JP3756689B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP3756689B2
JP3756689B2 JP02947999A JP2947999A JP3756689B2 JP 3756689 B2 JP3756689 B2 JP 3756689B2 JP 02947999 A JP02947999 A JP 02947999A JP 2947999 A JP2947999 A JP 2947999A JP 3756689 B2 JP3756689 B2 JP 3756689B2
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wafer
resin
protective tape
back surface
semiconductor element
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JP2000228465A (ja
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伸仁 大内
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Oki Electric Industry Co Ltd
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Oki Electric Industry Co Ltd
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Priority to US09/497,684 priority patent/US6271588B1/en
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Priority to US09/878,375 priority patent/US6734092B2/en
Priority to US10/800,693 priority patent/US20040173895A1/en
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Description

【０００１】
【発明の属する技術分野】
本発明は半導体装置、特に樹脂封止型半導体装置及びその製造方法に関するものである。
【０００２】
【従来の技術】
近年、携帯機器が急速に普及し、これに伴ってその中に搭載される樹脂封止型半導体装置も薄型、小型、軽量のものが要求されるようになっており、これらに対応するために数多くのものが提案されている。
【０００３】
その１つとして例えば図４に示すような従来の半導体装置がある。半導体素子１の主面に形成した電極パッド２に銅（Ｃｕ）の再配線３を電気的に接続させ、更に、再配線３に接続して約１５０μｍ高さのＣｕポスト４を形成している。そしてそのＣｕポスト４の高さに樹脂層５を形成して封止し、露出したＣｕポスト４の先端部には半田ボール６等の金属で外部接続用端子が形成されている。
【０００４】
ここまでの工程はすべて半導体素子１が複数ならんでいるウエハ状態で処理され、最後にダイシング処理されて個片化される。このような半導体装置は半導体素子の大きさに極めて近い、いわゆるチップサイズパッケージの半導体装置となる。
【０００５】
【発明が解決しようとする課題】
しかしながら、上記構成の装置では、図５に従来の樹脂封止工程を示したように、Ｃｕポスト４を完全に覆うように樹脂封止する際、複数の半導体素子１から成るウエハを上型７と下型８から成るモールド金型にセットする。
【０００６】
このとき、モールド金型内のよごれなどの異物が半導体素子１の裏面に接触して傷をつけ、更にはクラック９に至ることがある。
【０００７】
その後、樹脂キュアした後、Ｃｕポスト４の先端を露出するため、図６に従来の表面研磨工程を示したように、研磨剤１０によって表面研磨する。
【０００８】
研磨するために、ウエハを研磨ステージ１１の真空孔１２から真空引きで固定するが、ウエハが反っているため真空引きがうまくいかず、表面研磨ができない場合が生ずる。
【０００９】
このウエハの反りは、ウエハ（半導体素子１）とその上に封止されている樹脂層５との膨張係数の差で生じ、樹脂層５の厚み、材料の種類によって多かれ少かれ起こるものである。
【００１０】
また、最近では、半導体素子の主面だけでなく、裏面にも封止樹脂層を形成したものが提案されているが、樹脂注入が両面になり、その分樹脂層が厚くなるという問題があった。
【００１１】
【課題を解決するための手段】
上記した課題を解決するため、本発明は半導体素子の主面を樹脂層で樹脂封止し、裏面に保護テープを接着するようにしたものである。
【００１２】
【発明の実施の形態】
図１は本発明の参考例を示す断面図で、図４と同じ構成要素には同じ符号を付してある。
【００１３】
半導体素子１の主面に電極パッド２を形成し、電極パッド２に電気的接続手段であるＣｕの再配線３を接続し、更に再配線３に電気的接続手段であるＣｕポスト４を接続させて所定の高さに形成し、その主面を樹脂層５で樹脂封止し、露出しているＣｕポスト４の先端部に外部接続用端子の半田ボール６を取り付けてある。
【００１４】
そして、半導体素子１の裏面に保護テープ２０を接着している。保護テープ２０は接着機能を備えた硬化した合成樹脂例えばポリイミドやエポキシ系の樹脂で形成され、脆弱材料である半導体素子１の裏面を保護している。
【００１５】
以上のように、本発明の実施形態によれば、半導体素子１の裏面を保護テープ２０で接着して保護するので、何らかの外力が加わったり、異物が接触することによるクラックを防止することができ、また半導体素子１の主面のみを樹脂封止し、裏面に保護テープ２０を接着しているので、樹脂注入が片面のため充填し易く、厚さの薄いチップサイズパッケージの半導体装置を実現することができる。
【００１６】
図２は本発明の半導体装置の製造方法を示す図で、それぞれ各製造工程を断面図で示している。
【００１７】
（ａ）は複数の半導体素子１から成り、半導体素子１の主面に電極パッド２を形成し、この電極パッド２に電気的接続手段であるＣｕの再配線３、Ｃｕポスト４を接続するように設けたウエハを準備する工程を示している。
【００１８】
（ｂ）はこのウエハの裏面にウエハとほぼ同じサイズで保護テープ２０を接着する工程を示しており、電極パッド２、再配線３の表示は以下の図面を含めて省略している。
【００１９】
保護テープ２０を接着してウエハの裏面に貼り付ける方法は通常のダイシングテープの場合と同様である。
【００２０】
（ｃ）は樹脂封止工程を示したもので、裏面に保護テープ２０が貼り付けられたウエハを上型７と下型８から成るモールド金型にセットし、Ｃｕポスト４を完全に覆うように樹脂を充填し、熱処理して樹脂層５を形成し、半導体素子１の主面を樹脂封止する。
【００２１】
この時、ウエハ（半導体素子１）の裏面は保護テープ２０でカバーされているので、金型内のよごれなどの異物がウエハの裏面に接触することがなく、半導体素子１にクラックが発生することを防止できる。
【００２２】
（ｄ）は表面研磨工程を示したもので、ウエハを研磨ステージ１１に真空孔１２からの真空引きで固定する。
【００２３】
ウエハの裏面は保護テープ２０が接着されているので、従来のようにウエハが反ることもなく、研磨ステージ１１にきちんと固定され、研磨剤１０によってＣｕポスト４の先端部が露出するまで研磨される。
【００２４】
ウエハの反りはウエハ（半導体素子１）とその主面を封止している樹脂層５との膨張係数の差で生じるものであるが、裏面に保護テープ２０を貼り付けたことによってウエハの表裏で膨張、収縮にバランスがとれ、反りが低減されている。このため、ウエハの研磨ステージ１１への固定が容易になり、表面研磨が確実に行えるようになった。
【００２５】
（ｅ）は樹脂層５の表面に露出したＣｕポスト４の先端部に外部接続用端子である半田ボール６を取り付ける工程を示している。
【００２６】
（ｆ）は上記した工程を終えたウエハを切断刃１３によって切断線１４でカットし、個片化する工程を示している。
【００２７】
上記したように、樹脂封止が半導体素子１の片面だけなので、半導体装置を薄くすることができるが、更に薄くするためには、ウエハの裏面を研磨することが行われる。
【００２８】
この裏面研磨は（ｄ）に示した表面研磨工程の後に行われるが、この際、ウエハの裏面から保護テープ２０をＵＶ（紫外線）照射で剥離し、その後、裏面研磨することになる。この時点では熱処理はないので、保護テープ２０を剥がしても何ら問題はない。
【００２９】
なお、上記の例では、電気的接続手段として再配線３、Ｃｕポスト４で、また外部接続用端子として半田ボール６で説明したが、これに限定されるものではない。
【００３０】
【課題を解決するための手段】
上記したように、本発明によれば、半導体素子の裏面に保護テープを接着しているので、外力や異物によるクラックの発生を防止でき、また、半導体素子の主面のみを樹脂封止するので、樹脂の充槇が容易で厚さを薄くすることができる。
【００３１】
また、樹脂封止工程の前にウエハの裏面に保護テープを接着するので、樹脂封止工程でのウエハへの傷の低減、ウエハの反りの防止が図れ、表面研磨工程の容易化を実現することができる。
【図面の簡単な説明】
【図１】 本発明の参考例を示す断面図
【図２】本発明の製造方法を示す図（その１）
【図３】本発明の製造方法を示す図（その２）
【図４】従来の構造を示す断面図
【図５】従来の樹脂封止工程を示す図
【図６】従来の表面研磨工程を示す図
【符号の説明】
１ 半導体素子
２ 電極パッド
３ 再配線
４ Ｃｕポスト
５ 樹脂層
６ 半田ボール
７ 上型
８ 下型
１０ 研磨剤
１１ 研磨ステージ
１２ 真空孔
１３ 切断刃
２０ 保護テープ

Claims (1)

  1. 電極パッドと、前記電極パッドと電気的に接続された接続手段とを備えた複数の半導体素子が形成された種面を有するウエハを準備する工程と、
    前記ウエハの裏面に保護テープを接着する工程と、
    前記保護テープを接着したウエハを金型にセットして、前記ウエハの表面を樹脂封止する工程と、
    前記ウエハの表面を樹脂封止する工程後、封止樹脂の表面を研磨する工程と、
    前記封止樹脂の表面に露出した前記接続手段に外部接続用端子を電気的に接続する工程と、
    前記封止樹脂の表面を研磨する工程後に、前記保護テープを剥離し、前記ウエハの裏面を研磨する工程と、
    前記各工程を施した後のウエハを個片化する工程とを備えたことを特徴とする半導体装置の製造方法。
JP02947999A 1999-02-08 1999-02-08 半導体装置及びその製造方法 Expired - Fee Related JP3756689B2 (ja)

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US09/497,684 US6271588B1 (en) 1999-02-08 2000-02-04 Semiconductor device and manufacturing method thereof
US09/878,375 US6734092B2 (en) 1999-02-08 2001-06-12 Semiconductor device and manufacturing method thereof
US10/800,693 US20040173895A1 (en) 1999-02-08 2004-03-16 Semiconductor device and manufacturing method thereof

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