WO2008087930A1 - Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ - Google Patents

Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ Download PDF

Info

Publication number
WO2008087930A1
WO2008087930A1 PCT/JP2008/050336 JP2008050336W WO2008087930A1 WO 2008087930 A1 WO2008087930 A1 WO 2008087930A1 JP 2008050336 W JP2008050336 W JP 2008050336W WO 2008087930 A1 WO2008087930 A1 WO 2008087930A1
Authority
WO
WIPO (PCT)
Prior art keywords
compound semiconductor
iii nitride
manufacturing
nitride compound
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/050336
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Hiroaki Kaji
Yasunori Yokoyama
Hiromitsu Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to EP08703200.9A priority Critical patent/EP2105973A4/en
Priority to US12/306,609 priority patent/US20090194784A1/en
Publication of WO2008087930A1 publication Critical patent/WO2008087930A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
PCT/JP2008/050336 2007-01-16 2008-01-15 Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ Ceased WO2008087930A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08703200.9A EP2105973A4 (en) 2007-01-16 2008-01-15 III-NITRIDE-COMPOSITE SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF, LIGHT-EMITTING III-NITRIDE-COMPOSITE SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF AND LAMP
US12/306,609 US20090194784A1 (en) 2007-01-16 2008-01-15 Group-iii nitride compound semiconductor device and production method thereof, group-iii nitride compound semiconductor light-emitting device and production method thereof, and lamp

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007-006790 2007-01-16
JP2007006790 2007-01-16
JP2007-184456 2007-07-13
JP2007184456 2007-07-13
JP2007274458 2007-10-22
JP2007-274458 2007-10-22
JP2007286691A JP2009123718A (ja) 2007-01-16 2007-11-02 Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
JP2007-286691 2007-11-02

Publications (1)

Publication Number Publication Date
WO2008087930A1 true WO2008087930A1 (ja) 2008-07-24

Family

ID=39635934

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050336 Ceased WO2008087930A1 (ja) 2007-01-16 2008-01-15 Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ

Country Status (6)

Country Link
US (1) US20090194784A1 (enExample)
EP (1) EP2105973A4 (enExample)
JP (1) JP2009123718A (enExample)
KR (1) KR101151167B1 (enExample)
TW (1) TW200838000A (enExample)
WO (1) WO2008087930A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135490A (ja) * 2008-12-03 2010-06-17 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法
CN101826584A (zh) * 2009-03-03 2010-09-08 日立电线株式会社 发光器件外延片和发光器件
JP2010263189A (ja) * 2009-04-07 2010-11-18 Sharp Corp 窒化物半導体発光ダイオード
WO2017215150A1 (zh) * 2016-06-12 2017-12-21 北京北方华创微电子装备有限公司 半导体设备的成膜方法以及半导体设备的氮化铝成膜方法
US10643843B2 (en) 2016-06-12 2020-05-05 Beijing Naura Microelectronics Equipment Co., Ltd. Film forming method and aluminum nitride film forming method for semiconductor apparatus
WO2020230669A1 (ja) * 2019-05-15 2020-11-19 スタンレー電気株式会社 半導体多層膜反射鏡を用いた垂直共振器型発光素子及びその製造方法

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5272390B2 (ja) * 2007-11-29 2013-08-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP5262206B2 (ja) 2008-03-12 2013-08-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体層の製造方法及びｉｉｉ族窒化物半導体発光素子の製造方法
WO2009117850A1 (en) * 2008-03-26 2009-10-01 Lattice Power (Jiangxi) Corporation Method for fabricating highly reflective ohmic contact in light-emitting devices
JP5465469B2 (ja) * 2008-09-04 2014-04-09 日本碍子株式会社 エピタキシャル基板、半導体デバイス基板、およびｈｅｍｔ素子
JP5196160B2 (ja) * 2008-10-17 2013-05-15 日亜化学工業株式会社 半導体発光素子
JP2011018869A (ja) * 2009-06-09 2011-01-27 Nichia Corp 窒化物半導体素子
JP5220687B2 (ja) 2009-06-15 2013-06-26 昭和電工株式会社 植物栽培用の照明装置および植物栽培システム
JP5246079B2 (ja) * 2009-07-10 2013-07-24 豊田合成株式会社 半導体素子の製造方法
CN102484177B (zh) * 2009-07-10 2015-05-06 丰田合成株式会社 半导体发光元件的制造方法、灯、电子设备和机械装置
JP5246081B2 (ja) * 2009-07-14 2013-07-24 豊田合成株式会社 半導体発光素子の製造方法
JP2011029218A (ja) * 2009-07-21 2011-02-10 Sharp Corp 窒化物半導体発光素子構造とその形成方法
JP2011060900A (ja) * 2009-09-08 2011-03-24 Showa Denko Kk 半導体発光素子の製造方法およびランプ、電子機器、機械装置
JP5636693B2 (ja) * 2010-03-01 2014-12-10 豊田合成株式会社 半導体素子の製造方法
JP5310604B2 (ja) * 2010-03-05 2013-10-09 豊田合成株式会社 半導体発光素子の製造方法および半導体発光素子、ランプ、電子機器、機械装置
JP5353802B2 (ja) * 2010-04-12 2013-11-27 豊田合成株式会社 半導体発光素子の製造方法およびランプ、電子機器、機械装置
JP5353821B2 (ja) * 2010-05-31 2013-11-27 豊田合成株式会社 半導体発光素子と、その製造方法およびランプ、電子機器、機械装置
JP5353827B2 (ja) * 2010-06-14 2013-11-27 豊田合成株式会社 半導体発光素子の製造方法および半導体発光素子、ランプ、電子機器、機械装置
JP5934575B2 (ja) * 2012-05-16 2016-06-15 サンケン電気株式会社 窒化物半導体装置の製造方法
KR20140010587A (ko) * 2012-07-13 2014-01-27 삼성전자주식회사 도핑된 버퍼층을 포함하는 반도체 발광 소자 및 그 제조 방법
CN103296157B (zh) * 2013-05-31 2015-08-26 华南理工大学 生长在铝酸锶钽镧衬底上的led外延片及制备方法
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
CN106537617B (zh) 2014-05-27 2019-04-16 斯兰纳Uv科技有限公司 使用半导体结构和超晶格的高级电子装置结构
JP6986349B2 (ja) 2014-05-27 2021-12-22 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd ｎ型超格子及びｐ型超格子を備える電子デバイス
JP6817072B2 (ja) 2014-05-27 2021-01-20 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 光電子デバイス
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
US9876143B2 (en) * 2014-10-01 2018-01-23 Rayvio Corporation Ultraviolet light emitting device doped with boron
US20160359004A1 (en) * 2015-06-03 2016-12-08 Veeco Instruments, Inc. Stress control for heteroepitaxy
DE102015114478A1 (de) * 2015-08-31 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
JP6688109B2 (ja) * 2016-02-25 2020-04-28 日本碍子株式会社 面発光素子、外部共振器型垂直面発光レーザー、および面発光素子の製造方法
US10541514B2 (en) 2016-02-25 2020-01-21 Ngk Insulators, Ltd. Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device
JP2017220586A (ja) * 2016-06-08 2017-12-14 国立大学法人 東京大学 半導体発光素子
US10121932B1 (en) * 2016-11-30 2018-11-06 The United States Of America As Represented By The Secretary Of The Navy Tunable graphene light-emitting device
GB202014592D0 (en) * 2020-09-16 2020-10-28 Spts Technologies Ltd Deposition method

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0326087B2 (enExample) 1986-09-06 1991-04-09 Kurita Machinery Manuf
JPH04297023A (ja) 1991-01-31 1992-10-21 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JP2001094150A (ja) * 1999-09-21 2001-04-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2002217498A (ja) * 2001-01-15 2002-08-02 Sharp Corp 窒化物半導体レーザ素子とこれを含む光学装置
JP2002261324A (ja) * 2000-12-28 2002-09-13 Ngk Insulators Ltd 半導体発光素子
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
JP2002343728A (ja) * 2001-05-21 2002-11-29 Nec Corp 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
JP2004035275A (ja) * 2002-06-28 2004-02-05 Hitachi Cable Ltd 多孔質基板とその製造方法、ＧａＮ系半導体積層基板とその製造方法
JP2005039248A (ja) * 2003-07-02 2005-02-10 Matsushita Electric Ind Co Ltd Ｉｉｉ族窒化物結晶の製造方法、半導体基板の製造方法、ｉｉｉ族窒化物結晶、半導体基板および電子デバイス
JP2005119921A (ja) * 2003-10-17 2005-05-12 Hitachi Cable Ltd Ｉｉｉ族窒化物半導体基板およびその製造方法
JP2005531154A (ja) * 2002-06-26 2005-10-13 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物半導体レーザ素子及びその性能を向上させる方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778609B2 (ja) * 1996-04-26 2006-05-24 三洋電機株式会社 半導体素子の製造方法
JP3644191B2 (ja) * 1996-06-25 2005-04-27 住友電気工業株式会社 半導体素子
JP3897448B2 (ja) * 1998-04-27 2007-03-22 日亜化学工業株式会社 窒化物半導体発光素子
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US6531719B2 (en) * 1999-09-29 2003-03-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
WO2002056435A1 (fr) * 2001-01-15 2002-07-18 Sharp Kabushiki Kaisha Element laser a semi-conducteur au nitrure et dispositif optique contenant cet element
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
JP3656606B2 (ja) 2002-02-15 2005-06-08 昭和電工株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
US7255742B2 (en) * 2003-07-02 2007-08-14 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device
US20050082562A1 (en) * 2003-10-15 2005-04-21 Epistar Corporation High efficiency nitride based light emitting device
US7242705B2 (en) * 2003-12-17 2007-07-10 Palo Alto Research Center, Incorporated Grating-outcoupled cavity resonator having uni-directional emission
US7339255B2 (en) * 2004-08-24 2008-03-04 Kabushiki Kaisha Toshiba Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
JP4833616B2 (ja) * 2004-09-13 2011-12-07 昭和電工株式会社 Ｉｉｉ族窒化物半導体の製造方法
US7087922B2 (en) * 2004-11-16 2006-08-08 Formosa Epitaxy Incorporation Light-emitting diode structure
JP4563230B2 (ja) * 2005-03-28 2010-10-13 昭和電工株式会社 ＡｌＧａＮ基板の製造方法
WO2007129773A1 (ja) * 2006-05-10 2007-11-15 Showa Denko K.K. Iii族窒化物化合物半導体積層構造体
EP2056339B1 (en) * 2006-08-18 2020-04-15 Toyoda Gosei Co., Ltd. Method for manufacturing group iii nitride compound semiconductor light-emitting device

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0326087B2 (enExample) 1986-09-06 1991-04-09 Kurita Machinery Manuf
JPH04297023A (ja) 1991-01-31 1992-10-21 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JP2001094150A (ja) * 1999-09-21 2001-04-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2002261324A (ja) * 2000-12-28 2002-09-13 Ngk Insulators Ltd 半導体発光素子
JP2002217498A (ja) * 2001-01-15 2002-08-02 Sharp Corp 窒化物半導体レーザ素子とこれを含む光学装置
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
JP2002343728A (ja) * 2001-05-21 2002-11-29 Nec Corp 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
JP2005531154A (ja) * 2002-06-26 2005-10-13 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物半導体レーザ素子及びその性能を向上させる方法
JP2004035275A (ja) * 2002-06-28 2004-02-05 Hitachi Cable Ltd 多孔質基板とその製造方法、ＧａＮ系半導体積層基板とその製造方法
JP2005039248A (ja) * 2003-07-02 2005-02-10 Matsushita Electric Ind Co Ltd Ｉｉｉ族窒化物結晶の製造方法、半導体基板の製造方法、ｉｉｉ族窒化物結晶、半導体基板および電子デバイス
JP2005119921A (ja) * 2003-10-17 2005-05-12 Hitachi Cable Ltd Ｉｉｉ族窒化物半導体基板およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2105973A4

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135490A (ja) * 2008-12-03 2010-06-17 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法
US8642992B2 (en) 2008-12-03 2014-02-04 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light emitting device
CN101826584A (zh) * 2009-03-03 2010-09-08 日立电线株式会社 发光器件外延片和发光器件
JP2010263189A (ja) * 2009-04-07 2010-11-18 Sharp Corp 窒化物半導体発光ダイオード
US8659041B2 (en) 2009-04-07 2014-02-25 Sharp Kabushiki Kaisha Nitride semiconductor light emitting diode
WO2017215150A1 (zh) * 2016-06-12 2017-12-21 北京北方华创微电子装备有限公司 半导体设备的成膜方法以及半导体设备的氮化铝成膜方法
KR20180116130A (ko) * 2016-06-12 2018-10-24 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 반도체 장비의 박막 형성 방법 및 반도체 장비의 질화 알루미늄 박막 형성 방법
KR102003151B1 (ko) 2016-06-12 2019-07-23 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 반도체 장비의 박막 형성 방법 및 반도체 장비의 질화 알루미늄 박막 형성 방법
US10643843B2 (en) 2016-06-12 2020-05-05 Beijing Naura Microelectronics Equipment Co., Ltd. Film forming method and aluminum nitride film forming method for semiconductor apparatus
WO2020230669A1 (ja) * 2019-05-15 2020-11-19 スタンレー電気株式会社 半導体多層膜反射鏡を用いた垂直共振器型発光素子及びその製造方法

Also Published As

Publication number Publication date
KR101151167B1 (ko) 2012-06-04
TW200838000A (en) 2008-09-16
EP2105973A4 (en) 2015-08-05
EP2105973A1 (en) 2009-09-30
US20090194784A1 (en) 2009-08-06
JP2009123718A (ja) 2009-06-04
KR20090094138A (ko) 2009-09-03

Similar Documents

Publication Publication Date Title
WO2008087930A1 (ja) Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
WO2006076152A3 (en) Light emitting diode with conducting metal substrate
WO2009005311A3 (en) Light emitting device and method of fabricating the same
WO2009005126A1 (ja) Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
TW200610192A (en) Group III nitride semiconductor crystal and manufacturing method of the same, group III nitride semiconductor device and manufacturing method of the same, and light emitting device
JP2019201206A5 (enExample)
WO2006076208A3 (en) Systems and methods for removing operating heat from a light emitting diode
WO2009069550A1 (ja) Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
WO2005071770A3 (en) Green light-emitting microcavity oled
WO2004093131A3 (en) Light emitting devices
WO2004093134A3 (en) Light emitting systems
WO2008106040A3 (en) Led device having improved light output
WO2009088198A3 (ko) 발광 다이오드 코팅 방법
WO2009014376A3 (en) Light emitting device package and method of manufacturing the same
WO2006086387A3 (en) Semiconductor light-emitting device
WO2006036565A3 (en) High efficiency group iii nitride led with lenticular surface
WO2008123270A1 (ja) 半導体装置、半導体装置の製造方法及び表示装置
EP2157623A4 (en) SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
WO2009142462A3 (ko) 유기 발광 소자 및 이의 제조방법
WO2009093845A3 (ko) 발광소자
WO2009005894A3 (en) Non-polar ultraviolet light emitting device and method for fabricating same
TW200735419A (en) Nitride semiconductor light-emitting element
WO2007025122A3 (en) Semiconductor micro-cavity light emitting diode
WO2011099771A3 (en) Light emitting diode chip having distributed bragg reflector and method of fabricating the same
WO2009084857A3 (en) Light emitting diode and method of fabricating the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880002247.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08703200

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12306609

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2008703200

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020097014525

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE