a ρ-side GnN contact layer 9 doped with Mg. Furthermore, in the embodiment of the semiconductor semiconductor device, An η electrode 12 and a p electrode η are formed on the η-side contact layer 4 and the P-side GnN contact layer 9, respectively. Further, in FIG. 4 As the ρ side cover 108, it is a multilayer film formed by stacking the first QSa and the second semiconductor film 。. In the present invention, what is used as the 44 & Blue quartz with c-plane, R-plane, and A-plane as the main surface, or an insulating substrate such as spinel (MgAi), or SlC (containing 6h, 4h, and 3c), Zn, GaAs A semiconductor substrate such as GaN. In the present invention, the buffer layer 102 is a nitride semiconductor formed by GadAli dN (d is in the range of 0 < <!£;), where A1 The smaller the ratio, the more obviously the composition and crystallinity are improved. Therefore, the buffer layer i 〇2 is preferably composed of GaN. The film thickness of the buffer layer 102 is between 0.002 and 0.005 m. It is better to adjust between 0.005 ~ 0.2 # m, and more preferably between 0.001 ~ .02 V m. If the film thickness of the buffer layer 1 〇 2 is adjusted in the above range In the circle, the crystallinity of the II semiconductor will be improved, and the crystallinity of the nitride semiconductor grown on the buffer layer 102 will be improved. The growth temperature of the buffer layer 102 Between 200 and 900 degrees C, it is best to adjust between 400 and 800 degrees C. When the growth temperature is above ---- II ----------- 1 — Order · ! III — —. ^ '* (Please read the notes on the back before filling out this page) Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Page 41 4371 03 A7 37 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [Explanation of the Invention] (Within the temperature range®, the system can form a good complex crystal. Using the complex system as a seed crystal, the crystallinity of the halide compound semiconductor grown on the buffer layer 1 will be improved. Depending on the type of substrate and the growth method, the above-mentioned buffer layer 102 formed at a low temperature may be omitted. Secondly, in the second embodiment, the undoped GnN layer 103 is a layer that is not added with n-type impurities when grown. If the undoped GnN layer 103 is grown on the buffer layer 102, the crystallinity of the undoped GnN layer 103 will be good, and the growth will be made on the undoped GnN layer 103. The crystallinity of the η-side contact layer 4 and the like on the high-quality GnN layer 103 is improved. The film thickness of the undoped GnN layer 1 0 3 is more than 0,01 m, and preferably it is more than 0.5 ν m, and more preferably more than 14 m. When the film thickness is In the above range, the layers after the n-side contact layer 4 can be grown with good crystallinity. In addition, the film thickness of the undoped GnN layer 103 is not limited, and it can be appropriately adjusted in consideration of manufacturing efficiency. Next, in the second embodiment, the n-type impurity contained in the n-side contact layer 4 containing the n-type impurity has a concentration of 3 x 10 iS / cm3 or more, and more preferably 5 X I 0 " / cm3 or more. When a large amount of the above-mentioned n-type impurity is incorporated and this layer is used as the n-side contact layer, V f and the initial value can be reduced. If the impurity concentration is out of the above range, Vf will be difficult to decrease. In addition, when the A η-side contact layer 4 is formed on the undoped layer 103, it may have good I crystallinity regardless of whether or not the system has a high concentration of η-type impurities. In the present invention, although the n-type impurity of the n-side contact layer 4 has a certain upper limit, in order to hold it as a good contact layer function (please read the precautions on the back before filling this page), t -------- Order --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Illness and Economics 4371 03 V. Description of the invention () Crystallinity, its concentration is best at 02! / Cm3 the following. The composition system of the n-side contact layer 4 may be composed of IneAlGai e tN (〇 幺, e + kl). The composition is not limited, but in order to obtain a nitride semiconductor layer with less crystal defects, it is made of GaN, Or, AlfGai-fN with an f-number of 0-2 or less is preferred. In addition, although the film thickness of the n-side contact layer 4 is not limited, but it is a layer for forming an η electrode, so the film thickness is 0′1 to 2〇 # m. The best is between 0.5 ~, and more preferably between 1 ~ ^ m. If the film thickness is within the above range, the resistance value can be reduced, and the forward voltage of the light-emitting element can be reduced. In addition, the n-side first multilayer film layer described later is formed into a thick film And using # 'as the contact layer, the n-side contact layer 4 can be omitted. Furthermore, in Embodiment 2, the first n-side multilayer film layer 105 is formed of a multilayer mold formed by stacking nitride semiconductor layers, and the nitride semiconductor layer system includes at least two kinds of Different from each other. Doped semiconductor layers with different bond gap energies, or two semiconductor layers with the same composition doped at mutually different n-type impurity concentrations. It is below 2 / zm, preferably below i 5 # m, more preferably below 0.9 ym. Although the lower limit is not necessarily limited, it is preferably above 0.0 5 ym. Nitrogen constituting the multilayer film Different concentrations of compound semiconductor layers can be modulated by doping. At this time, one of the layer films is in a state of no impurity, that is, it can be in an undoped state.---- I ---- -Install --- II --- Order --- ------. ^ (Please read the precautions on the back before filling this page) '' 4371 03 A7

V. Description of the invention () The following is the first description of the “ΐ” side multi-layer film! 〇5 is a multilayer film formed by at least two nitride semiconductor layers with different bond gap energies ” The thickness of the nitride semiconductor 105a which has a large bond gap energy and the nitride-rich conductor layer 105b with a small chain gap energy, which constitute one of the n-side first multilayer film layers 105, is 100 angstroms or less, and It is preferably below 70 angstroms', and more preferably adjusted within a range of 10 to 40 angstroms. When the nitride semiconductor I 105a with a large bond aging energy and the nitride semiconductor layer with a small bond gap energy 丨When the thickness of 05b is more than 100 angstroms, the thickness of the film is more than the elastic treasure limit. Therefore, slight gaps or crystal defects will easily occur in the film. Although nitrogen with a large bond gap energy The lower limit of the thickness of the compound semiconductor layer 105a and the nitride semiconductor layer 105b with a small bond gap energy is not particularly limited, as long as it is at least [atomic layer] ^, but it is preferably at 10 angstroms as described above. Above. Consumer Cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs When the above-mentioned η-side first multilayer film layer 105 is a multilayer film structure in which each layer has a thin film thickness, each layer thickness of the nitride semiconductor layer constituting the multilayer film layer may be Below the elastic critical film thickness, it can grow into a nitride-rich conductor with very few crystal defects. Furthermore, since the multilayer film can be formed by a GnN layer 1 0 and impurities not formed on the substrate The η-side contact layer 4 prevents the occurrence of crystal defects to some extent, so that the crystallinity of the η-side 2 multi-layer film layer 106 which is grown thereon is improved. In addition, there is also an effect similar to that of ΕΕMT. The nitride semiconductor layer 105 with a large bond gap energy is a nitride semiconductor containing at least A1, which is preferably composed of AlgGahNtiXgs: ^ page 44 of this fcV; ... the scale Hongmingzhong; home Θ 芈(CNS) AI is now 公 0) I ... ----- A; B; 4371 〇 5. Description of the invention (who grew up. In addition, the semiconductor semiconductor layer with a smaller bond gap energy 1 0) b As long as the bismuth has a smaller bond gap energy than the halide semiconductor layer 1 0 5 a having a larger bond gap energy, it is sufficient that f , Which can be such as AlhGa!-HN (0 < hsl, g > h),

InjGa Bu "N (0 <" 21) is easy to get 〇1, spoon *: _Kun EtH or 3 yuan; Kunjing's nitride semiconductor, to obtain good company a. ,,. From the old & f clarity . Among them, the nitride semiconductor layer 105a having a large 1 Å bond gap energy will have a clear μΛ:,.. Τ 九 J £ i Τ # is based on AlgGai_ gN (0 < gSl) ′ without in, and bond land energy The smaller nitride semiconductor layer ι0 讣 is preferably one which does not contain yttrium. Among them, in order to obtain a multi-crystalline layer with good crystallinity, it is preferable to have a mixed crystal ratio of 0.3 or less. AlgGa 丨 -sN (〇 < g $ i; ^ Combination of GaN 3 In addition, the i-th multilayer film layer on the 1¾ n side is used as the cover layer, so that it has a light-blocking layer or a carrier-blocking layer. In the function, a nitride semiconductor layer with a large bond gap energy must be grown from the well layer of the active layer. The so-called nitride semiconductor layer with a large bond gap energy refers to a nitride semiconductor with a higher A1 mixed crystal ratio. As far as the conventional technology is concerned, if an oxide semiconductor with a higher A 丨 mixed crystal ratio is formed with a thicker film thickness, gaps are more likely to occur, and crystal growth is very difficult. However, as the present invention claims, As described above, if the first multilayer film layer 105 on the η side is formed into a multilayer film layer, each nitride constituting the multilayer film layer 〇5 conductor layer a, l〇 5 b) based with a thickness of a critical film thickness or less elasticity to grow, and therefore, even if it is slightly higher than the mixed crystal A1 a crafty 'will not produce a gap. According to this, a layer with a high A1 mixed crystal ratio with good crystallinity can be grown, and the effect of light confinement and carrier confinement can be improved. At the same time, for the laser element, it can reduce the starting voltage For LED devices, * it can reduce vf (forward voltage). No. 45 ---- ............ I 'Magnetic

Test ruler c?: ΡΗ ·: ¾ Wide family (ΐ 芈) (CNS); \; ·· ΐΐ W f Please read the precautions on the reverse side before filling out this page) Installation -------- Order --- ------ Member of the Intellectual Property Bureau of the Ministry of Green Economy printed by the Consumer Cooperative Cooperative. The employee of the Intellectual Property Bureau of the Ministry of Economic Affairs printed 43 1 〇 [λ? ________ B7___ V. Description of the invention () Furthermore, the μ gap energy is large. It is preferable that the n-type impurity concentration between the nitride semiconductor I 105a and the IL compound semiconductor layer 1Q5b having a smaller gap energy is different. This is the so-called modulation doping, which makes the concentration of n-type impurities in one of the layers smaller or in a state where no impurities are doped, and the other layer is the same concentration, which can also make the starting voltage ' And so on. This is because when a layer with a low impurity concentration exists in the multilayer film layer, the mobility of the layer will increase, and because it exists at the same time as a layer with a high impurity concentration, the The state of the degree forms a multilayer touch layer. In other words, since a layer with a low impurity concentration and a high mobility and a layer with a high impurity concentration and a high carrier concentration coexist, a layer system with a high carrier concentration and a large mobility can also be a covering layer 1. We can infer that the starting voltage and vf can be reduced. When the nitride semiconductor layer 105a with a large bond gap energy is doped more, the impurity amount incorporated in the nitride semiconductor layer with a larger bond gap energy 丨 05a is id〇17 / cm3 ~ uio2 (Vcm3, it is preferably adjusted in the range of ix101 × m3 ~ 1x101 / c ^. If it is less than i X 1 0 / cm, the nitride semiconductor layer 1 with a smaller bond gap energy The difference between 〇 讣 will become smaller, so it will be difficult to obtain-a layer with a larger carrier concentration: In addition, when it is greater than lxl02Q / cm3, the leakage current of the element itself will increase. On the other hand, Although the n-type impurity concentration of the nitride semiconductor layer with a smaller bond gap energy may be less than that of the nitride semiconductor layer with a larger bond gap energy ', it is preferably less than 1/1 (). In fact, most Fortunately, when it is not doped, a layer with the highest mobility can be obtained, but because the thickness of the film is thin, there will be a nitride semiconductor layer with a large diffusion gap energy from the bond .... .-_ -I · —Taoyi ^ J- · 1 · -1, >. J > «, ·», ... .............: λ -: ------------___________ ------------- ^ ---- < Please read the notes on the back before filling out the last page) Order --------- Line A7 ---- 〆4371 〇 V. Description of the invention (n-type impurity of 105a, and its amount Also. 糸 is preferably below hlOH / cm3. As

η ”impurities can be such as si, Q

: Gan 1 S, 〇 etc. Periodic Table IVB

The group 'It is best to use Si, Ge, and S to intersect 祚 A „^ t to be n-type impurities. In this nitride semiconductor layer 105a with a large bond gap energy ... •, less η type Impurities' and nitride-rich soils with smaller bond gap energy ^ The layer 105b also has the above-mentioned effect when it is doped with more η-type dopants. In addition, it constitutes the first multilayer limb a on the η side. For the nitride semiconductor layer 105a and the argon semiconductor layer 3 iU; ib, 'where', for a layer doped with a high concentration of impurities, it is better in the thicker thickness of the thicker layer in the thick semiconductor layer near the center of the semiconductor. The impurity concentration is large, and the impurity concentration near the end of a large amount of cargo is small (preferably in a non-contact state). Furthermore, when the multilayer film is made of A1GaN doped with n-type impurity Si In the formation of plutonium without changing impurities, miGaN has n-type hetero f & therefore, electrons are generated as donors to the conduction band. 'The electron system falls to the low potential of plutonium conduction. It is doped with a donor impurity, so it will not be diffused by the carrier of the impurity. Therefore, the electron system can be easily transferred. In the GaN crystal, 'thereby increasing the substantial electron mobility. This is similar to the effect of a two-dimensional electron gas', which increases the substantial electron mobility in the transverse direction of the electrons' and reduces the resistivity. Furthermore, if the Doping a high concentration of η-type impurities in the central region of AlGaN with a large bond gap energy will increase the effect. That is, 'Because of the relationship between the electrons moving in GaN, it will be somewhat affected by the content of AlGaN. Diffusion of η-type impurity ions (Si). However, if the two ends of the AlGaN layer are not doped, they will be less susceptible to the diffusion of Si. Page 47 of the GaN layer f. First read the back of Jing φν; fill in the contents of the first issue -------- order --------- printed by the staff consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs System «,, ——....., |… I --- 4371 〇3 B. V. Description of the invention () Improvement of mobility. Secondly, it is about the first multilayer film layer on the n side 1 〇5 It is composed of a nitride-rich conductor layer of the same composition, and the nitride semiconductor layers are doped with n-type impurities of different concentrations, respectively. At this time, 'it is used to form a nitride semiconductor of the first multilayer film layer η on the η side and a certain composition limit, as long as it is the same composition, and the preferred material can be GaN When the first multilayer film 丄 05 is made of GaN, the growth crystallinity of the ternary mixed crystal GaN is better than that of the ternary mixed crystal, and the crystallinity of the nitride semiconductor grown later is good. In the second embodiment, the multilayer film of the η-side first multilayer film layer 105 is composed of a nitride semiconductor layer 105a containing τι-type impurities and formed of GaN, and an n-type impurity concentration different from The nitride semiconductor layer is formed by stacking a nitride semiconductor layer 105b made of GaN. In this case, one of them may be an undoped substance. As described above, the first multilayer film layer 1 on the η side is formed by using two kinds of nitride semiconductor layers having the same composition and different doping amounts of η-type impurities with each other. In this case, the same effect can also be obtained when the n-side multilayer film layer 105 is formed with at least two types of layers with different bond gap energies and modulated doping. The N-side impurity concentration is between lxlOl7 / cml1 > < 102! / Cm3, preferably in the range of lxlOiS / cm3 to lxlO19 / cm3. In addition, in the present invention, although the total thickness of the η-side first multilayer film layer 105 is not particularly limited, it is preferably set to be 1,000 to 4000 angstroms, and more preferably 2000 to 300. ㈧ 埃. The thickness of each layer constituting the multilayer film is less than 500 Angstroms. Page 48— 丨 _ I.-_. „·. SM ·-. ~ T ---, ν, · Κ ··« »- ----- — .. Published by the user ((: Ν ”) Αί ″ 格 χπ; 7 公 没) _ (Please read the precautions on the back before filling this page) Packing ----- Order --------- Pray printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs 4371 03 A7 ________ B7__ V. Description of the invention () (Please read the precautions on the back before filling out this page) Below 200 Angstroms, more preferably below 100 Angstroms. In addition, the lower limit of the thickness of each layer constituting the multilayer film is not particularly limited, and it is sufficient if it is at least 1 atomic layer ', but it is most preferably at least 10 angstroms. If the film thickness is as described above, it can be grown with good crystallinity, and its luminous output can be improved. In addition, as described above, the n-side t-th multilayer film layer 1 composed of two or more layers having different bond gap energies or the same composition but different impurity concentrations may also serve as the n-side contact layer. At this time, the thickness of the first multilayer film on the η side is between 0 and 5 to 4 ν m, preferably between 3 ν m, and more preferably between 2 and 2.8 / z m. The thickness of the n-side first multilayer film layer 105 at this time is adjusted according to the number of layers of two or more kinds of nitride semiconductor layers and / or each film thickness. In addition, each of the film thicknesses constituting the first multi-layer film layer 1 on the η side at this time may be a multi-film layer that is a thin film layer in the above-mentioned range. In addition, in terms of the overall film thickness, if it has both η When the above-mentioned film thickness range of the η-side first multilayer film layer 105 on the side contact is set, each film thickness is adjusted based on two or more kinds of nitride semiconductors exceeding the above range. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, in the second embodiment, as shown in FIG. 4, the n-side region 1 3 0 for sandwiching the active layer 7 and located on the lower side includes an n-side. The second multilayer film! 06. The second multilayer film layer 106 is composed of a first nitride semiconductor film 106a containing In and a second nitride semiconductor film having a composition different from that of the first nitride semiconductor film 106a. 1 06b was formed. With regard to the second multilayer film layer 〇6 on the η side, the first nitride semiconductor film 106a and the second nitride semiconductor film 106b are at least respectively shaped. Page 49 IHIII 1 «... :! Zhong d. Technical Branding (:. :) 〇χ: 入: / cm: 1 -------------- 437 丨 03 A7 B? V. Description of Invention (Intellectual Property Bureau, Ministry of Economic Affairs Employee consumer cooperative printed with more than one layer, a total of 2 or more, or more than 2 layers, the most is more than 2 layers, a total of 4 or more is better. 3 On the η side, the second multi-layered layer 106 is joined to the activity. When the layer 7 is in contact with the first layer (well layer or barrier layer) of the active layer, the first nitride semiconductor film 106a or the second nitride-rich conductor can be used! 〇6b, at this time, η 恻 第The stacking order of the two multilayer film layers 106 is not particularly limited. Although the second multilayer film layer ι06 on the η side is bonded to the active layer 7 ′ in FIG. 4, the second multilayer film layer on the η side 丨 〇 A layer made of another n-type nitride semiconductor may be provided between 6 and the active layer 7. In the second embodiment, as for the n-side second multilayer film layer 106, the first nitride Among the semiconductor 讣 106a or the second nitride semiconductor film, at least one of them must have a thickness of 100 angstroms or less, and the i-th nitride semiconductor film 106a and the second nitride are preferable. Semiconductor film} 〇6b Both are below 100 angstroms, more preferably below 70 angstroms, and more preferably below 50 angstroms. According to this, since the thinner the film thickness, the n-side second The multi-layered film layer 106 will form a superlattice structure 'so that the crystallization of the second multi-layered film layer 106 on the η side will be better' and further improve its output. From the above, 'Because of the first multi-layered η-side layer' The combination of 〇5 and the second multi-layer film layer on the ^ side 丨 〇6 can further increase the luminous output and further reduce the forward voltage (Vf). Although the reason is not very clear, it can make it grow n: The crystallinity of the active layer on the second multilayer film layer 106 can be determined better. The first nitride semiconductor film 106a is a nitride semiconductor containing In. Its system may be 3 YuanGai kN (〇 < k < i), or k is best to be separately (please read the matter of the king on the back before filling out this page) Pack --- (order ----- -Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

AkK. $. REi! 43 7 ^ a? ___B7 _ Description of the invention () InkGaUkN whose value is below 0.5, or InkGa! -KN whose k value is preferably below 0.2. The second nitride semiconductor film 106b may have a composition different from that of the first nitride semiconductor film 106a, and is not particularly limited. However, the second nitride semiconductor film 106b is a second nitride having good crystallinity. The semiconductor film 106b 'needs to be a two-element mixed crystal or a three-element mixed crystal nitride semiconductor having a bond gap energy larger than that of the first nitride semiconductor film 06a. In the second d side film layer 106 on the η side, the second nitride semiconductor film i〇6b system may be IntnGai-mN (〇Sm < 1, m < k), so that the whole can grow into a good crystallinity. The multi-layer film layer is preferably GaN. Therefore, the best combination system is: the first nitride semiconductor film 106a uses inkGa and kN with a k value of 0.5 or less, and the second nitride semiconductor film ι〇61) uses GaN. Jiang Zhe, in the first embodiment, at least one of the first nitride semiconductor film 106a or the second nitride semiconductor film 106b may have a different thickness from that of the first nitride semiconductor film 106a or the second nitrogen. Thickness of the compound semiconductor film 106b. In addition, the difference between the film thickness and the adjacent layer means that when the multilayer film layer is composed of a plurality of first nitride conductor films 106a and a second nitride semiconductor film 106b, the second nitride semiconductor film The thickness of 106b (first nitride semiconductor film 106a) is based on the thickness of the first nitride semiconductor film 106a (second nitride semiconductor film 106b) sandwiching the second nitride semiconductor film 106b. The meaning of the film thickness is different. For example, when the first nitride semiconductor film 106a is InGaN and the second semiconductor film 106b is GaN, the closer the film thickness of the InGaN layer between the GaN layer and the GaN layer is to the active layer, the more the Thicker, or thinner the closer to the active layer, 'according to this' can make the inside of the multilayer film fold. Page 51 ΐ-;; ν · ",(21; >: vr, 7 — l! III! Iln — 衣 .----— I— (Please read the notes on the back before filling in this page) '4371 03 Λ7 B? Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy Forming the layer a whose refractive index sequentially changes, in other words, it is essentially the same as forming a nitride semiconductor layer with a composition gradient. Accordingly, 'for a device that must form a laser-guided optical waveguide path, Then, the multilayer film layer can be used to form a guided wave path, and the mode of laser light can be adjusted. Furthermore, at least one of the first nitride semiconductor film 106a or the second nitride semiconductor film 106b is the first The composition of group II elements, and its composition system may be different from the adjacent i-th nitride The body film i 〇6a or the second nitride semiconductor film 106b. The difference in composition means that when the multilayer film layer is composed of a plurality of first nitride semiconductor films 106a and second nitride semiconductor films 106b, the second The composition ratio of the nitride semiconductor film 106b (i-th nitride semiconductor film 106a) is the same as that of the first nitride semiconductor film 106a (second nitride semiconductor film 106b) sandwiching the second nitride semiconductor film 106b. Means that the composition ratio of the Group III elements is not the same. For example, 'When the composition of the same Group III elements is different from each other, and the first nitride semiconductor film 106a is inGaN and the second nitride semiconductor film 106b is GaN, The inGaN layer of the inGaN layer located between the GaN layer and the GaN layer can be closer to the active layer, or the closer to the active layer, the less the active layer can be. Based on this, as the film thickness changes sequentially, multiple film layers can be made. The internal refractive index changes to form a nitride semiconductor layer with a composition gradient. Also, as the In composition decreases, the refractive index tends to become smaller. The second multilayer film layer on the η side 1 〇 6 It can also be provided separately from the active layer, but preferably The active layer is located next to each other > When adjacent to the active layer, it can be made on page 52 11t -------- Order ------------ 嫂 (Please read the back page first Note: Please fill out this page again) 4371 03 A7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (Rotation is easier to improve. In addition, for the n-side second multilayer film 100, its i Both the nitride semiconductor film 106a and the second nitride semiconductor film 106b may be undoped, or both of them may be doped with impurities. However, in order to further improve the crystallization performance, it is better to be undoped, and the second best is to incorporate one of the first nitride semiconductor film 106a and the second nitride semiconductor film 〇06b ^ Type impurities, so-called modulation doping, and secondly, both are doped. When both types are doped with n-type impurities, the n-type impurity concentration of the nitride semiconductor film 106a may be different from the n-type impurity concentration of the second nitride semiconductor film 106b. In addition, as the n-type impurity, elements such as Si, Oe, Sn, and Group ιν or Group ν, or the like, are preferably Si and Gn as "impurities". Here, the so-called non-doped Impurities are states that are not intentionally doped with impurities. For example, for cones mixed by diffusion from an adjacent nitride semiconductor layer, 1 is also an unsupported impurity in the present invention. In addition, impurities due to diffusion and diffusion are Gradient of impurities in the layer. In addition, when the first nitride semiconductor film 106a and / or the second halide semiconductor film 106b is doped with n-type impurities, the impurity concentration is adjusted to 5xl021 / cm3 or less. 'The better one is adjusted as follows. If it exceeds 5 × 10 2 VCm3, the crystallinity of the nitride semiconductor layer will be deteriorated, but the output will be reduced. This is the same for 3 when the dopant is adjusted. Furthermore, in the case of the second multilayer film layer η on the η side, the thicknesses of both the first and second compound semiconductor films are 100 angstroms or less, and preferably 11 gt; 7 〇 page 53 ίΐ (CNS ) Al m% (2) i) χ 297 ν > ^) j -------- Order ------- 1 * · " (Please read the general matters on the back before filling (Writing this page) 4371 03 A? B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (= is better, the better is the most ... 0 Angstrom or less. When the thickness of a single nitride + conductor film ... 00 Below Angstroms, the thickness of the nitride semi-fluorene monolayer can be less than the critical elastic film thickness. Compared with thick films, it can grow into nitride semiconductors with good crystallinity. In addition, if both Below 70 Angstroms, 'the second multilayer film layer 106 on the side may have a superlattice (multilayer film) structure' When an active layer is formed on such a wide film layer with a supercrystalline structure with poor crystallinity The second multilayer film layer 〇06 can be used as a buffer layer, and an active layer with good crystallinity can be grown. In the second embodiment, the active layer 7 of the multiple quantum well structure is composed of In. And Ga nitride semiconductors, which can be formed by WGt ′ (〇α <υ; n-type and p-type are acceptable, but they are half doped, so that the light emission wavelength between the strong bonds is half the light emission wavelength It is better to reduce the amplitude. The active layer 7 can also be doped with n-type or p-type impurities. When the active layer 7 When doped with η-type impurities, compared with the case of non-doped materials, the inter-bond emission intensity can be stronger. When the active layer 7 is doped with p-type impurities, the peak wavelength can be shifted to about The emission peak wavelength is lower than the energy side of 0.5 eV, but the half-value amplitude becomes larger. When the '/ tongue layer 7 is simultaneously doped with n-type or p-type impurities, the luminous intensity of the active layer 7 is comparable. The above is large when doped with a p-type impurity alone. It is worth mentioning that 'when an active layer 7 doped with a p-type impurity is formed', the conductive type of the active layer 7 may be simultaneously doped with Si-type impurities such as Si The whole becomes an n-type. In order to grow an active layer with good crystallinity, it is preferred that it is undoped. The stacking order of the barrier layer and the well layer of the active layer 7 is not limited. It can be started from the well layer and finally the well layer, or from the well layer. Page 54 I — II. -------- ----- ί Please read the notes on the back before filling out this page} 4371 03

V. Description of the invention (The barrier layer was accumulated and finally, or the A Λ layer of the county began to accumulate and finally the well layer.

The thickness of the stratum is 100 angstroms, preferably below 70 angstroms, and more preferably adjusted below 50 angstroms. At m ^ ^ βP and mid-month, the lower limit of the thickness of the well layer is There are no restrictions, but it is best to make the extension t, and the defect is more than I atomic layer, preferably more than 10 Angstroms. When the thickness of the waste layer of the well layer is more than 100 Angstroms, the rotation will tend to be difficult to improve. In addition, the thickness of the barrier layer must be 2000 angstroms or less, preferably 500 angstroms or less, and more preferably 3,000 angstroms or less. In the present invention, the original soundproofing of the barrier layer is # , & 下 Lower thickness limit and iron are particularly limited 'It only needs to have more than 1 atomic layer', but it is best to be 纟! 〇Age or more. If the thickness of the barrier layer is within the range of the upper ic, the roll-out can be easily improved. In addition, in the present invention, the total thickness of the active layer 7 is not limited. It can adjust the stacking number and order of the barrier layer and the well layer according to factors such as the desired wavelength of the LED element and so on. The total thickness of the active layer 7 is adjusted. The consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs is printed in this Embodiment 2. The p-side cover layer is used as a p-side multilayer film cover layer 108 ', which is a third nitride semiconductor with a large bond gap energy. The film 108a ′ and a fourth nitride semiconductor film i08b having a bond gap energy smaller than that of the third nitride semiconductor film i08a are stacked, and the p-type impurity concentration in the two may be different. Can be the same. In addition, in the present invention, the p-side cladding layer may also be composed of a single layer formed by 11 ^ & 1.1 ^ (〇 ^^ 1) containing p-type impurities. The following will first describe the case when the p-side cover layer is a p-side multilayer film cover layer 108 having a multilayer film structure (superlattice structure). Page 4371 03

V. Description of the invention (Printed by the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, if the p-side constitutes the p-side multi-layer film covering layer 10, the first OSa and the fourth argonide main communication sister. The valve Qianfu body film Membrane + conductor film 08b has a film thickness of 100 angstroms or less, and preferably 70 angstroms or less, and a lower one is more preferably 50 angstroms or less, and the third nitride semiconductor The film thickness of the film i0a and the fourth nitride main I # coin * lice compound + conductor film 108b may be the same or especially necessary ^ " each film thickness of the multilayer film structure is in the above range ㈣H nitride The film thickness of the semiconductor can be below the critical elastic film thickness. Compared to thick films, it can grow into a good crystallinity: vapor semiconductor. In addition, the crystallinity of the nitride semiconductor layer is changed. A better 'layer' with a higher carrier concentration and a lower resistivity when P-type impurities are added is preferable, and at the same time, the vf and the initial value of the element can be reduced. The two types of layers are kept in one group, and a multilayer film is formed by stacking them multiple times. The total film thickness of the cap layer 108 can be adjusted by adjusting the thickness of each of the third nitride semiconductor film 〇08a and the fourth nitride semiconductor film 〇08b, and adjusting the number of deposition times. The p-side multilayer The total film thickness of the film cover layer 108 is not limited. It may be below 2000 angstroms, preferably below 1000 angstroms, and more preferably adjusted below 500 angstroms. If the total film thickness is below Within the above range, the light emission output can be increased and the forward voltage (Vf) can be reduced. The third nitride semiconductor film 10sa is a nitride semiconductor containing at least A1, and it is preferably composed of six 丨(10 & 1_1 ^ (〇 < 11 < 1). In addition, the fourth nitride semiconductor layer 105b can be made of, for example, AlpGau pN (〇 < pSl, n > p), InrGa! -RN ( 〇 £ d) Growth of a 2-element mixed crystal or a 3-element mixed crystal semiconductor. The covering layer is a super-lattice-structured P-side multilayer film covering layer on page 56. & State @ disaster standard (CNSM1 regulation U10 «: tear public fan. ^ · ------- order · -------- continued (Please read the intention on the back before filling this page) 437103 Λ7 Economy Intellectual Property Bureau Consumption Cooperation Du printed B7 V. Description of the invention () When the time is 'the crystallinity can be improved' and the resistivity can be reduced and Vf can be reduced. The impurity concentration between the 3 nitride semiconductor WoSa and the fourth semiconductor semiconductor film is different. The impurity concentration on one side is larger, and the impurity concentration on the other side is smaller than the n-side impurity concentration. 1 multilayer film layer 5. In general, when the third nitride semiconductor film having a large bond gap energy has a higher p-type impurity concentration, and the fourth nitride semiconductor film 1Q8b with a smaller bond gap energy has a p-type impurity. When the concentration becomes smaller (or no impurity is added), the starting voltage and vf can be reduced. The opposite is also possible. That is, the P-type impurity concentration of the third nitride semiconductor film 108a with a large bond gap energy is reduced, and the P-type impurity of the fourth porosity semiconductor film 108b with a small bond gap energy is reduced. The density increases. The amount of impurities incorporated into the third nitride semiconductor film 08a is lxl018 / em3 + l02l / cm3 ', and is preferably adjusted in a range of lxlOl9 / Cm3 to 5xl02Q / cm3. If it is less than 1 X 1 018 / cm3 ′, it is the same as the fourth nitride semiconductor film! The difference of 〇8b will become smaller, and therefore, it will be difficult to obtain a layer with a higher carrier concentration. In addition, when its system exceeds 1 × 10 2 / cm3, its crystallinity will deteriorate. In addition, it is preferable that the p-type impurity concentration of the fourth chaotic compound semiconducting chain film 108b is less than that of the third halide compound conductor film 108a, and it is more preferably less than 1/10, and the original is most preferably When no impurity is added, a layer with high mobility can be obtained. However, since the film thickness is very thin, p-type impurities diffuse from the third nitride semiconductor film 108a, so the amount is the best. It is below 1x1020 / cm3. Furthermore, when incorporated in the third nitride semiconductor film with a large bond gap energy 108a page 57 (please read the precautions on the back before filling this page) ------! _Line 4371 03 A7 _________ B7_______ 5. In the description of the invention (), there are fewer P-type impurities, and the fourth nitride semiconductor film 108b with a smaller bond gap energy has more p ^ i impurities. The same is true for those who are P-type impurities, such as Mg, Zn, Ca, Be, etc. Group IIA, π β elements of the periodic table, it is best to use Mg, Ca as p-type impurities. Furthermore, in the nitride semiconductor layer constituting the multilayer film, in terms of the layer in which a high degree of impurity is inserted, it is better in the thickness direction that the impurity concentration near the central portion of the semiconductor is larger. The impurity concentration near the end of the amount is relatively small (preferably in a non-doped state), so that the resistivity can be reduced. Secondly, when the p-side covering layer is constituted by a single layer containing p-type cone 1 " & 1. ((^ 1 ^ 1), then the? -Side single film covering layer The film thickness is less than 2000 angstroms, preferably less than 5,000 angstroms, and more preferably adjusted to 500 to 100 angstroms. If the film thickness is within the upper range, the light emission can be increased. Output and decrease the forward voltage (vf). The composition of the p-side single film cover is AUGat. BN (〇 < b < l) ° However, compared to the P-side cover of the above-mentioned multilayer film structure The crystallinity of the cover layer of this single-film: layer is slightly worse, but it can be made better by combining with the above-mentioned η-side first multilayer film layer 105, and at the same time, the initial value can be improved. In addition, although V f is reduced, in addition, although it is a single film, the combination of the structure with other layers can reduce the performance of the device, and because it is a single film, the process can be simplified, which is helpful. For mass production. Page 58 Wooden paper ift degree; 1} Ten valves pull home! Standard (C: Ns) A.1 grid (7 males of JO X; (Please read the precautions on the back before Fill in this page) I ------ T n 1- t Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 4371 03 V. Description of the invention (The P-type impurity concentration of the P-side single-film coating is It can be adjusted between lxl0l8 / cm3 ~ lxl021 / cm3 'The best range is 5x10, cm3 ~ 5xl02a / cm3, more preferably it is adjusted at ^ i 0 丨 x 1 〇2 Vcm3 If the impurity concentration is within the above range, a good p-type film can be formed. Second, in this embodiment, if the p ， GaN contact layer 9 doped with Mg is a single layer, Then its composition is a two-element mixed crystal nitride semiconductor that does not contain dagger and ai. In the case of a single layer, if it is assumed to contain ln, A !, a good ohmic contact with the p electrode 11 will not be obtained, and The luminous efficiency will decrease. The film thickness of the p-side contact layer 9 is between 0.001 and m, preferably between 0 · 0 1 and 0.3 m, and more preferably between 0.05 and 0 m. ~ 〇2 β ni. When the film thickness is thinner than 0.001; ί ιι, it will be easy to short-circuit with p-type Ga A1N coating layer, and it is difficult to use it as a contact layer. In order to make a different composition 2 yuan The crystalline GaN contact layer is deposited on the ternary mixed-type GaAIN coating layer. "If the film thickness exceeds 0.5 vm, lattice defects are liable to occur in the p-side GaN contact layer 9" and crystallize. In addition, the thinner the film thickness of the contact layer is, the lower the V f is, which can improve the luminous efficiency. In addition, if the p-type impurity system of the p-side GaN contact layer 9 is Mg, it is easier to obtain a P-type Characteristics' are also more accessible to ohmic contact. The concentration of Mg is between UlOu / cm3 to lxl021 / cm3, preferably between 5x1019 / cm3 to 3xl020 / cm3 ', and the more preferable is about lx1020 / cm3. If the concentration of M g is within this range, a good p-type film can be easily obtained, and V f can be reduced. In addition, the η electrode 12 and the p electrode π are respectively formed on the η policy on page 59. -^ (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4371 03 Λ7 B7__ 5. Description of the invention () Side contact layer 4 and p 恻 GaN contact layer 9 The material combination of the electrode 2 and the P electrode 1 1 is limited to J. For example, the n electrode 2 may be W / A1, and the P electrode 1 1 may be Ni / Au. [Embodiment 3] Hereinafter, Embodiment 3 of the present invention will be described with reference to Fig. 5. As shown in FIG. 5, a nitride semiconductor light-emitting device according to Embodiment 3 of the present invention is formed with a buffer layer 202 on a blue quartz substrate 1, and an In-side nitride semiconductor layer is sequentially formed thereon. 203. A 2n-side nitride semiconductor layer 204, a 3n-side nitride semiconductor layer 205, an active layer 7, a p-side cladding layer 108, and a p-side contact layer 208. In the third embodiment, a translucent ρ electrode 10 is formed on the front surface above the ρ-side contact layer 208, and a ρ pad electrode for welding is formed on a portion of the ρ electrode. 1 1 ^ In addition, the surface of the second n-side nitride semiconductor layer 204 is exposed on one side of the light-emitting element, and an n-electrode 12 is formed on the exposed portion. Here, in the nitride semiconductor light-emitting device of Embodiment 3, as shown in FIG. 5, the n-side region 230 is composed of the buffer layer 202, the U-th nitride semiconductor layer 203, the second n-side nitride semiconductor layer 204, And p-side nitride semiconductor layer 205, and p-side region 2 30 is composed of P-side cladding layer 108 and p-side contact layer 208. It is worth mentioning that, in Embodiment 3, the p-side contact layer 2 0 8 is composed of a first nitride semiconductor film 2 8 a and a second gaseous semiconductor film 208 b which are different in composition from each other to form a lattice structure. , The above two nitrogens page 60 mi Κ! Ί ίΐΙίΠΓ | ί | Λ] ';:; ί: ijt (CNS) Al m'! R (310 x: ^ 97) ~ ^ -------- ^ -------- * ^ (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the cooperative 4371 03 Λ7 B7 V. Description of the invention (medium, at least the first nitride The semiconductor film 208a is based on the above-mentioned two nitride car conductor layers including the p-side contact layer 208. The nitride semiconductor film 208a is based on In, and the first nitrogen 208a and the second nitride semiconductor film 208b are intersecting lattices. Structure, so it can form very few defects and crystalline contact layer 208. According to this, compared with the conventional one formed without crystalline InGaN, it can form a resistance that can have good ohmic contact with the p electrode 10 The p-side connection shows that in the third embodiment, the first nitride semiconductor film 208a and the second nitrogen 208b, which are not included in the P-side contact layer 208, are formed. 1] 1st nitride semiconductor film 2nd nitride semiconductor mold-208a 208b 1 InxGai .XN GaN 2 InxGai-× Ν Lilv £ ai.vN (x > y) —3 InxGat .XN • —-- AlzGa 丨., NC0 < z < 1, *-A member of the Wisdom and Time Bureau of the Ministry of Economic Affairs, M Consumer Cooperative, printed the semiconductor layer In. Due to the structure, at least the first compound semiconductor film was stacked and formed a single layer value system with a good p-side lattice structure. : Lower, and the contact layer 208. More detailed information can be obtained from the following Table 1 compound semiconductor film (please read the precautions on the back before filling in this page) Here, #This Embodiment 3 ' InxGaixN system in the first gaseous semiconductor film 208a 'table! The most x is set to x < 0'5, more preferably, it is set to χ < 〇4 X, s. ^, ^ Υ. 4, and the best The person is x < 0'3. Page 61 -------) ϊΰ ϊΰ 尺 哎 适 丨 丨 丨 屮 巴: · * !. (210 ^ ~ 297ΐν »43 710 3 A? ----- -sz ___ V. Explanation of the invention () In addition, in the present invention, 'the thicker the thickness, the higher the resistance value in the thickness direction'. Therefore, the film thickness of the p-type contact layer is preferably less than 〇 丨 P m. Donor line 50 square angstroms or less in the 'donor line and the best set to 2 billion square angstroms or less. Further, for forming the first p-type contact layer! The film thickness of the nitride semiconductor film 208a and the second nitride semiconductor film 208b is preferably 100 angstroms or less, more preferably 70 angstroms or less, and 50 angstroms or less. In fact the best is between 10 and 40 Angstroms. The reason why the thickness of the first vapor semiconductor film 2 a and the second nitride semiconductor film 208 b constituting the p-type contact layer is 100 angstroms or less is that when it exceeds 100 angstroms, each nitride semiconductor layer will Since the film thickness exceeds the elastic bending limit, minute gaps or crystal defects are easily generated in the film, and the effect of the superlattice structure cannot be exhibited. In the present invention, the thickness of the first nitride semiconductor film 208a and the second nitride semiconductor film 208b is at least! Each atomic layer or more is sufficient, but it is preferably set to 10 angstroms or more as described above. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, in the present invention, the first! At least one of the nitride semiconductor film 208a and the second nitride semiconductor film 20813 is doped with impurities such as Mg so that the entire p-side contact layer has p-type conductivity. In addition, when both the n-th nitride semiconductor film 208a and the second nitride-rich conductor film 208b are doped with impurities, the p-type impurity concentration of one of the nitride semiconductor layers is higher than that of the other nitride. The semiconductor layer has a high impurity concentration (hereinafter referred to as modulation doping). As mentioned above, the impurity concentration of one of the first nitride semiconductor film 208a and the second nitride semiconductor film 208b is higher than that of the other __ 621Γ A paper rosette WM-m- 1 Heart ------------------ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4371 03 a? B7 V. Description of the invention () High, For one nitride semiconductor layer, more carriers can be generated, while the mobility of the one with a lower impurity concentration is higher than the one with a higher concentration. Since the carrier density and mobility of the entire superlattice formed by the first nitride semiconductor film 208a and the second nitride semiconductor film 208b are high, the resistance value of the P-side contact layer 208 can be reduced. Therefore, in the nitride semiconductor light-emitting device according to the third embodiment, the p-side contact layer 208 can reduce the forward voltage of a predetermined current value if the modulation doping process is used again. In addition, in the case of the above-mentioned modulation doping, the p-type impurity concentration in one of the nitride semiconductor layers is between Ixl0] 9 / cm3 to 5xl021 / cm3, and the other nitride is doped therein. The concentration of P-type impurities in the semiconductor layer is between 5x10iS / cm3 ~ 5x1019 / cm3, and the impurity amount is preferably less than the amount of the previous argon semiconductor layer (if added to the nitride semiconductor layer) When the P-type impurity in the medium exceeds 5 xlO2 [/ cm3, the crystallinity will be deteriorated ', and the resistance value will be increased, and it will be difficult to obtain a good ohmic contact; when it is less than 5 X 1 〇u / At cm3, a sufficient carrier concentration will not be obtained, and the output will be reduced. In addition, in the present invention, for the P-side contact layer 208, either the first nitride semiconductor film 208¾ or the second nitride semiconductor film 208 b may be an upper layer, and the p-side contact layer 208 may be the upper layer. The contacting layer system may be any one of them. However, in the present invention, the first nitride semiconductor film 208a containing η is located on the uppermost layer, and the p-electrode 10 is formed on the i-th nitride semiconductor film 208a. This makes it possible to reduce the ohmic contact resistance between the p-side contact layer 208 and the P electrode. __ 第 63-r 办 办 t, ¾; ί; 中 丨 销 (2ί0 x 297¾ ^ ------ ----------------- i Order ---- --- i · " {Please read the precautions on the back before filling out this page) Printed by the Consumer Affairs Bureau of the Intellectual Property Bureau of the Ministry of Economic Affairs 4371 0 3 A7 _____ B7 V. Description of the invention () In other words, it is Compared with the second gaseous semiconductor film 208b, the first nitride semiconductor film 208a contains an In component (or more ϊη component), so that the bond gap can be reduced, and the metal constituting the p electrode can be further reduced. The difference between the energy level at the lower end of the conduction band and the energy level at the upper end of the valence electron band of the first nitride semiconductor film 208a is reduced, so that the ohmic contact resistance can be reduced. In the device, the P-side cladding layer may also be formed of a layer formed of AlxGai-xN (0 < x 幺 1) and a layer formed of InyGai_yN (〇 ^ y < l) to form a superlattice structure. At this time, 'the thickness of each layer constituting the P-side cover layer is preferably set to 100 angstroms or less in the elastic bending limit', more preferably 70 angstroms or less, and the most preferable is 50 angstroms or less. In fact, the best is between 10 and 40 angstroms. Accordingly, since the P-side cover layer has a superlattice structure, the resistance value of the P-side cover layer can be reduced. In addition, the total thickness of the P-side cover layer 108 is preferably set between 100 angstroms and 2 μm, and more preferably between 500 angstroms and 1 μm. If the film thickness is set within the above range, it can be used as a good carrier sealing layer, and at the same time, the overall resistance value of the p-side coating layer 108 can be reduced. [Embodiment 4] As shown in FIG. 6A, the nitride semiconductor light-emitting element of Embodiment 4 is the first nitride-rich conductor film 208a and the second nitride semiconductor except for the P-side contact layer 208. Except that a composition gradient layer 208c is added between the films 208b, other components are the same as those in the third embodiment. Here, the so-called page 64 ts H (CNS) Al (2l ·: χ m) ------------ 1 M in ----- 11 --- line (please read first Note on the back page, please fill in this page again) A7 B7 4371 03 V. Description of the invention () Composition sample layer 2 〇 8 c refers to the composition of the first nitride semiconducting film 2 〇 $ a a Chaodian second nitrogen The composition of the compound semiconductor 208b is such that its composition gradually changes continuously in the thickness direction. For example, when the first nitride semiconductor film 208a is InxGaHN and the second nitride semiconductor film 208b is GaN ', as shown in FIG. 6B, for the composition gradient (slope) layer 208c, The composition ratio (X) of I η is determined from the surface of the first nitride semiconductor film 208a connected to the surface of the second nitride semiconductor film 208b that is adjacent to the first nitride semiconductor film 208a, that is, the thickness is gradually reduced in the thickness direction. In the aspect 4, the composition ratio (x) of In in the composition gradient layer 208c is only required to be gradually reduced, and its composition with respect to the thickness does not necessarily change linearly as shown in FIG. 6B. In the nitride semiconductor device according to the fourth embodiment configured as described above, the interface composition between the first nitride semiconductor film 208a and the second nitride semiconductor film 208b is continuous, so that during layer growth At the interface between the first nitride semiconductor film 208a and the second nitride semiconductor film 208b, segregation of a specific element can be prevented. Accordingly, since segregation of a specific element can be prevented, the first nitride semiconductor film 208a and the second nitride semiconductor film 208b with less crystal defects can be grown. In the case where the first nitride semiconductor film 208a is InxGauxN and the second nitride semiconductor film 208b is GaN, the first nitride semiconductor film 208a and the second nitride semiconductor film 2 can be prevented. The segregation of in between 〇8b allows good crystallinity to be obtained. Page 65 -------- Order ----- I ---- line f clear first read the > I matter on the back and then fill out this page) printed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs

AT

437103 V. Description of the invention (Embodiment 5) The following is a description of the embodiment "I5 semiconductor device of the fifth embodiment" according to the present invention, which is explained by using a schematic sectional view shown in FIG. As shown in FIG. 8, the embodiment of the lice compound semiconductor element β «

-Substrate! A buffer layer 102, an undoped GaN layer m, an n-type impurity-doped η-side contact layer 4, and a lower layer 3 05a and an n-doped layer are sequentially deposited on the top. The impurity intermediate layer 305b and an undoped upper layer 305C are formed on the n-side i-th multilayer film 305, and are formed by the first nitride semiconductor film 3G6a and the second nitride semiconductor film η-side second multilayer film layer 306, _active layer 7 of multiple quantum well structure, ρ-side multilayer film formed of ytterbium 3 and fourth nitride semiconductor film

A cover layer 108 (or a single film cover layer 108), and a Mg-doped p-side GaN contact layer 9. Furthermore, on the contact layer 4 ± and the p-side ㈣ contact layer 9, n-electrodes 12 and a p-electrode 丨 i are formed respectively. Here, in the nitride semiconductor light-emitting device of this embodiment, As shown in FIG. 5, the n-side region 330 is composed of a buffer layer! 〇2, undoped GaN layer 103, n-side contact layer 4, n-side first multilayer film layer 105, and n-side first layer 2 is composed of a multilayer film layer 306, and the p-side region 34 is composed of a p-side cover layer 108 and a p-side GnN contact layer 9 3 In this embodiment S, it can be used as a substrate. Quartz C-plane, R-plane, A-plane blue quartz as the main surface, or an insulating substrate such as spinel (MgAl204), or SiC (containing, 4H, 3C), Si, ZnO, GaAs, GaN, etc. In the fifth embodiment, the buffer layer 10 is a GadA1 ^ ------------ installed. --- > ~ (Please read the notes on the back before filling out this page) The 66th paper printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs meets the filg household standard {cus) Mkk ~ (m7 ^^^ Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau 4371 03 Λ / __ __B7 V. Description of the invention (iN (d is in the range of 0 < dsi)) nitride semiconductor, in which the smaller the ratio of A1 to 洌, the more significantly the composition of the crystallinity, so the buffer The layer 102 is preferably composed of GaN. The film thickness of the buffer layer 102 may be between 0.002 and 0.5 " m, and is preferably adjusted between 0.005 and 0.2 " m, and more preferably between 〇, 〇1 ~ 0.02μιη. If the film thickness of the buffer layer 10 is adjusted within the above range, the crystallinity of the nitride semiconductor will be improved, and the growth of the nitride layer will be further improved. The crystallinity of the nitride semiconductor is improved. The growth temperature of the buffer layer 102 is between 200 and 900 degrees C, preferably adjusted between 400 and 800 degrees C. When the growth temperature is within the above temperature range In this case, the system can form a good complex crystal, and using the complex system as a seed crystal, the crystallinity of the nitride semiconductor grown on the buffer layer 102 will be improved. Depending on the type of substrate and the growth method The difference is that the above-mentioned buffer layer 102 formed at a low temperature can be omitted. 'In Embodiment 5, the undoped GnN layer 103 is a layer which is not added with an n-type impurity when grown. If the undoped GnN layer 103 is grown on the buffer layer 1 〇 2 At this time, the crystallinity of the undoped GnN layer 103 will be good, and the crystallinity of the n-side contact layer 4 and the like grown on the undoped GnN layer 103 will be improved. The film thickness of the undoped GnN layer 103 is more than 0.01 / zm, preferably 0.5 # m or more, and more preferably 1 " m or more. When the film thickness is in the above range Time 'will allow the layers after the n-side contact layer 4 to grow with good crystallinity. In addition, the film thickness of the undoped GnN layer 103 is not one page 67 -------- I --- ^ --------------------- --Line I (碕 Read the notice on the back before filling out this page) Printed by the Consumer Cooperatives of the Wisdom and Time Bureau of the Ministry of Economic Affairs; 43 710 ^ a? --——____ m _ V. Description of the invention () 疋 Upper limit, which is The manufacturing efficiency can be considered and adjusted appropriately. Next, in Embodiment 5, [the concentration of the n-type impurity contained in the n-type impurity Mn-side contact layer 4 is 3 x 丨 〇, ⑽ 3 or more, and preferably 5 x 1 Wcm3 or more. When a large amount of the n-type impurities are incorporated and this layer is used as the n-side contact layer, vf and the initial value can be reduced. When the impurity concentration is out of the above range, it is difficult to reduce Vf. In addition, when the η-side contact layer 4 is formed on the undoped SiO 111 layer 103 having a small n-type impurity concentration and good crystallinity, whether or not the system has a high-concentration n-type impurity, it also May have good crystallinity. Although the n-type impurity of the n-side contact layer 4 does not have a certain upper limit, it is preferable that its upper limit concentration is 5 x 〇2! / Cm3 or less in order to hold its function as a good contact layer. The composition system of the π-side contact layer 4 may be composed of IneAiGai e-fN (〇se, osf, e + fs I). Its composition is not limited, but it is a nitride semiconductor layer with less crystal defects. 'It is preferably GaN or AlfGa and fN having an f-number of 0_2 or less. In addition, although the film thickness of the n-side contact layer 4 is not limited, since it is a layer for forming an n electrode, its film thickness is between 0.1 to 2 0 am Preferably, it is preferably between 0.5 and 1 0 " m, and more preferably between 1 and 5 and m. When the film is in the above range, the resistance value can be reduced and the forward voltage of the light-emitting element can be reduced. In addition, if the η-side first multilayer film layer 305 system described later is formed as a thick film, the η-side contact layer 4 system can be omitted. Next, in the fifth embodiment, 'the η side first multilayer film layer 305 series. _ Page 68 paper-like paper; β t Guan Jiali (CNSXKTSY-public) * ----------- -I— I ^ --------- !? 1 ------ 4 I (Please read the unintentional matter on the back before filling out this page) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 ____B7 V. Description of the invention () It consists of at least three layers, such as a bottom layer 305a from the substrate side, an intermediate layer 305b with an n-type impurity, and an undoped upper layer 305c. Although each of the layers constituting the first η-side first multilayer film layer 305 may not directly affect element characteristics such as electrostatic withstand voltage, the η-side first multilayer film layer 30 may be formed by combining the respective layers. 5, it can obviously improve the characteristics of the entire device 'especially light output and electrostatic withstand voltage. In fact, this effect was something unexpected when the layers were stacked to manufacture the element. In other words, the present invention was completed by finding this effect. Here, the n-side first multilayer film layer 305 may include layers other than the lower layer 305a to the upper layer 305c. In addition, the first multilayer film layer 305 on the η side may be directly adjacent to the active layer, or there may be other layers between the active layers. The nitride semiconductors constituting the lower layer 305a to the upper layer 305c may be gaseous semiconductors of various compositions represented by IngAlhGai, g.hN (0sg < l, 〇Sh < l), and preferably are composed of GaN. By. In addition, each of the n-side first multilayer film layers 305 may be the same or different. The film thickness of the first multilayer film layer 305 on the π side is not limited, and it may be 175 to 12000 angstroms, preferably 10,000 to 丨 100,000 angstroms, and more preferably 2000 angstroms. ~ 6000 Angstroms. If the n-side first multilayer film layer 305 is within the above range, it has the advantages of optimizing Vf and improving the electrostatic withstand voltage. The film thickness adjustment of the η-side first multilayer film layer 305 having the above-mentioned film thickness can be adjusted by adjusting the lower layer 305a, the middle layer 305b, and the upper layer 305c. 69 (this paper size is in use) Standard half (c > :: S) a7 ^ (210 X: .Ό7) " '— --- ί — ^ 1 ^^ 1 —ί — ^ in Bn V IP% ϊ In flu n 1 ^ 1 I ( (Please read the notes on the back before filling in this page) A7 4371 03 -------- Si ___- 5. Description of the invention () and other film thicknesses, so that the film thickness of the η 恻 first multilayer film layer 305 is located above Within range. In addition, in the fifth embodiment, although the thicknesses of the respective layers such as the lower layer 305a, the intermediate layer 305b, and the upper layer 305c constituting the n-side first multilayer film layer 305 are not limited, in the present invention, it is Since the optimum range of the film thickness of each layer was determined, the following experimental review was performed. (1) Review 1 The film thickness of the lower layer 305a is set to 3000 angstroms, and the film thickness of the intermediate layer 305b is set to 350 angstroms. At the same time, the film thickness of the upper layer 305c is sequentially changed to produce LED elements 'simultaneously' for each element ( Each film thickness) was measured for its forward voltage, light emission output, and electrostatic withstand voltage characteristics. The results are shown in Figs. 9A and 9B. (2) Review 2 The film thickness of the lower layer 3 05a is set to 3 000 angstroms, and the film thickness of the upper layer 305c is set to 50 angstroms. At the same time, the film thickness of the intermediate layer 305b is sequentially changed to produce LED elements. At the same time, for each element ( Each film thickness) was measured for its forward voltage, light emission output, and electrostatic withstand voltage characteristics. The results are shown in Figures 10A and 10B. (3) Review 3

The thickness of the middle layer 305b is 350 angstroms, and the thickness of the upper layer 305c is 50 angstroms. At the same time, the film thickness of the lower layer 305a is sequentially changed to produce LEDs. ) A4 rules 丨; ⑵ !.) X: 29? Exchange) ~~ ------------------ -nnni · nn If DI I》 DJ I nnnn I (Please first Read the notes on the back and fill in this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Yin Yi 4371 03 B7______ V. Description of the Invention Film thickness) was measured for its forward voltage, light emission output, and electrostatic withstand voltage characteristics. The results are shown in Figure ΠA and Figure I1B. In addition, each LED element produced in this review is in addition to the η side! Except for the film thickness of each of the multi-layer film layers 305, the conditions were the same as those of Example 34 described later. The characteristics shown in Figures 9α to ηB are characteristics of a conventional LED element for comparison with Example 34. In Figs. 9A to 11B, p0 is a light emission output, and vf is a forward voltage. From the results of the above review, it can be known that the film thickness of the lower layer 305a without impurities is 100 to 100 Angstroms, preferably 50 to 80 Angstroms, and more preferably 1,000 to 5,000 Angstroms. Aye. As shown in FIG. 11A and FIG. IiB, although the film thickness of the underlayer 305a that is not earning impurities gradually increases, its static pressure-resistance performance increases, but it reaches around 1,000 angstroms. The vf system rises rapidly; when the film thickness becomes thin, the Vf system slowly decreases, but it will increase the decrease of the electrostatic withstand voltage. The inventor of the present case found that when the voltage is less than 100 angstroms, the yield will be greatly reduced as the electrostatic withstand voltage decreases. In addition, 'because the lower layer 305a focuses on improving the η-side contact layer 4 containing η-type impurities. The effect of low crystallinity is, therefore, it is desirable to grow it to a film thickness that can achieve an improvement in crystallinity. The film thickness of the intermediate layer 305b doped with n-type impurities is 50 to 100 angstroms, preferably 100 to 500 angstroms, and more preferably 150 to 4,000 angstroms. The impurity-doped intermediate layer 305b is used as a layer that has a sufficient carrier concentration and a large light emission output. 'If this layer is not formed, the light emission output will be obvious on page 71. --------------^ 1-. ^ 1. ^ 1 .1 I 9 I n If ».0 ^. ^ 1 nnm. ^ 1 i I n- n I tin I: n II n 1 (Please read the notes on the back before filling this page) --_ Λ7 4371 Ο 3 V. Description of the invention (

drop. In addition, as shown in FIG. 10A, since the light emission output of the mountain .λ B ^ decreases even if the film thickness is as thin as about 25 Angstroms—point by point, when the film thickness of the intermediate layer 305b is 50 Angstroms 1 The luminous output liquid should not fall out, so the film thickness of other layers can be adjusted accordingly. In addition, as shown in Figure 10A and 1A of solid research, when the film thickness exceeds 1,000 angstroms, the light output tends to decrease w. On the other hand, as shown in the first drawing, only the electrostatic withstand voltage is looked at. The thicker the intermediate layer, the thicker the mold thickness, the better the electrostatic withstand voltage system. However, when the thickness is less than 50 Angstroms, the electrostatic withstand voltage system drops significantly. Propensity. The film thickness of the undoped upper layer 305c is 25 to 1,000 angstroms, preferably 25 to 500 angstroms, and more preferably 25 to 150 angstroms. The top layer 305C is not holding impurities! The closest to the active layer in the multilayer film has a great relationship with the prevention of leakage current ', and when the film thickness of the upper layer 305c lies. Below Angstrom, the leakage current tends to increase. In addition, as shown in Figs. 9a and 9B, if the film thickness of the upper layer 305c exceeds 1,000 angstroms, Vf will increase and the electrostatic withstand voltage system will decrease. As mentioned above, in the above, the focus is on element characteristics that are susceptible to changes in the film thickness of each of the lower layer 305a to the upper layer 305c. If the lower layer 305a, the intermediate layer ?? 5b, and the upper layer 305 When C is combined with each other, the characteristics of all the elements are improved substantially uniformly. However, in order to improve the light emission output and the electrostatic withstand voltage and to meet the more demanding specifications, the thickness of each film can be specified within the above range. That can make the light output better, and at the same time can further improve the reliability of the product. In addition, 'to obtain the best effect, the film thickness of each layer of the first multilayer film layer can be changed according to the type of light emitting wavelength of the active layer composition and electrode' led ----------- equipment --- ----- Order --------- Floor * (Please read the notes on the back before filling out this page) Printed on page 72 by the Economic and Intellectual Property Bureau Staff Consumer Cooperative M!:. ) H f Now A (2 丨 0 > 197 4371 03 A7 R7 Member of the Ministry of Health and Human Services Bureau x Printed by Consumer Cooperatives V. Description of the invention (elements and other conditions should be adjusted appropriately. The performance of the combination of the film thickness of each layer is The film thickness in the above range can be appropriately combined to have a better light output and electrostatic withstand voltage than those skilled in the art. The composition of each layer constituting the first multilayer film layer can be IngAlhGai.g_hN (OSg < 1, 0sh < i) to represent 'and the composition of each layer can be the same or different, where the ratio of In, A1 is as small as possible, and it is best to be formed of GaN. Incorporating the first multilayer The concentration of the η-type impurity in the intermediate layer 305b of the film layer is not limited, but it can be 3 X 1 018 / cm3, and it is preferably adjusted to 5xl iS / cm3. The upper limit of the n-type impurity concentration is not limited, but it is preferably below 5 × 1021 / cm3, so that crystallinity does not deteriorate. If the impurity concentration of the intermediate layer 305b of the first multilayer film layer is When it is in the above range, the luminous output can be increased, and V f can also be decreased. As the n-type impurity, it can be group IVB and VIB of the periodic table such as s 丨, Ge, se, δ, 〇, etc. For the n-type impurity, si, Ge, and s are preferred as the n-type impurity. In addition, for the interface of the first multilayer film layer 305, if it does not hinder the function of each layer and element, This system may have both layers. Second, in the fifth embodiment, the second multilayer film layer 3 on the n side is composed of a first nitride semiconductor film 306a containing In, and The composition of the second nitride semiconductor film is different from that of the first nitride semiconductor film 306a. In addition, the first nitride semiconductor film 306a or the second vapor semiconductor film 306b is deposited. Towel, at least-the thickness of the square page 73 i Please read the notice on the back before filling in this page}

it nnnnn ”_OJ un I 4371 03 A7 V. Description of the invention (It is 100 Angstroms or less, and it is preferable that the i-th nitride semiconductor film 306a and the second nitride semiconductor mold 306b are both 100 Angstroms. The following 'better is less than 70 angstroms, and more preferably less than 50 angstroms. The thinner the film thickness, the more the multi-layered film layer will form a superlattice structure, which will improve the crystallinity of the multi-layered film layer.' When the thickness of at least one of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b is less than or equal to 100 angstroms, the thin film layer can be made less than the elastic critical film thickness. The crystallinity is improved, and the crystallinity of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b deposited thereon is also improved, and the crystallinity of the entire multilayer layer is improved, so it can be improved. The output of the device. In addition, if the thickness of the first nitride semiconductor film 306a or the second vapor semiconductor film 306b is less than 100 angstroms, the elasticity of the single nitride semiconductor film 306a or the second gaseous semiconductor film 306b is all within a single layer of the nitride semiconductor. Below the critical film thickness compared to When a thick film is grown, or when the thickness of one of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b is 100 angstroms or less, it can grow into a crystal with good crystallinity. A halide semiconductor. In addition, if both are below 70 angstroms, the n-side second multi-layer film layer 306 is a superlattice structure. If the active layer is grown on the multilayer structure with good crystallinity In this case, the η-side second multilayer film layer 306 can be used as a buffer layer, so that the active layer can be grown with better crystallinity. In the fifth embodiment, the η-side region 3 3 0 should be Including the combination of the first η-side first multilayer film layer 305 and the η-side second multilayer film layer 306, the luminous output can be increased, and Vf can be reduced. The reason is not clear. ---- 4 ill 'i < ^ -i: fii (CN ^ i) Al (Please read the notes on the back before filling out this page) Install --- I ---- Order --------- ^ Economy Zou Printed by the Intellectual Property Bureau's Consumer Cooperatives " Printed by the Ministry of Economic Affairs and Intellectual Property Bureau's Consumer Cooperatives' printed 4371 03 Α7 Β7 V. Invention Description () Chu, but it can grow in η 于The active multilayer crystallinity on the second multilayer film layer 306 is improved. In addition, at least one of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b of the second multilayer film layer 306 on the η side may be at least one thickness. The thickness of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b is different or the same as that of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b. However, at least one of the thicknesses of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b is different. It is preferable that the thickness of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b is close to each other. In addition, the difference between the film thickness and the adjacent layer means that when the multilayer film layer is composed of a plurality of first nitride semiconductor films 3 06a and a second nitride semiconductor film 306b, the second nitride semiconductor film The film thickness of 306b (the first nitride semiconductor film 306a) is based on the thickness of the first nitride semiconductor film 306b (the second nitride semiconductor film 306b) sandwiching the second nitride semiconductor film 306b. Different meaning. For example, when the first! When the nitride semiconductor film 306a is inGaN and the second nitride semiconductor film 306b is GaN, the film thickness of the InGaN layer between the layer and the GaN can be closer to the thickness of the active layer, or The thinner the closer to the active layer, the more the refractive index inside the multilayer film layer can be changed, so that a layer whose refractive index changes sequentially can be formed. In other words, it has substantially the same effect as forming a nitride semiconductor layer with a composition gradient. According to this', for a component that must form a laser-guided optical waveguide path, S, it is possible to form a waveguide path with 1¾ layers, thereby adjusting the mode of the laser light. The 7S paper scale igffl t Gujia β 芈 (CNS) A:] & 丨 ---------------------------- ---------- ----------- -------- Order --------- 0 (Please read the notes on the back before filling (This page) 4371 03 Λ7 —__ — I ι β7 V. Description of the invention () Furthermore, 'the above! At least one of the nitride semiconductor film 306a or the second nitride semiconductor film 306b is composed of the same Group 1 element, and the composition may be different or the same as that of the first nitride semiconductor film 306a or the second nitride semiconductor film in close proximity. 306b. However, at least one of the first nitride semiconductor film 306a or the second nitride semiconductor film 306b is composed of the same Group 111 element, and the composition is different from that of the first nitride semiconductor film 306a or the first nitride semiconductor film 306a. The 2 nitride semiconductor film 306b is preferable. The difference in composition means that when the multilayer film layer is composed of a plurality of first nitride semiconductor films 306a and second nitride semiconductor films 306b, the second nitride semiconductor film (the first nitride semiconductor film) The composition ratio of the group element has a different meaning from the composition ratio of the group π element of the first nitride semiconductor film (second nitride semiconductor film) sandwiching the second nitride semiconductor film ^ For example, 'When the same group Πΐ The composition of the elements is different from each other, and the first! When the nitride semiconductor film 306a is made of InGaN and the second nitride semiconductor film 306b is made of GaN, the In composition system of the InGaN layer located between the GaN layer and the GaN layer can be closer to the active layer, or closer to the active layer. The fewer active layers 'according to this', the refractive index inside the multilayer film layer can be changed, and a nitride semiconductor layer with a composition gradient can be formed substantially. As the composition of In decreases, the refractive index tends to decrease. As shown in FIG. 8, the n-side nitride semiconductor layer for sandwiching the active layer 7 and located below the active layer 7 includes an n-side second multilayer film layer 306. The n-side second multilayer film layer 306 is composed of A first nitride semiconductor film 306a containing In and a composition different from that of the first nitride semiconductor film on page 76 (CNSM.1 ^ Grid < 21 (^ 297) > — (Please read the note on the back? Matters before filling out this page} —————————————————————— Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 4371 03 A : ------ B7__ 5. Description of the invention () 3 The second nitride semiconductor film 306b of 06a is deposited. As far as the n-side second multi-layer mold layer 306 is concerned, its first nitride is The semiconductor film 3 06a and the second nitride semiconductor film 3 0 6b are each formed with at least one layer or more, a total of two layers, or three or more layers, preferably two or more layers, and a total of four or more layers. The η-side second multilayer film layer 306 may also be provided separately from the active layer, but it is preferably provided adjacent to the active layer. When the active layer is adjacent to the active layer, the output can be easily improved. . When the second multilayer film layer 3 0 6 on the η side is bonded to the active layer 7, the layer contacting the initial layer (well layer or barrier layer) of the active layer may be the first nitride semiconductor film 306 a or In the second nitride semiconductor film 30, the order in which the η-side second multilayer film 306 is stacked is not particularly limited. In addition, although the η-side second multilayer film 306 is bonded to FIG. 8 This active layer 7 is, however, a layer formed of another n-type nitride semiconductor may be provided between the second multilayer film layer 306 on the n-side and the active layer 7. This is printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs. The first nitride semiconductor film 306a is a nitride semiconductor containing 1 η, which may be a ternary mixed crystal inkGai kN (0 < k < 1), or an inkGai-kN with a k value of 0.5 or less. Or, the k value is preferably IiuGa ^ N below 0. The second nitride semiconductor film 306b is not limited as long as its composition is different from that of the first nitride semiconductor film 306a. However, in order for the second nitride semiconductor film 3 06b with good crystallinity to grow, its shoulder is a bond gap energy ratio t-th nitride semiconductor. & InmGaumN㈣m < 1, m < k), which is a larger 2- or 3-ternary mixed crystal, and is preferably S GaN. If it is GaN, a whole crystal can be grown. Inversion is applicable κ; a home; ten --------------------------------------- -— Printed by the Intellectual Property Bureau of the Ministry of Economy, M Industrial Consumer Cooperative, 4371 03 __

AT ____ B7 __ 5. Description of the invention () Multi-layer film with good properties. Therefore, a preferred combination is that the first nitride semiconductor film 306a uses InkGa | -kN (0 < k < l) 'and the second nitride semiconductor film I06b uses InmGa and mN (0sm < l M < k) or GaN; The best combination is: the first nitride semiconductor film 306a uses an ink (3a bkN 'with a k value of 0.5 or less, and the second nitride semiconductor film 106b uses GaN. 〇 In addition, both the first nitride semiconductor film 3 06a and the second nitride semiconductor film 306b are non-doped, or both of them are doped with n-type impurities, or only one of them is doped (tuned). (Variable doping). However, in order to further improve the crystallization performance, it is better to be undoped, and the second best is to modulate the doping, and the second is to do both. When both are doped with η In the case of the n-type impurity, the n-type impurity concentration of the first nitride semiconductor film 306a may be different from that of the n-type impurity of the second nitride semiconductor film 306b. Also, as the n-type impurity, it may be si, Ge, Sn, S and other group ϊν or νι group elements, it is best to use Sl, Sn as η-type impurities. = In addition, when doped with η-type impurities, its impurities The degree is best adjusted below Sxl021 / cm3, and the better is adjusted below 5x0 2a / cm3. If it exceeds 5xl02Vcm3, the crystallinity of the nitride semiconductor layer will be deteriorated to the right and the output will be decreased. The same applies to the case of modulating the dopant. In the fifth embodiment, the active layer of the multiple quantum well structure is a nitride semiconductor containing In and Ga. (叱 a < 1} formed; both n-type and p-type are acceptable, but it is better to use a non-complex 3 quality & 1_ to make the half-value amplitude line of the emission wavelength of the stronger bond light smaller. And the active layer 7 can also be replaced with n-type or p-type impurities. When the active layer 7 earns two__781 ----------------------- --------------- ί Please read the unintentional matter on the back before filling out this page). II ---- II 丨-*-11 --- 111 —-- Slow 437103 Λ7 B7 V. Description of the invention (In the case of type impurities, the luminous intensity between the bonds can be stronger than that in the case of undoped materials. When the active layer 7 is doped with p-type impurities, the peak wavelength can be shifted to about 0.5eV energy side lower than the peak wavelength of the inter-bond emission peak, but its half-value amplitude is Large. When the active layer 7 is doped with n-type or p-type impurities at the same time, the luminous intensity of the active layer 7 can be greater than that when the p-type impurities are doped alone. It is worth mentioning that when forming a doped with When the active layer 7 is a p-type impurity, the conductive type of the active layer 7 can be doped with n-type impurities at the same time to make the whole into an n-type. It is best to grow an active layer with good crystallinity. Department is not doped. The stacking order of the barrier layer and the well layer of the active layer 7 is not limited, and it can start from the well layer and finally the well layer, or from the well layer to the barrier layer, or from the barrier ^ ^ Layer, or from the barrier layer began to accumulate and finally the well layer. The thickness of the well layer is less than or equal to 70 Angstroms, and preferably is less than or equal to 70 Angstroms, and more preferably, it is adjusted to less than or equal to Angstroms. In the present invention, the lower limit of the thickness of the well is not limited, but it is preferably at least 1 atomic layer, more preferably at least 10 angstroms. When the thickness of the plutonium layer is more than Jb 100 Angstroms', the output tends to be difficult to improve. In addition, the thickness of the barrier layer must be 2,000 angstroms or less, preferably 500 angstroms or less, and more preferably 300 angstroms or less. Further, in the present invention, the lower limit of the thickness of the barrier layer is not particularly limited, and it is sufficient if it is 'above the atomic width', but it is preferably ... 0 angstrom or more. If the thickness of the barrier layer is within the above range ', the output can be easily improved. In addition, in the present invention, the total thickness of the active layer 7 is not limited in any way, and it is a private paper standard on the page 79 that meets the Chuanzhongchi Ansi (CNS) / V 丨 specifications (Magic () X 297) (Please read the precautions on the back before filling out this page) Install --------- Order --------- Employee Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by employee consumer cooperatives 4371 〇3 --------- Q7 V. Description of the invention () The factors such as the expected wavelength of led components can be adjusted to adjust the number of stacking layers and stacking layers of the barrier layer and the well layer. The total thickness of the active layer 7 is adjusted. In the fifth embodiment, the p-side cladding layer I 08 is composed of a third nitride semiconductor film having a large bond gap energy, and a third nitride having a bond gap energy ratio. The fourth nitride semiconductor film with a small semiconductor film is stacked, and the P-type impurity concentration in the two may be different or the same. In addition, in the present invention, the P-side cladding layer may also contain P-type impurities. Is composed of a single layer formed by AlbGai.bN (0 ^ bSl). The following is the first explanation about when the p-side cover layer 1 08 is a A case where a p-side multilayer film cover layer having a multilayer film structure (superlattice structure) is included. The film thickness of the third nitride semiconductor film and the fourth nitride semiconductor film constituting the mp 恻 multilayer film cover layer 108 is between It is less than or equal to 70 Angstroms, and preferably is less than or equal to 70 Angstroms, and more preferably is adjusted to less than 50 Angstroms, and the film thickness of the third nitride semiconductor film and the fourth nitride semiconductor film may be the same or different. When each film thickness of the right multilayer film structure is within the above range, the film thickness of each nitride semiconductor can be below the elastic critical film thickness, and it can grow into a crystal compared to the case of a thick film. In addition, since the nitride semiconductor layer has better crystallinity, when P-type impurities are added, P with a higher carrier concentration and lower resistivity can be obtained. At the same time, the Vf and the initial value of the device can be reduced. The two types of layer systems with the above film thicknesses are _groups, and they are stacked multiple times—multilayer film layers. Therefore, the P-side multilayer film cover layer The total film thickness of 1 08 can be adjusted by adjusting the third nitride semiconductor film and 帛 4. Each film of a compound semiconductor film ____ page 30 people 5k people J Ai W China Net 丨 I Parasol (CNS) A: 1.,: ¾ ----------------_____ — — — — — — — — — — — — Install -------— Order ------- I i (Please read the precautions on the back before filling out this page) Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the cooperative, A371 03 A7 -------V. Description of the invention () Thickness, and the number of accumulating piles can be adjusted. The total thickness of the p-side multilayer concrete cover 108 is not limited. It can be less than 2000 Angstroms ', and preferably 1,000 Angstroms or less, more preferably, it is adjusted below 5,000 Angstroms. If the total film thickness is within the above range, the luminous output can be increased' and Reduce the forward voltage (Vf). The third nitride semiconductor film is a nitride semiconductor containing at least A1, and it is preferably grown from AlnGaunNCtKnSl). In addition, the fourth nitride semiconductor layer can be grown from a binary or ternary mixed-type nitride semiconductor such as AlpGai.pN (0 < pSl, n > p), IruGa ^ rNiO ^ d). If the p-side cladding layer 108 is a p-side multi-layer film with a superlattice structure, the cladding layer may be improved, the resistivity may be reduced, and Vf may be reduced. If the p-type impurity concentration between the third nitride semiconductor film and the fourth nitride semiconductor film of the P-side multilayer film cover layer 108 is different, the impurity concentration of one of them is larger and the impurity concentration of the other is smaller. When the p-type impurity concentration of the third nitride semiconductor film having a large bond gap energy is increased, and the p-type of the fourth argon semiconductor film having a small bond gap energy is the same as that of the n-side cladding layer, When the impurity concentration becomes smaller, the starting voltage and Vf can be reduced. Conversely, the p-type impurity concentration of the third nitride semiconductor film having a large bond gap energy is reduced, and the p-type impurity concentration of the fourth nitride semiconductor film having a small bond gap energy is increased. The impurity amount to be incorporated in the third nitride semiconductor film is lx 1018 / cm3 to lxl02, / cm3 ', and it is preferably adjusted to be in a range of lxl019 / cm3 to 5xl02 () / cm3. If it is less than Akira '81 ΈΓ -mi1 · ', the standard half-scale (2 Chuan χ 297 Gong 茇) ~ · ~ ~-11-— — — — —---------- order- --- 11 --- * 5 ^ I (Please read the intentions on the back before filling in this page) Α7 4371 Ο 3 V. Description of the invention (1 X 1 Ο 18 / c m3, Bei | J Banque Flute 4 — 〖Xingfeidi 4 oxide semiconductor film will become smaller, so 'it will be difficult to obtain-carriers'. The layer with a larger degree of violation, in addition, when its system exceeds 1; < 1 021 / When c m3, the weight may be deteriorated. In addition, the p-type impurity concentration of the fourth nitride semiconductor film is preferably less than that of the third nitride semiconductor film, and is preferably less than Above ln〇. Originally, it is best to obtain a layer with higher mobility when no impurity is added, but since the film thickness is very thin, it will diffuse from the third nitride semiconductor p-type impurity 1 The amount is preferably lxl020 / cm; or less. Furthermore, when the energy of the bond gap is larger, the p-type impurity in the third nitride semiconductor film is less, and the bond gap is added. P-type in the fourth nitride semiconductor film with low energy The same is true when there are many impurities. Those who are P-type impurities can be Group IIA and Group IIB elements of the periodic table such as Mg, Zn, Ca, Be, etc., and it is best to use Mg and Ca as p-type impurities. Moreover, in a nitride semiconductor layer constituting a multilayer film, a layer doped with a high concentration of impurities is better in the thickness direction because the impurity concentration near the central portion of the semiconductor is larger, and the amount The impurity concentration near the end is small (preferably in a non-doped state), so that the resistivity can be reduced. Secondly, when the p-side cover layer 1 08 is made of AUGayNiOSbU containing p-type impurities, When the formed single layer is formed, the film thickness of the p-side single film cover layer is less than 2000 angstroms, and preferably it is less than 1,000 angstroms. Less than 100 angstroms. If the film thickness is within the above range, 'the luminous output can be increased' and the forward voltage (Vf) can be increased.

.Ill (cInS) AI is used for paper scale (please read the precautions on the back before filling this page). III--11 1111 ---- i _ Printed by the Economic but Intellectual Property Bureau Employee Consumption Cooperative 437103 A7 B7 V. Description of the invention (decreased. The composition of the P single film cover layer 108 is AUGai-bN (OSbSl). However, compared to the p layer cover of the above-mentioned multilayer film structure, The crystallinity is slightly worse, but the crystallinity can be improved by the combination with the first multilayer film 305 on the η side, and at the same time, the initial value and the decrease can be achieved. In addition, although it is single The film can be combined with other layer structures to reduce the performance of the device, and because it is a single medium, the process can be simplified, which is helpful for mass production. The P-side single film cover layer 108 The concentration of the p-type impurity can be adjusted at lxl0ls / cmJ ~ lxi〇21 / c nr (It is best to read it on the back of the page and then fill out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

SxloU / cm · 5 to 5xl02Vcm3, more preferably, it is adjusted to a range of 5xl109 / cm3 to lxl20 / cm3. When the impurity concentration is within the above range, a good p-type film can be formed. Next, in the fifth embodiment, if the p-side GaN contact layer 9 doped with Mg is a single layer, its composition is a binary mixed crystal nitride semiconductor that does not include In and A1. In this case, if it is assumed that In and Al are contained, good ohmic contact with the p electrode 11 will not be obtained, and the vertical luminous efficiency will decrease. The film thickness of the P-side contact layer 9 is between 0.001 and 0-5 Vm, preferably between 0.0 1 and 0.3 #m, and more preferably between 0.05 and 0.2 gm. When the film thickness is thinner than 〇〇〇ι # ηι, it is easy to short-circuit with the p-type GaAlN coating layer 'and it is difficult to use it as a contact layer. In order to deposit a ternary mixed crystal GaN contact layer with a different composition on the ternary mixed crystal GaA1N cover layer, if the thickness of the GaN contact layer exceeds 0.5 mm, the p-side GaN is installed on page 83. -------- Order ------- line Λ7

Printed by Qinghua Intellectual Property Bureau's Consumer Cooperatives V. Description of Invention () Lattice defects will easily occur in the contact layer 9 and crystallinity will decrease. The thinner the thickness of the contact layer is, the lower the V f is, so that the luminous efficiency can be improved. In addition, if the p-type impurity system of the P-side GaN contact layer 9 is Mg, it is easier to obtain P-type characteristics' and it is easier to obtain ohmic contact. The concentration of Mg is between 1 × 10S / cm3 and ixl0n / cm3, preferably between 5x1019 / cm3 and 3M〇2Q / cm3, and more preferably between ιχ 1〇2〇 / cm3 about. If the concentration of Mg is within this range, a good p-type film 'can be easily obtained and Vf can be reduced. In addition, the η electrode 12 ′ and the p electrode π are formed on the η 恻 contact layer 4 and the p-side GaN contact layer 9, respectively. The materials of the ^ electrode 12 and the ρ electrode 11 are not limited. For example, the η electrode 12 system may be W / A1 ′ and the ρ electrode u system may be Ni / Au α. [Embodiment 6] The following description is provided. A nitride semiconductor according to a sixth embodiment of the present invention. The nitride semiconductor system of the sixth embodiment is a nitride semiconductor having a ^ -type multilayer film and a 13¾ multilayer film. The basic structure is the same as that of the first embodiment. For convenience of explanation, please refer to FIG. 1 . The nitride semiconductor of this sixth embodiment is sequentially stacked on a blue quartz substrate 1-a first buffer layer formed of GaN 2, an undoped Gajsj exhibition-W 3, a Si-doped GaN The formation of the η-side contact layer 4 '

GaN layer 5, an η-side multilayer film g, an active layer made of inGaN / GaN + multiple quantum well structure 7, a p-side multilayer film 8, (Jing first read the precautions on the back and fill out this PAGE} LI— DI— nn & * OJ III ^ ip I. Consumer cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs Du printed 4371 03 V. Description of the invention () and a p 恻 contact layer formed of Mg-doped GaN 9, Among them, the composition of each nitride semiconductor constituting the η 恻 multilayer film layer 6 and the p-side multilayer film layer s, and / or the number of ηρ and ρ-side layers are different from those of Embodiment 3, and Embodiment 6 For the nitride semiconductor, various multilayer films described in Embodiments 1 to 5 can be used as the η 恻 multilayer film 6 and the P-side multilayer film 8. Here, in FIG. 1 The 11-type multilayer film layer of the η-type nitride semiconductor is provided with 1 layer, and the ρ-type multilayer film layer of the P-type nitride semiconductor is also provided with a layer. However, for the η 恻 region and the ρ-side region, the It is also possible to provide two layers of multi-layer film respectively. For example, if the above-mentioned undoped layer 5 is made of an undoped nitride When the lower layer formed by an object semiconductor, an intermediate layer doped with an n-type impurity-doped nitride semiconductor, and an upper layer formed with an undoped nitride semiconductor, the light-emitting output, Vf, and electrostatic resistance can be made. The pressure is better. When there are 2 types of η-type multilayer films in the η side region, the more the number of layers of any of the 2 types of η-type multilayer films is better than the number of layers of the ρ-type multilayer film. First, ' The description is made with reference to a multi-layer plutonium layer. In the sixth embodiment, the 'η-type multi-layer film layer 6 is composed of at least two kinds of nitride semi-beep bodies with different compositions, and its composition is preferably InzGai_zN (0Q < i) [i-th nitride semiconductor film], or inpGai. pNtOcpd) !; 2nd nitride semiconductor film] and other two types of composition. The preferred composition of the first nitride semiconductor film is that the smaller the z value in the chemical formula of the first nitride semiconductor film described above is, the better the crystallinity is, and the more preferable the z value is zero. GaN. The 8th education ......... 丨----------- Μ ~ _____ --------... Paper V •• 义 屮 Μη Prepare .. :: B. Section (cMS) A 丨 格格 (? 1ϋ " ------—_— 一----------- *-1 1 II! — ^ · — —--- --- Xian {Please read the notes on the back before filling out this page) 4371 03 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (In addition, the composition of the second nitride semiconductor film is better In the above chemical formula used to indicate the second nitride semiconductor film, the InpCJai-PN with a p value of 0 or less is preferably InpGa with a P value of 0.1 or less. PN «In the present invention, the The best combination of the first nitride semiconductor film and the second nitride semiconductor film is: 帛 丨 Nitride semiconductor film is used

GaN, and the second nitride semiconductor film system uses IripGai.pN having a p-value of 0.5 or less. In addition, for the η-side multilayer film layer 6, the first nitride semiconductor film and the second nitride semiconductor film system are each formed with at least one layer or more and a total of 2 layers and 3 or more layers, and it is preferably formed separately. Two or more layers, a total of four layers, more preferably seven or more layers, and a total of 14 or more layers. Although the upper limit of the number of the stacked layers of the first nitride semi-isospheric film and the second nitride semiconductor film is not particularly limited, it is preferably 5 layers or less. If it exceeds 500, it will take a long time to pile up, complicate the operation, and further reduce the component characteristics slightly. The thickness of the single-nitride semiconductor layer of the xenon-side sense layer film layer 6 is not particularly limited. It is preferable that the thickness of the single nitride semiconductor layer of one kind among the two types of nitride semiconductor layers be within Angstroms Following

It is best to be less than 70 Angstroms, and it is better to have s L less than 50 Angstroms. Because the thickness of the single nitride semiconductor layer constituting the n-side multi-waste cavity a £ „increases the thickness of the single nitride semiconductor layer 6 to increase the thickness of the multilayer film into a superlattice structure, and further crystallizes the multilayer film layer. Sex is better 'so you can boost the output. Page 86

Public J ------------ ^ c -------- Order --------- 1 ^.. (Please read the notes on the back before filling in this page)

4371 〇3 5. Description of the invention (If the η-side multilayer film 6 is composed of a first nitride semiconductor film and a second nitride semiconductor film, if at least one of them has a film thickness of less than 100 angstroms, and It is better to be below 70 angstroms, and even better is to be below 50 angstroms. If at least one of the first nitride semiconductor film and the second nitride semiconductor ytterbium is below i 00 angstroms, it is single. All of the nitride semiconductor film systems are below the critical elastic film thickness, so that they have good crystallinity. When a nitride semiconductor layer with a good crystallinity is formed below this nitride semiconductor layer, The crystallinity can be further improved. According to this, the first nitride semiconductor film and the second nitride semiconductor film can be deposited with good crystallinity, and the crystallinity of the entire n-type multilayer film layer 6 can be improved. Since the crystallinity of the entire η-type multilayer film layer 6 is improved, it is possible to increase the light output of the device. The thickness of both the first nitride semiconductor film and the second nitride semiconductor film is preferably 100 angstroms. Below, and preferably below 70 angstroms It is better that the best is less than 50 angstroms. The thicknesses of the first nitride semiconductor film and the second nitride semiconductor film of the right η-type multilayer film 6 are both 100 angstroms or less. The film thickness of the nitride semiconductor layer can be less than the critical elastic film thickness. Compared with the thick film, it can grow into a nitride semiconductor with good crystallinity. In addition, if it is the n-type multilayer film When both the first nitride semiconductor film and the second gaseous semiconductor film of layer 6 are less than 70 angstroms, the multilayer film layer system may have a superlattice structure. When an active layer is formed on a multi-layer mold layer, the multi-layer film layer can serve as a buffer layer. Nt tt nnnnnt »I n I < Please read the precautions on the back before filling out this page) Economic and Intellectual Property Bureau Employee Consumption Cooperation Du Yin 絜A7, 4371 03 V. Description of the invention (Use, and then can grow-active layer with good crystallinity. The η-type multilayer film layer has a thickness of ~~, although there is no certain limit, it is better to ~ 10000 angstroms', better hc . — 25 to 5000 angstroms, the best is 25 to 1 00 0 angstroms. If the film thickness is within the above I ... of the shovel 1, it can be improved, and the rotation of the element can be improved. The formation position of the η-side multilayer film layer 6 is not limited. Adjacent to the activity ... or separated from the active layer 7: It is best to be located adjacent to the active layer. When the 11-side multi-layer film layer 6 is in phase with the active layer 7 When it is set, then the nitride semiconductor that is connected to the well layer (or barrier layer) of the first layer of the active layer 7 may be the first nitride semiconductor film or the first nitride semiconductor film constituting the n-side multilayer film layer 6. 2Nitride semiconductor film. This is the J ... mouth, the first nitride semiconductor: the stacking order of the film and the second nitride semiconductor film is not limited. The nitride semiconductor film begins to accumulate and is deposited on the first nitride semiconductor film; or, the aluminized semiconductor film begins to accumulate and finally reaches the second nitride semiconductor; or the second nitride semiconductor film begins to accumulate and finally reaches the first 1 Nitride semiconductor film: Or, the second nitride semiconductor film is finally deposited from the hafnium 2 nitride semiconductor film. In the figure, although the η-side multilayer film layer 6 is provided adjacent to the active layer 7, the η-side multilayer film layer 6 may be separated from the active layer 7 and bite. At this time, as described above, 'A layer composed of another n-type nitride semiconductor may be formed between the n-side multilayer film layer 6 and the active layer 7. In the sixth embodiment, the single-nitride semiconductor used to form the n-side multilayer film layer 6 is, for example, the first and second nitride semiconductors described above, page 88 (:; N5) Λ'ί ί ^ 10 ^ --- 97 ί ¥ ------------ Outfit -------- Order · --------- I (Please read the precautions on the back first Fill out this page > Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs for Consumer Consumption Du printed 〆4371 〇3 Λ7 B7 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Impurities. In the sixth embodiment of the report, the so-called undoped substance refers to the state of not deliberately earning impurities, for example, for impurities that are mixed with semi-parallel nitrides ... Diffusion and mixed impurities ... "are undoped. Also," due to the diffusion of 0 impurity system, the impurity in the layer will have a gradient.: The single nitride semiconductor layer system constituting the "multilayer film layer 6" and In the case of 2-nitride semiconducting, the nitride semiconductor film is about 椽; both iride compound semiconductor films can be doped with f, or both of them can be connected to 1 η type Or only the dopant. When the first nitride semiconductor film and the second nitride semiconductor film are intercalated with n-type cone 1 and the two adjacent nitride-type impurities are different, It is also possible to make the output easier to uncover by the dopant doped by η P in the h-slide. When the first nitride semiconductor film and the second nitride semiconductor are put on the edge, when @ 万 Both are connected to n-type impurities, then The impurity concentration of the single nitride semiconductor layer in the phase part may be different or the same, but the difference is better. It is best to have an impurity that is not crystallized, secondly Sequence: Tuning: Selecting impurities. Secondly, doping both. When Tian Yi's first nitride semiconductor film and the second nitride semiconductor film are connected to 11-split impurities, the impurity fertility is not limited to which layer is high. The impurity concentration when n-type impurities are inserted is not limited, but it is preferably 5x l0h / cm3 w γ 'The better is 1 X 1 〇2G / Cm3 or less, and the best is adjusted to 5x1 ~ If it exceeds WW, the crystallinity of the nitride layer will decrease, but the output will be reduced. This paper rule & —----- I . If If OJ »1_ * 1- I f (Please read the idea on the back before filling this page) (210 43 7 I 〇3

V. Description of the invention (The point is the same for the modulation doping. In the present invention, those who are n-type impurities may be Group IV or Group ν elements such as Si, Ge, Sn, S, etc., which are preferably Si and Gn are used as η-type impurities. The following description will be made with reference to the p-type multilayer film layer 8. In the sixth embodiment, the p-type multilayer film layer 8 may be composed of at least two kinds of nitrogen having different compositions. Compound semiconductor, and its composition is preferably 1ηχΟ & 1.χΝ (〇 < χ < η [3 nitride semiconductor film], or

InyGaUyN ((^ y < 1) [fourth nitride semiconductor film] and other two types of compositions. A preferred composition of the third nitride semiconductor film is the above-mentioned chemical formula for the third nitride semiconductor film. With χ value below 0

AlxGai.xN »If the value of X exceeds 0.5, the crystal surname will deteriorate, and gaps will easily occur. A preferred composition of the fourth nitride semiconductor film is as described above. The y value in the chemical formula of the fourth nitride semiconductor film is preferably 0.

GaN. When the y value is 0, it can be easily formed-a multi-layered film with a good crystal surname. In the sixth embodiment, the optimal combination system of the third nitride semiconductor film and the fourth gaseous semiconductor film is that the third nitride semiconductor film system uses A "Ga whose χ value system is · 0 · 5 or less ] ", And the fourth nitride semiconductor film is GaN. In addition, in the case of the P-type multilayer film 8, the third nitride semiconductor film and the fourth nitride semiconductor film are formed with at least one layer each. (Page 90, please read the back; please fill in the ^ items before filling in this page)

--------- Order --- I ----- Line J Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 43 71 0 3 A7 B7 V. Description of the invention (total 2 or 3 layers Above, it is preferable to form two or more layers each, and a total of four layers are formed. The third nitride semiconductor doped layer also has no upper limit on the maximum number of stacked layers of the film and the fourth nitride semiconductor film. And other characteristics of the process and element characteristics' It is better to be less than 〇OO layer. Although the total thickness of the P-type multilayer film layer 8 is not necessarily limited, it is preferably M ~ 10000 angstroms, more preferably 25 ~ 5000 angstroms, the best is 25 ～ ί〇〇〇angstrom. If the film thickness is within the upper limit α, if the above range is within the range, the crystallinity will be improved, and the output of the device will be improved In addition, in the present invention, as for the? -Type multilayer film 8 whose film thickness is within the above range, the thinner the film thickness, the easier it is for the Vf and the initial value of the device to be lowered. Although the film thickness of a single gaseous semiconducting layer of the p-type multilayer film 8 is not particularly limited, it is preferable that at least two of the two types of nitride semiconductor layers be present. The thickness of a single type of single nitride semiconductor layer is 100 angstroms or less, and preferably 70 angstroms or less, and more preferably 50 angstroms or less. Because the p-type multilayer film 8 The thinner the thickness of a single argon semiconductor layer is, the more the multilayer film becomes a superlattice structure, and the crystallinity of the multilayer film becomes better. Therefore, when a p-type impurity is added, a larger carrier concentration is obtained At the same time, the P layer with a lower rate can also easily reduce the V f and the initial value of the device, so that a good light output can be obtained with low power consumption. If the P-type multilayer film layer 8 Nitride semiconductor film and page 4 of 91 (confused read the precautions on the back before filling this page)

-I II ---- Order. — — 1! III Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs _I __ ^ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Γ 4371 03 Α7 ____ Β7 V. Description of the invention () In the formation of a compound semiconductor film, if at least one of them is required to have a film thickness of 100 angstroms or less, it is preferably 70 angstroms or less, and more preferably 50 angstroms or less. If at least the third nitride semiconductor film and the fourth nitride semiconductor film have a film thickness of less than ⑽ angstrom ', then a single nitride semiconductor film system can be less than the elastic critical film thickness, so that it has a good Crystallization: When a nitride semiconductor layer with an elastic critical film thickness or less is formed on the nitride semiconductor layer with good crystallinity, the crystallinity can be further improved. Accordingly, the third nitride semiconductor film and the fourth nitride semiconductor film can be deposited with good crystallinity, and the crystallinity of the entire p-type multilayer film layer 8 can be improved. Since the crystallinity of the entire p-type multilayer film layer 8 is improved, the light emission output of the device can be improved. The film thickness of both the third semiconductor film and the fourth nitride semiconductor film is preferably 100 angstroms or less, preferably 70 angstroms or less, and more preferably 50 angstroms or less. Egypt below. If the thicknesses of both the third nitride semiconductor film and the fourth nitride semiconductor film of the P-type multilayer film layer 8 are 100 angstroms or less, the film thickness of a single nitride semiconductor layer may be at the elastic limit. The film thickness is less than that of a thick film, and it can grow into a nitride semiconductor with good crystallinity. In addition, if both the third nitride semiconductor film and the fourth gaseous semiconductor film of the p-type multilayer film layer 8 are less than 70 angstroms, the multilayer film layer system may have a superlattice structure and its crystallinity may also be For the better, at the same time, the element "Vf and the initial value can be easily reduced, thereby improving the light output. The formation position of the P-type multilayer film layer 8 is not limited, and it can be page 92 ;: >!-Κ; λ .; ---------------- ---------------------------------- ------------. IIIII — I '—ItlIi — — (Please read the precautions on the back before filling out this page) 43 71 03 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Adjacent to the active layer 7' or It is provided separately from the active layer 7, but the P-side multilayer film layer 8 is preferably provided adjacent to the active layer 7. When the p-type multilayer film is arranged adjacent to the active layer 7, the nitride semiconductor layer system connected to the well layer (or the barrier layer) of the first layer of the active layer 7 may constitute the P The third nitride semiconductor film or the fourth nitride semiconductor film of the type multilayer film 8. From this, it is understood that the order of deposition of the third nitride semiconductor film and the fourth nitride semiconductor film is not necessarily limited. In other words, it can start with the third nitride semiconductor film and finally the third nitride semiconductor film; or start with the third nitride semiconductor film and finally the fourth nitride semiconductor film; or the fourth nitride The semiconductor film starts to deposit and finally becomes the third nitride semiconductor film; or the fourth nitride semiconductor film starts to deposit and finally reaches the fourth nitride semiconductor film. In FIG. 1, although the p-type multilayer film layer 8 is provided adjacent to the active layer 7, the p-type multilayer film layer 8 may be provided separately from the active layer 7. At this time, as described above A layer composed of other p-type nitride semiconductors can be formed between the p-type multilayer film layer 8 and the active layer 7. In the sixth embodiment, the third and fourth nitride semiconducting layers may be doped with no impurities, or only one of them may be doped with p-type impurities, or both of them may be doped with p-type impurities simultaneously. When neither the third nitride semiconductor film nor the fourth nitride semiconductor film constituting the P-type multilayer film layer 8 is doped with impurities, the thickness of the p-type multilayer film layer 8 is preferably 0.1 "or less, The better is less than 700 Angstroms, and the best is less than 500 Angstroms. If the film thickness is greater than 0 and one is thick, it will be difficult to perform the positive hole method in the active layer, so it will emit light. Output is reduced. Page 93 -------- II --- ^ -------- Order --------- line (Please read the precautions on the back before filling this page) 4371 03 A7 B7 5. Description of the invention () In addition, if the film thickness exceeds 0.1 μm, the resistance of the undoped layer will increase. In addition, when the third nitride semiconductor film and the fourth nitride semiconductor film One of the nitride semiconductor films is doped with P-type impurities, that is, so-called modulation doping, which can easily improve the output. Moreover, when the doping is performed, a high carrier concentration can be easily obtained. 0 layer β In addition, when both the third nitride semiconductor film and the fourth nitride semiconductor film are doped with ρ-type impurities, the carrier concentration can be improved compared to the case where one of them is not doped. Therefore, vf can be reduced. The impurity concentration between the adjacent single-nitride semiconductor layers is doped with P-type impurities in both the third lice compound semiconductor film and the fourth nitride semiconductor film. The difference can be different. Or it is the same, but it is better to be different. In the sixth embodiment, as the ρ-type material substance incorporated in the P-type multilayer film 8 may be Mg, Zn, Ca, Be, Cd, etc. Group ΠA and IIB group 4 β, it is best to use Mg, Be as the ρ-type impurity. P & impurity 1 the impurity concentration is best '1 X 1 022 / cm3 or less', which is better 5 X 1 02 G / 3,,, / cm or less. If it exceeds 1 X 1 0 / cm3 ', the crystallinity of the nitride semiconductor layer will be deteriorated, and the luminous output will be reduced. P Zhe Although there is no certain limit on the lower limit of the Han degree of the asset, it is preferably 5x10l6 / cm3 or more. The following is for the η-type multilayer film layer 6 and the P-type multi-layer waist layer 8 shown in @@ amp The Xianle Mountain and the layers forming the element structure will be described, but the present invention is not limited thereto. The substrate 1 may be a blue quartz C-plane or a Han-plane. --- -

• di) X (please read the precautions on the back side before filling out this page)

n 一 —eJk. > ^ i I Printed by the Intellectual Property Office of the Ministry of Economic Affairs and printed by the Consumer Cooperative Cooperative Produced by the Intellectual Property Office of the Ministry of Economic Affairs and printed by the employee. V * '43 710 3 A7 —________ B: _________ — 5. Description of the invention ()

The main surface is blue quartz, or an insulating substrate such as spinel (MgAl204), or a semiconductor substrate such as SiC (containing 6H, 4H, 3C), Si, ZnO, GaAs, GaN, or the like. The buffer layer 2 is a nitride semiconductor formed by (} adAi1-dN (d is in the range of Odd). The smaller the proportion of A1, the more significantly the crystallinity of its composition is improved. The layer 2 is preferably composed of GaN. The film thickness of the buffer layer 2 is between 0.002 and 0.5 mm, and it is preferably adjusted between 0.005 and 0.2 to m, and more preferably between 0.01 and 0.02. / im. If the film thickness of the buffer layer 2 is adjusted within the above range *, the crystallinity of the nitride semiconductor will be improved, and the crystal of the nitride semiconductor grown on the buffer layer 2 will be improved. Improved performance ^ The growth temperature of the buffer layer 2 is between 2000 and 900 degrees C. 'It is best to adjust between 400 and 800 degrees C. When the growth temperature is within the above temperature range, it is A good complex crystal can be formed, and using the complex system as a seed crystal, the crystallinity of the nitride semiconductor grown on the buffer layer 2 will be improved. Moreover, depending on the type of the substrate and the growth method, the above The buffer layer 2 formed at a low temperature can be omitted. Secondly, as the undoped GnN layer 3 It can be grown at a higher temperature than when the buffer layer 2 is grown, for example, 900 ~ 1100 ° C; it can be composed of InfAlgGau-gNiO ^^ Osg, f + gsi), although its composition is not A certain limit 'but to obtain a nitride semiconductor layer with fewer crystal defects' is preferably GaN or AlgGai-gN with a g value of 0 or less "In addition,' the film thickness is not limited, But it is more than the buffer layer on page 95 f 沔?;} Η 闷 Η:: 准 （CNSM1 ------------------------- -------- I -------- Order --------- 嫂 '(Please read the note on the back before filling in this page) 4371 〇3 A7- --- gL___ 5. Description of the invention () Thick film thickness to grow, usually above O. Iym. Used as a η-side contact layer 4 made of GaN based on Si impurities and un-doped The quality of the GnN layer 3 is the same, it can be composed of InfAlgGai f-gN (0sf, 0sg, f + gu) 'Although the composition is not limited, but to obtain a nitride semiconductor layer with less crystal defects, It is preferably GaN or AlgGai-gN with a 疋 g value of 0.2 or less. In addition, although the film thickness of the n-side contact layer 4 is smaller than Certainly limited, but since it is a layer for forming an η electrode, its film thickness is preferably lj [zrn or more. In addition, in order not to deteriorate the crystallinity of a nitride semiconductor, its η-type impurity The concentration is preferably doped at a high concentration, and its range is more than 1 χ 丨 〇 丨 s / cm3 and less than 5xl021 / cm3. The undoped GaN layer 5 is the same as the above, and it can be made by InfAlgGa. It is composed of f.gN (C ^ f, 0Sg, f + gSl), although its composition is not limited, but in order to obtain a nitride semiconductor layer with less crystal defects, it is based on G aN or g value It is preferably A1 g Ga 1 · that is 0.2 or less, or InfGaI_fN that has an f-number of 0.1 or less. Since the growth system of the undoped GaN layer 5 is different from that of a direct active system layer formed on the η-side contact layer 4 doped with a high concentration of impurities, the basic crystallinity can be improved, so The n-type multilayer film layer 6 to be grown later can be easily grown, and the active layer formed thereon can also be easily grown, thereby further improving the crystallinity. It can be seen from this that when a η-side contact layer 4 doped with an erbium-concentration impurity is deposited on the unsupported impurity GnN layer 3, next, an undoped GaN layer 5 and an n-type multilayer film 6 are sequentially deposited. When ', the Vf of the LED element can be reduced. In addition, when the n-type multilayer film is undoped, the undoped GaN layer 5 is page 96 — ~ ---------------- (please first (Please read the notes on the back and fill in this page again.) Packing ---- Order --------- Printed by Employee Consumption Cooperative of Intellectual Property Bureau of Ministry of Economic Affairs 37103 Λ: Printed by Employee Consumption Cooperative of Intellectual Property Bureau of Ministry of Economic Affairs V. Description of the invention (can be omitted. In addition, in the sixth embodiment, the undoped layer 5 can also be changed into an implementation form. The state 5 is the same as that of the undoped lower layer 3. 5a and-doped _-type impurity intermediate layer 305b, ytterbium and an undoped upper layer 305c formed of a multilayer film β, wherein the multilayer film layer starts from the substrate side, at least by an undoped The lower layer 305a of impurities and a three-layer upper layer doped with a “type impurity and-unconnected impurities” may include a layer other than the lower layer 305a to the upper layer 305c. In addition, the multilayer The film layer can be in direct contact with the active layer, or other layers can be placed in between. The nitride semiconductor that constitutes the lower layer 305a to the upper layer 305c can be represented by 叱 h < 1) Gas-rich conductors of various compositions are preferably those composed of GaN. In addition, each layer of the multilayer film may be the same or different. The thickness of the multilayer film is not limited. It is 175 to 12000 angstroms', preferably 1,000 to 10,000 angstroms, and more preferably 2000 to 6,000 angstroms. If the thickness of the multilayer film is within the above range, then It has the advantages of optimizing V f and improving the electrostatic withstand voltage. The film thickness adjustment of the multilayer film layer having the film thickness in the above range can be adjusted by adjusting the film thickness of each layer such as the lower layer 305a, the intermediate layer 305b, and the upper layer 305c. The film thickness of the multilayer film layer is within the above-mentioned range. In addition, although the film thicknesses of the lower layer 3 05 a, the intermediate layer 3 05b ′, and the upper layer 305 c constituting the multilayer film layer are not limited, but because The stacking position in the multilayer film is different and the performance of the device is different. Page ----------------------------. Fill out this page) The paper size 玷 丨 丨 十 肖 技 ΐίί- 7- (CJNS; A4 (2:

RV Λ7 Β7 V. Description of the invention (Temple f also, Shen has different effects, so 'to clearly understand the impact of the various layers on the performance of the element', the film thickness of any two layers can be consolidated and the rest: 1 layer The thickness of the film is changed step by step, and the range of the film thickness with good characteristics is measured. In order to further specify the range of the mold thickness through the adjustment of each cell. Although the layers of the multilayer film may not be It will have a direct effect on each electrostatic shot. When a multi-latent film layer is formed by the combination of various layers, the overall characteristics of various elements can be improved by 1, especially when the light output and electrostatic withstand voltage are significantly improved. The film thickness of the undoped lower layer 305a may be from 100 to 10,000 angstroms, preferably from 500 to 10,000 angstroms, and more preferably from 5,000 to 5,000 angstroms. Although乂 As the thickness of the underlying layer 3 β5 a of β-doped material gradually thickens, its electrostatic withstand voltage system continues to increase 'but, when it reaches the vicinity of i 〇〇〇angstrom, vf system rises rapidly' and when the film When the thickness becomes thinner, the Vf system gradually decreases, but the electrostatic withstand voltage decreases greatly. When the temperature is below 〇〇 ', the yield will be greatly reduced as the electrostatic withstand voltage decreases. In addition, the lower layer 305a focuses on improving the crystallinity of the n-type impurity-containing contact layer 4 'So' it is best to grow to a film thickness that can improve the crystallinity. The film thickness of the intermediate layer 305b doped with η-type impurities is 50 to 100 angstroms, and preferably 100 to 500 angstroms. 'More preferably, it is 15 to 400 angstroms. The impurity-doped intermediate layer 305b is used as a layer having a sufficient carrier concentration and a large light output. If this layer is not formed, the light output system is Significantly decreased. In addition, when the film thickness exceeds 丨 〇〇〇〇 ', then the light output is significantly 1 (Cr-; 〇) Ai (; (〇y vf; 7 (Please read the precautions on the back before filling in this page ) Packing -------- Order --------- Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs

5. Description of the invention (

Declining tendency. On the other hand, if you only look at the electrostatic withstand voltage on the right, the intermediate layer 305b: The thicker the film, the better the electrostatic withstand voltage system. However, when the thickness is smaller, the electrostatic withstand voltage system tends to decrease significantly. Undoped (The film thickness of the upper layer 3G5e is 25 to 50 angstroms, preferably _500 angstroms. More preferably, it is 25 to 5 angstroms. The upper layer of unsupported impurities is in contact with or closest to the activity in the 30W multilayer film layer. The layered layer has a great relationship with the prevention of leakage current, and the leakage current tends to increase when the film thickness of Shangguang 3 仏 is below Nai Ang. In addition, as shown in Figure 9 and Figure 9B As shown, if the film thickness of the upper layer 3Q5e exceeds Angstrom, Vf will increase and the electrostatic withstand voltage system will decrease. As mentioned above, the above system focuses on the film thickness of each layer susceptible to the lower layer 305a to the upper layer 305c. Element characteristics affected by changes, if the lower layer 305 & middle layer 305b, and upper layer 305c are combined with each other, all of the device characteristics will be substantially uniform, but in order to make the light output and electrostatic withstand voltage better, and To meet the higher requirements specifications, each film thickness can be specified in the above range. 'This can make the light output better, and at the same time can further improve the reliability of the product. In addition,' for the best results, the multilayer film The thickness of each layer can be determined by the type of wavelength Various conditions such as varying active layer composition, electrode, LED element shape, etc., are appropriately adjusted. The performance of the combination of the film thicknesses of each layer can be made to be better than that of a known person by appropriately combining the film thicknesses in the above ranges. Luminous output and electrostatic withstand voltage. The composition of each of the layers 305a, 305b, and 305c used to form the above-mentioned multi-layered film layer can be 111 „1 八 11„ 〇3 1_ „1-1 ^ (〇 € 111 < 1,0 幺 11 < 1) to indicate, and page 99 of each layer {please read the unintentional matter on the back before filling in this page). Printed by the Consumer Cooperative of the Property Bureau 4371 〇3 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs • 2 *, Description of the invention (The composition can be the same or different, where the ratio of ϊη and A1 is as small as possible, the best It is formed by GaN. The η-plastic impurity concentration doped in the intermediate layer 305b of the first multilayer film layer is not limited, but it can be 3 X 1 0 18 / c m3 'It is best adjusted to 5χ I 018 / cm3 »and the upper limit of the η-type impurity concentration is not limited, but it is preferably below 5x 1021 / Cm3, 俾The crystallinity does not deteriorate. If the impurity concentration of the intermediate layer 305b of the multilayer film is in the above range, the luminous output can be improved, and Vf can be reduced. As the n-type impurity, it can be Si, Ge, etc. Group IVB 'and Group VIB of the schedule table of Zn, Se, S, 0, etc., the most important of which is Si, Ge, S as n-type impurities "In addition," for the interface of the multilayer film layer "if As long as the function of each layer and element is not impaired, it may have both layers. Secondly, the active layer 7 may be a nitride semiconductor containing at least In. It is preferable that the active layer is a semiconductor containing lnjGai_jN. (0 Magic < 1) A single quantum well layer structure or a multiple quantum well layer structure of the well layer formed. The stacking order of the barrier layer and the well layer of the active layer 7 is not limited, and it can start from the well layer and finally the well layer, or from the well layer and finally the barrier layer, or from the barrier layer and finally The barrier layer, or the accumulation of the barrier layer, and finally the well layer. The thickness of the sacrificial layer is _Angle or less', preferably 70 Angstrom or less, and more preferably 50 Angstrom or less. When the thickness of the layer is greater than 100 Angstroms, the output tends to be difficult to improve. In addition, the thickness of the barrier layer should be less than 300 angstroms, preferably 250 angstroms to T ', and more preferably 200 angstroms or less. 100th ------------ 51 -------- Order ---- 1 ----- Line (Please read the precautions on the back before filling this page) 4371 0 3 A; __B7 V. Description of the invention () Secondly, as above, as the p-type GaN contact layer doped with Mg, 9 can be determined by In # 丨 sGabu㈠N (0 < f, 0Sg 'f + d). Although its composition is not limited, it is preferably GaN in order to obtain a nitride semiconductor layer with fewer crystal defects and to make it easy to have good ohmic contact with the electrode. In addition, the n-electrode and P-electrode systems used in the present invention are not limited, and they can be conventional electrodes' or the electrodes described in the examples. [Embodiment] The following is a description of a courtesy embodiment of the present invention, but the specific embodiment of the present invention is not limited to the following. [Embodiment 1] Embodiment 1 is an embodiment related to Embodiment 1 of the present invention shown in Fig. 1. In this embodiment 1, a substrate 1 formed of blue quartz (C surface) is first placed in a MOVPE reaction vessel, and hydrogen gas is passed through to raise the temperature of the substrate to 1 050 degrees C. Based on this, the substrate is cleaned, and then the following layers are formed thereon. In addition, in addition to the blue quartz C plane as the main surface, the substrate 1 may also be a blue quartz with blue quartz R plane and A plane as the main plane, or a spinel (MgAl204) Insulating substrates, or semiconductor substrates such as SiC (containing 6H, 4H, 3C), Si, ZnO, GaAs, GaN, etc. Page 101 < Please read the notes on the back of the page before filling out this page) -------- Order --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4371〇3 Depending on the type of substrate and the growth method, the first buffer layer 2 of the above can be omitted. A. V. Description of the invention () (First buffer layer 2) Next, reduce the temperature to 5 10 ° C and use Where the lice-laden carrier gas, the ammonia-added raw material gas, and TMG (trimethylgallium), α #} grows on the substrate 1 a $ w layer 2 made of GaN and having a film thickness of 200 angstroms. In addition, when grown at a low temperature (the second buffer layer 3), after growing the buffer layer 2 ', only the supply of tmg is stopped, and the temperature is returned to 1 050 degrees C. When the temperature reaches 1 050 degrees c, use The TMG source gas and ammonia gas are added to grow a second buffer layer 3 made of undoped + GaN and having a film thickness of 1 / zm. The second buffer layer 3 is grown at a higher temperature than that of the previously grown second buffer layer 2, such as 900 ~! 100 ° C; it can be composed of InxAlyGai x yN (hx, ky, χ + y ^ i). Although its composition is not limited, in order to obtain a nitride semiconductor layer with less crystal defects, it is based on GaN, Or AlyGaUyN with a y value of 0 or less is preferred. In addition, the film thickness is not limited, but it is grown with a film thickness thicker than that of the buffer layer, and is usually more than the above. (The η-side contact layer is followed by maintaining the temperature at 1050 ° C, and also using a raw material gas with TM (}, ammonia gas, and an impurity gas with silicon gas to grow into a earning si concentration of 5xic ^ / cm3, film thickness is in m, by GaN Page 102 (Please read the precautions on the back before filling in this page) Crack -------- Order --------- ^ Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives 4371 Ο 3

V. Description of the invention (Industrial consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs, Du printed and printed (CNSMi 的 η-side contact layer 4 formed. The η-side contact layer 4 and the second buffer layer J-like 'system can be InxAlyGai-x. Although the composition of yN (OSx, 〇: iy, χ + yu) is not limited, in order to obtain a nitride semiconductor layer with less crystal defects, it is GaN or an y value of 0.2 or less. ^ ~ N is better. In addition, the film thickness is not limited, but in order to form a-, η electrode layer, its film thickness is preferably 1 gm or more. In addition, in order not to deteriorate the crystallinity of the nitride semiconductor The η-type impurity concentration is preferably blended at a high concentration. The range is 1 × 1 o1 8 / cm3 or more, 1 〇21 / (; imitation 3 or less (third buffer layer 5). Second, supply is stopped. The temperature of the silane gas is also set to 1050 ° C, so that a third buffer layer 5 formed of an undoped material having a thickness of 100 angstroms is grown. The third buffer layer 5 is the same as the above. Similarly, its system can also be composed of InxAlyGat.x.yNNSx.OSy, x + 0i). Although its composition is not limited, in order to obtain crystal defects, The less helium semiconductor layer is preferably GaN, or AlyGa] yN with a y value of 0.2 or less, or InxGai-xN with an X value of 0.1 or less. Because of the length of the third buffer layer 5, The system is different from the direct active layer grown on the η-side contact layer 4 doped with a high concentration of impurities. Rhenium can improve the crystallinity of the base, and thus can easily grow nitride semiconductors. If the η-side contact layer 4 earning * concentration of impurities is stacked on the layer 1 that is not pushed by impurities, and then an un-doped third buffer layer 5 is stacked thereon to form a three-layer structure Vf of the LED element can be reduced. In addition, when the multi-layered film layer 6 on the side is undoped, the undoped third buffer layer 5 3 ί 103 pages Λ ··, · * ·-d Μ ----------- -------- ^ --------- έΐϊ '(Read the 11 items on the back of the book before filling in this page) Λ7 U square .f 生 层 7) Second: V 43 71 0 3 __________D7__ 5. The description of the invention () can be omitted. (η side multilayer film 6) Secondly, the temperature is set to 800 ° C, and TMG, TMI, And oxygen to grow a thickness Is 25 Angstroms' of the first nitride semiconductor film formed of undoped Ino.tnGaowN, and then the temperature is increased, and a second nitride semiconductor of Angstrom thickness 25 Angstroms is grown thereon. After that, the operation is repeated and stacked in the order of 1 + 2 to form an η-side multi-wide film layer having a superlattice structure of each layer and a film thickness of 500 angstroms. A 200 angstrom barrier layer formed of undoped GaN is grown, and the temperature is set to 800 ° C. Using tmG, Τί, and ammonia, a thickness of 30 Angstroms, well layers formed of undoped In.4Ga "N. After that, 5 barrier layers and 4 barrier layers are stacked on each other in the order of barrier wall + well + barrier wall + well + ... barrier wall. The well layer 'has grown from it—the habitual layer 7 composed of a multiple quantum well structure with a film thickness of 1120 angstroms. Although the active layer 7 starts to accumulate from the barrier layer', the accumulation sequence can also start from the well layer and finally the well Layer, or start from the well layer and finally the barrier layer 'or start from the barrier layer and finally the well layer' its stacking sequence and drag limit. The thickness of the well layer is less than 4 100 Angstroms', and it is preferably 70. Below Angstrom, the better is adjusted below 50 Angstrom ^ • When the thickness of the well layer is more than 100 Angstrom, the output will tend to be difficult to improve. In addition, '-------- ---- -------- Order --------- Green < Please read the unintentional matter on the back before filling in this page) 43 71 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 B7 V. Description of the invention () The thickness of the barrier layer must be less than 300 angstroms, preferably 250 angstroms', and better adjusted to 200 angstroms or less. (P-side multilayer film 8) Next, TMG, TMA, ammonia, and Cp2Mg were used to grow a dopant with a concentration of 5 × 10 ls / cm3Mg, a thickness of 25 angstroms, and a p-type Al0.Q5Ga (). 95N After forming the third nitride semiconductor film, the use of Cp2Mg 'TMA is stopped, and a fourth nitride semiconductor film formed of undoped GaN with a thickness of 25 angstroms is grown. After that, the operation is repeated and the The 3rd + 4th layers are stacked on each other in order to form a p-side multilayer film layer 8 having four superlattice structures and a film thickness of 200 angstroms. (P-side contact layer 9) Next, the temperature is set to 1050 ° C. And using TMG, ammonia, and CpsMg 'to grow a p-side contact layer 9 made of p-type GaN with an impurity concentration of 1 × 1020 / cm3Mg and a thickness of 700 angstroms. The p-type contact Layer 9 can be composed of InxAlyGa [-x-yN (0sx, C ^ y, χ + ρΐ;), although its composition is not limited, However, in order to obtain a nitride semiconductor layer with less crystal defects and to make it easy to have good ohmic contact with the P-type electrode, it is preferably GaN. After the reaction is completed, the temperature is lowered to room temperature, and The wafer is placed in a reaction container in a nitrogen environment, and the cleaning process is performed at 700 ° C to further reduce the resistance of the P-type layer. After the cleaning process is completed, the wafer is taken out of the reaction container. And __ page 105 ^ j \ r (Γ: Ν ^). Νϊ ^ ϊΓ ^ ΰ) '; 297 ν'-^ ΙΓ) " * '....------ (Please read the first Please fill in this page again if you are not interested) Install -------- Order ---- I ---- line A7 4371〇3 B7 V. Description of the invention () On the surface of the top P-side contact layer 9 A light leather pattern having a predetermined shape is formed, and then the surface of the n-side contact layer 4 shown in FIG. 1 is exposed by etching on the p-side contact layer side in a RIE (reactive ion etching) device. After the etching, a light-transmissive p-type electrode 10 having a thickness of 200 angstroms and containing Ni and Au is formed over the entire surface of the p-side contact layer of the uppermost layer; and a soldering, The thickness of the pad electrode 1 1 is formed by Au. In addition, the surface of the side contact layer 4 exposed by etching is formed with an η electrode 12 containing W and A1 to form a LED components. When the LED element is 20 mA forward, it displays pure green light at 520 nm, and its Vf is only 3.2 V. Compared with the conventional multi-quantum-chirped LED element, its Vf is reduced by 0.8 V, and the output is increased. 2 times. Therefore, it is possible to obtain substantially the same characteristics as those of the conventional LED element with only 10 mA. The consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs is printed in this embodiment. Although the second nitride semiconductor film used to form the n-side multilayer film is made of GaN, it can also be made of other InxAlyGai-x.yNiOSxjSy, It is preferable that the composition is 1 x InS, which has a composition of 1 n smaller than that of the first nitride semiconductor film. In addition, although the fourth nitride semiconductor film is made of GaN, 'it may be made of other InxAlyGa 丨 ... yN (OSx, osy, χ + ρΐ)'. The composition ratio of A1 is the third nitride semiconductor. The film is also small AlGaN.

In addition, as far as the structure of the conventional LED element is concerned, it can also sequentially form an undoped GaN 1061 on a first buffer layer formed of GaN. —— —— > '^ : — · __——— *. · .. 一-. _ · * — '· — Y! Ϊ; Γ: 1--¾' j. ;;; Λ (·; \ J3) .V]; u κ, (;) 〇 × · :;) 7 ^ · ί;: ') 437103 Employees' Cooperation in Intellectual Property Bureau of the Ministry of Economic Affairs 41 Printed A7 I-_ B7___ V. Description of the Invention (2) The second buffer layer, An η-side contact layer formed of GaN doped with S1, an active layer formed of the same multi-quantum erbium structure as in Example 1, a single AlO.iGa0.99N doped with Mg, and an A p-side contact layer formed of Mg-doped GaN. [Embodiment 2] The LED device described in Embodiment 2 is shown in FIG. Compared with Example 1, the LED element of this example does not grow the third buffer layer 5, and the multilayer ρ-side multilayer film does not have a superlattice structure, which is a Mg doped with a concentration of 5xlOi9 / cm3. The p-side cover layer 1 0 8 ′ having a film thickness of 200 angstroms and a p-type AioIGa () 9N layer was the same as that of Example_1. Compared to the same 20 m A, the V f series is only 3.3 V, and the wheel output series is increased by 1.8 times. [Example 3] Compared with Example I, when the n-side multilayer film 6 was grown, only the second nitride semiconductor film was formed of GaN doped with Si and having a concentration of lxi018 / cm3. In addition, the ρ-side multilayer film system does not have a superlattice structure. It is a Mg with a concentration of 5x1019 / cm3 of Τνίσ, a film thickness of 200 angstroms, and a ρ-type Al0,! Ga〇.gN The p-side clamps formed by the layers are the same as those of the first embodiment except for the P-side cover layer 108. According to this, it is possible to obtain an LED element having substantially the same characteristics as that of the second embodiment. The 107th ear is a ruler. ¾ ίΠ 屮 Κ! Λ: 标 标 if (CNS) Al;:].} &Amp; (2J0 ^ < 297 ~ — III ---- f H ------ --Order · One ----- ^ (Please read the notes on the back before filling out this page) 4371 0 3 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 B7 V. Description of the invention () [Example 4] Compared with Example 1, when it is grown on the η-side multilayer film layer 6, the first nitride semiconductor film is formed of Ino.tnGao.97 doped with Si and having a concentration of 1 × 10is / cm3; and 2Nitride semiconductor film system is formed of GaN doped with Si at a concentration of 5 × 10 ls / em3. In addition, the p-side multilayer film system does not have a superlattice structure, which is based on the doping concentration of 5 χ 丨 〇 The p-side cover layer 10 formed by the Mg, p-type AlOjGao.gN layer at 9 / cm3 is the same as in Example 1. Except for the same 20mA, its vf series is only 3 , 4V, and the output is 5 times higher than that of the conventional LED element system. [Embodiment 5] Compared to Embodiment 1, the LED element made in this embodiment does not grow a third buffer. Layer 5 When the p-side multilayer film 8 is grown, the fourth nitride half The body film is formed of a p-type GaN layer doped with Mg with a concentration of lx1019 / cm3, and is the same as that of Example i. According to this, the same characteristics as those of Example 丨 can be obtained [Embodiment 6] Compared with Embodiment 1, "the element made in this embodiment is the third buffer layer 5 without growing the third buffer layer 5" and the third nitride semiconductor is grown when the P-side multilayer film layer 8 is grown. The film system is-film thickness & 25 &

Al〇.Q5Ga " 5N &; and the fourth nitride semiconductor film is a film thickness of 25 angstroms, and is formed of an undoped GaN layer, and they are stacked on each other to form a total film thickness The layer is i 00 angstroms and is otherwise the same. Based on this' page 108 (Guess to read the notes on the back before filling out this page) --------- Order --- ill ----- β, 4371 03 V. Description of the invention () can be obtained A led element having approximately the same characteristics as in Example 4. [Embodiment 7] Compared with Embodiment 1, when growing the n-side multilayer film layer 6, the first layer formed of Infl. 03Ga0 9? N with unremoved impurities and a film thickness of 5 Angstroms was grown first. A nitride semiconductor film; secondly, a second nitride semiconductor film formed of unremoved impurity GaN and having a thickness of 25 angstroms was grown. Next, a "" mountain" 97n layer with a film thickness of 45 angstroms and unfolded impurities was grown; and a layer of 25 angstroms with unremoved impurities was grown; after that, a film thickness of 40 angstroms was grown. In " 3 (} aQ 97N layer of unremoved impurities. As mentioned in the description, it only reduces the thickness of each layer of the first nitride semiconductor film by 5 angstroms to 5 angstroms. The layer 10 and the second layer are stacked on top of each other in sequence—and, there are 10 layers of each < superlattice structure, and a total thickness of 525 Angstroms of n-side multilayers. It is grown on the P side of the multi-skinned membrane eyebrow: at the time, it grows out-doped with a third nitride formed at a concentration of 5xη ~, 浓度, a film thickness of 40 angstroms, and formed by p-type Ah η ^. Semiconducting Miscellaneous Film, Secondly, Re-formed-25 Angstroms Thick, Made of Undoped Gai

The 4th nitride semiconducting body film formed by the consumer cooperative of the Wisdom and Time Bureau of the Ministry of Economic Affairs is printed again-doped with the same concentration of sufficient Mg and a thickness of A 6 PSA1005Ga ° 95N; Then, a film thickness of 25 angstroms is formed to recognize the GaN I doped with 3 nitrides. The system only makes the Jth nitride + conductor film per angstrom. Based on this, the third 'Angle thickness until reduced to 2 (ψ j, x. And the 4th layer alternately stacked in order to form a layer with 5 layers each

^ 0-Rig structure with a total film thickness of 275 F

4,371 03 V. Description of the invention (恻 Multi-layer film. In addition to the above, the device is also the same as the LED element described in Example 1, and according to this, the characteristics described in Example 1 can be obtained. The same components are used. In addition, in this implementation, φ β Λ ^ 1J is used to convert the thickness of the i-th nitride semiconductor film. However, if the thickness of the π ′ 2 nitride semiconductor film is changed, The same effect can also be obtained. In addition, in this embodiment, the thickness of the third nitride semiconductor film constituting the ρ-side multilayer film layer 8 is changed. However, if the thickness of the fourth nitride semiconductor film is changed, The same effect can also be obtained when the thickness is changed. [Embodiment 8] Compared with Embodiment 1, when the η-side multilayer film layer 6 is grown, an In0.03Ga0.97N non-removed impurity is first grown. The first nitride semiconductor film with a thickness of 25 angstroms was formed; secondly, a second nitride semiconductor film with a thickness of 25 angstroms was formed by forming GaN without removing impurities. Next, an In composition ratio was slightly grown. Increase the InGaN layer with a thickness of 25 angstroms; A non-removed impurity GaN layer having a thickness of 25 angstroms; a non-removed impurity GaN layer having a thickness of 25 angstroms is then grown. According to the foregoing description, the In composition of each layer of the first nitride semiconductor film The ratio gradually increases until the first layer is In (). 3Ga〇7N, and they are stacked on each other in the order of the first layer + the second layer to form a superlattice structure with a total film thickness of 10 layers. The η-side multilayer film layer is 500 angstroms. In addition, the same as in Example 1, when the ρ-side multilayer film layer 8 was grown, a Mg doped with a concentration of 5 × 1019 / cm3 was grown, and the film thickness was 110th. @ ： F. (CNS) Ai {210χ ^ · ί7) ™ I nn »—1 ϋ nnn I ^ OJI n« I St If t— I nt {Please read the precautions on the back before filling this page) Wisdom of the Ministry of Economy Printed by the Consumer Cooperative of the Property Bureau 4371 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economy A fourth nitride semiconductor film with a thickness of 25 angstroms and formed of undoped GaN; and then a 'doped with the same concentration A p-type AIGaN layer with a Mg and A1 composition ratio slightly increased and a thickness of 25 angstroms; an undoped GaN layer with a film thickness of 25 angstroms is then formed. The system gradually increases the A1 composition ratio of each layer of the third nitride semiconductor film until the third layer is Al0.2Ga0.8N, and forms a layer in which the third layer and the fourth layer are alternately stacked. P-side multilayer film with 4 layers each with a total film thickness of 200 Angstroms-Except for the above, the other is the same as the LED element described in Example 1, and according to this, a characteristic similar to that described in Example 1 can be obtained Approximately the same element β, and 'in this embodiment, the composition of the group III element of the first nitride-rich conductor film is changed. However, if the second nitride semiconductor film is used as a ternary mixed crystal and a quaternary mixed crystal, The same effect can also be obtained when a nitride semiconductor is used, and the composition of the group III element is changed. In addition, in this embodiment, the group III element composition of the third nitride semiconductor film constituting the ρ-side multilayer film layer 8 is changed. However, if the fourth nitride semiconductor film is used as a ternary mixed crystal and a quaternary mixed crystal, The same effect can also be obtained when a crystalline nitride semiconductor is changed and its in-group element composition is changed. [Example 9] Compared with Example 7, the ρ-side multilayer film 8 does not have a multilayer film structure, but grows a Mg doped with a concentration of 5x1ο 1 9 / Cm3, a film thickness of 200 angstroms, P-side cladding layer formed by p-type AU, iGa0.9N layer p. 111 " One-One-__ _____ _ ^^ 1 ^^ 1 ^^ 1 ^^ 1 n H1 — '^ 1 «^^ 1 ^^ 1 ^^ 1 ^^ 1 ^ 1 * ^ 1 · — ^ if ^^ 1 t 1 ni κι----1-li 1 (Please read the notes on the back before filling this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative 4371 03 a: B7 V. Description of the invention () 18, except that the manufactured LED elements are the same as in Example 7, and the obtained LED elements are roughly the same as in Example 2. Equal treatment. [Example 10] Compared with Example 8, the P-side multilayer film layer 8 does not have a multilayer film structure, but grows a Mg doped with a concentration of 5xl019 / cm3, a film thickness of 200 angstroms, The p-side covering layer 18 formed by the p-type Alo.tGao.gN layer is the same as that of Example 8 except that the obtained LED elements are substantially the same as those of Example 2. Characteristics. [Embodiment 1 1] Compared to Embodiment 8, the In composition system of the first nitride semiconductor film used to form the η-side multilayer film is the reverse of that described in Embodiment 8, and is used to form the p-side multilayer. The A1 composition of the third nitride semiconductor film of the film layer is also opposite to that described in Example 8. That is, the closer the In composition system of the first nitride semiconductor film is to the active layer, the less the A1 composition system of the third nitride semiconductor film is to be far from the active layer. In addition, the produced [ED The elements are the same as those in the embodiment 8, and the obtained LED elements have substantially the same characteristics as those in the embodiment 8. [Embodiment 12] Compared with Embodiment 1, the LED element made in this embodiment grows first when growing the η-side multilayer film layer 6-formed by In0_2Ga () without removing the impurities. The first nitride semiconductor film with a film thickness of 25 angstroms; page 112. Daiping (CMS & A1 specification (+ vi〇X37 公 #) ----------- ^ ----- --f Order --------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 43 71 0 3 A7 ------- B7_ 5 2. Description of the invention () Secondly, a second nitride semiconductor film with a thickness of 25 angstroms formed by Ino.wGaowN with unremoved impurities was grown, and the LED elements made in addition to this were the same as in Example 1. The same, and the obtained LED element system has approximately the same characteristics as in Example 1. [Example 1 3] Compared with Example 1, the LED element made in this example has a multi-layered p-layer film. At 8 o'clock, a third nitride semiconductor film with a film thickness of 25 angstroms and formed of p-type Alo.wGao.wN doped with Mg was first grown; secondly, a film thickness of 25 angstroms' was formed, and the film was formed with no Impurity of In Except for the fourth nitride semiconductor film formed by uGaQjN, the manufactured LED elements are the same as those in Example 1, and the obtained LED elements have approximately the same characteristics as those in Example 1. [Example 1 4] Compared with Example 1, 1 The LED element made in this example grows n multilayer film layers on the 6th # 'grow out first — formed by unremoved impurities, the film thickness is the first丄 Nitride semiconductor film; Secondly, a second nitride semiconductor film formed of unremoved impurities and a film thickness of M Angstroms, that is, relative to the embodiment [except for the first nitride The semiconductor film system is other than 200 angstroms, and the manufactured components are the same as in the embodiment! The obtained component system has approximately the same characteristics as in embodiment 1. Page 113 ----- ----- ^ -------- Order --------- ^ {Please read the notes on the back before filling this page) 4371 0 3 A7 __B7____ V. Intellectual Property Bureau of the Ministry of Economic Affairs Employee consumer cooperative seal? si Description of the invention () [Example 1 5] Compared with Example 1, when the LED element manufactured in this example grows the p-side multilayer film layer 8, a film thickness of 200 angstroms is grown first, and The third nitride semiconductor film formed from p-type Al0.05Gao.95N earning Mg; other than that, the manufactured LED elements are the same as those in Example 1, and the obtained LED elements are roughly Example 1 has equivalent characteristics. [Embodiment 1 6] As shown in FIG. 3, the nitride semiconductor device in Embodiment 16 of the present invention is a laser 2 having an active layer between a p-side region 80 and an n-side region 70. Polar body. The laser diode system of this embodiment 16 is manufactured by forming the following layers on a GaN substrate 50 of -80 / im thickness, respectively. (1) η-type GaN layer 52 which is 3βιη thick and is made of GaN doped with Si; (2) InD1Ga which is 0-1βm thick. 9N layer 53: (J) η-side cover layer 5 4 of superlattice structure formed of InxGa-xN / n-type GaN; (4) (5) (6) (7) (8) 3pm thick, formed by Si-doped n-type GaN light-guiding layer 55; active layer 56 composed of multiple quantum wells of In0.4Ga0.6N / In0.02Ga0.9sN; 200 Angstroms thick; Al doped with Mg. 2Ga〇.8N layer 57: 〇_1 / zm thick, p-type GaN light guide layer 58 doped with Mg; p of superlattice structure formed by AlyGai_yN / p-type GaN p. , +＋; 艾 总 屮 圏 屮 圏. 4.¾¾ (ΟΪ ^ ΑΪ ^ ΙΓΤΐίϊο ".Λ; 4371 03 V. Description of the invention () Side cover 5 9; (9) 〇′〇5 # m 厚 、 由A P-type GaN contact layer 60 of ... is formed, wherein the n-side cover layer 54 is composed of a 25 Angstrom thickness GaN film doped with Si, and a 25 Angstrom undoped mAh · The 240 layers of the small film are alternately constituted by each other, and the whole system has n-type conductivity. Here, as for the ^ -side cover layer 54, the composition of In in the undoped Inx (} ai.xN film The closer the system is to the active layer, the more the χ value is sequentially changed in the range of 0 to 0.3, so that the composition shape of the n-side cover layer 54 Gradient 3 In addition, the active layer 56 is composed of 4 Ino.uGaQbN well layers doped with Si, and InowGaG.wN barrier layers doped with Si, with a thickness of 50 Å. The 'P 恻 coating layer 59 consists of a 12-layer layer of 25 angstroms, a GaN film doped with Mg, and an undoped AlyGaiyN film of 25 angstroms. , The whole system has p-type conductivity. Here, as far as the p-side cover layer 59, the closer the A1 composition in the undoped AlyGai-yN film is to the active layer, the less interesting, where the y value is In the range of 0 ~~ 2, the composition changes sequentially, so that the composition of the p 恻 covering layer $ 9 forms a gradient. In this embodiment 16, it is used in each layer of apes forming the above (υ ~ (9)). The etching method forms a ridge shape with a width of " m and a length of 450 " and a P-type contact layer 60 formed of Ni / Au. The electrode 6b is an n-type on one side of the ridge. Ti / Al formed on the GaN layer Page 115 w: .ά (Please read the precautions on the back before filling this page)

n 1 .1 n · 1 It I · 1 I Printed by R Industrial Consumer Cooperative, Intellectual Property Bureau, Ministry of Economic Affairs ". 4371

.J A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () η-side electrode. In addition, in the case of the laser diode of Example 1, the two end surfaces of the ridge form two pairs of Ti02 / Si0 ;! 'so that the reflection coefficient of the two end surfaces is 50%. For the semiconductor laser diode made by the above method, it can obtain continuous vibration effect at room temperature and a small initial value current. As mentioned above, if the multilayer film is separated from the active layer, the same effect as that shown in Example 6 can be achieved. [Embodiment 1 7] Embodiment 7 is an embodiment related to Embodiment 2 shown in Fig. 4. In this embodiment, 'the substrate 1 formed of blue quartz (c-plane) was first placed in a MOVPE reaction vessel, and hydrogen was passed through, and the temperature of the substrate was raised to 1 050 degrees C. According to In order to clean the substrate. (Buffer layer 102) Next, the temperature is lowered to 5-10 degrees c, and a carrier gas containing hydrogen, a raw material gas containing ammonia, and TMG (trimethylgallium) are used to grow a substrate made of GaN on the substrate 1. A buffer layer 102 having a thickness of 15 angstroms was formed. (Undoped GaN layer 103) After the buffer layer 10 is grown, only the supply of tmG is stopped, and the 116th page is opened. -— ------------ ^ -------- Order --------- Line I (Please read the notes on the back before filling this page) Α7 43 71 0 c 5. Description of the invention () The temperature rises to 1 ° c. When the temperature is reached, the raw material gas with TMG 'and ammonia gas are also used to grow a GaN layer 103 (n-side contact layer 4) formed of _ formed by unearned impurities and having a film thickness of 1.5. Secondly, the temperature was maintained at 1050 ° C, and the same was used to add TMG source gas, ammonia gas, and silane gas impurity gas to grow into a film thickness of 2.25W m, and the concentration of y mixed with 4 5xl Η side contact layer 4 made of GaN / cm3. (η 恻 First multi-layer film layer 105) Next, the supply of silicon hafnium gas is stopped, and the temperature is also set to 1050 ° C. TMG 'ammonia gas is used to grow a thickness of Nai, without doping. The impurity GaN layer is then additionally supplied with a dream firing gas at the same temperature to grow a GaN layer having a thickness of 25 angstroms and a Si concentration of 45 × 10 cm 3. According to this, a layer group formed by forming a layer A consisting of a GaN layer having a thickness of Angstroms and an undoped GaN layer, and a layer B consisting of a GaN layer having a thickness of 25 Angstroms doped with si impurities is formed Next, the layer group was stacked with 25 layers to have a thickness of 25 00 angstroms, and a n-side first multilayer film layer 105 having a superlattice structure was grown. (Second multilayer film layer 106 on the η side) Next, a second nitride semiconductor film i06b having a film thickness of 40 angstroms and formed of GaN without any impurities is grown at the same temperature: 117th Page (C: NS) AS 297 (Please read the precautions on the back before filling in this page) ιt -------- Order --------- Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs System 4371 0 3 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 5. After the description of the invention ('), set the temperature to 800 ° C, and use TMG, TMI, and ammonia to grow a thickness. It is 20 angstroms' of the first nitride semiconductor film 06a formed of undoped InOuGau. After that, the operation was repeated, and 10 layers were stacked on each other in the order of 2 + 1, and finally a second nitride semiconductor film 106b formed of undoped GaN with a thickness of 40 angstroms was grown. The second multilayer film with a superlattice structure and a film thickness of 640 angstroms. (Active layer 7) Next, a 200 angstrom barrier layer formed of undoped GaN was grown, and the temperature was set to 800 ° C and TMG, TMI, and ammonia were used. A well layer having a thickness of 30 angstroms and formed of undoped In 0.4 Ga 0.6 N was grown. After that, in the order of the ten barriers of the barrier + the barrier + the well + .... + the barrier, five barrier layers and four well layers were stacked on each other to grow a multiple quantum with a film thickness of 1120 angstroms. Active structure 7 composed of well structure. (P-side multilayer film cover layer 108) Next, the temperature is set to 1 050 degrees C 1 and TMG, TMA, ammonia, and CP2Mg are used to grow a thickness of 40 angstroms. 'Mg doped impurity concentration is 1xl020 / cm3 of the third nitride semiconductor film 108a formed by P-type Al0.2Ga0.sN, and then set the temperature to 800 ° C, and use TMG, TMI, ammonia, and cP2m§ to grow a A thickness of 25 angstroms and a P-type 笫 118 with a Mg impurity concentration of 1x10 / cm3 _____ _ ____n_-one or two. '&Quot; " " L ~ one ~ ._ < Please read first Note on the back, please fill out this page) -1 -------- Order --------- 43 7 ί 03 Α7 ____ Β7 V. Description of the invention () A [〇. (Π G a 〇 〇9 7N formed a fourth nitride semiconductor film 〇8b. After that, it is repeatedly formed and stacked in the order of 3 + 4-with 5 layers each, and finally a film is grown. A p-side multilayer film covering layer (P-side contact layer 9) having a thickness of 40 angstroms and a third nitride semiconductor film formed by undoped GaN with a superlattice structure of 〇8a and a thickness of 365 angstroms ) Next, set the temperature to 105 Degree C, and using TMG, ammonia, and Cpa Mg, a p-side contact layer 9 was formed with a thickness of 700 angstroms and doped with p-type GaN doped with Mg impurity concentration 1 X 1 020 / cm3. After the reaction is completed, the temperature is lowered to room temperature, and the wafer is placed in a reaction container in a nitrogen environment, and buried in a clean place at 700 ° C to further reduce the resistance of the P-type layer. After the cleaning process, the wafer is taken out from the reaction container * and a mask pattern of a predetermined shape is formed on the surface of the uppermost P-side contact layer 9 '. Then in a RIE (reactive ion etching) device, from the p-side The contact layer is etched to expose the surface of the η-side contact layer 4 shown in Figure 4. After etching, it is formed over the entire P-side contact layer on the uppermost layer—200 angstroms in thickness, containing Ni and Au light-transmitting P electrode 10; and a p-electrode 11 formed by Au with a thickness of 0,5 " m 'for welding is formed on the p-electrode 10. In addition, the n-side exposed by etching The surface of the contact layer 4 is formed with an η electrode 12 ′ containing w and eight 1 to form a led element. Please read the precautions on the back before filling out this page.) -------- Order · I ----- Printed by the Consumer Cooperatives of the Wisdom and Time Bureau of the Ministry of Economic Affairs; * 43 71 0 3 Λ7 β: 5. Description of the invention () When the forward voltage of the LED element is 20mA, it “shows pure green light of 52nm” and its Vf is only 3.5V. Compared with the conventional multi-quantum-well LED element, its Vf is reduced by 1.0V, while output is increased by more than 2 times. Therefore, it is only necessary to obtain a characteristic substantially the same as that of a conventional LED element at 10 mA. In addition, as far as the structure of the conventional LED element is concerned, it can also be formed sequentially—on an i-th buffer layer formed of GaN—a second buffer layer formed of undoped GaN, An n-side contact layer formed of GaN of Si, an active layer formed of the same multi-quantum well structure as in the embodiment, a single A101 (^ 0 state layer) doped with Mg, and a Mg doped layer P-side contact layer made of GaN. [Example 1 8] Compared with Example 17, the LED element manufactured in this example changes the active layer 7 as follows, and the other is the same. (Active Layer 7) Printed by the consumer cooperation agreement of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) Secondly, grow a barrier layer with a thickness of 250 angstroms and formed by undoped catties Then set the temperature to degree c, and use tmg, TMI, and ammonia to grow out of it—well layer 3 with a thickness of 30 angstroms and formed of undoped hMGauN, and then use barrier + well + Barrier + well + ... + + the order of the barriers are stacked on each other into 7 layers of barrier walls and 6 layers of sacral layers, thereby growing a membrane Active layer 7 composed of a multiple quantum well structure with a thickness of 193.0 Angstroms. ___ 120th buy +, '.Cannon Mountain m (CNS) .- V1 irn ------....---- 4371 03 Λ8 Β8 C8 D8 hole, Shenwai 1 patent scope The LED element obtained based on this will display f. Shangtai I (please read the precautions on the back before filling out this page) 4 7 〇nm pure cyan light, and at the same time have the same effect as shown in Example 丨 7. [Example 1 9] Compared to Example 丨 7, the LED element made in this example changes the activity as follows Layer 7 'is otherwise the same. (Active layer 7)

Eighth 'grow a barrier layer with a thickness of 250 angstroms and y H opened by undoped GaN', then set the temperature to 800 ° C, and use TMG, TMI, and Shenluo4 'According to this, a well layer with a thickness of 30 angstroms and formed by undoped InO3GaQ 7N was grown. Then, in the order of Chenbi + well + barrier +… 'τ barrier, 6 barrier layers and 5 | 1' were stacked on each other to grow a multiple quantum well structure with a film thickness of 1650 angstroms. The active layer 7 is composed. The obtained LED element at this time has a forward voltage of 20 mA, which shows that the Ministry of Economic Affairs is wise. The staff consumer cooperative printed a purple 4 7 0 nm pure cyan light. Shows the same effect. [Embodiment 2] The LED element produced in this embodiment is sealed in the same manner as in Embodiment 7 and the active layer 7 is changed as described below, and the others are the same. ___ Page 121 4371 03 Λ 8 88 C8 D8 Ministry of Finance and Economics is an employee of the Bureau; rt fee printed by the cooperative 6. Scope of patent application (active layer 7) Secondly, a film thickness of 250 angstroms, grown The barrier layer formed by doped GaN is then set to a temperature of 800 ° C, and TMG, TMI, and ammonia are used to grow a thickness of 30 angstroms from an undoped InmGao. . ^ N layer Then, in the order of barrier wall + well + barrier wall + well + ... + barrier wall, 7 layers of barrier layers and 6 layers of well layers were stacked on each other to grow a multiple quantum well structure with a film thickness of 1 930 The active layer 7 3 thus constituted obtained an LED element exhibiting a 500-nm cyan light at a forward voltage of 20 mA, and had the same effect as that shown in Example 17 at the same time. [Example 2 1] Compared to Example 17, the LED element made in this example changes the active layer 7 as follows, and the other is the same. (Active layer 7) Secondly, a film thickness is grown. A barrier layer of 250 angstroms made of undoped GaN is then set to 800 ° C, and TMG, TMI, and ammonia are used to grow a 30 angstrom thick, non-doped GaN The well layer formed by In.35Ga.65N. Then, in the order of barrier wall + well + barrier wall + well + ... · + barrier wall, four barrier layers and three well layers are stacked on each other, thereby growing a multiple quantum well structure with a film thickness of 1090 Angstrom The active latent 7. P.122 ^ ^ ㈣㈣ 料 心. (^ 了 "格 （2! 0Χ297 ^ Τ ~ ---- 装 ((Please read the precautions on the back before filling in the clothes page) 4371 0 3 ^

CS 6. Scope of patent application The LED element obtained in this way displays a green sound of 500 nm at a forward voltage of 20 mA and has the same effect as that shown in Example 17 at the same time. [Example 2 2] Compared with Example 17, the LED element manufactured in this example did not grow the second multi-layer film layer 6 on the η side, and the others were the same. The element characteristics and light-emitting output of the LED element thus obtained are slightly lower than those shown in Example 17 but are better than the light-emitting output of the conventional LED element. [Example 2 3] Compared with Example 17, the LED element manufactured in this example was changed in the p-side multilayer film cover layer 8 as described below, and the others were the same. (Single film cover slip on the p side 1 8) Ministry of Economic Affairs. ¾ Property Bureau S Gong Consumer #cooperative society printing, # 衣 i- (Please read the precautions on the back before filling this page) Under the temperature of 1050 degrees C Using TMG, TMA, ammonia, and Cp2Mg, a thickness of 300 angstroms was grown from p-type AlO.] 6Ga〇.S4N doped with Mg impurity concentration of 1 × 10 2i) / cm3. P 恻 single membrane overlay. Although the cover layer formed in the LED element obtained in this embodiment is not a superlattice, but a single layer, it is slightly inferior to the one shown in Example 1 in combination with other layers, but its The same effect can be obtained. In addition, compared to multiple layers, the manufacturing process for a single layer is simpler. Page 123. Only. ¾ Dimension ㈡) λ… for the celery) 43 71 0 ο

AS Β8 CS DS 6. Scope of patent application [Example 2 4] Compared with Example 17, the LED element made in this example φ changes the first multi-layer film covering layer 1 on the η side as follows, Others are the same. (η-side multilayer film layer 105) An A layer composed of a 200 Angstrom undoped GaN layer and a 25 Angstrom thick Si-doped impurity at a concentration of 1 × 10 are formed. 8 layer B / cm3 of Alo.iGao.gN layer 'forms a layer group consisting of layer A and layer B', and then 20 layers of this layer group are stacked to a thickness of 2500 angstroms, and then grow A first multi-layer film layer 105 on the n side is obtained. The LED element thus obtained had approximately the same characteristics as those of Example 17 and had a good effect. [Example 2 5] Compared with Example 17, the LED element manufactured in this example was changed in the n-side contact layer 4 as described below, and the others were the same. (η-side contact layer 4) At a temperature of 1 050 ° C, using & a raw material gas with TMG, a gas, and an impurity gas added with our gas, grow to a film thickness of έm, from The r-side contact layer formed by doping GaN with a Si concentration of 4518 3-^ xt .5X10 / cm is sufficient. 4 »The LED element technology obtained by this method is roughly the same as in Example 1 7 Equal t, please read the notes on the back to fill in the stomach.) When loading the wisdom of the Ministry of Economics-printed by the Bureau of Labor and Industrial Cooperation, page 124. Mu Xin, Chi Wen It] Zhongmin Zhangjing 4 Hua (rNS)丨 ^: 34 ϋ abcd Printed by the Consumer Finance Cooperative of the Smart Finance and Employment Bureau of the Ministry of Economic Affairs Ⅵ. The characteristics of the scope of patent application have a good effect. [Embodiment 2 6] Embodiment 26 is an embodiment related to Embodiment 3 shown in Fig. 5. In this Example 26, a substrate 1 formed of a quartzite (C surface) is first placed in a reaction container, and the gas in the container is replaced with hydrogen, and then, while hydrogen is passed through, The temperature of the substrate was raised to 105 ° C, and the substrate was cleaned. In addition, in addition to the blue quartz C-plane as the main surface, the substrate 1 may also be a blue quartz with blue-silica R-plane and A-plane as the main surface, or like spinel (] VigAl204). Insulating substrate, or semiconductor substrates such as SiC (containing 6H, 4H, 3C), Si, ZnO, GaAs, GaN, etc. (Buffer layer 202) Next, the temperature is lowered to 510 ° C, and a carrier gas containing hydrogen, a raw material gas containing ammonia, and TMg (triallium gallium) are used to grow a substrate made of GaN on the substrate i. And a buffer layer 200 with a film thickness of 200 angstroms. (The first n-side nitride semiconductor layer 203) After the buffer layer 205 is grown, only the supply of TMG is stopped, and the temperature is returned to 105 Qc. When the temperature is reached, the raw material gas added with TMϋ is used, and ^ t ^ ^ grows to a thickness of 5 # m and a 1 n side lice compound conductor made of un-doped GaN. Page 12S — ——-_—...... i:;. · Ί5 · {'ηυχ2 ·) Ί ^-^: I —i: 1- I— I--= ^ J " " .- ° ( (Please read the note on the back before filling in the title page) 43 7 1 〇A8 l B8 C3

-—___ DS VI. Patent application scope $, -0J. The first n 恻 nitride semiconductor layer 203 is grown by using a temperature that is longer than that of the previously-formed 'punch layer-0 2', for example, 900-1000 °. In addition to being formed of GaN, It can be composed of Ir ^ AlyGai ... X + ys0 'and can obtain a nitride-rich m-layer with less crystal defects, which is preferably formed by GaN' or a y value, A1yGa "yN below 0 2 It is better to form a. In addition, it can be grown thicker than the buffer layer. It is usually on 纟 0W. Because this layer is generally: a doped layer, its properties are close to true semiconductors ; Although the resistivity is larger than 0_2Q.Cm ', but if doped with η-type impurities such as Si and Ge that are more than 1 n side nitride semiconductor layer, it can be used as a layer that reduces the electrical conductivity and the rate. 2nd side nitride semiconductor layer 204) Next, set the temperature to 1050 ° C and use TMG and ammonia gas to grow an undoped GaN layer with a thickness of 20 angstroms, and then, Additional supply of silane gas' to grow a GaN layer with a thickness of 20 angstroms and a doped Si concentration of 1 × 1019 / cm3, and then stop doping Si to grow a thickness 20 Angstrom, Unearthed GaN Layer = > Based on this, a layer A consisting of a 20 Angstrom undoped GaN layer and a Si layer doped with Si with a thickness of 20 Angstroms are formed. Layer group formed by B layer composed of impurity GaN layer 'Then, the layer group is stacked to form a 2n-side nitride semiconductor layer having a thickness of 1 μm and formed by a modulation-doped GaN layer 2〇4 〇 --- I-I 1----- --- Order (please read the notes on the back before filling this page) _____s Page 126 43 7 丨 ϋ. Λ 8 Β8 CS D8 VI. Patent application scope (3η-side nitride semiconductor layer 205) Secondly, the temperature of 'stop supply of silane gas' is also set to I 05 ° C' to grow a thickness of 100 埤 and formed of undoped GaN The 3n-side nitride semiconductor layer 205 is the same as the above, except that it can be formed of GaN. 1 It can also be made of InxAlyGai-x-yN (0 < x, 〇sy, χ + yu), the composition is not limited, but in order to obtain a nitride semiconductor layer with less crystal defects, its system is preferably GaN or a y value of 0.2 AlyGu 'or InxGai-xN with a χ value of 0.1 or less is preferred. If it is composed of InGaN, if a nitride semiconductor containing A1 is formed thereon (then prevent the nitrogen containing A1) (Active layer 7) Next, set the temperature to 800 ° C and replace the carrier gas with nitrogen, and use TMG, TMI, and ammonia to grow—thickness of 30 angstroms, An active layer 7 having a single quantum well layer structure is formed from a layer formed by undoped In "Ga () Ν. (P-side multilayer film layer 108)

Secondly, the temperature was raised to 105 ° C, and TMg, tma, gas, and Cp ^ Mg were used to grow a p with a thickness of 20 angstroms and an impurity concentration of lxl02VCm3. The layer formed by type A1O | Ga〇9N 'was then grown using TMG' ammonia gas and Cp2Mg—a thickness of 20 angstroms and a ρ-type of impurities with a concentration of 1xl019 / cm3 in the concentration of N # 127 Page wood:? 'Ru Guang ·: 丨 Applicable 屮 阄 丨 Wall today :) Λ4.6.3 (43 710 ,: B8

‘, CS II _ ___ one six, the layer formed by the scope of patent application. Thereafter, it was repeatedly operated and stacked in the same order to form a P-side cover layer having a superlattice layer and a total film thickness of 0.8 M m. --------- Clothing-(Please read the note on the back + ^ before filling this page) (P-side contact layer 208) Then 'Set the temperature to 800 degrees c' to grow a thickness of 30 angstroms, the first nitride semiconductor film formed of undoped InQ.iGa 0.9N, and then the supply of TMI was stopped to grow a thickness of 30 angstroms and the concentration of Mg doped impurities to 1 X 1 〇 A second nitride semiconductor film formed of GaN at 20 / cm3. Thereafter, it is repeatedly operated and stacked on each other in the same order to form a p-side contact layer 208 having a total film thickness of 600 angstroms. After the reaction is completed, the temperature is lowered to room temperature ', and the wafer is placed in a reaction container in a nitrogen atmosphere, and clean processing is performed at 700 ° C, thereby reducing the resistance of each P-type layer. After the cleaning process is completed, the wafer is taken out of the reaction container, and a mask pattern of a predetermined shape is formed on the surface of the p-side contact layer 20 08 at the uppermost layer, and then in a RIE (reactive ion etching) device, Etching is performed from the p-side contact layer side, and the surface of the 2n-side nitride semiconductor layer 204 shown in FIG. 5 is further exposed. Ｍ 济 部 智慧 财 447 员 消 # Cooperative prints a 'transparent p-electrode' with a thickness of 200 angstroms and containing m and Au on the entire surface of the p-side contact layer after the last name engraving. 〇; and on the p-electrode 10 is formed a solder, a thickness of 0, P pad electrode 11 made of Au. In addition, the surface of the second η-side nitride semiconductor layer 204 exposed by etching is formed with an η electrode 12 containing w and A1. Finally, as shown in FIG. 5, a ρ electrode is not formed to protect the electrode # Scale d (rNS) /, 4¾ divisions (--------------------------- Λ 8 4371 〇 g D8 ...... I … 6. The scope of patent application is 10, and the insulating film I 2 composed of Si0 2 is used to separate the wafer into 350 square LED elements by using a line drawing device. When the forward voltage of the LED element is 20 mA, it displays 52 〇nm pure green light, and its Vf is 3.2V, at 20mA, it can reduce Vf by 0.2 ~ 0'3V, and can also improve the rotation rate by 10% ^ In addition, 100 implementations were manufactured The ED element shown in Example 2 was measured at a forward voltage of 20 mA, and the Vf 'was measured. The results show that the vf of these elements are evenly divided between 3.2 and 3.3 V, which is extremely concentrated. 2 7] Compared to Example 26, when the p-side contact layer is grown in the LED element manufactured in this example, an undoped I n Q ″ G a 0.9 N layer and Mg doped impurities are added. The stacking order of GaN with a concentration of 1 x 1 is reversed. Others are the same as those in Example 2 6. [Example 2 8] Compared to Example 26, when the P-side contact layer is grown in the LED element manufactured in this example, the composition system of the second nitride semiconductor is An InQ.Q5Ga0. 9 5N layer, and the other are the same as in Example 26. [Example 29] Compared to Example 26, the LED element made in this example is grown when the p-side contact layer is grown. 2Nitride semiconducting film is a layer of Mg doped impurity with a concentration of lxl02 <) / cm3 of an In005Ga〇95N layer. 'Others, page 129A. See silver scale 4 for use in China Net Yan Jiapu Ping (CNS) Λ4ΐ ^ *. (210 ./297 公 4) (Please read the general meanings on the back before filling in the page) Equipment, 1T Intellectual-Finance 4 Bureau of the Ministry of Economic Affairs 8; 工 "# Cooperative Printing 4371 AS B8 CS D8 The scope of the applied patent is the same as that of Example 26. [Example 3 0] Compared with Example 26, the ridge, * γ 丨 Shi 2 The LED element formed in the example is M___ when the P-side contact layer is grown. The -nitride semiconductor film is a Cm'-doped In〇 () 5Ga0.95N layer, the others are

Mg impurities and concentrations are the same as those in Example 26. [Example 3 1] Compared to Example 26 ’, the growth of the coffee element system f produced in this example? In the case of the side contact layer, the first semiconductor semiconductor film was doped with a dopant, a concentration of 1 × 1019 / Cm3, and the others were the same as those in Example 26. [Example 3 2] According to Example 26, when the coffee element produced in this example grows the P-side contact layer 208, the Mg impurity concentration is IX 1 Π- 0/3, and Crn is substituted. The first formed by InQ! Ga " N! A nitride semiconductor film is formed of "the first nitride semiconductor formed of an undoped InO | Ga " N", and at the same time, it is formed of an GaN-doped GaN with an impurity concentration of ixi〇 " / cm3. 2 nitride semiconductor film instead of the second nitride semiconductor film formed of GaN doped with Mg impurities and a concentration of 1 X 1020,3 Cin, and the first nitride semiconductor film system may be located at the uppermost layer Others are the same as those in Embodiment 2 6. --------- Equipment -------- Order ------ Class (Please read the notes on the back before filling this page) Wood & Page 130 Two Enthalpy Nets · ((: NS) Α4 is present (210; < State Public 437Ϊ 03 _

DS VI. Patent Application Fan Garden [Example 3 3] Compared with the implementation of State 26, the LED elements made in this example are in addition to the P-side contact layer 208, which grows in the following manner, and the others are related to the implementation. Example 26 is the same, that is, the temperature is set to 800 degrees c 'to grow a first nitride semiconductor film formed of In0. [Ga0.9N] with a thickness of 30 angstroms and then, slowly Slowly reduce TMI so that the composition gradually changes from InojGao.gN to GaN in the thickness direction to form a composition gradient layer. After TMl is reduced to 0, a thickness of 30 angstroms is grown from the Mg-doped impurity concentration. A second nitride semiconductor film formed of GaN of 1 X 1 02Q / cm3. After that, the TMI was gradually increased so that the composition gradually changed from GaN to Gao.gN in the thickness direction, and a composition gradient layer was formed to grow out-a thickness of 30 angstroms and an undoped InO1Ga The first nitride semiconductor film formed by 0.9N. By repeating the above operation, 10 layers of the first nitride semiconductor film and the second nitride semiconductor film were deposited on each other, thereby growing a P-side contact layer 208. Compared with the conventional LED elements, the LED elements described in Examples 27 to 33 are the same as those in Example 26, and all have good light emitting characteristics. In addition, in the case of the conventional p-side contact layer formed of InGaN, since InGaN has a large light absorption in a region with a short wavelength, the p-side contact layer system will appear yellow, and The wavelength of light generated by the active layer is shifted toward the long wavelength side. However, since the p-side contact layer of the present invention has a superlattice structure, it has a shorter absorptivity of light at a shorter wavelength than the conventional p-side contact layer formed by a single layer of In (3aN). Small. So, page 131. From the generation of KJt 丨 W 闼 京 闼 嗥 (Let's ----------------------------- --------------- --------- 1 installed ------- ordered ----- line {Please read the precautions on the back first Fill in this page} 03 Λ8 B8 CS TJ8 6. The scope of the patent application The P-side contact layer system of the present invention can prevent the shift to the long wavelength side, and at the same time, it can improve the light transmittance. Figure 7 shows a comparison between GaN and InGaN. For the formed multi-layer film of the superlattice structure of the present invention, the pattern of light transmittance with respect to wavelength. The multi-layer film is formed by stacking GaN (20 angstrom) and InGaN (20 angstrom) on each other, and It contains Mg impurities and has a ρ-type layer with a carrier concentration of 4 × 10 IS / cm3. In addition, Figure 7 also shows the habit of a single layer of Ino. ^ GamN (film thickness 0 · 1 2 4 m). Known light transmittance. As shown in FIG. 7, compared with the conventional single-layer film, the multilayer film of the superlattice structure of the present invention has a thickness of 400 nm. 'The transmittance of light is significantly different, and it is clear from the figure that the multilayer film of the superlattice structure of the present invention is near 400 nm, and the transmittance of light is significantly better. In addition, the example shown in FIG. 7 Each resistivity p of the multilayer film of the invention and the conventional single-layer film is 0.5. In addition, the transmittance shown in FIG. 7 is the transmittance of light on a blue quartz substrate. Relative value at 100%. [Embodiment 3 4] Embodiment 3 4 is an embodiment related to Embodiment 5 shown in Fig. 8. In this embodiment, a blue quartz (C-plane) ) The formed substrate 1 is placed in a MOVPE reaction vessel ', and hydrogen is passed through, and the temperature of the substrate is raised to 105 ° C, so that the substrate is cleaned. Page 132 wood: y.烺 Ruler. 'Ί 用 用 中 ㈤μ? · 家 样 肀 (cns :) --------- t ^ -------, 玎 ------ Φ (Please read the back first Please fill in the ^ page of the unintended matters) Ministry of Economic Affairs', 4 fortune 4. Bureau for printing 3 labor cooperatives printed 2. Public epidemic

Λ 8 m cs DS 4371 03 VI. Patent application scope (buffer layer 102) Then 'lower the temperature to 510 degrees C' and use a carrier gas with hydrogen, a raw material gas with ammonia, and TMG (trimethylgallium) to A buffer layer 102 formed of GaN and having a film thickness of 150 angstroms is grown on the substrate i. (Un-doped GaN layer 103) After the buffer layer 10 is grown, the supply of τ μ G is stopped and the temperature is raised back to 105 ° C. When the temperature reaches 1050 In the case of degree C, the raw material gas added with TMG and ammonia gas are also used to grow an undoped GaN layer 103 formed by undoped GaN with a film thickness of i.5 / zm (n side Contact layer 4) Secondly, 'maintain the temperature at 1050 ° C, and also use TMG-added source gas, ammonia gas, and silane-containing impurity gas' to grow into a film thickness of 2.254m. There is an n-side contact layer 4 formed of GaN having a si concentration of 4.5 × 1018 / cm3. (The first multilayer film layer on the η side is 3 0 5) Next, the temperature of 'stop supply of silane gas' is also set to 1050 ° C, and TMG and ammonia gas are used to grow out. The thickness is 2000 angstroms. The lower layer 305a made of undoped GaN is then grown at the same temperature 'with additional supply of silane gas' to a thickness of 300 angstroms and formed of GaN doped with a Si concentration of 4.5x10I8 / cm3 Middle layer 305b, and then `` stop supplying the 夕 Xiu gas '' and grow at the same temperature to a page 133 虼 β scale remnants :: .. BU Ge Guijia skirt Λ ;. (CN'-) Λ 八 iM） One * — (Please read the precautions on the back before filling in this page) — * Packing. Order "-. Ministry of Intellectual Property and Finance Bureau, printed by Xiaogong Consumer Cooperative 43 7 1 〇3 Λ8 B8 C8 D8 6. The scope of the patent application is an upper layer 305c with a thickness of 50 Angstroms and formed of undoped GaN. Based on this, a first multi-layered layer 305 on the η side consisting of 3 layers with a total film thickness of 2 3 50 angstroms is formed. (Second multi-layer layer 3 0 6 on the η side) Next, at the same temperature, a second nitride semiconductor film with a film thickness of 40 angstroms and formed of undoped GaN is grown; The temperature was set to 800 ° C, and a first nitride semiconductor film formed of undoped InO.13Ga0.87N with a thickness of 20 angstroms was grown using TMG, TMI, and ammonia gas. After that, iterative operation is repeated, and 10 layers are stacked on each other in the order of 2 + 1 and finally a second nitride semiconductor film 1 of 40 angstrom thickness and formed of undoped GaN is grown. Based on the superlattice structure, a second multilayer film 306 on the η side with a total film thickness of 640 angstroms is grown. (Active layer 7) Next, a 200 angstrom barrier layer formed of undoped GaN was grown, and the temperature was set to 800 ° C, and TMG, TMI, and ammonia were used. A well layer formed by undoped In0 4Ga0 6N is grown to a thickness of 30 angstroms. Then, in the order of barrier wall + well + barrier wall + 丼 + .... + barrier wall, five barrier layers and four well layers are stacked on each other, thereby growing a multiple quantum with a film thickness of 1120 angstroms. Active structure 7 composed of well structure. Page 134 Chinese style 夂 (CNS) Λ grid (210 ;, '' :: '.' 7 public hair) in the paper scale ----------- Shixin --n _ _ _ T n _ n In ί_: Ί-(Please read the precautions on the back before filling out this page) ^ 齐 ^ 智 ^^ It is printed by the Bureau ’s Consumer Cooperative

4371 03 | DS Wisdom 5 of the Ministry of Economic Affairs: Printed by the Consumer Council of Lingju. 6. Patent application for dry enclosure (P side multi-layer film covering layer 1 08). Second, set the temperature to 1 050 ° C and use TMG, TMA, ammonia. Gas and CpsMg, a third nitride semiconductor film with a thickness of 40 angstroms and a P-type Al0.2Ga0 SN doped with Mg impurity concentration of 1 × 1020 / cm3 is grown, and then the temperature is set to 800 ° C, and using TMG, TMI, ammonia, and CpnMg to grow a p-type Al.03Ga〇097N with a thickness of 25 angstroms, doped with Mg impurity concentration lxl02t) / Cm3 After the fourth nitride semiconductor film is formed, it is repeatedly operated and stacked in the order of 3 + 4 to form a layer with 5 layers each, and finally grows a film thickness of 40 angstroms from an undoped layer. The super-lattice structure of the third nitride semiconductor film formed by ZnOaN forms a p-side multilayer film f cap layer 108 with a total film thickness of 365 angstroms. (P-side contact layer 9) Next, set the temperature to 1 050 ° C, and use TMG, ammonia, and CpsMg 'to grow a p with a thickness of 700 angstroms and a concentration of lxl02Q / cm3 doped with Mg impurities. A p-side contact layer 9 formed of a type GaN. After the reaction is completed, the temperature is lowered to room temperature, and the wafer is placed in a reaction container in an argon atmosphere, and clean processing is performed at 700 ° C to further reduce the resistance of the P-type layer. After the cleaning process is completed, the wafer is taken out of the reaction container, and a mask pattern of a predetermined shape is formed on the surface of the p-side contact layer 9 on the uppermost layer. The p-side contact layer is etched, so that the surface of the η-side contact layer 4 shown in FIG. 8 is exposed. If, ^ (2Ϊ0 × 207 ^ 1 * ~~ '_———— ~ (Please read the back Please fill in this matter s) • in «^^ —- 1 4

, 1T Α8 Β8 C8 D8 ^ 3 71 〇 3 .—- κ, patent application scope. After the shaft engraving, the V-shaped contact surface of the uppermost p-side contact layer is further formed with a thickness of 200 angstroms, a translucent p-electrode 10 containing Ni and Au, and a weld is formed on the p-electrode 10 The thickness of the electrode is 0, and the thickness is izm. The P 塾 electrode formed by Au is 1. In addition, an n-electrode 12 'containing W and A 丨 is formed on the surface of the n-side contact layer 4 exposed by the notch to constitute ~ an LED element. When the forward voltage of the LED element is 20 mA, it displays pure green light at 520 nm, and its V f is only 3.5 V. Compared to the conventional multi-quantum-well LED element, its Vf is reduced by 1.0 V, and the output is increased. 2 times more. Therefore, as long as it is 10 mA, the characteristics similar to those of the conventional LED element can be obtained. In addition, when the voltage on each of the electrodes on the η layer and the p layer was slowly applied in the reverse direction to measure the electrostatic withstand voltage of the LED element obtained as described above, the result was 1.5 times better than conventional. In addition, as far as the structure of the conventional LED element is concerned, it can also be sequentially formed on a first buffer layer formed of GaM—a second buffer layer formed of an undoped substance, N-side contact layer formed of GaN, an active layer formed of the same multiple quantum well structure as in Example 12, a single A10iGa09N layer connected to Mg, and a GaN earned from Mg The p-side contact layer formed. [Example 3 5] Compared with Example 34, Taiji & / α ... The LED element manufactured in this example is the same as the active screen 7 ′ except that the active screen 7 is changed as follows. _______ ___ _ 页 Page 136 paper team υ ❿ ------------------------------ nm If nn I n!. 1 --- -nn T-n ϋ < 1- I t 0¾--3 ^ {Please read the precautions on the back before filling in each page) Μ · " 部 智 " Printed by AA Employee Consumption Cooperative, A8 4371 03? S8 ____ D8____ VI. Patent application scope (active layer 7) Secondly, grow a barrier layer of 250 angstroms thick and made of undoped GaN. Then set the temperature to 800 ° C and use TMG 'T Ml and ammonia gas, according to which a thickness of 30 Angstroms and an undoped InQ.3Ga〇;? N formed well layer =, and then the barrier + 丼 + barrier + well + barrier In this order, 7 barrier layers and 6 well layers are stacked on top of each other to grow an active layer 7 composed of a multiple quantum well structure with a thickness of 1,930 angstroms. According to the obtained LED device, when it is 20 mA forward, it displays pure cyan light of 470 nm and has the same effect as that shown in Example 34. [Example 3 6] Compared with Example 34, this The LED element manufactured in the example is changed in the active layer 7 as described below, and the others are the same. (Active layer 7) Next, 'grow a barrier layer with a thickness of 25 Angstroms' formed of undoped GaN, and then set the temperature to 800 ° C, using TMg, TMI, and ammonia According to this, a well layer formed by undoped InuGauN with a thickness of 30 angstroms is grown. After that, 6 barrier layers and 5 well layers were stacked on each other in the order of barrier wall + 丼 + barrier wall + well + ... · + barrier wall, thereby growing a multiple quantum well with a film thickness of 1650 angstroms. The active layer 7 is formed. Page 137 Applicable to the standard rate of the Song Dynasty ((210X 297 ^^ 7 一 ~ -------------- 4371 as

〇 BS C8 '--- ~ __ D8 Six' Patent Application Scope The LED element thus obtained exhibits a pure cyan light of nm at a forward voltage of 20 mA and has the same effect as that shown in Example 34. [Example 3 7] Compared with Example 3 4 ', the LED element manufactured in this example was changed in the active layer 7 as described below, and the others were the same. (Active layer 7) Next, a barrier layer of 250 angstroms thick and made of undoped GaN was grown, and the temperature was set to 800 ° C, and TMG, Τί, and ammonia gas were used. Based on this, a well layer with a thickness of 30 angstroms and formed by undoped InmGa 0.65N is grown. After that, 7 barrier walls and 6 well layers were stacked in the order of barrier wall + well 10 barrier wall τ well + ... + barrier wall, thereby growing a multiple quantum well structure with a film thickness of 1 930 angstroms. Constituted active layer 7. The LED element thus obtained exhibited a tone-green light of 500 nm at a forward voltage of 20 mA, and had the same effect as that shown in Example 34. [Embodiment 3 8] Compared with Embodiment 34, the LED element manufactured in this embodiment changes the active layer 7 as described below, and the others are the same. Page 138 --------_ Shang ------- Order ------- Ball (Please read the notes on the back before filling in the support page),-> 1 · ^ .., „------------- — 3ο

ABCD Economics and Wisdom in the Field of Wisdom; «Printed by Bone Cooperatives 6. Patent Application Park (Active Layer 7) Secondly, a thickness of 250 Angstroms' is grown. 'Barrier layer formed by GaN with unsupported impurities' followed by The temperature was set to 800 ° C, and TMG, TMI, and ammonia gas were used to grow a well layer formed of undoped In0.35GaQ.65N with a thickness of 30 angstroms. After that, in the order of the barriers ten barriers + barriers + wells +... + Barriers, 4 barrier layers and 3 well layers were stacked on each other, and a multiple quantum with a film thickness of 1090 angstroms was grown. Active structure 7 composed of well structure. The LED element thus obtained exhibited a tone-green light of 50 nm at a forward voltage of 20 mA, and had the same effect as that shown in Example 34. [Embodiment 39] Compared to Embodiment 34, [the ED element produced in this embodiment has not grown the η-side second multilayer film 3 306, and the other is the same c ^ The LED element obtained accordingly The device characteristics and light-emitting output are slightly lower than those shown in Example 34, but the electrostatic resistance is about as good as that in Example ^. [Example 4] Compared with Example 34, the LED element manufactured in this example changed the p-side multilayer film cover layer 108 as described below, and the others were the same. Page 139 Applicable scales of this line (please read the first; i) and then fill out this page}-binding and ordering. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs f ^ 371 03 A / ----- ----_ B7______ 5. Description of the invention () (P side single-film cover layer 18) Under the temperature of 1050 degrees C, using TMG, TMA, ammonia, ^ and CpzMg, a thickness of 300 is grown A p-side single-nozzle cover layer 18 formed of p-type aio [6oa {) 84n doped with Mg impurity concentration of 1 × 10 2 / cm3. Although the cover layer formed in the LED element obtained in this embodiment is not a superlattice but a single layer, its combination with other layers is slightly worse than those shown in Examples 2 and 7. 'But it can also achieve roughly the same effect. In addition, compared to multiple layers, the manufacturing process for a single layer is simpler. [Example 4 1] Compared to Example 34, the LED element manufactured in this example changed the thickness of each of the n-th i-th multilayer film cover layers 305 in the following manner, and the others were the same. (η-side multilayer film 305) It is believed that the supply of silane gas is stopped, and the temperature is also set to 0,500 ° C. TMG and gas are used to grow out of it—thickness of 3,000 angstroms, from an undoped material The lower layer 305a formed by GaN, and then, at the same temperature, an additional supply of wheat gas was grown to grow-a thickness of 300 angstroms and an intermediate layer 3005b formed of GaN with a Si concentration of UxlWcm3. Then, only the supply of silane gas was stopped, and at the same temperature, an upper layer 305 having a thickness of 50 angstroms and formed of undoped GaN was grown. Based on this, a total film thickness of 3350 angstroms was formed. , 丨 3 layers on the n side

Article 140T-Install ------- Order ------ Please read the notes on the back before filling this page) Member of the Intellectual Property Bureau of the Ministry of Economic Affairs 印 Consumer Cooperative Press ¾ 4371〇3 A7 ________B7 _--. V. Invention Description () Multi-layer film 305. The LED element thus obtained had substantially the same characteristics as those of Example 34, and it had a good effect. [Embodiment 42] Compared with Embodiment 41, the LED element manufactured in this embodiment changes the n-th i-th multilayer film cover layer 305 as follows, and the other parts are the same as those in Embodiment 41. (η-side multilayer film layer 305) That is, the lower layer 305a is a layer with a thickness of 3000 angstroms and is formed of undoped AluGauN, and the intermediate layer 305b is a layer with a thickness of 300 angstroms and is There is 1GaO9n with a Si concentration of 4 5χ 10u / cm3. In addition, the upper layer 305c is formed by an undoped AlO.i Gao. With a thickness of 50 angstroms. The LED element system thus obtained has approximately the same characteristics as in Example 41, and it has a good effect. [Comparative Example 1] Compared to Example 34, the LED element system produced in this comparative example is not useful. The lower layer 305a made of undoped GaN which constitutes the first multilayer film cover layer 305 on the η side is the same as the others. Compared with Example 34, the obtained LED element has a significantly lower electrostatic withstand voltage, and the characteristics of the leakage current and Vf also show unsatisfactory values. Page 141 ^ 一 -------- -I ---- ---- II. II i ί II Order-_ιι! Ιλ 'I (锖 Please read the precautions on the back before filling this page) 4371 03 A7 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economics R7. 5. Description of the invention () [Comparative Example 2] Compared to Example 34, the LED elements made in this comparative example are not formed to form the n-side first The intermediate layer 3005b of the multilayer die cover layer 305 formed of Si-doped GaN is otherwise the same. Compared with Example 34, the LED element obtained in this way had a significantly lower light-emitting output and electrostatic withstand voltage, and other characteristics also showed values that could not be fully satisfied. [Comparative Example 3] Compared to Example 34, the LED element fabricated in this comparative example did not form an upper layer made of undoped GaN to constitute the n-th i-th multilayer film cover layer 3005. 305c 'Others are the same. Compared with Example 34, the LED element obtained according to this has an increased leakage current and other characteristics have values that cannot be fully satisfied. [Embodiment 43] Embodiment 43 is an embodiment related to Embodiment 6. (Substrate 1) First, a substrate 1 formed of blue quartz (c-plane) is placed in a MOVPE reaction vessel, and hydrogen gas is passed through, and the temperature of the substrate is raised to 105 ° C. Clean the substrate. _____ Page 142 is not paper 丨: (Please read the precautions on the back before filling this page) -------- Order --------71 0 3 a: _____ _B7__ V. Description of the invention ( ) (Buffer layer 2) Then 'lower the temperature to 510 ° C' and use a hydrogen-added carrier gas, ammonia-added source gas, and TMG (trimethylgallium) to grow a film thickness of 200 on the substrate The buffer layer 2 made of GaN may be omitted depending on the type of substrate and the growth method. (Undoped GaN layer 3) After growing the buffer layer 2 ', only the supply of TMG is stopped, and the temperature is returned to 105 ° C. When the temperature reaches 1050 ° C, the raw material gas added with TMG and ammonia gas are also used to grow an undoped GaN layer formed of undoped GaN and having a film thickness of lgm. 3 (η-side contact layer 4) Secondly, maintain the temperature at 1050 ° C, and also use TMG as raw material gas, ammonia gas, and impurity gas with silicon oyster gas to grow to a film thickness of 3 / zm An n-side contact layer formed of GaN having a Si concentration of 3 × 10 19 / cm 3. (Un-doped GaN layer 5) Next, the supply of silane gas is stopped, and the temperature is also set to 1050 degrees C 'to grow an undoped GaN layer with a thickness of 100 angstroms. Page 143 (Please read the precautions on the back before filling out this page)-Install a 5, · 111111. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 〇3 A7 B7 V. Description of the invention () (η-plastic multilayer film Layer 6) Next, 'set the temperature to 800 ° C, and use TMG, TIM' and ammonia gas to grow a layer of 25 angstroms thick, formed of undoped In0.〇3Ga〇.97N 2 nitride semiconductor film, then, the temperature is increased, and a first nitride semiconductor film formed of undoped GaN with a thickness of 25 angstroms is grown thereon; In the 2nd + 1st order, 10 layers are stacked on each other to form an n-type multilayer film having a superlattice structure with a film thickness of 500 angstroms. (Active layer 7) Next, a 200 angstrom barrier layer formed of undoped GaN is grown. Then, the temperature is set to 800 ° C, and TMG, TMI, and ammonia are used. A well layer with a thickness of 30 angstroms and formed by undoped In0,4Ga0.6N was grown. Then, in the order of barrier wall + well + barrier wall + well + · ... + barrier wall, 5 layers of barrier layers and 4 layers of well layers were stacked on each other to grow a multiple quantum with a film thickness of 1120 angstroms. Active structure 7 composed of well structure. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ Installation -------- 1T_ < Please read the precautions on the back before filling this page) (Type P Multi-layer film layer 8) Secondly, using TMG, TMA, ammonia, and Cp2Mg, a thickness of 40 angstroms was formed, and the P-type AlO.iGa 0.9.9N doped with Mg impurity concentration 5x10i9 / cm3 Then, the third nitride semiconductor film was stopped using TMA and CpaMg, and a fourth nitride semiconductor film formed of undoped GaN was grown to a thickness of 25 angstroms. After that, _______. People's Republic of China Family Standard (C'NS) A1 Ui (jx297 public) ™ ~ Printed by the Consumer Cooperation of Employees and Intellectual Property Bureau ^ 437103 Λ7 _____ Β7 V. Description of Invention () Repeatedly operate and form each other in the order of 3 + 4-having 4 layers each to form a P-type multilayer film 8 with a superlattice structure and a film thickness of 200 angstroms. (P-side contact layer 9) Next, the temperature was set to 1050 ° C, and TMG, ammonia, and Cp2Mg were used to grow a thickness of 700 angstroms and an impurity concentration of ix 1 020 / cm3. A p-side contact layer 9 formed of P-type GaN. After completion of the reaction, 'the temperature is lowered to room temperature' and the wafer is placed in a reaction container in a nitrogen atmosphere ', and the process is cleaned at 700 ° C, thereby reducing the resistance of the P 螌 layer. After the cleaning process is completed, the wafer is taken out from the reaction container 10, and a mask pattern of a predetermined shape is formed on the surface of the uppermost P-side contact layer 9, and then in a RIE (reactive ion etching) device. The P-side contact layer is etched to further expose β on the surface of the n-side contact layer 4 shown in FIG. 1. After the etching, a thickness of 200 angstroms, including A light-transmitting P electrode 10 of Ni and Au; and a p-pad electrode 1 1 formed of Au for welding and having a thickness of Au formed on the p-electrode 10 ^ In addition, the η-side contact layer 4 exposed by etching An n-electrode 12 containing w and A1 is formed on the surface of the surface to form an LED element. At a forward voltage of 20mA, the LED element displays pure green light at 52nm and its Vf is only 35V, compared to the conventional multiple quantum well structure. Page 145 K.JV. — — — — — —- -丨 I. ----- J — Order ·-丨 II I-% (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4371 03 A7 _ B7__ V. Description of the invention The LED element of () has a vf reduction of 0.5 V and an output increase of more than 2 times. Therefore, as long as I 0 mA, almost the same characteristics as those of the conventional LED element can be obtained. In addition, the electrostatic withstand voltage of the element obtained based on the conventional LED element 'is about 1.2 times or more than that of the conventional LED element. In addition, as far as the structure of the conventional LED element is concerned, it can also sequentially form a first buffer layer made of GaN, a second buffer layer made of undoped GaN, and a An n-side contact layer formed of GaN of Si, an active layer formed of the same multiple quantum well structure as in Example 12, a single AlO. | Ga〇.9N layer doped with Mg, and a doped layer P-side contact layer formed of GaN and Mg. [Example 44] Compared with Example 43, when the LED element made in this example was grown with an η-type multilayer film 6, only the first nitride semiconductor film was made of Si with a concentration of lxl. 1 s / cm3 is formed of GaN, and the other parts are the same as those of Example 43. The LED element thus obtained has approximately the same excellent device characteristics as those of Example 43. [Example 45] Compared with Example 43, when the LED element made in this example was grown with the η-side multilayer film layer 6, the second semiconductor semiconductor film was doped with h at a concentration of 110 l * / cm3 of In〇03Ga〇 ": The first nitride semiconductor film is formed by doping Si with a concentration of 5x10u / cm3, except that it is the same as Example 43. According to this The obtained coffee _ No. U6 肓 this paper 诋 standard is applicable --------- Hi -------- order ---------- broken (please read the note on the back first Please fill in this page again) 4371 ϋ3 Λ7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () The component is under 20mA, and its vf is 3.4V. Compared with the conventional LED components, the output is Increase i by 5 times or more. In addition, the electrostatic withstand voltage is the same as that of Example 43. [Example 46] Compared with Example 43, the LED element made in this example has a multi-layered p-layer 8 on the p-side. The "Ti" system is the same as that of Example 43 except that a fourth nitride semiconductor layer doped with Mg of Hanx lx1019 / cm3 and formed of a p-type GaN layer is used. An LED element having substantially the same characteristics as in Example 43 was obtained. [Example 47] Compared with Example 43, the LED element made in this example was grown when the P-side multilayer film layer 8 was grown and the third atmosphere was formed. The compound semiconductor film is a film with a thickness of 25 angstroms and formed of undoped A " sGa " 5N, and the fourth nitride semiconductor film is a film with a thickness of 25 angstroms and is made of undoped An impurity GaN layer is formed at the same time, and each of the two layers is stacked on top of each other-a layer with a total film thickness A of 100 angstroms, other than that is the same. Based on this, it can be obtained substantially the same as Example 43 Characteristics of the LED element. [Example 4 8] Compared to Example 43, the LED element made in this example is to change the undoped GaN layer 5 into a multi-layer film layer, and the following layers are described as follows The method is changed, and the others are the same as those in Embodiment 43. _______ U7 肓 paper technique Λ:] / 丨 丨 屮. .1, -ff ~~ ({\ Γ〇 \ " '| Τ ^ ,,- ------------ ----- —II ----- 11 III ----- IIII {Please read the notes on the back before filling this page) 4371 ϋ 〇Α7 Β7 V. Description of the invention () (η-side contact layer 4) Next, the temperature was maintained at Ϊ 050 ° C, and a source gas with TMG, ammonia gas, and an impurity gas with silane gas were also used to grow into a film thickness of 2.25 μπ1. A side contact layer formed of GaN doped with a Si concentration of 6 × 10u / cm3. (Multi-layer film layer) Secondly, stop supplying silane gas, and set the temperature to 1050 ° C. Using TMG and ammonia gas, a GaN layer with a thickness of 2000 angstroms and unconnected impurities is grown. The formed lower layer 305a is then additionally supplied with silane gas at the same temperature to grow an intermediate layer 3 having a thickness of 300 angstroms and doped with GaN having a Si concentration of 6 × 1018 / cm ·· 〇5b, and then 'only stop the supply of silane gas, and at the same temperature, grow an upper layer 305c with an undoped GaN thickness of 50 angstroms. Based on this, a multilayer film layer (n-type multilayer film layer 6) consisting of 3 layers with a total film thickness of 2350 angstroms was formed. Next, at the same temperature, a film thickness of 40 angstroms was grown. The first nitride semiconductor film formed of GaN without impurities: After that, the temperature is set to 800 ° C, and TMG, TMI, and ammonia gas are used to grow a thickness of 20 angstroms from the undoped The second nitride semiconductor film formed by indium 0.02 Ga 0.098 N. After that, the operation is repeated, and the first and second layers are stacked on each other in the order of 1 + 2, and finally a first nitride semiconductor film 1 made of undoped GaN is formed with a film thickness of Angstroms --- ----- ~ U8 page system 丨 ta 1¾ tm- Tcks) Aum (210 χ — --- One (Please read the precautions on the back before filling this page) -1 -------- 'I ------- Consumption cooperation of employees of the Intellectual Property Bureau of the Ministry of Hydrogenation 钍 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A37 ^ 03 A7 ______ V. Description of the invention () An n-type multilayer film 6 having a total film thickness of 64 Å is grown. (P-type multilayer film 8) Next, set the temperature to 1 050 ° C and use TMG, TMA, ammonia, and Cp2Mg. A third nitride semiconductor film is grown to a thickness of 40 angstroms and formed of p-type Al0.2Ga.sN doped with Mg impurity concentration 5xl019 / cm3. Next, the temperature is set to 800 ° C and used. Based on TMG, TMI, ammonia, and Cp2Mg ', a fourth nitride formed with a thickness of 25 angstroms and formed from a p-type Al.〇2Ga〇.〇98N doped with Mg impurity Han 5x1019 / cm3. Semiconductor film After that, the operation is repeated and stacked in the order of 3 + 4 to form a third gaseous semiconductor having 5 layers each, and finally growing to a thickness of 40 angstroms and formed of undoped GaN. The superlattice structure of the film 'is used to form a p-type multilayer film cover layer with a total film thickness of Angstrom. The LED element obtained based thereon is approximately the same as the light output and Vf of Example 43, and it is' if When the electrodes on the p-layer and the p-layer were slowly applied with voltage in the opposite direction to measure the electrostatic withstand voltage of the LED element obtained above, the result was more than conventional. At the same time, the electrostatic pressure-resistance ratio was 43 Although in the above-mentioned embodiment, "the semiconductor semiconductor light-emitting element using LED elements is described, the present invention is not limited to LED elements." It is applicable to other light-emitting elements such as laser diode elements. Moreover, the present invention is not limited to the light-emitting element, it can also be ------------- ^ -------- order --------- Line I (Please read the note on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 4371 03 A7 __B7_ V Explanation of the invention () Applicable to light-receiving elements such as solar cells and light sensors composed of nitride semiconductors, or electronic components such as transistors and high-power elements. In summary, for nitride semiconductor elements In particular, for a nitride semiconductor light-emitting element, the present invention can obtain the same or more output as a conventional LED element at a lower current, and at the same time, the light-emitting output can be improved. In addition, as can be seen from the above, the present invention can provide a nitride semiconductor device which can improve the electrostatic withstand voltage and at the same time improve the reliability, and can expand the range of applicable products. In addition, the present invention is not limited to a light-emitting device, and can be applied to all electronic devices formed using a nitride semiconductor. Article 150 贳 -------------------- Order --------- Line-(Please read the precautions on the back before filling this page)

Claims (1)

4371 03 Patent Application No. 88103785; Chinese Patent Application Scope Amendment Chinese Patent Application Facts Amended in F. The patent application scope is supplemented by the Intellectual Property Office of the Ministry of Economic Affairs, and printed by a consumer cooperative. 1. A nitride semiconductor device with an active layer, of which The sexual layer is between an n-side region containing a plurality of nitride semiconductor layers and a p-side region containing a plurality of nitride semiconductor layers. It is characterized in that: at least one argon compound is present in the n-side region The semiconductor layer system is an η-side multilayer film layer, and the η-side multilayer film layer is composed of a first gaseous semiconductor film containing 1η, and a second nitride semiconductor film having a composition different from that of the first semiconductor compound. The thickness of at least one of the first nitride semiconductor film and the second nitride semiconductor film is 100 angstroms or less. 2. The nitride semiconductor device according to item 1 of the scope of the patent application, wherein the first nitride semiconductor film is composed of InxGa! .XN (0 &lt; x &lt;l); and the second nitride semiconductor film It consists of InyGauNCOSycl, y &lt; x). 3. As for the nitride semiconductor device described in item 1 or 2 of the scope of the patent application, at least one of the above-mentioned first nitride semiconductor film or second nitride semiconductor film has a film thickness that is different from that of the adjacent one. Film thickness of the first gaseous semiconductor film or the second argon semiconductor film ° 4. The nitride semiconductor element described in the item 丨 or 2 of the scope of the patent application, wherein the first gaseous semiconductor film or the second gaseous semiconductor film described above At least one of the gaseous semiconductor film has a group III element composition that is different from that of the nearest .4 -ti 'real name · I have no application first ~ -C reading back &amp; it is true] 1 U of caution Line No. 151T This paper standard is applicable to Chinese National Standard (CNS) A4 specifications (2) 0X 297 Gonghui ---- d37l03 VI. Patent application scope 1 Same as nitride semiconductor film or second nitride semiconductor film _ III element composition. 5. The nitride semiconductor device according to item 1 of the scope of patent application, wherein the η-side multilayer film layer is adjacent to the active layer. 6. The nitrogen according to item 1 of the scope of patent application. Compound semiconductor element, in which The first nitride semiconductor film and the second nitride semiconductor film are undoped * 7. The nitride semiconductor device according to item 1 of the patent application scope, wherein the t-th nitride semiconductor film or the second nitride Either of the semiconductor films is doped with n-type impurities. 8. The nitride semiconductor device according to item I of the patent application scope, wherein both the first nitride semiconductor film and the second nitride semiconductor film are doped. η-type impurity Printed by Consumer Property Cooperative, Member of Intellectual Property Bureau, Ministry of Economic Affairs A8 BS C8 D8 (Please read the precautions on the back before filling out this page) 9. The nitride semiconductor device described in item 1 of the patent application scope, where 'a nitride semiconductor layer in the ρ side region Is a ρ-side multilayer film layer, and the ρ-side multilayer film layer is stacked by a third nitride semiconductor film containing A1 and a fourth nitride semiconductor film having a composition different from that of the third nitride semiconductor film. The thickness of at least one of the third nitride semiconductor film and the fourth nitride semiconductor film is 100 on page 152. This paper is in accordance with China National Standard (CNS) A4 (210 X 297) ) 4371 0 3 8888 ABCD 4ν \ ”/ V * · ηπ f Μ ¾ 6. The scope of patent application is less than Angstrom. &Lt; Please read the precautions on the back before filling in this page) 1 0.If the scope of patent application is item 9 In the nitride semiconductor device, the third nitride semiconductor film is composed of AUGahNftXaSl); and the fourth nitride semiconductor film is composed of InbGai.bN (0 &lt; b &lt; l, b &lt; a) 1 1 The nitride half as described in item 9 of the scope of patent application The bulk element 1 has a thickness of at least one of the third nitride semiconductor film or the fourth nitride semiconductor film different from that of the third nitride semiconductor film or the fourth nitride semiconductor film in close proximity. 1 2 The nitride semiconductor device according to item 9 of the scope of the patent application, wherein at least one of the third gaseous semiconductor film or the fourth gaseous semiconductor film has a group III element composition different from that of the adjacent third nitride. The semiconductor film or the 4th nitride semiconductor film is composed of the same in group elements. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 3. The nitride semiconductor element as described in item 9 of the scope of patent application, where 'the ρ side is multilayered The layer is adjacent to the active layer. 1 4 _ The nitride semiconductor device according to item 9 of the scope of patent application, wherein the third nitride semiconductor film and the fourth nitride semiconductor film are undoped. 153纸张 This paper size is applicable to China National Standard (CNS) A4 specifications (210 χ 297 public love) A8 B8 C8 D8 437103 Patent application scope (please read the precautions on the back before filling this page) 1 5. The nitride semiconductor device according to item 9 of the scope of the patent application, wherein either the third nitride semiconductor film or the fourth nitride semiconductor film is doped with a p-type impurity "1 6. If a patent is applied The nitride semiconductor device according to item 9, wherein the third nitride semiconductor film and the fourth nitride semiconductor film are doped with a p-type impurity. 1 7. A nitride semiconductor device having An active layer, which is between an η 一 region containing a plurality of nitride semiconductor layers and a p-side region containing a plurality of nitride-rich conductor layers, and is characterized by: employees of the Intellectual Property Bureau of the Ministry of Economic Affairs At least one nitride semiconductor layer in the η-side region printed by the consumer cooperative is the η-side first multi-layer film layer, and the η-side first multi-layer film layer is formed by at least doping η-type impurities with different concentrations, and each Two nitride semiconductor films with different bond gap energies are stacked, one is doped with n-type impurities and the other is not doped, and two nitride semiconductor films with different bond gap energies are stacked. At least one nitride semiconductor layer in the ρ-side region is a ρ-side multilayer film cover layer, and the P-side multilayer film cover layer is doped with at least one of the p-type impurities of different concentrations and each has a different bond gap energy. The third and fourth nitride semiconductor films are stacked; and the active layer is formed by InaGa 1 _aN (0Sa &lt; 1) and contains page 154. The paper standard is applicable to Chinese National Standard (CNS) A4. Specifications (210x 297 mm) 4371 03 A8B8C8D8 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 6. The scope of patent applications for multiple quantum well structures or military-quantum well structures. 1 8. —A kind of nitride semi-conductor element 'which has an active layer, where the active layer is Between an n-side region containing a plurality of nitride semiconductor layers and a p-side region containing a plurality of nitride semiconductor layers, characterized in that at least one nitride semiconductor layer in the n-side region is η 恻A first multilayer film layer, and the n-side first multilayer film layer is formed by adding at least two kinds of nitride semiconductor films of the same composition with different concentrations of n honey impurities, and one side is doped with n-type impurities The other side is not doped and is formed by stacking two kinds of nitride semiconductor films with the same composition: at least one nitride-rich conductor layer in the ρ-side region is a ρ-side multilayer film cover layer, and the P The side multilayer film cover layer is formed by stacking at least one of the third and fourth nitride semiconductor films doped with different concentrations of P-type impurities and each having a different bond gap energy; The system consists of a single InaGa ^ NCOSacI), which contains multiple quantum pseudo structures or single-quantity pre-well structures. 1 9 · The nitride semiconductor device according to item 17 or item 18 of the scope of the patent application, wherein the third nitride semiconductor film and the fourth nitride semiconductor film are respectively doped with ρ of different concentrations. Type impurities. 20. The nitride semiconductor device according to item 17 or item 18 in the scope of patent application, wherein the third nitride semiconductor film and the fourth nitride semiconductor are _ No. 1551___ -______ This paper size is applicable to China Standard (CNS) A4 specification (210 X 297 mm) &lt; Please read the precautions on the back before filling out this page) II --I-.1 IIII &lt; — — — — — — — — I »fflIlllllllllllllllljlllli V. .4371 03 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 6. Patent application. The body film is doped with P-type impurities a 21, a kind of nitride semiconductor element, which has an active layer. The active layer is between a ^ -side region containing a plurality of nitride semiconductor layers and a p-side region containing a plurality of nitride semiconductor layers, and is characterized in that: "There is at least one gas in the η-side region. The compound semiconductor layer is "then the first multilayer film layer, and the η side is the first!" Multi-layer film is a type of indifferent ... and has the same composition;: = semiconductor film is deposited, one side is doped with n-type impurities and the other is not doped, and is composed of two kinds of gaseous compounds with the same composition Ning body film is piled up;. . In the &quot;,! Area, at least one gaseous semiconductor semiconducting layer is ρ 恻 early a film cover layer, and the P-side single film cover layer is formed by at least one AlbGawNtOsbsi) which has P-type impurities; The active layer is a multiple quantum pseudo structure or a single quantum pseudo structure formed by InaGasa_a &lt; i). 22 · As for the gaseous semiconductor device ′ in item 18 of the scope of patent application or member 21J, among which ′ is on the η side! The multilayer film is formed by stacking two kinds of gaseous semiconductor films formed of GaN doped with different concentrations of η-type impurities, respectively. 23.-A kind of nitride semiconductor element 'It has an active layer, in which the paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 Meals _ Live Page 156 II I--I — — — — —-~. | 1 _-- I ---------- I (Please read the precautions on the back before filling this page) 4371 03 A8B8C8D8 ll: ·-”. Bu—f 'j Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economy, the scope of patent application is between one and plural Between the η-side region of each nitride semiconductor layer and a ρ-side region containing a plurality of nitride semiconductor layers, it is characterized in that at least one nitride semiconductor layer in the η-side region is a η-side first multilayer film layer And the η-side first multilayer film layer is formed by stacking at least two kinds of nitride semiconductor films doped with different concentrations of n-type impurities and having different bond gap energies, and one side is doped with n-type impurities. The other side is not doped and consists of two nitrides with different bond gap energies Semiconductor film is deposited; at least one nitride semiconductor layer in the p-side region is a p-side single film cover layer, and the p-side single film cover layer is made of at least one AIbGa 丨 .bNtOSbSl containing a P-type impurity) The active layer is a multi-quantum well structure or a single quantum well structure formed by I na G ai-an N (0 S &lt; 1). The nitride semiconductor device according to the item, wherein an η-side second multilayer film layer is further provided between the η-side first multilayer film layer and the active layer, wherein the η-side second multilayer film layer is composed of The first nitride semiconductor film 'and a second nitride semiconductor film having a composition different from that of the first nitride semiconductor film are deposited. 2 5. The nitride semiconductor device according to item I 7 of the scope of patent application * Among them, an η-side contact layer containing η-type impurities is provided between the η 恻 I multi-layer film layer and the substrate side. Page 157 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ) (Please read the notes on the back before filling this page) -. 11 --- Order * -------- Line — A8B8C8D8 4371〇6. Patent application scope 26. The nitride semiconductor device according to item 25 of the patent application scope, wherein the n-side contact layer is formed on an undoped GaN layer. 2 7. The nitride semiconductor device according to item 26 of the patent scope, wherein the undoped GaN layer is formed on a buffer layer formed of GadAlhdNCOcdsi) grown at a low temperature, and A p-side GaN contact layer containing a P-type impurity of Mg is further formed on the p-layer multilayer film covering layer or the p-side single covering layer. 2 8. A nitride semiconductor device having an active layer 'wherein the active layer is interposed between an n-side region composed of a plurality of nitride semiconductor layers' and a p-type contact layer having a plurality of Between the P-side regions of the nitride half-lift layer, the P-type contact layer has a superlattice structure formed by sequentially stacking first and second nitride semiconductor films with different compositions. In addition, at least one of the nitride nitride semiconductor films includes In. 21 A nitride semiconductor device as described in claim 28 of the patent scope, wherein a composition is formed between the first nitride semiconductor film and the second nitride semiconductor film. The composition of semiconductor film ----- ------- --- Γ ----- order ------- ί line {Please read the note on the back first? Please fill in this page again for details.) Bureau of Intellectual Property, Ministry of Economic Affairs, Intellectual Property, Bureau A continuously changed to the composition gradient layer of the composition of the second nitride-rich conductor film. -— _ ____-.... ^ This paper size applies the national standard (CNSM4 specification (210 X 297 public love) — 4371 〇3 -------- VI. Patent application scope J〇. The nitride semiconductor device according to item 28 or item 29 of the scope of the patent application, wherein the first nitride semiconductor film and the second nitride semiconductor film each contain In, and ln in the first vapor semiconductor film The content is greater than the content of [η] in the second nitride semiconductor film. 3 1. The nitride semiconductor device according to item 28 or 29 of the scope of patent application, wherein the first nitride semiconductor film is composed of InxGa ^ xN; and the second nitride semiconductor film is composed of AiyGai.yN (OSy &lt; l). 2-A nitride semiconductor device as described in item 28 of the scope of the patent application, wherein 'the first One of the nitride semiconductor film and the second nitride semiconductor film is doped with a p-type impurity, and the other is not doped with a p-type impuritya Printed on a private day by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 f Please read the notes on the back of the like before filling in this page &gt; 3 j. If you apply The nitride semiconductor device according to Item 28, wherein one of the first nitride semiconductor film and the second nitride semiconductor film has a concentration of 1 X 1 〇19 / cm3 to 5X〗 021 / p example impurities between cm3: while the other side is doped at a concentration of ί X 1 〇U / c m3 ~ 5 χ 丨 〇1 9 / (^ 3 'and its doping amount is higher than the former nitride semiconductor The film contains less type impurities. 34. The nitride semiconductor device as described in item 28 of the scope of application for patent, wherein 'the first nitride semiconductor film is formed on the outermost surface and is formed on 笫 t59T. This paper is applicable to this paper. _China National Standard (CNS) A4 Specification (210 X 297 mm) 4371 03 AS B8 C8 D8 6. Scope of patent application The first surface of the first nitride semiconductor film is adjacent to a p-side electrode. (Please read the precautions on the back before filling this page) 3 5. The nitride semiconductor device described in item 34 of the scope of patent application, wherein the concentration of P-type impurities in the first nitride semiconductor film is greater than the above-mentioned 2 Nitride semiconductor film "3 6 · The nitride semiconductor device according to item 28 of the patent application scope, wherein between the active layer and the p-type contact layer is a nitride semiconductor "P-type cover layer formed" 37. The nitride semiconductor device as described in item 36 of the scope of patent application, wherein the "P-type cover layer has a layer composed of AlxGahXN (0 &lt; xSl)" and an A superlattice structure in which layers composed of InyGai_yN (0 &lt; ySl) are alternately stacked. 3 8. —A kind of gaseous semiconductor device 'has an active layer, wherein the active layer is between an n-side region containing a plurality of nitride semiconductor layers and a p-side region containing a plurality of nitride semiconductor layers. In the meantime, a member of the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed: At least one nitride semiconductor layer in the η 恻 region is the η-side first multi-layer film layer, and the η 恻 -th multi-layer film layer is based on A lower layer formed of an undoped nitride semiconductor film, an intermediate layer formed of a nitride semiconductor film doped with an n-type impurity, and an upper layer formed of an undoped nitride semiconductor film Wait for at least 3 layers to pile up in sequence |-_____ No. 160Ί &quot; This paper size is standard (CNS) A4 specification (21〇x tear public love) 437103 A8 B8 C8 D8 &gt;: The scope of patent application is completed, <Please first Read the notes on the back and fill in this page) At least one nitride semiconductor layer in the P 恻 region is the P side. The multilayer film cover layer, and the P side multilayer film cover layer is doped by P-types with different concentrations. Impurities, And the third and fourth nitride semiconductor films each having a different bond gap energy are stacked: Also, the active layer is a multiple quantum rhenium structure formed by InaGa I -aN (0Sa &lt; 1) or a single Quantum Well Structure "39. The nitride semiconductor device according to item 38 of the scope of application for a patent, wherein the p-type impurity concentration in the third nitride semiconductor film is different from the p-type impurity in the fourth nitride semiconductor film. concentration. 40. The nitride semiconductor device according to item 38 of the scope of patent application, wherein the p-type impurity concentration in the third nitride semiconductor film is the same as the p-type impurity concentration in the fourth nitride semiconductor film = economical Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives 4 1. A nitride semiconductor device having an active layer, wherein the active layer is located between an n-side region containing a plurality of nitride semiconductor layers and a layer containing a plurality of nitrogen The P-side region of the compound semiconductor layer is characterized in that at least one nitride semiconductor layer in the η-side region is an η-side first multilayer film layer, and the η-side first multilayer film layer is The lower layer formed by a doped nitride semiconductor film, an intermediate layer formed by a nitride semiconductor film doped with an n-type impurity, and an undoped page 161. This paper applies Chinese national standards ( CNS) A4 specification (21CU 297 mm) 4371 03 VI. Patent application scope A8 B8 C8 D8% At least 3 layers including the upper layer formed by the printed semiconductor semiconductor film produced by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Sequentially stacked: at least one nitride semiconductor in the p-side region is considered to be a p-side single film cover layer, and the p-side single film cover layer is formed of AUGabN (OSbSl) containing p-type impurities: In addition, the active layer is a multiple quantum erbium structure formed by InaGa [.aN (0Sa &lt; 1). 42. The nitride semiconductor device according to item 38 or item 39 of the scope of the patent application, wherein the first multilayer film layer on the η side is a film thickness of 100 to 10,000 angstroms and is undoped A lower layer formed by a high-quality nitride semiconductor mold, a film thickness of 50 to 100 Angstroms, and an intermediate layer formed of a nitride semiconductor film doped with ^ -type impurities, and a film thickness of 25 to 100 Angstrom, and is composed of an undoped nitride semiconductor film. 43_ The nitride semiconductor device according to item 38 of the scope of patent application, wherein the n-side first multilayer film layer and the active layer An inter-layer second multilayer film layer is further provided between the layers. The n-layer second multilayer film layer is composed of a first nitride semiconductor film containing ^ and a first nitride semiconductor film having a composition different from that of the first nitride semiconductor film. 2Nitride semiconductor film is deposited. 44. The nitride semiconductor device according to item 38 of the patent application park, wherein 'the η side first multilayer film layer is provided between the substrate and the substrate—including η type ______ 162 ear paper ruler Use the Lai Family Standard (CNS: &gt; A4 Specification ⑵〇χ 297 公 爱-{^. —.-------------- (Please read the precautions on the back before filling this page ) 71 03 Α8 Β8 C8 D8 6. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Scope of patent application η side contact layer of impurities. 4 5. The nitride semiconductor device according to item 44 of the scope of patent application, wherein the η 恻 contact layer is formed on an undoped GaN layer. 46. The nitride semiconductor device according to item 45 of the scope of patent application, wherein the undoped GaN layer is formed on a buffer layer formed of GadAh.dNfCKdSl) grown at a low temperature, and the p A P-side GaN contact layer containing a P-type impurity of Mg is formed on the side multilayer film cover layer or the p-side single layer. 47. A nitride semiconductor device having an active layer, wherein the active layer is between an n-side region containing a plurality of nitride semiconductor layers and a p-side region containing a plurality of nitride semiconductor layers , Characterized in that: at least one nitride semiconductor layer in the n-side region is an n-type multilayer film layer formed by stacking a plurality of nitride semiconductor films; and at least one nitride semiconductor layer in the p-side region It is a p-type multilayer film layer formed by stacking a plurality of nitride semiconductor films: and the composition system of the n-type multilayer film layer is different from the composition of the P-type multilayer film layer. 4 8. —A nitride semiconductor device having an active layer, wherein the active layer is located in an n-side region containing a plurality of nitride semiconductor layers. Page 163 Applicable to paper standards + National Standards (CNS) A4 specification (210 χ 297 mm) ------------- II ^ --------- Order --------- line &lt; please read the back Note: Please fill in this page again.) Member of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 Printed by Consumer Cooperative 4371 03 ------- 6. The scope of patent application and a p-side region 蜮 containing a plurality of nitride semiconductor layers is characterized by : At least one nitride semiconductor layer in the η-side region is an η-type multilayer film formed by stacking a plurality of nitride semiconductor films: at least one nitride semiconductor layer in the P-side region is The p-type multilayer film layer formed by stacking a plurality of nitride semiconductor films; 1 The number of stacked layers of the nitride semiconductor film constituting the n-type multilayer film layer is different from that of the nitride semiconductor film constituting the p-type multilayer film layer Stacked layers. 49. A nitride semiconductor device having an active layer, wherein the active layer is interposed between an n-side region containing a plurality of nitride semiconductor layers and a p-side region containing a plurality of nitride semiconductor layers, It is characterized in that at least one nitride semiconductor layer in the n-side region is an n-type multilayer film layer formed by stacking a plurality of nitride semiconductor films: at least one nitride semiconductor layer in the p-side region Is-a p-type multilayer film layer formed by stacking a plurality of nitride semiconductor films; and a composition system constituting the n-type multilayer film layer is different from a composition constituting the p-type multilayer film layer, and constitutes the n-type multilayer film The number of stacked nitride semiconductor films is different from the number of stacked nitride semiconductor films constituting the P-type multilayer film. 5 〇 The nitride 3P164T as described in any one of the scope of patent application No. 4 7 ~ 4 9 The paper size is applicable to Chinese national standard (CNS &gt; A4 specification (210 X 297 mm)! ^ --- · ----- Order · -------- Line (Please read the precautions on the back before filling this page) ά37ί 03, VI. Patent application semiconductor devices, in which the number of stacked layers of the nitride semiconductor film constituting the P-type multilayer film layer is less than the number of stacked layers of the nitride semiconductor film that constitutes the n-type multilayer film layer "5 1. The nitride semiconductor device according to item 47 of the application, wherein the n-type multilayer film layer contains AUGahNCOSzCl) and InpGahpNttXpcl); and the p-type multilayer film layer contains AlxGa 丨. X N (0 &lt; X &lt; 1), and I ny G a !. y N (0 S y &lt; 1). 5 2 · The nitride semiconductor device according to item 47 of the scope of patent application, wherein the P-type multilayer film layer and / or the n-type multilayer film layer are formed by means of modulation doping &quot; --- ----------'--.-- I--Order · --- I ----- {Please read the notes on the back before filling out this page) Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative printed 165 pages This paper size applies to Chinese national standards (CNS &gt; A4 regulations (210 * 297 mm>