GB9014723D0 - Crystallisation process - Google Patents
Crystallisation processInfo
- Publication number
- GB9014723D0 GB9014723D0 GB909014723A GB9014723A GB9014723D0 GB 9014723 D0 GB9014723 D0 GB 9014723D0 GB 909014723 A GB909014723 A GB 909014723A GB 9014723 A GB9014723 A GB 9014723A GB 9014723 D0 GB9014723 D0 GB 9014723D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystallisation process
- crystallisation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB909014723A GB9014723D0 (en) | 1990-07-03 | 1990-07-03 | Crystallisation process |
PCT/GB1991/001086 WO1992001089A1 (en) | 1990-07-03 | 1991-07-03 | Crystallisation process |
GB9114398A GB2245552A (en) | 1990-07-03 | 1991-07-03 | Crystallising amorphous silicon |
EP91912797A EP0489900A1 (en) | 1990-07-03 | 1991-07-03 | Crystallisation process |
JP3512016A JPH05501701A (en) | 1990-07-03 | 1991-07-03 | Crystallization method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB909014723A GB9014723D0 (en) | 1990-07-03 | 1990-07-03 | Crystallisation process |
Publications (1)
Publication Number | Publication Date |
---|---|
GB9014723D0 true GB9014723D0 (en) | 1990-08-22 |
Family
ID=10678581
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB909014723A Pending GB9014723D0 (en) | 1990-07-03 | 1990-07-03 | Crystallisation process |
GB9114398A Withdrawn GB2245552A (en) | 1990-07-03 | 1991-07-03 | Crystallising amorphous silicon |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9114398A Withdrawn GB2245552A (en) | 1990-07-03 | 1991-07-03 | Crystallising amorphous silicon |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0489900A1 (en) |
JP (1) | JPH05501701A (en) |
GB (2) | GB9014723D0 (en) |
WO (1) | WO1992001089A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3497198B2 (en) * | 1993-02-03 | 2004-02-16 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device and thin film transistor |
US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
DE69428387T2 (en) * | 1993-02-15 | 2002-07-04 | Semiconductor Energy Lab | Manufacturing process for a crystallized semiconductor layer |
US6730549B1 (en) | 1993-06-25 | 2004-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for its preparation |
TW264575B (en) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
JP2860869B2 (en) * | 1993-12-02 | 1999-02-24 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63503345A (en) * | 1985-12-19 | 1988-12-02 | アライド・コ−ポレ−ション | Method of forming single crystal silicon using SPE seeds and laser crystallization |
AU616739B2 (en) * | 1988-03-11 | 1991-11-07 | Unisearch Limited | Improved solution growth of silicon films |
EP0334110B1 (en) * | 1988-03-24 | 1993-09-15 | Siemens Aktiengesellschaft | Process for producing polycristalline layers with large crystals for thin film semiconductor devices, like solar cells |
-
1990
- 1990-07-03 GB GB909014723A patent/GB9014723D0/en active Pending
-
1991
- 1991-07-03 JP JP3512016A patent/JPH05501701A/en active Pending
- 1991-07-03 EP EP91912797A patent/EP0489900A1/en not_active Withdrawn
- 1991-07-03 WO PCT/GB1991/001086 patent/WO1992001089A1/en not_active Application Discontinuation
- 1991-07-03 GB GB9114398A patent/GB2245552A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH05501701A (en) | 1993-04-02 |
EP0489900A1 (en) | 1992-06-17 |
WO1992001089A1 (en) | 1992-01-23 |
GB2245552A (en) | 1992-01-08 |
GB9114398D0 (en) | 1991-08-21 |
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