JPS5464475A - Surface stabilizing method for mesa type semiconductor element - Google Patents

Surface stabilizing method for mesa type semiconductor element

Info

Publication number
JPS5464475A
JPS5464475A JP13112877A JP13112877A JPS5464475A JP S5464475 A JPS5464475 A JP S5464475A JP 13112877 A JP13112877 A JP 13112877A JP 13112877 A JP13112877 A JP 13112877A JP S5464475 A JPS5464475 A JP S5464475A
Authority
JP
Japan
Prior art keywords
film
electrode
substrate
etching
mesa etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13112877A
Other languages
Japanese (ja)
Inventor
Takashi Ishii
Kazuo Nishitani
Hiroshi Sawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13112877A priority Critical patent/JPS5464475A/en
Publication of JPS5464475A publication Critical patent/JPS5464475A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To reduce the parasitic capacitance, by performing mesa etching after forming metallic electrode on the semiconductor substrate and by stabilizing the substrate surface with the negative oxide film of semiconductor material used for the substrate.
CONSTITUTION: The electrode metallic film is coated on the GaAs substrate 1, and electrode 2 is formed by performing photo etching through the use of the resist film 7. Next, the substrate 1 is made for mesa etching by taking the film 7 and the electrode 2 as masks while leaving the film 7, and the etching surface 3 is made anodic oxidation. At this time, the anodic oxidation is made with the electrolytic method using hydrogen peroxide or made in the mixed solution of glychol and water, and the mesa etching surface 3 is coated with the GaAs native oxide film 8 and the film 7 is removed. Thus, no superimposing part is caused on the electrode 2 and the film 8, and accordingly, no parasitic capacitance is produced. Microwave element excellent in high frequency performance can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP13112877A 1977-10-31 1977-10-31 Surface stabilizing method for mesa type semiconductor element Pending JPS5464475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13112877A JPS5464475A (en) 1977-10-31 1977-10-31 Surface stabilizing method for mesa type semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13112877A JPS5464475A (en) 1977-10-31 1977-10-31 Surface stabilizing method for mesa type semiconductor element

Publications (1)

Publication Number Publication Date
JPS5464475A true JPS5464475A (en) 1979-05-24

Family

ID=15050630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13112877A Pending JPS5464475A (en) 1977-10-31 1977-10-31 Surface stabilizing method for mesa type semiconductor element

Country Status (1)

Country Link
JP (1) JPS5464475A (en)

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