TW411536B - Chip scale packages and methods for manufacturing the chip scale packages at wafer level - Google Patents

Chip scale packages and methods for manufacturing the chip scale packages at wafer level Download PDF

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Publication number
TW411536B
TW411536B TW088100193A TW88100193A TW411536B TW 411536 B TW411536 B TW 411536B TW 088100193 A TW088100193 A TW 088100193A TW 88100193 A TW88100193 A TW 88100193A TW 411536 B TW411536 B TW 411536B
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Taiwan
Prior art keywords
layer
wafer
patent application
insulating layer
semiconductor
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TW088100193A
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English (en)
Inventor
Nam-Seog Kim
Dong-Hyeon Jang
Sa-Yoon Kang
Heung-Kyu Kwon
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Samsung Electronics Co Ltd
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Publication of TW411536B publication Critical patent/TW411536B/zh

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    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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經濟部中央樣车局貝工消費合作社印裝 411536 A7 _____B7_ 五、發明説明（1 ) 發明背景 發明領域 本發明係有關晶片規格包裝物及製備晶元程度之包裝 物之方法。 相關技術之描述 電子裝置之迷你化（其係電子工業之主要趨勢之一） 已導致許多製備小包裝物之技術之發展，特別是具有近乎 與半導體積體電路晶片等大小之包裝物。Joint Eiectronic Engineering Council(JEDEC)已提出“晶片規格包裝物 ’’(CSP)之名詞’其係一種小包裝物，即，CSP之JEDEC之 定義係具有外形為包含於包裝物内之半導體晶片外形之 1.2倍或更小之包裝物》 許多公司及機構已發展其自己之CSP製備技術，且一 些已將其自己之技術或產品商業化。但是，當與半導趙工 業中已建立之塑膠包裝物相比’大部份之此等新發展之 CSP於產品之信賴度、製程之信賴度及製備成本等領域具 有許多缺失。因此，為了商業化之CSP之廣泛及成功，具 有較佳方法及產品可信賴度及較低製備成本之新的CSP被 建議6 綜述 依據本發明，晶片大小之包裝物（csp)以晶元程度製 備之。CSP包含用以使晶片塾再分佈於半導體晶片上之導 體層，一或二個絕緣層及焊料塊，其係作為CSp之終端且 藉由導體層連接至個別之晶片塾。於一實施例中，導體層 本紙張尺度適用中國囷家標隼（CNS ) Μ规格（210父297公^~5 -- ；— I 1 n I n I I : I i n ^ n f ^ *-, (請先聞讀背面之注意事項再¥寫本頁) 411536 A7 B7 五、發明説明（2 ) 係直接形成於半導體晶元之表面或惰性層，於另一實施例 中，於絕緣層形成於半導體晶元表面上後，導體層形成於 絕緣層上。於二實施例中，另一絕緣層係形成於導體層上 ，且額外之金屬層可形成於晶片墊及導體層之間，及焊料 塊及導體層之間，以改良界面整體性。 此外」一之可信賴性，強化層、端緣保護層 及晶片尾瘦供之。形成於上絕緣層上之強化層吸收 CSP置於電路板及被作為延伸期時之施於焊料塊之應力， 且延申焊料塊之生命期。端緣保護層係形成於沿著半導體 晶元上之刻劃線，且晶片保護層係形成於半導體晶元之背 面。端緣保護層及晶片」^護避—兔XLSP屋力。於半 導體晶元上形成所有元素後，半導體晶元切割而製備個別 之CSP。 依據本發礼之方法使用現今可用之技術，因 此，無需發展新的技術或裝f *再者，本發明之晶元程度 之CSP製備係比於使半導體晶元切割成積體電路晶片後於 晶片上製備CSP之晶片程度之更具生產性。 圖示簡要說明 第1圊係半導體晶元之上視圖，其包含半導體積體電 路晶片及形成於其上之刻劃線。 第2圖係第1圖之半導體晶元之部份之截面圍。 第3圖係顯示第2圖之於半導體晶元表面上形成金屬層 後之結構。 第4圖顯示第3圖之於金屬層上形成具圖案之光阻層之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公着） 1— 1111 7 Γ-裳 .I n 線 (請先閲讀背面之注意事項再壤寫本頁) 經濟部中央標準局貝工消費合作社印装 經濟部中央梂隼局月工消費合作社印製 411536 A7 ___ B7五、發明説明（3 ) 結構》 第5圖顯示第4圖於使用圖案光阻層為光罩蝕刻金屬層 以製備具圖案之導體層之結構。 第6圖係顯示第5圖於移除囷案之光阻層後之結構。 第7圈圖顯示第6圓於包含圖案導體層之半導體晶元之 整個表面上形成絕緣層後之結構》 第8圖顯示第7圖於形成開口如此圈案之導體層被曝露 ’而金屬塊被連接至囷案導體層後之結構。 第9圖類示第8圖之於半導體晶元之整個表面上形成障 壁層後之結構。 第10囷顯示第9圓於形成另一光阻層如此絕緣層開口 及圍繞於開口之絕緣層部份被曝露後之結構。 第π圈顯示第ίο囷於在未以光阻層覆蓋之區域上形成 中間產物塊後之結構》 第12圖顯示第11圖之於移除光阻層後之結構。 第13圖顯示第12圖之於移除障壁層後之結構。 第14圖顯示第13圖於絕緣層上形成強化層後之結構， 且例示依據本發明之實施例之CSP之截面圖》， 第15圖係依據本發明之CSP之底視圖。 第16圖顯示於除晶元墊之半導體晶元之整個表面上形 成較低絕緣層後之結構。 第17圖顯示第16圖於半導體晶元之整個表面上形成黏 著層後之結構。 第18圖顯示第17圖於黏著層上形成具圊案之光阻層後 本紙法尺度適用中SH家標率（CNS )八4胁（21GX297公釐) ~~ -------'--1^-----—-ST-------& m (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消费合作社印装 411536 五、發明説明（4 ) 之結構。 第19圖顯示第18圖於其間缺乏具圖案之光阻層之黏著 層上形成具圈案之導體層後之結構。 第20圖顯示第19圖之於移除具圖案之光阻層及在具圊 案之光阻層下之黏著層後之結構。 第21圖係第20圖於除其間焊料塊形成者外之半導體晶 元之整個表面上之上絕緣層形成後之結構。 第22圓顯示第21圖於上絕緣層上形成強化層後之結構 及例示依據本發明之例一實施例之截面圓。 第23圊顯示部份之依據本發明之包含端緣保護層及晶 片保護層之半導體晶元。 第24圖係由第23圖之半導體晶元切割而成之CSP之截 面。 第25圖係具有可產生於缺乏端緣保護層及晶片保護層 時產生之受損之CSP之載面圖》 於不同囷中使用相同之參考符號表示相似或相同之項 目0 較佳實施例之詳細描述 本發明提供包含能改良包裝物之信賴性之許多特徵之 CSP及CSP之晶元程度之製造方法。 第2-14圖例示依據本發明之SCP及製備CSP之方法》 特別是，第14圖顯示CSP之部份截面圖。 如第1圖所示’製備第14圖之CSP開始於具有數個半 導體積艘電路晶片50及位於半導體晶片5〇間之刻劃線52之 本紙張尺度適用中国國家標隼（CNS ) A4規格（210 X 297公兼） I 1 n ^ IH ^ 訂 ^ 線 (請先閱讀背面之注意事項再球寫本頁) A7 B7 —»-—4ll53fi 五、發明説明（ 半導體晶丨40«第2圈係半導體晶元4〇之-部份之截面圖 ’其顯不晶片塾丨2及半導體晶片5〇之惰性層14。晶片墊12 係連接至半導趙晶片5〇之電路（未示出）之許多晶片墊之 一者，且提供對於外電連接之可能。因製備第〗圖之半導 體晶凡40係已知技術，其製備之詳細解釋在此不為之。 參考第3圖，金屬層16形成於包含晶片墊12及惰性層14 之半導艘晶元40之整個表面上，如此，使金屬層16及晶 片墊12間之電相連接）金屬層i6之厚度係大於構成惰性層 14下之晶片電路圖之金屬層之厚度，且較佳係丨-〜^。金 屬層16可由各種不同金屬製成，包含銅、鋁、鎳、銅合金 '銘合金及鎳合金，但不限於此。 於半導體晶元40表面上形成金屬層後，形成圖案之 導趙層之金屬層16之形成圖案依循之，如第4_6圊所示。 首先’如第4圖所示’具圖案之光阻層18形成於金屬層16 上°具圈案之光阻層18僅覆蓋將構成具圖案之導體層17之 區域。然後’蝕刻金屬層（第5圊）及移除具圖案之光阻 層（第6圖）留下具圖案之導體層17’其具有依據晶片墊12 之再分佈平面之蹰案。 形成具圓案之導體層17之另一方法係直接於晶片墊12 及惰性層14上篩網印刷導體漿料（未示出），且固化該聚 料以製備具圖案之導體層17 »例示之漿料可為金屬顆粒及 黏合樹脂之混合物。 第7圖顯示於形成具圖案之導體層17後形成於整個半 導體晶元40表面上之絕緣層24。絕緣層24變成第14圖中 冬紙張尺度適用中國國家標準（CNS Μ4規格（2丨0X297公釐） τ -·.丨裝丨 .丨訂線 {許先閱讀背面之注$項*.'填寫本頁) 經濟部中央標準局貝工消費合作社印製 8 經濟部中央樣準局員工消費合作社印製 A7 411536 B7 五、發明説明（6 ) 之C S P之·—部份，因此’具有所欲之性質，例如，低済氣 吸收率'低介電常數及低熱膨脹係數》考量此等性質，bcb( 笨并環丁烯）係適於絕緣層24。除BCB外，其它之聚合物 ’例如，聚醯亞胺及環氧化物及無機材料，例如，氮化發 、二氧化矽及氮化矽及二氧化矽之混合可被作為絕緣唐24 。傳統之旋轉塗覆方法可形成聚合物絕緣層，且傳統之化 學蒸氣沈精法可形成無機絕緣層。於此二情況中，絕緣廣 之厚度較佳係2-50um。 參考第8圖’絕緣層24被部份移除以形成塊狀塾22之 開口’其係具圓案之導想層17之一部份，其曝露於開口。 塊狀墊22可被稱為重新分佈之晶片墊12，且晶片墊22之位 置依包含塊狀墊22被表面置放之CSP之板之設計而定。 於形成開口後，金屬障壁層26被形成以覆蓋絕緣層24 及塊狀墊22,如第9圓所示。障壁層26不僅壁免具圖案之 導體層17與塊狀物32間之擴散，如第14圖，亦促進具圈案 之導體層與塊狀物32間之黏者》再者，障壁層26於塊狀墊 22上提供塊狀物32之電子電鑛金質。障壁層 26通常包含二或三個副層，且例如，包含敛/銅、欽/欽-銅 /銅、鉻/鉻-銅/銅、鈦-鎢/藏、鋁/鎳/銅或鋁/鎳-釩/銅之結 橡^於形成鈦/鈦-銅/銅或鉻/鉻-銅/銅之結構中，喷濺裝置 使用二目標以同時形成中壯層，結構中之鈦·銅層或鉻_銅 層。黏著層（未示出），其具有與障壁層26相同之結構， 可於第3圖中之金屬層16形成前形成於晶片墊12及金屬層 16之間》障壁層26及黏著層之厚度係1 u啊或更少，較佳係 本紙張尺度適用中困國家標準（CNS ) A4規格（2! Ο X 297公釐） 9 -----.--_---I^-- {請先聞讀背面之注意事項為填寫本頁) 訂 411536 A7 經濟部中央樣準局員工消費合作社印製 B7五、發明説明（7 ) 0.8-lum。於障壁層26上，如第10圖所示，另一保護層28 形成以使絕緣層24之開口及圍繞開口之區域被曝露》然後 ，塊狀物32之金屬，較佳係焊料合金，被電鍍以於未以光 阻層28覆蓋之區域上形成中間塊狀物30 t如第11圖所示。 替代電鍍方法，焊料漿料之篩網印刷、預形成之焊料球之 置放及金屬喷射方法，其將液態焊料喷於絕觔層内之開口 ，亦可產生中間塊狀物30。於形成絕緣焊料塊狀物30前， 銅層（未示出）可於塊狀墊22之障壁層26上形成數um至 數十um厚，以避免於使金屬中間焊料塊狀物30再成形成 焊料塊狀物32之再流動方法期間因中間焊料塊狀物30與障 壁層26間之擴散而造成之信賴性問題》 於形成中間焊料塊狀物30後，光阻層28及障壁層26藉 料蝕刻移除之，且僅有中間焊料塊30下之障障金屬部份27 保留，如第12圖所示。然後，傳統之重新流動方法使中間 焊料塊30重新成形成焊料塊32,如第13圖所示。於此實施 例中，焊料塊32之高度係位於350um與500um之間。 再者，如第14圖所示，<化層34可形成於絕緣層24上 ，以支持焊料塊32及吸收CSP被置於電路板（未示出\及 作為延伸期使用時施於焊料塊32之應力。此應力造成之失 敗於先前之CSP中係平常之問題》對於形成覆蓋層34,具 有低黏度之液態聚合物可被分散及固化。液態聚合物之低 黏度使表面張力拉伸聚合物至塊狀物31之侧邊，而產生塊 狀物32之凹支持。於固化後之具有較高斷裂強度之聚合物 係較佳，因為斷裂強度愈高，強化層34可自焊料塊32吸收 ----------.丨裝-----^丨訂_------線 - - (請先閱讀背面之注意事項再镇寫本頁) 本紙張尺度適用中國國家梯率（CNS } A4規格（210X297公釐） 411536 A7 B7 經濟部中央樣準局貝工消費合作社印裳 五、發明説明（8 ) 之強化層3 4不應覆蓋焊料塊佳者 係強化層34於低於焊料塊32頂部1/4焊料塊高度之一點與 焊料塊32會面。 最後，經由第2-14圖所例示之步驟之半導體晶元40 沿著刻劃線52切割以製備第15圖所示之個別CSP。 為對CSP提供更多保護以免於實際使用時之外在衝擊 及施用於CSP之熱-機械應力，本發明之另一實施例包含 二絕緣層及另外之保護層。此實施例係描述於第16-24圖 〇 參考第16圊，較低之絕緣層60係成於包含晶片墊12及 惰性層14之半導體晶元40上。於半導體晶元40之整個表 面上形成絕緣層之後，晶片墊12上之絕緣層被蝕刻以製備 作為進一步接連之開口。傳統之蝕刻方法可移除晶片墊12 上之絕緣層。較低之絕緣層60變為CSP1—部价，第22圖 所示，且需具有所欲之性質，諸如，低濕氣吸收率、低介 電常數及低熱膨脹係數。諸如BCB、聚醯亞胺及環氧化物 之聚合物及諸如氮化矽、二氧化矽及氮化矽及二氧化創之 混合物之無機材料可被用於較低之絕緣層60。此等中BCB 係較佳之作為較低絕緣層60 »形成較低絕緣層60之方法基 本上係相同於形成如上所述之絕緣層24之方法。較低絕緣 層60之厚度係較佳為2-5 Oum。 於形成較低絕緣層後，黏著層形成而覆蓋較低絕緣層 60及晶片墊12,如第17圖所示=黏著層62促進第19圖之具 圖案之導體層66與晶片墊12間之黏著。黏著層62 —般包含 本紙張尺度適用中國國家標準（CNS)A4規格（ 210X297公釐） ^ 11 ^ ^ 裝 ^ 訂 線 {請先閣讀背面之注意事項异填寫本頁) Α7 Β7 411536 i、發明説明（9 ) 二或三個副層，諸如，鈦/銅、鈦/鈦-銅/銅、鉻/鉻-銅/銅 、欽-鋒/鋼或銘/錄/銅。黏著層62之厚度係約0·5νπχι。 參考第18-20圖，具圖案之導體層66之形成被解釋。 首先，具囷案之光阻層64形成於包含於其上之黏著層62之 較低絕緣層60上，如此具圖案之光阻層於會形成具困案之 導體層66處係缺乏〃然後，沈積方法於黏著層62上形成具 圖案之導體層66，其間黏著層62經由具圖案之光阻層64嗓 露。脫離方法移除具圖案之光阻層64且蝕刻方法曝露黏著 層62。具圖案之導體層66係由各種材料形成，其包含銅、 鋁、鎳、銅合金、鋁合金及鎳合金，但不限於此。另外， 形成具圖案之導體層66可藉由相似於上述參考第3-6圖所 解釋者之方式完成。如第21圖所示，於形成具圖案之導體 層66後，上絕緣層68形成，其曝露具圖案之導體層66之部 份，其間塊狀物74形成。其後，障壁層72，塊狀物74及強 化層76形成’產生如第22囷所示之CSP »自形成上絕緣層 68至形成強化層76之製備步驟係相同於參考第7-14圖所述 之步驟。上絕緣層68,障壁層72,塊狀物74及強化層76之特 徵亦係相同於上述者。 此實施例可進一步包含多個保護層：端緣保護層8〇及 晶片保護層82。第23圖顯示沿著刻劃線52形成於半導體晶 元40上之端緣保護層及形成於半導體晶元4〇背後之晶片 保護層82。切割第23圖中之半導體晶元40造成第24圖中 之CSP100。於缺乏端緣保護層80及晶片保護層82令，晶 元切割及其後之CSP100處理可產生CSP之缺失，諸如，如 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公着） (請先閱讀背面之注意事項再填寫本頁〕 裝 訂 經濟部中央標準局貝工消費合作社印製 12 411536 A7 五、發明説明（10) 第25圖所示之端緣晶片。 於瑰狀物74形成前，端緣保護層80可藉由使用防護罩 或點計聚合物（例如，環氧樹脂）及固化聚合物而形成之 。端緣保護層80較佳係較刻劃線52寬，如此，部份端緣保 護層80沿著週圍留於CSP100上，如第24圖所示》端緣保 護層80之高度係較塊狀物74小。較佳係端緣保護層80之高 度小於塊狀物74之高度之1/10。 晶片保護層8 2可於半導體晶元最後製備後藉由使聚合 物（諸如，聚醯亞胺及環氧化物）旋轉塗覆於半導體晶元 之背後而形成之。晶片保護層之較佳厚度係2-50um。 經濟部中央標準局負工消費合作杜印製 依據本發明製備CSP顯示許多優於習知技藝之其它 CSP之優點。優點包含見可該賴性、藉由端緣 保護層及晶片保護層保護CSP，及改良之可製備性j強化 層吸收當CSP置於電路板上且用於延伸期時施於焊料塊之 應力，且延伸焊料塊之使用期，因此v^OlCSP之先月^ 。端緣保護層及晶片保護層避免CSP受外力而損害。依據 本發明之CSP製備方法使用現今可用之技術，因此，無需 發展新的技術及裝置《再者，本發明之晶元程度之CSP製 備係較晶片程度之製備（其於切割半導體積體電路晶片後 製備CSP)更具生產力》 雖然本發明已參考特殊實施例描述，此等描述及本發 明應用之一例子，且不應被作為限制。所揭露之實施例之 特徵之各種應用及結合係位於如下申請專利範圍所界定之 範圍内。 13 (請先閲讀背面之注意事項寫本頁} 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公釐） 411536 A7 B7 五、發明説明（η ) 元件對照表 12…晶片整 40···半導體晶元 14*··惰性層 50…半導體積體電路晶片 16…金屬層 52···刻劃線 17…導體層 60…絕緣層 18…光阻層 62…黏著層 22…塊狀墊 64…光阻層 24…絕緣層 66-··導體層 26…金屬障壁層 68…上絕緣層 27…障壁金屬 72…障壁層 28…保護層 74…塊狀物 30…中間塊狀物 76+*·強化層 3 1…塊狀物 80…端緣保護層 32…塊狀物 82…晶片保護層 34…強化層 ------Γ--，丨裝-----：丨訂_------線 f 0 (請先閱讀背面之注^^項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家橾準（CNS) A4規格（2!0X297公羞） 14

Claims (1)

  1. 經濟部中央標準局員工消費合作社印製 15 A8 B8 C8 * _________D8 六、申請專利ϋ ' ~~~~ i· 一種半導想包裝物，包含： 半導體積體電路晶片，具有數個晶片墊及惰性層 * 數個凸山之外終端，其係電連接至個別之晶片墊 t 具圖案之導體層，其使該晶片幸與個別之外終端 連接；及 強化層，其覆蓋及填充該外終端間之空間，該強 化層提供該外終端之週圍支持。/ 2. 如申請專利範圍第丨項之半導體包裝物，其另外包含 上絕緣層，其係形成於該具囷案之導體層上，該上絕 緣層具有數個開口，經由該等開口，該外終端連接至 該具圖案之導體層。 3. 如申請專利範圍第2項之半導體包裝物，其中該上絕 緣層含有聚合物材料，其係選自苯并環丁烯、聚醯亞 胺及環氧樹脂。 4·如申請專利範圍第1項之半導體包裝物’其另外包含 較低之絕緣層，其係形成於該具圖案之導體層與該半 導體晶片之該惰性層之間，該較低絕緣層具有數個開 口，經由該等開口該晶片墊接連至該具圖案之導體層 〇 5·如申請專利範圍第1項之半導體包裝物，其另外包含 晶片保護層，其係形成於該半導體晶月月後表面上 本纸張尺度適用中國國家橾準（CNS ) A4洗格（210X297公釐)一 (請先閲讀背面之注f項再填寫本頁) .裝- 1T. 線 ABCD 411536 A、申請專利範圍 6. 如申請專利範圍第5項之半導體包裝物，其中該晶片 保護層含有聚合物。 7. 如申請專利範圍第5項之半導體包裝物，其中該晶片 保護層之厚度係2與50um之間。 8-如申請專利範圍第1項之半導體包裝物，其另外包含 端緣保護層’其沿著週圍形成於該半導體包裝物之上 表面。 9. 如申請專利範園第8項之半導體包裝物，其中該端緣 保護層係由聚合物製成。 10. 如申請專利範圍第丨項之半導體包裝物，其中該強化 層係低於連接該外終端之頂部之表面 11·如申請專利範圍第10項之半導體包裝物，其中從該表 面至其間該強化層與該外終端會面之點之垂直距離係 约100um 。 12. —種製備半導艘包裝物之方法，包含： 提供半導體晶元’其具有數個半導體積體電路晶 片及數個刻劃線，每一半導體晶片具有數個晶片墊及 位於其上之惰性層； 於該惰性層上直接形成具圖案之導體層； 於該具圖案之導體層上形成絕緣層； 形成該半導體包裝物之數個外終端；及 本紙張尺度適用中國國家揉率（CNS )八4規格（2ΐ〇χ297公釐） 丨_^ I-_---Γ丨裝------—訂------線 (請先閲讀背面之注$項再填寫本頁) 經濟部中央橾率局員工消費合作社印裝 16 A8 B8 C8 DB 411536 申請專利範圍 將該晶元切割以分離該半導體積體電路晶片； 其中’該具圖案之導體層連接每一晶片塾至個別 之外終端，該絕緣層包含數個開口，經由該等開口， 該外終端連接至該具圖案之導體層。 13. 如申請專利範圍第12項之方法，其中形成該外終端包 含： 於該絕緣層内之開口置放焊料球，如此，每一焊 料球位於相關之開口上；及 加熱該焊料球以使該焊料球重新成形且使該焊料 球附接於該具囷案之導體層。 14. 如申請專利範圍第12項之方法，其中形成該外終端包 含： 使用具有數個防護罩開口之防護罩篩網印刷焊料 漿料，每一個防護罩開口係對應於每一塊狀物開口； 及 加熱該焊料漿液，以形成附著於該塊狀塾上之該 焊料塊狀物β 15. 如申请專利範圍第〗2項之方法，其另外包含於該絕緣 層上形成強化層，其中該外侧終端係經由該強化層曝 出。. 16. 如申請專利範圍第15項之方法，其中該強化層係由聚 合物形成。 i I r! J 裝 訂 111 —ί !線 (錆先閲讀背面之注意事項再填寫本頁) 經濟部中央樣準局負工消費合作社印聚 17 - 411536 Α8 Β8 C8 D8 六、申請專利範圍 17. 如申請專利範圍第16項之方法，其令形成該強化層包 含分散作為該強化層之液態聚合物及固化該聚合物。 18. 如申請專利範圍第15項之方法，其中該強化層低於連 接該外終端之頂部之表面。 19. 如申請專利範圍第18項之方法，其中從該表面至其間 該強化層與該外終端會面之點之垂直距離係約1〇〇um 〇 20. 如申請專利範圍第〗2項之方法，其中該具圈案之導艘 層包含篩網印刷導電漿料及固化該漿料。 21·如申請專利範圍第12項之方法，其中形成該具圈案之 導體層包含電鍍金屬層及蝕刻該金屬層β 22.如申請專利範圍第12項之方法，其中該絕緣層含有聚 合物材料’其係選自苯并環丁烯、聚醯亞胺及環氧樹 脂。 23_如申請專利範圍第12項之方法’另外包含於該半導雜 晶元之後侧上形成晶片保護層。 經濟部中央樣準局貝工消費合作社印裝 24.如申請專利範圍第23項之方法，其中該晶片保護層係 藉由旋轉塗覆方法形成。 25·如申請專利範圍第丨2項之方法，另外包含於該半導艘 晶元之上表面沿著刻劃線形成晶片端緣保護層。 26·如申請專利範圍第25項之方法，其中形成該晶片端緣 保護層包含使液體材料分散於該晶元上之該刻劃線上 18 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家榇準（CNS ) Α4規格（210 X 297公釐） 411536 A8 B8 C8 D8 經濟部中央標準局員工消費合作社印製 夂、申請專利範圍 〇 广 27. —種製備半導體包裝物之方法，包含： 提供半導體晶元’其具有數個半導體積體電路晶 片及數個刻劃線，每一半導體晶片具有數個晶片墊及 位於其上之惰性層； 於該半導艘晶片之該惰性層上形成較啤之絕緣層 ’該較低絕緣層具有位於該晶片墊之開口； 形成具圖案之導體層’其經由該較低絕緣層内之 該等開口連接至該晶片墊； 於該具圖案之導想層上形成上絕緣層，該上絕緣 層具有開口’其曝露該具囷案之導趙層之部份： 於該上絕緣層之開口處形成該半導體包裝物之數 個外終端’該外終端連接至該具圖案之導體層，其中 該具圖案之導體層接連至該個別外終端之每一晶片塾 t 於該上絕緣層上形成強化層；及 將該晶元切割以分離該半導體積體電路晶片。 28. 如申請專利範圍第27項之方法，其中該上絕緣層包含 聚合物材料，其係選自苯并環丁烯、聚醯亞胺及環氣 樹脂。 29_如申請專利範圍第27項之方法，其中該較低絕緣層含 有聚合材料’其係選自笨并環丁烯、聚醯亞胺及環氧 本紙張XAiW t gl國家標率（CNS ) ( 2丨GX297公釐） 19 裝-----^訂------線 (請先閎讀背面之注項再填寫本頁) A8 B8 C8 D8 六、申請專利範圍 樹脂。 30.如申請專利範圍第27項之方法，其中該較低絕緣層係 由無機材料形成" IM 1— T- i裝— ： 訂 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印策 20 本紙張尺度適用中國國家標準（CNS ) A4规格（2l〇X25>7公釐）
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