TW260831B - - Google Patents

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Publication number
TW260831B
TW260831B TW083111270A TW83111270A TW260831B TW 260831 B TW260831 B TW 260831B TW 083111270 A TW083111270 A TW 083111270A TW 83111270 A TW83111270 A TW 83111270A TW 260831 B TW260831 B TW 260831B
Authority
TW
Taiwan
Prior art keywords
film
semiconducting
semiconductor
item
patent application
Prior art date
Application number
TW083111270A
Other languages
English (en)
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW260831B publication Critical patent/TW260831B/zh

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Classifications

    • H10P14/3806—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H10P14/2922—
    • H10P14/3411—
    • H10P14/3816—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/016—Catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
TW083111270A 1993-12-02 1994-12-05 TW260831B (esLanguage)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5339397A JP2860869B2 (ja) 1993-12-02 1993-12-02 半導体装置およびその作製方法

Publications (1)

Publication Number Publication Date
TW260831B true TW260831B (esLanguage) 1995-10-21

Family

ID=18327095

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083111270A TW260831B (esLanguage) 1993-12-02 1994-12-05

Country Status (7)

Country Link
US (1) US5585291A (esLanguage)
EP (2) EP0984317A3 (esLanguage)
JP (1) JP2860869B2 (esLanguage)
KR (1) KR100303110B1 (esLanguage)
CN (3) CN1052565C (esLanguage)
DE (1) DE69425632T2 (esLanguage)
TW (1) TW260831B (esLanguage)

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EP0984317A3 (en) 2001-03-21
EP0984317A2 (en) 2000-03-08
CN1052565C (zh) 2000-05-17
CN100521222C (zh) 2009-07-29
US5585291A (en) 1996-12-17
DE69425632T2 (de) 2000-12-28
EP0656644A1 (en) 1995-06-07
CN1109211A (zh) 1995-09-27
CN1196089C (zh) 2005-04-06
DE69425632D1 (de) 2000-09-28
CN1248757A (zh) 2000-03-29
EP0656644B1 (en) 2000-08-23
JPH07161635A (ja) 1995-06-23
KR100303110B1 (ko) 2001-12-15
CN1645621A (zh) 2005-07-27

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