JPS5559762A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5559762A
JPS5559762A JP13259178A JP13259178A JPS5559762A JP S5559762 A JPS5559762 A JP S5559762A JP 13259178 A JP13259178 A JP 13259178A JP 13259178 A JP13259178 A JP 13259178A JP S5559762 A JPS5559762 A JP S5559762A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor device
semiconductor
mesa
hydrogen peroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13259178A
Other languages
Japanese (ja)
Inventor
Koichiro Matsumura
Yoshitake Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13259178A priority Critical patent/JPS5559762A/en
Publication of JPS5559762A publication Critical patent/JPS5559762A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To provide a semiconductor device having superior leakage current characteristics and DC current amplification factor by mesa etching the semiconductor of mesa type, and then cleaning it with a solution containing hydrogen peroxide or nitric acid. CONSTITUTION:After an impurity is diffused in a semiconductor substrate to form a semiconductor region, a metallic layer is coated on the substrate and formed with a pattern thereat to thereby form one or more electrodes of desired shape thereon. The substrate thus formed is etched by an alkaline solution with the metallic layer as a mask, and the end of the junction surface thereof is exposed with mesa surface. Then, the exposed surface of the substrate is lightly oxidized with an oxidation liquid having a concentration of 5% of hydrogen peroxide or 0.1% of nitric acid (volumetric percentage) at 80 deg.C. Thus, it can provide a semiconductor device which has superior leakage current characteristic and DC current amplification factor to the conventional one.
JP13259178A 1978-10-30 1978-10-30 Method of fabricating semiconductor device Pending JPS5559762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13259178A JPS5559762A (en) 1978-10-30 1978-10-30 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13259178A JPS5559762A (en) 1978-10-30 1978-10-30 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS5559762A true JPS5559762A (en) 1980-05-06

Family

ID=15084914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13259178A Pending JPS5559762A (en) 1978-10-30 1978-10-30 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5559762A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585291A (en) * 1993-12-02 1996-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device containing a crystallization promoting material
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585291A (en) * 1993-12-02 1996-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device containing a crystallization promoting material
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device

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