TW243541B - - Google Patents

Info

Publication number
TW243541B
TW243541B TW081105350A TW81105350A TW243541B TW 243541 B TW243541 B TW 243541B TW 081105350 A TW081105350 A TW 081105350A TW 81105350 A TW81105350 A TW 81105350A TW 243541 B TW243541 B TW 243541B
Authority
TW
Taiwan
Application number
TW081105350A
Other languages
Chinese (zh)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910015250A external-priority patent/KR940009611B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW243541B publication Critical patent/TW243541B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H10P76/4085—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW081105350A 1991-08-31 1992-07-06 TW243541B (OSRAM)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019910015250A KR940009611B1 (ko) 1991-08-31 1991-08-31 산화막식각마스크를 이용하여 패터닝된 고집적 반도체장치의 커패시터 제조방법(poem 셀)
KR910021974 1991-11-30
KR920003339 1992-02-29

Publications (1)

Publication Number Publication Date
TW243541B true TW243541B (OSRAM) 1995-03-21

Family

ID=27348767

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081105350A TW243541B (OSRAM) 1991-08-31 1992-07-06

Country Status (7)

Country Link
US (1) US5330614A (OSRAM)
JP (1) JP2677490B2 (OSRAM)
DE (1) DE4224946A1 (OSRAM)
FR (1) FR2680913B1 (OSRAM)
GB (1) GB2259187B (OSRAM)
IT (1) IT1259016B (OSRAM)
TW (1) TW243541B (OSRAM)

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KR100244306B1 (ko) * 1997-07-29 2000-02-01 김영환 반도체 소자의 커패시터의 제조 방법
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US6136661A (en) * 1999-06-14 2000-10-24 Vanguard International Semiconductor Corporation Method to fabricate capacitor structures with very narrow features using silyated photoresist
KR100450671B1 (ko) * 2002-02-26 2004-10-01 삼성전자주식회사 스토리지 노드 콘택플러그를 갖는 반도체 소자의 제조방법
KR100546395B1 (ko) * 2003-11-17 2006-01-26 삼성전자주식회사 반도체소자의 커패시터 및 그 제조방법
DE102004021401B4 (de) * 2004-04-30 2011-02-03 Qimonda Ag Herstellungsverfahren für ein Stapelkondensatorfeld
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Also Published As

Publication number Publication date
DE4224946A1 (de) 1993-03-04
FR2680913A1 (fr) 1993-03-05
ITMI921873A0 (it) 1992-07-30
US5330614A (en) 1994-07-19
JP2677490B2 (ja) 1997-11-17
GB2259187B (en) 1996-06-19
GB2259187A (en) 1993-03-03
IT1259016B (it) 1996-03-11
GB9218177D0 (en) 1992-10-14
FR2680913B1 (fr) 1998-04-03
JPH05218333A (ja) 1993-08-27
ITMI921873A1 (it) 1994-01-30

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees