TW200838000A - Group-III nitride compound semiconductor device and production method thereof, group-III nitride compound semiconductor light-emitting device and production method thereof, and lamp - Google Patents

Group-III nitride compound semiconductor device and production method thereof, group-III nitride compound semiconductor light-emitting device and production method thereof, and lamp Download PDF

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Publication number
TW200838000A
TW200838000A TW097101381A TW97101381A TW200838000A TW 200838000 A TW200838000 A TW 200838000A TW 097101381 A TW097101381 A TW 097101381A TW 97101381 A TW97101381 A TW 97101381A TW 200838000 A TW200838000 A TW 200838000A
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Taiwan
Prior art keywords
layer
nitride compound
compound semiconductor
iii nitride
light
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TW097101381A
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English (en)
Chinese (zh)
Inventor
Hiroaki Kaji
Yasunori Yokoyama
Hiromitsu Sakai
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Showa Denko Kk
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Publication of TW200838000A publication Critical patent/TW200838000A/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
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    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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    • H10H20/01—Manufacture or treatment
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
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    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
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    • H01S5/0213—Sapphire, quartz or diamond based substrates
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW097101381A 2007-01-16 2008-01-14 Group-III nitride compound semiconductor device and production method thereof, group-III nitride compound semiconductor light-emitting device and production method thereof, and lamp TW200838000A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007006790 2007-01-16
JP2007184456 2007-07-13
JP2007274458 2007-10-22
JP2007286691A JP2009123718A (ja) 2007-01-16 2007-11-02 Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ

Publications (1)

Publication Number Publication Date
TW200838000A true TW200838000A (en) 2008-09-16

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TW097101381A TW200838000A (en) 2007-01-16 2008-01-14 Group-III nitride compound semiconductor device and production method thereof, group-III nitride compound semiconductor light-emitting device and production method thereof, and lamp

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US (1) US20090194784A1 (enExample)
EP (1) EP2105973A4 (enExample)
JP (1) JP2009123718A (enExample)
KR (1) KR101151167B1 (enExample)
TW (1) TW200838000A (enExample)
WO (1) WO2008087930A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447958B (zh) * 2009-07-10 2014-08-01 Toyoda Gosei Kk 半導體發光元件之製造方法及燈、電子機器、及機械裝置
US8859313B2 (en) 2010-03-05 2014-10-14 Toyoda Gosei Co., Ltd. Method for manufacturing semiconductor light emitting element, semiconductor light emitting element, lamp, electronic device and mechanical apparatus

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JP5272390B2 (ja) * 2007-11-29 2013-08-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP5262206B2 (ja) 2008-03-12 2013-08-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体層の製造方法及びｉｉｉ族窒化物半導体発光素子の製造方法
CN102017192B (zh) * 2008-03-26 2013-01-23 晶能光电（江西）有限公司 在发光器件内制造高反射欧姆接触的方法
JP5465469B2 (ja) * 2008-09-04 2014-04-09 日本碍子株式会社 エピタキシャル基板、半導体デバイス基板、およびｈｅｍｔ素子
JP5196160B2 (ja) * 2008-10-17 2013-05-15 日亜化学工業株式会社 半導体発光素子
JP5504618B2 (ja) * 2008-12-03 2014-05-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
US8421056B2 (en) * 2009-03-03 2013-04-16 Hitachi Cable, Ltd. Light-emitting device epitaxial wafer and light-emitting device
JP2010263189A (ja) * 2009-04-07 2010-11-18 Sharp Corp 窒化物半導体発光ダイオード
JP2011018869A (ja) * 2009-06-09 2011-01-27 Nichia Corp 窒化物半導体素子
JP5220687B2 (ja) 2009-06-15 2013-06-26 昭和電工株式会社 植物栽培用の照明装置および植物栽培システム
JP5246081B2 (ja) * 2009-07-14 2013-07-24 豊田合成株式会社 半導体発光素子の製造方法
JP5246079B2 (ja) * 2009-07-10 2013-07-24 豊田合成株式会社 半導体素子の製造方法
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